CN103695869A - Preparation method of graphene film - Google Patents
Preparation method of graphene film Download PDFInfo
- Publication number
- CN103695869A CN103695869A CN201310711760.9A CN201310711760A CN103695869A CN 103695869 A CN103695869 A CN 103695869A CN 201310711760 A CN201310711760 A CN 201310711760A CN 103695869 A CN103695869 A CN 103695869A
- Authority
- CN
- China
- Prior art keywords
- substrate
- preparation
- graphene
- graphene film
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a preparation method of a graphene film. The preparation method comprises the following steps: providing a graphene growth substrate, and placing the substrate in a high-temperature area formed by heating; applying accelerating electric fields and screening magnetic fields vertical to the substrate and along a surface normal direction of the graphene film needing deposition along the substrate in sequence, and taking the substrate as a positive electrode of the accelerating electric fields; heating the substrate, a screening magnetic field area and an accelerating electric field area; ventilating a carbon-containing gas as a carbon source, ionizing the carbon-containing gas into plasmas before ventilating into the screening magnetic field area, and enabling the plasmas to enter the screening magnetic field area in a jet-flow form, wherein charged ions in the jet-flow have different movement radiuses under action of different screening magnetic fields according to difference of charged quantity; and enabling the screened carbon ions to enter the accelerating electric fields, accelerating the carbon ions to a certain speed under action of the accelerating electric fields to collide the substrate surface, so that graphene growth is realized. The preparation method disclosed by the invention can greatly improve production efficiency of the graphene and can obtain high-quality large-dimension graphene by virtue of continuous growth.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of method for manufacturing thin film, relate in particular to a kind of preparation method of graphene film.
Background technology
Graphene (Graphene) is a kind ofly by carbon atom, with sp2 hybridized orbital, to form the flat film that hexangle type is honeycomb lattice, only has the two-dimensional material of a carbon atom thickness.Chemical vapour deposition (CVD) method is the novel method of preparing Graphene that development in recent years is got up, the party law court utilizes the carbon compounds such as methane as carbon source, pyrolytic decomposition growing graphene by it at matrix surface, there is the advantages such as product quality is high, growth area is large, become gradually the main method of preparing high-quality graphene.
Aspect carbon source, the carbon source of growing graphene is mainly hydrocarbon gas at present, as methane (CH4), ethene (C2H4), acetylene (C2H2) etc.The factor of selecting carbon source to consider mainly contains decomposition temperature, decomposition rate and the degradation production etc. of hydrocarbon gas.The methods such as being chosen in of carbon source determined growth temperature to a great extent, and using plasma is auxiliary also can reduce the growth temperature of Graphene.
Aspect growing substrate, the growing substrate using at present mainly comprises the metallic film in tinsel or particular substrate.Metal mainly contains Ni, Cu, Ru and alloy etc., and the Main Basis of selection has the fusing point of metal, molten carbon amount and whether has stable metallic carbide etc.These factors have determined the carrier gas type of growth temperature, growth mechanism and the use of Graphene.In addition, the crystal type of metal and crystalline orientation also can affect the growth quality of Graphene.
On growth conditions, adopt negative pressure to be beneficial to the ionization of carbonaceous gas, shielding gas can adopt reducing gas (H2) or rare gas element (Ar, He).Growth temperature is in 400～1000 degree left and right, and this depends primarily on the selection of carbon source certainly.
In the process of CVD method growing graphene in the past, carbon atom is undertaken by diffusion process is spontaneous to substrate surface deposition, is difficult to carry out manual control, makes the entrained carbon of other ions also participate in reaction, cause Graphene growth pattern inconsistent, and then affect film quality.
In view of this, nowadays in the urgent need to designing a kind of growth method of new graphene film, to overcome now methodical above-mentioned defect.
Summary of the invention
Technical problem to be solved by this invention is: the preparation method that a kind of graphene film is provided, can effectively get rid of the impact of other negative ions and control the growth pattern of Graphene, can significantly improve the production efficiency of Graphene, by continuous growth, obtain high-quality, large-sized single crystal graphene.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation method for graphene film, described method comprises the steps:
Graphene growth substrates is provided, described substrate is placed in to the high-temperature area that heating arrangements adds thermosetting;
Perpendicular to substrate and along the surface normal direction that substrate need to deposit graphene film, applying successively accelerating field and screening magnetic field, substrate is as the positive pole of accelerating field;
Heated substrate, screening field region and accelerating field region;
Pass into carbonaceous gas as carbon source, before passing into screening field region, carbonaceous gas is ionized into plasma body;
Plasma body enters screening field region with the form of jet, and in jet, charged ion is according to having different motion radius under the effect in the screening magnetic field that do not coexist of electrically charged amount;
The screened accelerating field that out enters into afterwards of carbon ion, clashes into substrate surface after accelerating to certain speed, thereby realize the growth of Graphene under the effect of accelerating field.
