CN104359561A - Carbon-nano-tube-array-based flexible infrared sensor and manufacturing method thereof - Google Patents
Carbon-nano-tube-array-based flexible infrared sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN104359561A CN104359561A CN201410674373.7A CN201410674373A CN104359561A CN 104359561 A CN104359561 A CN 104359561A CN 201410674373 A CN201410674373 A CN 201410674373A CN 104359561 A CN104359561 A CN 104359561A
- Authority
- CN
- China
- Prior art keywords
- type carbon
- carbon nano
- array
- nano pipe
- pipe array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention provides a carbon-nano-tube-array-based flexible infrared sensor and a manufacturing method of the carbon-nano-tube-array-based flexible infrared sensor, and belongs to the field of flexible infrared sensor manufacturing. The carbon-nano-tube-array-based flexible infrared sensor comprises a substrate and an infrared sensitive material located on the substrate. The infrared sensitive material is a P-N joint formed by a P-type carbon nano tube array and an N-type carbon nano tube array, and electrodes are arranged on the P-type carbon nano tube array and the N-type carbon nano tube array respectively. According to the carbon-nano-tube-array-based flexible infrared sensor and the manufacturing method, the P-N joint formed by the P-type carbon nano tube array and the N-type carbon nano tube array is adopted for the flexible infrared sensor to serve as the infrared sensitive material, when a device is irradiated by the infrared light, infrared response can be represented by testing the P-N joint open-circuit voltage, the power consumption is lowered, no voltage source meter or current source meter needs to be used, and the flexible infrared sensor is convenient to use and capable of being bent repeatedly without affecting the performance of the device and has good stability.
Description
Technical field
The invention belongs to carbon nanomaterial synthesis and flexible infrared sensor preparation field, be specifically related to a kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof.
Background technology
Infrared sensor has now been widely used in the fields such as Woundless blood sugar monitoring, rhythm of the heart, Intelligent housing and infrared imaging.At present, along with more and more wearable or can the widely using of winding apparatus, the demand for flexible sensor be more and more urgent, the research of flexible sensor is also more and more subject to the attention of researcher.Compared with traditional infrared sensor, flexible infrared sensor not only needs infrared-sensitive material to have good infrared response, the more important thing is that the material needing to be applied to flexible infrared sensor still keeps good performance under bending state.
Carbon nano-tube is that (radial dimension is nanometer scale to a kind of special construction, axial dimension is micron dimension, pipe two ends are substantially all sealed) One-dimensional Quantum material, there is excellent mechanics, electricity, chemistry and mechanical property, the advantage such as lightweight, have been a great deal of attention.In recent years, along with deepening continuously of carbon nano-tube and nano materials research, its wide application prospect constantly displays.Because the characteristic electron of carbon nano-tube is mainly by the structures shape of its atomic arrangement, so the change of its stressed change or chemisorption all can have an impact to conductivity, its changing value can be detected by current signal, and these character make carbon nano-tube can be used as sensor.Change diameter and the dopant states of carbon nano-tube simultaneously, its band gap can be regulated to change in hundreds of meV several, and the energy range of infrared light (1 ~ 15 μm) wave band is 1.24eV ~ 83meV, close with the energy gap of carbon nano-tube, therefore in theory, carbon nano-tube can be used as infrared sensor.At present, existing carbon nano-tube or the carbon nano tube compound material of adopting prepares infrared sensor as sensitive material, but, because this sensor is the change by test carbon nano-tube resistance under infrared radiation, therefore need could measure at carbon nano-tube two ends impressed voltage or current source.
Summary of the invention
The present invention is directed to the defect that background technology exists, propose a kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof.This flexible infrared sensor adopts the P-N junction of P type carbon nano pipe array and n type carbon nanotube array composition as infrared-sensitive material, when device is subject to Infrared irradiation, infrared response is characterized by test P-N junction open-circuit voltage, reduce power consumption, without the need to using voltage or current source table, easy to use, and this flexible sensor can repeated flex and do not affect the performance of device, has good stability.
