CN107074550A - System for manufacturing graphene in magnetic field - Google Patents
System for manufacturing graphene in magnetic field Download PDFInfo
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- CN107074550A CN107074550A CN201580050017.0A CN201580050017A CN107074550A CN 107074550 A CN107074550 A CN 107074550A CN 201580050017 A CN201580050017 A CN 201580050017A CN 107074550 A CN107074550 A CN 107074550A
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- graphene
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
Abstract
A kind of improved system for being used to generate graphene, it is related to produce multiple ionization carbon atoms in plasma generates room and provide the multiple ionization carbon atom to the graphene with magnetic texure and generates room, the magnetic texure includes the two-dimensional array of alternately polarity magnetic source, and the magnetic source produces the magnetic field with the gradient for being enough to make graphene be suspended in above the magnetic texure.The graphene generates room above the magnetic texure by the multiple ionization carbon atom generation graphene, thus, because the graphene is diamagnetic so that the graphene is suspended in above the magnetic texure.Control produces the speed of the multiple ionization carbon atom, to control the generating rate of graphene.The magnetic field of the magnetic texure can be controlled to control the graphene of generation to be moved through the speed that the graphene generates room, until it leaves as the graphite ene product of recovery.
Description
The cross reference of related application
This non-provisional application is that Shen is continued in the part for the non-provisional application number 14/275,267 submitted on May 12nd, 2014
Please, above-mentioned application be on May 13rd, 2014 issue United States Patent (USP) 8,721,843 part continuation application, United States Patent (USP) 8,
721,843 claims by Fullerton et al. submitted on October 15th, 2010 it is entitled " manufacture graphene system and
Rights and interests under the 35USC 119 (e) of the Provisional Application No. 61/455,211 of method ".
Entitled " the manufacture in magnetic field that this non-provisional application claims Fullerton et al. was submitted on July 17th, 2014
Rights and interests under the 35USC 119 (e) of the Provisional Application No. 62/025,691 of the system of graphene ".
Contents of these applications is incorporated herein by reference herein.
Invention field
The present invention broadly relates to a kind of system for generating continuous graphene film.More particularly it relates to
The system for manufacturing graphene using the continuous method for preparing net, from there through the ionization of source of carbon atoms generate it is uniform wait from
Daughter distribution produces the glow discharge of carbon atom with required speed, so that the graphene film being suspended in above magnetic field is continuously given birth to
It is long.
Background of invention
Currently used for the system and method for manufacture graphene film, such as using adhesive tape to remove graphene layer from graphite, lead to
It is often specific and uncontrollable.Therefore, it is desirable to there is the improvement for the graphene that enough quality and quantity are manufactured for commercial object
System and method.
The content of the invention
Deflocculated graphite alkene generates the improvement system of graphene when the present invention is by producing graphene above magnetic field.Root
According to one embodiment of the invention, the system for generating graphene in magnetic field includes：For producing multiple ionization carbon
The plasma generator of atom, the multiple ionization carbon atom leaves the plasma generator with carbon atom cloud；With
In receiving the carbon atom cloud when carbon atom cloud leaves the plasma generator and for former by multiple ionization carbon
The graphene generation room of son generation graphene film, the graphene generation room has magnetic texure, and the magnetic texure includes handing over
For the two-dimensional array of polarity magnetic source, the magnetic source produces to have and is enough to make the graphene film be suspended in above the magnetic texure
Magnetic field gradient, the magnetic texure extends to recovery section from growth part；And graphene seed source, for by graphene
Seed provides to the graphene initial position above the magnetic field in the growth part for generating room, is generated above the magnetic field
The graphene film so that because the graphene film is diamagnetic, the graphene film is suspended in above the magnetic field, institute
Stating carbon atom cloud makes the graphene film of the suspension continuously be grown from initial position, sets the graphene generation room so that institute
The graphene film for stating suspension moves away the initial position and generates room by the graphene, until it is used as recovery
Graphite ene product leaves the recovery section that the graphene generates room.
The system can include source of carbon atoms, wherein the source of carbon atoms can include methane, carbon dioxide or an oxygen
Change at least one of carbon.The chemical formula of the source of carbon atoms can only have a carbon atom.
The system can include inert gas, wherein the inert gas can include helium, argon gas, Krypton, neon
At least one of or xenon.
The system can include the ionization energy, wherein the ionization energy source can include one of radio frequency source or high-voltage power supply,
Wherein described radio frequency source can be microwave signal.
