CN103557944A - CNT infrared sensor with low power consumption and high sensitivity - Google Patents
CNT infrared sensor with low power consumption and high sensitivity Download PDFInfo
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- CN103557944A CN103557944A CN201310506884.3A CN201310506884A CN103557944A CN 103557944 A CN103557944 A CN 103557944A CN 201310506884 A CN201310506884 A CN 201310506884A CN 103557944 A CN103557944 A CN 103557944A
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Abstract
The invention relates to a CNT infrared sensor with low power consumption and high sensitivity. The CNT infrared sensor is a microcantilever beam infrared detection sensor based on the combination of CNTs and a standard silicon process. According to the CNT infrared sensor, two spaced suspended microcantilever beams are designed and manufactured according to the standard silicon process. The CNTs are successfully arranged and lapped above the two adjacent microcantilever beams. The shape changes of the microcantilever beams due to reaction to infrared rays drive the soft CNTs to change shapes so as to cause change of the resistance. The CNT infrared sensor has the advantages of being small in size, light in weight, easy to mass-produce, low in cost, low in power consumption, high in sensitivity and the like. Moreover, the CNT infrared sensor can be monolithically integrated with a standard CMOS reading circuit and can be applied to infrared imaging through lots of arrays.
Description
Technical field
The present invention relates to a kind of volume little, lightweight, be easy to volume production, low cost, low-power consumption, highly sensitive carbon nano-tube infrared sensor, can be by a large amount of arrayed applications in infrared imaging.
Background technology
Infrared sensor mainly contains two kinds of structure types: bolometer type and micro-overarm type.The manufacture craft more complicated of the infrared sensor of bolometer type wherein, simultaneously not exclusively compatible with the silicon technology of standard, cause production cost in its volume production higher than micro-overarm type infrared sensor.Common micro-overarm sensor is single suspension beam structure, connects a capacitance detecting assembly below the top of beam.After Infrared irradiation, the deformation that overarm produces changes the electric capacity between beam and substrate, thereby utilizes its capacitance detecting assembly to draw its measurement result.The method has solved the defect aspect bolometer structure is expensive when volume production, but its sensitivity reduces owing to being subject to the restriction of capacitance sensing.
On the other hand, the generation of carbon nano-tube has caused the concern of each research field and it has been studied and performance evaluation, wherein the research of a relevant carbon nano-tube resistance variation characteristic finds that carbon nano-tube is when the deformation that bends, compressional deformation and tensile deformation, and its resistance variations is very obvious.This characteristic is employed in the present invention, as the core of the reaction mechanism of infrared sensor.In addition, carbon nano-tube itself also has certain reaction to infrared light, and its reaction is for along with the enhancing of infrared light, and resistance value reduces, and this is consistent with the effect that its bending is reached, thereby can further increase its reaction sensitivity.Meanwhile, in Nano-technology Development, for the dynamic control of micro-nano object, also there is very large progress.Wherein dielectrophoresis phenomenon is ripe in the application of nanometer technology, is mainly used in the aligning etc. of separation, nano particle of cell.Under the support of this technology, the making of the infrared sensor based on carbon nano-tube proposed by the invention becomes possibility.
Summary of the invention
The technical problem to be solved in the present invention is: provide a kind of based on carbon nano-tube (carbon nano-tube, CNT) the micro-cantilever infrared detection sensor combining with standard silicon technique, this sensor be a kind of volume little, lightweight, be easy to volume production, low cost, low-power consumption, highly sensitive carbon nano-tube infrared sensor.
The technical scheme that the present invention solves the problems of the technologies described above employing is: a kind of low-power consumption high sensitivity carbon nano-tube infrared sensor, by resistance responding layer, micro-overarm upper strata, micro-overarm lower floor, substrate articulamentum, basalis forms, resistance responding layer is overlapped on two micro-slit places of hanging oneself from a beam between lower floor, micro-overarm upper strata be attached to micro-overarm lower floor above, the most of area of micro-overarm lower floor is unsettled, two ends are attached to above substrate articulamentum, substrate articulamentum is on basalis, compare with micro-overarm upper strata, micro-overarm lower floor two ends are slightly long, center section overlaps with micro-overarm upper strata, and form micro-suspension beam structure by substrate articulamentum, part resistance measurement for total as electrode that micro-root of hanging oneself from a beam lower floor is not covered by micro-overarm upper strata, simultaneously, the part that micro-top of hanging oneself from a beam lower floor is not covered by micro-overarm upper strata is as the connecting portion of resistance responding layer.
