CN103825434B - A kind of IGBT drive circuit - Google Patents
A kind of IGBT drive circuit Download PDFInfo
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- CN103825434B CN103825434B CN201410105592.3A CN201410105592A CN103825434B CN 103825434 B CN103825434 B CN 103825434B CN 201410105592 A CN201410105592 A CN 201410105592A CN 103825434 B CN103825434 B CN 103825434B
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Abstract
The present invention relates to integrated electronic circuit technology, be specifically related to a kind of gate driver circuit for IGBT. IGBT drive circuit of the present invention; comprise photo-coupler 1, on-off circuit 2 and Drive Protecting Circuit 3; described photo-coupler 1 is connected with on-off circuit 2 and Drive Protecting Circuit 3 respectively; described on-off circuit 2 is connected with Drive Protecting Circuit 3; thereby control photo-coupler 1 by on-off circuit 2 and realize the overcurrent protection to IGBT with the break-make of drive circuit; do not have electronic devices and components owing to controlling in circuit on the network of IGBT, therefore its reliability strengthens. Beneficial effect of the present invention is to effectively reduce the complexity of circuit, and improved the reliability and stability of circuit. The present invention is particularly useful for IGBT drive circuit.
Description
Technical field
The present invention relates to integrated electronic circuit technology, be specifically related to a kind of gate driver circuit for IGBT.
Background technology
Along with the fast development of Power Electronic Technique, IGBT is easily driven because of it, and current capacity is strong, withstand voltage height, speed soon withAnd low saturation pressure degradation feature is widely used in various power electronic systems. As variable-frequency power sources, welding machine, Switching Power Supply etc.
Although IGBT has superior performance, but still need external circuits that it is driven and is protected. Owing to driving IGBT instituteThe power needing is larger, and therefore, common drive circuit cannot complete the driving to it. So need to design special driving IGBTThe circuit of module. Due to the drive circuit performance of IGBT with and the quality of the reliability performance that directly has influence on Circuits System with canLean on property. Therefore, design high-performance, safe and reliable IGBT drive circuit seems very important.
In general, the type of drive of IGBT is mainly divided into two kinds, and one is direct driving, and another kind is isolation drive. Due toIGBT is normally operated in high voltage, the occasion of large electric current. Mainly by PWM (pulse width modulation) side and drive IGBTFormula realizes. And the generation system of PWM belongs to weak signal system, for safety and lower high-pressure section loop to weak signal electricityThe interference on road, needs to carry out the isolation on electric between the two. Therefore, isolation drive has embodied higher reliability.
At present general IGBT overcurrent protection network is conventionally by the charging delay of design resistance and electric capacity, thereby it is soft to realize IGBTTurn-off. Thereby so just need the value of the accurate design capacitance of circuit and resistance to obtain the suitable turn-off time, make circuit structureFor complexity.
Summary of the invention
To be solved by this invention, be exactly the problem for current IGBT driving circuit structure complexity, propose a kind of simple in structure,A kind of IGBT drive circuit of dependable performance.
The present invention solves the problems of the technologies described above adopted technical scheme: as shown in Figure 1, a kind of IGBT drive circuit, comprisesPhoto-coupler 1, on-off circuit 2 and Drive Protecting Circuit 3, described photo-coupler 1 is electric with on-off circuit 2 and driving protection respectivelyRoad 3 connects, and described on-off circuit 2 is connected with Drive Protecting Circuit 3; Described on-off circuit 2 comprises resistance R 21, R23, NMOSPipe MN22; Described Drive Protecting Circuit 3 comprises PMOS pipe MP301, and NMOS manages MN302, triode NPN32, resistance R 31,R34, R36, R38, R303, R306, diode D35, D37, D304, capacitor C 33, C39, C305; Wherein,
One end of one end of R21, one end of R31, R34, one end of R38, one end of R306, the positive pole of D37, MP301Source electrode and substrate all meet power vd D;
The other end of R21 is connected with the grid of MN22, the colelctor electrode of NPN32 respectively, the source electrode of MN22 and substrate and photo-couplerThe colelctor electrode of 1 rear class connects, and the drain electrode of MN22 is connected with one end of R23, the other end of R23 respectively with the other end of R31,One end of the grid of MP301, the grid C33 of MN302 connects;
The other end of R34 is connected with one end of the negative pole of D35 and R36, and the positive pole of D35 is connected with the base stage of NPN32, R36'sThe other end is connected with the other end of R38 and one end of C39;
After being connected with the drain electrode of MN302, the drain electrode of MP301 is connected the colelctor electrode of IGBT and D37 with the grid of IGBT by R303Negative pole connect, one end of the emitter stage of IGBT and the other end of R306, C305, the negative pole of D304, photo-coupler 1 rear classNegative electrode connect;
The emitter stage of the emitter stage of the rear class of photo-coupler 1, the other end of C33, NPN32, the other end of C39, MN302'sThe positive pole of source electrode and substrate, D304, the equal ground connection GND of the other end of C305.
