CN108594007B - Microwave power sensor based on piezoresistive effect of clamped beam - Google Patents
Microwave power sensor based on piezoresistive effect of clamped beam Download PDFInfo
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- CN108594007B CN108594007B CN201810420335.7A CN201810420335A CN108594007B CN 108594007 B CN108594007 B CN 108594007B CN 201810420335 A CN201810420335 A CN 201810420335A CN 108594007 B CN108594007 B CN 108594007B
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R21/10—Arrangements for measuring electric power or power factor by using square-law characteristics of circuit elements, e.g. diodes, to measure power absorbed by loads of known impedance
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Abstract
The invention relates to a microwave power sensor based on a clamped beam piezoresistive effect, which comprises a high-resistance silicon substrate, wherein a coplanar waveguide transmission line and a clamped beam are arranged on the high-resistance silicon substrate, the coplanar waveguide transmission line comprises a CPW signal line and a CPW ground line, clamped beam piers are respectively arranged between the CPW ground line and the CPW signal line, two ends of the clamped beam are respectively fixed above the CPW signal line through the clamped beam piers, two ends of the clamped beam are connected with the high-resistance silicon substrate through the clamped beam piers, metal mass blocks are arranged on the upper surfaces of the clamped beam and the upper surfaces of the clamped beam, diffusion resistors are respectively arranged on the upper surfaces and the lower surfaces of the clamped beam, the clamped beam surface stress changes due to the deformation of the clamped beam when the microwave power sensor works, the value of the diffusion resistors changes, and the microwave power value can be directly measured by measuring the voltage change between nodes through a Huygens bridge method. The microwave power sensor has novel structure, easy integration, wider measurement range and higher measurement precision.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a microwave power sensor based on a piezoresistive effect of a clamped beam.
Background
In the study of radio frequency micro-electromechanical systems (RF MEMS), power is an important parameter for characterizing microwave signals. For the detection of microwave power applied to links such as generation, transmission and reception of microwave signals, the most common microwave signal power sensor is a capacitive microwave power sensor based on a clamped beam structure, such as an MEMS clamped beam type online microwave power sensor and a preparation method thereof (patent number: 201010223810.5), and a microwave detection system based on clamped beams and a direct type power sensor and a detection method thereof (patent number: 201310027303.8). The working principle of the microwave power sensor is as follows: when the microwave signal passes through the coplanar waveguide, electrostatic force is generated between the coplanar waveguide and the clamped beam, so that the clamped beam is pulled down, and the capacitance value between the test electrode and the clamped beam is changed, thereby realizing the detection of microwave power. However, the output of the capacitive microwave power sensor has nonlinearity, and the parasitic capacitance and the distributed capacitance of the capacitive microwave power sensor have the defects of larger influence on sensitivity and measurement precision, more complex connection circuit, smaller pull-down amplitude of the clamped beam and the like.
Disclosure of Invention
In order to solve the problems, the invention provides the microwave power sensor based on the piezoresistive effect of the clamped beam, which can effectively solve the problems and effectively improve the sensitivity.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
the invention relates to a microwave power sensor based on a clamped beam piezoresistive effect, which comprises a high-resistance silicon substrate, wherein a coplanar waveguide transmission line and a clamped beam are arranged on the high-resistance silicon substrate, the coplanar waveguide transmission line comprises a CPW signal line and a CPW ground wire, CPW ground wires are respectively arranged on two sides of the CPW signal line, clamped beam bridge piers are respectively arranged between the CPW ground wire and the CPW signal line, two ends of the clamped beam are respectively fixed above the CPW signal line through the clamped beam piers, two ends of the clamped beam are connected with the high-resistance silicon substrate through the clamped beam piers, a metal mass block is arranged on the upper surface of the clamped beam and the upper surface and the lower surface of the clamped beam respectively, diffusion resistors are arranged on the upper surface and the lower surface of the clamped beam, the clamped beam deforms to cause the surface stress change of the clamped beam, the value of the diffusion resistors is changed, and the voltage change between nodes can be measured directly through a Huygens bridge method.
