TW201411866A - Passivation local diffusion structure of solar cell rear and the manufacturing method thereof - Google Patents
Passivation local diffusion structure of solar cell rear and the manufacturing method thereof Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000009792 diffusion process Methods 0.000 title claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 210000003298 dental enamel Anatomy 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 9
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 8
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 claims description 4
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012943 hotmelt Substances 0.000 claims description 4
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000004063 acid-resistant material Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 2
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 claims 2
- 229910000691 Re alloy Inorganic materials 0.000 claims 1
- MYXPXPFUKKHRQQ-UHFFFAOYSA-N [Ti].[Re] Chemical compound [Ti].[Re] MYXPXPFUKKHRQQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 120
- 239000011800 void material Substances 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000010147 laser engraving Methods 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- QNTVPKHKFIYODU-UHFFFAOYSA-N aluminum niobium Chemical compound [Al].[Nb] QNTVPKHKFIYODU-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-germanium Chemical compound 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本發明係有關於一種太陽能電池構成及其製造方法，尤指一種利用背面鈍化局部擴散以填補矽片層空洞，使具有較佳元件使用壽命及提升其能量轉換效率之太陽能電池背面鈍化局部擴散結構及其製造方法。 The invention relates to a solar cell composition and a manufacturing method thereof, in particular to a solar cell back passivation local diffusion structure which utilizes back passivation local diffusion to fill the cavity layer void, and has better component lifetime and improved energy conversion efficiency. And its manufacturing method.
按，太陽能電池又稱為太陽能晶片或光電池，是一種利用太陽光發電的光電半導體元件。藉其以光照射在不同導體或半導體上，光子與導體或半導體中的自由電子產生作用，進而瞬間就可輸出電壓及電流，故其在物理上則稱為太陽能光伏(簡稱光伏Photovoltaic/PV)。而因太陽能電池發電是一種可再生的環保發電方式，其發電過程中不會產生二氧化碳等溫室氣體，不會對環境造成污染，是目前相當成熟的綠能應用。 According to the solar cell, also known as a solar wafer or a photovoltaic cell, is an optoelectronic semiconductor component that uses solar power to generate electricity. By using light to illuminate different conductors or semiconductors, photons interact with free electrons in the conductor or semiconductor, and thus output voltage and current in an instant, so it is physically called solar photovoltaic (PV Photovoltaic/PV). . Because solar cell power generation is a renewable and environmentally friendly power generation method, it does not generate greenhouse gases such as carbon dioxide during power generation, and does not pollute the environment. It is a mature green energy application.
習知太陽能電池之製造方法如第1圖所示，其步驟包括：(1)於一矽片層80(晶圓)頂面之微結構81上設有一第二減反射膜92及底面設有形成一背表面場(BSF/Back Surface Field)之鈍化膜90，該鈍化膜90係包括有一氧化鋁層93(Al2O3)及第一減反射膜91，其中該第一減反射膜91、第二減反射膜92係可為氮化矽層(SiNx)；繼(2)於該矽片層80之鈍化膜90(背表面場)以雷射82進行蝕刻，並形成複數開孔83，且該開孔83並深入至該矽片層80；繼(3)進行燒結程序，即於該矽片層80之鈍化膜90(第一減反射膜91)下方形成一鋁層94(Al)，並加熱進行鋁矽結合，即由該鋁層94使鋁進入該開孔83(矽片層80)中，用以形成第一電極95。繼(4)當進行鋁擴散進入該開孔83中時，該第一電極95之上方(前端)會形成一鋁矽合金層951及空洞84，其中，該鋁矽合金層951係為進行鋁擴散時鋁與該矽片層80接觸端之熱熔結合物，而該空洞84即為矽片層80之所被熱熔析出之空間部份；繼於該矽片層80(晶圓)頂面之第二減反射膜92上設有第二電極96。 The manufacturing method of the conventional solar cell is as shown in FIG. 1 , and the steps thereof include: (1) providing a second anti-reflection film 92 and a bottom surface on the microstructure 81 of the top surface of the wafer layer 80 (wafer). Forming a passivation film 90 of a back surface field (BSF/Back Surface Field), the passivation film 90 includes an aluminum oxide layer 93 (Al 2 O 3 ) and a first anti-reflection film 91, wherein the first anti-reflection film 91 The second anti-reflection film 92 may be a tantalum nitride layer (SiNx); the passivation film 90 (back surface field) of the (2) passivation layer 80 is etched by the laser 82, and a plurality of openings 83 are formed. And the opening 83 penetrates into the enamel layer 80; following (3) a sintering process is performed, that is, an aluminum layer 94 (Al is formed under the passivation film 90 (first anti-reflection film 91) of the enamel layer 80. And heating to perform aluminum bismuth bonding, that is, aluminum is introduced into the opening 83 (the enamel layer 80) by the aluminum layer 94 to form the first electrode 95. (4) When aluminum is diffused into the opening 83, an aluminum-bismuth alloy layer 951 and a cavity 84 are formed above (front end) of the first electrode 95, wherein the aluminum-bismuth alloy layer 951 is made of aluminum. a thermally fused bond of aluminum to the contact end of the enamel layer 80 during diffusion, and the void 84 is the portion of the enamel layer 80 that is thermally melted; subsequent to the enamel layer 80 (wafer) top A second electrode 96 is disposed on the second anti-reflection film 92 of the surface.
