CN104891424A - New parallel electric field type photoelectric chip capable of chaining carbon nano tubes - Google Patents
New parallel electric field type photoelectric chip capable of chaining carbon nano tubes Download PDFInfo
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- CN104891424A CN104891424A CN201510280836.6A CN201510280836A CN104891424A CN 104891424 A CN104891424 A CN 104891424A CN 201510280836 A CN201510280836 A CN 201510280836A CN 104891424 A CN104891424 A CN 104891424A
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Abstract
The invention presents a new parallel electric field type photoelectric chip capable of chaining carbon nano tubes. Because the direction of an electric field generated by the parallel electric field type photoelectric chip is in parallel with the surface of a substrate, and the photoconductive film on the surface of the substrate is made of hydrogenated amorphous silicon, a virtual electrode is formed to generate a local non-uniform field after programmable light spots directly irradiate optoelectronic films separated by two spaces there-under, and the carbon nano tubes suspended in a chip microgroove are moved by the force of light-induced dielectrophoresis. By manually adjusting size, shape and position of the light spots, the new parallel electric field type photoelectric chip capable of chaining carbon nano tubes of the invention could realize the chaining of the carbon nano tubes, which are absorbed with each other via the force of the light-induced dielectrophoresis. The parallel electric field type photoelectric chip capable of controlling the carbon nano tube to chain has potential practical value and significance for making micro sensors and micro-processing electron devices.
Description
Technical field
The present invention is a kind of parallel electric field formula photoelectric chip of novel structure, relies on light-induction dielectrophoresis power to order about CNT chaining, belongs to microelectronics, micro-nano control field.
Background technology
Now, micro-/ nano technology is flourish impels front line science exploration constantly to make new breakthroughs.CNT has very high mechanical strength, electrical conductivity and thermal conductivity and is used to electronics, chemical sensor and biomedical device.The CNT chain of directed tufted can make macromolecule membrane and composite.Make field at microelectronic component, the fabrication design of the novel microelectronic material that CNT leads also needs micro-active force to assist their movement of control and be connected.Therefore the experiment of Artificial Control microcosmic particle all be unable to do without the exploration of micro-active force.But the multiple micro-active force under minute yardstick has been proposed by lot of documents and tested use, effective and surely belonged to dielectrophoretic force (Monti by micro-active force that great many of experiments confirms, M., Natali, M., Torre, L., and Kenny, J.M.: ' The alignment of single walled carbon nanotubes in an epoxy resin by applying a DC electric field ', Carbon, 2012,50, pp. 2453-2464).
In early days, the generation of dielectrophoretic force mainly relies on metal electrode.Development with photovoltaic solar cell and light-sensitive material is again that micro-/nano chip injects new vitality.People also been proposed photoelectric chip (Chiou on this basis, P.Y., Ohta, A.T., and Wu, M.C.: ' Massively parallel manipulation of single cells and microparticles using optical images ', Nature, 2005,436, pp. 370-372).Photoelectric chip utilizes photo-conductive film, under spatial light is irradiated, can form dummy electrodes on optoelectronic film surface.Dummy electrodes is the same with traditional metal electrodes can produce dielectrophoretic force meet particulate collection, transport and be separated.The structure of photoelectric chip is all easy and cheap than metal electrode from manufacture craft and cost.Therefore, the present invention's a kind of parallel electric field formula of the proposition of novelty photoelectric chip again on the basis of Traditional photovoltaic chip.Parallel electric field formula photoelectric chip and Ohta, A.T. (Ohta, A.T., Chiou, P.-Y., Phan, H.L., Sherwood, S.W., Yang, J.M., Lau, A.N.K., Hsu, H.-Y., Jamshidi, A., and Wu, M.C.: ' Optically controlled cell discrimination and trapping using optoelectronic tweezers ', IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13, pp. 235-243) the excitation electrical field direction of formula photoelectric chip of single end that proposes is similar, but the present invention is different from it with means according to the object of CNT chaining, preparation method and use principle also there is larger difference.The able to programme hot spot how different by parallel electric field formula photoelectric chip combining form can make CNT chaining, can meet the making demand based on carbon nano tube sensor and tuned laser thus.
