CN101250687A - Rectangle plane magnetron sputtering cathode - Google Patents
Rectangle plane magnetron sputtering cathode Download PDFInfo
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- CN101250687A CN101250687A CNA2008100201397A CN200810020139A CN101250687A CN 101250687 A CN101250687 A CN 101250687A CN A2008100201397 A CNA2008100201397 A CN A2008100201397A CN 200810020139 A CN200810020139 A CN 200810020139A CN 101250687 A CN101250687 A CN 101250687A
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Abstract
The invention relates to a rectangular plane magnetically controlled sputtering cathode, which is provided with a target, a cathode component and a shielding case which is arranged on the periphery of the cathode component, wherein a magnetic circuit mechanism is fixedly arranged on a target seat and is located inside a cathode body, the target is fixedly arranged on the lower portion of the target seat, and the cathode is characterized in that a magnetic conductive plate is arranged on the periphery of the cathode component and located on the inner side and the outer side of the shielding case in a whole circumference mode. The cathode of the invention can effectively increase the stability of a sputtering process and can increase the availability ratio of the target.
Description
Technical field
The present invention relates to vacuum coating film equipment, a kind of rectangle plane magnetron sputtering cathode of more specifically saying so.
Background technology
Rectangle plane magnetron sputtering cathode is one of visual plant of present large-area vacuum plated film.Patent of invention " LINEAR PLANAR-MAGNETRON SPUTTERING APPARATUS WITH RECIPROCATING MAGNET-ARRAY " (contriver David E.Stevenson, United States Patent (USP), the patent No. 5328585) introduced a kind of rectangle plane magnetron sputtering cathode, this negative electrode has the typical structure of rectangle plane magnetron sputtering cathode in the present industry.It is provided with shielding case around cathode, shielding case is connected with positive source and grounding wire, remains with the slit of certain distance between cathode and shielding case.The effect of shielding case is to intercept and capture by non-target part ejected electron, makes it not produce glow discharge, stops the sputter of non-target part, guarantees the purity of film.
" vacuum coating technology and equipment " (Li Yunqi chief editor, Shenyang: Northeast Polytechnic College press, 1992,106-109 page or leaf) is mentioned: the principle of shielding case setting is the clearance distance δ≤r that makes between cathode and the shielding case, i.e. δ≤mE/B
2=3.37U
1/2/ B (wherein, U is the volts DS of magnetron sputtering, U=E δ).At present, when the design magnetic control sputtering cathode, clearance distance δ value is general all in the 1.5-2mm scope.But, do not allow to fill any megohmite between the slit usually, because any weighting material is all easily contaminated, cause shelf depreciation and the conducting short circuit; And in the processing and installation of reality, the uniformity that guarantees the slit is very difficult, particularly in the large-scale rectangular planar magnetic control sputtering cathode, the existence in non-homogeneous slit is easy to cause anode and cathode conducting short circuit, the clearance distance value again can not be greater than this scope, otherwise sputtering phenomenon can take place, the infringement negative electrode.
In addition, also there is following shortcoming in existing rectangle plane magnetron sputtering cathode:
1, the non-homogeneous utilization ratio of degrading serious reduction target of target changes the parameter in the sputter procedure, even can cause the starting the arc or run arc, has a strong impact on the stability of sputter procedure;
2, because target can not get sufficient cooling, and target ftractures easily, distils and dissolves, and target thermal distortion meeting brings dismounting difficulty, target expansion to cut off the generation of faults such as screw and vacuum leakproofness variation.
Summary of the invention
The present invention is for avoiding above-mentioned existing in prior technology weak point, a kind of stability that can effectively improve sputter procedure is provided, improves the rectangle plane magnetron sputtering cathode of the utilization ratio of target.
Technical solution problem of the present invention adopts following technical scheme:
Rectangle plane magnetron sputtering cathode of the present invention has target, cathode assembly and is arranged on the shielding case of cathode assembly periphery, and in the described cathode assembly, magnetic circuit is fixedly installed on the target stand and is positioned at the inside of cathode, and target is fixedly installed on the bottom of target stand.