前述該習知太陽能電池之製造方法雖可完成太陽能電池之製造，但該 製造方法所形成之構成仍有缺失存在，例如：當進行前述鋁矽結合之加熱及冷卻階段時，因矽的擴散速率與鋁的擴散速率不相等，並由於合金相中的矽、鋁濃度與鋁層差異許多，且當高溫時鋁為熱熔液態，而矽除了在鋁矽合金外皆為固態，故矽會在開孔83(矽片層80)中受到熱熔液態的鋁而侵蝕此區域，即固態矽會融入該熱熔鋁中而形成該鋁矽合金層951，而當冷卻階段鋁層中矽含量較低，使得合金層會較容易往鋁層移動(矽為固態)，開孔中矽的原位置將形成空洞，且此時固態矽無法填入該空洞，而熱熔液態的鋁矽共熔物來不及填入該空洞，此為前述該空洞84形成之原因。而當該習知太陽能電池之空洞84形成後，將影響其能量轉換的運作狀態，使得其能量轉換效率不佳，且另一面亦將影響元件之使用壽命，顯非理想之設計。 The manufacturing method of the conventional solar cell described above can complete the manufacture of a solar cell, but The composition formed by the manufacturing method still has a defect. For example, when the heating and cooling stages of the aluminum-bismuth combination are performed, the diffusion rate of germanium is not equal to the diffusion rate of aluminum, and the concentration of germanium and aluminum in the alloy phase is The aluminum layer has many differences, and when the aluminum is hot-melted at a high temperature, and the crucible is solid in addition to the aluminum-bismuth alloy, the crucible is eroded by the hot-melt liquid aluminum in the opening 83 (the batt layer 80). The region, that is, the solid niobium is incorporated into the hot-melt aluminum to form the aluminum-niobium alloy layer 951, and when the aluminum layer in the cooling stage is low in content, the alloy layer is relatively easy to move toward the aluminum layer (矽 is solid), The original position of the crucible in the hole will form a void, and at this time, the solid crucible cannot fill the void, and the hot-melt liquid aluminum crucible eutectic is too late to fill the void, which is the reason for the formation of the cavity 84 described above. When the cavity 84 of the conventional solar cell is formed, the operation state of the energy conversion will be affected, so that the energy conversion efficiency is not good, and the other side will also affect the service life of the component, which is a non-ideal design.
再者，由於該習知太陽能電池之製造方法，其於背表面場形成第一電極時需先以雷射進行蝕刻，使形成複數開孔83然後再進行鋁矽結合，以完成該第一電極之製作。該雷射蝕刻係以雷射雕刻機來進行Laser Isolation及局部表面處理之技術製程，而因該雷射加工系統成本相當高(產出速度也不易符合太陽能電池之需求)，且其設備維護等級亦相當高(無塵室設備)，整體上將大為影響太陽能電池製造之成本經濟效益，故亦有一併加以改良、突破之必要。因此如何解決習知太陽能電池製造上相關缺失問題，誠是業者研發、突破之重點方向。 Furthermore, due to the manufacturing method of the conventional solar cell, when the first electrode is formed on the back surface field, it is first etched by laser, so that a plurality of openings 83 are formed and then aluminum-germanium is combined to complete the first electrode. Production. The laser etching is performed by a laser engraving machine for the technical process of Laser Isolation and partial surface treatment, and the laser processing system is relatively high in cost (the output speed is not easy to meet the requirements of the solar cell), and the equipment maintenance level thereof. It is also quite high (clean room equipment), which will greatly affect the cost-effectiveness of solar cell manufacturing as a whole, so it is necessary to improve and break through. Therefore, how to solve the related missing problems in the manufacture of solar cells is a key direction for the development and breakthrough of the industry.
