CN103266306B - A kind of PVD technology prepares the method for Graphene or ultrathin carbon films - Google Patents
A kind of PVD technology prepares the method for Graphene or ultrathin carbon films Download PDFInfo
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- CN103266306B CN103266306B CN201310190642.8A CN201310190642A CN103266306B CN 103266306 B CN103266306 B CN 103266306B CN 201310190642 A CN201310190642 A CN 201310190642A CN 103266306 B CN103266306 B CN 103266306B
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Abstract
The invention provides a kind of method that PVD technology prepares Graphene or ultrathin carbon films, comprise the following steps: first substrate is put in the substrate frame of deposit cavity, aura cleaning is carried out to the surface of substrate; Then ar gas environment, vacuum tightness 0.5Pa ~ 1Pa, 70 DEG C ~ 100 DEG C, under the condition of substrate bias-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas; Open anode layer ion source to mixed gas ionization, during ionization, the voltage of anode layer ion source is 300 ~ 500V, and acetylene is produced containing carbocation by after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate; Anneal after having deposited 1 ~ 2h under vacuum, can obtain Graphene or ultrathin carbon films after having annealed on matrix surface.Method provided by the present invention can meet the preparation to extensive, that thickness is homogeneous Graphene or ultrathin carbon films, has important prospects for commercial application.<!--1-->
Description
Technical field
The present invention relates to a kind of method that PVD technology prepares Graphene or ultrathin carbon films, belong to thin-film material technical field.
Background technology
Carbon is a kind of element that nature extensively distributes, and exists in a variety of forms, common are graphite, decolorizing carbon and diamond, and the carbon nanotube of discovered in recent years, Graphene etc.Performance between the carbon of different shape has very big-difference, but to trace it to its cause be because carbon can form several stable hydridization form, namely sp
1hydridization, sp
2hydridization and sp
3hydridization.Graphene refers to mono-layer graphite synusia, only has an atomic size thick, by sp
2the cellular crystalline structure of the carbon atom close-packed arrays of hydridization.C-C in Graphene is about as 0.142nm.There are three σ keys in each lattice, connect very firm, define stable hexagon shape.Image, Graphene is exactly by the crystal of monolayer carbon atom tightly packed one-tenth bi-dimensional cellular shape, and in addition, except proper single-layer graphene, double-deck and minority layer graphite synusia is also classified as Graphene category in a broad sense.
Graphene is owing to having good physics strangeness and electrical properties, very wide in the associated materials application aspect prospect of semiconductor function device: Graphene has excellent optical property, and theoretical and experimental result shows, single-layer graphene light transmission rate is 97.7%; The interference that electronics in Graphene is subject to is little, and not easily scattering occurs when transmitting in Graphene, mobility can reach 2 × 10
5cm
2/ (Vs), is about 140 times of silicon electronic mobility.The method preparing Graphene at present mainly contains (one) solid phase method: as mechanically peel method, and Graphene is separated from highly oriented pyrolytic graphite by mechanically peel method at first, but the method output little and size difficulty controls, and is only applicable to fundamental research among a small circle; (2) liquid phase method: as oxidation reduction process, ultrasonic dispersion etc., but also do not have crystallization degree high or be difficult to the shortcoming such as purifying and transfer by Graphene prepared by these class methods; (3) chemical Vapor deposition process: if chemical Vapor deposition process is in conjunction with crystallization of the dissolution and precipitation method (CVD), this method has larger advantage on the Graphene preparing individual layer, but only there is a very little part to separate out after the carbon quenching dissolved by CVD method and form Graphene, thickness is wayward, and CVD method needs the high temperature of more than 1000 DEG C and can produce waste gas, is unfavorable for energy-conserving and environment-protective; In addition ion implantation is also prepare a kind of comparatively effective method of Graphene at present in conjunction with thermal treatment-cooling liberation method.
Summary of the invention
The invention provides a kind of method that PVD technology prepares Graphene or ultrathin carbon films, solve the deficiency in background technology, the method can meet the preparation to extensive, that thickness is homogeneous Graphene or ultrathin carbon films, has important prospects for commercial application.
