CN104655921B - Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection - Google Patents
Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection Download PDFInfo
- Publication number
- CN104655921B CN104655921B CN201510084666.4A CN201510084666A CN104655921B CN 104655921 B CN104655921 B CN 104655921B CN 201510084666 A CN201510084666 A CN 201510084666A CN 104655921 B CN104655921 B CN 104655921B
- Authority
- CN
- China
- Prior art keywords
- cantilever beam
- microwave power
- transmission line
- parallel
- mems cantilever
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses the microwave power detection systems and preparation method thereof based on MEMS cantilever beam parallel connection, this method is used for online measurement, in center signal line transmission process, electrostatic force can be generated between MEMS cantilever beam and transmission line, pull down cantilever beam, then the spacing between cantilever beam and test electrode becomes smaller, so that its capacitance changes, by the capacitance of measurement variation, one-to-one microwave power therewith is obtained.Microwave power detection system based on MEMS cantilever beam parallel connection of the invention includes gallium arsenide substrate, is equipped with surface wave guiding center signal wire (A), MEMS cantilever beam structure (B) and capacitance microwave power sensor (C) in parallel on substrate.When microwave signal is transmitted on the signal wire of surface wave guiding center, two MEMS cantilever beams in parallel generate displacement under the action of electrostatic force, are detected to power scale by capacitance microwave power sensor.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, in particular to a kind of microwave based on MEMS cantilever beam parallel connection
Power detecting system and preparation method thereof.
Background technique
In the microwave study of microelectromechanical systems (that is: MEMS), microwave power is a weight for characterizing microwave signal
Want parameter.In the generation of microwave signal, transmission and the research of reception links, the detection of microwave power is essential
's.Common online microwave power detection system is the manifold type microwave power detection system based on heat to electricity conversion principle, but
The detection system dynamic range is small, sensitive low.Since MEMS cantilever beam structure is more sensitive to microwave power signal, and MEMS
Cantilever beam incudes that the displacement that microwave signal generates is bigger compared with MEMS clamped beam, the dynamic range of systematic survey by cantilever beam position
It moves and determines, therefore the present invention can well solve above-mentioned problem.
Summary of the invention
It is and traditional it is an object of that present invention to provide a kind of microwave power detection system based on MEMS cantilever beam parallel connection
Online microwave power detection system is compared, which greatly improves the dynamic range and sensitivity of microwave power detection.
The technical scheme adopted by the invention to solve the technical problem is that: the present invention provides one kind to be based on MEMS cantilever beam
Microwave power detection system in parallel, the system include co-planar waveguide center signal line 1, cantilever beam 2, test electrode 3, press welding block
One 4, ground wire 5, air bridges 6, test electrode transmission line 7, press welding block 28, gallium arsenide substrate 9；9 top of gallium arsenide substrate
Equipped with coplanar waveguide transmission line, cantilever beam 2 is equipped with above co-planar waveguide center signal line (1)；Test is equipped with below cantilever beam 2
Electrode 3, test electrode 3 pass through gold thread connecting test electrode transmission line 7；Test electrode transmission line 7 connects press welding block by gold thread
28；Press welding block 1 passes through gold thread connecting cantilever beam 2；Air bridges 6 connect ground wire 5 by gold thread；The coplanar wave guide transmission
Line is made of co-planar waveguide center signal line 1, co-planar waveguide ground wire 5 and air bridges 6.
The transmission line of test electrode (3) of the present invention is drawn from the parallel direction of cantilever beam (2).
The present invention also provides a kind of preparation method of microwave power detection system based on MEMS cantilever beam parallel connection, the party
Method includes the following steps:
Step 1: preparing gallium arsenide substrate；What is selected is undoped gallium arsenide substrate；
Step 2: sputtered titanium/gold/titanium；Sputtering is for being electroplated coplanar waveguide transmission line, test electrode and parallel-connection structure MEMS
The down payment of cantilever beam, titanium/gold/titanium with a thickness of
Step 3: deposit silicon nitride dielectric layer；It is grown with plasma enhanced CVD method methodNitrogen
SiClx dielectric layer；
Step 4: photoetching and etch nitride silicon dielectric layer；Retain the center signal of CPW below parallel-connection structure MEMS cantilever beam
Silicon nitride on line, test electrode transmission line and on test electrode；
Step 5: depositing simultaneously photoetching polyimide sacrificial layer；The polyimide sacrificial layer of 1.6 μ m-thicks is deposited, polyimides is sacrificial
The thickness of domestic animal layer determines the height between parallel-connection structure MEMS cantilever beam and silicon nitride medium layer, photoetching polyimides sacrifice
Layer only retains the sacrificial layer under parallel-connection structure MEMS cantilever beam；
Step 6: electroplating gold；Coplanar waveguide transmission line and parallel-connection structure MEMS cantilever beam is electroplated, with a thickness of 2 μm；
Step 7: removal photoresist, releasing sacrificial layer；With the polyimides sacrifice below developer solution release cantilever beam structure
Layer, and be dehydrated with dehydrated alcohol, form the MEMS cantilever beam of parallel-connection structure.