Concrete, Drive Protecting Circuit 3 also comprises NMOS pipe MN40, the drain electrode of MN40 meets power vd D, grid and MP301Drain electrode and drain electrode connection, source electrode and the substrate of MN302 and the grid of the other end of R31 and the grid of MP301 and MN302 connectConnect.
Beneficial effect of the present invention is to effectively reduce the complexity of circuit, and improved the reliability and stability of circuit.
Brief description of the drawings
Fig. 1 is the schematic diagram of the IGBT drive circuit of embodiment 1;
Fig. 2 is the schematic diagram of the IGBT drive circuit of embodiment 2;
Fig. 3 is the emulation schematic diagram of the IGBT drive circuit of embodiment 1;
Fig. 4 is the emulation schematic diagram of the IGBT drive circuit of embodiment 2.
Detailed description of the invention
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail:
IGBT drive circuit of the present invention, is mainly by phase inverter the grid of IGBT is driven, by utilizing IGBT shortThe feature that saturation voltage rises when on the is road controlled the break-make of photo-coupler and drive circuit, thereby realizes IGBT overcurrent protection. LogicalCross photo-coupler and realized the electrical isolation of IGBT and prime weak signal system. By switch MOS management and control photo-coupler processed and drivingThereby the break-make of circuit realizes the overcurrent protection to IGBT, there are not electronic devices and components owing to controlling in circuit on the network of IGBT,Therefore its reliability strengthens.
Embodiment 1:
As shown in Figure 1, this example comprises photo-coupler 1, on-off circuit 2 and Drive Protecting Circuit 3, and described photo-coupler 1 respectivelyBe connected with on-off circuit 2 and Drive Protecting Circuit 3, described on-off circuit 2 is connected with Drive Protecting Circuit 3; Described switch electricityRoad 2 comprises resistance R 21, R23, and NMOS manages MN22; Described Drive Protecting Circuit 3 comprises PMOS pipe MP301, and NMOS manages MN302,Triode NPN32, resistance R 31, R34, R36, R38, R303, R306, diode D35, D37, D304, capacitor C 33,C39, C305, wherein, the model of photo-coupler 1 is TLP550. 1,4, No. 7 pin of TLP550 is not for connecting pin, 2The prime that number pin and No. 3 pins are photo-coupler TLP550, No. 2 pins are anode, the negative electrode that No. 3 pins are prime; 5Number pin, No. 6 pins, No. 8 pins are the rear class of photo-coupler TLP550, and No. 5 pins are emitter stage, and No. 6 pins are current collectionThe utmost point, the negative electrode that No. 8 pins are rear class.
One end of one end of R21, one end of R31, R34, one end of R38, one end of R306, the positive pole of D37, MP301Source electrode and substrate all meet power vd D;
The other end of R21 is connected with the grid of MN22, the colelctor electrode of NPN32 respectively, the source electrode of MN22 and substrate and photo-couplerInput of 1 connects, and the drain electrode of MN22 is connected with one end of R23, the other end of R23 respectively with the other end of R31,One end of the grid of MP301, the grid C33 of MN302 connects;
The other end of R34 is connected with one end of the negative pole of D35 and R36, and the positive pole of D35 is connected with the base stage of NPN32, R36'sThe other end is connected with the other end of R38 and one end of C39;
After being connected with the drain electrode of MN302, the drain electrode of MP301 is connected the colelctor electrode of IGBT and D37 with the grid of IGBT by R303Negative pole connect, one of one end of the emitter stage of IGBT and the other end of R306, C305, the negative pole of D304, photo-coupler 1Individual output connects;
Another output of 5 pin of photo-coupler 1, the other end of C33, the emitter stage of NPN32, the other end of C39, MN302Source electrode and substrate, the positive pole of D304, the equal ground connection GND of the other end of C305.
This routine operation principle is:
The conducting of IGBT: when occurring control signal on 2,3 pins of photo-coupler 1. Now photo-coupler meeting conducting, A is orderedCurrent potential can be dragged down rapidly. Now, phase inverter MP301 conducting, phase inverter MN302 cut-off, at this moment can be at the gate electrode of IGBTInduce the voltage of 20V. Because D304 can be by the emitter stage current potential voltage stabilizing of IGBT in about 5V, therefore, the grid of IGBTVoltage is actually 15V. It is IGBT conducting.
