CN108982963A - A kind of High-precision Microwave power detecting system based on shunt effect - Google Patents

A kind of High-precision Microwave power detecting system based on shunt effect Download PDF

Info

Publication number
CN108982963A
CN108982963A CN201810341814.XA CN201810341814A CN108982963A CN 108982963 A CN108982963 A CN 108982963A CN 201810341814 A CN201810341814 A CN 201810341814A CN 108982963 A CN108982963 A CN 108982963A
Authority
CN
China
Prior art keywords
resistance
microwave power
fine
system based
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810341814.XA
Other languages
Chinese (zh)
Other versions
CN108982963B (en
Inventor
张焕卿
戴瑞萍
陆颢瓒
王德波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Post and Telecommunication University
Original Assignee
Nanjing Post and Telecommunication University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Post and Telecommunication University filed Critical Nanjing Post and Telecommunication University
Priority to CN201810341814.XA priority Critical patent/CN108982963B/en
Publication of CN108982963A publication Critical patent/CN108982963A/en
Application granted granted Critical
Publication of CN108982963B publication Critical patent/CN108982963B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00Arrangements for measuring electric power or power factor
    • G01R21/02Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

Present invention discloses a kind of High-precision Microwave power detecting system based on shunt effect, the detection system includes substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the material of the substrate is coplanar waveguide transmission line described in GaAs, fine and close resistance and sensor are all set on substrate, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line, second co-planar waveguide center signal line and ground wire, the two sides of the first co-planar waveguide center signal line and the second co-planar waveguide center signal line are arranged in the ground wire, the sensor is Thermoelectric Microwave Power Sensor, the Thermoelectric Microwave Power Sensor includes thermoelectric pile and two first terminal resistance and second terminal resistance in parallel.High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, but also the precision of detection power can be improved, while have many advantages, such as small in size, structure is simple, convenient for integrating.