The system can include at least one control system, for controlling the source of carbon atoms and the inert gas
Ratio, control absolute pressure, and control is by the energy density for ionizing the plasma that the energy is produced, to control aura to put
The distribution of electricity and plasma, the glow discharge produces multiple ionization carbon atoms.Absolute pressure can be controlled to be divided
Mean free path between son collision, to produce being uniformly distributed for glow discharge and plasma.
The magnetic texure can be permanent-magnet material, wherein the permanent-magnet material can be magnetized so that the magnetic field
Magnetic field intensity is most strong near the initial position of the graphene seed, and the magnetic field intensity in the magnetic field gradually dies down, directly
It is most weak near the end for the recovery section for generating room in the graphene to it.
The magnetic texure can include one of electromagnet or electrical permanent-magnet.
The system can include at least one laser for being used to repair the graphene film.
The system can be included in second magnetic texure above the graphene.
The system can be set such that the central part showed along the outward flange in the magnetic field of its length than magnetic field
Divide stronger magnetic field intensity.
The system can include potential barrier magnetic field sources.
The system can be included in the processing part between the growth part of the graphene generation room and recovery section,
For processing the graphene film, wherein processing can include it is following in one kind：Laser draws conductive trace, uses cubic light
Carve and apply other atoms, activated carbon or poly-doped impurity.
Brief description of the drawings
Describe the present invention with reference to the accompanying drawings.In the accompanying drawings, identical reference represents identical or intimate element.Separately
Outside, the accompanying drawing that the leftmost Digital ID reference of reference occurs first.
Figure 1A depicts example graphite alkene manufacture system；
Figure 1B depicts another example graphite alkene manufacture system；
Fig. 2A depicts the cross section of the width across exemplary bowl-type magnetic texure；
Fig. 2 B depict the cross section of the width across the exemplary bowl-type magnetic field of magnetic texure；
Fig. 2 C depict the side view of the length of exemplary magnetic structure, and the magnetic texure has as graphene film is moved
The dynamic gradient that room is generated by graphene and reduced；
Fig. 2 D and 2E depict the exemplary magnetic structure similar to Fig. 2 C with exemplary potential barrier magnetic field；
Fig. 3 A depict example graphite alkene seed；
Fig. 3 B depict the top view that graphene film is grown from the position for introducing seed, wherein graphene film movement is remote
From the position and be suspended in graphene generation room magnetic texure top；
Fig. 4 depicts the illustrative methods according to the present invention；With
Fig. 5 depicts the exemplary magnetic structure according to the present invention.
Embodiment
The present invention is more fully described now with reference to accompanying drawing, the preferred embodiment of the present invention is illustrated therein is.So
And, it should not invention is construed as being limited to embodiment described in this paper；And it is to provide them so that present disclosure will be
Thoroughly and completely, and will fully pass on the scope of the present invention to those skilled in the art.
The invention provides generate graphene by the ionization carbon atom above magnetic texure to cause generated stone
Black alkene is suspended in above the magnetic texure and manufactured from ionization source of carbon atoms the improved system and method for graphene.
Figure 1A depicts the example graphite alkene for generating room 102 and graphene generation room 104 including plasma and manufactures system
System 100.The plasma generation room 102 can be so-called hot plasma generation room, the generation of so-called cold plasma
Room or the plasma generation room that plasma is produced at any required temperature.The graphene generation room 104 can have
There are multiple seed cells, including growth part 104a, one or more optional processing part 104b and at least one recovery section
104c.By such as methane (CH of source of carbon atoms 1064), inert gas 107 such as helium, argon gas, Krypton, neon or xenon and ionization
Such as radio frequency of the energy 108 (RF) or high pressure (HV) source are supplied to the plasma generation room 102, thus using Stress control system
110 (such as vavuum pumps) of uniting are produced generates room with plasma necessary to obtaining the mean free path collided between molecule
Absolute pressure in 102, it is enough to produce glow discharge and the distribution of uniform plasma in plasma generation room 102.
Leaving the gained carbon atom cloud 114 of the plasma generation room 102 makes graphene film 116 from the position of graphene seed 118
Continuously generate, the graphene seed 118 is provided by graphene seed source 132 and is incorporated into the graphene and generated in room 104.
The diamagnetism graphene film 116 continuously grown is suspended in the top of magnetic texure 112 and is moved through graphene generation room, Zhi Daoqi
The graphene generation room 104 is left as example a roll of graphene 120 of the graphite ene product of recovery.