Further, described resistance responding layer is to be arranged, converged and form by a large amount of carbon nano-tube, under the effect of Van der Waals force, by the distinctive flexibility of carbon nano-tube and conductive characteristic, forms a kind of distinctive flexible resistor film.
Further, described micro-overarm upper strata is made by silicon nitride material, and its thickness needs to optimize, and when Infrared irradiation, not only will guarantee certain energy absorption, also needs to guarantee certain light transmission rate.
Further, described micro-overarm lower floor is made by aluminum, and its thickness needs to optimize, and need to guarantee not only will guarantee certain energy absorption when Infrared irradiation, also needs to guarantee certain safe deformation.
Further, described substrate articulamentum is made by silica material.
Further, described basalis is fabricated from a silicon.
The principle of technical solution of the present invention is:
Infrared sensor based on micro-suspension beam structure, shown in Fig. 1, micro-overarm upper strata 2 is made by the different silicon nitride of thermal expansivity and aluminium foil respectively from micro-overarm lower floor 3.Meanwhile, micro-overarm upper strata 2 requires to guarantee certain light transmission rate during at this device surface when Infrared irradiation.And then make micro-overarm lower floor 3 also because Infrared irradiation absorbs heat generation deformation.With this understanding, due to micro-overarm upper strata 2 and micro-the different of lower floor's 3 thermal expansivity of hanging oneself from a beam, the deformation of micro-overarm generation upward direction.This deformation meeting causes the resistance responding layer 1 that is across micro-overarm upper strata 2 that deformation occurs, and then causes the variation of its resistance.Because resistance responding layer 1 is to be formed by arranging by a large amount of carbon nano-tube, increased its sensitivity.In addition, carbon nano-tube itself also has certain reaction to infrared light, and its reaction is for along with the enhancing of infrared light, and resistance value reduces, and this is consistent with the effect that its bending is reached, thereby has further increased its reaction sensitivity.Shown in Fig. 2, the part that the measurement of carbon nanotube layer resistance is exposed by micro-lower floor's 3 roots of hanging oneself from a beam is measured.
The present invention's advantage is compared with prior art:
1, the present invention is owing to adopting standard semiconductor technique, due to this device can with complementary metal oxide semiconductor (CMOS) (the complementary matal-oxide-semiconductor transistor of standard, therefore CMOS) it is integrated that sensing circuit carries out monolithic, and having can be integrated, low-power consumption, little, the lightweight advantage of volume.
2, simultaneously, the manufacturing technology of carbon nano-tube and dielectrophoresis micro-nano material permutation technology are ripe, by controlling CNT, in the concentration of dilution the inside and time, voltage and the frequency of dielectrophoresis, can control the homogeneity of CNT layer in volume production process, make it there is low cost, high volume production degree.
3, the multiplication effect main, the high reaction capacity by CNT and the arrangement by a large amount of CNTs reach, realizes highly sensitive feature.
Accompanying drawing explanation
Fig. 1 is sectional view of the present invention;
Fig. 2 is vertical view of the present invention;
Fig. 3 is the reaction comparison of multiple carbon nano-tube to infrared light;
Fig. 4 is the microphotograph after carbon nano-tube is arranged;
Before Fig. 5 is micro-overarm deformation presentation graphs (a) deformation, (b) after deformation;
Before Fig. 6 is carbon nano-tube deformation presentation graphs (a) deformation, (b) after deformation;
Fig. 7 is micro-overarm the simulation experiment result;
Fig. 8 is data acquisition process flow diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention.
As shown in Figure 1, 2, for comprising by resistance responding layer 1, micro-overarm upper strata 2, micro-overarm lower floor 3, substrate articulamentum 4, basalis 5, the technology of the present invention solution forms, resistance responding layer 1 is overlapped on two micro-slit places of hanging oneself from a beam between lower floor 3, micro-overarm upper strata 2 be attached to micro-overarm lower floor 3 above, micro-overarm lower floor 3 most of areas are unsettled, two ends are attached to above substrate articulamentum 4, and substrate articulamentum 4 is on basalis 5.Compare with micro-overarm upper strata 2, micro-overarm lower floor 3 two ends are slightly long, and center section overlaps with micro-overarm upper strata 2, and forms micro-suspension beam structure by substrate articulamentum 4.Part resistance measurement for total as electrode that micro-root of hanging oneself from a beam lower floor 3 is not covered by micro-overarm upper strata 2.Meanwhile, the part that micro-top of hanging oneself from a beam lower floor 3 is not covered by micro-overarm upper strata 2 is as the connecting portion of resistance responding layer 1.