Realizing the technical scheme that above-mentioned purpose of the present invention adopts is:
PVD technology prepares a method for Graphene or ultrathin carbon films, comprises the following steps: first put in the substrate frame of deposit cavity by substrate, carries out aura cleaning to the surface of substrate; Afterwards ar gas environment, vacuum tightness 0.5Pa ~ 1Pa, 70 DEG C ~ 100 DEG C, under the condition of substrate bias-50V ~-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas; Open anode layer ion source to mixed gas ionization, during ionization, the voltage of anode layer ion source is 300 ~ 500V, and acetylene is produced containing carbocation by after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate; Anneal after having deposited 1 ~ 2h under vacuum, and annealing temperature is 600 ~ 900 DEG C, can obtain Graphene or ultrathin carbon films after having annealed on matrix surface.
Substrate adopts cathodic arc ion plating membrane method deposit metal catalytic layer that one deck plays katalysis, metal is Cu or Ni.
The manufacturing process of described metal catalytic layer is as follows: after having cleaned the aura of substrate surface, under the condition of ar gas environment, substrate bias-50V ~-200V, vacuum tightness 0.1Pa ~ 1Pa, open multiple arc target, voltage in metal targets is 20V, electric current is 40 ~ 100A, metal deposits generation metal catalytic layer over the substrate surface, and depositing time is 5 ~ 10min.
Described substrate is silicon substrate, silica membrane substrate or tinsel.
Described aura cleaning is: under the condition of ar gas environment, vacuum tightness 2.5Pa, substrate bias-800V, carries out aura cleaning 20min to substrate surface.
When passing into the mixed gas of acetylene and argon gas in deposit cavity, the flow of acetylene is 10 ~ 20sccm, and the flow of argon gas is 60 ~ 80sccm.
In the process that Graphene or ultrathin carbon films deposit over the substrate surface, substrate rotates with substrate frame, and rotating speed is 3rmp.
Speed of cooling during annealing is 10 DEG C/min.
The present invention adopts hydrogeneous acetylene to rise as carbon source, needs in addition to assist ionization with rare gas element, easily obtains because argon gas is cheap, so adopt argon gas to assist ionization here.Acetylene gas is the positively charged ion of carbon and hydrogen through anode layer ion source ionization, and carbon ion is negatively biased attraction, substrate is formed Graphene or ultrathin carbon films, and argon ion can etch away the hydrogen in film to the bombardment of substrate, thus reduces sp
3the formation of hybrid bond, then vacuum annealing under certain condition, thus obtain high-quality Graphene or ultrathin carbon films, wherein can obtain homogeneous ultrathin carbon films in low temperature 600 DEG C of annealing, high temperature 900 DEG C annealing, can obtain Graphene under the katalysis of metal catalyst.
The method that PVD technology provided by the invention prepares Graphene or ultrathin carbon films compared with prior art has following advantage: (1) adopts gaseous carbon sources, the Graphene of preparation or ultrathin carbon films thickness controllable precise; (2) little to substrate shape dimensional requirement, Graphene homogeneous on a large scale or ultrathin carbon films can be prepared; (3) can in-situ deposition metal level as catalyzer; (4) device structure facilitating preparation (5) the present invention of electron device electrode to use is simple, is easy to control, and industrial prospect is good.In addition, to need the high temperature of more than 1000 DEG C to carry out pyrolysis gas different from CVD, anode layer ion source ionization carbon-source gas is adopted in the present invention, (≤100 DEG C) deposition can be realized at quite low temperatures, and because ion source ionization level is high, carbon source can be made fully to deposit, almost there is no the discharge of waste gas, greatly reduce the consumption of the energy and resource.
Accompanying drawing explanation
The deposition apparatus design schematic diagram of Fig. 1 for adopting in embodiments of the invention;
Fig. 2 is Graphene obtained in embodiment 1 or the surface topography of ultrathin carbon films;
Fig. 3 is the Raman spectrum of Graphene or the ultrathin carbon films prepared in various embodiments of the present invention;
Fig. 4 is the model diagram of the anode layer ion source in deposition apparatus;
Fig. 5 is the anode layer ion source fundamental diagram in deposition apparatus;
In figure: 1, fire door; 2, anode layer ion source; 3, multi sphere magnetic controlling target; 4, work rest; 5, well heater; 6, bleeding point.