The invention further improves that: the diffusion resistor comprises a diffusion resistor R1, a diffusion resistor R2, a diffusion resistor R3, a diffusion resistor R4, a diffusion resistor R1', a diffusion resistor R2', a diffusion resistor R3 'and a diffusion resistor R4', wherein the diffusion resistor R1 and the diffusion resistor R2 are arranged on the upper surface of the clamped beam and on one side of the metal mass block, the diffusion resistor R1 'and the diffusion resistor R2' are arranged on the upper surface of the clamped beam and on the other side of the metal mass block, the diffusion resistor R3 and the diffusion resistor R4 are arranged on the lower surface of the clamped beam and on one side of the metal mass block, and the diffusion resistor R3 'and the diffusion resistor R4' are arranged on the lower surface of the clamped beam and on the other side of the metal mass block.
The invention further improves that: the diffusion resistor R1, the diffusion resistor R2, the diffusion resistor R3 and the diffusion resistor R4 are electrically connected to form a Huygens bridge, and the diffusion resistor R1', the diffusion resistor R2', the diffusion resistor R3 'and the diffusion resistor R4' are electrically connected to form the Huygens bridge.
The invention further improves that: the clamped beam bridge pier is in direct contact with the high-resistance silicon substrate, and the clamped beam bridge pier is in direct contact with the clamped beam.
The invention further improves that: the metal mass is made of copper, nickel or aluminum.
The invention further improves that: the metal mass block is in direct contact with the clamped beam.
The invention further improves that: the clamped beam is made of lightly doped monocrystalline silicon or monocrystalline germanium.
The invention further improves that: the clamped beam bridge pier is made of copper.
The beneficial effects of the invention are as follows: (1) The invention adopts a clamped beam structure, has higher stability, higher yield and better environmental adaptability, and is easy to realize through micro-machining; (2) The invention adopts the clamped beam as a mechanical structure, and the mechanical characteristics of the clamped beam can provide four resistance conditions required by the differential bridge; (3) The piezoresistance effect of the semiconductor material is utilized, the resistors on the clamped beam are driven by the external constant current source, a differential bridge is formed between the resistors, and the sensor precision is higher by bridge detection; (4) According to the invention, the metal mass blocks with higher density are arranged on the clamped beam right above the signal line, so that the displacement amplitude of the clamped beam is increased, and the measurement accuracy is increased.
The invention is based on MEMS technology, has the basic advantages of MEMS, small volume, light weight, low power consumption, convenient integration, etc., and the series of advantages are incomparable with the traditional microwave power detector, so the invention has good research and application value, when microwave power is transmitted from the coplanar waveguide, the metal mass block drives the clamped beam to pull down due to electrostatic force, the stress on the beam surface is changed, the resistivity of the diffusion resistance on the clamped beam is changed, the external constant current source drives the diffusion resistance, the potential difference corresponding to the microwave power one by one is generated on the resistance, and the detection of the microwave power is carried out by detecting the potential difference.
The microwave power sensor provided by the invention has the advantages of novel structure, easiness in integration, wider measurement range and higher measurement precision.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic diagram of a diffusion resistance arrangement of the present invention.
FIG. 3 is a schematic diagram of a Huygens bridge circuit of the present invention.
Wherein: 1-a high-resistance silicon substrate; 2-CPW ground wire; a 3-CPW signal line; 4-clamped beam bridge pier; 5-clamped beams; 6-diffusion resistance; 7-metal mass block.
Detailed Description
The present invention will be further described in detail with reference to the drawings and examples, which are only for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1-3, the invention is a microwave power sensor based on the piezoresistive effect of a clamped beam, the sensor comprises a high-resistance silicon substrate 1, a coplanar waveguide transmission line and a clamped beam 5 are arranged on the high-resistance silicon substrate 1, the clamped beam 5 is a clamped beam made of lightly doped monocrystalline silicon or monocrystalline germanium, the coplanar waveguide transmission line comprises a CPW signal line 3 and a CPW ground line 2, the CPW ground line 2 is respectively arranged at two sides of the CPW signal line 3, clamped beam bridge piers 4 are respectively arranged between the CPW ground line 2 and the CPW signal line 3, the clamped beam piers 4 are clamped beam piers made of copper, two ends of the clamped beam 5 are respectively fixed above the CPW signal line 3 through the clamped beam piers 4, two ends of the clamped beam 5 are connected with the high-resistance silicon substrate 1 through the clamped beam piers 4, the clamped beam piers 4 are in direct contact with the high-resistance silicon substrate 1, the clamped beam bridge pier 4 is in direct contact with the clamped beam 5, a metal mass block 7 is arranged right above the CPW signal wire 3 and on the upper surface of the clamped beam 5, a metal mass block is arranged above the clamped beam, the sensor generates electrostatic force to pull the mass block when in operation so as to drive the clamped beam to deform, the surface of the clamped beam generates stress change, meanwhile, the mass block can enlarge the deformation amplitude, when a microwave signal passes through the central signal wire, a certain amount of electrostatic force is generated, the metal mass block is driven by the electrostatic force to pull down the clamped beam, the stress on the surface of the clamped beam is changed, the metal mass block 7 is made of copper, nickel or aluminum, the metal mass block 7 is in direct contact with the clamped beam 5, the upper surface and the lower surface of the clamped beam 5 are both provided with diffusion resistors 6, the microwave power sensor is characterized in that when the microwave power sensor works, deformation of the clamped beam 5 causes surface stress change of the clamped beam 5, the value of the diffusion resistance changes, the microwave power value can be directly measured by measuring voltage change between the nodes 2 and 4 through a Huygens bridge method, the diffusion resistance 6 comprises a diffusion resistance R1, a diffusion resistance R2, a diffusion resistance R3, a diffusion resistance R4, a diffusion resistance R1', a diffusion resistance R2', a diffusion resistance R3 'and a diffusion resistance R4', the upper surface of the clamped beam 5 and one side of the metal mass block 7 are the diffusion resistance R1 and the diffusion resistance R2, the upper surface of the clamped beam 5 and the other side of the metal mass block 7 are the diffusion resistance R1 'and the diffusion resistance R2', the lower surface of the clamped beam 5 and one side of the metal mass block 7 are the diffusion resistance R3 and the diffusion resistance R4, the diffusion resistance R1, the diffusion resistance R2, the diffusion resistance R3 and the diffusion resistance R4 are connected with each other side of the clamped beam through the bridge, namely, the clamped beam and the bridge is connected with one side of the bridge 4 through the diffusion bridge and the other side of the bridge 4, and the bridge is formed by the diffusion bridge and the diffusion resistance R3 and the diffusion resistance R4.
Taking a side resistor as an example, a Huygens bridge is formed by a diffusion resistor R1, a diffusion resistor R2, a diffusion resistor R3 and a diffusion resistor R4, a node 1 and a node 3 are driven by an external constant current source I1, a node 2 and a node 4 are output signals Uout, and the output signals Uout are connected with an external AD converter for detection by the external AD converter.
When the signal line passes through the microwave signal, a certain electrostatic force is generated on the mass block, the mass block drives the clamped beam to deform, the stress on the surface of the clamped beam changes, and the stress on the diffusion resistor R1, the diffusion resistor R2, the diffusion resistor R3 and the diffusion resistor R4 are shown in the table 1 by taking four diffusion resistors on one side of the clamped beam as an example:
TABLE 1 diffusion resistance stress variation of a clamped beam drop-down single-sided clamped beam
| R1 | R2 | R3 | R4 | |
| Pull-up | Compression | Stretching | Stretching | Compression |
| Pull-down | Stretching | Compression | Compression | Stretching |
The four resistors have the same resistance variable when the clamped beam is changed, so that the change of the resistance is measured through the Huygens bridge shown in fig. 3, the bridge is driven by an external constant current source, meanwhile, the microwave power can be measured by measuring the voltage between nodes through an external AD conversion module, the node voltage microwave power is in one-to-one correspondence, and therefore the microwave power can be deduced.
When the sensor works, the central signal wire generates certain electric field force, the metal mass block is driven to deform by the action of the electric field force, stress change is generated on the surface of the clamped beam, voltage is generated between two nodes of the differential bridge circuit, the voltage corresponds to microwave power one by one, and the power is detected by detecting the voltage.
Claims (6)
1. The utility model provides a microwave power sensor based on clamped beam piezoresistive effect, the sensor includes high resistance silicon substrate (1) be provided with coplanar waveguide transmission line, clamped beam (5), its characterized in that on high resistance silicon substrate (1): the coplanar waveguide transmission line comprises a CPW signal line (3) and a CPW ground wire (2), wherein CPW ground wires (2) are respectively arranged on two sides of the CPW signal line (3), a clamped beam pier (4) is respectively arranged between the CPW ground wire (2) and the CPW signal line (3), two ends of the clamped beam (5) are respectively fixed above the CPW signal line (3) through the clamped beam pier (4), two ends of the clamped beam (5) are connected with a high-resistance silicon substrate (1) through the clamped beam pier (4), a metal mass block (7) is arranged on the upper surface of the clamped beam (5) directly above the CPW signal line (3), a diffusion resistance (6) is respectively arranged on the upper surface and lower surface of the clamped beam (5), the surface stress of the clamped beam (5) is changed when a microwave power sensor works, a diffusion resistance (6) is changed, a diffusion resistance value (R ' is measured by a Wheater bridge, a diffusion power value (R2 ', a diffusion resistance R2 and a diffusion resistance R2' are measured, and a diffusion resistance R2' are measured by the surface-to measure the diffusion resistance R2', and the diffusion resistance R2' is measured by the surface-resistance R2' measured by a Wheatdown method The other side of the metal mass block (7) is provided with a diffusion resistor R1 'and a diffusion resistor R2', the lower surface of the clamped beam (5) and one side of the metal mass block (7) are provided with a diffusion resistor R3 and a diffusion resistor R4, the lower surface of the clamped beam (5) and the other side of the metal mass block (7) are provided with a diffusion resistor R3 'and a diffusion resistor R4', the clamped beam bridge pier (4) is in direct contact with the high-resistance silicon substrate (1), and the clamped beam bridge pier (4) is in direct contact with the clamped beam (5).
2. The microwave power sensor based on the piezoresistive effect of the clamped beams according to claim 1, wherein: the diffusion resistor R1, the diffusion resistor R2, the diffusion resistor R3 and the diffusion resistor R4 are electrically connected to form a Huygens bridge, and the diffusion resistor R1', the diffusion resistor R2', the diffusion resistor R3 'and the diffusion resistor R4' are electrically connected to form the Huygens bridge.
3. The microwave power sensor based on the piezoresistive effect of the clamped beams according to claim 1, wherein: the metal mass block (7) is made of copper, nickel or aluminum.
4. The microwave power sensor based on the piezoresistive effect of the clamped beams according to claim 1, wherein: the metal mass block (7) is in direct contact with the clamped beam (5).
5. The microwave power sensor based on the piezoresistive effect of the clamped beams according to claim 1, wherein: the clamped beam (5) is made of lightly doped monocrystalline silicon or monocrystalline germanium.
6. The microwave power sensor based on the piezoresistive effect of the clamped beams according to claim 1, wherein: the clamped beam bridge pier (4) is made of copper.
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| CN109917182B (en) * | 2019-03-27 | 2021-03-16 | 南京邮电大学 | Microwave power sensor based on graphene piezoresistive effect |
| CN109932561B (en) * | 2019-03-27 | 2021-02-12 | 南京邮电大学 | Microwave power sensor based on composite arched beam |
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