CN103681951A - Solar cell back passivation local diffusion structure and manufacturing method thereof - Google Patents
Solar cell back passivation local diffusion structure and manufacturing method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 238000012545 processing Methods 0.000 claims abstract description 66
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- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Abstract
The invention provides a solar cell back passivation local diffusion structure and a manufacturing method thereof, wherein the solar cell back passivation local diffusion structure comprises the following components: a silicon wafer layer, the bottom surface of which is provided with a plurality of projecting electrode processing parts, the end edge of the electrode processing part is provided with an end joint surface; a passivation film, the electrode processing part is in a convex shape and protrudes out of the passivation film; a first electrode disposed on an electrode interface layer, wherein the first electrode interface layer is a metal silicon alloy layer, and the first electrode is convex and protrudes from the passivation film; therefore, the silicon slice layer cavity formed by the sintering process can be filled, the service life of the component is better, the energy conversion efficiency of the component is improved, the process cost consumption is avoided, the manufacturing economic benefit can be met, and the industrial competitiveness of the component is actively improved.
Description
Technical field
The invention relates to that a kind of solar cell forms and manufacture method, espespecially utilize passivating back local diffusion to fill up a silicon wafer layer cavity, make the rear surface of solar cell passivation local diffusion structure and the manufacture method thereof that there is better assembly useful life and promote its energy conversion efficiency.
Background technology
Solar cell is called again solar chip or photocell, is a kind of photoelectrical semiconductor component that utilizes solar power generation.Its with irradiation on different conductor or semiconductor, the free electron generation effect in photon and conductor or semiconductor, and then moment is with regard to exportable voltage and electric current, therefore it is called photovoltaic (be called for short photovoltaic Photovoltaic/PV) physically.And because solar cell power generation is a kind of reproducible environmental protection generation mode, in its power generation process, can not produce carbon dioxide isothermal chamber gas, can, to environment, not quite ripe at present green can application.
The manufacture method of known solar cells as shown in Figure 1, its step comprises: (1) is provided with one second antireflective coating 92 and bottom surface is provided with the passivating film 90 that forms a back of the body surface field (BSF/Back Surface Field) in the micro-structural 81 of silicon wafer layer 80 (wafer) end face, and this passivating film 90 is to include alumina layer 93 (Al
2o
3) and the first antireflective coating 91, wherein this first antireflective coating 91, the second antireflective coating 92 are to can be silicon nitride layer (SiN
x); Continue (2) in the passivating film 90 (back of the body surface field) of this silicon wafer layer 80, with laser 82, carry out etching, and form a plurality of perforates 83, and this perforate 83 deeply to this silicon wafer layer 80; Continue (3) carry out sintering procedure, in passivating film 90 (the first antireflective coating 91) below of this silicon wafer layer 80, form an aluminium lamination 94 (Al), and heat and carry out the combination of aluminium silicon, by this aluminium lamination 94, aluminium is entered in this perforate 83 (silicon wafer layer 80), in order to form the first electrode 95.Continue (4) when carrying out aluminium while diffusing in this perforate 83, the top of this first electrode 95 (front end) can form an alusil alloy layer 951 and cavity 84, wherein, this alusil alloy layer 951 is for carrying out the hot melt bond of aluminium when diffusion aluminium and this silicon wafer layer 80 contact jaws, and this cavity 84 be silicon wafer layer 80 the space of being separated out by hot melt partly; Continue and be provided with the second electrode 96 in the second antireflective coating 92 of this silicon wafer layer 80 (wafer) end face.
