CN1944308B - Method for depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate - Google Patents
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- CN1944308B CN1944308B CN200610154424A CN200610154424A CN1944308B CN 1944308 B CN1944308 B CN 1944308B CN 200610154424 A CN200610154424 A CN 200610154424A CN 200610154424 A CN200610154424 A CN 200610154424A CN 1944308 B CN1944308 B CN 1944308B
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 239000011521 glass Substances 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 63
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000000376 reactant Substances 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910018540 Si C Inorganic materials 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 241001584775 Tunga penetrans Species 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
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- 230000036962 time dependent Effects 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The process of depositing hydrogenised non-crystal silicon-carbon alloy film on glass substrate is one RF conductive coupling plasma strengthened chemical vapor deposition process, which includes thesteps of cleaning glass substrate and setting glass substrate into the reaction chamber, vacuumizing the reaction chamber, heating the substrate, reacting H2 diluted SiH4 and CH4 gas in the CH4/(CH4+SiH4) molar ratio of 0-1 through RF glow discharge and depositing hydrogenised non-crystal silicon-carbon alloy film on the glass substrate. The present invention has preparation process, and the prepared hydrogenised non-crystal silicon-carbon alloy film has high Si-C bond content, high uniformity, optical band gap stabilized at 2.5 eV and high conductivity and may be used widely LCD, solar cell,light sensitive transistor, etc.
Description
Technical field
The present invention relates to the method for depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate.
Background technology
Non-crystal silicon carbon alloy (a-Si
1-xC
x: H) because its excellent performance is used very extensive at aspects such as photodiode (LED), solar cell, the panchromatic demonstrations of transmitter and plane.The superior part of this material just is that its energy gap can be along with the variation of the content of carbon in the film and hydrogen and change.
The preparation method of relevant non-crystal silicon carbon alloy firm is a lot, and sputtering method (sputtering), pulsed laser deposition method (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition equipment (MOCVD), hot-wire chemical gas-phase deposition (HFCVD) and plasma reinforced chemical vapour deposition (PECVD) or the like are arranged.High vacuum preparation method commonly used for example MBE and PLD can prepare high-quality film usually, but film growth rate is lower comparatively speaking.And utilize MOCVD and PECVD method, though film growth rate is very fast, film is even inadequately in the time of large-area film deposition, cataphracted color fringe can occur.Wherein most of PECVD method deposition a-Si
1-xC
x: the H film all is to adopt capacitive coupling to produce plasma body (CCP).Also promptly in the CCP-CVD reaction chamber, electronics is done translational motion between two parallel plate electrodes, and condenser coupling type electric field forms ionization collisions by accelerated electron, is deposited on after the source of the gas collision is decomposed, reacted to each other and forms film on the substrate.Because the distance between the parallel plate electrode is shorter, the plasma density that produces is just lower, and the distance that electronics and plasma body quicken is also just shorter comparatively speaking, the result who causes is exactly that probability of collision between electronics and the plasma body is smaller, the rate of decomposition of reactant gases will be lower, just has many intermediate products and finally be deposited on the substrate; Moreover the pick-up period is short, and the energy that plasma body obtains is also lower, a little less than the corrasion to film, can have the key of some weak bonds and distortion in the film, and the quality that causes institute's deposit film is not fine.Thereby various high-density plasma sources have caused everybody interest, and it has been carried out deep research at high-density Si integrated circuit connection.For example plasma body (ICP) density of electron cyclotron resonace (ECR) and jigger coupling generation is all～10
12Cm
-3About, particularly the ICP source not only has superiority aspect the big area deposition, and in super large-scale integration (ULSI) and thin film transistor (TFT) technology, can obtain very high etch rate because of its plasma density is high, thereby sedimentary film quality is better.This method is exactly in the ICP-CVD reaction chamber, and (ICP) produces and keep highdensity plasma body by inductively coupled plasma reactor, and plasma body under low pressure directly touches the surface of substrate in the reaction chamber with the form of high-density mixing gas.When radio-frequency current can produce an AC magnetic field during by coil (coil), this AC magnetic field promptly produces time dependent electric field via the induction coupling.Jigger coupling type electric field forms ionization collisions by accelerated electron, and the gas that feeds reaction chamber bumps and resolves into plasma body afterwards, is deposited on after the plasma reaction and forms the silicon-carbon alloy film on the substrate.Because the direction of induction field is a swirl type, therefore electronics just quickens with the track that circles round, make the electronics very long distance of can moving because of circling round can not run into reaction chamber inwall or electrode, so just can under low-pressure state (several mT), produce highdensity plasma body.Also because of the very long distance of can moving before arriving substrate of circling round, the probability of collision between electronics and the high density plasma is just bigger like this for same highdensity plasma body, and the decomposition of gas will be compared thoroughly.Because plasma body will experience the cyclotron motion of segment length's time before arriving substrate, thereby finally be deposited on the substrate with regard to there being time enough to reassemble into only one-tenth key mode between the plasma, and the nucleus that has been deposited on before on the substrate also had time enough to grow up gradually before more plasma body arrives substrate.And because run duration is long, the ICP plasma body can obtain higher energy before arriving substrate, and is more intense to the film corrasion that is deposited on the substrate, can etch away the key of distortion more weak in the film.Comprehensive above Several Factors, the a-Si of ICP-CVD method preparation
1-xC
x: the H film has preferable microstructure, and film quality is good.