It would be recognized by those skilled in the art that many different types of source of carbon atoms can be used in conjunction with the invention, such as
CH4、CO2, CO etc..In preferred embodiments, the source of carbon atoms by only having carbon atom to simplify the stripping of atom
From.It will also be appreciated by the skilled artisan that the various ionization energy can be used, such as 2.4Ghz (microwave) signal.In addition, this
Art personnel recognize, can use various graphene seed sources, pyrolytic graphite (HOPG) source of such as high-sequential, wherein
Can be using any one of various types of automatic, automanual or manual methods, to be generated in the graphene
Required position in room 104 provides graphene seed 118 by graphene seed source 132.
As shown in Figure 1A, because for manufacturing the scrolling method of graphene roll 120, the graphene film 116 can be drawn
Under graphene generation room 104, thus control system (not shown) control the rolling rate of graphene roll 120, with corresponding to
The growth rate of the graphene film 116.Ratio of the control system also by controlling source of carbon atoms 106 and inert gas 107
Example, the absolute pressure in room 102 and the energy density of the chamber interior produced by the ionization energy 108 and thus described
Glow discharge and plasma in plasma generation room 102 are distributed to control the growth rate of the graphene film 116.It is logical
Often, control system can be the closed-loop control system for being related to sensor etc., to measure the parameter of controlled system 100.
In an alternative arrangement, carbon atom beam can be accelerated in a usual manner, it is then poly- using electricity and/or magnetic lenses
It is burnt.Furthermore, it is possible to which carbon atom beam is enable into different atoms by the non-uniform magnetic-field acted in the mode similar to spectrometer
Separation (for example, for atom species and isotope purifying purpose), to form the pure source beam of (carbon atom) isotropism, thus
To specific graphene composition.
In another alternative arrangement, can use atomic beam on the growing edge of the graphene film interlock other classes
The atom of type is to manufacture composite, and extraordinary image braiding blanket is the same.Similarly, television raster technology can be used.It is many this
The similar techniques of sample are all possible, as long as including enough graphenes in this composite, thus the graphene of material
Part will enable it to be suspended in above magnetic texure, and be therefore moved through and leave graphene generation room, such as only graphite
The film of alkene.
In another alternative arrangement, the graphene film of generation is only bonding agent, and it is included so that any other have
The material of meaning is processed by the present invention so that material suspends and generates room by graphene.
The graphene generate room 104 growth part 104a and recovery section 104c between there may be one or
Multiple processing part 104b.Various types of processing of the graphene film 116 are all possible, including such as laser is drawn and led
Electric board traces, apply using stereolithography other atoms and come Nanostructure fabrication and nano-machines, activated carbon and mix miscellaneous
Matter is to manufacture semiconductor etc..
Under one kind arrangement, the magnetic texure 112 is made up of multiple magnetized permanent-magnet material sources so that the magnetic junction
The magnetic field intensity in the source of structure 112 is most strong near the position of the graphene seed 118, and the source of the magnetic texure 112
Magnetic intensity gradually die down, until graphene generate room 104 recovery section 104c end near it is most weak, cause the stone
The downward gradient of black alkene film 116, it causes gravity to be moved through the graphene film and leave the graphene generation room
104.Under another arrangement, the magnetic texure 112 includes electromagnet or electrical permanent-magnet, thus changes along the magnetic texure
112 magnetic field intensity, causes gravity to be moved through the graphene film 116 and leave the graphene generation room 104.Again
Under one kind arrangement, the control system changes graphene film 116 by controlling along the magnetic field intensity of the magnetic texure 112
Gradient, to control and (that is, accelerate or slow down) graphene film 116 to be moved through and to leave the graphene generation room 104
Speed.Under another arrangement, one or more gradients of one or more parts of the magnetic texure 112 are by the control
Control to system mechanics processed, to control Action of Gravity Field, so as to control the graphene film 116 to be moved through and leave the stone
Black alkene generates the speed of room 104.
Figure 1B depicts another example graphite alkene manufacture system 100, and it is similar to Figure 1A graphene manufacture system,
Except graphene generation room is inclined so that gravity can be used to be moved through graphene film and leave graphene generation room
104.The purpose of the curvature is to produce negative-feedback to enter ionisation chamber to prevent the film from backward developing.The system 100 it is other
Variant includes second magnetic texure 122, and it can be used for the height for controlling the graphene film 116, particularly in process
In, and in the other parts such as recovery section 104c of room 104 during.As illustrated, cutting mechanism 124 will be described
Graphene film 116 cuts into the graphite ene product of recovery, such as one folded graphene film 126.
