CN103906370A - 芯片封装结构、具有内埋元件的电路板及其制作方法 - Google Patents
芯片封装结构、具有内埋元件的电路板及其制作方法 Download PDFInfo
- Publication number
- CN103906370A CN103906370A CN201210577545.XA CN201210577545A CN103906370A CN 103906370 A CN103906370 A CN 103906370A CN 201210577545 A CN201210577545 A CN 201210577545A CN 103906370 A CN103906370 A CN 103906370A
- Authority
- CN
- China
- Prior art keywords
- layer
- conducting wire
- electronic component
- wire layer
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000003466 welding Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 25
- 210000005069 ears Anatomy 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- -1 PI) Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000005026 oriented polypropylene Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
第一介电层 | 11 |
电子元件 | 12 |
承载板 | 14 |
离型层 | 13 |
导电连接端子 | 121 |
第一表面 | 112 |
第二表面 | 114 |
嵌合结构 | 10 |
通孔 | 115 |
第一导电线路层 | 15 |
第二导电线路层 | 16 |
导电通孔 | 17 |
端子连接线路 | 151 |
第二介电层 | 18 |
第三导电线路层 | 19 |
第三介电层 | 20 |
第四导电线路层 | 21 |
导电孔 | 22 |
第一防焊层 | 23 |
第二防焊层 | 24 |
第一电性连接垫 | 25 |
第二电性连接垫 | 26 |
具有内埋元件的电路板 | 30 |
第一表面处理层 | 27 |
第二表面处理层 | 28 |
焊料凸块 | 29 |
芯片 | 40 |
芯片封装结构 | 50 |
焊球 | 34 |
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210577545.XA CN103906370B (zh) | 2012-12-27 | 2012-12-27 | 芯片封装结构、具有内埋元件的电路板及其制作方法 |
TW102101268A TWI466611B (zh) | 2012-12-27 | 2013-01-14 | 晶片封裝結構、具有內埋元件的電路板及其製作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210577545.XA CN103906370B (zh) | 2012-12-27 | 2012-12-27 | 芯片封装结构、具有内埋元件的电路板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103906370A true CN103906370A (zh) | 2014-07-02 |
CN103906370B CN103906370B (zh) | 2017-01-11 |
Family
ID=50997449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210577545.XA Active CN103906370B (zh) | 2012-12-27 | 2012-12-27 | 芯片封装结构、具有内埋元件的电路板及其制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103906370B (zh) |
TW (1) | TWI466611B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448856A (zh) * | 2014-09-01 | 2016-03-30 | 宏启胜精密电子(秦皇岛)有限公司 | 芯片封装结构、制作方法及芯片封装基板 |
CN105514053A (zh) * | 2014-09-05 | 2016-04-20 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
CN111354687A (zh) * | 2018-12-21 | 2020-06-30 | 深南电路股份有限公司 | 一种封装结构及封装结构的制备方法 |
WO2023272642A1 (zh) * | 2021-06-30 | 2023-01-05 | 深南电路股份有限公司 | 电子元件封装体、电子组件、电压调节模块以及稳压器件 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI571185B (zh) * | 2014-10-15 | 2017-02-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
TWI762777B (zh) * | 2019-03-27 | 2022-05-01 | 恆勁科技股份有限公司 | 半導體封裝基板及其製法與電子封裝件及其製法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1518080A (zh) * | 2003-01-23 | 2004-08-04 | 新光电气工业株式会社 | 电子元件封装结构及其制造方法 |
CN101594740A (zh) * | 2008-05-27 | 2009-12-02 | 华通电脑股份有限公司 | 嵌埋电子器件的电路板及其方法 |
US20100187003A1 (en) * | 2009-01-23 | 2010-07-29 | Unimicron Technology Corporation | Circuit board structure and fabrication method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI263313B (en) * | 2005-08-15 | 2006-10-01 | Phoenix Prec Technology Corp | Stack structure of semiconductor component embedded in supporting board |
TWI365689B (en) * | 2007-12-19 | 2012-06-01 | Unimicron Technology Corp | Embedded circuit board and manufacturing method thereof |
-
2012
- 2012-12-27 CN CN201210577545.XA patent/CN103906370B/zh active Active
-
2013
- 2013-01-14 TW TW102101268A patent/TWI466611B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1518080A (zh) * | 2003-01-23 | 2004-08-04 | 新光电气工业株式会社 | 电子元件封装结构及其制造方法 |
CN101594740A (zh) * | 2008-05-27 | 2009-12-02 | 华通电脑股份有限公司 | 嵌埋电子器件的电路板及其方法 |
US20100187003A1 (en) * | 2009-01-23 | 2010-07-29 | Unimicron Technology Corporation | Circuit board structure and fabrication method thereof |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448856A (zh) * | 2014-09-01 | 2016-03-30 | 宏启胜精密电子(秦皇岛)有限公司 | 芯片封装结构、制作方法及芯片封装基板 |
CN105448856B (zh) * | 2014-09-01 | 2018-04-06 | 碁鼎科技秦皇岛有限公司 | 芯片封装结构、制作方法及芯片封装基板 |
CN105514053A (zh) * | 2014-09-05 | 2016-04-20 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
CN111354687A (zh) * | 2018-12-21 | 2020-06-30 | 深南电路股份有限公司 | 一种封装结构及封装结构的制备方法 |
CN111354687B (zh) * | 2018-12-21 | 2023-12-15 | 深南电路股份有限公司 | 一种封装结构及封装结构的制备方法 |
WO2023272642A1 (zh) * | 2021-06-30 | 2023-01-05 | 深南电路股份有限公司 | 电子元件封装体、电子组件、电压调节模块以及稳压器件 |
US11737212B2 (en) | 2021-06-30 | 2023-08-22 | Shennan Circuits Co., Ltd. | Electronic component package, electronic assembly, voltage regulation module, and voltage regulator member |
Also Published As
Publication number | Publication date |
---|---|
CN103906370B (zh) | 2017-01-11 |
TW201427523A (zh) | 2014-07-01 |
TWI466611B (zh) | 2014-12-21 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20161219 Address after: No. 18, Tengfei Road, Qinhuangdao Economic & Technological Development Zone, Hebei, China Applicant after: Qi Ding Technology Qinhuangdao Co.,Ltd. Applicant after: Zhen Ding Technology Co.,Ltd. Address before: 066000 Qinhuangdao economic and Technological Development Zone, Hebei Tengfei Road, No. 18 Applicant before: HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) Co.,Ltd. Applicant before: Zhen Ding Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220725 Address after: 066004 No. 18-2, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee after: Liding semiconductor technology Qinhuangdao Co.,Ltd. Patentee after: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee after: Zhen Ding Technology Co.,Ltd. Address before: No.18, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province 066004 Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240205 Address after: 18-2 Tengfei Road, Economic and Technological Development Zone, Qinhuangdao City, Hebei Province Patentee after: Liding semiconductor technology Qinhuangdao Co.,Ltd. Country or region after: China Patentee after: Zhen Ding Technology Co.,Ltd. Country or region after: Taiwan, China Address before: 066004 No. 18-2, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee before: Liding semiconductor technology Qinhuangdao Co.,Ltd. Country or region before: China Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. Country or region before: Taiwan, China |