Summary of the invention
(1) technical problem that will solve
In order to realize CNT chaining, need the manufacture solving parallel electric field formula photoelectric chip.The making of parallel electric field formula photoelectric chip and the preparation method difference to some extent of common photoelectric chip.Common photoelectric chip primary structure is sandwich structure, and top layer indium oxide tin glass is connected bias voltage jointly with liner oxidation indium tin glass.When induction hot spot be irradiated to lower surface have hydrogenation non crystal silicon film indium oxide tin glass plating after, photo-generated carrier can make amorphous silicon hydride electrical conductivity sharply increase, and then makes to have enough powerful electric field in photoelectric chip.But for parallel electric field formula photoelectric chip, the applying of its driving voltage relies on liner oxidation indium tin glass completely.By induction hot spot, two pieces of parallel hydrogenation non crystal silicon films with certain distance are conducted, form non-homogeneous parallel electric field with this.By regulating external voltage and frequency, and spot size, shape, position realize the chaining of CNT.
(2) technical scheme
The present invention is a kind of novel parallel Electric field photoelectric chip ordering about CNT chaining.The substrate base selective oxidation indium tin glass of photoelectric chip, chip internal can load certain density CNT.CNT chaining is realized by the light-induction dielectrophoresis power applying driving voltage and hot spot generation.
In such scheme, described substrate base adopts indium oxide tin glass, and its length and width are 5 cm × 2.5 cm, and indium oxide tin glass has good printing opacity and conductive characteristic is used by a large amount of photocell.Strengthen chemical vapor infiltration at indium oxide tin glass surface using plasma and plate hydrogenated amorphous silicon material, its thickness, greatly about about 1 μm, makes liner oxidation indium tin glass possess light sensitive characteristic.
In such scheme, be coated with the indium oxide tin glass surface coating photoresist of amorphous silicon hydride.Projection exposure 7 μm is width of mini longitudinal channels, and this microflute is mainly used in loading carbon nanotube particulate, and the photoresist of exposure place is removed in development.
In such scheme, use reactive ion etching method to remove the hydrogenated amorphous silicon layer losing photoresist protection, make plane hydrogenated amorphous silicon layer be separated thus, and spacing is two pieces of sub-films of amorphous silicon hydride of 7 μm.For the core of parallel electric field formula photoelectric chip, two pieces of amorphous silicon hydrides of separation are as the base plane of dummy electrodes in light-induction dielectrophoresis power.
In such scheme, adopt wet chemical on original 7 μm of wide microflutes, continues dark microflute at rotten quarter 6 μm.Corrosion adopts alkaline solution, because alkaline solution has good anisotropy for siliceous ground glass.It is thick that the tin indium oxide of rotary coating is only 100 nm, therefore can remove very easily.
In such scheme, the left and right surfaces that described parallel electric field formula photoelectric chip is being separated adopts optical exposure and reactive ion etching to corrode the amorphous silicon hydride of certain area, in order to connecting electrode for chip provides bias voltage again.Compared with common photoelectric chip, although the on-link mode (OLM) of driving voltage is without the need to top surface of the glass, in order to prevent micro-liquid from evaporating, and CNT is not by dust pollution, and then also needs to continue to introduce top surface of the glass.Only need at substrate vitreous coating glass cement, or non-conductive double faced adhesive tape is as support, can encapsulate top surface of the glass.
In such scheme, light source adopts commercial projection device, is sent hot spot and is radiated at the left and right amorphous silicon hydride photosurface of photoelectric chip through optical focusing lens.Period, photoelectric chip was positioned on microscope, and the size and shape of observation and adjustment induction hot spot, to produce a certain size space electric field.Electric field in parallel electric field formula photoelectric chip produces light-induction dielectrophoresis power and orders about CNT and to attract each other chaining.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1) a kind of parallel electric field formula photoelectric chip of the present invention's design, after being irradiated to left and right two pieces of tools hydrogenated amorphous silicon face at regular intervals, makes the conducting of photoelectric chip internal electric field by space hot spot.The light-induction dielectrophoresis power that the electric field of conducting provides can force CNT formation rule long-chain.
2) chain of CNT controls, also by regulating the light spot shape on both sides.Compare traditional metal electrodes, the shape of hot spot has flexibility, its planar, pectination, and the dummy electrodes of triangular shape can be used in carbon nano tube sensor making.
Accompanying drawing explanation
Following figure is that the structure chart of parallel electric field formula photoelectric chip is identical with detailed description of the invention process.
Fig. 1 is structure and the operation instruction schematic diagram of parallel electric field formula photoelectric chip, and wherein (a) is for parallel electric field formula photoelectric chip is to the schematic three dimensional views of CNT chaining, and (b) is the schematic cross-section of parallel electric field formula photoelectric chip.
Fig. 2 is based on the distribution diagram of monte carlo method simulation CNT under the effect of light-induction dielectrophoresis power, wherein (a) initial random distribution that is CNT, b CNT chaining distribution that () is formed for rectangular light spot array, the CNT chaining distribution that (c) is formed for triangle spot array.
In Fig. 1: 1, indium oxide tin glass substrate, 2, amorphous silicon hydride, 3, double faced adhesive tape, 4, signal generator, 5, light source, 6, the micro-full mirror of numeral, 7, CNT.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, concrete structure of the present invention is described in further detail.
One, the substrate of parallel electric field formula photoelectric chip selects indium oxide tin glass, and indium oxide tin glass has good light transmission and electric conductivity, and its length and width are roughly 5 cm × 2.5 cm, as shown in Fig. 11.
Two, on liner oxidation indium tin glass, using plasma strengthens chemical vapor infiltration and plates hydrogenation non crystal silicon film, and film thickness is about about 1 μm, makes indium oxide tin glass possess photosensitive feature thus.
Rotary coating photoresist on the indium oxide tin glass of three, hydrogenation non crystal silicon film.And then optical exposure, development and reactive ion etching intermediate substrate glass can be adopted, smooth amorphous silicon hydride is divided equally.7 μm wide are kept between left and right two pieces of hydrogenation non crystal silicon films be separated.Then, adopt wet chemicals to continue etching 5 μm of microflutes at 7 μm of microchanneled surfaces, ensure microflute total depth be 6 μm for loading CNT particle
Four, in order to add electrical signals on the left and right indium oxide tin glass surface being coated with amorphous silicon hydride, also avoid photoelectric chip solution evaporation and pollution simultaneously.On this basis, again reactive ion etching is carried out to connect copper cash to the edge of liner oxidation indium tin glass, enable access signal of telecommunication generating means.100 μm of thickness can be added in surface, and the wide double faced adhesive tape of 0.5 mm is as the supporter of top layer glass.The complete top layer glass of capping, so far completes the making of parallel electric field formula photoelectric chip.The complete sectional view illustrating parallel electric field formula photoelectric chip of Fig. 1 (b).
Five, the using method of parallel electric field formula photoelectric chip is made now describe in detail.First, the input of signal generator, output electrode are connected to respectively the left and right position of parallel electric field formula photoelectric chip, as shown in Fig. 1 (b).Then, adopt optical projector as light source 5 output equipment.Produce macroscopic hot spot and be reduced to 10 ~ 100 μm of micro-meter scales through the micro-full mirror 6 of numeral, the top-down vertical irradiation of this hot spot is to the left and right indium oxide tin glass surface of precipitation, tangent with amorphous silicon hydride microflute border.There is photo-generated carrier in the amorphous silicon hydride position relying on hot spot to be irradiated to, forces this region amorphous silicon hydride electrical conductivity sharply to increase, to such an extent as to this position electric field conducting.Electric field in photoelectric chip can produce light-induction dielectrophoresis power, finally realizes the arrangement chaining of CNT.