As a preferred embodiment of the present invention, described substrate material is one or more in silicon, germanium, silicon-dioxide, silicon carbide, boron nitride, copper, ruthenium, nickel, cobalt, iron, platinum material.
As a preferred embodiment of the present invention, described substrate material is positioned over hot-plate high-temperature area, and described high-temperature area temperature is 500～1000 ℃.
As a preferred embodiment of the present invention, described heating arrangements is removable hot-plate, and removable hot-plate translational speed is 0.1mm/min～10mm/min.
As a preferred embodiment of the present invention, described plasma fluid generator is used radio-frequency (RF) plasma generator or DC arc plasma generator;
The electromagnetic field frequency scope of described radio-frequency (RF) plasma reactor is 0.5MHz～500MHz;
The voltage range of described DC arc plasma generator is 10V～1000V, and range of current is 100～5000A.
As a preferred embodiment of the present invention, described accelerating field intensity is 1V～100V/mm.
As a preferred embodiment of the present invention, described screening magnetic field is the magnetic field that permanent magnet or solenoid produce, and its size is 5～5000Oz.
As a preferred embodiment of the present invention, in working chamber, pressure is 0.5Pa～10000Pa.
As a preferred embodiment of the present invention, described carbonaceous gas is methane, or is acetylene, or the gas for containing methyl methacrylate or sucrose.
As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:
Plasma chamber and sediment chamber are vacuumized, remain in the air pressure range of 1-10Pa; By the heating of removable hot-plate, silicon substrate is by the condition of high temperature in 1000 degree, and described high-temperature area temperature is 500～1000 ℃; In plasma chamber, vertical direction applies screening magnetic field, and its size is 10 Gausses; In addition, heating current used adopts the ac mode of appropriate frequency, and within Preparation equipment is placed on the vacuum chamber of suitable vacuum tightness, methane gas is subject to high-frequency current effect to be ionized into plasma body like this, and this plasma body represents with following formula:
CH
4→C
4-+4H
+，
CH
4→CH
3-+3H
+，
CH
4→CH
2 2-+2H
+，
CH
4→CH
3 -+H
+，
After plasma generation, sprayed at a high speed screening field region, each ion moves in a circle under the action of a magnetic field, its radius: R=mv/qB, and wherein m is each mass of ion, and v is speed, and q is each ion band electric weight, and B is magneticstrength; Because carbon ion carried charge is maximum, its moving radius is minimum; Baffle plate has slit apart from plasma body entrance setpoint distance, makes carbon ion enter accelerating field through accelerating field top crown, and other ions are got on baffle plate;
In accelerating field, carbon ion is accelerated, and bombardment is subsequently positioned at the silicon substrate on heating base, thereby realizes the chemical vapour deposition under electric field enhancement;
Substrate surface will form the nucleating center of growing carbon film two-dimensional nucleation, and Graphene island, forms graphene film;
Use the mobile hot-plate of speed of 0.1mm/min, drive substrate to move, thereby make Graphene big area, successive sedimentation on whole substrate.
Preparation method's implementation process of the present invention comprises the steps: that whole working chamber vacuumizes, and its pressure range is 0.5Pa～10000Pa, keeps this pressure constant in subsequent growth.Select Graphene growth substrates, be placed on the high-temperature area that electrically heated forms, its temperature range is 500～1000 ℃; Perpendicular to substrate and along the surface normal direction that substrate need to deposit graphene film, applying successively accelerating field and screening magnetic field, wherein accelerating field intensity is 1V～100V/mm, and screening magneticstrength is 5～5000Oz.Substrate is as the positive pole of accelerating field; Heated substrate, screening field region and accelerating field region; Pass into carbonaceous gas as carbon source, before passing into screening field region, use radio-frequency (RF) plasma generator or DC arc plasma generator are ionized into plasma body by carbonaceous gas, wherein the electromagnetic field frequency scope of radio-frequency (RF) plasma reactor is 0.5MHz～500MHz, the voltage range of DC arc plasma generator is 10V～1000V, and range of current is 100～5000A; Plasma body enters screening field region with the form of jet, and in jet, charged ion is according to having different motion radius under the effect in the screening magnetic field that do not coexist of electrically charged amount.The screened accelerating field that out enters into afterwards of carbon ion, clashes into substrate surface after accelerating to certain speed, thereby realize the growth of Graphene under the effect of accelerating field.