Embodiment
Below in conjunction with specific embodiment, detailed specific description is done to the present invention.
All as shown in Figure 1, the deposit cavity of this device is surrounded by furnace wall the deposition apparatus adopted in following examples, and deposit cavity height is 500-1500mm, and diameter is 700-1500mm.Deposit cavity side is provided with fire door 1, to facilitate the handling of substrate.Deposit cavity is provided with bleeding point 6, and vacuumize unit and vacuumized by bleeding point 6 pairs of deposit cavities, vacuumizing unit can be made up of diffusion pump and mechanical pump, and also can adopt molecular pump, highest attainable vacuum can reach 5 × 10
-4pa.The centre of deposit cavity is well heater 5, and heating power 10-30 kilowatt, can improve heating efficiency.An anode layer ion source 2, three multi sphere magnetic controlling targets 3 are arranged on furnace wall.Substrate is contained on work rest 4, and rotates with work rest 4.This layout makes plasma density in deposit cavity increase considerably, and the complete submergence of workpiece in the plasma.Graphene or ultrathin carbon films is prepared by anode layer ion source ionization; Substrate frame negative bias 0 ~-1000V continuously adjustabe, can rotate, and conveniently prepares extensive Graphene homogeneous continuously or ultrathin carbon films; The well heater at center can preheat substrates, improves adhesive force, and can regulate depositing temperature; Three multi sphere magnetic controlling targets, can select different target in-situ deposition middle layers or transition layer as required.
The model diagram of the anode layer ion source adopted in deposition apparatus and schematic diagram are as shown in Figures 2 and 3, owing to being provided with high-intensity magnetic field between the anode and cathode, electronics is traped in venting port by magnetic field, and rotate along direction that is vertical and paper, the gas that vortex Ionized by Electrons passes through produces plasma body, because the specific charge of ion is low, so can by the deaeration channel between negative electrode and anode, along with electrons spread is to main anode district, further ionization positively charged ion, high-density is formed on anode top layer, very thin cationic layer, be discharged this region by the positively charged ion of ionization and accelerated by negative electrode further, finally be negatively biased attraction.
In following examples of the present invention, carbon source is acetylene gas, and the rare gas element of auxiliary ionization is argon gas, and substrate adopts silicon substrate, silica membrane substrate or tinsel.
Embodiment 1
Preparation technology in the present embodiment is as follows: first put in the substrate frame of deposit cavity by substrate, 70 DEG C, ar gas environment, vacuum tightness 2.5Pa, substrate bias-800V condition under, to substrate surface carry out aura cleaning 20min; Then under the condition of ar gas environment, substrate bias-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas, air pressure is 0.55Pa, and in mixed gas, the flow of acetylene is 10sccm, and the flow of argon gas is 70sccm; Open anode layer ion source to mixed gas ionization, during ionization, voltage is 450V, anode layer ion source produces the ionization electric current of stable 1.4A, acetylene is produced containing carbocation after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate, depositing time is 10min, and in deposition process, substrate rotates with substrate frame, and rotating speed is 3rmp.Anneal after having deposited 1h under vacuum, and annealing temperature is 600 DEG C, and speed of cooling is 10 DEG C/min, is cooled to room temperature and can obtains homogeneous ultrathin carbon films on matrix surface after having annealed.
The surface topography of ultrathin carbon films obtained in the present embodiment as shown in Figure 2.