Constructional feature of the present invention is the periphery at described cathode assembly, the inboard that is positioned at shielding case or the outside, and complete cycle is provided with magnetic conductive board.
Constructional feature of the present invention also is:
Described magnetic conductive board is fixedly installed on the outer side wall of cathode, or at the inner side-wall of shielding case, or on the outer side wall of shielding case.
Described magnetic conductive board adopts the ferromagnetic substance or the soft magnetic materials of magnetic conduction to make.
Shown in Figure 2 is to distribute at the magnetron cathode magnetic line of force of not installing under the magnetic conductive board situation, and at this moment, magnetic line of force 4 has the component on the bigger surface that is parallel to cathode 7 in slit;
Shown in Figure 3 is the magnetron cathode magnetic line of force distribution that magnetic conductive board 23 is installed at the inner side-wall of shielding case, among Fig. 3 as seen, magnetic conductive board 23 has changed the distribution of slit internal magnetic field, make that magnetic line of force is deformed into purpose magnetic line of force 1 in the slit, the magnetic-field component that the place, slit is parallel to cathode 7 surfaces can become very little, and magnetic line of force gradually becomes perpendicular to the cathode surface direction.The magnetic-field component that is parallel to the cathode surface can be reduced to below the 20Gs, promptly not in the magnetic field range (100Gs-1000Gs) of magnetic charging, so just sputtering phenomenon can not take place in the slit, thereby not need to control the width in slit in 1.5-2mm.Therefore, structure setting of the present invention can make the distance in shielding case 2 and 7 slits of cathode be not limited to the scope of 1.5-2mm, can suitably increase the width in slit according to the size of negative electrode, so both solve the slit discharge phenomenon, avoid the generation of conducting short circuit between anode and cathode again.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, among the present invention magnetic conductive board the Distribution of Magnetic Field that has changed cathode and shielding case slit place is set, increased the width in slit, suppressed the electric discharge phenomena at place, slit effectively, avoided anode and cathode conducting short circuit, sputter procedure is stable, reliable.
2, the present invention can improve the homogeneity of Distribution of Magnetic Field effectively by the reasonable setting of magnetic structure, improves the utilization ratio of target and the stability of sputter procedure.
3, the present invention can be provided with heat conduction carbon film and copper backboard between target and target stand, to increase thermocontact area, make target cooling evenly fully, overcome the expand generation of faults such as cutting off screw and vacuum leakproofness variation of dismounting difficulty, target scaling loss, target that target brings because of thermal distortion.
4, assembling and dismounting are convenient in structure setting of the present invention.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the magnetron cathode magnetic line of force distribution schematic diagram that magnetic conductive board is not installed.
Fig. 3 is equipped with the magnetron cathode magnetic line of force distribution schematic diagram of magnetic conductive board at the inner side-wall of shielding case for the present invention.
Fig. 4 is yoke of the present invention and diaphragm structure synoptic diagram.
Fig. 5 is a cathode outer side wall surface parallel magnetic field strength distribution curve of the present invention.
Fig. 6 is a target material surface parallel magnetic field strength distribution curve of the present invention.
Table 1 is the BH curve point of a kind of magnetically permeable material SS430.
Number in the figure: 1 purpose magnetic line of force; 2 shielding cases; 3 protective guards; 4 magnetic line of force; 5 insulation sleeve gaskets; 6 bench insulators; 7 cathodes; 8 cooling water channels; 9 enter the yoke water hole; 10 enter the dividing plate water hole; 11 go out the yoke water hole; 12 yokes; 13 dividing plates; 14 water inlet pipes; 15 internal magnets; utmost point seat in 16; 17 spreader plates; 18 rising pipes; 19 outer pole shoes; 20 external magnets; 21 outer utmost point seats; 22 magnet retaining plates; 23 magnetic conductive boards; 26 target press boxes; 27 targets; 28 heat conduction carbon films; 29 bronze medal backboards; 30 target stands; pole shoe in 31; 32 horizontal shielding cases
Below by embodiment, the invention will be further described in conjunction with the accompanying drawings:
Embodiment
Referring to Fig. 1, present embodiment structure routinely has target 27, cathode assembly and is arranged on the shielding case 2 of cathode assembly periphery, in cathode assembly, magnetic circuit mechanism is fixedly installed on the target stand 30 and is positioned at the inside of cathode 7, and target 27 is fixedly installed on the bottom of target stand 30.