The electric field of high temperature, subatmospheric and high frequency easily makes γ-ray emission ionization, when carbonaceous gas is after ionization, will produce plasma body.Wherein negative ion is with CH
3-, CH
2 2-, CH
3 -, C
4-form exist, except carbon ion, other negative ions will reduce the quality of graphene film in the deposition of substrate.This patent, for addressing this problem, has increased screening magnetic field above substrate, and it can carry out screening and separating to each ion according to the difference of different negative ion carried charges, to reach the object of isolating carbon ion.Behind screening magnetic field.Carbon ion will be accelerated under the effect of accelerating field, finally clash into substrate surface, reach the object of the process of strengthening CVD deposition.Said process can calculate the acceleration of carbon ion in electric field with formula ma=4qE, the quality that in formula, m is carbon ion, and the acceleration that a is carbon ion, q is electronic charge, E is strength of electric field.By the calculating of the acceleration of carbon ion is learnt, when CVD deposits, suitable strength of electric field can make substrate surface realize the carbon atom surge pressure of P=0.1～15GPa, under this pressure, substrate surface, by forming the nucleating center (Graphene island) of the two-dimensional nucleation of growing carbon film, forms graphene film.In deposition process, by mobile hot-plate, change the deposition position of carbon ion on substrate, thereby reach the big area graphene film object of growth continuously.The translational speed of hot-plate is 0.1mm/min～10mm/min.According to carbon phase diagram, strengthening acceleration voltage can increase the pressure that carbon ion produces at substrate surface, and pressure reaches after certain particular value, can obtain diamond thin at substrate surface.
Beneficial effect of the present invention is: the preparation method of the graphene film that the present invention proposes, by Electromagnetic enhancement carbon ion, to substrate surface, deposit, by control, screen magnetic field simultaneously and can, effectively by carbon ion and other ion isolation, reduce the impact of other ion pair graphene film qualities.By controlling accelerating field, can control the speed of carbon ion bombardment substrate, thereby control the growthhabit of Graphene, finally improve quality and the efficiency of vapour deposition Graphene.
Accompanying drawing explanation
Fig. 1 is the preparation method's of graphene film of the present invention preparation principle schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, describe the preferred embodiments of the present invention in detail.
Embodiment mono-
Refer to Fig. 1, preparation method of the present invention utilizes a Preparation equipment to prepare graphene film 4, described Preparation equipment comprises plasma chamber 12, plasma chamber 12 is provided with plasma jet mouth 2, residual gas outlet 10, plasma jet mouth 2 places are provided with plasma generator 1, carbon source 9 enters plasma chamber 12 by plasma jet mouth 2 after plasma generator 1 is processed, the interior formation screening of plasma chamber 12 magnetic field 11.
Plasma chamber 12 is provided with baffle plate 3, and particularly, in the present embodiment, baffle plate 3 is positioned over plasma chamber 12 bottoms.Described plasma chamber 12 outsides are also provided with sediment chamber 8, are provided with removable hot-plate 7 in sediment chamber 8, and substrate (being silicon substrate) 6 is arranged on removable hot-plate 7; Above silicon substrate 6, in the plane parallel with removable hot-plate 7, be equipped with acceleration voltage net 4.Acceleration voltage net 4 is as negative pole, and removable hot-plate 7 is as anodal; Potential difference between acceleration voltage net 4 and removable hot-plate 7 is about 7V.Acceleration voltage net 4 is connected by engage thread with sediment chamber 8.
The present invention has disclosed a kind of preparation method of graphene film, adopts the mode of current flow heats electrically-conductive backing plate, and silicon substrate is placed on resistive heating plate.Substrate material can be one or more in silicon, germanium, silicon-dioxide, silicon carbide, boron nitride, copper, ruthenium, nickel, cobalt, iron, platinum material.