Claims (3)
1. order about a novel parallel Electric field photoelectric chip for CNT chaining, be made up of indium oxide tin glass substrate, hydrogenation non crystal silicon film, microflute and pair of electrodes, it is characterized in that: hydrogenation non crystal silicon film is plated in types of flexure; Microflute is made in the substrate centre position of amorphous silicon hydride; An electrode is respectively drawn at the two ends, left and right of amorphous silicon hydride.
2. a kind of novel parallel Electric field photoelectric chip ordering about CNT chaining as claimed in claim 1, it is characterized in that: hydrogenation non crystal silicon film adopts the Plasma Enhanced Chemical Vapor precipitation method to be plated on indium oxide tin glass substrate surface, and its thickness is 1 μm.
3. a kind of novel parallel Electric field photoelectric chip ordering about CNT chaining as claimed in claim 1, is characterized in that: in the middle of hydrogenation non crystal silicon film, adopt reactive ion etching method to produce the microflute of 7 μm wide, expose indium oxide tin glass surface; Adopt selective wet chemical etching further at the microchanneled surface of 7 μm wide, make microflute total depth reach 6 μm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107615041A (en) * | 2015-10-07 | 2018-01-19 | Afi技术公司 | Check device, inspection system and inspection method |
Citations (6)
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| CN1715181A (en) * | 2004-06-30 | 2006-01-04 | 北京大学 | Method for controlling carbon nano tube oriented arranging, distribution and density |
| JP2010240794A (en) * | 2009-04-08 | 2010-10-28 | Panasonic Corp | Carbon nanotube arrangement method |
| CN101893592A (en) * | 2010-06-24 | 2010-11-24 | 浙江大学 | Method for preparing carbon nano-tube gas-sensitive sensors |
| CN103557944A (en) * | 2013-10-24 | 2014-02-05 | 北京航空航天大学 | CNT infrared sensor with low power consumption and high sensitivity |
| CN104371917A (en) * | 2014-09-16 | 2015-02-25 | 东北大学 | New method for inducing chain forming of cells based on double-photoelectrical film biochip |
| US20150108429A1 (en) * | 2013-10-22 | 2015-04-23 | Harsha Sudarsan Uppili | Carbon nanotube printed electronics devices |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1715181A (en) * | 2004-06-30 | 2006-01-04 | 北京大学 | Method for controlling carbon nano tube oriented arranging, distribution and density |
| JP2010240794A (en) * | 2009-04-08 | 2010-10-28 | Panasonic Corp | Carbon nanotube arrangement method |
| CN101893592A (en) * | 2010-06-24 | 2010-11-24 | 浙江大学 | Method for preparing carbon nano-tube gas-sensitive sensors |
| US20150108429A1 (en) * | 2013-10-22 | 2015-04-23 | Harsha Sudarsan Uppili | Carbon nanotube printed electronics devices |
| CN103557944A (en) * | 2013-10-24 | 2014-02-05 | 北京航空航天大学 | CNT infrared sensor with low power consumption and high sensitivity |
| CN104371917A (en) * | 2014-09-16 | 2015-02-25 | 东北大学 | New method for inducing chain forming of cells based on double-photoelectrical film biochip |
Non-Patent Citations (1)
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| KUNITOSHI YAMAMOTO ET AL.: ""Orientation of Carbon Nanotubes Using Electrophoresis"", 《JPN.J.APPL.PHYS》, vol. 35, 15 July 1996 (1996-07-15) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107615041A (en) * | 2015-10-07 | 2018-01-19 | Afi技术公司 | Check device, inspection system and inspection method |
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Granted publication date: 20160817 |