緣此，本發明人有鑑於習知太陽能電池製造、結構上之缺失問題及其方法、構成設計上未臻理想之事實，本案發明人即著手研發構思其解決方案，希望能開發出一種更具品質穩定性、製造經濟效率性的太陽能電池構成及其製造方法，以促進此業之發展，遂經多時之構思而有本發明之產生。 Therefore, the inventors of the present invention have developed and conceived their solutions in view of the conventional solar cell manufacturing, structural problems and methods, and the fact that the design is not ideal. The invention relates to a solar cell composition of quality stability and economical efficiency and a manufacturing method thereof for promoting the development of the industry, and the present invention has been produced by a long-term concept.
本發明之目的在提供一種太陽能電池背面鈍化局部擴散結構及其製造方法，其能使燒結製程所形成之矽片層空洞得以填補，使具有較佳元件使用壽命及提升其能量轉換效率者。 The object of the present invention is to provide a solar cell back passivation partial diffusion structure and a manufacturing method thereof, which can fill the cavity layer void formed by the sintering process, so as to have better component life and improve energy conversion efficiency.
本發明之再一目的在提供一種太陽能電池背面鈍化局部擴散 (Passivate Emitter Rear-side Locally Diffuse，簡稱PERL)結構及其製造方法，其能減少以雷射雕刻機來進行雷射蝕刻(Laser Isolation及局部表面處理之)之技術製程，使降低加工系統成本及符合太陽能電池之製造經濟效益，進而積極提升其產業競爭力者。 A further object of the present invention is to provide a solar cell back passivation local diffusion (Passivate Emitter Rear-side Locally Diffuse, referred to as PERL) structure and manufacturing method thereof, which can reduce the technical process of laser etching (Laser Isolation and partial surface treatment) by laser engraving machine, thereby reducing the processing system cost and In line with the economic benefits of solar cell manufacturing, and thus actively enhance their industrial competitiveness.
本發明為了達成上述之目的及功效，其所採用之方法技術包括：(1)在一矽片層底面設有複數分離之遮罩；(2)於該矽片層底面進行蝕刻操作，使該矽片層相對該遮罩處之部位露出而形成一電極加工部，該電極加工部係形成一凸出之形狀，而各該電極加工部間則形成該矽片層底面之一蝕凹面，且該電極加工部係以一電極加工接面與該遮罩相接；(3)於該矽片層之底面進行背表面場之處理，使該矽片層底面形成一鈍化膜；(4)將該遮罩去除，使該電極加工接面露出；(5)於該鈍化膜下方形成一金屬層，並加熱進行該金屬層之金屬與矽結合之操作，該電極加工部係伸入該金屬層中，使該金屬層熱熔之金屬與該矽片層之電極加工部相接觸及相互反應，繼使該電極加工部與該金屬層間形成至少一第一電極接面層，該第一電極接面層係包括一金屬矽合金層，並於該第一電極接面層處設一第一電極，該第一電極係為凸出之形狀並凸出於該鈍化膜且伸入該金屬層中。 In order to achieve the above objects and effects, the method of the present invention comprises: (1) providing a plurality of separate masks on the bottom surface of a enamel layer; and (2) performing an etching operation on the bottom surface of the enamel layer to Forming an electrode processing portion with a portion of the enamel layer exposed to the mask portion, the electrode processing portion forming a convex shape, and each of the electrode processing portions forms an etched surface of the bottom surface of the enamel layer, and The electrode processing portion is connected to the mask by an electrode processing interface; (3) performing a back surface field treatment on the bottom surface of the enamel layer to form a passivation film on the bottom surface of the enamel layer; (4) Removing the mask to expose the electrode processing joint; (5) forming a metal layer under the passivation film, and heating to perform metal to metal bonding with the germanium, the electrode processing portion extending into the metal layer The metal that is hot-melted by the metal layer is in contact with and reacts with the electrode processing portion of the enamel layer, and then at least a first electrode junction layer is formed between the electrode processing portion and the metal layer, and the first electrode is connected The surface layer includes a metal tantalum alloy layer, and the first Junction electrode layer disposed at a first electrode, the first electrode system is of convex shape and protrudes from the passivation film and extending into the metal layer.