Though the manufacture method of aforementioned this known solar cells can complete the manufacture of solar cell, but the formed formation of this manufacture method still has shortcoming to exist, for example: when carrying out the heating of aforementioned aluminium silicon combination and cooling stage, because of the diffusion rate of silicon and the diffusion rate of aluminium unequal, and due to the silicon in alloy phase, aluminum concentration and aluminium lamination difference are many, and aluminium is that hot melt is liquid when high temperature, and silicon is solid-state except being all alusil alloy, therefore silicon can be subject to the aluminium of hot melt liquid state and corrode this region in perforate 83 (silicon wafer layer 80), be that solid state si can incorporate in this hot melt aluminium and form this alusil alloy layer 951, and silicone content is lower in cooling stage aluminium lamination, make alloy-layer can be easier to move (silicon is solid-state) toward aluminium lamination, in perforate, the original position of silicon will form cavity, and now solid state si cannot be inserted this cavity, and the aluminium silicon eutectic of hot melt liquid state has little time to insert this cavity, this is the reason that aforementioned this cavity 84 forms.And after the cavity 84 of this known solar cells forms, will affect the operating state of its power conversion, make its energy conversion efficiency not good, and another side also will affect the useful life of assembly, aobvious nonideal design.
Moreover due to the manufacture method of this known solar cells, it needs first to carry out etching with laser when back of the body surface field forms the first electrode, makes to form a plurality of perforates 83 and then carries out the combination of aluminium silicon, to complete the making of this first electrode.This laser-induced thermal etching is with laser engraving machine, to carry out the technical matters of LaserIsolation and topical surface treatment, and because of this laser-processing system cost quite high (speed of response is also difficult for meeting the demand of solar cell), and its plant maintenance grade is quite high (dust free room equipment) also, on the whole by greatly affecting the cost economic benefit of solar cell manufacture, therefore also there is in the lump the necessity that is improved, breaks through.Therefore how solving disadvantages associated problem in known solar cells manufacture, is really the emphasis direction that dealer researches and develops, breaks through.
Edge this, the inventor is in view of not attaining the desirable fact on known solar cells manufacture, structural shortcoming problem and method thereof, Construction designing, this case inventor sets about its solution of research and development design, hope can be developed a kind of solar cell formation and manufacture method thereof that has more quality stability, manufactures business efficiency, to promote the development of this industry, the then design when many and have generation of the present invention.
Summary of the invention
Object of the present invention is providing a kind of rear surface of solar cell passivation local diffusion structure and manufacture method thereof, and it can make the formed silicon wafer layer of sintering process cavity be filled up, and makes to have better assembly useful life and promotes its energy conversion efficiency.
A further object of the present invention is providing a kind of rear surface of solar cell passivation local diffusion (Passivate Emitter Rear-side Locally Diffuse, be called for short PERL) structure and manufacture method thereof, it can reduce the technical matters of carrying out laser-induced thermal etching (Laser Isolation and topical surface treatment) with laser engraving machine, make the manufacture economic benefit that reduces system of processing cost and meet solar cell, and then actively promote its industrial competitiveness.
The present invention is in order to reach above-mentioned object and effect, and its method and technology adopting comprises:
(1) in a silicon wafer layer bottom surface, be provided with the shielding of a plurality of separation;
(2) in this silicon wafer layer bottom surface, carry out etching operation, make this silicon wafer layer relatively expose and form an electrode processing department in the position of this shielding place, this electrode processing department is to form a shape of protruding, respectively between this electrode processing department, form an erosion concave surface of this silicon wafer layer bottom surface, and this electrode processing department is to join with an electrode processing junction and this shielding;
(3) in the bottom surface of this silicon wafer layer, carry on the back the processing of surface field, make this silicon wafer layer bottom surface form a passivating film;
(4) this shielding is removed, this electrode processing junction is exposed;
(5) in this passivating film below, form a metal level, and the operation that the metal of this metal level is combined with silicon is carried out in heating, this electrode processing department is to stretch in this metal level, making the metal of this metal level hot melt and the electrode processing department of this silicon wafer layer join to touching reacts to each other, continue and make this electrode processing department and this metal interlevel form at least one the first electrode junction layer, this the first electrode junction layer is to comprise a metal silicon alloy layer, and establish one first electrode in this first electrode junction layer place, this first electrode is the shape for protruding and protrudes from this passivating film and stretch in this metal level.