The invention described above resistance responding layer 1 used is under the effect of dielectrophoresis, to be aligned, converged and form by a large amount of carbon nano-tube.Micro-overarm upper strata 2 is silicon nitride materials of making by chemical vapour deposition.Micro-overarm lower floor 3 is the aluminium foils that formed by vapor deposition process.Substrate articulamentum 4 is utilize silicon base oxidation and make by etching method.Basalis 5 is to be made by silicon wafer.
First by chemical vapour deposition, on basalis 5, form one deck monox, then utilize vapor deposition process to make aluminium foil and form micro-overarm lower floor 3 by light leak method, then by chemical vapour deposition, make silicon nitride layer and again by light leak method, form micro-overarm upper strata 2.Next step is the preparation of resistance responding layer 1.Before preparation, relatively learn that by experiment single-walled carbon nanotubes is pair the strongest with reacting of infrared light, as Fig. 3, therefore apply in the present invention.By dielectrophoresis phenomenon, utilize the adjusting of voltage and frequency and the adjusting of carbon nano-tube solution concentration by the neat device center that is arranged in of a large amount of carbon nano-tube and ride on the two ends of micro-overarm lower floor 3, as Fig. 4.Finally utilize etching method by substrate articulamentum 4 etchings of the centre top of basalis 5, make micro-overarm lower floor 3 unsettled, thereby form device proposed by the invention.
The present invention is in specific implementation process, and because sensing ability is that change in resistance by carbon nano-tube determines, therefore, micro-overarm upper strata 2 is base values that this device is measured with the bending change amplitude of micro-overarm lower floor 3.And then known, the optimization of the thickness of micro-overarm upper strata 2 and micro-lower floor 3 of hanging oneself from a beam is and is important.Its Optimized Approaches can utilize following formula to realize:
Wherein, t1 is micro-overarm upper strata 2(silicon nitride) thickness, t2 is the micro-overarm 3(of lower floor aluminium foil layer) thickness, λ 1 is the pyroconductivity on micro-overarm upper strata 2, λ 2 is the pyroconductivity of micro-lower floor 3 of hanging oneself from a beam, W is the width of micro-overarm, and K is the specific inductive capacity of micro-lower floor 3 of hanging oneself from a beam, and a1 is the heat-conduction coefficient on micro-overarm upper strata 2, a2 is the heat-conduction coefficient of micro-lower floor 3 of hanging oneself from a beam, P is infrared radiant power, δ be micro-overarm upper strata 2 with micro-overarm lower floor 3 deformation quantities as shown in Figure 5, η is Infrared Absorption Coefficient.Before and after carbon nano-tube deformation, schematic diagram as shown in Figure 6.
By finite element simulation, draw the conclusion as Fig. 7.This conclusion explanation: 1. in the present invention, micro-lower floor 3 of hanging oneself from a beam is used the deformation effect of metallic aluminium (Al) paper tinsels will greatly be better than using gold (Au) paper tinsel and chromium (Cr) paper tinsel; 2. micro-overarm upper strata 2 is about at 0.3 o'clock with micro-overarm lower floor ratio in the present invention, and micro-overarm has largest deformation.Meanwhile, consider the problem of ir transmissivity and reflectivity, through emulation, determine that its design parameter is as shown in table 1.Effective micro-overarm long 120 μ m, wide 5 μ m, micro-overarm upper strata (silicon nitride) thickness 0.7 μ m, the layer thickness 0.2 μ m of micro-overarm lower floor (aluminium foil), effectively length of carbon nanotube 5 μ m.
Table 1
Data acquisition of the present invention as shown in Figure 8, first in the situation that unglazed photograph assurance do not have extraneous thermal distortion to affect, by read and preserve the resistance of the resistance responding layer 1 recording at electrode place input voltage and electric current, and as standard value.Then, device is put under infrared light photograph, and measures the resistance of resistance responding layer 1 now.By this result and initial to result compare and obtain its difference.According to this difference, judge infrared intensity and export by output.Concrete steps are as follows:
Step 1), unglazed according to time, by input voltage and electric current, read and preserve carbon nanotube layer resistance as standard value;
By at electrode place (on substrate articulamentum 4, micro-overarm lower floor 3 has more the part on micro-overarm upper strata 2) input voltage and electric current read and preserve the resistance of measured resistance responding layer 1, and as standard value ref.
Step 2), device is exposed under infrared light photograph;
Step 3), measure carbon nanotube layer now resistance and with standard comparison, preservation;
Step 4), determine and standard value between difference;
Concrete, step 2) device of the present invention is put under infrared light photograph to be measured, and in step 3), measure the resistance of resistance responding layer 1 now, and as measured value.This result and the result obtaining are at first compared and obtain its difference DELTA a.