Description

A kind of High-precision Microwave power detecting system based on shunt effect
Technical field
The present invention relates to a kind of High-precision Microwave power detecting system based on shunt effect, can be used for mems System technology.
Background technique
The development of microwave technology based on MEMS (MEMS) has become the weight of a national science and technology levels Indicate.In the research of the links such as signal generation, transmission and the reception of microwave, the measurement of microwave power is essential Basic test technology.Currently, microwave power detection tool the most most common is the thermoelectricity type micro-wave function based on pyroelectric effect Rate sensor.But traditional thermoelectric (al) type MEMS microwave power detector is small with measurement microwave signal amplitude, precision is not high Disadvantage.In recent years, the continuous development with microelectronic technique level and the continuous research to alloy material, so that copper-manganese is caused The detection that cipher telegram resistance is applied to microwave power is possibly realized.
Summary of the invention
The object of the invention is to propose a kind of based on shunt effect to solve the above-mentioned problems in the prior art High-precision Microwave power detecting system.
A kind of the purpose of the invention will be achieved through the following technical solutions: High-precision Microwave function based on shunt effect Rate detection system, including substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the coplanar waveguide transmission line, fine and close electricity Resistance and sensor are all set on substrate, and the coplanar waveguide transmission line includes the first co-planar waveguide center signal, second coplanar Waveguide core signal wire and ground wire, the ground wire setting are believed in the first co-planar waveguide center signal line and the second co-planar waveguide center The two sides of number line.
Preferably, the material of the substrate is GaAs.
Preferably, the sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes Thermoelectric pile and two first terminal resistance and second terminal resistance in parallel, first terminal resistance and second terminal resistor coupled in parallel are set It sets in the two sides of the second co-planar waveguide center signal line, it is coplanar that the both ends of the first terminal resistance have been electrically connected second The second co-planar waveguide center signal has been electrically connected in waveguide core signal wire and ground wire, the both ends of the second terminal resistance Line and ground wire, the thermoelectric pile and first terminal resistance and second terminal resistive gaps are arranged, and thermoelectric pile setting is whole first The right side of resistance and second terminal resistance is held, thermoelectric pile has cold and hot end, cold end is provided with voltage output end.
Preferably, the fine and close resistance is arranged in the first co-planar waveguide center signal line and the second co-planar waveguide center signal The centre of line.
Preferably, the fine and close resistance is using copper-manganese material as material.
Preferably, the two sides of the fine and close resistance are deposited with insulating layer silicon nitride, in the outer outgrowth of insulating layer silicon nitride There is metal as voltage tester port.
Preferably, the metal is aluminium.
Preferably, microwave signal to be measured is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, microwave signal to be measured Power is the power that fine and close resistance terminal measures and the sum of the power that thermoelectric pile end measures.
Preferably, microwave signal to be measured can generate direct ratio on center signal line when transmitting on coplanar waveguide transmission line In the electric current of microwave signal power, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, passes through The voltage for measuring fine and close resistance output end, can be obtained the size with the one-to-one microwave power of voltage value.
Preferably, the microwave signal not absorbed by fine and close resistance, along the second co-planar waveguide center signal line after resuming Transport to terminal resistance, terminal resistance absorbs current temperature and increases so that the hot end of the thermoelectric pile around terminal resistance and cold end it Between generate temperature difference, be based on Seebeck effect, generated in the output end of thermoelectric pile and be proportional to the direct current of microwave signal power Pressure can be obtained the size with the one-to-one microwave power of voltage value by measuring the voltage of thermoelectric pile output end.
The advantages of technical solution of the present invention, is mainly reflected in:
1, the dynamic range of detectable signal expands, and when microwave signal is weaker, the electric current almost all of generation is by by copper-manganese material The fine and close resistance of material is absorbed, and obtains the ohmically voltage value, foundation by the voltage detecting circuit right above co-planar waveguide Proportionate relationship between voltage and power can find out microwave power to be measured, this process does not consume microwave signal substantially, realize Line measurement.When microwave signal is stronger, Thermoelectric Microwave Power Sensor is based on Seebeck effect to the microwave signal not being lost It is measured again, to extend the dynamic range of detection signal power.
2, testing result precision improves, based on the detection system of shunt effect in the biggish microwave signal of measurement power, The output end of fine and close resistance and thermoelectric pile can all have apparent voltage output, this makes when measuring High-Power Microwave signal, single Detection power under position variation voltage is smaller, to improve detection accuracy well.
3, small using manganin as the inductance of the fine and close resistance of material, temperature drift coefficient is good, has as sampling resistor excellent Good electrology characteristic.
High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, and And the precision of detection power can also be improved, while there is many advantages, such as small in size, structure is simple, convenient for integrating.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of High-precision Microwave power detecting system based on shunt effect of the invention.
Fig. 2 is a kind of schematic diagram of High-precision Microwave power detecting system based on shunt effect of the invention.
Specific embodiment
The purpose of the present invention, advantage and feature, by by the non-limitative illustration of preferred embodiment below carry out diagram and It explains.These embodiments are only the prominent examples using technical solution of the present invention, it is all take equivalent replacement or equivalent transformation and The technical solution of formation, all falls within the scope of protection of present invention.