Optional shielding part 128 is also show in Figure 1B, it is used to prevent the ionization energy from leaving the plasma generation
Room 102 simultaneously enters the graphene growth room 104.Or, the plasma generation can be selected based on waveguide cut-off characteristic
Opening between room 102 and the graphene growth room 104, not allow signal.Optional getter 130 is also show, its
It can be used for removing atomic hydrogen from plasma generation room 102.
It would be recognized by those skilled in the art that the magnetic texure 112 (and alternatively the can be produced using magnetization technology
Two magnetic texures 122) magnetic signature, it contributes to the movement and the growth characteristics that control the graphene film 116.Example
Such as, the outward flange of the magnetic texure 112 along its length can show the field strength more stronger than core so that the graphite
Alkene film can be more easily held in the border of the magnetic texure 112.Fig. 2A depicts exemplary bowl-type magnetic texure 112
Cross section, it is alternately the bowl-type magnetic field 202 of magnetic texure 112 as shown in Figure 2 B.Fig. 2 C are depicted with gradient
Exemplary magnetic structure 112 length side view, the gradient is moved through the graphite with the graphene film 116
Alkene generates room 104 and reduced.This design is intended to support and initially produces graphene film 116 by seed 118, to prevent seed to institute
Plasma generation room 102 is stated to grow.Fig. 2 D and 2E depict the exemplary magnetic structure 112 similar to Fig. 2 C, its have by
The potential barrier magnetic field 204 that potential barrier magnetic field sources 206 are produced.The potential barrier magnetic field 204 can be used for preventing or limit the graphene film
The lower section of 116 magnetropism structure 112 is mobile, such as during the starting stage that graphene film grows, wherein may expect the graphite
Alkene seed 118 is static or substantially static.
It would be recognized by those skilled in the art that various types of potential barrier magnetic fields with various magnetic field shapes can be used
204, it can use electromagnet and/or permanent magnet to produce, wherein can reduce or remove or not so change potential barrier magnetic field,
To control or prevent the movement of graphene film 116.
Fig. 3 A depict example graphite alkene seed 300.
Fig. 3 B, which are depicted from the position 118 introducing seed in the graphene generation room 104, grows the graphene
The top view of film 116, wherein the graphene film 116 is moving away the position 118 and is being suspended in the graphene life
Into the top of the magnetic texure 112 of room 104.As illustrated, the growth part 104a of room 104 is once generated in the graphene
Outside, can use laser 302 to repair the graphene film 116, to obtain required shape.Finally, growing edge will be approached
The shape at planar growth edge.
It would be recognized by those skilled in the art that the various geometries of graphene are all possible, such as there are different spirals
The carbon fiber nanotube of (inclination) angle etc., wherein seed have the atom and atom tile of requirement along cylinder
(tile).It will also be appreciated by the skilled artisan that according to the invention, it is possible to use different types of atom such as boron replaces carbon former
Son.It would be recognized by those skilled in the art that the seed can manufacture its hexgonal structure with initial orientation at the preferred angle
The film of growth.
Fig. 4 depicts the illustrative methods 400 according to the present invention.Methods described 400 includes five steps.The first step 402
It is to provide source of carbon atoms and inert gas to room.Second step 404 is to provide the ionization energy to the room.3rd step 406 is control
The source of carbon atoms and the ratio of the inert gas, the indoor absolute pressure and the interior produced by the ionization energy
Energy density and thus indoor glow discharge and plasma distribution.4th step 408 is will to be produced by glow discharge
The atomic carbon of ionization be supplied to seed, to manufacture graphene film, and the 5th step 410 be to continue with to the graphene film provide by
The atomic carbon that glow discharge is produced is to grow the film.
According to an aspect of the present invention, magnetic field structure is configured to produce to the steep magnetic field for being enough to make graphene film suspend
Gradient.Under one kind arrangement, steep magnetic field gradient is produced by using the alternately polarity pattern of magnetic field sources.Fig. 5, which is depicted, to be included
The exemplary magnetic structure of two dimension (such as grid) array of alternately polarity magnetic source, it can be magnetized to magnetisable material
Discrete magnets or magnetic source.Under one kind arrangement, the size or magnetic grid distance of each magnetic source are about the graphene film suspended
Minimum dimension 75%, it is or smaller.Under another arrangement, the graphene seed for starting methods described would be about
The 125% or bigger of magnet grid distance.Can use less seed, but must mechanical support, until their edges
Growth is larger, it is sufficient to more than used magnet grid distance.At that time, seed will disconnect with graphene film, and will completely by
Magnet lattice support (that is, it will be suspended in above grid).