本發明太陽能電池背面鈍化局部擴散結構係包括有：一矽片層，該矽片層之底面係設有複數凸出之電極加工部，而各該電極加工部間則形成該矽片層底面之一蝕凹面，該電極加工部之端邊係具有一端接面；一鈍化膜，係設於該矽片層之蝕凹面上，該電極加工部係凸出於該鈍化膜；一第一電極，該第一電極係設於一電極接面層，該電極接面層係設於該電極加工部之端接面上，該第一電極接面層係為一金屬矽合金層，該第一電極係為凸出之形狀並凸出於該鈍化膜。 The surface passivation partial diffusion structure of the solar cell of the present invention comprises: a ruthenium layer, the bottom surface of the enamel layer is provided with a plurality of convex electrode processing portions, and the bottom surface of the enamel layer is formed between the electrode processing portions. An etched concave surface, the end of the electrode processing portion has a one end junction; a passivation film is disposed on the etched surface of the enamel layer, the electrode processing portion protrudes from the passivation film; a first electrode, The first electrode is disposed on an electrode junction layer, the electrode junction layer is disposed on the termination surface of the electrode processing portion, and the first electrode junction layer is a metal tantalum alloy layer, the first electrode It is convex and protrudes from the passivation film.
茲為使 貴審查委員對本發明之技術特徵及所達成之功效更進一步之 了解與認識，謹佐以較佳之實施例圖及配合詳細之說明，說明如後： In order to make the reviewer's technical characteristics and the effects achieved by the reviewer further Understanding and understanding, please refer to the better example diagram and the detailed description, as explained below:
請參閱第3圖，用以說明本發明太陽能電池背面鈍化局部擴散製造方法，如圖所示，本發明製造方法之步驟包括： Please refer to FIG. 3 for explaining the method for manufacturing the surface passivation of the solar cell of the present invention. As shown in the figure, the steps of the manufacturing method of the present invention include:
(1)於一矽片層10(晶圓)頂面設一微結構11，並於該微結構11上設有一第二減反射膜13，該第二減反射膜13係可為氮化矽層(SiNx)等。 (1) a microstructure 11 is disposed on a top surface of the wafer layer 10 (wafer), and a second anti-reflection film 13 is disposed on the microstructure 11. The second anti-reflection film 13 may be tantalum nitride. Layer (SiNx), etc.
(2)於該矽片層10底面設有分離之複數遮罩100(Mask)，該遮罩100係以抗腐蝕、抗酸鹼材料製成。 (2) A separate plurality of masks 100 are provided on the bottom surface of the enamel layer 10, and the mask 100 is made of a corrosion-resistant, acid-resistant material.
(3)於該矽片層10底面進行蝕刻操作，該蝕刻操作係可為化學蝕刻或其他蝕刻技術等操作，但不為所限，並使該矽片層10相對該遮罩100處之部位露出而形成一電極加工部12，該電極加工部係形成一凸出之形狀，而各該電極加工部12間則形成該矽片層10底面之一蝕凹面101，另，該電極加工部12係以一電極加工接面120與該遮罩100相接。 (3) performing an etching operation on the bottom surface of the enamel layer 10, which may be a chemical etching or other etching technique, but is not limited, and the portion of the enamel layer 10 is opposite to the mask 100. Exposed to form an electrode processing portion 12, the electrode processing portion is formed into a convex shape, and between the electrode processing portions 12, an etched surface 101 of the bottom surface of the cymbal layer 10 is formed, and the electrode processing portion 12 is formed. The mask 100 is connected by an electrode processing interface 120.