In the present embodiment, in the periphery of cathode assembly, the inboard that is positioned at shielding case 2 or the outside, complete cycle is provided with magnetic conductive board 23.Magnetic conductive board 23 can be fixedly installed on the outer side wall of cathode 7, or is fixedly installed on the inner side-wall of shielding case 2, also can be fixedly installed on the outer side wall of shielding case 2; Magnetic conductive board 23 adopts the ferromagnetic substance or the soft magnetic materials of magnetic conduction to make.
In concrete the enforcement, the corresponding structure setting also comprises:
As shown in Figure 1, magnetic circuit mechanism is set to: internal magnet 15 and external magnet 20 are separately positioned on the centre of dividing plate 13 and on every side, corresponding to internal magnet 15 and external magnet 20 interior utmost point seat 16 and interior pole shoe 19 and outer utmost point seat 21 and outer pole shoe 31 are set respectively, spreader plate 17 is positioned on the target stand 30 of dividing plate 13 belows, and be fixed in the cooling water channel 8, internal magnet 15, interior utmost point seat 16, interior pole shoe 19, external magnet 20, outer pole shoe 31 and outer utmost point seat 21 are to be top board and to be fixedly installed on the target stand 30 by magnet retaining plate 22 and dividing plate 13 with yoke 12.
Yoke 12, interior utmost point seat 16, outer utmost point seat 21, interior pole shoe 31, outer pole shoe 19 and spreader plate 17 are the magnetically permeable material member; Internal magnet 15 and external magnet 20 are the permanent magnet material member.
Magnetically permeable material adopts ferromagnetic substance or soft magnetic materials, and permanent magnet material adopts permanent-magnet ferrite or rubidium iron boron.
Show as Fig. 1 and Fig. 4: target stand 30 is the good heat conducting material member, cooling water channel 8 is positioned at the upper surface of target stand 30, offer into dividing plate water hole 10 on the dividing plate 13 respectively and go out dividing plate water hole 24, offer into yoke water hole 9 on the yoke 12 respectively and go out yoke water hole 11, water inlet pipe 14 and rising pipe 18 are installed on the yoke 12.Target 27 is to be fixedly installed on the target stand 30 by target press box 26, between target 27 and target stand 30, being positioned at that target stand 30 1 sides are provided with copper backboard 29, are positioned at target 27 1 sides is one deck heat conduction carbon film 28, this structure formation can make thermocontact area reach more than 85%, and target 27 is fully cooled off.Being provided with of cooling water channel can utilize target stand with contacting of internal magnet, external magnet, interior pole shoe and outer pole shoe internal magnet, external magnet, interior pole shoe and outer pole shoe effectively to be implemented cooling.
In concrete the enforcement, cathode 7 connects fixing with bench insulator 6 and shielding case 2 respectively by bolt, insulation sleeve gasket 5, bench insulator 6 is between cathode 7 and shielding case 2, and be fixedly installed on the upper surface of shielding case 2 by the cylinder sunk screw, the upper and lower surface of bench insulator 6 and the upper surface of target stand 30 are respectively arranged with sealing groove, and have sealing-ring to place each sealing groove.
Upper surface at shielding case 2 is provided with protective guard 3, and protective guard 3 is made by insulating material, and the horizontal shielding case 32 that is undertaken on shielding case 2 bottoms is fixedly installed on the bottom end face of shielding case 2 by the cylinder sunk screw.
In concrete the enforcement, adjust the thickness and the permeability of magnetic conductive board 23, can reach the purpose of adjusting cathode 7 outer surface parallel magnetic field intensity distribution.If select thickness for use is 5mm, the magnetically permeable material SS430 that highly is 90mm makes magnetic conductive board 23, the magnetzation curve of SS430 is as shown in table 1, with it by the inner side-wall complete cycle that is arranged on shielding case 2 shown in Figure 1, obtain cathode 7 outer surface parallel magnetic field intensity distribution such as Fig. 5, the maximum parallel magnetic field intensity of cathode 7 outer surfaces is less than 20Gs.The thickness and the permeability that increase magnetic conductive board 23 can further reduce cathode 7 outer surface parallel magnetic field intensity.