Plasma chamber 12He sediment chamber 8 is vacuumized, be maintained at about in the air pressure range of 1-10Pa.By removable hot-plate 7(resistive heating plate) heating, silicon substrate 6 is by the condition of high temperature in 1000 about degree, described high-temperature area temperature is 500～1000 ℃.At the interior vertical direction of plasma chamber 12, apply screening magnetic field 11, its size is about 10 Gausses.In addition, heating current used adopts the ac mode of appropriate frequency, and within said mechanism is placed on the vacuum chamber of suitable vacuum tightness, methane gas is subject to high-frequency current effect to be ionized into plasma body like this, this plasma body represents that with following formula (methane of take is example as working gas, can certainly, for other gas, as acetylene, or be the gas that contains methyl methacrylate or sucrose):
CH4→C4-+4H+，
CH4→CH3-+3H+，
CH4→CH22-+2H+，
CH4→CH3-+H+，
After plasma generation, sprayed at a high speed screening field region, its V-bar is about 2*103m/s, suppose that each ion V-bar is identical, each ion moves in a circle under the action of a magnetic field, its radius: R=mv/qB, wherein m is each mass of ion, v is speed, q is each ion band electric weight, and B is magneticstrength.Because carbon ion carried charge is maximum, its moving radius is minimum, is about 6.2cm.Baffle plate 3 has slit apart from plasma body entrance 6.2cm place, makes carbon ion enter accelerating field through accelerating field top crown, and other ions are got on baffle plate 3.
In accelerating field, carbon ion is accelerated, and bombardment is subsequently positioned at the silicon substrate on heating base, thereby realizes the chemical vapour deposition under electric field enhancement.In above-mentioned discussion, using silicon as substrate, using methane as work carbon source.
In said process, the carbon atom pressure estimation forming in surface of silicon is as follows: when the potential difference of accelerating field is about 7V, by suitable spacing, can produce 10
-2the strength of electric field of V/um.Pressure in reaction chamber is when 20～30Torr, and the carbon ion in the methane being ionized is by a=3 * 10
11m/s
2the acceleration of left and right, about t=10
-7the pick-up period of s, about v=2.3 * 10
4the velocity shock substrate of m/s, the momentum of formation reaches p=4.8 * 10
-22kg m/s left and right.Suppose that accelerated carbon ion is static by atomic effect by reduction of speed in the two-layer atomic distance of substrate, can estimate and be about t=2.9 * 10 dead time
-14s, stagnation power is F=1.5 * 10
-8n.Suppose again 5 layers of interatomic distance that this stagnation power steam circle is substrate, can calculate carbon ion reactive force on substrate and be about P=1.4GPa.We can estimate that carbon ion clashes into the energy of substrate equally, and the energy that carbon ion obtains in electric field is about 7.1 * 10
-18j.Under these conditions, substrate surface, by forming the nucleating center (Graphene island) of growing carbon film two-dimensional nucleation, forms graphene film.The mobile removable hot-plate of speed that uses 0.1mm/min, drives substrate to move, thereby makes Graphene big area, successive sedimentation on whole substrate.
Embodiment bis-
The present embodiment adopts the mode identical with embodiment mono-, is with the difference of embodiment mono-, and screening magneticstrength is 20Oz, and now the moving radius of carbon ion is 3.1cm.Slit on baffle plate and plasma body entrance distance are adjusted into 3.6cm, and carbon ion can enter accelerating field through accelerating field top crown, and other negative ions cannot enter accelerating field.
Embodiment tri-
The present embodiment adopts the mode identical with embodiment mono-, is with the difference of embodiment mono-, and screening magneticstrength is 5Oz, and now the moving radius of carbon ion is 12.4cm.Slit on baffle plate and plasma body entrance distance are adjusted into 12.4cm, and carbon ion can enter accelerating field through accelerating field top crown, and other negative ions cannot enter accelerating field.