(4)於該矽片層10底面進行背表面場(BSF/Back Surface Field)之處理，使該矽片層10底面形成一鈍化膜，該鈍化膜係包括有一氧化鋁層20(Al2O3)及第一減反射膜30，其中，該第一減反射膜30係設於該矽片層10之蝕凹面101上，而該氧化鋁層20係設於該第一減反射膜30上；該第一減反射膜30係可為氮化矽層(SiNx)等。 (4) performing a back surface field (BSF/Back Surface Field) treatment on the bottom surface of the enamel layer 10 to form a passivation film on the bottom surface of the enamel layer 10, the passivation film including an aluminum oxide layer 20 (Al 2 O 3 ) and a first anti-reflection film 30, wherein the first anti-reflection film 30 is disposed on the concave surface 101 of the chop layer 10, and the aluminum oxide layer 20 is disposed on the first anti-reflection film 30. The first anti-reflection film 30 may be a tantalum nitride layer (SiNx) or the like.
(5)將遮罩100於該電極加工部12下方之遮罩100去除，使該電極加工部12之電極加工接面120露出。 (5) The mask 100 under the electrode processing portion 12 of the mask 100 is removed, and the electrode processing surface 120 of the electrode processing portion 12 is exposed.
(6)進行燒結操作，即於該矽片層10之背表面場(鈍化膜)進行一金屬與矽結合之操作以完成電極製作，其係於該第一減反射膜30及該電極加工部12(電極加工接面120)下方形成一金屬層41(Al)，並加熱進行該金屬與矽結合，使該金屬層41熱熔之金屬與該矽片層10之電極加工部12相接觸及相互反應，繼使該電極加工部12與該金屬層41間形成至少一第一電極接面層42，該第一電極接面層42係包括一金屬矽合金層，並於該第一電極接面層42處設一第一電極40，該第一電極40係為凸出之形狀並凸出於 該鈍化膜且伸入該金屬層41中。繼於該矽片層10(晶圓)頂面之第二減反射膜13上設有第二電極15。 (6) performing a sintering operation, that is, performing a metal-germanium bonding operation on the back surface field (passivation film) of the enamel layer 10 to complete electrode fabrication, which is applied to the first anti-reflection film 30 and the electrode processing portion. A metal layer 41 (Al) is formed under the 12 (electrode processing interface 120), and the metal is bonded to the crucible by heating, so that the metal of the metal layer 41 is in contact with the electrode processing portion 12 of the enamel layer 10 and Between the electrode processing portion 12 and the metal layer 41, at least one first electrode interface layer 42 is formed. The first electrode connection layer 42 includes a metal ruthenium alloy layer and is connected to the first electrode. A first electrode 40 is disposed on the surface layer 42. The first electrode 40 is convex and protrudes The passivation film extends into the metal layer 41. A second electrode 15 is provided on the second anti-reflection film 13 on the top surface of the enamel layer 10 (wafer).
其中，上述一金屬與矽結合之操作以完成電極製作，該金屬可為以下之一或其組合，但不以此為限：鋁、銀、銅、錫、鈦或鎳等。 Wherein, the metal is combined with the germanium to complete the electrode fabrication, and the metal may be one or a combination of the following, but not limited thereto: aluminum, silver, copper, tin, titanium or nickel.
其中，上述第一電極40，其材料之選擇可為共用的金屬層或導電材料，例如可為以下之一但不以此為限：鋁矽合金層、銀矽合金層、銅矽合金層、錫矽合金層、鈦矽合金層、鎳矽合金層等。 The material of the first electrode 40 may be a common metal layer or a conductive material, for example, one of the following, but not limited thereto: an aluminum-bismuth alloy layer, a silver-antimony alloy layer, a copper-bismuth alloy layer, Tin-bismuth alloy layer, titanium-niobium alloy layer, nickel-niobium alloy layer, and the like.
前述步驟(6)之進行一金屬與矽結合之操作，可為進行該金屬之擴散，雖然矽的擴散速率與該金屬的擴散速率不相等，但是當電極加工部12之矽擴散至該金屬與矽合金層(第一電極接面層42)之位置後，由於該電極加工部12係為凸出之形狀設計，將使該電極加工部12內之矽擴散後所形成之空洞，得以由具凸出設計之電極加工部12之周圍熱熔之液態金屬擴散進入而填補該空洞，故最終其構成不會有空洞之形成。因此，本發明在形成該第一電極40之金屬擴散操作中，其加工方向係使該矽片層10之電極加工部12呈凸出之形狀，即其構成上係使該電極加工部12伸入該金屬層41中，使該電極加工部12內之矽擴散後所形成之空洞，得以由具凸出設計之電極加工部12之周圍熱熔之液態金屬(該金屬層41)擴散進入而填補該空洞，而不會如習知之結構形成一空洞；如此，本發明太陽能電池背面鈍化局部擴散製造方法即得以消除習知技術其空洞產生之缺失問題。 In the foregoing step (6), a metal-germanium operation is performed to perform diffusion of the metal. Although the diffusion rate of the germanium is not equal to the diffusion rate of the metal, when the electrode processing portion 12 is diffused to the metal and After the position of the tantalum alloy layer (the first electrode contact layer 42), the electrode processed portion 12 is designed to have a convex shape, and the void formed by the diffusion of the flaw in the electrode processed portion 12 can be used. The liquid metal which is melted around the electrode processing portion 12 of the protruding design diffuses into and fills the void, so that the formation of the void is not formed. Therefore, in the metal diffusion operation for forming the first electrode 40, the processing direction is such that the electrode processed portion 12 of the enamel layer 10 has a convex shape, that is, the electrode processing portion 12 is formed. Into the metal layer 41, the void formed by the diffusion of the crucible in the electrode processing portion 12 is diffused into the liquid metal (the metal layer 41) which is thermally melted around the electrode processing portion 12 having the convex design. The void is filled without forming a void as in the conventional structure; thus, the solar cell back passivation local diffusion manufacturing method of the present invention eliminates the problem of the lack of void generation in the prior art.
請一併參閱第4圖，係本發明局部放大倒置示意圖，基於前述製造方法，本發明太陽能電池背面鈍化局部擴散結構係包括有一矽片層10(晶圓)、氧化鋁層20(Al2O3)、第一減反射膜30、第一電極40及第二電極15；該矽片層10之頂面係設一微結構11，該微結構11上設有一第二減反射膜13，該第二減反射膜13係可為氮化矽層(SiNx)等。該矽片層10之底面係設有複數凸出之電極加工部12，而各該電極加工部12間則形成該矽片層10底面之一蝕凹面101，該電極加工部12之端邊係具有一端接面121。 Please refer to FIG. 4, which is a partially enlarged inverted schematic view of the present invention. According to the foregoing manufacturing method, the solar cell back passivation local diffusion structure of the present invention comprises a germanium layer 10 (wafer) and an aluminum oxide layer 20 (Al 2 O). 3), a first antireflection film 30, the first electrode 40 and the second electrode 15; Xipian top surface of the layer 10 is provided a microstructure of the system 11, is provided with a second antireflection film 13 of the microstructure 11, the The second anti-reflection film 13 may be a tantalum nitride layer (SiNx) or the like. The bottom surface of the enamel layer 10 is provided with a plurality of embossed electrode processing portions 12, and between the electrode processing portions 12, an etched surface 101 of the bottom surface of the cymbal layer 10 is formed, and the end of the electrode processing portion 12 is There is one end junction 121.
該第一減反射膜30係設於該矽片層10之蝕凹面101上，該第一減反 射膜30係可為氮化矽層(SiNx)等，該氧化鋁層20係設於該第一減反射膜30上，該氧化鋁層20及第一減反射膜30係構成一鈍化膜，且該電極加工部12係為凸出之形狀並凸出該第一減反射膜30(鈍化膜)。 The first anti-reflection film 30 is disposed on the concave surface 101 of the enamel layer 10, and the first anti-reflection The film 30 may be a tantalum nitride layer (SiNx) or the like, and the aluminum oxide layer 20 is disposed on the first anti-reflection film 30, and the aluminum oxide layer 20 and the first anti-reflection film 30 form a passivation film. Further, the electrode processing portion 12 has a convex shape and protrudes from the first anti-reflection film 30 (passivation film).
