CN103663437B - 利用磁控溅射技术制备石墨烯量子点 - Google Patents
利用磁控溅射技术制备石墨烯量子点 Download PDFInfo
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- CN103663437B CN103663437B CN201310518141.8A CN201310518141A CN103663437B CN 103663437 B CN103663437 B CN 103663437B CN 201310518141 A CN201310518141 A CN 201310518141A CN 103663437 B CN103663437 B CN 103663437B
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WO2016045045A1 (zh) * | 2014-09-25 | 2016-03-31 | 深圳粤网节能技术服务有限公司 | 石墨烯量子点的制备方法 |
RU2753399C1 (ru) * | 2020-11-26 | 2021-08-16 | Акционерное общество "Концерн "Созвездие" | Способ создания квантовых точек для элементной базы радиотехники |
CN113421778B (zh) * | 2021-06-21 | 2022-10-21 | 青岛理工大学 | 一种柔性微型超级电容器及其制造方法 |
CN114506843B (zh) * | 2022-02-25 | 2023-06-13 | 电子科技大学 | 一种快速在非金属基底上制备石墨烯薄膜方法 |
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JP3250768B2 (ja) * | 1993-09-28 | 2002-01-28 | アルプス電気株式会社 | ダイヤモンド状炭素膜の形成方法、磁気ヘッドの製造方法および磁気ディスクの製造方法 |
CN101966987B (zh) * | 2010-10-13 | 2012-10-03 | 重庆启越涌阳微电子科技发展有限公司 | 具有负电子亲和势的分形石墨烯材料及其制备方法和应用 |
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Address after: Jin hi tech Zone 266111 Shandong province Qingdao City Department of Road No. 1 building a layer of C2 Island Park Patentee after: QINGDAO HUAGAO GRAPHENE TECHNOLOGY Corp.,Ltd. Address before: 266111 Shandong city of Qingdao province Songyuan Qingdao high tech Industrial Development Zone, No. 17 Qingdao Road, Industrial Technology Research Institute C C1 District 4 floor -1 Patentee before: QINGDAO HUAGAO INK MATERIAL TECHNOLOGY Co.,Ltd. Address after: 266111 Shandong city of Qingdao province Songyuan Qingdao high tech Industrial Development Zone, No. 17 Qingdao Road, Industrial Technology Research Institute C C1 District 4 floor -1 Patentee after: QINGDAO HUAGAO INK MATERIAL TECHNOLOGY Co.,Ltd. Address before: Songyuan road 266033 in Shandong Province, Qingdao high tech Industrial Development Zone, No. 17 Qingdao Industrial Technology Research Institute C C1 District 4 floor -1 Patentee before: QINGDAO HUAGAO ENERGY TECHNOLOGY CO.,LTD. |
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Denomination of invention: Graphene quantum dot prepared by virtue of magnetron sputtering technology Effective date of registration: 20170918 Granted publication date: 20160106 Pledgee: Qingdao high tech Cci Capital Ltd. Pledgor: QINGDAO HUAGAO GRAPHENE TECHNOLOGY Corp.,Ltd. Registration number: 2017370010056 |
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Date of cancellation: 20181113 Granted publication date: 20160106 Pledgee: Qingdao high tech Cci Capital Ltd. Pledgor: QINGDAO HUAGAO GRAPHENE TECHNOLOGY Corp.,Ltd. Registration number: 2017370010056 |
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Denomination of invention: Graphene quantum dot prepared by virtue of magnetron sputtering technology Effective date of registration: 20181123 Granted publication date: 20160106 Pledgee: Qingdao high tech Cci Capital Ltd. Pledgor: QINGDAO HUAGAO GRAPHENE TECHNOLOGY Corp.,Ltd. Registration number: 2018370010124 |