In sum, the preparation method of the graphene film that the present invention proposes, by Electromagnetic enhancement carbon ion, to substrate surface, deposit, by control, screen magnetic field simultaneously and can, effectively by carbon ion and other ion isolation, reduce the impact of other ion pair graphene film qualities.By controlling accelerating field, can control the speed of carbon ion bombardment substrate, thereby control the growthhabit of Graphene, finally improve quality and the efficiency of vapour deposition Graphene.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change is possible, and for those those of ordinary skill in the art, the various parts of the replacement of embodiment and equivalence are known.Those skilled in the art are noted that in the situation that not departing from spirit of the present invention or essential characteristic, and the present invention can be with other form, structure, layout, ratio, and realizes with other assembly, material and parts.In the situation that not departing from the scope of the invention and spirit, can carry out other distortion and change to disclosed embodiment here.
Claims (10)
1. a preparation method for graphene film, is characterized in that, described method comprises the steps:
Graphene growth substrates is provided, described substrate is placed in to the high-temperature area that heating arrangements adds thermosetting;
Perpendicular to substrate and along the surface normal direction that substrate need to deposit graphene film, applying successively accelerating field and screening magnetic field, substrate is as the positive pole of accelerating field;
Heated substrate, screening field region and accelerating field region;
Pass into carbonaceous gas as carbon source, before passing into screening field region, carbonaceous gas is ionized into plasma body;
Plasma body enters screening field region with the form of jet, and in jet, charged ion is according to having different motion radius under the effect in the screening magnetic field that do not coexist of electrically charged amount;
The screened accelerating field that out enters into afterwards of carbon ion, clashes into substrate surface after accelerating to certain speed, thereby realize the growth of Graphene under the effect of accelerating field.
2. the preparation method of graphene film according to claim 1, is characterized in that:
Described substrate material is one or more in silicon, germanium, silicon-dioxide, silicon carbide, boron nitride, copper, ruthenium, nickel, cobalt, iron, platinum material.
3. the preparation method of graphene film according to claim 1, is characterized in that:
Described substrate material is positioned over hot-plate high-temperature area, and described high-temperature area temperature is 500～1000 ℃.
4. the preparation method of graphene film according to claim 1, is characterized in that:
Described heating arrangements is removable hot-plate, and removable hot-plate translational speed is 0.1mm/min～10mm/min.
5. the preparation method of graphene film according to claim 1, is characterized in that:
Described plasma fluid generator is used radio-frequency (RF) plasma generator or DC arc plasma generator;
The electromagnetic field frequency scope of described radio-frequency (RF) plasma reactor is 0.5MHz～500MHz;
The voltage range of described DC arc plasma generator is 10V～1000V, and range of current is 100～5000A.
6. the preparation method of graphene film according to claim 1, is characterized in that:
Described accelerating field intensity is 1V～100V/mm.
7. the preparation method of graphene film according to claim 1, is characterized in that:
Described screening magnetic field is the magnetic field that permanent magnet or solenoid produce, and its size is 5～5000Oz.
8. the preparation method of graphene film according to claim 1, is characterized in that:
In working chamber, pressure is 0.5Pa～10000Pa.
9. the preparation method of graphene film according to claim 1, is characterized in that:
Described carbonaceous gas is methane, or is acetylene, or the gas for containing methyl methacrylate or sucrose.
10. the preparation method of graphene film according to claim 1, is characterized in that:
Described preparation method specifically comprises the steps:
