CN108982963A - A kind of High-precision Microwave power detecting system based on shunt effect - Google Patents
A kind of High-precision Microwave power detecting system based on shunt effect Download PDFInfo
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- CN108982963A CN108982963A CN201810341814.XA CN201810341814A CN108982963A CN 108982963 A CN108982963 A CN 108982963A CN 201810341814 A CN201810341814 A CN 201810341814A CN 108982963 A CN108982963 A CN 108982963A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Present invention discloses a kind of High-precision Microwave power detecting system based on shunt effect, the detection system includes substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the material of the substrate is coplanar waveguide transmission line described in GaAs, fine and close resistance and sensor are all set on substrate, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line, second co-planar waveguide center signal line and ground wire, the two sides of the first co-planar waveguide center signal line and the second co-planar waveguide center signal line are arranged in the ground wire, the sensor is Thermoelectric Microwave Power Sensor, the Thermoelectric Microwave Power Sensor includes thermoelectric pile and two first terminal resistance and second terminal resistance in parallel.High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, but also the precision of detection power can be improved, while have many advantages, such as small in size, structure is simple, convenient for integrating.
Description
Technical field
The present invention relates to a kind of High-precision Microwave power detecting system based on shunt effect, can be used for mems
System technology.
Background technique
The development of microwave technology based on MEMS (MEMS) has become the weight of a national science and technology levels
Indicate.In the research of the links such as signal generation, transmission and the reception of microwave, the measurement of microwave power is essential
Basic test technology.Currently, microwave power detection tool the most most common is the thermoelectricity type micro-wave function based on pyroelectric effect
Rate sensor.But traditional thermoelectric (al) type MEMS microwave power detector is small with measurement microwave signal amplitude, precision is not high
Disadvantage.In recent years, the continuous development with microelectronic technique level and the continuous research to alloy material, so that copper-manganese is caused
The detection that cipher telegram resistance is applied to microwave power is possibly realized.
Summary of the invention
The object of the invention is to propose a kind of based on shunt effect to solve the above-mentioned problems in the prior art
High-precision Microwave power detecting system.
A kind of the purpose of the invention will be achieved through the following technical solutions: High-precision Microwave function based on shunt effect
Rate detection system, including substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the coplanar waveguide transmission line, fine and close electricity
Resistance and sensor are all set on substrate, and the coplanar waveguide transmission line includes the first co-planar waveguide center signal, second coplanar
Waveguide core signal wire and ground wire, the ground wire setting are believed in the first co-planar waveguide center signal line and the second co-planar waveguide center
The two sides of number line.
Preferably, the material of the substrate is GaAs.
Preferably, the sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes
Thermoelectric pile and two first terminal resistance and second terminal resistance in parallel, first terminal resistance and second terminal resistor coupled in parallel are set
It sets in the two sides of the second co-planar waveguide center signal line, it is coplanar that the both ends of the first terminal resistance have been electrically connected second
The second co-planar waveguide center signal has been electrically connected in waveguide core signal wire and ground wire, the both ends of the second terminal resistance
Line and ground wire, the thermoelectric pile and first terminal resistance and second terminal resistive gaps are arranged, and thermoelectric pile setting is whole first
The right side of resistance and second terminal resistance is held, thermoelectric pile has cold and hot end, cold end is provided with voltage output end.
Preferably, the fine and close resistance is arranged in the first co-planar waveguide center signal line and the second co-planar waveguide center signal
The centre of line.
Preferably, the fine and close resistance is using copper-manganese material as material.
Preferably, the two sides of the fine and close resistance are deposited with insulating layer silicon nitride, in the outer outgrowth of insulating layer silicon nitride
There is metal as voltage tester port.
Preferably, the metal is aluminium.
Preferably, microwave signal to be measured is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, microwave signal to be measured
Power is the power that fine and close resistance terminal measures and the sum of the power that thermoelectric pile end measures.
Preferably, microwave signal to be measured can generate direct ratio on center signal line when transmitting on coplanar waveguide transmission line
In the electric current of microwave signal power, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, passes through
The voltage for measuring fine and close resistance output end, can be obtained the size with the one-to-one microwave power of voltage value.
Preferably, the microwave signal not absorbed by fine and close resistance, along the second co-planar waveguide center signal line after resuming
Transport to terminal resistance, terminal resistance absorbs current temperature and increases so that the hot end of the thermoelectric pile around terminal resistance and cold end it
Between generate temperature difference, be based on Seebeck effect, generated in the output end of thermoelectric pile and be proportional to the direct current of microwave signal power
Pressure can be obtained the size with the one-to-one microwave power of voltage value by measuring the voltage of thermoelectric pile output end.
The advantages of technical solution of the present invention, is mainly reflected in:
1, the dynamic range of detectable signal expands, and when microwave signal is weaker, the electric current almost all of generation is by by copper-manganese material
The fine and close resistance of material is absorbed, and obtains the ohmically voltage value, foundation by the voltage detecting circuit right above co-planar waveguide
Proportionate relationship between voltage and power can find out microwave power to be measured, this process does not consume microwave signal substantially, realize
Line measurement.When microwave signal is stronger, Thermoelectric Microwave Power Sensor is based on Seebeck effect to the microwave signal not being lost
It is measured again, to extend the dynamic range of detection signal power.
2, testing result precision improves, based on the detection system of shunt effect in the biggish microwave signal of measurement power,
The output end of fine and close resistance and thermoelectric pile can all have apparent voltage output, this makes when measuring High-Power Microwave signal, single
Detection power under position variation voltage is smaller, to improve detection accuracy well.
3, small using manganin as the inductance of the fine and close resistance of material, temperature drift coefficient is good, has as sampling resistor excellent
Good electrology characteristic.
High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, and
And the precision of detection power can also be improved, while there is many advantages, such as small in size, structure is simple, convenient for integrating.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of High-precision Microwave power detecting system based on shunt effect of the invention.
Fig. 2 is a kind of schematic diagram of High-precision Microwave power detecting system based on shunt effect of the invention.
Specific embodiment
The purpose of the present invention, advantage and feature, by by the non-limitative illustration of preferred embodiment below carry out diagram and
It explains.These embodiments are only the prominent examples using technical solution of the present invention, it is all take equivalent replacement or equivalent transformation and
The technical solution of formation, all falls within the scope of protection of present invention.
Present invention discloses a kind of High-precision Microwave power detecting system based on shunt effect, as shown in Figure 1, including lining
Bottom, coplanar waveguide transmission line, fine and close resistance 1 and sensor, the material of the substrate are GaAs.The coplanar wave guide transmission
Line, fine and close resistance 1 and sensor are all set on substrate, and the coplanar waveguide transmission line includes the first co-planar waveguide center signal
Line 10, the second co-planar waveguide center signal line 20 and ground wire 30, the ground wire 30 are arranged in the first co-planar waveguide center signal line
10 and second co-planar waveguide center signal line 20 two sides.
The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile 2
With two first terminal resistance 3 and second terminal resistance 4 in parallel, first terminal resistance 3 and second terminal resistance 4 are arranged in parallel
In the two sides of the second co-planar waveguide center signal line 20, it is coplanar that the both ends of the first terminal resistance have been electrically connected second
The second co-planar waveguide center has been electrically connected in waveguide core signal wire 20 and ground wire 30, the both ends of the second terminal resistance
Signal wire 20 and ground wire 30, the thermoelectric pile 2 and 4 gap setting of first terminal resistance 3 and second terminal resistance, and thermoelectric pile is set
It sets on the right side of first terminal resistance 3 and second terminal resistance 4, thermoelectric pile has cold and hot end, cold end is provided with voltage
Output end 5.
The densification resistance 1 is arranged in the first co-planar waveguide center signal line 10 and the second co-planar waveguide center signal line 20
Centre, it is described densification resistance 1 using copper-manganese material as material.It is small as the inductance of the fine and close resistance of material using manganin, temperature
It is good to float coefficient, there is excellent electrology characteristic as sampling resistor.In view of microwave signal is easy from fine and close resistance to unofficial biography
It broadcasts, causes the loss of measured signal, cross metal in fine and close resistance two sides deposition insulating layer silicon nitride, and in the two sides of silicon nitride,
As voltage tester end, specifically, the two sides of the densification resistance 1 are deposited with insulating layer silicon nitride 6, in insulating layer silicon nitride 6
Outside be deposited with metal as voltage tester port 7, the metal is aluminium.The insulating layer silicon nitride of fine and close resistance two sides is effective
Ground reduces the loss of microwave signal, further increases the measurement accuracy of system.Compared to silver, copper and gold, metallic aluminium comes
Source is extensive, and has higher conductivity and lower density, and there is fine and close oxide film protection on surface, using it as output electrode
Material while reducing the detection system cost of manufacture, also considerably increase the measuring accuracy of output voltage.
When microwave power is transmitted from coplanar waveguide transmission line, can be generated on center signal line directly proportional to power
Electric current can generate voltage when electric current is transmitted on fine and close resistance according to Ohm's law, survey by peripheral detection circuit to voltage
Examination end is tested to obtain voltage value, can obtain and its one-to-one microwave signal power value.When microwave signal is passed through
After fine and close resistance incoming terminal resistance, terminal resistance absorbs microwave, and temperature increases, due to the Seebeck effect of thermoelectric pile, heat letter
It number is converted into and to be exported with the one-to-one voltage signal of microwave power from test lead, determine heat by peripheral voltage detection circuit
The voltage of pile output end, the size of you can get it microwave power.
As shown in Fig. 2, when microwave power to be measured is smaller, since the electric current of generation is smaller, only on copper-manganese densification resistance
There is voltage generation;And when microwave power to be measured is larger, since the electric current of generation is larger, the test electrode of thermoelectric pile and densification electricity
There is voltage generation in resistance, using this detection mode while extending microwave power signal dynamic detection range, effectively
Improve the detection accuracy for High-Power Microwave signal.
Specifically, microwave signal is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, they is measured to the sum of power
As the actual power of microwave signal to be measured, this had not only extended system for the detection range of microwave signal, but improve for
The detection accuracy of HIGH-POWERED MICROWAVES signal, in the technical scheme, the fine and close resistance terminal of the power of microwave signal to be measured measure
The sum of the power that power and thermoelectric pile end measure.
Microwave signal to be measured can generate on center signal line when transmitting on coplanar waveguide transmission line and be proportional to microwave letter
The electric current of number power, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, and it is fine and close to pass through measurement
The voltage of resistance output end can be obtained the size with the one-to-one microwave power of voltage value.It is not absorbed by fine and close resistance
Microwave signal, continue to be transmitted to terminal resistance along the second co-planar waveguide center signal line 20, terminal resistance absorbs electric current temperature
Degree increases, so that generating temperature difference between the hot end and cold end of the thermoelectric pile around terminal resistance, is based on Seebeck effect,
The output end of thermoelectric pile generates the DC voltage for being proportional to microwave signal power, by measuring the voltage of thermoelectric pile output end, i.e.,
It can get the size with the one-to-one microwave power of voltage value.
When microwave signal is transmitted on CPW center signal line, the electric current directly proportional to microwave signal power can be generated.When
When microwave power signal to be measured is smaller, since the electric current of generation is smaller, electromotive force is generated on only fine and close resistance;When microwave to be measured
When power is larger, since the electric current of generation is larger, the output end of fine and close resistance and thermoelectric pile has electromotive force generation.According to generation
Electromotive force and microwave power be one-to-one relationship, so that it may measure the power of microwave signal.
The detection system is the microwave power detection system that a kind of measuring amplitude range is big, detection accuracy is high, program base
In MEMS technology, there are the principal advantages of MEMS, such as small in size, light-weight, low in energy consumption, and and monolithic integrated microwave circuit
(MMIC) technique is completely compatible, and convenient for integrated, this series of advantages is that traditional microwave power detector is incomparable, therefore
It has research and application value well.
Still there are many embodiment, all technical sides formed using equivalents or equivalent transformation by the present invention
Case is within the scope of the present invention.
Claims (10)
1. a kind of High-precision Microwave power detecting system based on shunt effect, it is characterised in that: passed including substrate, co-planar waveguide
Defeated line, fine and close resistance (1) and sensor, the coplanar waveguide transmission line, fine and close resistance (1) and sensor are all set in substrate
On, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line (10), the second co-planar waveguide center signal line
(20) it is arranged with ground wire (30), the ground wire (30) at the first co-planar waveguide center signal line (10) and the second co-planar waveguide center
The two sides of signal wire (20).
2. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that:
The material of the substrate is GaAs.
3. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that:
The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile (2) and two
First terminal resistance (3) and second terminal resistance (4) in parallel, first terminal resistance (3) and second terminal resistance (4) parallel connection are set
It sets in the two sides of the second co-planar waveguide center signal line (20), the both ends of the first terminal resistance have been electrically connected second
Co-planar waveguide center signal line (20) and ground wire (30), it is coplanar that the both ends of the second terminal resistance have been electrically connected second
Waveguide core signal wire (20) and ground wire (30), the thermoelectric pile (2) and first terminal resistance (3) and second terminal resistance (4)
Gap setting, and thermoelectric pile setting, on the right side of first terminal resistance (3) and second terminal resistance (4), thermoelectric pile has cold end
And hot end, cold end is provided with voltage output end (5).
4. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that:
The densification resistance (1) is arranged in the first co-planar waveguide center signal line (10) and the second co-planar waveguide center signal line (20)
It is intermediate.
5. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 4, it is characterised in that:
The densification resistance (1) is using copper-manganese material as material.
6. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that:
The two sides of the densification resistance (1) are deposited with insulating layer silicon nitride (6), are deposited with metal on the outside of insulating layer silicon nitride (6)
As voltage tester port (7).
7. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 6, it is characterised in that:
The metal is aluminium.
8. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that:
Microwave signal to be measured is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, the power of microwave signal to be measured is fine and close resistance
The sum of the power for holding the power measured and thermoelectric pile end to measure.
9. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 8, it is characterised in that:
Microwave signal to be measured can generate on center signal line when transmitting on coplanar waveguide transmission line and be proportional to microwave signal power
Electric current, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, by measuring fine and close resistance output
The voltage at end can be obtained the size with the one-to-one microwave power of voltage value.
10. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 8, feature exist
In: the microwave signal not absorbed by fine and close resistance continues to be transmitted to terminal along the second co-planar waveguide center signal line (20)
Resistance, terminal resistance absorbs current temperature and increases, so that generating temperature between the hot end and cold end of the thermoelectric pile around terminal resistance
It is poor to spend, and is based on Seebeck effect, and the DC voltage for being proportional to microwave signal power is generated in the output end of thermoelectric pile, passes through survey
The voltage of calorimetric pile output end can be obtained the size with the one-to-one microwave power of voltage value.
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US5508630A (en) * | 1994-09-09 | 1996-04-16 | Board Of Regents, University Of Texas Systems | Probe having a power detector for use with microwave or millimeter wave device |
DE10205359A1 (en) * | 2002-02-08 | 2003-08-21 | Rohde & Schwarz | Power detector with DC decoupling |
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CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
CN208172092U (en) * | 2018-04-17 | 2018-11-30 | 南京邮电大学 | A kind of High-precision Microwave power detecting system based on shunt effect |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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GB8327272D0 (en) * | 1980-10-20 | 1983-11-16 | Philips Electronic Associated | Microwave detector arrangement |
GB8606785D0 (en) * | 1985-05-28 | 1986-04-23 | Marconi Instruments Ltd | Power sensors |
US5508630A (en) * | 1994-09-09 | 1996-04-16 | Board Of Regents, University Of Texas Systems | Probe having a power detector for use with microwave or millimeter wave device |
DE10205359A1 (en) * | 2002-02-08 | 2003-08-21 | Rohde & Schwarz | Power detector with DC decoupling |
CN2725900Y (en) * | 2004-09-27 | 2005-09-14 | 东南大学 | Direct heating terminal type microwave power sensor of microelectronic mechanical system |
CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
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