CN106257625B - A kind of stack high-temperature annealing process - Google Patents
A kind of stack high-temperature annealing process Download PDFInfo
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- CN106257625B CN106257625B CN201610707170.2A CN201610707170A CN106257625B CN 106257625 B CN106257625 B CN 106257625B CN 201610707170 A CN201610707170 A CN 201610707170A CN 106257625 B CN106257625 B CN 106257625B
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- 238000000137 annealing Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010453 quartz Substances 0.000 claims abstract description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 238000009792 diffusion process Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000003708 ampul Substances 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- 239000004575 stone Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 5
- 238000011068 loading method Methods 0.000 abstract description 5
- 238000012797 qualification Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 206010027146 Melanoderma Diseases 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 108010063955 thrombin receptor peptide (42-47) Proteins 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of stack high-temperature annealing process.It is put into the quartzy horse of annealing specific steps are as follows: (1) stacks the silicon wafer after etching neatly；(2) silicon wafer is covered on the silicon wafer of quartzy horse and pressed with quartz cover plate, and quartzy horse is sent into High temperature diffusion/oxidation furnace；(3) High temperature diffusion/oxidation furnace boiler tube is heated up and is stablized and annealed；(4) cooling is come out of the stove: High temperature diffusion/oxidation furnace boiler tube being cooled down, is come out of the stove.The beneficial effects of the present invention are: the silicon chip surface and air insulated of heap poststack, effective solution thermal oxidation technology there are the problem of, it is easy to operate, the consuming time is short, is easy to mass production, while yield is high, cell piece improved efficiency amplitude is big, and the problems such as chipping, arrisdefect, crack, fragment that silicon wafer occurs during loading, unloading boat can be effectively reduced, reduce the handling boat time, improves the quality and qualification rate of cell piece.
Description
Technical field
The present invention relates to photovoltaic correlative technology fields, refer in particular to a kind of stack high-temperature annealing process.
Background technique
In silicon solar cell, transfer efficiency highest, it is monocrystaline silicon solar cell that technology is most mature.Monocrystalline silicon battery
Because the single crystal silicon material of high quality and advanced Treatment technique for processing, show excellent performance.
Wherein, diffusion is one of critical process of production process of crystal silicon solar energy battery, it is to expand P-type wafer
Scattered rear surface becomes N-type, to form P-N junction, thus silicon wafer just has photovoltaic effect.Diffusion, which needs to hold using a kind of silicon wafer, to cut
Device places silicon wafer on the apparatus, then is placed on to be sent on carbonization paddle by the silicon wafer carrying device equipped with silicon wafer again and spread
Carry out concentration diffusion in furnace, quartz because its material purity height, high temperature resistant, it is acidproof, alkaline-resisting due to become and make this bogey material
The first choice of material is known as quartz boat with the silicon wafer carrying device that quartz material is made into.One qualified quartz boat cost is very high, uses stone
The silicon wafer carrying device of product made in Great Britain haves the shortcomings that frangible.The quartz boat being commonly used is perpendicular by four horizontal bars and four
The frame structure that straight-bar encloses offers silicon wafer card slot on four horizontal bars, and silicon wafer compartment of terrain is inserted in silicon wafer slot, and four
Root vertical bar is four support legs of entire quartz boat, and the pressure that the support leg of quartz boat is born is excessive, it is easy to it damages,
Entire quartz boat service life is caused not grown.Meanwhile two handles on quartz boat can be because often introduce when placing silicon wafer
Pollutant, so that pollutant mixes in silicon wafer when diffusion, so that color difference occurs in the cell piece produced.
Tradition has the crystal silicon battery production process of thermal oxidation technology are as follows: and making herbs into wool → phosphorus diffusion → etching → thermal oxide →
PECVD plated film → printing-sintering, thermal oxide is by the way of quartz boat inserted sheet, every silicon wafer spacing 2.38-4.76mm, silicon wafer
It is directly contacted with air, surface is easy contaminated, and it is bad that the cell piece produced is easy to appear blackspot under color difference and EL etc.
Situation.In addition, quartz boat is being used for high-temperature annealing process, there is complicated for operation, consuming time is long, is loading and unloading piece process
In, it is also easy to the problems such as chipping, crack, fragment occur, influences battery tablet quality.