Technical scheme of the present invention is as follows:
A kind of flexible infrared sensor based on carbon nano pipe array, comprise substrate and the infrared-sensitive material being positioned at substrate, described infrared-sensitive material is the P-N junction that P type carbon nano pipe array and n type carbon nanotube array are formed, and described P type carbon nano pipe array and n type carbon nanotube array are provided with electrode.
Further, described substrate is polymethylmethacrylate (PMMA), and the electrode that described P type carbon nano pipe array and n type carbon nanotube array are arranged is silver electrode, is obtained by conductive silver paste solidification.
The preparation method of the above-mentioned flexible infrared sensor based on carbon nano pipe array, comprises the following steps:
Step 1: preparation mass concentration is the methyl phenyl ethers anisole solution of the polymethylmethacrylate of 0.08g/mL;
Step 2: adopt floating catalytic chemical vapour deposition technique to prepare P type carbon nano pipe array and n type carbon nanotube array respectively;
Step 3: the methyl phenyl ethers anisole solution substrate of the band P type carbon nano pipe array obtained in step 2 dripping the polymethylmethacrylate that step 1 is prepared to whole covering substrate only, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, obtain the polymethylmethacrylate being with P type carbon nano pipe array, then seamless to ensure between P type carbon nano pipe array and n type carbon nanotube array on the substrate polymethylmethacrylate of band P type carbon nano pipe array being fitted tightly the band n type carbon nanotube array obtained in step 2, the methyl phenyl ethers anisole solution dripping the polymethylmethacrylate that step 1 is prepared stops to whole covering substrate, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, namely on polymethylmethacrylate, obtain stacked P type carbon nano pipe array and n type carbon nanotube array,
Step 4: the P type carbon nano pipe array obtained in step 3 and n type carbon nanotube array prepare electrode.
Further, described in step 3 by drip have the methyl phenyl ethers anisole solution of polymethylmethacrylate to dry time temperature be 150 DEG C, drying time is 20min; The electrode prepared on P type carbon nano pipe array and n type carbon nanotube array described in step 4 is silver electrode, is obtained by conductive silver paste solidification.
The preparation method of the above-mentioned flexible infrared sensor based on carbon nano pipe array, comprises the following steps:
Step 1: preparation mass concentration is the methyl phenyl ethers anisole solution of the polymethylmethacrylate of 0.08g/mL;
Step 2: adopt floating catalytic chemical vapour deposition technique to prepare P type carbon nano pipe array and n type carbon nanotube array respectively;
Step 3: the methyl phenyl ethers anisole solution substrate of the band n type carbon nanotube array obtained in step 2 dripping the polymethylmethacrylate that step 1 is prepared to whole covering substrate only, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, obtain the polymethylmethacrylate being with n type carbon nanotube array, then seamless to ensure between n type carbon nanotube array and P type carbon nano pipe array on the substrate polymethylmethacrylate of band n type carbon nanotube array being fitted tightly the band P type carbon nano pipe array obtained in step 2, the methyl phenyl ethers anisole solution dripping the polymethylmethacrylate that step 1 is prepared stops to whole covering substrate, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, namely on polymethylmethacrylate, obtain stacked n type carbon nanotube array and P type carbon nano pipe array,
Step 4: the n type carbon nanotube array obtained in step 3 and P type carbon nano pipe array prepare electrode.
Further, described in step 3 by drip have the methyl phenyl ethers anisole solution of polymethylmethacrylate to dry time temperature be 150 DEG C, drying time is 20min; The electrode prepared on n type carbon nanotube array and P type carbon nano pipe array described in step 4 is silver electrode, is obtained by conductive silver paste solidification.
Further, the preparation process of the type of P described in step 2 carbon nano pipe array is: take ferrocene as solute, and toluene is solvent, and preparation massfraction is that the toluene solution of the ferrocene of 3% is as precursor liquid; Silicon dioxide substrates is placed in tubular furnace, under an argon atmosphere by heating temperatures in tubular furnace to 850 DEG C, then the precursor liquid of above-mentioned preparation is injected with the speed of 10mL/h, at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of argon gas and hydrogen, carbon nano-tube is grown in silicon dioxide substrates; After thermal treatment terminates, naturally cool to room temperature with stove under an argon atmosphere, in silicon dioxide substrates, namely obtain P type carbon nano pipe array.
Further, in the mixed gas of above-mentioned argon gas and hydrogen, the percent by volume of argon gas is 94%, and the percent by volume of hydrogen is 6%.
Further, the preparation process of the array of n type carbon nanotube described in step 2 is: take ferrocene as solute, and acetonitrile and alcohol mixed solution are solvent, preparation massfraction be the ferrocene solution of 2% as precursor liquid, wherein the mass ratio of acetonitrile and ethanol is 16:1; Silicon dioxide substrates is placed in tubular furnace, under an argon atmosphere by heating temperatures in tubular furnace to 850 DEG C, then the precursor liquid of above-mentioned preparation is injected with the speed of 8mL/h, at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of argon gas and hydrogen, carbon nano-tube is grown in silicon dioxide substrates; After thermal treatment terminates, naturally cool to room temperature with stove under an argon atmosphere, namely in silicon dioxide substrates, obtain n type carbon nanotube array.
Further, in the mixed gas of above-mentioned argon gas and hydrogen, the percent by volume of argon gas is 94%, and the percent by volume of hydrogen is 6%.
Beneficial effect of the present invention is:
1, the sensitive material of flexible infrared sensor provided by the invention is the P-N junction of P type carbon nano pipe array and n type carbon nanotube array composition, N is had to point to the built in field of P between P-N junction, when this flexible infrared sensor is subject to infrared radiation, the unnecessary charge carrier produced can be moved under the effect of built in field, wherein electron stream is to N side, hole flows to P side, thus there occurs the change of phase boundary potential on P-N junction surface, outside then voltage detected by the silver electrode on P type carbon nano pipe array and n type carbon nanotube array.
2, flexible infrared sensor power consumption provided by the invention is extremely low, does not need voltage or current source table, convenient application; The infrared-sensitive material carbon nano-pipe array adopted is listed in when substrate bends and can not damages, and makes sensor can repeated flex and do not affect the performance of device, has good stability; Flexible infrared sensor preparation cost provided by the invention is low, technique simple, is applicable to carry out commercial production.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flexible infrared sensor based on carbon nano pipe array that the embodiment of the present invention obtains.
Fig. 2 is the scanning electron microscope diagram (SEM) of the carbon nano pipe array that the embodiment of the present invention prepares.Wherein, (a) is the scanning electron microscope (SEM) photograph of P type carbon nano pipe array, and (b) is the scanning electron microscope (SEM) photograph of n type carbon nanotube array.
Fig. 3 is the x-ray photoelectron energy spectrogram (XPS) of the n type carbon nanotube array that the embodiment of the present invention obtains.
Fig. 4 is the response curve of the flexible infrared sensor based on carbon nano pipe array when 850nm wavelength that the embodiment of the present invention obtains.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described further.
A kind of flexible infrared sensor based on carbon nano pipe array, comprise substrate and the infrared-sensitive material being positioned at substrate, described infrared-sensitive material is the P-N junction that P type carbon nano pipe array and n type carbon nanotube array are formed, and described P type carbon nano pipe array and n type carbon nanotube array are provided with electrode.
Further, described substrate is flexible polymethylmethacrylate (PMMA), and the electrode that described P type carbon nano pipe array and n type carbon nanotube array are arranged is silver electrode, is obtained by conductive silver paste solidification.
Flexible infrared sensor based on carbon nano pipe array provided by the invention, be followed successively by polymethylmethacrylate substrate, P type carbon nano pipe array and n type carbon nanotube array from the bottom up, described P type carbon nano pipe array and n type carbon nanotube array are provided with silver electrode.
Present invention also offers a kind of flexible infrared sensor based on carbon nano pipe array, be followed successively by polymethylmethacrylate substrate, n type carbon nanotube array and P type carbon nano pipe array from the bottom up, described P type carbon nano pipe array and n type carbon nanotube array are provided with silver electrode.
Provided by the inventionly define P-N junction based on P type carbon nano pipe array and n type carbon nanotube array in the flexible infrared sensor of carbon nano pipe array, N is had to point to the built in field of P between P-N junction, when this flexible infrared sensor is subject to Infrared irradiation, the unnecessary charge carrier produced can be moved under the effect of built in field, wherein electron stream is to N side, hole flows to P side, thus there occurs the change of phase boundary potential on P-N junction surface, outside then voltage detected by the silver electrode on P type carbon nano pipe array and n type carbon nanotube array.
Embodiment
Present invention also offers a kind of preparation method of the flexible infrared sensor based on carbon nano pipe array, comprise the following steps:
Step 1: with polymethylmethacrylate (PMMA) for solute, methyl phenyl ethers anisole is solvent, and preparation mass concentration is the methyl phenyl ethers anisole solution of the polymethylmethacrylate of 0.08g/mL;
Step 2: preparation P type carbon nano pipe array: silicon dioxide substrates is cleaned 3 times respectively in acetone and alcohol, and nitrogen dries up rear for subsequent use; Then be solute with ferrocene, toluene is solvent, and preparation massfraction is that the toluene solution of the ferrocene of 3% is as precursor liquid; Silicon dioxide substrates after above-mentioned cleaning being dried up puts into tubular furnace, under the argon gas atmosphere being 99.999% with volume percentage purity, in 30min, temperature from ambient in tubular furnace is elevated to 850 DEG C, then with syringe, the precursor liquid of above-mentioned preparation is injected in tubular furnace, the injection rate of precursor liquid is 10mL/h, and before injection, precursor liquid is heated to 200 DEG C; Then at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of the hydrogen of the argon gas and 6% (percent by volume) of 94% (percent by volume), carbon nano-tube is grown in silicon dioxide substrates; After growth terminates, stop the injection of precursor liquid, make silicon dioxide substrates naturally cool to room temperature with stove from 850 DEG C, take out substrate, in silicon dioxide substrates, namely obtain P type carbon nano pipe array;
Step 3: prepare n type carbon nanotube array: silicon dioxide substrates is cleaned 3 times respectively in acetone and alcohol, nitrogen dries up rear for subsequent use; Then be solute with ferrocene, acetonitrile and alcohol mixed solution are solvent, preparation massfraction be the ferrocene solution of 2% as precursor liquid, wherein the mass ratio of acetonitrile and ethanol is 16:1; Silicon dioxide substrates after above-mentioned cleaning being dried up puts into tubular furnace, under the argon gas atmosphere being 99.999% with volume percentage purity, in 30min, the temperature from ambient in tubular furnace is elevated to 850 DEG C, then with syringe, the precursor liquid of above-mentioned preparation is injected in tubular furnace, the injection rate of precursor liquid is 8mL/h, and before injection, precursor liquid is heated to 250 DEG C; Then at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of the hydrogen of the argon gas and 6% (percent by volume) of 94% (percent by volume), carbon nano-tube is grown in silicon dioxide substrates; After growth terminates, stop the injection of precursor liquid, make silicon dioxide substrates naturally cool to room temperature with stove from 850 DEG C, take out substrate, namely in silicon dioxide substrates, obtain n type carbon nanotube array;
Step 4: the methyl phenyl ethers anisole solution silicon dioxide substrates of the band P type carbon nano pipe array obtained in step 2 being dripped the polymethylmethacrylate that step 1 is prepared to whole covering substrate only, put into 150 DEG C, baking oven and dry 20min, after polymethylmethacrylate solidifies, it is peeled off from substrate, obtain the polymethylmethacrylate being with P type carbon nano pipe array, then seamless to ensure between P type carbon nano pipe array and n type carbon nanotube array on the substrate polymethylmethacrylate of band P type carbon nano pipe array being fitted tightly the band n type carbon nanotube array obtained in step 3, the methyl phenyl ethers anisole solution dripping the polymethylmethacrylate that step 1 is prepared stops to whole covering substrate, put into 150 DEG C, baking oven and dry 20min, after polymethylmethacrylate solidifies, it is peeled off from substrate, namely on polymethylmethacrylate, obtain P type carbon nano pipe array stacked from the bottom up and n type carbon nanotube array,
Step 5: some silver slurry on the P type carbon nano pipe array obtained in step 4 and n type carbon nanotube array, and 20min is dried at 120 DEG C, make the solidification of silver slurry, P type carbon nano pipe array and n type carbon nanotube array obtain silver electrode, namely completes the making of the flexible infrared sensor based on carbon nano pipe array.