Present invention discloses a kind of High-precision Microwave power detecting system based on shunt effect, as shown in Figure 1, including lining Bottom, coplanar waveguide transmission line, fine and close resistance 1 and sensor, the material of the substrate are GaAs.The coplanar wave guide transmission Line, fine and close resistance 1 and sensor are all set on substrate, and the coplanar waveguide transmission line includes the first co-planar waveguide center signal Line 10, the second co-planar waveguide center signal line 20 and ground wire 30, the ground wire 30 are arranged in the first co-planar waveguide center signal line 10 and second co-planar waveguide center signal line 20 two sides.
The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile 2 With two first terminal resistance 3 and second terminal resistance 4 in parallel, first terminal resistance 3 and second terminal resistance 4 are arranged in parallel In the two sides of the second co-planar waveguide center signal line 20, it is coplanar that the both ends of the first terminal resistance have been electrically connected second The second co-planar waveguide center has been electrically connected in waveguide core signal wire 20 and ground wire 30, the both ends of the second terminal resistance Signal wire 20 and ground wire 30, the thermoelectric pile 2 and 4 gap setting of first terminal resistance 3 and second terminal resistance, and thermoelectric pile is set It sets on the right side of first terminal resistance 3 and second terminal resistance 4, thermoelectric pile has cold and hot end, cold end is provided with voltage Output end 5.
The densification resistance 1 is arranged in the first co-planar waveguide center signal line 10 and the second co-planar waveguide center signal line 20 Centre, it is described densification resistance 1 using copper-manganese material as material.It is small as the inductance of the fine and close resistance of material using manganin, temperature It is good to float coefficient, there is excellent electrology characteristic as sampling resistor.In view of microwave signal is easy from fine and close resistance to unofficial biography It broadcasts, causes the loss of measured signal, cross metal in fine and close resistance two sides deposition insulating layer silicon nitride, and in the two sides of silicon nitride, As voltage tester end, specifically, the two sides of the densification resistance 1 are deposited with insulating layer silicon nitride 6, in insulating layer silicon nitride 6 Outside be deposited with metal as voltage tester port 7, the metal is aluminium.The insulating layer silicon nitride of fine and close resistance two sides is effective Ground reduces the loss of microwave signal, further increases the measurement accuracy of system.Compared to silver, copper and gold, metallic aluminium comes Source is extensive, and has higher conductivity and lower density, and there is fine and close oxide film protection on surface, using it as output electrode Material while reducing the detection system cost of manufacture, also considerably increase the measuring accuracy of output voltage.
When microwave power is transmitted from coplanar waveguide transmission line, can be generated on center signal line directly proportional to power Electric current can generate voltage when electric current is transmitted on fine and close resistance according to Ohm's law, survey by peripheral detection circuit to voltage Examination end is tested to obtain voltage value, can obtain and its one-to-one microwave signal power value.When microwave signal is passed through After fine and close resistance incoming terminal resistance, terminal resistance absorbs microwave, and temperature increases, due to the Seebeck effect of thermoelectric pile, heat letter It number is converted into and to be exported with the one-to-one voltage signal of microwave power from test lead, determine heat by peripheral voltage detection circuit The voltage of pile output end, the size of you can get it microwave power.
As shown in Fig. 2, when microwave power to be measured is smaller, since the electric current of generation is smaller, only on copper-manganese densification resistance There is voltage generation;And when microwave power to be measured is larger, since the electric current of generation is larger, the test electrode of thermoelectric pile and densification electricity There is voltage generation in resistance, using this detection mode while extending microwave power signal dynamic detection range, effectively Improve the detection accuracy for High-Power Microwave signal.
Specifically, microwave signal is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, they is measured to the sum of power As the actual power of microwave signal to be measured, this had not only extended system for the detection range of microwave signal, but improve for The detection accuracy of HIGH-POWERED MICROWAVES signal, in the technical scheme, the fine and close resistance terminal of the power of microwave signal to be measured measure The sum of the power that power and thermoelectric pile end measure.
Microwave signal to be measured can generate on center signal line when transmitting on coplanar waveguide transmission line and be proportional to microwave letter The electric current of number power, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, and it is fine and close to pass through measurement The voltage of resistance output end can be obtained the size with the one-to-one microwave power of voltage value.It is not absorbed by fine and close resistance Microwave signal, continue to be transmitted to terminal resistance along the second co-planar waveguide center signal line 20, terminal resistance absorbs electric current temperature Degree increases, so that generating temperature difference between the hot end and cold end of the thermoelectric pile around terminal resistance, is based on Seebeck effect, The output end of thermoelectric pile generates the DC voltage for being proportional to microwave signal power, by measuring the voltage of thermoelectric pile output end, i.e., It can get the size with the one-to-one microwave power of voltage value.
When microwave signal is transmitted on CPW center signal line, the electric current directly proportional to microwave signal power can be generated.When When microwave power signal to be measured is smaller, since the electric current of generation is smaller, electromotive force is generated on only fine and close resistance;When microwave to be measured When power is larger, since the electric current of generation is larger, the output end of fine and close resistance and thermoelectric pile has electromotive force generation.According to generation Electromotive force and microwave power be one-to-one relationship, so that it may measure the power of microwave signal.
The detection system is the microwave power detection system that a kind of measuring amplitude range is big, detection accuracy is high, program base In MEMS technology, there are the principal advantages of MEMS, such as small in size, light-weight, low in energy consumption, and and monolithic integrated microwave circuit (MMIC) technique is completely compatible, and convenient for integrated, this series of advantages is that traditional microwave power detector is incomparable, therefore It has research and application value well.
Still there are many embodiment, all technical sides formed using equivalents or equivalent transformation by the present invention Case is within the scope of the present invention.