Plasma chamber and sediment chamber are vacuumized, remain in the air pressure range of 1-10Pa; By the heating of removable hot-plate, silicon substrate is by the condition of high temperature in 1000 degree, and described high-temperature area temperature is 500～1000 ℃; In plasma chamber, vertical direction applies screening magnetic field, and its size is 10 Gausses; In addition, heating current used adopts the ac mode of appropriate frequency, and within Preparation equipment is placed on the vacuum chamber of suitable vacuum tightness, methane gas is subject to high-frequency current effect to be ionized into plasma body like this, and this plasma body represents with following formula:
CH
4→C
4-+4H
+，
CH
4→CH
3-+3H
+，
CH
4→CH
2 2-+2H
+，
CH
4→CH
3 -+H
+，
After plasma generation, sprayed at a high speed screening field region, each ion moves in a circle under the action of a magnetic field, its radius: R=mv/qB, and wherein m is each mass of ion, and v is speed, and q is each ion band electric weight, and B is magneticstrength; Because carbon ion carried charge is maximum, its moving radius is minimum; Baffle plate has slit apart from plasma body entrance setpoint distance, makes carbon ion enter accelerating field through accelerating field top crown, and other ions are got on baffle plate;
In accelerating field, carbon ion is accelerated, and bombardment is subsequently positioned at the silicon substrate on heating base, thereby realizes the chemical vapour deposition under electric field enhancement;
Substrate surface will form the nucleating center of growing carbon film two-dimensional nucleation, and Graphene island, forms graphene film;
Use the mobile hot-plate of speed of 0.1mm/min, drive substrate to move, thereby make Graphene big area, successive sedimentation on whole substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310711760.9A CN103695869A (en) | 2013-12-20 | 2013-12-20 | Preparation method of graphene film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310711760.9A CN103695869A (en) | 2013-12-20 | 2013-12-20 | Preparation method of graphene film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103695869A true CN103695869A (en) | 2014-04-02 |
Family
ID=50357527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310711760.9A Pending CN103695869A (en) | 2013-12-20 | 2013-12-20 | Preparation method of graphene film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103695869A (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104148045A (en) * | 2014-08-15 | 2014-11-19 | 中国科学院青海盐湖研究所 | Arc process-based graphene/titanium dioxide composite material preparation method |
| CN104195522A (en) * | 2014-08-18 | 2014-12-10 | 苏州宏久航空防热材料科技有限公司 | Preparation method of glass fiber cotton felt with high thermal conductivity |
| CN104190395A (en) * | 2014-08-15 | 2014-12-10 | 中国科学院青海盐湖研究所 | Graphene/titanium dioxide composite material and preparation method thereof |
| CN104319290A (en) * | 2014-10-29 | 2015-01-28 | 上海集成电路研发中心有限公司 | Three-grid graphene fin type field effect transistor and manufacturing method thereof |
| CN105088335A (en) * | 2014-05-09 | 2015-11-25 | 理想能源设备(上海)有限公司 | Device and growth method for growing graphene films |
| CN105220104A (en) * | 2014-06-19 | 2016-01-06 | 成都真火科技有限公司 | A kind of method improving subatmospheric plasma spraying deposition |
| CN107074550A (en) * | 2014-07-17 | 2017-08-18 | 锡达里奇研究有限责任公司 | System for manufacturing graphene in magnetic field |
| CN107459033A (en) * | 2017-07-11 | 2017-12-12 | 江苏星特亮科技有限公司 | A kind of method for preparing graphene film |
| CN110697693A (en) * | 2019-09-06 | 2020-01-17 | 广州墨羲科技有限公司 | Graphene nanosheet material, and rapid manufacturing method and application thereof |
| CN110872116A (en) * | 2018-09-04 | 2020-03-10 | 新奥科技发展有限公司 | Preparation device and preparation method of graphene |
| CN112010292A (en) * | 2020-09-09 | 2020-12-01 | 宁波中冶电子科技有限公司 | Preparation method and application of graphene material |
| CN112830478A (en) * | 2021-01-15 | 2021-05-25 | 北京石墨烯研究院 | Vertical graphene-based thermal interface material and preparation method and device thereof |
| CN113086974A (en) * | 2021-04-02 | 2021-07-09 | 合肥碳艺科技有限公司 | Nitrogen-doped graphene and preparation method and application thereof |
| CN114044512A (en) * | 2021-11-22 | 2022-02-15 | 上海大学 | Method for stably preparing graphene by utilizing solid carbon source in composite strong magnetic field |