該第一電極40係設於第一電極接面層42，該第一電極接面層42係設於該電極加工部12之端接面121上，該第一電極接面層42係為一金屬矽合金層，該第一電極40係為凸出之形狀並凸出於該鈍化膜；一金屬層41係設於該第一減反射膜30及第一電極接面層42上，即該金屬層41係包覆該凸出之電極加工部12及第一電極接面層42(該金屬矽合金層)，亦即該電極加工部12係伸入該金屬層41。該第二電極15係設於該矽片層10之頂面的第二減反射膜13上，該第一電極40、第二電極15係分別形成太陽能電池之正、負極。 The first electrode 40 is disposed on the first electrode interface layer 42 . The first electrode connection layer 42 is disposed on the termination surface 121 of the electrode processing portion 12 . The first electrode connection layer 42 is a first electrode connection layer 42 . a metal bismuth alloy layer, the first electrode 40 is convex and protrudes from the passivation film; a metal layer 41 is disposed on the first anti-reflection film 30 and the first electrode junction layer 42, that is, The metal layer 41 covers the protruding electrode processed portion 12 and the first electrode contact layer 42 (the metal tantalum alloy layer), that is, the electrode processed portion 12 extends into the metal layer 41. The second electrode 15 is disposed on the second anti-reflection film 13 on the top surface of the enamel layer 10. The first electrode 40 and the second electrode 15 form positive and negative electrodes of the solar cell, respectively.
其中，上述結構金屬層41之金屬可為以下之一或其組合，但不以此為限：鋁、銀、銅、錫、鈦或鎳等。 The metal of the structural metal layer 41 may be one or a combination of the following, but not limited thereto: aluminum, silver, copper, tin, titanium or nickel.
其中，上述結構第一電極40，其材料之選擇可為共用的金屬層或導電材料，例如可為以下之一但不以此為限：鋁矽合金層、銀矽合金層、銅矽合金層、錫矽合金層、鈦矽合金層、鎳矽合金層等。 The first electrode 40 of the above structure may be selected from a common metal layer or a conductive material, for example, one of the following, but not limited thereto: an aluminum-bismuth alloy layer, a silver-antimony alloy layer, and a copper-bismuth alloy layer. , tin-bismuth alloy layer, titanium-niobium alloy layer, nickel-niobium alloy layer, and the like.
換言之，本發明太陽能電池背面鈍化局部擴散結構及其製造方法，因該電極加工部12為凸出之形狀並凸出於該鈍化膜且伸入該金屬層41中，因此使得該第一電極40也為凸出之形狀並凸出於該鈍化膜且伸入該金屬層41中，如此使得燒結製程所形成之矽片層空洞得以填補，此凸出電極之結構減少了電極與周圍材料間的接合空隙，使具有較佳元件使用壽命及提升其能量轉換效率，且本發明同時能減少以雷射雕刻機來進行雷射蝕刻(Laser Isolation及局部表面處理之)之技術製程，使降低加工系統成本及符合太陽能電池之製造經濟效益，進而積極提升其產業競爭力。 In other words, the solar cell back passivation partial diffusion structure of the present invention and the method of manufacturing the same, wherein the electrode processing portion 12 has a convex shape and protrudes from the passivation film and protrudes into the metal layer 41, thereby making the first electrode 40 It is also convex and protrudes from the passivation film and protrudes into the metal layer 41, so that the cavity layer formed by the sintering process is filled, and the structure of the protruding electrode reduces the gap between the electrode and the surrounding material. Bonding the gap to better the life of the component and improving its energy conversion efficiency, and the invention can reduce the technical process of laser etching (Laser Isolation and partial surface treatment) by the laser engraving machine, so as to reduce the processing system Cost and compliance with the economic benefits of solar cell manufacturing, and thus actively enhance its industrial competitiveness.
綜上所述，本發明確實為一相當優異之創思，爰依法提出發明專利申請；惟上述說明之內容，僅為本發明之較佳實施例而已，舉凡依本發明之技術手段所延伸之變化，理應落入本發明之專利申請範圍。 In summary, the present invention is indeed a rather excellent invention, and the invention patent application is filed according to the law; however, the above description is only a preferred embodiment of the present invention, and the technical means according to the present invention are extended. Changes are intended to fall within the scope of the patent application of the present invention.