Claims (10)

1. a kind of High-precision Microwave power detecting system based on shunt effect, it is characterised in that: passed including substrate, co-planar waveguide Defeated line, fine and close resistance (1) and sensor, the coplanar waveguide transmission line, fine and close resistance (1) and sensor are all set in substrate On, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line (10), the second co-planar waveguide center signal line (20) it is arranged with ground wire (30), the ground wire (30) at the first co-planar waveguide center signal line (10) and the second co-planar waveguide center The two sides of signal wire (20).
2. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that: The material of the substrate is GaAs.
3. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that: The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile (2) and two First terminal resistance (3) and second terminal resistance (4) in parallel, first terminal resistance (3) and second terminal resistance (4) parallel connection are set It sets in the two sides of the second co-planar waveguide center signal line (20), the both ends of the first terminal resistance have been electrically connected second Co-planar waveguide center signal line (20) and ground wire (30), it is coplanar that the both ends of the second terminal resistance have been electrically connected second Waveguide core signal wire (20) and ground wire (30), the thermoelectric pile (2) and first terminal resistance (3) and second terminal resistance (4) Gap setting, and thermoelectric pile setting, on the right side of first terminal resistance (3) and second terminal resistance (4), thermoelectric pile has cold end And hot end, cold end is provided with voltage output end (5).
4. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that: The densification resistance (1) is arranged in the first co-planar waveguide center signal line (10) and the second co-planar waveguide center signal line (20) It is intermediate.
5. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 4, it is characterised in that: The densification resistance (1) is using copper-manganese material as material.
6. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that: The two sides of the densification resistance (1) are deposited with insulating layer silicon nitride (6), are deposited with metal on the outside of insulating layer silicon nitride (6) As voltage tester port (7).
7. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 6, it is characterised in that: The metal is aluminium.
8. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that: Microwave signal to be measured is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, the power of microwave signal to be measured is fine and close resistance The sum of the power for holding the power measured and thermoelectric pile end to measure.
9. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 8, it is characterised in that: Microwave signal to be measured can generate on center signal line when transmitting on coplanar waveguide transmission line and be proportional to microwave signal power Electric current, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, by measuring fine and close resistance output The voltage at end can be obtained the size with the one-to-one microwave power of voltage value.
10. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 8, feature exist In: the microwave signal not absorbed by fine and close resistance continues to be transmitted to terminal along the second co-planar waveguide center signal line (20) Resistance, terminal resistance absorbs current temperature and increases, so that generating temperature between the hot end and cold end of the thermoelectric pile around terminal resistance It is poor to spend, and is based on Seebeck effect, and the DC voltage for being proportional to microwave signal power is generated in the output end of thermoelectric pile, passes through survey The voltage of calorimetric pile output end can be obtained the size with the one-to-one microwave power of voltage value.
CN201810341814.XA 2018-04-17 2018-04-17 High-precision microwave power detection system based on shunt effect Active CN108982963B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810341814.XA CN108982963B (en) 2018-04-17 2018-04-17 High-precision microwave power detection system based on shunt effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810341814.XA CN108982963B (en) 2018-04-17 2018-04-17 High-precision microwave power detection system based on shunt effect

Publications (2)

Publication Number Publication Date
CN108982963A true CN108982963A (en) 2018-12-11
CN108982963B CN108982963B (en) 2023-07-07

Family

ID=64541855

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810341814.XA Active CN108982963B (en) 2018-04-17 2018-04-17 High-precision microwave power detection system based on shunt effect

Country Status (1)

Country Link
CN (1) CN108982963B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8327272D0 (en) * 1980-10-20 1983-11-16 Philips Electronic Associated Microwave detector arrangement
GB8606785D0 (en) * 1985-05-28 1986-04-23 Marconi Instruments Ltd Power sensors
US5508630A (en) * 1994-09-09 1996-04-16 Board Of Regents, University Of Texas Systems Probe having a power detector for use with microwave or millimeter wave device
DE10205359A1 (en) * 2002-02-08 2003-08-21 Rohde & Schwarz Power detector with DC decoupling
CN2725900Y (en) * 2004-09-27 2005-09-14 东南大学 Direct heating terminal type microwave power sensor of microelectronic mechanical system
CN103777066A (en) * 2014-01-03 2014-05-07 南京邮电大学 Microelectronic mechanical dual channel microwave power detection system and preparation method thereof
CN208172092U (en) * 2018-04-17 2018-11-30 南京邮电大学 A kind of High-precision Microwave power detecting system based on shunt effect

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8327272D0 (en) * 1980-10-20 1983-11-16 Philips Electronic Associated Microwave detector arrangement
GB8606785D0 (en) * 1985-05-28 1986-04-23 Marconi Instruments Ltd Power sensors
US5508630A (en) * 1994-09-09 1996-04-16 Board Of Regents, University Of Texas Systems Probe having a power detector for use with microwave or millimeter wave device
DE10205359A1 (en) * 2002-02-08 2003-08-21 Rohde & Schwarz Power detector with DC decoupling
CN2725900Y (en) * 2004-09-27 2005-09-14 东南大学 Direct heating terminal type microwave power sensor of microelectronic mechanical system
CN103777066A (en) * 2014-01-03 2014-05-07 南京邮电大学 Microelectronic mechanical dual channel microwave power detection system and preparation method thereof
CN208172092U (en) * 2018-04-17 2018-11-30 南京邮电大学 A kind of High-precision Microwave power detecting system based on shunt effect

Also Published As

Publication number Publication date
CN108982963B (en) 2023-07-07

Similar Documents

Publication Publication Date Title
CN208172092U (en) A kind of High-precision Microwave power detecting system based on shunt effect
CN100510759C (en) Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor
Milanovic et al. Thermoelectric power sensor for microwave applications by commercial CMOS fabrication
CN105675160A (en) Tungsten-rhenium film thermocouple sensor containing high temperature protection film group and preparation method
Wang et al. A thermoelectric power sensor and its package based on MEMS technology
WO2020134327A1 (en) Terahertz detector and manufacturing method therefor
CN100498348C (en) Two-end heated microwave power sensor
McGrath et al. Variable-temperature loads for use in accurate noise measurements of cryogenically-cooled microwave amplifiers and mixers
CN100472216C (en) Microelectromechanical microwave powersensor with two balanced thermopiles and its prepn process
CN102507036A (en) MMW (millimeter wave) power sensor and calorimeter provided with same
CN110530927A (en) A kind of thermoelectric material Seebeck coefficient test device and method
US11879786B1 (en) Heat flux sensor
CN108982963A (en) A kind of High-precision Microwave power detecting system based on shunt effect
CN106199173A (en) High-precision Microwave power detecting system based on cantilever beam cascade structure and method
CN209486178U (en) A kind of power sensor of high conversion efficiency of thermoelectric
CN108594006A (en) Microwave power detector based on Hall effect
Kodato et al. New structure for DC-65 GHz thermal power sensor
CN115712014A (en) Weak current sensing device based on snakelike grain core current-carrying polar plate structure
CN113155281B (en) Metal resistance detector and nuclear fusion plasma physical research device
Kodato et al. New structure for DC-60 GHz thermal power sensor
Fujiki New thin-film multijunction thermal converter design for improved high-frequency performance
US2844791A (en) Micro wave power measuring instrument
CN102411088B (en) Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof
CN106645923A (en) Silicon based gap coupling type indirect type millimeter wave signal detection device
CN106841782B (en) Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant