CN105762164B - Multilayered structure pixel and imaging sensor based on export-oriented S type conducting wire - Google Patents
Multilayered structure pixel and imaging sensor based on export-oriented S type conducting wire Download PDFInfo
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- CN105762164B CN105762164B CN201610294321.6A CN201610294321A CN105762164B CN 105762164 B CN105762164 B CN 105762164B CN 201610294321 A CN201610294321 A CN 201610294321A CN 105762164 B CN105762164 B CN 105762164B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000001788 irregular Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002103 nanocoating Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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Abstract
The present invention relates to image sensor technologies fields, and in particular to multilayered structure pixel, pixel array and imaging sensor based on export-oriented S type conducting wire；Wherein, multilayered structure pixel, including substrate, microbridge, microbridge include the first layer bridge pier for being used to support microbridge, bridge floor and second layer bridge pier on setting bridge pier, wherein are routed between the double-deck bridge pier using S type, and are located at adjacent picture elements bottom outside；There is a photosensitive layer on bridge deck surfaces, to electromagnetic wave absorption, photosensitive layer upper surface includes an insulating layer, and photosensitive layer surface is equipped with several hollow three-dimensional structures；The present invention is coated with the hollow three-dimensional structure and S type conducting wire peripheral hardware of the new materials such as graphene by several surfaces, not only reduce distortion of the signal in transmission process, and in the case where space remains unchanged, increase receiving area, improve receiving sensitivity, for conventional pixel, 30% or more is effectively promoted；And present invention process is simple, is suitable for large-scale production.
Description
Technical field
The present invention relates to image sensor technologies fields, and in particular to a kind of multilayered structure picture based on export-oriented S type conducting wire
Member and imaging sensor.
Background technique
It seems to increase the imaging sensor of picture using dislocation applied to the new technology of next-generation imaging sensor that dislocation, which increases, can
It is widely used in the frequency spectrums such as near-infrared, visible light, ultraviolet, X-ray, microwave, THZ, far infrared, Core Superiority is in phase jljl
Under the premise of managing space, identical pixel dimension, resolution ratio is significantly promoted.
In the prior art, bad (thickness, the uniformity) or MEMS machining accuracy of material coating are bad, can all cause to refer to
Mark decline.
Therefore, if in this technical foundation, increase completely new stereochemical structure, so that it may increase absorption area, coat simultaneously
New material facilitates the receiving intensity for increasing photosignal, improves receiving sensitivity.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides multilayered structure pixels and image biography based on export-oriented S type conducting wire
Sensor by S type conducting wire peripheral hardware between the double-deck bridge pier, and increases several surfaces on the basis of existing photosensitive layer and is coated with
The hollow three-dimensional structure of the new materials such as graphene increases the receiving intensity of photosignal, mentions to expand contact area
High receiving sensitivity.
In order to achieve the above object, the present invention is achieved by the following technical programs: the multilayer based on export-oriented S type conducting wire
Structure pixel, including the substrate (1) for reading circuit, the microbridge (2) that is electrically connected with reading circuit, microbridge (2) can will be electric
Electromagnetic wave radiation signal is converted into electric signal, and microbridge (2) includes the first layer bridge pier (201) for being used to support microbridge, is arranged first
Bridge floor (202) on layer bridge pier, it is characterised in that: the microbridge (2) further includes second layer bridge pier (204), the first layer bridge
Using " S " type wiring (203) between pier (201) and second layer bridge pier (204), it is located at adjacent multilayered structure pixel bottom outside；Institute
Stating bridge floor (202) surface has a photosensitive layer (4), and to electromagnetic wave absorption, photosensitive layer (4) upper surface includes a layer insulating, sense
Photosphere surface is equipped with several hollow three-dimensional structures (5).
Preferably, the hollow three-dimensional structure (5) is the stereochemical structure of several hollow regular shapes or irregular shape.
Preferably, the stereochemical structure of the hollow regular shape is cuboid or cylindrical body.
Preferably, the surface full-filling of the hollow three-dimensional structure (5) has the graphene coated using nanoimprinting process.
A kind of multilayered structure pixel array, it is characterised in that: use multiple multilayered structure pixels based on export-oriented S type conducting wire
Repeat Heterogeneous Permutation composition.
A kind of imaging sensor increasing picture based on dislocation, it is characterised in that: including using multiple based on export-oriented S type conducting wire
Multilayered structure pixel repeats the pixel array of Heterogeneous Permutation composition, for acquiring picture signal；ASIC circuit is used for multilayered structure
Pixel array acquisition picture signal, and collected signal is read out, handles, analyze, exporting.
The beneficial effects of the present invention are: the present invention is routed peripheral hardware by unique " S " type, reduces signals transmission
In distortion be provided on several surfaces and be coated with graphene, dark fund, Organic Conductive Films etc. while on the basis of photosensitive layer
The hollow three-dimensional structure of new material, so that expanding the receiving area of electromagnetic wave in the case that space remains unchanged, improving
Receiving sensitivity effectively promotes 30% or more；And present invention process is simple, is suitable for large-scale production.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, those of ordinary skill in the art are come
It says, without creative efforts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is multilayered structure pixel stereoscopic schematic diagram of the present invention；
Fig. 2 is the top view of multilayered structure pixel of the present invention；
Fig. 3 is the structure principle chart of multilayered structure pixel of the present invention；
Fig. 4 is the single enlarged drawing of cuboid of hollow structure of the invention;
Fig. 5 is multilayered structure pixel array partial top view of the invention；
Fig. 6 is the bottom view of Fig. 5；
Fig. 7 is the multilayered structure pixel stereoscopic schematic diagram that hollow structure of the present invention is cylindrical body；
Wherein, 1: substrate；2: microbridge: 201: bridge pier；202: bridge floor；203:S type conducting wire；204: bridge pier；3: circuit layer；4:
Photosensitive layer；5: hollow three-dimensional structure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described.Based on the embodiments of the present invention,
Every other embodiment obtained by those of ordinary skill in the art without making creative efforts, belongs to this hair
The range of bright protection.
Now, it seems applied to the new technology of next-generation imaging sensor that dislocation, which increases, and Core Superiority is in same physical
Under the premise of space, identical pixel dimension, resolution ratio is significantly promoted.It, can if on the basis of this, increasing completely new stereochemical structure
Preferably to increase absorption area, by coating new material, it more can increase the receiving intensity of photosignal, it is sensitive to improve reception
Degree.
In the prior art, on the one hand, bad (thickness, the uniformity) or MEMS machining accuracy of material coating are bad, all
Directly index is impacted, on the other hand, traditional pixel structure is arranged line by line using level, at present technology very at
It is ripe, to improve image sensor resolutions and picture quality method it is general there are two types of, first is to increase optical system focal length,
But it will cause the volume of whole set equipment, quality, costs to greatly increase in this way, and must redesign optical system, implements
Get up relatively complicated；Second is to reduce imaging sensor pixel dimension, under normal circumstances, in the case where optical-mechanical system is constant,
It if reducing pixel dimension, and will cause imaging system MTF decline, signal-to-noise ratio reduction, influence image quality, be based on this, this hair
It is bright to provide a kind of imaging sensor multilayered structure pixel for increasing picture based on dislocation.
As shown in Figure 1, Figure 2, Figure 3 shows.Based on the multilayered structure pixel of export-oriented S type conducting wire, including for reading circuit
Electromagenetic wave radiation signal can be converted into electric signal by substrate 1, the microbridge 2 being electrically connected with reading circuit, microbridge 2, and microbridge 2 includes
The first layer bridge pier 201 for being used to support microbridge, the bridge floor 202 being arranged on first layer bridge pier, microbridge 2 further include second layer bridge pier
204, using " S " type wiring 203 between first layer bridge pier 201 and second layer bridge pier 204, it is located at adjacent multilayered structure pixel bottom outside
Portion；There is a photosensitive layer 4 on 202 surface of bridge floor, and to electromagnetic wave absorption, 4 upper surface of photosensitive layer includes a layer insulating, photosensitive layer table
Face is equipped with several hollow three-dimensional structures 5.
Further, hollow three-dimensional structure is the stereochemical structure of hollow regular shape or irregular shape.
Further, the stereochemical structure of hollow regular shape is cuboid or the regular shapes such as cylindrical body or cone
Stereochemical structure.
Further, the surface full-filling of hollow three-dimensional structure 5 has the graphene coated using nanoimprinting process.
Further, the surface of hollow three-dimensional structure can also full-filling dark fund, nano coating, organic light-guide electrolemma etc. it is other
New material.
Further, be located in photosensitive layer surface be solid construction stereochemical structure.
Further, the stereochemical structure of solid construction is the stereochemical structure of solid regular shape or irregular shape.
Further, the stereochemical structure of solid regular shape is cuboid or the regular shapes such as cylindrical body or cone
Stereochemical structure.
Further, the surface full-filling of solid cube structure has the graphene coated using nanoimprinting process.
Further, the surface of solid cube structure can also full-filling dark fund, nano coating, organic light-guide electrolemma etc. it is other
New material.
According to above multilayered structure pixel, inventor additionally provides a kind of multilayered structure pixel array, using multiple bases
Heterogeneous Permutation composition is repeated in the multilayered structure pixel of export-oriented S type conducting wire.
According to above multilayered structure pixel array, a kind of image biography increased based on dislocation as technology is had also been devised in inventor
Sensor, it is characterised in that: repeat Heterogeneous Permutation composition using multiple multilayered structure pixels based on export-oriented S type conducting wire including one
Pixel array, for acquiring picture signal；ASIC circuit is used for multilayered structure pixel array acquisition picture signal, and will adopt
The signal collected is read out, handles, analyzes, exports.
Fig. 4 is the single enlarged drawing of cuboid of hollow structure of the invention；
Fig. 5 is multilayered structure pixel array partial top view of the invention；
Fig. 6 is multilayered structure pixel array partial bottom view of the invention；
Fig. 7 is the multilayered structure pixel stereoscopic schematic diagram that hollow structure of the present invention is cylindrical body；
In the present invention, peripheral hardware is routed by unique " S " type, so that signal reduces interference in transmission process, together
When on the basis of photosensitive layer, the hollow structure solid knot of the new materials material such as graphene is coated with provided with several surfaces
Structure, so that receiving sensitivity has large increase, statistics indicate that, in the case where space remains unchanged, receiving sensitivity has
Effect promotes 30% or more；And the present invention (uses other stereochemical structures, under normal circumstances complex process, easily relative to routine techniques
Cause decrease in yield) for, simple process can be mass produced.
In addition, repeating the multilayered structure pixel array of Heterogeneous Permutation composition by multilayered structure pixel and being obtained based on this
Dislocation increase the imaging sensor of picture, compared to the imaging sensor of traditional technology, imaging sensor designed by the present invention,
There is large increase in image resolution ratio and image quality.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (6)
1. based on the multilayered structure pixel of export-oriented S type conducting wire, including for reading circuit substrate (1), be electrically connected with reading circuit
Electromagenetic wave radiation signal can be converted into electric signal by the microbridge (2) connect, microbridge (2), and microbridge (2) includes being used to support microbridge
First layer bridge pier (201), the bridge floor (202) being arranged on first layer bridge pier, it is characterised in that: the microbridge (2) further includes
Two layers of bridge pier (204), using " S " type wiring (203), peripheral hardware between the first layer bridge pier (201) and second layer bridge pier (204)
In adjacent multilayered structure pixel bottom；Bridge floor (202) surface has a photosensitive layer (4), to electromagnetic wave absorption, photosensitive layer
(4) upper surface includes a layer insulating, and photosensitive layer surface is equipped with several hollow three-dimensional structures (5).
2. the multilayered structure pixel as described in claim 1 based on export-oriented S type conducting wire, it is characterised in that: the hollow three-dimensional
Structure is the stereochemical structure of hollow regular shape or irregular shape.
3. the multilayered structure pixel as claimed in claim 2 based on export-oriented S type conducting wire, it is characterised in that: the hollow rule
The stereochemical structure of shape is cuboid or cylindrical body.
4. the multilayered structure pixel as described in claim 1 based on export-oriented S type conducting wire, it is characterised in that: the hollow three-dimensional
The surface full-filling of structure (5) has the graphene coated using nanoimprinting process.
5. a kind of multilayered structure pixel array, it is characterised in that: using multiple according to any one of claims 1-4 based on outer
Heterogeneous Permutation composition is repeated to the multilayered structure pixel of S type conducting wire.
6. a kind of imaging sensor for increasing picture based on dislocation, it is characterised in that: including multilayered structure picture as claimed in claim 5
Element array, for acquiring picture signal；ASIC circuit is used for multilayered structure pixel array acquisition picture signal, and will collect
Signal be read out, handle, analyze, export.
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| CN201610294321.6A CN105762164B (en) | 2016-05-03 | 2016-05-03 | Multilayered structure pixel and imaging sensor based on export-oriented S type conducting wire |
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| CN201610294321.6A CN105762164B (en) | 2016-05-03 | 2016-05-03 | Multilayered structure pixel and imaging sensor based on export-oriented S type conducting wire |
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| CN106197685A (en) * | 2016-07-30 | 2016-12-07 | 合肥芯福传感器技术有限公司 | Staggered pixel un-cooled infrared focal plane array reading circuit |
| JP7288296B2 (en) * | 2017-12-13 | 2023-06-07 | キヤノン株式会社 | Terahertz wave camera and detection module |
| CN113532655B (en) * | 2021-07-02 | 2023-04-18 | 北京安酷智芯科技有限公司 | Infrared thermal imaging sensor pixel and infrared thermal imaging sensor |
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| CN102393251B (en) * | 2011-09-29 | 2013-03-06 | 电子科技大学 | Two-layer micrometering bolometer and manufacturing method thereof |
| CN104649213B (en) * | 2013-11-19 | 2016-04-13 | 上海巨哥电子科技有限公司 | A kind of micro-bridge structure and preparation method thereof |
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