10‧‧‧矽片層 10‧‧‧矽 layer
100‧‧‧遮罩 100‧‧‧ mask
101‧‧‧蝕凹面 101‧‧ 蚀 concave surface
11‧‧‧微結構 11‧‧‧Microstructure
12‧‧‧電極加工部 12‧‧‧Electrical Processing Department
120‧‧‧電極加工接面 120‧‧‧Electrode processing joint
121‧‧‧端接面 121‧‧‧ terminating faces
13‧‧‧第二減反射膜 13‧‧‧Second anti-reflection film
15‧‧‧第二電極 15‧‧‧second electrode
20‧‧‧氧化鋁層 20‧‧‧Alumina layer
30‧‧‧第一減反射膜 30‧‧‧First anti-reflection film
40‧‧‧第一電極 40‧‧‧First electrode
41‧‧‧金屬層 41‧‧‧metal layer
42‧‧‧第一電極接面層 42‧‧‧First electrode junction layer
第1圖為習知太陽能電池之製造方法流程示意圖。 FIG. 1 is a schematic flow chart of a manufacturing method of a conventional solar cell.
第2圖為習知太陽能電池之局部放大倒置示意圖。 Figure 2 is a partial enlarged inverted view of a conventional solar cell.
第3圖為本發明太陽能電池之製造方法流程示意圖。 FIG. 3 is a schematic flow chart of a method for manufacturing a solar cell of the present invention.
第4圖為本發明太陽能電池之局部放大倒置示意圖。 Fig. 4 is a partially enlarged inverted view of the solar cell of the present invention.
10‧‧‧矽片層 10‧‧‧矽 layer
101‧‧‧蝕凹面 101‧‧ 蚀 concave surface
12‧‧‧電極加工部 12‧‧‧Electrical Processing Department
121‧‧‧端接面 121‧‧‧ terminating faces
20‧‧‧氧化鋁層 20‧‧‧Alumina layer
30‧‧‧第一減反射膜 30‧‧‧First anti-reflection film
40‧‧‧第一電極 40‧‧‧First electrode
41‧‧‧金屬層 41‧‧‧metal layer
42‧‧‧第一電極接面層 42‧‧‧First electrode junction layer
Claims (11)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101132651A TW201411866A (en) | 2012-09-07 | 2012-09-07 | Passivation local diffusion structure of solar cell rear and the manufacturing method thereof |
| CN201310150389.3A CN103681951A (en) | 2012-09-07 | 2013-04-27 | Solar cell back passivation local diffusion structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101132651A TW201411866A (en) | 2012-09-07 | 2012-09-07 | Passivation local diffusion structure of solar cell rear and the manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201411866A true TW201411866A (en) | 2014-03-16 |
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| TW101132651A TW201411866A (en) | 2012-09-07 | 2012-09-07 | Passivation local diffusion structure of solar cell rear and the manufacturing method thereof |
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| CN (1) | CN103681951A (en) |
| TW (1) | TW201411866A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3200242A4 (en) * | 2014-09-22 | 2018-07-11 | KYOCERA Corporation | Solar cell element |
| CN112786713B (en) * | 2021-01-26 | 2023-08-25 | 凯盛光伏材料有限公司 | High-efficiency ultrathin copper indium gallium selenium thin-film solar cell and preparation method thereof |
| CN113690326A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Solar cell with long service life and strong conductivity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10142481A1 (en) * | 2001-08-31 | 2003-03-27 | Rudolf Hezel | Solar cell and method for producing such |
| WO2008098407A1 (en) * | 2007-02-08 | 2008-08-21 | Suntech Power Co., Ltd | Hybrid silicon solar cells and method of fabricating same |
| CN101540350B (en) * | 2009-04-30 | 2010-07-28 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| KR20120011337A (en) * | 2010-07-19 | 2012-02-08 | 삼성전자주식회사 | a solar cell and manufacturing method thereof |
| TWI415272B (en) * | 2010-12-06 | 2013-11-11 | Big Sun Energy Tech Inc | Method of fabricating rear surface point contact of solar cells |
| KR20120084104A (en) * | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | Solar cell |
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2012
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| CN103681951A (en) | 2014-03-26 |
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