The utility model has the advantages that
1, sensitivity of the present invention is very high, two MEMS cantilever beams in parallel is devised, since MEMS cantilever beam structure is to micro-
Power signal is more sensitive, and the sensitivity of device is greatly improved using MEMS cantilever beam structure in parallel.
2, matching of the present invention is very high, and the anchoring area of MEMS cantilever beam is designed among ground wire, MEMS cantilever beam is reduced
Influence to co-planar waveguide characteristic impedance.In addition, the transmission line of test electrode is drawn from the direction parallel with MEMS cantilever beam, and
It is not to be drawn from MEMS cantilever beam vertical direction, the influence this design reduces MEMS cantilever beam to co-planar waveguide characteristic impedance,
Improve the matching performance of device.
3, the present invention is the principal advantages based on micro-electronic mechanical system technique, with micro mechanical system, such as: small in size,
Light-weight, low in energy consumption etc., in addition it and monolithic integrated microwave circuit (that is: MMIC) method are completely compatible, convenient for integrated, Er Qieben
Invention is for online measurement, this series of advantages is that traditional online microwave power detection system is incomparable, because
This it there is research and application value well.
Detailed description of the invention
Fig. 1 is that the present invention is based on the schematic diagrams of the microwave power detection system of MEMS cantilever beam parallel connection.
Identifier declaration: A- co-planar waveguide center signal line；B- and connected MEMS cantilever beam structure；C- capacitance microwave power passes
Sensor.
Fig. 2 is that the present invention is based on the structural schematic diagrams of the microwave power detection system of MEMS cantilever beam parallel connection.
Identifier declaration: 1- co-planar waveguide center signal line；2- cantilever beam；3- tests electrode；4- press welding block one；5- ground wire；
6- air bridges；7- tests electrode transmission line；8- press welding block two；9- gallium arsenide substrate.
Fig. 3 is the method flow diagram of invention.
Specific embodiment
Below in conjunction with Figure of description, the present invention is described in further detail.
As shown in Figure 1, the present invention provides a kind of microwave power detection system based on MEMS cantilever beam parallel connection, the system
Including gallium arsenide substrate, it is equipped with coplanar waveguide transmission line and connected MEMS cantilever beam structure and capacitance microwave power on substrate
Sensor.When microwave power from co-planar waveguide center signal line end mouth A to port B transmit when, and connected MEMS cantilever beam structure with
Electrostatic force can be generated between coplanar waveguide transmission line, make and connected MEMS cantilever beam structure pulls down.So and connected MEMS cantilever beam knot
Spacing between structure and test electrode becomes smaller, and capacitance changes, and by the capacitance of measurement variation, obtains a pair therewith
The power magnitude for the microwave signal answered.
Of the invention and connected MEMS cantilever beam structure is to set that there are two cantilevers in parallel on co-planar waveguide center signal line 1
Beam 2, when microwave power from the port A of co-planar waveguide center signal line 1 to port B transmit when, and connected MEMS cantilever beam structure with
Electrostatic force can be generated between coplanar waveguide transmission line, pull down cantilever beam 2.
Capacitance microwave power sensor of the invention is by cantilever beam 2, test electrode 3, test electrode transmission line 7, pressure
Welding block 4 and press welding block 8 form.
Press welding block of the present invention includes press welding block 1 and press welding block 28.
As shown in Fig. 2, the present invention provides a kind of microwave power detection system based on MEMS cantilever beam parallel connection, the system
It is passed including co-planar waveguide center signal line 1, cantilever beam 2, test electrode 3, press welding block 1, ground wire 5, air bridges 6, test electrode
Defeated line 7, press welding block 28, gallium arsenide substrate 9；Coplanar waveguide transmission line is equipped with above the gallium arsenide substrate 9, in coplanar wave
Cantilever beam 2 is equipped with above guiding center signal wire 1；Test electrode 3 is equipped with below cantilever beam 2, test electrode 3 is connected by gold thread and surveyed
Try electrode transmission line 7；It tests electrode transmission line 7 and press welding block 28 is connected by gold thread；Press welding block 1 passes through gold thread connecting cantilever
Beam 2；Air bridges 6 connect ground wire 5 by gold thread.