People such as A.Raveh adopt inductively coupled plasma to strengthen chemical Vapor deposition process (ICP-CVD) and prepared crystalline silicon carbon alloy film on stainless steel substrates.This silicon carbide with high rigidity, high heat conductance, high advantages such as resistance of oxidation is deposited on and can be used as high-temperature material and anti-abrasive material on the stainless steel substrate, but also can be used for military fields such as the fusion reactor and the nuclear reactor.And people such as Takeshita are preparing nanocrystalline carborundum films under with the substrate temperature that relatively other method is lower with the ICP-CVD method on the silicon substrate.The crystalline state silicon carbide that is deposited on the Si substrate has advantages such as high electron mobility, high saturated electron drift velocity, high critical breakdown electric field, be adapted to make high temperature, high-power high-frequency device, as the substrate of other thin-film material (as AlN, GaN, diamond) and the mask material of X ray, and the aspects such as coating material that are used in photocell, intelligence sensor and field-emission cathode array.
At present, along with science and technology development, non-crystal silicon carbon film is in the electron device and circuit of active matrix liquid crystal display, at solar cell, a lot of application is being arranged aspect phototransistor, photodiode and transmitter or the like, and these application are all relevant with glass substrate.On the other hand, semicon industry has very most thin-film material to prepare on glass substrate at present, thereby exploitation technology of deposited semiconductor film on glass substrate also is subjected to the problem of very big concern just in the world.Adopt the PECVD method mostly at deposition on glass non-crystal silicon carbon alloy firm, and all be to prepare film at present with capacitance coupling type (CCP) glow discharge deposition technology, as mentioned above, adopt the structurally ordered property of the sedimentary silicon carbon film of CCP-CVD method and film quality all to remain further to be improved.And to obtain stable performance, on glass substrate, deposit the carbon silicon film that structure is more orderly, performance is more excellent its widespread use is seemed particularly important.
Summary of the invention
The object of the present invention is to provide a kind of on glass substrate the method for depositing hydrogenized non-crystal silicon carbon alloy film.
Of the present invention on glass substrate the method for depositing hydrogenized non-crystal silicon carbon alloy film, employing be that radio-frequency inductance coupling plasma strengthens chemical Vapor deposition process, the step of this method is as follows:
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 3 * 10
-2～2 * 10
-3Pa, heated substrates, making substrate temperature is 150～300 ℃, to use H
2Be diluted to volumetric concentration and be 5～20% SiH
4With volumetric concentration be 10～40% CH
4Gas is reactant gas source, CH
4/ (CH
4+ SiH
4) molar ratio range is 0～1, these two kinds of sources of the gas are controlled the surge chamber of input unit respectively by under meter, two kinds of sources of the gas are introduced in the vacuum reaction chamber with flow 15～50sccm behind the surge chamber thorough mixing, at 2～10Pa pressure, under radio frequency power 50W～300W, produce aura and react depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate.
More firm for hydrogenized non-crystal silicon carbon alloy film is combined with substrate, usually,, can feed 15～35sccm argon gas to reaction chamber earlier before reaction chamber feeds reactant gas source, glow discharge 30～60min makes further clean to substrate.
The inventive method is deposited on the hydrogenized non-crystal silicon carbon alloy film on the glass substrate, and its chemical formula is a-Si
1-xC
x: H, 0≤x≤1.By regulating CH
4/ (CH
4+ SiH
4) mol ratio, can change the carbon content in the film, thereby obtain having the film of different optical band gaps.Be deposited on the thickness of the hydrogenized non-crystal silicon carbon alloy film on the glass substrate, by the growth time decide.
The present invention compares the useful effect that has with background technology:
1, the hydrogenized non-crystal silicon carbon alloy film of radio-frequency inductance coupling plasma enhancing chemical Vapor deposition process preparation is deposited on the glass substrate, can be used for electron device, solar cell, phototransistor, photodiode and transmitter of active matrix liquid crystal display or the like.
2, preparation method of the present invention is simple, the carbon content of non-crystal silicon carbon alloy firm and the CH of setting
4/ (CH
4+ SiH
4) gas ratio is very approaching, is beneficial to the control of component in the film.
3, adopt radio-frequency inductance coupling plasma to strengthen chemical Vapor deposition process Si-C linkage content height in the sedimentary hydrogenized non-crystal silicon carbon alloy film on glass substrate, uniformity of film is good, can be so that the optical band gap of non-crystal silicon carbon alloy firm be basicly stable in about 2.5eV, and the specific conductivity height.
Description of drawings
Fig. 1 is the electromicroscopic photograph that is deposited on the hydrogenized non-crystal silicon carbon alloy film on the glass substrate of the present invention;
Wherein scheming a is film surface appearance; Figure b is the thin-membrane section pattern.
Embodiment
The invention will be further described below in conjunction with embodiment.
Embodiment 1
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 3 * 10
-2Pa, heated substrates, making substrate temperature is 250 ℃; Feed the 15sccm argon gas then, glow discharge 30min makes further clean to substrate; To use H
2Be diluted to concentration and be 15% SiH
4With concentration be 40% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.64, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 15sccm behind the surge chamber thorough mixing, at 2Pa pressure, under the radio frequency power 250W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.6, its performance sees Table 1.
Embodiment 2
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 1 * 10
-2Pa, heated substrates, making substrate temperature is 200 ℃; Feed the 25sccm argon gas then, glow discharge 40min makes further clean to substrate; To use H
2Be diluted to concentration and be 10% SiH
4With concentration be 20% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.75, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 20sccm behind the surge chamber thorough mixing, at 2.5Pa pressure, under the radio frequency power 250W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.72, its performance sees Table 1.
Embodiment 3
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 8 * 10
-3Pa, heated substrates, making substrate temperature is 250 ℃; Feed the 25sccm argon gas then, glow discharge 40min makes further clean to substrate; To use H
2Be diluted to concentration and be 10% SiH
4With concentration be 40% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.5, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 25sccm behind the surge chamber thorough mixing, at 3Pa pressure, under the radio frequency power 200W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.5, its performance sees Table 1.
Embodiment 4
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 7 * 10
-3Pa, heated substrates, making substrate temperature is 200 ℃; Feed the 20sccm argon gas then, glow discharge 50min makes further clean to substrate; To use H
2Be diluted to concentration and be 10% SiH
4With concentration be 40% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.35, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 25sccm behind the surge chamber thorough mixing, at 3Pa pressure, under the radio frequency power 200W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.33, its performance sees Table 1.
The electromicroscopic photograph that is deposited on the hydrogenized non-crystal silicon carbon alloy film on the glass substrate as shown in Figure 1, uniformity of film is good as seen from the figure.
Embodiment 5
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 5 * 10
-3Pa, heated substrates, making substrate temperature is 150 ℃; Feed the 30sccm argon gas then, glow discharge 50min makes further clean to substrate; To use H
2Be diluted to concentration and be 5% SiH
4With concentration be 10% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.5, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 30sccm behind the surge chamber thorough mixing, at 4Pa pressure, under the radio frequency power 150W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.51, its performance sees Table 1.
Embodiment 6
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 5 * 10
-3Pa, heated substrates, making substrate temperature is 150 ℃; Feed the 25sccm argon gas then, glow discharge 60min makes further clean to substrate; To use H
2Be diluted to concentration and be 5% SiH
4With concentration be 20% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.5, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 35sccm behind the surge chamber thorough mixing, at 5Pa pressure, under the radio frequency power 100W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.5, its performance sees Table 1.
Embodiment 7
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 2 * 10
-3Pa, heated substrates, making substrate temperature is 300 ℃; Feed the 35sccm argon gas then, glow discharge 60min makes further clean to substrate; To use H
2Be diluted to concentration and be 20% SiH
4With concentration be 20% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0.13, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 40sccm behind the surge chamber thorough mixing, at 7Pa pressure, under the radio frequency power 50W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0.12, its performance sees Table 1.
Embodiment 8
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 6 * 10
-3Pa, heated substrates, making substrate temperature is 300 ℃; Feed the 25sccm argon gas then, glow discharge 50min makes further clean to substrate; To use H
2Be diluted to concentration and be 10% SiH
4With concentration be 10% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 1, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 50sccm behind the surge chamber thorough mixing, at 10Pa pressure, under the radio frequency power 300W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=1, its performance sees Table 1.
Embodiment 9
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 9 * 10
-3Pa, heated substrates, making substrate temperature is 250 ℃; Feed the 20sccm argon gas then, glow discharge 40min makes further clean to substrate; To use H
2Be diluted to concentration and be 10% SiH
4With concentration be 10% CH
4Gas is reactant gas source, and these two kinds of sources of the gas are controlled the surge chamber of input unit, CH respectively by under meter
4/ (CH
4+ SiH
4) molar ratio range is that 0, two kind of source of the gas is introduced in the vacuum reaction chamber with flow 25sccm behind the surge chamber thorough mixing, at 3Pa pressure, under the radio frequency power 200W, deposits 100 minutes, forms a-Si on glass substrate
1-xC
x: the H film, x=0, its performance sees Table 1.
The performance of table 1 hydrogenized non-crystal silicon carbon alloy film
Claims (2)
1. the method for depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate is characterized in that adopting radio-frequency inductance coupling plasma to strengthen chemical Vapor deposition process, may further comprise the steps:
To put into the reaction chamber that radio-frequency inductance coupling plasma strengthens chemical vapor deposition unit after the glass substrate cleaning, reaction chamber vacuum tightness is evacuated to 3 * 10
-2～2 * 10
-3Pa, heated substrates, making substrate temperature is 150～300 ℃, to use H
2Be diluted to volumetric concentration and be 5～20% SiH
4With volumetric concentration be 10～40% CH
4Gas is reactant gas source, CH
4/ (CH
4+ SiH
4) molar ratio range is 0.13～0.75, these two kinds of sources of the gas are controlled the surge chamber of input unit respectively by under meter, two kinds of sources of the gas are introduced in the vacuum reaction chamber with flow 15～50sccm behind the surge chamber thorough mixing, at 2～7Pa pressure, under radio frequency power 50W～300W, produce aura and react depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate.
2. according to claim 1 on glass substrate the method for depositing hydrogenized non-crystal silicon carbon alloy film, it is characterized in that before reaction chamber feeds reactant gas source, feed 15～35sccm argon gas to reaction chamber earlier, glow discharge 30～60min makes further clean to substrate.
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| CN101660132B (en) * | 2009-09-28 | 2011-06-01 | 西安交通大学 | Method for preparing silicon-carbon hydride film by magnetron sputtering |
| CN101660131B (en) * | 2009-09-28 | 2011-03-09 | 西安交通大学 | Method for preparing hydrogenated silicon film by utilizing magnetron sputtering |
| CN101748393B (en) * | 2009-12-16 | 2012-09-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating control method of production line equipment and device |
| CN104051243A (en) * | 2013-03-12 | 2014-09-17 | 中国科学院宁波材料技术与工程研究所 | Preparation method of amorphous silicon carbide thin film and amorphous silicon carbide thin film transistor |
| CN107974665A (en) * | 2016-10-21 | 2018-05-01 | 苏州今道创业投资有限公司 | Hydrogeneous amorphous carbon film and preparation method thereof |
| CN108069393A (en) * | 2016-11-14 | 2018-05-25 | 中国科学院上海硅酸盐研究所 | A kind of hydrogenation Copper thin film and preparation method thereof |
| CN115230275B (en) * | 2022-07-27 | 2023-12-19 | 河南华福包装科技有限公司 | Environment-friendly recyclable four-layer composite paper high-barrier package and preparation method thereof |
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