| CN114096696A (en) * | 2019-06-27 | 2022-02-25 | 朗姆研究公司 | Processing tool capable of being used to form a carbon layer on a substrate |
| CN114314569A (en) * | 2022-01-10 | 2022-04-12 | 厦门大学 | Method for forming graphene on substrate |
| CN114933298A (en) * | 2022-06-24 | 2022-08-23 | 中山烯利来设备科技有限公司 | Graphene manufacturing method |
| CN115057431A (en) * | 2022-06-24 | 2022-09-16 | 中山烯利来设备科技有限公司 | Method for manufacturing carbon nano tube |
| CN115074694A (en) * | 2022-07-01 | 2022-09-20 | 常州第六元素半导体有限公司 | Graphene film preparation method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273626A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Ion implanting apparatus |
| JPH06267489A (en) * | 1993-03-11 | 1994-09-22 | Kobe Steel Ltd | Ion beam sputtering device and thin-film preparation method |
| JP2000235959A (en) * | 1996-05-15 | 2000-08-29 | Semiconductor Energy Lab Co Ltd | Doping treatment method |
| CN1425186A (en) * | 2000-12-28 | 2003-06-18 | 石川岛播磨重工业株式会社 | Method and device for separating ion mass, and ion doping device |
| US20030122090A1 (en) * | 2001-12-27 | 2003-07-03 | Sumitomo Eaton Nova Corporation | Ion beam processing method and apparatus therefor |
| JP2008010282A (en) * | 2006-06-28 | 2008-01-17 | Sharp Corp | Ion beam generating device, ion doping device, ion beam generating method, and mass separation method |
| CN102659098A (en) * | 2012-05-21 | 2012-09-12 | 武汉大学 | Equipment and method for preparing graphene |
| CN102947479A (en) * | 2010-06-22 | 2013-02-27 | 默克专利有限公司 | Method and device for coating a surface |
-
2013
- 2013-12-20 CN CN201310711760.9A patent/CN103695869A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273626A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Ion implanting apparatus |
| JPH06267489A (en) * | 1993-03-11 | 1994-09-22 | Kobe Steel Ltd | Ion beam sputtering device and thin-film preparation method |
| JP2000235959A (en) * | 1996-05-15 | 2000-08-29 | Semiconductor Energy Lab Co Ltd | Doping treatment method |
| CN1425186A (en) * | 2000-12-28 | 2003-06-18 | 石川岛播磨重工业株式会社 | Method and device for separating ion mass, and ion doping device |
| US20030122090A1 (en) * | 2001-12-27 | 2003-07-03 | Sumitomo Eaton Nova Corporation | Ion beam processing method and apparatus therefor |
| JP2008010282A (en) * | 2006-06-28 | 2008-01-17 | Sharp Corp | Ion beam generating device, ion doping device, ion beam generating method, and mass separation method |
| CN102947479A (en) * | 2010-06-22 | 2013-02-27 | 默克专利有限公司 | Method and device for coating a surface |
| CN102659098A (en) * | 2012-05-21 | 2012-09-12 | 武汉大学 | Equipment and method for preparing graphene |
Non-Patent Citations (1)
| Title |
|---|
| 不详: "《聚合物基复合材料 2版》", 30 September 2013, 顾书英，任杰编著，北京：化学工业出版社 * |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088335A (en) * | 2014-05-09 | 2015-11-25 | 理想能源设备(上海)有限公司 | Device and growth method for growing graphene films |
| CN105088335B (en) * | 2014-05-09 | 2018-01-05 | 理想能源设备(上海)有限公司 | A kind of device and its growing method for growing graphene film |
| CN105220104A (en) * | 2014-06-19 | 2016-01-06 | 成都真火科技有限公司 | A kind of method improving subatmospheric plasma spraying deposition |
| CN107074550A (en) * | 2014-07-17 | 2017-08-18 | 锡达里奇研究有限责任公司 | System for manufacturing graphene in magnetic field |
| CN104148045A (en) * | 2014-08-15 | 2014-11-19 | 中国科学院青海盐湖研究所 | Arc process-based graphene/titanium dioxide composite material preparation method |
| CN104190395A (en) * | 2014-08-15 | 2014-12-10 | 中国科学院青海盐湖研究所 | Graphene/titanium dioxide composite material and preparation method thereof |
| CN104148045B (en) * | 2014-08-15 | 2016-02-03 | 中国科学院青海盐湖研究所 | Based on the preparation method of the graphene/titania composite material of arc process |
| CN104190395B (en) * | 2014-08-15 | 2016-02-24 | 中国科学院青海盐湖研究所 | A kind of graphene/titania composite material and preparation method thereof |
| CN104195522A (en) * | 2014-08-18 | 2014-12-10 | 苏州宏久航空防热材料科技有限公司 | Preparation method of glass fiber cotton felt with high thermal conductivity |
| CN104319290A (en) * | 2014-10-29 | 2015-01-28 | 上海集成电路研发中心有限公司 | Three-grid graphene fin type field effect transistor and manufacturing method thereof |
| CN107459033A (en) * | 2017-07-11 | 2017-12-12 | 江苏星特亮科技有限公司 | A kind of method for preparing graphene film |
