CN103777066A - Microelectronic mechanical dual channel microwave power detection system and preparation method thereof - Google Patents
Microelectronic mechanical dual channel microwave power detection system and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a dual channel microwave power detection system based on a microelectronic mechanical microwave power sensor and a preparation method thereof. The system has the advantages of simple structure, large measurement range and no direct current power consumption. The system is based on a gallium arsenide substrate. A coplanar waveguide transmission line (A), a thermoelectric MEMS microwave power sensor (B) and an MEMS clamped beam capacitor type microwave power sensor (C) are designed on the substrate. When the power of a microwave signal is small, the thermoelectric MEMS microwave power sensor carries out detection according to the one-to-one corresponding relationship between the thermopile output voltage and the microwave power. When the power of the microwave signal is large, the MEMS clamped beam capacitor type microwave power sensor carries out detection. A square mass block is designed on an MEMS clamped beam above the coplanar waveguide transmission line. The area with the coplanar waveguide transmission line is increased, and at the same time the weight of the center position of the MEMS clamped beam is increased. Static power is more likely to cause large deformation of the MEMS clamped beam, and the system sensitivity is improved.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, particularly a kind of based on fixed beam structure double channels microwave power detecting system and preparation method thereof.
Background technology
In the microwave study of microelectromechanical systems (MEMS), microwave power is an important parameter that characterizes microwave signal.In the generation of microwave signal, transmission and receive in the research of links, the detection of microwave power is absolutely necessary.Modal microwave power detector is the microwave power detector based on thermoelectricity transfer principle, it changes into heat microwave signal by pull-up resistor, and then utilizes the Seebeck effect of thermoelectric pile this heat to be converted to the direct voltage output being directly proportional to microwave power to be measured.But the shortcoming of traditional microwave power sensor is that the signal amplitude of measuring is smaller, external coupling mechanism or the attenuator of signal demand that measuring amplitude is larger.And the present invention can solve problem above well.
Summary of the invention
The object of the invention is to provide a kind of microelectron-mechanical double channels microwave power detecting system, and this system can be measured the power of microwave signal, and the amplitude range of measuring-signal greatly, does not need to consume DC power, and is convenient to integrated.
The present invention solves the technical scheme that its technical matters takes: microelectron-mechanical double channels microwave power detecting system of the present invention is to be substrate by gallium arsenide, is provided with coplanar waveguide transmission line, MEMS clamped beam capacitance microwave power sensor and thermoelectric (al) type MEMS microwave power detector composition on substrate.When microwave power to be measured hour, MEMS clamped beam cannot be drop-down, is connected to thermoelectric (al) type MEMS microwave power detector by coplanar waveguide transmission line, microwave power to be measured is detected by thermoelectric (al) type MEMS microwave power detector; In the time that microwave power to be measured is larger, MEMS clamped beam is drop-down, is connected to MEMS clamped beam capacitance microwave power sensor by coplanar waveguide transmission line, and microwave power to be measured is detected by MEMS clamped beam capacitance microwave power sensor.Coplanar waveguide transmission line of the present invention is made up of center signal line and ground wire.
MEMS clamped beam capacitance microwave power sensor of the present invention, centre in gallium arsenide substrate is provided with the signal wire 1 of CPW, be respectively equipped with the ground wire 2 of CPW in the both sides of the signal wire 1 of CPW, clamped beam 4 is provided with sensing electrode 3 below, sensing electrode 3 is connected to an end 6 of capacitance detecting port by film bridging wiring 5, CPW ground wire 2 connects another end 7 of capacitance detecting port, on CPW signal wire 1 below connecting line below film bridge 5 and clamped beam 4, sensing electrode 5, is all provided with silicon nitride medium layer 8.
Thermoelectric (al) type MEMS microwave power detector of the present invention is two resistance 9 by the parallel connection of co-planar waveguide end, thermoelectric pile 10, and the derby 12 of thermoelectric pile output port 11 and increase cold junction temperature stability forms.
MEMS clamped beam capacitance microwave power sensor of the present invention is take gallium arsenide as substrate, and the centre on substrate is provided with the signal wire of CPW, is respectively equipped with the ground wire of CPW in the both sides of the signal wire of CPW, the sensing electrode of clamped beam below.Ground wire at CPW is connect by film bridging, sensing electrode is connected to an end of capacitance detecting port by the connecting line of film bridge below, the ground wire of CPW connects another end of capacitance detecting port, on the signal wire of the CPW below connecting line and clamped beam below film bridge, sensing electrode, is all provided with silicon nitride medium layer;
Thermoelectric (al) type MEMS microwave power detector of the present invention is made up of the derby of two resistance, thermoelectric pile, output voltage detection port and the steady heat pile cold junction temperature of the parallel connection of co-planar waveguide end.
The present invention also provides a kind of preparation method of microelectron-mechanical microwave power detection system, and the method comprises the steps:
Step 1: prepare gallium arsenide substrate: what select is unadulterated gallium arsenide substrate;
Step 2: Implantation N on substrate
+the GaAs of type, the GaAs arm of formation thermocouple;
Step 3: deposit on substrate, etching tantalum nitride, the parallel resistance of formation co-planar waveguide end, i.e. tantalum nitride resistance;
Step 4: sputter gold on substrate, peel off removal photoresist: form golden arm, coplanar waveguide transmission line, the sensing electrode of thermocouple, the thickness of sputter is 0.3 μ m;
Step 5: deposit silicon nitride dielectric layer: with the growth of plasma enhanced CVD method technique
silicon nitride medium layer;
Step 6: photoetching etch silicon nitride dielectric layer; Silicon nitride on the center signal line of reservation clamped beam below CPW, connecting line and the sensing electrode of film bridge below;
Step 7: deposit photoetching polyimide sacrificial layer: the thick polyimide sacrificial layer of deposit 1.6 μ m, the thickness of polyimide sacrificial layer has determined the height between clamped beam film bridge and silicon nitride medium layer, photoetching polyimide sacrificial layer, only retains the sacrifice layer under clamped beam film bridge;
Step 8: sputtered titanium/gold/titanium: the down payment of sputter for electroplating coplanar waveguide transmission line and clamped beam film bridge, the thickness of titanium/gold/titanium is
Step 9: electrogilding: electroplate coplanar waveguide transmission line and clamped beam film bridge, thickness is 2 μ m;
Step 10: remove photoresist, releasing sacrificial layer: discharge the polyimide sacrificial layer of fixed beam structure below with developer solution, and with absolute ethyl alcohol dehydration, form the clamped beam film bridge suspending.
Beneficial effect:
1, dynamic range is large: MEMS clamped beam capacitance microwave power sensor is applicable to detect high-power signal, and thermoelectric (al) type MEMS microwave power detector is applicable to detect low-power level signal;
2, unfailing performance is high: in the time that microwave signal power is very large, MEMS clamped beam capacitance microwave power sensor is similar to a shunt capacitance, it can be coupled out most microwave powers, can play the effect that protection thermoelectric (al) type MEMS microwave power detector is not burnt;
3, sensitivity improves: the MEMS clamped beam above coplanar waveguide transmission line has designed a foursquare mass, increase the area with coplanar waveguide transmission line, the weight that has simultaneously increased MEMS clamped beam center, makes electrostatic force more easily cause the deformation that MEMS clamped beam is large.
The present invention is based on MEMS technology, has the principal advantages of MEMS, as little in volume, lightweight, low in energy consumption etc.This structure is all that passive device forms, and does not need to consume DC power; And completely compatible with monolithic integrated microwave circuit (MMIC) technique, to be convenient to integratedly, this series of advantages is that traditional microwave power detector is incomparable, therefore it has good research and using value.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of double channels microwave power detecting system of the present invention.
Identifier declaration: A-coplanar waveguide transmission line; B-thermoelectric (al) type MEMS microwave power detector; C-MEMS clamped beam capacitance microwave power sensor.
Fig. 2 is the structural representation of double channels microwave power detecting system of the present invention.
The center signal line of identifier declaration: 1-CPW; The ground wire of 2-CPW; The sensing electrode of 3-capacitive MEMS microwave power detector; The clamped beam of 4-capacitive MEMS microwave power detector; 5-capacitive MEMS microwave power detector film bridge; 6-capacitive MEMS microwave power detector output terminal port 1; 7-capacitive MEMS microwave power detector output terminal port two; 8-silicon nitride (SiN) dielectric layer; 9-thermoelectric (al) type MEMS microwave power detector resistance (TaN); 10-thermoelectric (al) type MEMS microwave power detector thermoelectric pile; The output port of 11-thermoelectric (al) type MEMS microwave power detector; 12-increases the derby of cold junction temperature stability.
Embodiment
Below in conjunction with Figure of description, the invention is described in further detail.
As shown in Figure 1, when microwave power to be measured hour, MEMS clamped beam cannot be drop-down, is connected to thermoelectric (al) type MEMS microwave power detector by coplanar waveguide transmission line, microwave power to be measured is detected by thermoelectric (al) type MEMS microwave power detector; In the time that microwave power to be measured is larger, MEMS clamped beam is drop-down, is connected to MEMS clamped beam capacitance microwave power sensor by coplanar waveguide transmission line, and microwave power to be measured is detected by MEMS clamped beam capacitance microwave power sensor.Adopt these two kinds of detection modes not only can expand the amplitude range that detects microwave signal; and in the time that microwave signal is excessive, MEMS clamped beam capacitance microwave power sensor can be by shunting the effect that protection thermoelectric (al) type MEMS microwave power detector is not burnt of playing.
MEMS clamped beam capacitance microwave power sensor is as shown in Figure 2: take gallium arsenide as substrate, centre on substrate is designed with signal input port, be respectively equipped with the ground wire of CPW in the signal wire both sides of CPW, on the ground wire of CPW, be provided with bridge pier, on bridge pier, be provided with clamped beam, below clamped beam, (side of the signal wire of CPW) is provided with sensing electrode, and sensing electrode is connected to a port of capacitance detecting by film bridging wiring, and the ground wire of CPW connects another end of capacitance detecting.Connecting line and sensing electrode upper surface below clamped beam below the signal wire of CPW, film bridge are provided with silicon nitride medium layer.Microwave signal is by a relatively large margin in the time of the co-planar waveguide (CPW) by with clamped beam, can produce electrostatic force, thereby clamped beam is drop-down, cause that between clamped beam and sensing electrode, electric capacity changes, measure electric capacity by capacitive detection circuit, its value is to be one to one with signal power amplitude, thereby detects the amplitude of signal power.
Thermoelectric (al) type MEMS microwave power detector as shown in Figure 2, at end two resistance in parallel of co-planar waveguide, the microwave power of two resistance absorption inputs in parallel, by thermoelectric pile, the microwave power of absorption is converted into electric potential difference, electric potential difference be with signal power amplitude one to one, thereby detect the power magnitude of signal.In order to make the cold junction of thermoelectric pile identical with underlayer temperature, connected a large-area metal on its side, the cold and hot end of thermoelectric pile is connected on the poor port of two sense potential.
Detection system of the present invention is to be substrate by gallium arsenide, is provided with coplanar waveguide transmission line, thermoelectric (al) type MEMS microwave power detector and MEMS clamped beam capacitance microwave power sensor composition on substrate;
The microwave signal power of system of the present invention hour is to be connected to thermoelectric (al) type MEMS microwave power detector by coplanar waveguide transmission line.
When the microwave signal power of system of the present invention is larger, it is the input end that is connected to MEMS clamped beam capacitance microwave power sensor by coplanar waveguide transmission line.
MEMS clamped beam capacitance microwave power sensor of the present invention, centre in gallium arsenide substrate is provided with the signal wire 1 of CPW, be respectively equipped with the ground wire 2 of CPW in the both sides of the signal wire 1 of CPW, clamped beam 4 is provided with sensing electrode 3 below, sensing electrode 3 is connected to an end 6 of capacitance detecting port by film bridging wiring 5, CPW ground wire 2 connects another end 7 of capacitance detecting port, on CPW signal wire 1 below connecting line below film bridge 5 and clamped beam 4, sensing electrode 5, is all provided with silicon nitride medium layer 8.
Thermoelectric (al) type MEMS microwave power detector of the present invention is two resistance 9 by the parallel connection of co-planar waveguide end, thermoelectric pile 10, and the derby 12 of thermoelectric pile output port 11 and increase cold junction temperature stability forms.
A preparation method for microelectron-mechanical double channels microwave power detecting system, the method comprises the steps:
1) prepare gallium arsenide substrate: what select is unadulterated gallium arsenide substrate;
2) Implantation N on substrate
+the GaAs of type, the GaAs arm of formation thermocouple;
3) deposit on substrate, etching tantalum nitride, the parallel resistance of formation co-planar waveguide end, i.e. tantalum nitride resistance;
4) sputter gold on substrate, peels off removal photoresist: form golden arm, coplanar waveguide transmission line, the sensing electrode of thermocouple, the thickness of sputter is 0.3 μ m;
5) deposit silicon nitride dielectric layer: with the growth of plasma enhanced CVD method technique
silicon nitride medium layer;
6) photoetching etch silicon nitride dielectric layer; Silicon nitride on the center signal line of reservation clamped beam below CPW, connecting line and the sensing electrode of film bridge below;
7) deposit photoetching polyimide sacrificial layer: the thick polyimide sacrificial layer of deposit 1.6 μ m, the thickness of polyimide sacrificial layer has determined the height between clamped beam film bridge and silicon nitride medium layer, photoetching polyimide sacrificial layer, only retains the sacrifice layer under clamped beam film bridge;
8) sputtered titanium/gold/titanium: the down payment of sputter for electroplating coplanar waveguide transmission line and clamped beam film bridge, the thickness of titanium/gold/titanium is
9) electrogilding: electroplate coplanar waveguide transmission line and clamped beam film bridge, thickness is 2 μ m;
10) remove photoresist, releasing sacrificial layer: discharge the polyimide sacrificial layer of fixed beam structure below with developer solution, and with absolute ethyl alcohol dehydration, form the clamped beam film bridge suspending.
Construction standard of the present invention is as follows:
1. double channels microwave power measurement: adopt thermoelectric (al) type MEMS microwave power detector and MEMS clamped beam capacitance microwave power sensor cascade structure, the former is applicable to the microwave signal that detection power is less, and the latter is applicable to the microwave signal that detection power is larger.
2. above the MEMS clamped beam above coplanar waveguide transmission line, there is a foursquare mass: the principle of work of MEMS clamped beam capacitance microwave power sensor is: microwave signal produces electrostatic force by drop-down clamped beam film bridge, cause the variation of electric capacity, detect electric capacity by capacitive detection circuit, thereby release the power magnitude of microwave signal.Above MEMS clamped beam above coplanar waveguide transmission line, design a foursquare mass, increase the area with coplanar waveguide transmission line, increased the weight of MEMS clamped beam center simultaneously, make electrostatic force more easily cause the deformation that MEMS clamped beam is large, the MEMS clamped beam capacitance microwave power sensor of this structure has higher sensitivity.
The structure that meets above condition is considered as of the present invention based on fixed beam structure double channels microwave power detecting system.
Claims (5)
1. a microelectron-mechanical double channels microwave power detecting system, it is characterized in that: described detection system is to be substrate by gallium arsenide, on substrate, be provided with coplanar waveguide transmission line, thermoelectric (al) type MEMS microwave power detector and MEMS clamped beam capacitance microwave power sensor composition; Described thermoelectric (al) type MEMS microwave power detector is made up of the derby of two resistance, thermoelectric pile, output voltage detection port and the steady heat pile cold junction temperature of the parallel connection of co-planar waveguide end; Described coplanar waveguide transmission line is made up of center signal line and ground wire; Above MEMS clamped beam above described coplanar waveguide transmission line, there is a foursquare mass.
2. a kind of microelectron-mechanical double channels microwave power detecting system according to claim 1, it is characterized in that: described MEMS clamped beam capacitance microwave power sensor, centre in gallium arsenide substrate is provided with the signal wire (1) of CPW, be respectively equipped with the ground wire (2) of CPW in the both sides of the signal wire (1) of CPW, clamped beam (4) is provided with sensing electrode (3) below, sensing electrode (3) is connected to an end (6) of capacitance detecting port by film bridging wiring (5), CPW ground wire (2) connects another end (7) of capacitance detecting port, the CPW signal wire (1) of the connecting line (5) below film bridge and clamped beam (4) below, on sensing electrode (5), be all provided with silicon nitride medium layer (8).
3. a kind of microelectron-mechanical double channels microwave power detecting system according to claim 1, it is characterized in that: described thermoelectric (al) type MEMS microwave power detector is two resistance (9) by the parallel connection of co-planar waveguide end, thermoelectric pile (10), derby (12) composition of thermoelectric pile output port (11) and increase cold junction temperature stability.
4. a kind of microelectron-mechanical double channels microwave power detecting system according to claim 1, is characterized in that: the microwave signal power of described system hour is to be connected to thermoelectric (al) type MEMS microwave power detector by coplanar waveguide transmission line; When the microwave signal power of described system is larger, it is the input end that is connected to MEMS clamped beam capacitance microwave power sensor by coplanar waveguide transmission line.
5. a preparation method for microelectron-mechanical double channels microwave power detecting system, is characterized in that, described method comprises the steps:
Step 1: prepare gallium arsenide substrate: what select is unadulterated semi-insulating GaAs substrate;
Step 2: Implantation N on substrate
+the GaAs of type, the GaAs arm (10) of formation thermocouple;
Step 3: deposit on substrate, etching tantalum nitride, form tantalum nitride resistance (9);
Step 4: sputter gold on substrate, peel off removal photoresist: form golden arm (10), coplanar waveguide transmission line (A), the sensing electrode (3) of thermocouple, the thickness of sputter is 0.3 μ m;
Step 5: deposit silicon nitride dielectric layer (8): with the growth of plasma enhanced CVD method technique
silicon nitride medium layer;
Step 6: photoetching etch silicon nitride dielectric layer; Silicon nitride on the center signal line (1) of reservation clamped beam below CPW, connecting line and the sensing electrode (3) of film bridge (5) below;
Step 7: deposit photoetching polyimide sacrificial layer: the thick polyimide sacrificial layer of deposit 1.6 μ m, the thickness of polyimide sacrificial layer has determined the height between clamped beam (4) and silicon nitride medium layer (8), photoetching polyimide sacrificial layer, only retains the sacrifice layer under clamped beam film bridge (4);
Step 8: sputtered titanium/gold/titanium: sputter is used for electroplating the down payment of coplanar waveguide transmission line (A) and clamped beam (4), and the thickness of titanium/gold/titanium is
Step 9: electrogilding: electroplate coplanar waveguide transmission line (A) and clamped beam film bridge (14), thickness is 2 μ m;
Step 10: remove photoresist, releasing sacrificial layer: discharge the polyimide sacrificial layer of fixed beam structure below with developer solution, and with absolute ethyl alcohol dehydration, form the clamped beam film bridge (4) suspending.
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