Adjust the size of each member in the magnetic circuit mechanism, can reach the purpose of adjusting target material surface parallel magnetic field intensity distribution.Such as, the sectional dimension that internal magnet 15 specifically is set is 15mm * 25mm, the sectional dimension that external magnet 20 is set is 10mm * 25mm, interior pole shoe and outer pole shoe adopt the cross-sectional shape shown in Fig. 1, the sectional dimension of interior pole shoe and outer pole shoe is set to 15mm * 15mm and 10mm * 15mm respectively, the pitch angle is set to 28 ° and 45 ° respectively, and the sectional dimension of two spreader plates 17 all is set to 28mm * 1mm, and the length of target 27 and width are respectively 720mm and 120mm.This concrete coordinating size can be so that the uniform distribution district of target material surface parallel magnetic field intensity reaches 65%, as shown in Figure 6.
Table 1:
| B (T of tesla) | H (peace/rice A/m) |
| 0 | 0 |
| 0.125 | 143 |
| 0.206 | 180 |
| 0.394 | 219 |
| 0.589 | 259 |
| 0.743 | 298 |
| 0.853 | 338 |
| 0.932 | 378 |
| 1.01 | 438 |
| 1.08 | 517 |
| 1.11 | 597 |
| 1.16 | 716 |
| 1.20 | 955 |
| 1.27 | 1590 |
| 1.37 | 3980 |
| 1.43 | 6370 |
| 1.49 | 11900 |
| 1.55 | 23900 |
| 1.59 | 39800 |
Claims (8)
1. rectangle plane magnetron sputtering cathode, have target (27), cathode assembly and be arranged on the shielding case (2) of cathode assembly periphery, in the described cathode assembly, magnetic circuit mechanism is fixedly installed on the inside that cathode (7) were gone up and be positioned to target stand (30), and target (27) is fixedly installed on the bottom of target stand (30); It is characterized in that at described cathode assembly periphery, be positioned at the inboard or the outside of shielding case (2), complete cycle is provided with magnetic conductive board (23).
2. rectangle plane magnetron sputtering cathode according to claim 1 is characterized in that described magnetic conductive board (23) is fixedly installed on the outer side wall of cathode (7), or at the inner side-wall of shielding case (2), or on the outer side wall of shielding case (2).
3. rectangle plane magnetron sputtering cathode according to claim 1 is characterized in that described magnetic conductive board (23) adopts the ferromagnetic substance or the soft magnetic materials of magnetic conduction to make.
4. rectangle plane magnetron sputtering cathode according to claim 1, it is characterized in that being set to of described magnetic circuit mechanism: internal magnet (15) and external magnet (20) are separately positioned on the centre of dividing plate (13) and on every side, corresponding to internal magnet (15) and external magnet (20) interior utmost point seat (16) and interior pole shoe (19) and outer utmost point seat (21) and outer pole shoe (31) are set respectively, spreader plate (17) is positioned on the target stand (30) of dividing plate (13) below, internal magnet (15), interior utmost point seat (16), interior pole shoe (19), external magnet (20), outer pole shoe (31) and outer utmost point seat (21) are top board with yoke (12) and are fixedly installed on the target stand (30) by magnet retaining plate (22) and dividing plate (13).
5. rectangle plane magnetron sputtering cathode according to claim 4 is characterized in that described yoke (12), interior utmost point seat (16), outer utmost point seat (21), interior pole shoe (31), outer pole shoe (19) and spreader plate (17) are the magnetically permeable material member; Described internal magnet (15) and external magnet (20) are the permanent magnet material member.
6. rectangle plane magnetron sputtering cathode according to claim 5 is characterized in that described magnetically permeable material is ferromagnetic substance or soft magnetic materials; Described permanent magnet material is permanent-magnet ferrite or rubidium iron boron.