| CN110872116A (en) * | 2018-09-04 | 2020-03-10 | 新奥科技发展有限公司 | Preparation device and preparation method of graphene |
| CN114096696A (en) * | 2019-06-27 | 2022-02-25 | 朗姆研究公司 | Processing tool capable of being used to form a carbon layer on a substrate |
| CN110697693A (en) * | 2019-09-06 | 2020-01-17 | 广州墨羲科技有限公司 | Graphene nanosheet material, and rapid manufacturing method and application thereof |
| CN112010292A (en) * | 2020-09-09 | 2020-12-01 | 宁波中冶电子科技有限公司 | Preparation method and application of graphene material |
| CN112830478A (en) * | 2021-01-15 | 2021-05-25 | 北京石墨烯研究院 | Vertical graphene-based thermal interface material and preparation method and device thereof |
| CN113086974A (en) * | 2021-04-02 | 2021-07-09 | 合肥碳艺科技有限公司 | Nitrogen-doped graphene and preparation method and application thereof |
| CN114044512A (en) * | 2021-11-22 | 2022-02-15 | 上海大学 | Method for stably preparing graphene by utilizing solid carbon source in composite strong magnetic field |
| CN114044512B (en) * | 2021-11-22 | 2023-10-20 | 上海大学 | Method for stably preparing graphene by using solid carbon source under composite strong magnetic field |
| CN114314569A (en) * | 2022-01-10 | 2022-04-12 | 厦门大学 | Method for forming graphene on substrate |
| CN114314569B (en) * | 2022-01-10 | 2024-01-09 | 厦门大学 | Method for forming graphene on substrate |
| CN114933298A (en) * | 2022-06-24 | 2022-08-23 | 中山烯利来设备科技有限公司 | Graphene manufacturing method |
| CN115057431A (en) * | 2022-06-24 | 2022-09-16 | 中山烯利来设备科技有限公司 | Method for manufacturing carbon nano tube |
| CN115074694A (en) * | 2022-07-01 | 2022-09-20 | 常州第六元素半导体有限公司 | Graphene film preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103695869A (en) | Preparation method of graphene film | |
| CN103708444B (en) | The preparation method of graphene film and equipment | |
| Deshpandey et al. | Diamond and diamondlike films: Deposition processes and properties | |
| CN109778136B (en) | Method for preparing diamond-like coating by adopting thermionic plasma technology | |
| CN106587030B (en) | A kind of method that atmospheric cryochemistry vapor deposition prepares graphene film | |
| CN108203090B (en) | Preparation method of graphene | |
| CN101966987A (en) | Fractal graphene material with negative electron affinity as well as preparation method and application thereof | |
| CN102677019B (en) | Motion magnetic field auxiliary-reinforced chemical vapor deposition method and device | |
| CN104213076A (en) | Method and equipment for preparing ultra-hard DLC coatings through PVD and HIPIMS | |
| CN110950329A (en) | Vertical graphene and growth method thereof | |
| US20030021895A1 (en) | Method for producing coated substrates | |
| US9524742B2 (en) | CXNYHZ film, deposition method, magnetic recording medium and method for manufacturing the same | |
| CN103266306B (en) | A kind of PVD technology prepares the method for Graphene or ultrathin carbon films | |
| CN112853482A (en) | Method and equipment for preparing 100-surface diamond in situ by microwave plasma-magnetron sputtering composite vapor deposition | |
| CN104141109A (en) | Method for in-situ synthesis of composite TiC-DLC coating on surface of titanium | |
| Kim et al. | A review of inductively coupled plasma-assisted magnetron sputter system | |
| CN104694906A (en) | Non-parallel plate type capacitive coupled plasma chemical vapor deposition method | |
| CN1944308B (en) | Method for depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate | |
| Zhang et al. | Highly efficient field emission from ZnO nanorods and nanographene hybrids on a macroporous electric conductive network | |
| CN100395371C (en) | Apparatus for reinforcing arc-glow percolation plated ceating by microwave plasma and process thereof | |
| CN104786587A (en) | Preparation method of nano-lanthanum strontium manganese oxide/graphene composite wave absorbing coating | |
| JPS60195092A (en) | Method and apparatus for production of carbon thin film | |
| CN203639159U (en) | Equipment for preparing graphene film | |
| CN106555175A (en) | A kind of high-density plasma reinforced chemical vapor deposition apparatus | |
| CN105862131A (en) | Molybdenum introducing method for preparing molybdenum carbide crystal through MPCVD (Microwave Plasma Chemical Vapor Deposition) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140402 |