Embodiment 2
Preparation technology in the present embodiment is as follows: first put in the substrate frame of deposit cavity by substrate, 90 DEG C, ar gas environment, vacuum tightness 2.5Pa, substrate bias-800V condition under, to substrate surface carry out aura cleaning 20min; After the aura of substrate surface has been cleaned, under the condition of ar gas environment, substrate bias-100V, vacuum tightness 0.7Pa, open multiple arc target, target is High-Purity Metallic Copper, voltage in metal targets is 20V, and electric current is 40A, and metal deposits generation metal catalytic layer over the substrate surface, depositing time is 10min, closes copper metal targets.Then under the condition of ar gas environment, substrate bias-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas, air pressure is 0.8Pa, and in mixed gas, the flow of acetylene is 10sccm, and the flow of argon gas is 80sccm; Open anode layer ion source to mixed gas ionization, during ionization, voltage is 450V, anode layer ion source produces the ionization electric current of stable 1.0A, acetylene is produced containing carbocation after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate, depositing time is 10min, and in deposition process, substrate rotates with substrate frame, and rotating speed is 3rmp.Anneal after having deposited 2h under vacuum, and annealing temperature is 600 DEG C, and speed of cooling is 10 DEG C/min, is cooled to room temperature and can obtains homogeneous ultrathin carbon films on matrix surface after having annealed.
Embodiment 3
Preparation technology in the present embodiment is as follows: first put in the substrate frame of deposit cavity by substrate, 100 DEG C, ar gas environment, vacuum tightness 2.5Pa, substrate bias-800V condition under, to substrate surface carry out aura cleaning 20min; After the aura of substrate surface has been cleaned, under the condition of ar gas environment, substrate bias-200V, vacuum tightness 0.5Pa, open multiple arc target, target is high-purity metal nickel, voltage in metal targets is 20V, and electric current is 100A, and metal deposits generation metal catalytic layer over the substrate surface, depositing time is 10min, closes copper metal targets.Then under the condition of ar gas environment, substrate bias-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas, air pressure is 0.6Pa, and in mixed gas, the flow of acetylene is 20sccm, and the flow of argon gas is 60sccm; Open anode layer ion source to mixed gas ionization, during ionization, voltage is 350V, anode layer ion source produces the ionization electric current of stable 1.0A, acetylene is produced containing carbocation after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate, depositing time is 10min, and in deposition process, substrate rotates with substrate frame, and rotating speed is 3rmp.Anneal after having deposited 2h under vacuum, and annealing temperature is 900 DEG C, and speed of cooling is 10 DEG C/min, is cooled to room temperature and can obtains Graphene on matrix surface after having annealed.
As shown in Figure 3, as can be seen from the figure, embodiment 1 and 2 Raman spectrum has obvious D peak and G peak, but 2D peak is not obvious, is ultrathin carbon films for Graphene prepared in above embodiment 1,2,3 or the Raman spectrum of ultrathin carbon films; There is obvious 2D peak in the Raman spectrum of embodiment 3, show that this film is Graphene.
Claims (6)
1. prepare a method for Graphene or ultrathin carbon films by PVD technology, it is characterized in that comprising the following steps: first substrate is put in the substrate frame of deposit cavity, aura cleaning is carried out to the surface of substrate; Afterwards ar gas environment, vacuum tightness 0.5Pa ~ 1Pa, 70 DEG C ~ 100 DEG C, under the condition of substrate bias-50V ~-200V, in deposit cavity, pass into the mixed gas of acetylene and argon gas; Open anode layer ion source to mixed gas ionization, during ionization, the voltage of anode layer ion source is 300 ~ 500V, and acetylene is produced containing carbocation by after ionization, positively charged ion under electric field action to substrate bombardment and at deposition on substrate; Anneal after having deposited 1 ~ 2h under vacuum, and annealing temperature is 600 ~ 900 DEG C, can obtain Graphene or ultrathin carbon films after having annealed on matrix surface; Substrate adopts cathodic arc ion plating membrane method deposit metal catalytic layer that one deck plays katalysis, metal is Cu or Ni; The manufacturing process of described metal catalytic layer is as follows: after having cleaned the aura of substrate surface, under the condition of ar gas environment, substrate bias-50V ~-200V, vacuum tightness 0.1Pa ~ 1Pa, open multiple arc target, voltage in metal targets is 20V, electric current is 40 ~ 100A, metal deposits generation metal catalytic layer over the substrate surface, and depositing time is 5 ~ 10min.
2. the method preparing Graphene or ultrathin carbon films according to claim 1, is characterized in that: described substrate is silicon substrate, silica membrane substrate or tinsel.
3. the method preparing Graphene or ultrathin carbon films according to claim 1, is characterized in that: described aura cleaning is: under the condition of ar gas environment, vacuum tightness 2.5Pa, substrate bias-800V, carries out aura cleaning 20min to substrate surface.
4. the method preparing Graphene or ultrathin carbon films according to claim 1, is characterized in that: when passing into the mixed gas of acetylene and argon gas in deposit cavity, and the flow of acetylene is 10 ~ 20sccm, and the flow of argon gas is 60 ~ 80sccm.
5. the method preparing Graphene or ultrathin carbon films according to claim 1, is characterized in that: in the process that Graphene or ultrathin carbon films deposit over the substrate surface, substrate rotates with substrate frame, and rotating speed is 3rmp.
6. the method preparing Graphene or ultrathin carbon films according to claim 1, is characterized in that: speed of cooling during annealing is 10 DEG C/min.
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| CN103741106B (en) * | 2013-12-25 | 2016-03-30 | 西安交通大学 | Ultrathin carbon films prepared by ECR oxygen-argon plasma etch technology and method |
| CN107419220B (en) * | 2016-05-23 | 2020-05-19 | 高雄第一科技大学 | Method for forming amorphous carbon/M metal layer on substrate |
| CN107298437A (en) * | 2017-08-07 | 2017-10-27 | 深圳市烯谷能源控股有限公司 | A kind of method of PVD method low temperature preparation graphene |
| CN111826610B (en) * | 2020-06-30 | 2022-11-15 | 太原理工大学 | Method for preparing graphene at low temperature by using amorphous carbon |
| CN112010292B (en) * | 2020-09-09 | 2022-06-10 | 宁波中冶电子科技有限公司 | Preparation method and application of graphene material |
| CN113151801B (en) * | 2021-03-03 | 2022-12-27 | 电子科技大学 | Preparation method of self-supporting suspended carbon film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1460638A (en) * | 2003-06-11 | 2003-12-10 | 中国科学院上海微***与信息技术研究所 | Flaky carbon nano tube, preparation method and special equipment |
| CN101550539A (en) * | 2009-05-14 | 2009-10-07 | 中国科学院宁波材料技术与工程研究所 | Method for depositing protection film on the ceramics valve core surface |
| CN101993062A (en) * | 2009-08-18 | 2011-03-30 | 通用汽车环球科技运作公司 | Nanographene layers and particles and lubricants incorporating the same |
| CN102260858A (en) * | 2010-05-26 | 2011-11-30 | 中国科学院物理研究所 | Method for directly growing graphine on various substrates |
| WO2012008789A2 (en) * | 2010-07-15 | 2012-01-19 | 성균관대학교산학협력단 | Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet |
| CN102659098A (en) * | 2012-05-21 | 2012-09-12 | 武汉大学 | Equipment and method for preparing graphene |
-
2013
- 2013-05-22 CN CN201310190642.8A patent/CN103266306B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1460638A (en) * | 2003-06-11 | 2003-12-10 | 中国科学院上海微***与信息技术研究所 | Flaky carbon nano tube, preparation method and special equipment |
| CN101550539A (en) * | 2009-05-14 | 2009-10-07 | 中国科学院宁波材料技术与工程研究所 | Method for depositing protection film on the ceramics valve core surface |
| CN101993062A (en) * | 2009-08-18 | 2011-03-30 | 通用汽车环球科技运作公司 | Nanographene layers and particles and lubricants incorporating the same |
| CN102260858A (en) * | 2010-05-26 | 2011-11-30 | 中国科学院物理研究所 | Method for directly growing graphine on various substrates |
| WO2012008789A2 (en) * | 2010-07-15 | 2012-01-19 | 성균관대학교산학협력단 | Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet |
| CN102659098A (en) * | 2012-05-21 | 2012-09-12 | 武汉大学 | Equipment and method for preparing graphene |
Non-Patent Citations (2)
| Title |
|---|
| 田民波.薄膜技术与薄膜材料.《薄膜技术与薄膜材料》.北京市：清华大学出版社,2006,第564-569页. * |
| 石墨烯的制备研究进展;袁小亚;《无机材料学报》(第06期);全文 * |
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