Step 5), according to difference, judge infrared light intensity;
Step 6), result represent at output terminal
Concrete, step 5) is utilized formula R=ref+ Δ a * S according to this difference DELTA a
pjudge infrared intensity and by output and display module, export (R is end value) in step 6).
The not detailed disclosed part of the present invention belongs to the known technology of this area.
Although above the illustrative embodiment of the present invention is described; so that the technician of present technique neck understands the present invention; but should be clear; the invention is not restricted to the scope of embodiment; to those skilled in the art; as long as various variations appended claim limit and definite the spirit and scope of the present invention in, these variations are apparent, all utilize innovation and creation that the present invention conceives all at the row of protection.
Claims (6)
1. the highly sensitive carbon nano-tube infrared sensor of low-power consumption, it is characterized in that: by resistance responding layer (1), micro-overarm upper strata (2), micro-overarm lower floor (3), substrate articulamentum (4), basalis (5) forms, resistance responding layer (1) is overlapped on the slit place between two micro-overarm lower floors (3), micro-overarm upper strata (2) be attached to micro-overarm lower floor (3) above, the most of area of micro-overarm lower floor (3) is unsettled, two ends are attached to substrate articulamentum (4) above, substrate articulamentum (4) is on basalis (5), compare with micro-overarm upper strata (2), micro-overarm lower floor (3) two ends are slightly long, center section overlaps with micro-overarm upper strata (2), and form micro-suspension beam structure by substrate articulamentum (4), the part that the root of micro-overarm lower floor (3) is not covered by micro-overarm upper strata (2) is as electrode, resistance measurement for total, simultaneously, the part that the top of micro-overarm lower floor (3) is not covered by micro-overarm upper strata (2) is as the connecting portion of resistance responding layer (1).
2. the highly sensitive carbon nano-tube infrared sensor of low-power consumption according to claim 1, it is characterized in that: described resistance responding layer (1) is to be arranged, converged and form by a large amount of carbon nano-tube, under the effect of Van der Waals force, by the distinctive flexibility of carbon nano-tube and conductive characteristic, form a kind of distinctive flexible resistor film.
3. the highly sensitive carbon nano-tube infrared sensor of low-power consumption according to claim 1, it is characterized in that: described micro-overarm upper strata (2) is made by silicon nitride material, and its thickness needs to optimize, when Infrared irradiation, not only to guarantee certain energy absorption, also need to guarantee certain light transmission rate.
4. the highly sensitive carbon nano-tube infrared sensor of low-power consumption according to claim 1, it is characterized in that: described micro-overarm lower floor (3) is made by aluminum, and its thickness needs to optimize, need to guarantee not only will guarantee certain energy absorption when Infrared irradiation, also need to guarantee certain safe deformation.
5. the highly sensitive carbon nano-tube infrared sensor of low-power consumption according to claim 1, is characterized in that: described substrate articulamentum (4) is made by silica material.
6. the highly sensitive carbon nano-tube infrared sensor of low-power consumption according to claim 1, is characterized in that: described basalis (5) is fabricated from a silicon.
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| CN104359561A (en) * | 2014-11-21 | 2015-02-18 | 电子科技大学 | Carbon-nano-tube-array-based flexible infrared sensor and manufacturing method thereof |
| CN104724661A (en) * | 2015-03-18 | 2015-06-24 | 上海交通大学 | Three-dimensional multi-layer micronano double-material micro-beam composite structure and application thereof |
| CN104843628A (en) * | 2015-05-06 | 2015-08-19 | 东南大学 | A silicon cantilever beam structure and manufacturing method thereof |
| CN104891424A (en) * | 2015-05-28 | 2015-09-09 | 东北大学 | New parallel electric field type photoelectric chip capable of chaining carbon nano tubes |
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Cited By (8)
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| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Single-walled carbon nanotube based double-cantilever-beam infrared detector and forming method thereof |
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| CN104359561B (en) * | 2014-11-21 | 2017-10-17 | 电子科技大学 | A kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof |
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| CN104843628A (en) * | 2015-05-06 | 2015-08-19 | 东南大学 | A silicon cantilever beam structure and manufacturing method thereof |
| CN104891424A (en) * | 2015-05-28 | 2015-09-09 | 东北大学 | New parallel electric field type photoelectric chip capable of chaining carbon nano tubes |
| CN104891424B (en) * | 2015-05-28 | 2016-08-17 | 东北大学 | A kind of novel parallel Electric field photoelectric chip ordering about CNT chaining |
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