CN103820862A - Method for preparing high-temperature annealing silicon wafer - Google Patents
Method for preparing high-temperature annealing silicon wafer Download PDFInfo
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- CN103820862A CN103820862A CN201210465601.0A CN201210465601A CN103820862A CN 103820862 A CN103820862 A CN 103820862A CN 201210465601 A CN201210465601 A CN 201210465601A CN 103820862 A CN103820862 A CN 103820862A
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CN201210465601.0A CN103820862A (en) | 2012-11-16 | 2012-11-16 | Method for preparing high-temperature annealing silicon wafer |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104651946A (en) * | 2015-03-19 | 2015-05-27 | 太原理工大学 | Silicon waveguide surface smoothing process based on silicon hydrogen bond current density method |
CN105470129A (en) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | Method for eliminating impact on minority carrier diffusion length from thermal donor |
CN106257625A (en) * | 2016-08-19 | 2016-12-28 | 横店集团东磁股份有限公司 | A kind of stack high-temperature annealing process |
CN106688080A (en) * | 2014-09-08 | 2017-05-17 | 三菱电机株式会社 | Semiconductor annealing apparatus |
CN106920746A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving silicon chip surface microdefect |
CN106920745A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | It is a kind of to eliminate the light method for mixing annealing silicon wafer surface COP |
CN109137068A (en) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | A kind of method for annealing of monocrystalline silicon piece |
CN109166799A (en) * | 2018-09-05 | 2019-01-08 | 德淮半导体有限公司 | The preparation method of silicon wafer |
CN109559988A (en) * | 2018-11-30 | 2019-04-02 | 德淮半导体有限公司 | The preparation method and device of silicon wafer |
CN113089092A (en) * | 2019-12-23 | 2021-07-09 | 比亚迪股份有限公司 | Preparation method of silicon wafer, silicon wafer and battery piece |
CN114182355A (en) * | 2021-11-30 | 2022-03-15 | 徐州鑫晶半导体科技有限公司 | Method for eliminating gap type defect B-swirl, silicon wafer and electronic device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207601A (en) * | 2002-12-26 | 2004-07-22 | Sumitomo Mitsubishi Silicon Corp | Method for heat treatment of silicon wafer |
CN1697130A (en) * | 2004-05-10 | 2005-11-16 | 希特隆股份有限公司 | Silicon wafer and method for manufacturing the same |
US20060027161A1 (en) * | 2004-02-09 | 2006-02-09 | Sumco Corporation | Method for heat-treating silicon wafer and silicon wafer |
JP2008227060A (en) * | 2007-03-12 | 2008-09-25 | Covalent Materials Corp | Method of manufacturing annealed wafer |
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2012
- 2012-11-16 CN CN201210465601.0A patent/CN103820862A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207601A (en) * | 2002-12-26 | 2004-07-22 | Sumitomo Mitsubishi Silicon Corp | Method for heat treatment of silicon wafer |
US20060027161A1 (en) * | 2004-02-09 | 2006-02-09 | Sumco Corporation | Method for heat-treating silicon wafer and silicon wafer |
CN1697130A (en) * | 2004-05-10 | 2005-11-16 | 希特隆股份有限公司 | Silicon wafer and method for manufacturing the same |
JP2008227060A (en) * | 2007-03-12 | 2008-09-25 | Covalent Materials Corp | Method of manufacturing annealed wafer |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106688080A (en) * | 2014-09-08 | 2017-05-17 | 三菱电机株式会社 | Semiconductor annealing apparatus |
CN104651946A (en) * | 2015-03-19 | 2015-05-27 | 太原理工大学 | Silicon waveguide surface smoothing process based on silicon hydrogen bond current density method |
CN105470129A (en) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | Method for eliminating impact on minority carrier diffusion length from thermal donor |
CN105470129B (en) * | 2015-12-01 | 2018-10-16 | 北京北方华创微电子装备有限公司 | A method of eliminating oxygen Thermal donor influences minority diffusion length |
CN106920746A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving silicon chip surface microdefect |
CN106920745A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | It is a kind of to eliminate the light method for mixing annealing silicon wafer surface COP |
CN106257625A (en) * | 2016-08-19 | 2016-12-28 | 横店集团东磁股份有限公司 | A kind of stack high-temperature annealing process |
CN106257625B (en) * | 2016-08-19 | 2019-02-05 | 横店集团东磁股份有限公司 | A kind of stack high-temperature annealing process |
CN109137068B (en) * | 2018-08-09 | 2020-10-16 | 锦州神工半导体股份有限公司 | Annealing method of monocrystalline silicon wafer |
CN109137068A (en) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | A kind of method for annealing of monocrystalline silicon piece |
CN109166799A (en) * | 2018-09-05 | 2019-01-08 | 德淮半导体有限公司 | The preparation method of silicon wafer |
CN109559988A (en) * | 2018-11-30 | 2019-04-02 | 德淮半导体有限公司 | The preparation method and device of silicon wafer |
CN113089092A (en) * | 2019-12-23 | 2021-07-09 | 比亚迪股份有限公司 | Preparation method of silicon wafer, silicon wafer and battery piece |
CN113089092B (en) * | 2019-12-23 | 2022-09-09 | 比亚迪股份有限公司 | Preparation method of silicon wafer, silicon wafer and battery piece |
CN114182355A (en) * | 2021-11-30 | 2022-03-15 | 徐州鑫晶半导体科技有限公司 | Method for eliminating gap type defect B-swirl, silicon wafer and electronic device |
WO2023098675A1 (en) * | 2021-11-30 | 2023-06-08 | 中环领先半导体材料有限公司 | Method for eliminating gap-type defect b-swirl, and silicon wafer and electronic device |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Application publication date: 20140528 |