The shutoff of IGBT: when the control signal on 2,3 pins of photo-coupler 1 disappears, the current potential that at this moment A is ordered can be filled rapidlyTo high potential, phase inverter MP301 cut-off, phase inverter MN302 conducting, is directly connected the grid of IGBT with GND. EquallyBecause D304 can be by the emitter stage current potential voltage stabilizing of IGBT at 5V left and right, be now actually-5V of the grid voltage of IGBT. ThusIGBT can reliable turn-off.
As shown in Figure 3, be this routine emulation schematic diagram, can find out that from simulation result this circuit can provide for the grid of IGBTStable 20V and the voltage of 0V, thus the switch of IGBT can be controlled.
The overcurrent protection of IGBT: when IGBT is in ON state time, the current potential that B, C are 2 is stabilized in 9V left and right, if a certainMoment is short-circuited, and current foldback circuit will be triggered. Differentiate IGBT whether the method for short circuit be after IGBT is short-circuited,Its saturation voltage can rise thereupon. Make to block D37 when cut-off when the saturation voltage drop of IGBT rises to, the circuit at R34 place is " floatingEmpty ", the current potential that now B, C are ordered can rise to rapidly the breakdown voltage (about 13V left and right) that punctures D35. Now puncturing D35 occursPuncture NPN32 conducting. Now the grid potential of switch MN22 can be reduced to rapidly 0 current potential, and switch MN22 turn-offs. Due toThe shutoff of switch MN22 is thoroughly isolated photo-coupler and internal drive circuits. Therefore the current potential that A is ordered can be with driving R31 and drivingThe time constant that discharges and recharges of moving C33 rises gradually, progressively by phase inverter MP301 cut-off, phase inverter MN302 conducting. Thereby realThe soft shutoff of existing IGBT.
Embodiment 2:
As shown in Figure 2, be that with the main difference of embodiment 1 this example has increased feedback MN40, its connection is by feedback MN40Grid and the output (being the drain electrode of phase inverter MP301) of phase inverter join, its drain electrode meets VDD, its source electrode and substrate phaseAfter connecting, connect the grid of the input (being phase inverter MP301) of phase inverter).
Its detailed description of the invention and detailed description of the invention one are basic identical, and the feedback MN40 just newly increasing can change at high levelOpen a period of time to assist raising of A point current potential for low level time. Thereby accelerate the decline of output potential, make to reachThe object that output waveform trailing edge is more precipitous.
For clearer explanation feedback MN40, on the impact of circuit output waveform trailing edge, we are to feedback MN40,Circuit structure has carried out emulation. As shown in Figure 4, will in the inverter output waveform in Fig. 4 and Fig. 3, compare and can find,Having feedback MN40, situation under, the trailing edge of waveform is really more precipitous.
In sum, the present invention proposes a kind of New IGBT drive circuit. This circuit can be by isolation optocoupler induction control signalAnd directly control phase inverter and export high electronegative potential and drive IGBT, owing to there is no the participation of other electronic devices and components on control circuit,Therefore reliability strengthens. Aspect overcurrent protection, in novel circuit, be by use switch MOS management and control photo-coupler processed andBreak-make between drive circuit, and the only disconnection in the time that IGBT is short-circuited of switch MOS pipe, therefore can in the time that IGBT is short-circuitedReliable turn-off.
Claims (2)
1. an IGBT drive circuit, is characterized in that, comprises photo-coupler (1), on-off circuit (2) and drives protection electricityRoad (3), described photo-coupler (1) is connected with on-off circuit (2) and Drive Protecting Circuit (3) respectively, described on-off circuit(2) be connected with Drive Protecting Circuit (3); Described on-off circuit (2) comprises the first resistance R 21, the second resistance R 23, theOne NMOS pipe MN22; Described Drive Protecting Circuit (3) comprises PMOS pipe MP301, the 2nd NMOS pipe MN302, triodeNPN32, the 3rd resistance R 31, the 4th resistance R 34, the 5th resistance R 36, the 6th resistance R 38, the 7th resistance R 303, the 8thResistance R 306, the first diode D35, the second diode D37, the 3rd diode D304, the first capacitor C 33, the second electric capacityC39, the 3rd capacitor C 305; Wherein,
One of one end of one end of the first resistance R 21, one end of the 3rd resistance R 31, the 4th resistance R 34, the 6th resistance R 38Source electrode and the substrate of one end of end, the 8th resistance R 306, the positive pole of the second diode D37, PMOS pipe MP301 all connect power supplyVDD；
The other end of the first resistance R 21 is connected with the grid of a NMOS pipe MN22, the colelctor electrode of triode NPN32 respectively,The source electrode of the one NMOS pipe MN22 is connected with the colelctor electrode of photo-coupler (1) rear class with substrate, the leakage of a NMOS pipe MN22The utmost point is connected with one end of the second resistance R 23, the other end of the second resistance R 23 respectively with the other end, the PMOS of the 3rd resistance R 31The grid of pipe MP301, the grid of the 2nd NMOS pipe MN302 are connected with one end of the first capacitor C 33;
The other end of the 4th resistance R 34 is connected with the negative pole of the first diode D35 and one end of the 5th resistance R 36, the one or two utmost pointThe positive pole of pipe D35 is connected with the base stage of triode NPN32, the other end of the other end of the 5th resistance R 36 and the 6th resistance R 38Be connected with one end of the second capacitor C 39;
The drain electrode of PMOS pipe MP301 is passed through the 7th resistance R 303 and IGBT's after being connected with the drain electrode of the 2nd NMOS pipe MN302Gate pole connects, and the colelctor electrode of IGBT is connected with the negative pole of the second diode D37, the emitter stage of IGBT and the 8th resistance R 306The negative electrode of one end of the other end, the 3rd capacitor C 305, the negative pole of the 3rd diode D304, photo-coupler (1) rear class connects;
The emitter stage of photo-coupler (1) rear class, the other end of the first capacitor C 33, the emitter stage of triode NPN32, the second electricityThe other end of appearance C39, the source electrode of the 2nd NMOS pipe MN302 and substrate, the positive pole of the 3rd diode D304, the 3rd capacitor C 305The equal ground connection GND of the other end.
2. a kind of IGBT drive circuit according to claim 1, is characterized in that, Drive Protecting Circuit (3) also comprisesThe 3rd NMOS pipe MN40, the drain electrode of the 3rd NMOS pipe MN40 meets power vd D, grid and PMOS manages the drain electrode and the of MP301The grid of two NMOS pipe drain electrode connection, source electrode and the substrates of MN302 and the other end of the 3rd resistance R 31 and PMOS pipe MP301Be connected with the grid of the 2nd NMOS pipe MN302.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410105592.3A CN103825434B (en) | 2014-03-20 | 2014-03-20 | A kind of IGBT drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410105592.3A CN103825434B (en) | 2014-03-20 | 2014-03-20 | A kind of IGBT drive circuit |
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| CN103825434A CN103825434A (en) | 2014-05-28 |
| CN103825434B true CN103825434B (en) | 2016-05-11 |
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| CN201410105592.3A Expired - Fee Related CN103825434B (en) | 2014-03-20 | 2014-03-20 | A kind of IGBT drive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104270129B (en) * | 2014-09-26 | 2017-08-11 | 永济新时速电机电器有限责任公司 | A kind of IGBT drivings of current transformer are received and fault feedback circuit |
| CN104967288A (en) * | 2015-06-17 | 2015-10-07 | 中国科学院等离子体物理研究所 | High-voltage pulse power supply IGBT drive cabinet |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
| CN107147074A (en) * | 2017-07-08 | 2017-09-08 | 佛山市正略信息科技有限公司 | A kind of overvoltage protection switch circuit based on voltage-regulator diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0614278A1 (en) * | 1988-11-16 | 1994-09-07 | Fuji Electric Co., Ltd. | Drive circuit for use with voltage-driven semiconductor device |
| CN101882860A (en) * | 2010-06-23 | 2010-11-10 | 山东大学威海分校 | Novel insulated gate bipolar translator (IGBT) drive and protection circuit |
| CN201682411U (en) * | 2010-04-29 | 2010-12-22 | 湖南文理学院 | Switch control circuit with short circuit protection |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4779549B2 (en) * | 2005-10-04 | 2011-09-28 | 富士電機株式会社 | A gate driving circuit of a voltage driven semiconductor element. |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0614278A1 (en) * | 1988-11-16 | 1994-09-07 | Fuji Electric Co., Ltd. | Drive circuit for use with voltage-driven semiconductor device |
| CN201682411U (en) * | 2010-04-29 | 2010-12-22 | 湖南文理学院 | Switch control circuit with short circuit protection |
| CN101882860A (en) * | 2010-06-23 | 2010-11-10 | 山东大学威海分校 | Novel insulated gate bipolar translator (IGBT) drive and protection circuit |
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