Rear surface of solar cell passivation local diffusion structure of the present invention is to include: a silicon wafer layer, the bottom surface of this silicon wafer layer is the electrode processing department that is provided with a plurality of protrusions, an erosion concave surface that respectively forms this silicon wafer layer bottom surface between this electrode processing department, the end limit of this electrode processing department is to have a terminal area; One passivating film, is to be located on the erosion concave surface of this silicon wafer layer, and this electrode processing department is to protrude from this passivating film; One first electrode, this first electrode is to be located at an electrode junction layer, and this electrode junction layer is to be located on the terminal area of this electrode processing department, and this first electrode junction layer is to be a metal silicon alloy layer, and this first electrode is the shape for protruding and protrudes from this passivating film.
Accompanying drawing explanation
For auditor is further understood and understanding technical characterictic of the present invention and the effect reached, below in conjunction with preferred embodiment and accompanying drawing, be described in detail as follows, wherein:
Fig. 1 is the manufacture method schematic flow sheet of known solar cells.
Fig. 2 is that inversion schematic diagram is amplified in the part of known solar cells.
Fig. 3 is the manufacture method schematic flow sheet of solar cell of the present invention.
Fig. 4 is that inversion schematic diagram is amplified in the part of solar cell of the present invention.
Concrete Implementation Modes
Refer to Fig. 3, in order to rear surface of solar cell passivation local diffusion manufacture method of the present invention to be described, as shown in the figure, the step of manufacture method of the present invention comprises:
(1) in silicon wafer layer 10 (wafer) end face, establish a micro-structural 11, and be provided with one second antireflective coating 13 in this micro-structural 11, this second antireflective coating 13 is to can be silicon nitride layer (SiN
x) etc.
(2) in these silicon wafer layer 10 bottom surfaces, establish separative a plurality of shielding 100 (Mask), this shielding 100 is to make with anticorrosive, antiacid base material.
(3) in these silicon wafer layer 10 bottom surfaces, carry out etching operation, this etching operation is to can be the operations such as chemical etching or other etching techniques, but not by being limit, and this relative position that this shields 100 places of silicon wafer layer 10 is exposed and form an electrode processing department 12, this electrode processing department is to form a shape of protruding, respectively 12 of this electrode processing departments form an erosion concave surface 101 of these silicon wafer layer 10 bottom surfaces, another, and this electrode processing department 12 is to join with this shielding 100 with an electrode processing junction 120.
(4) in these silicon wafer layer 10 bottom surfaces, carry on the back the processing of surface field (BSF/Back Surface Field), make these silicon wafer layer 10 bottom surfaces form a passivating film, this passivating film is to include alumina layer 20 (Al
2o
3) and the first antireflective coating 30, wherein, this first antireflective coating 30 is to be located on the erosion concave surface 101 of this silicon wafer layer 10, and this alumina layer 20 is to be located on this first antireflective coating 30; This first antireflective coating 30 is to can be silicon nitride layer (SiN
x) etc.
(5) shielding 100 is removed in the shielding 100 of these electrode processing department 12 belows, the electrode processing junction 120 of this electrode processing department 12 is exposed.
(6) carry out sintering operation, in the back of the body surface field (passivating film) of this silicon wafer layer 10, carry out operation that a metal is combined with silicon to complete electrode fabrication, it is to form a metal level 41 (Al) in this first antireflective coating 30 and this electrode processing department 12 (electrode processing junction 120) below, and heating is carried out this metal and is combined with silicon, making the metal of these metal level 41 hot melts and the electrode processing department 12 of this silicon wafer layer 10 join to touching reacts to each other, continue and make this electrode processing department 12 and 41 of this metal levels form at least one the first electrode junction layer 42, this the first electrode junction layer 42 is to comprise a metal silicon alloy layer, and establish one first electrode 40 in these the first electrode junction layer 42 places, this first electrode 40 is the shapes for protruding and protrudes from this passivating film and stretch in this metal level 41.Continue and be provided with the second electrode 15 in the second antireflective coating 13 of this silicon wafer layer 10 (wafer) end face.
Wherein, the operation that an above-mentioned metal is combined with silicon to be to complete electrode fabrication, and it is following one or a combination set of that this metal can be, but not as limit: aluminium, silver, copper, tin, titanium or nickel etc.