Summary of the invention
The present invention is in order to overcome the above deficiencies in the prior art, to provide a kind of easy to operate and guarantee battery
The stack high-temperature annealing process of tablet quality.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of stack high-temperature annealing process, specific steps are as follows:
(1) silicon wafer after etching is stacked neatly in 100-150 piece/folded mode, is put into the quartzy horse of annealing；
(2) silicon wafer is covered on the silicon wafer of quartzy horse and pressed with quartz cover plate, and quartzy horse is sent into High temperature diffusion/oxygen
Change in furnace；
(3) High temperature diffusion/oxidation furnace boiler tube is heated up and is stablized at 650-850 DEG C, annealed, soaking time
10-30min is passed through the nitrogen of 20000sccm；
(4) cooling is come out of the stove: High temperature diffusion/oxidation furnace boiler tube being cooled to 600-700 DEG C, soaking time 600s comes out of the stove.
The present invention substitutes the thermal oxidation process of traditional quartz boat blade inserting with the method for stack high-temperature annealing process, will
Silicon wafer is stacked after etching in 100-150 piece/folded mode, the silicon chip surface and air insulated of heap poststack, so that silicon wafer table
Face will not be contaminated, so that a problem that blackspot under color difference and EL will not occur in the cell piece produced, effectively
Solve the problems, such as that thermal oxidation technology exists；Have that easy to operate, to expend the time short etc. excellent using above-mentioned high-temperature annealing process
Point, while during loading and unloading piece, it is not easy to there is the problems such as chipping, crack, fragment, ensure that the quality of cell piece.
Preferably, in step (1) and step (2), if the quartzy horse include quartzy bottom plate, quartz baffle and
Drystone English thin bar, it is described quartz thin bar a part be placed in the left and right sides of quartzy bottom plate, it is described quartz thin bar it is another
It is partially disposed on quartz baffle, the quartz baffle is placed on the front and rear sides side of quartzy bottom plate.Quartzy horse is by quartzy bottom
Plate, quartzy thin bar and quartz baffle constitute a solid region, which stacks silicon wafer for placing, design in this way so that
To the easy to operate of silicon wafer, it is easy to mass production, while yield is high, cell piece improved efficiency amplitude is big, and can effectively reduce
The problems such as chipping that silicon wafer occurs during loading, unloading boat, arrisdefect, crack, fragment, reduces the handling boat time, improves production
Quality and qualification rate.
Preferably, the left and right sides of the quartz bottom plate are equipped with four quartzy thin bars, wherein a left side for quartzy bottom plate
There are two quartzy thin bars on side, there are two quartzy thin bars in the right edge of quartzy bottom plate, left and right sides on quartzy bottom plate
Quartzy thin bar bilateral symmetry is distributed.It is distributed, can be placed on quartzy horse convenient for positioning by symmetrical quartzy thin bar
Silicon wafer improve the quality and qualification rate of product so that the silicon wafer being entirely stacked is uniform.
Preferably, being equipped with gravelstone on two quartzy thin bar upper end lateral surfaces of left and right sides on the quartz bottom plate
Ying Guan, using welded connecting between the small quartz ampoule and quartzy thin bar.The design of small quartz ampoule is for external boat fork fork
Enter into small quartz ampoule, and move quartzy horse by small quartz ampoule, reduces influence of the external contaminants to quartzy horse.
Preferably, the shape of the quartz bottom plate is square, the quartz baffle is equipped at least one quartz
Thin bar, wherein symmetrical before and after the quartz baffle of front and back two sides on quartzy bottom plate.Design by quartz baffle be in order to
The placement location of restriction silicon wafer, and the design of quartzy thin bar, are to be able to carry out matching positioning with quartz cover plate.
Preferably, the front and rear sides side middle of the quartz bottom plate is equipped with out film trap, the bottom of the quartz bottom plate
Portion is surrounded by support leg.The abrasion for reducing quartzy bottom plate improves the service life of the device.
Preferably, the quartzy bottom plate is equipped with several hollow out windows, the hollow out window is evenly distributed on quartzy bottom
On plate.By the design of hollow out window, high-temperature annealing furnace can be facilitated to carry out high temperature to the silicon wafer in quartzy horse and retract processing.
Preferably, the quartz cover plate includes cover board body and quartzy caping, the shape and stone of the cover board body
The shape of English bottom plate is consistent, and the edge of the cover board body is equipped with groove corresponding with quartzy thin bar, described
Quartz cover overhead is at the center of cover board body.Structure is simple, easy to operate.
The beneficial effects of the present invention are: the silicon chip surface and air insulated of heap poststack, effective solution thermal oxidation technology
There are the problem of, easy to operate, it is short to expend the time, is easy to mass production, while yield is high, and cell piece improved efficiency amplitude is big, and
The problems such as chipping, the arrisdefect, crack, fragment that silicon wafer occurs during loading, unloading boat can be effectively reduced, reduce handling boat
Time improves the quality and qualification rate of cell piece.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of quartzy horse；
Fig. 2 is the left view of Fig. 1；
Fig. 3 is the structural schematic diagram of quartz cover plate.
In figure: 1. quartzy bottom plates, 2. hollow out windows, 3. quartzy thin bars, 4. support legs, 5. small quartz ampoules, 6. go out film trap, 7. stones
English baffle, 8. cover board bodies, 9. quartzy caping, 10. grooves.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and detailed description.
A kind of stack high-temperature annealing process, specific steps are as follows:
(1) silicon wafer after etching is stacked neatly in 100-150 piece/folded mode, is put into the quartzy horse of annealing；
(2) silicon wafer is covered on the silicon wafer of quartzy horse and pressed with quartz cover plate, and quartzy horse is sent into High temperature diffusion/oxygen
Change in furnace；
(3) High temperature diffusion/oxidation furnace boiler tube is heated up and is stablized at 650-850 DEG C, annealed, soaking time
10-30min is passed through the nitrogen of 20000sccm；
(4) cooling is come out of the stove: High temperature diffusion/oxidation furnace boiler tube being cooled to 600-700 DEG C, soaking time 600s comes out of the stove.
Wherein: as shown in Figure 1 and Figure 2, quartzy horse includes quartzy bottom plate 1, quartz baffle 7 and several quartzy thin bars 3, stone
A part of English thin bar 3 is placed in the left and right sides of quartzy bottom plate 1, and another part of quartzy thin bar 3 is placed in quartz baffle 7
On, quartz baffle 7 is placed on the front and rear sides side of quartzy bottom plate 1.It is thin that the left and right sides of quartzy bottom plate 1 are equipped with four quartz
Bar 3 has two quartzy thin bars wherein there is two quartzy thin bars 3 on the left side of quartzy bottom plate 1 in the right edge of quartzy bottom plate 1
3, the quartzy thin bar 3 of left and right sides is symmetrically distributed on quartzy bottom plate 1.Two stones of left and right sides on quartzy bottom plate 1
Small quartz ampoule 5 is equipped on 3 upper end lateral surface of English thin bar, using welded connecting between small quartz ampoule 5 and quartzy thin bar 3.Quartz
The shape of bottom plate 1 is square, and quartz baffle 7 is equipped at least one quartz thin bar 3, wherein front and rear sides on quartzy bottom plate 1
7 front and back of quartz baffle on side is symmetrical.The front and rear sides side middle of quartzy bottom plate 1 is equipped with out film trap 6, quartzy bottom plate 1
Bottom be surrounded by support leg 4.Quartzy bottom plate 1 is equipped with several hollow out windows 2, and hollow out window 2 is evenly distributed on quartzy bottom plate 1
On.As shown in figure 3, quartz cover plate includes cover board body 8 and quartzy caping 9, the shape of the shape of cover board body 8 and quartzy bottom plate 1
Shape is consistent, and the edge of cover board body 8 is equipped with groove 10 corresponding with quartzy thin bar 3, and quartzy caping 9 is placed in cover board
At the center of ontology 8.
Embodiment 1:
(1) by the M2 monocrystalline silicon piece after etching by 100/it is folded in a manner of stack neat, be put into the quartzy horse of annealing
In；
(2) silicon wafer is covered on the silicon wafer of quartzy horse and pressed with quartz cover plate, and quartzy horse is sent into High temperature diffusion/oxygen
Change in furnace；
(3) High temperature diffusion/oxidation furnace boiler tube is heated up and is stablized at 650 DEG C, annealed, soaking time 20min,
It is passed through the nitrogen of 20000sccm；
(4) cooling is come out of the stove: High temperature diffusion/oxidation furnace boiler tube being cooled to 600 DEG C, soaking time 600s comes out of the stove.
After cooling, sheet resistance size is tested.Meanwhile using traditional high-temperature annealing process to the M2 monocrystalline silicon piece after etching into
Row processing after cooling, tests sheet resistance size.
Electrical performance of cell parameter comparison is as shown in table 1 below.
1 electrical performance of cell parameter comparison table of table
| Technique | Uoc | Isc | Rs | Rsh | FF | NCell | Film source |
| Conventional anneal | 0.6436 | 9.443 | 0.0022 | 138.7 | 80.31 | 19.98% | Qixian County M2 |
| Pack annealing | 0.6481 | 9.489 | 0.0024 | 135.6 | 79.95 | 20.12% | Qixian County M2 |
Using the silicon wafer stack high-temperature annealing process of the present apparatus, Uoc promotion is particularly evident, as shown in table 1, cell piece
Uoc promotion reaches 4.5mV, and cell piece transfer efficiency promotes 0.14%.
Claims (7)
1. a kind of stack high-temperature annealing process, characterized in that specific steps are as follows:
(1) silicon wafer after etching is stacked neatly in 100-150 piece/folded mode, is put into the quartzy horse of annealing；
(2) silicon wafer is covered on the silicon wafer of quartzy horse and pressed with quartz cover plate, and quartzy horse is sent into High temperature diffusion/oxidation furnace
In；
(3) High temperature diffusion/oxidation furnace boiler tube is heated up and is stablized at 650-850 DEG C, annealed, soaking time 10-
30min is passed through the nitrogen of 20000sccm；
(4) cooling is come out of the stove: High temperature diffusion/oxidation furnace boiler tube being cooled to 600-700 DEG C, soaking time 600s comes out of the stove；
In step (1) and step (2), the quartzy horse includes that quartzy bottom plate (1), quartz baffle (7) and several quartz are thin
A part of bar (3), the quartz thin bar (3) is placed in the left and right sides of quartzy bottom plate (1), the quartz thin bar (3)
Another part is placed on quartz baffle (7), and the quartz baffle (7) is placed on the front and rear sides side of quartzy bottom plate (1).
2. a kind of stack high-temperature annealing process according to claim 1, characterized in that a left side for the quartz bottom plate (1)
Right two sides are equipped with four quartzy thin bars (3), wherein having two quartzy thin bars (3), quartz on the left side of quartzy bottom plate (1)
There are two quartzy thin bars (3) in the right edge of bottom plate (1), quartzy thin bar (3) left and right pair of left and right sides on quartzy bottom plate (1)
Claim distribution.
3. a kind of stack high-temperature annealing process according to claim 2, characterized in that left on the quartz bottom plate (1)
It is equipped with small quartz ampoule (5) on quartzy thin bar (3) upper end lateral surface of two of right two sides, the small quartz ampoule (5) and stone
Using welded connecting between English thin bar (3).
4. a kind of stack high-temperature annealing process according to claim 1, characterized in that the shape of the quartz bottom plate (1)
Shape is square, and the quartz baffle (7) is equipped at least one quartz thin bar (3), wherein front and back two on quartzy bottom plate (1)
It is symmetrical before and after the quartz baffle (7) of side.
5. a kind of stack high-temperature annealing process according to claim 1 or 2 or 3 or 4, characterized in that the quartz bottom
The front and rear sides side middle of plate (1) is equipped with out film trap (6), and the bottom of the quartz bottom plate (1) is surrounded by support leg
(4)。
6. a kind of stack high-temperature annealing process according to claim 1 or 2 or 3 or 4, characterized in that the quartz
Bottom plate (1) is equipped with several hollow out windows (2), and the hollow out window (2) is evenly distributed on quartzy bottom plate (1).
7. a kind of stack high-temperature annealing process according to claim 1, characterized in that in step (2), the stone
English cover board includes cover board body (8) and quartzy caping (9), the shape phase of the shape of the cover board body (8) and quartzy bottom plate (1)
Unanimously, the edge of the cover board body (8) is equipped with groove (10) corresponding with quartzy thin bar (3), the quartz
Caping (9) is placed at the center of cover board body (8).
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| US20200381577A1 (en) * | 2018-01-18 | 2020-12-03 | The Solaria Corporation | Method of manufacturing shingled solar modules |
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
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| CN101640172A (en) * | 2009-08-19 | 2010-02-03 | 株洲南车时代电气股份有限公司 | Aluminum diffusing method |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
| TW201316538A (en) * | 2011-10-06 | 2013-04-16 | Univ Nat Taiwan | A method for fabricating a solar cell |
| CN103820862A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Method for preparing high-temperature annealing silicon wafer |
| CN103928317A (en) * | 2014-04-28 | 2014-07-16 | 北京七星华创电子股份有限公司 | Method for improving film formation uniformity of wafer |
| CN105552000A (en) * | 2015-12-14 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | Depressurizing diffusion furnace and carrier plate bearing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012151410A1 (en) * | 2011-05-03 | 2012-11-08 | Sandvik Thermal Process, Inc | Novel doping process for solar cell manufacture |
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- 2016-08-19 CN CN201610707170.2A patent/CN106257625B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640172A (en) * | 2009-08-19 | 2010-02-03 | 株洲南车时代电气股份有限公司 | Aluminum diffusing method |
| TW201316538A (en) * | 2011-10-06 | 2013-04-16 | Univ Nat Taiwan | A method for fabricating a solar cell |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
| CN103820862A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Method for preparing high-temperature annealing silicon wafer |
| CN103928317A (en) * | 2014-04-28 | 2014-07-16 | 北京七星华创电子股份有限公司 | Method for improving film formation uniformity of wafer |
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