Coplanar waveguide transmission line of the present invention is by co-planar waveguide center signal line 1, co-planar waveguide ground wire 5 and air
Bridge 6 forms.
The construction standard of system of the present invention includes the following:
1. system of the invention is to belong to online measurement detection system, microwave power to be measured is by outstanding based on MEMS
The capacitance microwave power sensor of arm beam parallel connection obtains.
2. the present invention is using two and the Design of Cantilever Beam of connected MEMS, due to cantilever beam surface wave guiding center signal wire together
Between generate electrostatic force, make MEMS cantilever beam pull down.To make cantilever beam and the spacing tested between electrode become smaller, capacitance hair
Raw to change, the cantilever beam of two MEMS uses parallel-connection structure here, keeps capacitance variations more obvious, to greatly improve measurement
Sensitivity.
3. the present invention is to design the anchoring area of MEMS cantilever beam among ground wire, MEMS cantilever beam is reduced to co-planar waveguide
The influence of characteristic impedance.In addition, the transmission line of test electrode is drawn from the direction parallel with MEMS cantilever beam, rather than from MEMS
Cantilever beam vertical direction is drawn.These designs are reduced influence of the MEMS cantilever beam to co-planar waveguide characteristic impedance, improve
The matching performance of device.
The structure for meeting conditions above is considered as the microwave power detection system of the invention based on MEMS cantilever beam parallel connection.
As shown in figure 3, the present invention also provides a kind of systems of microwave power detection system based on MEMS cantilever beam parallel connection
Preparation Method, described method includes following steps:
1) prepare gallium arsenide substrate: selection is undoped gallium arsenide substrate；
2) using plasma enhances chemical vapor deposition method；
Sputtered titanium/gold/titanium: sputtering is for being electroplated coplanar waveguide transmission line, test electrode and parallel-connection structure MEMS cantilever beam
Down payment, titanium/gold/titanium with a thickness of
3) it deposit silicon nitride dielectric layer: is grown with plasma enhanced CVD method methodSilicon nitride
Dielectric layer；
4) photoetching and etch nitride silicon dielectric layer；Retain the center signal line of CPW below parallel-connection structure MEMS cantilever beam, survey
Try the silicon nitride on electrode transmission line and on test electrode；
5) deposit and photoetching polyimide sacrificial layer: the polyimide sacrificial layer of 1.6 μ m-thicks of deposit, polyimide sacrificial layer
Thickness determine the height between parallel-connection structure MEMS cantilever beam and silicon nitride medium layer, photoetching polyimide sacrificial layer, only
Retain the sacrificial layer under parallel-connection structure MEMS cantilever beam；
6) electroplating gold: plating coplanar waveguide transmission line and parallel-connection structure MEMS cantilever beam, with a thickness of 2 μm；
7) photoresist, releasing sacrificial layer are removed: discharging the polyimide sacrificial layer below cantilever beam structure with developer solution, and
It is dehydrated with dehydrated alcohol, forms the MEMS cantilever beam of parallel-connection structure.
Plasma enhanced chemical vapor deposition method in above method step 2 of the present invention is to utilize aura in settling chamber
Electric discharge makes silicon nitride ionization generate low temperature plasma, the chemical activity of intensified response substance, to carry out being epitaxially formed nitridation
A kind of method of silicon thin film.