Wherein, above-mentioned the first electrode 40, the selection of its material can be shared metal level or electric conducting material, following once not as limit such as can be: alusil alloy layer, silver-colored silicon alloy layer, cupro silicon layer, tin silicon alloy layer, titanium silicon layer, nickel silicon alloy layer etc.
Abovementioned steps (6) carry out the operation that a metal is combined with silicon, can be the diffusion of carrying out this metal, although the diffusion rate of silicon and the diffusion rate of this metal are unequal, but when the silicon of electrode processing department 12 diffuses to behind the position of this metal and silicon alloy layer (the first electrode junction layer 42), because this electrode processing department 12 is the shape designs for protruding, by formed cavity after the silicon diffusion making in this electrode processing department 12, the liquid metal of surrounding's hot melt that is able to protrude the electrode processing department 12 of design by tool diffuses into and fills up this cavity, therefore finally its formation does not have empty formation.Therefore, the present invention is in forming the metal dispersion operation of this first electrode 40, its machine direction is to make the electrode processing department 12 of this silicon wafer layer 10 be the shape of protrusion, be to be that this electrode processing department 12 is stretched in this metal level 41 on it forms, make the rear formed cavity of silicon diffusion in this electrode processing department 12, the liquid metal (this metal level 41) of surrounding's hot melt that is able to be protruded by tool the electrode processing department 12 of design diffuses into and fills up this cavity, and not as is known structure form a cavity; So, rear surface of solar cell passivation local diffusion manufacture method of the present invention is eliminated shortcoming problem that its cavity of known technology produces.
Seeing also Fig. 4, is that local amplification of the present invention is inverted schematic diagram, and based on aforementioned manufacture method, rear surface of solar cell passivation local diffusion structure of the present invention is to include a silicon wafer layer 10 (wafer), alumina layer 20 (Al
2o
3), the first antireflective coating 30, the first electrode 40 and the second electrode 15; The end face of this silicon wafer layer 10 is to establish a micro-structural 11, and this micro-structural 11 is provided with one second antireflective coating 13, and this second antireflective coating 13 is to can be silicon nitride layer (SiN
x) etc.The bottom surface of this silicon wafer layer 10 is the electrode processing departments 12 that are provided with a plurality of protrusions, and respectively 12 of this electrode processing departments form an erosion concave surface 101 of these silicon wafer layer 10 bottom surfaces, and the end limit of this electrode processing department 12 is to have a terminal area 121.
This first antireflective coating 30 is to be located on the erosion concave surface 101 of this silicon wafer layer 10, and this first antireflective coating 30 is to can be silicon nitride layer (SiN
x) etc., this alumina layer 20 is to be located on this first antireflective coating 30, this alumina layer 20 and the first antireflective coating 30 are to form a passivating film, and this electrode processing department 12 is the shapes for protruding and protrudes this first antireflective coating 30 (passivating film).
This first electrode 40 is to be located at the first electrode junction layer 42, this the first electrode junction layer 42 is to be located on the terminal area 121 of this electrode processing department 12, this the first electrode junction layer 42 is to be a metal silicon alloy layer, and this first electrode 40 is the shapes for protruding and protrudes from this passivating film; One metal level 41 is to be located on this first antireflective coating 30 and the first electrode junction layer 42, this metal level 41 is electrode processing department 12 and first electrode junction layers 42 (this metal silicon alloy layer) of coated this protrusion, that is this electrode processing department 12 is to stretch into this metal level 41.This second electrode 15 is to be located on second antireflective coating 13 of end face of this silicon wafer layer 10, and this first electrode 40, the second electrode 15 are the positive and negative electrodes that form respectively solar cell.
Wherein, it is following one or a combination set of that the metal of said structure metal level 41 can be, but not as limit: aluminium, silver, copper, tin, titanium or nickel etc.
Wherein, said structure the first electrode 40, the selection of its material can be shared metal level or electric conducting material, following once not as limit such as can be: alusil alloy layer, silver-colored silicon alloy layer, cupro silicon layer, tin silicon alloy layer, titanium silicon layer, nickel silicon alloy layer etc.