7. rectangle plane magnetron sputtering cathode according to claim 5, it is characterized in that described target stand (30) is the good heat conducting material member, upper surface at target stand (30) is provided with cooling water channel 8, described spreader plate (17) is arranged in cooling water channel (8), and water inlet pipe (14) and rising pipe (18) are separately positioned on the yoke (12).
8. rectangle plane magnetron sputtering cathode according to claim 7, it is characterized in that described target (27) is fixedly installed on the target stand (30) by target press box (26), between described target (27) and target stand (30), being positioned at that target stand (30) one sides are provided with copper backboard (29), are positioned at target (27) one sides is one deck heat conduction carbon film (28).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100201397A CN101250687A (en) | 2008-03-26 | 2008-03-26 | Rectangle plane magnetron sputtering cathode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100201397A CN101250687A (en) | 2008-03-26 | 2008-03-26 | Rectangle plane magnetron sputtering cathode |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN102925867A (en) * | 2011-08-10 | 2013-02-13 | 三星显示有限公司 | Sputtering apparatus |
| CN103602953A (en) * | 2013-08-27 | 2014-02-26 | 中国建材国际工程集团有限公司 | Rectangle plane magnetron sputtering cathode |
| CN103602952A (en) * | 2013-11-13 | 2014-02-26 | 上海华力微电子有限公司 | Vacuum sputtering device |
| CN103649365A (en) * | 2011-06-30 | 2014-03-19 | 佳能安内华股份有限公司 | Sputtering device |
| CN103820759A (en) * | 2013-08-27 | 2014-05-28 | 中国建材国际工程集团有限公司 | Method for improving utilization rate of rectangular planar magnetron sputtering cathode target material |
| CN109706428A (en) * | 2019-02-25 | 2019-05-03 | 常州星宇车灯股份有限公司 | A kind of sputtering target assembly |
| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| WO2020010722A1 (en) * | 2018-07-11 | 2020-01-16 | 君泰创新（北京）科技有限公司 | Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device |
| CN113463052A (en) * | 2021-07-05 | 2021-10-01 | 华南理工大学 | Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode |
| CN116426893A (en) * | 2023-06-13 | 2023-07-14 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and method |
-
2008
- 2008-03-26 CN CNA2008100201397A patent/CN101250687A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103649365B (en) * | 2011-06-30 | 2016-10-05 | 佳能安内华股份有限公司 | Sputter equipment |
| CN103649365A (en) * | 2011-06-30 | 2014-03-19 | 佳能安内华股份有限公司 | Sputtering device |
| CN102925867A (en) * | 2011-08-10 | 2013-02-13 | 三星显示有限公司 | Sputtering apparatus |
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN103602953A (en) * | 2013-08-27 | 2014-02-26 | 中国建材国际工程集团有限公司 | Rectangle plane magnetron sputtering cathode |
| CN103820759A (en) * | 2013-08-27 | 2014-05-28 | 中国建材国际工程集团有限公司 | Method for improving utilization rate of rectangular planar magnetron sputtering cathode target material |
| CN103602952B (en) * | 2013-11-13 | 2015-11-25 | 上海华力微电子有限公司 | A kind of vacuum sputtering equipment |
| CN103602952A (en) * | 2013-11-13 | 2014-02-26 | 上海华力微电子有限公司 | Vacuum sputtering device |
| WO2020010722A1 (en) * | 2018-07-11 | 2020-01-16 | 君泰创新（北京）科技有限公司 | Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device |
| CN109706428A (en) * | 2019-02-25 | 2019-05-03 | 常州星宇车灯股份有限公司 | A kind of sputtering target assembly |
| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| CN113463052A (en) * | 2021-07-05 | 2021-10-01 | 华南理工大学 | Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode |
| CN113463052B (en) * | 2021-07-05 | 2022-06-21 | 华南理工大学 | Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode |
| CN116426893A (en) * | 2023-06-13 | 2023-07-14 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and method |
| CN116426893B (en) * | 2023-06-13 | 2023-08-18 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and method |
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Open date: 20080827 |