CN103824883B - 一种具有终端耐压结构的沟槽mosfet的及其制造方法 - Google Patents
一种具有终端耐压结构的沟槽mosfet的及其制造方法 Download PDFInfo
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- CN103824883B CN103824883B CN201210467865.XA CN201210467865A CN103824883B CN 103824883 B CN103824883 B CN 103824883B CN 201210467865 A CN201210467865 A CN 201210467865A CN 103824883 B CN103824883 B CN 103824883B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201210467865.XA CN103824883B (zh) | 2012-11-19 | 2012-11-19 | 一种具有终端耐压结构的沟槽mosfet的及其制造方法 |
PCT/CN2013/087270 WO2014075632A1 (en) | 2012-11-19 | 2013-11-15 | Trench mosfet and method for forming the same |
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CN201210467865.XA CN103824883B (zh) | 2012-11-19 | 2012-11-19 | 一种具有终端耐压结构的沟槽mosfet的及其制造方法 |
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CN103824883A CN103824883A (zh) | 2014-05-28 |
CN103824883B true CN103824883B (zh) | 2017-05-03 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104752523A (zh) * | 2015-03-31 | 2015-07-01 | 无锡新洁能股份有限公司 | 利用电荷耦合实现耐压的肖特基二极管及其制备方法 |
JP6406274B2 (ja) * | 2016-02-05 | 2018-10-17 | 株式会社デンソー | 半導体装置 |
CN105655402B (zh) * | 2016-03-31 | 2019-11-19 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet终端结构及其制造方法 |
CN110164957B (zh) * | 2017-04-18 | 2022-04-26 | 中国电子科技集团公司第二十四研究所 | 高压半导体介质耐压终端 |
CN110518032B (zh) * | 2019-09-02 | 2022-12-23 | 电子科技大学 | 多晶硅soi基板型光电耦合器、其集成电路及制备方法 |
CN111725300A (zh) * | 2020-07-16 | 2020-09-29 | 深圳市瑞之辰科技有限公司 | Mosfet器件的终端结构及其制备方法和应用 |
CN117059669B (zh) * | 2023-10-09 | 2024-02-06 | 华羿微电子股份有限公司 | 一种屏蔽栅型mosfet终端结构及制作方法 |
CN117371395B (zh) * | 2023-12-06 | 2024-02-02 | 杭州广立微电子股份有限公司 | 用于评估版图中目标栅极与图形集群相对位置关系的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211981A (zh) * | 2007-12-22 | 2008-07-02 | 苏州硅能半导体科技股份有限公司 | 一种深沟槽大功率mos器件及其制造方法 |
CN101752375A (zh) * | 2009-12-29 | 2010-06-23 | 无锡新洁能功率半导体有限公司 | 一种具有改进型终端保护结构的沟槽型功率mos器件 |
CN102637731A (zh) * | 2012-04-26 | 2012-08-15 | 哈尔滨工程大学 | 一种沟槽功率mos器件的终端结构及其制造方法 |
CN202473932U (zh) * | 2011-11-25 | 2012-10-03 | 无锡新洁能功率半导体有限公司 | 功率mosfet器件 |
CN203288598U (zh) * | 2012-11-19 | 2013-11-13 | 宁波比亚迪半导体有限公司 | 一种具有终端耐压结构的沟槽mosfet |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8174067B2 (en) * | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
CN102484131B (zh) * | 2009-08-28 | 2015-06-17 | 三垦电气株式会社 | 半导体装置 |
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- 2012-11-19 CN CN201210467865.XA patent/CN103824883B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211981A (zh) * | 2007-12-22 | 2008-07-02 | 苏州硅能半导体科技股份有限公司 | 一种深沟槽大功率mos器件及其制造方法 |
CN101752375A (zh) * | 2009-12-29 | 2010-06-23 | 无锡新洁能功率半导体有限公司 | 一种具有改进型终端保护结构的沟槽型功率mos器件 |
CN202473932U (zh) * | 2011-11-25 | 2012-10-03 | 无锡新洁能功率半导体有限公司 | 功率mosfet器件 |
CN102637731A (zh) * | 2012-04-26 | 2012-08-15 | 哈尔滨工程大学 | 一种沟槽功率mos器件的终端结构及其制造方法 |
CN203288598U (zh) * | 2012-11-19 | 2013-11-13 | 宁波比亚迪半导体有限公司 | 一种具有终端耐压结构的沟槽mosfet |
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Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |