CN203310915U - Phase detector based on micro mechanical direct thermoelectric power sensor - Google Patents
Phase detector based on micro mechanical direct thermoelectric power sensor Download PDFInfo
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- CN203310915U CN203310915U CN201320353732XU CN201320353732U CN203310915U CN 203310915 U CN203310915 U CN 203310915U CN 201320353732X U CN201320353732X U CN 201320353732XU CN 201320353732 U CN201320353732 U CN 201320353732U CN 203310915 U CN203310915 U CN 203310915U
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Abstract
The utility model discloses a phase detector based on a micro mechanical direct thermoelectric power sensor. The phase detector comprises a substrate, a ground wire arranged on the substrate, an MEMS power combiner, a coplanar waveguide transmission wire, two groups of MEMS clamped beam structures, an MEMS direct thermoelectric microwave power sensor, an external voltage controlled oscillator and an external frequency meter. The MEMS power combiner is used for carrying out vector synthesis on two input signals. The MEMS direct thermoelectric microwave power sensor detects the power of a synthesized microwave signal. Finally direct current voltage is output. According to the utility model, the provided phase detector based on the micro mechanical direct thermoelectric power sensor has a novel structure; the composition module of a general phase detector is simplified; two modules of a discriminator and a low pass filter are directly simplified into a module composed of the MEMS power combiner and the MEMS direct thermoelectric microwave power sensor; the integration degree of the phase detector is improved; and the phase detector can be compatible with a GaAs monolithic microwave integration circuit.
Description
Technical field
The utility model relates to a kind of phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, belongs to microelectron-mechanical (MEMS) technology.
Background technology
In research of microwave technology, be an important parameter of microwave signal as the microwave phase of one of three large parameters (amplitude, frequency and phase place) of characterization signal.Microwave signal phase detector has a wide range of applications in the systems such as phased-array radar, antenna, phaselocked loop, phase measuring equipment.The principle of microwave signal phase detector is that phase differential is converted into to voltage, electric current and the frequency signal of being convenient to measure, and reflects phase differential by them.The method that realizes at present microwave phase detector mainly contains diode structure, multiplier architecture and vector calculus method, the vector calculus method with two kinds of fronts method, compare have low-power consumption, bandwidth, advantages of simple structure and simple.MEMS has that volume is little, low in energy consumption, low cost and other advantages, along with the development of MEMS technology and nowadays for the further investigation of the direct Thermoelectric Microwave Power Sensor of MEMS, make to utilize the MEMS technology to realize becoming possibility based on the phase detectors of the direct thermoelectric (al) type power sensor of micromechanics.
The utility model content
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides a kind of phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, by phase detector and two module reductions of low-pass filter, be directly one and close by the MEMS merit module that device and the direct Thermoelectric Microwave Power Sensor of MEMS form, to improve the integrated level of phase detectors.
Technical scheme: for achieving the above object, the technical solution adopted in the utility model is:
Phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics, comprise substrate, be arranged on ground wire, MEMS merit on substrate and close device, co-planar waveguide (CPW) transmission line, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and frequency meter, axis of symmetry of definition on substrate;
Described ground wire forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (ACPS) and the isolation resistance of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines by isolation resistance isolate, output terminal is connected;
Described coplanar waveguide transmission line forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines respectively, respectively as first signal input port and secondary signal input port; The output terminal of the described two sections asymmetric coplanar striplines rear access output coplanar waveguide transmission line that is connected, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam He Mao district, and top, two ends that described MEMS clamped beam is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by the anchor district respectively; Described MEMS clamped beam forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance, semiconductor thermocouple arm and direct current IOB, described signal output port is divided into two-way and by one group of tantalum nitride resistance, is connected with two sections side ground wires with the semiconductor thermocouple arm respectively, wherein one section side ground wire is by a direct current IOB access voltage controlled oscillator, and another section side ground wire is by another direct current IOB ground connection; Described two groups of tantalum nitride resistance and semiconductor thermocouple arm form cascaded structure;
The output signal access frequency meter of described voltage controlled oscillator.
Preferably, the part surface that is positioned at MEMS clamped beam below on described input coplanar waveguide transmission line is coated with the silicon nitride medium layer.
Preferably, between the double layer of metal of the connecting line between one of them direct current IOB and side ground wire, the silicon nitride medium layer is arranged.
Preferably, the power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and on the direct current IOB with the formal output measurement result of DC voltage.
Described substrate is gallium arsenide substrate.
In above-mentioned phase detectors, the CPW transmission line is for realizing the transmission of microwave signal.The MEMS clamped beam forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, and the design of this building-out capacitor can be dwindled the size that the MEMS merit is closed device when realizing the circuit impedance coupling, make the integrated level of whole phase detectors higher.The MEMS merit is closed device, and for the two paths of signals (first signal and secondary signal) that will input, to carry out vector synthetic, then by the direct Thermoelectric Microwave Power Sensor of MEMS, detected the power of the microwave signal after synthetic, last output dc voltage; The DC voltage of output directly is linked into the input end of voltage controlled oscillator, produces output signal by voltage controlled oscillator; The output signal access frequency meter that voltage controlled oscillator produces, then can extrapolate the phase differential between first signal and secondary signal by measured frequency, thereby realize the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics.
A kind of preparation method of the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics, comprise the steps:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of gallium arsenide is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate extension N
+Gallium arsenide, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will retain the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, MEMS clamped beam De Mao district;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(12) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output terminal and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
The down payment of evaporation for electroplating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(21) external voltage controlled oscillator and frequency meter.
Beneficial effect: the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics that the utility model provides not only have novel structure, and simplified the composition module of general phase detectors, it by phase detector and two module reductions of low-pass filter is directly one and closes by the MEMS merit module that device and the direct Thermoelectric Microwave Power Sensor of MEMS form, improved the integrated level of phase detectors, and can with GaAs monolithic integrated microwave circuit compatibility.
The accompanying drawing explanation
Fig. 1 is plan structure schematic diagram of the present utility model;
Fig. 2 is that the A-A' of Fig. 1 is to sectional view;
Fig. 3 is that the B-B' of Fig. 1 is to sectional view.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
Be the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics as shown in Figure 1, Figure 2, Figure 3 shows, comprise substrate 1, be arranged on ground wire 2, MEMS merit on substrate 1 and close device, coplanar waveguide transmission line 3, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and frequency meters, axis of symmetry of definition on substrate 1; Below with regard to each ingredient, illustrated.
Described ground wire 2 forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry.
Described MEMS merit is closed device, and for the two paths of signals (reference signal and feedback signal) that will input, to carry out vector synthetic, it forms along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines 4 and the isolation resistance 5 of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines 4 is connected by isolation resistance 5 isolation, output terminal.
Described coplanar waveguide transmission line 3 is be used to realizing the transmission of microwave signal, it forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines 4 respectively, respectively as first signal input port and secondary signal input port; The output terminal of the described two sections asymmetric coplanar striplines 4 rear access output coplanar waveguide transmission line that is connected, as signal output port.
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam 10He Mao district 11, and top, two ends that described MEMS clamped beam 10 is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district 11 respectively; The part surface that is positioned at MEMS clamped beam 10 belows on described input coplanar waveguide transmission line is coated with silicon nitride medium layer 9, described MEMS clamped beam 10 forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, the design of this building-out capacitor can be dwindled the MEMS power splitter when realizing the circuit impedance coupling size, make the integrated level of whole phase detectors higher.
The direct Thermoelectric Microwave Power Sensor of described MEMS detects and output dc voltage for the power that the MEMS merit is closed to the microwave signal after device synthesizes, it comprises two groups of tantalum nitride resistance 7, semiconductor thermocouple arm 6 and direct current IOB 8, described signal output port is divided into two-way and by one group of tantalum nitride resistance 7, is connected with two sections side ground wires with semiconductor thermocouple arm 6 respectively, wherein one section side ground wire is by a direct current IOB 8 access voltage controlled oscillators, and another section side ground wire is by another direct current IOB 8 ground connection; Described two groups of tantalum nitride resistance 7 and semiconductor thermocouple arm 6 form cascaded structure; Between the double layer of metal of the connecting line between one of them direct current IOB 8 and side ground wire, silicon nitride medium layer 9 is arranged.The power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and on direct current IOB 8 with the formal output measurement result of DC voltage.
The output signal access frequency meter of described voltage controlled oscillator, then can extrapolate the phase differential between first signal and secondary signal by measured frequency, thereby realize the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics.
A kind of preparation method of the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics, comprise the steps:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of gallium arsenide is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate extension N
+Gallium arsenide, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will retain the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, MEMS clamped beam De Mao district;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(12) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output terminal and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
The down payment of evaporation for electroplating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(21) external voltage controlled oscillator and frequency meter.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (4)
1. based on the phase detectors of the direct thermoelectric (al) type power sensor of micromechanics, it is characterized in that: comprise substrate (1), be arranged on ground wire (2), MEMS merit on substrate (1) and close device, coplanar waveguide transmission line (3), two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and frequency meter, at axis of symmetry of the upper definition of substrate (1);
Described ground wire (2) forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (4) and the isolation resistance (5) of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines (4) is connected by isolation resistance (5) isolation, output terminal;
Described coplanar waveguide transmission line (3) forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines (4) respectively, respectively as first signal input port and secondary signal input port; The output terminal of described two sections asymmetric coplanar striplines (4) the rear access output coplanar waveguide transmission line that is connected, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam (10) He Mao district (11), and top, two ends that described MEMS clamped beam (10) is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district (11) respectively; Described MEMS clamped beam (10) and the input coplanar waveguide transmission line that is positioned at its below form building-out capacitor;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance (7), semiconductor thermocouple arm (6) and direct current IOB (8), described signal output port is divided into two-way and by one group of tantalum nitride resistance (7), is connected with two sections side ground wires with semiconductor thermocouple arm (6) respectively, wherein one section side ground wire is by a direct current IOB (8) access voltage controlled oscillator, and another section side ground wire is by another direct current IOB (8) ground connection; Described two groups of tantalum nitride resistance (7) and semiconductor thermocouple arm (6) form cascaded structure;
The output signal access frequency meter of described voltage controlled oscillator.
2. phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1 is characterized in that: the part surface that is positioned at MEMS clamped beam (10) below on described input coplanar waveguide transmission line is coated with silicon nitride medium layer (9).
3. the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1, is characterized in that: between the double layer of metal of the connecting line between one of them direct current IOB (8) and side ground wire, silicon nitride medium layer (9) is arranged.
4. phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1, it is characterized in that: the power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and in the upper formal output measurement result with DC voltage of direct current IOB (8).
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| CN201320353732XU CN203310915U (en) | 2013-06-19 | 2013-06-19 | Phase detector based on micro mechanical direct thermoelectric power sensor |
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| CN106841797B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
| CN106771604B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
| CN106771601B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate cantilever beam T junction direct-heating type unknown frequency millimeter wave phase detectors |
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