In other words, rear surface of solar cell passivation local diffusion structure of the present invention and manufacture method thereof, because this electrode processing department 12 is the shape of protruding and protrudes from this passivating film and stretch in this metal level 41, therefore make this first electrode 40 also for the shape protruded and protrude from this passivating film and stretch in this metal level 41, so make the formed silicon wafer layer of sintering process cavity be filled up, the structure decrease of this projected electrode the engage space of electrode with storeroom around, make to have better assembly useful life and promote its energy conversion efficiency, and the present invention can reduce the technical matters of carrying out laser-induced thermal etching (Laser Isolation and topical surface treatment) with laser engraving machine simultaneously, make the manufacture economic benefit that reduces system of processing cost and meet solar cell, and then actively promote its industrial competitiveness.
In sum, the present invention is that a quite excellent wound is thought really, therefore propose application for a patent for invention in accordance with the law; Only the content of above-mentioned explanation, is only preferred embodiment of the present invention, and every variation of extending according to technological means of the present invention, ought to fall within the scope of claim of the present invention.
Claims (11)
1. a rear surface of solar cell passivation local diffusion manufacture method, it includes:
(1) in a silicon wafer layer bottom surface, be provided with the shielding of a plurality of separation;
(2) in this silicon wafer layer bottom surface, carry out etching operation, make this silicon wafer layer relatively expose and form an electrode processing department in the position of this shielding place, the shape of this electrode processing department for protruding, respectively between this electrode processing department, form an erosion concave surface of this silicon wafer layer bottom surface, and this electrode processing department is joined with an electrode processing junction and this shielding;
(3) in the bottom surface of this silicon wafer layer, carry on the back the processing of surface field, make this silicon wafer layer bottom surface form a passivating film;
(4) this shielding is removed, this electrode processing junction is exposed;
(5) in this passivating film below, form a metal level, and the operation that the metal of this metal level is combined with silicon is carried out in heating, this electrode processing department stretches in this metal level, making the metal of this metal level hot melt and the electrode processing department of this silicon wafer layer join to touching reacts to each other, continue and make this electrode processing department and this metal interlevel form at least one the first electrode junction layer, this the first electrode junction layer comprises a metal silicon alloy layer, and establish one first electrode in this first electrode junction layer place, the shape that this first electrode is protrusion also protrudes from this passivating film and stretches in this metal level.
2. rear surface of solar cell passivation local diffusion manufacture method as claimed in claim 1, wherein the metal of this metal level is following one or a combination set of: aluminium, silver, copper, tin, titanium or nickel.
3. rear surface of solar cell passivation local diffusion manufacture method as claimed in claim 1, this first electrode wherein, it is for one of following: alusil alloy layer, silver-colored silicon alloy layer, cupro silicon layer, tin silicon alloy layer, titanium silicon layer, nickel silicon alloy layer.
4. rear surface of solar cell passivation local diffusion manufacture method as claimed in claim 1, wherein this silicon wafer layer end face is provided with a micro-structural, and be provided with one second antireflective coating in this micro-structural, this second antireflective coating is provided with at least one the second electrode, this second antireflective coating comprises a silicon nitride layer, and this shielding is made with anticorrosive, antiacid base material.
5. rear surface of solar cell passivation local diffusion manufacture method as claimed in claim 1, wherein this passivating film includes an alumina layer and the first antireflective coating, this first antireflective coating is located on the erosion concave surface of this silicon wafer layer, this alumina layer is located on this first antireflective coating, and this first antireflective coating comprises a silicon nitride layer.
6. rear surface of solar cell passivation local diffusion manufacture method as claimed in claim 1, wherein, in the aluminium dispersion operation of this first electrode, its machine direction makes the electrode processing department of this silicon wafer layer be the setting of protrusion.
7. a rear surface of solar cell passivation local diffusion structure, it includes:
One silicon wafer layer, the bottom surface of this silicon wafer layer is provided with the electrode processing department of a plurality of protrusions, respectively between this electrode processing department, forms an erosion concave surface of this silicon wafer layer bottom surface, and the end limit of this electrode processing department has a terminal area;
One passivating film, is located on the erosion concave surface of this silicon wafer layer, and the shape that this electrode processing department is protrusion also protrudes from this passivating film;
One first electrode, is located at an electrode junction layer, and this electrode junction layer is located on the terminal area of this electrode processing department, and this first electrode junction layer is a metal silicon alloy layer, and the shape that this first electrode is protrusion also protrudes from this passivating film.
8. rear surface of solar cell passivation local diffusion structure as claimed in claim 7, this first electrode wherein, it is for one of following: alusil alloy layer, silver-colored silicon alloy layer, cupro silicon layer, tin silicon alloy layer, titanium silicon layer, nickel silicon alloy layer.
9. rear surface of solar cell passivation local diffusion structure as claimed in claim 7, wherein the end face of this silicon wafer layer is provided with a micro-structural, and this micro-structural is provided with one second antireflective coating.
10. rear surface of solar cell passivation local diffusion structure as claimed in claim 9, wherein this second antireflective coating comprises a silicon nitride layer, this second antireflective coating is provided with at least one the second electrode.
11. rear surface of solar cell passivation local diffusion structures as claimed in claim 7, wherein this passivating film includes an alumina layer and the first antireflective coating, this first antireflective coating is to be located on this erosion concave surface, this first antireflective coating comprises a silicon nitride layer, and this alumina layer is located on this first antireflective coating.
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| TW101132651 | 2012-09-07 | ||
| TW101132651A TW201411866A (en) | 2012-09-07 | 2012-09-07 | Passivation local diffusion structure of solar cell rear and the manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078177A (en) * | 2014-09-22 | 2017-08-18 | 京瓷株式会社 | Solar cell device |
| CN112786713A (en) * | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | Efficient ultrathin copper indium gallium selenide thin-film solar cell and preparation method thereof |
| CN113690326A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Solar cell with long service life and strong conductivity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040187916A1 (en) * | 2001-08-31 | 2004-09-30 | Rudolf Hezel | Solar cell and method for production thereof |
| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| CN101632180A (en) * | 2007-02-08 | 2010-01-20 | 无锡尚德太阳能电力有限公司 | Hybrid silicon solar cells and method of fabricating same |
| US20120012175A1 (en) * | 2010-07-19 | 2012-01-19 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
| TW201225309A (en) * | 2010-12-06 | 2012-06-16 | Big Sun Energy Tech Inc | Method of fabricating rear surface point contact of solar cells |
| CN102610664A (en) * | 2011-01-19 | 2012-07-25 | Lg电子株式会社 | Solar Cell |
-
2012
- 2012-09-07 TW TW101132651A patent/TW201411866A/en unknown
-
2013
- 2013-04-27 CN CN201310150389.3A patent/CN103681951A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040187916A1 (en) * | 2001-08-31 | 2004-09-30 | Rudolf Hezel | Solar cell and method for production thereof |
| CN101632180A (en) * | 2007-02-08 | 2010-01-20 | 无锡尚德太阳能电力有限公司 | Hybrid silicon solar cells and method of fabricating same |
| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| US20120012175A1 (en) * | 2010-07-19 | 2012-01-19 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
| TW201225309A (en) * | 2010-12-06 | 2012-06-16 | Big Sun Energy Tech Inc | Method of fabricating rear surface point contact of solar cells |
| CN102610664A (en) * | 2011-01-19 | 2012-07-25 | Lg电子株式会社 | Solar Cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078177A (en) * | 2014-09-22 | 2017-08-18 | 京瓷株式会社 | Solar cell device |
| CN112786713A (en) * | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | Efficient ultrathin copper indium gallium selenide thin-film solar cell and preparation method thereof |
| CN112786713B (en) * | 2021-01-26 | 2023-08-25 | 凯盛光伏材料有限公司 | High-efficiency ultrathin copper indium gallium selenium thin-film solar cell and preparation method thereof |
| CN113690326A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Solar cell with long service life and strong conductivity |
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|---|---|
| TW201411866A (en) | 2014-03-16 |
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