In order to reach the purpose of support seed, very small or thin magnet grid distance, and remaining grid can be used
Lattice, which have, to be enough to support the thicker grid of manufactured film.
Magnetic field sources according to the magnetic texure on the other hand, is constituted can have except with the graphene film phase interaction
Shape outside flat surfaces.For example, magnet can be circular, cone or even sharp part.
According to another aspect of the present invention, each magnetic source will have pole piece associated there, and the pole piece can have
The flat interacted with the magnetic source, wherein the opposite end of the pole piece narrows to the point for pointing to the graphene film.
Therefore, the graphene film will undergo the enhanced gradient for concentrating the place from each magnetic source surface to produce by the pole piece.
According to another aspect of the present invention, graphene seed or starting graphite alkene film are partially disposed in and the magnetic
On the associated pedestal of structure, wherein the pedestal is used to support the seed or film part, until enough growths increase it
Size so that obtained graphene film is suspended in above the magnetic texure.The pedestal can be round, for example, shape is non-
Often as ball, or it can be one group of prongs for being intended to support the seed/film.Under one kind arrangement, it can use multiple
Pole piece manufactures the pedestal, and the magnetic field that multiple magnetic sources are produced gathers grid distance less than magnetic grid by the multiple pole piece
On the array smaller in the physical sense of array.
Although it have been described that the specific embodiment of the present invention, but it is to be understood that the invention is not restricted to this, because
Those skilled in the art can be improved, in particular according to foregoing teaching.
Claims (20)
1. a kind of system for being used to generate graphene in magnetic field, including：
Plasma generator, it is configured to produce multiple ionization carbon atoms, and the multiple ionization carbon atom is used as carbon
Atomic cloud leaves the plasma generator；
Graphene generates room, its be coupled to the plasma generator and being configured to left in the carbon atom cloud it is described
The carbon atom cloud is received during plasma generator, the graphene generation room is configured to former by the multiple ionization carbon
Son generation graphene film, the graphene generation room includes：
Growth part；
Recovery section；With
Magnetic texure, it includes the two-dimensional array of alternately polarity magnetic source, and the magnetic texure produces to have and is enough to make the graphite
Alkene film is suspended in the magnetic field of the magnetic field gradient above the magnetic texure, and the magnetic texure extends to institute from the growth part
State recovery section；With
Graphene seed source, it is configured to provide graphene seed to the graphene in the growth part for generating room
The magnetic field above initial position, the graphene film generates above the magnetic field so that the graphene film suspends
Above the magnetic field, it is diamagnetic to be attributed to the graphene film, and the carbon atom cloud makes the graphene film of the suspension
Continuously grown from the initial position, the graphene generation room is configured such that the graphene film of the suspension moves away institute
State initial position and room is generated by the graphene, given birth to until it leaves the graphene as the graphite ene product of recovery
Into the recovery section of room.
2. system according to claim 1, it also includes：Source of carbon atoms.
3. system according to claim 2, wherein the source of carbon atoms is included in methane, carbon dioxide or carbon monoxide
It is at least one.
4. system according to claim 2, wherein the chemical formula of the source of carbon atoms only has a carbon atom.
5. system according to claim 1, it also includes：Inert gas.
6. system according to claim 5, wherein the inert gas is included in helium, argon gas, Krypton, neon or xenon
At least one.
7. system according to claim 1, it also includes：Ionize the energy.
8. system according to claim 7, wherein the ionization energy source includes one of radio frequency source or high-voltage power supply.
9. system according to claim 8, wherein the radio frequency source is microwave signal.
10. system according to claim 1, it also includes：
At least one control system, sets the control system to control the ratio of the source of carbon atoms and the inert gas,
Control absolute pressure；And control by it is described ionization the energy produce plasma energy density, with control glow discharge and
The distribution of the plasma, the glow discharge produces the multiple ionization carbon atom.
11. system according to claim 10, wherein what is controlled the absolute pressure and collided with obtaining between molecule is averaged
Free path, to produce being uniformly distributed for the glow discharge and the plasma.