Claims (1)
1. a kind of preparation method of the microwave power detection system based on MEMS cantilever beam parallel connection, which is characterized in that the method
Applied to microwave power detection system, include the following steps:
Step 1: prepare gallium arsenide substrate: selection is undoped gallium arsenide substrate；
Step 2: sputtered titanium/gold/titanium；Sputtering is for being electroplated coplanar waveguide transmission line, test electrode and parallel-connection structure MEMS cantilever
The down payment of beam, titanium/gold/titanium with a thickness ofBe made using glow discharge silicon nitride ionization generate low temperature etc. from
Daughter, the chemical activity of intensified response substance, to carry out being epitaxially formed silicon nitride film；
Step 3: deposit silicon nitride dielectric layer: being grown with plasma body reinforced chemical vapor deposition methodSilicon nitride be situated between
Matter layer；
Step 4: photoetching and etch nitride silicon dielectric layer；Retain co-planar waveguide center signal line below parallel-connection structure MEMS cantilever beam
Silicon nitride upper, on test electrode transmission line and on test electrode；
Step 5: depositing simultaneously photoetching polyimide sacrificial layer；Deposit the polyimide sacrificial layer of 1.6 μ m-thicks, polyimide sacrificial layer
Thickness determine the height between parallel-connection structure MEMS cantilever beam and silicon nitride medium layer, photoetching polyimide sacrificial layer, only
Retain the sacrificial layer under parallel-connection structure MEMS cantilever beam；
Step 6: electroplating gold；Coplanar waveguide transmission line and parallel-connection structure MEMS cantilever beam is electroplated, with a thickness of 2 μm；
Step 7: removal photoresist, releasing sacrificial layer；The polyimide sacrificial layer below cantilever beam structure is discharged with developer solution, and
It is dehydrated with dehydrated alcohol, forms the MEMS cantilever beam of parallel-connection structure；
The system comprises gallium arsenide substrate (9), coplanar waveguide transmission line and capacitance microwave power sensor, the arsenic
Be equipped with coplanar waveguide transmission line above gallium substrate (9), the coplanar waveguide transmission line be by co-planar waveguide center signal line (1),
Co-planar waveguide ground wire (5) and air bridges (6) composition；Capacitance microwave power sensor be by cantilever beam (2), test electrode (3),
Test electrode transmission line (7), press welding block one (4) and press welding block two (8) composition；Two cantilever beams (2) in parallel form and are coupled
Structure MEMS cantilever beam；Cantilever beam (2) are equipped with above co-planar waveguide center signal line (1), test electricity is equipped with below cantilever beam (2)
Pole (3), test electrode (3) pass through gold thread connecting test electrode transmission line (7)；Electrode transmission line (7) are tested to connect by gold thread
Press welding block two (8)；Press welding block one (4) passes through gold thread connecting cantilever beam (2)；Air bridges (6) connect ground wire (5) by gold thread；Institute
Test electrode transmission line (7) is stated to draw from the parallel direction of cantilever beam (2)；
The microwave power of the system is held from the port A of co-planar waveguide center signal line (1) to co-planar waveguide center signal line (1)
When mouth B transmission, electrostatic force is generated between cantilever beam (2) and coplanar waveguide transmission line, pulls down cantilever beam (2)；
Spacing between the MEMS cantilever beam structure and test electrode of the parallel connection becomes smaller, and capacitance between the two changes
Become, one-to-one microwave power therewith is obtained by the capacitance that measurement changes；Measure obtained cantilever beam (2) and test electricity
Capacitance between pole (3) is exported by press welding block one (4) and press welding block two (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510084666.4A CN104655921B (en) | 2015-02-16 | 2015-02-16 | Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510084666.4A CN104655921B (en) | 2015-02-16 | 2015-02-16 | Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104655921A CN104655921A (en) | 2015-05-27 |
| CN104655921B true CN104655921B (en) | 2019-01-01 |
Family
ID=53247287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510084666.4A Active CN104655921B (en) | 2015-02-16 | 2015-02-16 | Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104655921B (en) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199173A (en) * | 2016-07-19 | 2016-12-07 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure and method |
| CN106644205B (en) * | 2017-01-12 | 2019-05-31 | 东南大学 | A kind of pressure sensor based on the online microwave power detector structure of MEMS |
| CN106680581B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate cantilever beam coupled T-type knot indirect heating type millimeter-wave signal detecting instrument |
| CN106841796B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The online unknown frequency microwave phase detector device of clamped beam indirect heating |
| CN107064617B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors |
| CN106841799B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
| CN106841793B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | The online given frequency microwave phase detector device of clamped beam indirect heating |
| CN106872767B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam indirect heating type microwave signal detector device |
| CN106771605B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
| CN106771581B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
| CN106802370B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors |
| CN106872780B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating |
| CN106771606A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | The online microwave phase detector device of T-shaped knot slot-coupled |
| CN106802369B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type millimeter-wave signal detecting instrument |
| CN106872796B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula |
| CN106872797B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Clamped beam T junction indirect heating type microwave signal detector device |
| CN106814251B (en) * | 2017-01-24 | 2019-04-30 | 东南大学 | The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors |
| CN106841781B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction |
| CN106841788B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
| CN106841771B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector |
| CN106645923B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
| CN106841794B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction directly heats online given frequency microwave phase detector device |
| CN106814260B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula |
| CN106771602B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
| CN106814259B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Clamped beam direct-heating type microwave signal detector |
| CN106841800B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors |
| CN106814253A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The online microwave phase detector device of gap T-shaped knot |
| CN106841795A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Cantilever beam couples online microwave phase detector device |
| CN106841775B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
| CN106814252A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | Online microwave phase detector device based on clamped beam |
| CN106771607A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | The online microwave phase detector device of clamped beam T-shaped knot |
| CN106841789B (en) * | 2017-01-24 | 2019-04-26 | 东南大学 | Clamped beam directly heats online unknown frequency microwave phase detector device |
| CN106841782B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors |
| CN106841785B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam directly heats online given frequency microwave phase detector device |
| CN106841772B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
| CN106841787B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction directly heats online unknown frequency microwave phase detector device |
| CN106771558B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam direct-heating type microwave signal detector device |
| CN106841790B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector device |
| CN106932636B (en) * | 2017-05-05 | 2023-04-25 | 南京邮电大学 | Capacitive microwave power sensor with three-finger staggered structure |
| CN110579643A (en) * | 2019-09-16 | 2019-12-17 | 南京邮电大学 | Microwave power sensor based on arc-shaped clamped beam |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101414701A (en) * | 2008-11-19 | 2009-04-22 | 东南大学 | Microelectron mechanical socle beam type microwave power coupler and preparation method thereof |
| US7532093B1 (en) * | 2006-02-06 | 2009-05-12 | The United States Of America As Represented By The Secretary Of The Army | RF MEMS series switch using piezoelectric actuation and method of fabrication |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN204666718U (en) * | 2015-02-16 | 2015-09-23 | 南京邮电大学 | Based on the microwave power detection system of MEMS cantilever beam parallel connection |
-
2015
- 2015-02-16 CN CN201510084666.4A patent/CN104655921B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7532093B1 (en) * | 2006-02-06 | 2009-05-12 | The United States Of America As Represented By The Secretary Of The Army | RF MEMS series switch using piezoelectric actuation and method of fabrication |
| CN101414701A (en) * | 2008-11-19 | 2009-04-22 | 东南大学 | Microelectron mechanical socle beam type microwave power coupler and preparation method thereof |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN204666718U (en) * | 2015-02-16 | 2015-09-23 | 南京邮电大学 | Based on the microwave power detection system of MEMS cantilever beam parallel connection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104655921A (en) | 2015-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104655921B (en) | Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection | |
| CN103048540B (en) | Based on online microwave frequency detector and the detection method thereof of semi-girder and direct-type power sensor | |
| CN103116073B (en) | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof | |
| CN103105531B (en) | The online microwave frequency detector of microelectron-mechanical and detection method thereof | |
| CN103048536B (en) | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor | |
| CN103116067B (en) | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors | |
| CN204666718U (en) | Based on the microwave power detection system of MEMS cantilever beam parallel connection | |
| CN104635036A (en) | Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof | |
| CN103364636B (en) | Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector | |
| CN102411086B (en) | Five-port capacitance type microwave power sensor based on micro mechanical clamped beam | |
| CN103116071B (en) | Micro-electromechanical microwave frequency and power detecting system and detecting method thereof | |
| CN106841792B (en) | Online microwave phase detector device and detection method based on cantilever beam | |
| CN103116070A (en) | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors | |
| CN103116072B (en) | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system | |
| CN103076504B (en) | Phase detection device and method of cantilever beam capacitance type micro mechanical microwave power sensor | |
| CN106645920B (en) | Clamped beam T junction indirect heating type microwave signal detector | |
| CN106841782B (en) | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors | |
| CN203310916U (en) | Phase detector based on micromechanical cantilever capacitive power sensor | |
| CN106645922A (en) | Online microwave phase detector for cantilever beam T-junction | |
| CN106814252A (en) | Online microwave phase detector device based on clamped beam | |
| CN106841781B (en) | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction | |
| CN106771603A (en) | The online microwave phase detector device of T-shaped knot cantilever beam | |
| CN108594176A (en) | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar | |
| CN106841797B (en) | Silicon substrate unknown frequency slot-coupled formula T junction direct-type millimeter wave phase detectors | |
| CN106841783B (en) | Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191206 Address after: Room 107, floor 1, No. 30-06, GuangYue Road, Qixia street, Nanjing Economic and Technological Development Zone, Jiangsu Province Patentee after: Nanjing Erxin Electronic Co., Ltd Address before: 210003 Gulou District, Jiangsu, Nanjing new model road, No. 66 Patentee before: Nanjing Post & Telecommunication Univ. |