12. system according to claim 1, wherein the magnetic texure includes permanent-magnet material.
13. system according to claim 12, wherein the permanent-magnet material is magnetized so that the magnetic field intensity in the magnetic field
It is most strong near the initial position of the graphene seed, and the magnetic field intensity in the magnetic field gradually dies down, until it is in institute
It is most weak near the end for the recovery section for stating graphene generation room.
14. system according to claim 1, wherein the magnetic texure includes one kind in electromagnet or electrical permanent-magnet.
15. system according to claim 1, it also includes：At least one is used for the laser for repairing the graphene film.
16. system according to claim 1, the graphene generation room also includes：Second above the graphene
Individual magnetic texure.
17. system according to claim 1, wherein the outward flange of the magnetic field along its length is showed than the magnetic field
The stronger field strength of core.
18. system according to claim 1, it also includes：Potential barrier magnetic field sources.
19. system according to claim 1, the graphene generation room also includes：
Part is processed, it is generated between the growth part and the recovery section of room in the graphene, for processing
State graphene film.
20. system according to claim 19, wherein the processing, which includes laser, draws conductive trace, using stereolithography
Apply one kind in other atoms, activated carbon or poly-doped impurity.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462025691P | 2014-07-17 | 2014-07-17 | |
| US62/025,691 | 2014-07-17 | ||
| PCT/US2015/040473 WO2016011095A1 (en) | 2014-07-17 | 2015-07-15 | System for producing graphene in a magnetic field |
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| Publication Number | Publication Date |
|---|---|
| CN107074550A true CN107074550A (en) | 2017-08-18 |
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| CN201580050017.0A Withdrawn CN107074550A (en) | 2014-07-17 | 2015-07-15 | System for manufacturing graphene in magnetic field |
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| CN (1) | CN107074550A (en) |
| WO (1) | WO2016011095A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109956462A (en) * | 2019-03-14 | 2019-07-02 | 北京航空航天大学 | Carbon nano-particle preparation system, carbon nano-particle aerosol generate system and method |
| CN110872116A (en) * | 2018-09-04 | 2020-03-10 | 新奥科技发展有限公司 | Preparation device and preparation method of graphene |
| CN114726256A (en) * | 2022-02-25 | 2022-07-08 | 电子科技大学 | Device and method for driving magnetic suspension graphene ship to move in long range by utilizing laser |
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|---|---|---|---|---|
| US20120090982A1 (en) * | 2010-10-15 | 2012-04-19 | Cedar Ridge Research, Llc | System and method for producing graphene |
| CN103184425A (en) * | 2013-03-13 | 2013-07-03 | 无锡格菲电子薄膜科技有限公司 | Method for growing graphene film by using low-temperature chemical vapor deposition |
| CN103695869A (en) * | 2013-12-20 | 2014-04-02 | 上海中电振华晶体技术有限公司 | Preparation method of graphene film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9212063B2 (en) * | 2010-10-15 | 2015-12-15 | Cedar Ridge Research, Llc | System for producing graphene in a magnetic field |
| KR101954999B1 (en) * | 2013-01-14 | 2019-03-06 | 캘리포니아 인스티튜트 오브 테크놀로지 | Method and system for graphene formation |
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2015
- 2015-07-15 CN CN201580050017.0A patent/CN107074550A/en not_active Withdrawn
- 2015-07-15 WO PCT/US2015/040473 patent/WO2016011095A1/en active Application Filing
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| US20120090982A1 (en) * | 2010-10-15 | 2012-04-19 | Cedar Ridge Research, Llc | System and method for producing graphene |
| CN103184425A (en) * | 2013-03-13 | 2013-07-03 | 无锡格菲电子薄膜科技有限公司 | Method for growing graphene film by using low-temperature chemical vapor deposition |
| CN103695869A (en) * | 2013-12-20 | 2014-04-02 | 上海中电振华晶体技术有限公司 | Preparation method of graphene film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110872116A (en) * | 2018-09-04 | 2020-03-10 | 新奥科技发展有限公司 | Preparation device and preparation method of graphene |
| CN109956462A (en) * | 2019-03-14 | 2019-07-02 | 北京航空航天大学 | Carbon nano-particle preparation system, carbon nano-particle aerosol generate system and method |
| CN114726256A (en) * | 2022-02-25 | 2022-07-08 | 电子科技大学 | Device and method for driving magnetic suspension graphene ship to move in long range by utilizing laser |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016011095A1 (en) | 2016-01-21 |
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