Fig. 1 is the structural representation of the flexible infrared sensor based on carbon nano pipe array that the embodiment of the present invention obtains.Fig. 2 is the scanning electron microscope diagram (SEM) of the carbon nano pipe array that the embodiment of the present invention prepares.Wherein, (a) is the scanning electron microscope (SEM) photograph of P type carbon nano pipe array, and (b) is the scanning electron microscope (SEM) photograph of n type carbon nanotube array.As shown in Figure 2, embodiment has successfully prepared the carbon nano-tube of array arrangement, and the diameter of n type carbon nanotube is larger than P type carbon nano-tube.
Fig. 3 is the x-ray photoelectron energy spectrogram (XPS) of the n type carbon nanotube array that the embodiment of the present invention obtains.As shown in Figure 2, nitrogen-doping successfully enters in carbon nano-tube by the embodiment of the present invention, obtains n type carbon nanotube array.
Fig. 4 is the response curve of the flexible infrared sensor based on carbon nano pipe array when 850nm wavelength that the embodiment of the present invention obtains.Test process is: at room temperature, two electrodes of the flexible infrared sensor embodiment of the present invention obtained (silver electrode on P type carbon nano pipe array and n type carbon nanotube array) are connected to Agilent B2901A source table, then adopt periodic wavelength to be the Infrared irradiation sensor of 850nm, read both end voltage change by source table.As shown in Figure 4, the flexible infrared sensor of the carbon nano pipe array prepared under room temperature has obvious response to infrared.Flexible infrared sensor prepared by the present invention characterizes infrared response by test P-N junction open-circuit voltage, and the power consumption of sensor is extremely low, but response obviously; The substrate polymethylmethacrylate that the present invention adopts has good flexibility, and the infrared-sensitive material carbon nano-pipe array of employing is listed in when substrate bends and can not damages, and makes the sensor of preparation flexible and good stability.
Claims (8)
1. the flexible infrared sensor based on carbon nano pipe array, comprise substrate and the infrared-sensitive material being positioned at substrate, described infrared-sensitive material is the P-N junction that P type carbon nano pipe array and n type carbon nanotube array are formed, and described P type carbon nano pipe array and n type carbon nanotube array are provided with electrode.
2. the flexible infrared sensor based on carbon nano pipe array according to claim 1, it is characterized in that, described substrate is polymethylmethacrylate, and the electrode that described P type carbon nano pipe array and n type carbon nanotube array are arranged is silver electrode, is obtained by conductive silver paste solidification.
3., based on a preparation method for the flexible infrared sensor of carbon nano pipe array, comprise the following steps:
Step 1: preparation mass concentration is the methyl phenyl ethers anisole solution of the polymethylmethacrylate of 0.08g/mL;
Step 2: adopt floating catalytic chemical vapour deposition technique to prepare P type carbon nano pipe array and n type carbon nanotube array respectively;
Step 3: the methyl phenyl ethers anisole solution substrate of the band P type carbon nano pipe array obtained in step 2 dripping the polymethylmethacrylate that step 1 is prepared to whole covering substrate only, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, obtain the polymethylmethacrylate being with P type carbon nano pipe array, then seamless to ensure between P type carbon nano pipe array and n type carbon nanotube array on the substrate polymethylmethacrylate of band P type carbon nano pipe array being fitted tightly the band n type carbon nanotube array obtained in step 2, the methyl phenyl ethers anisole solution dripping the polymethylmethacrylate that step 1 is prepared stops to whole covering substrate, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, namely on polymethylmethacrylate, obtain stacked P type carbon nano pipe array and n type carbon nanotube array,
Step 4: the P type carbon nano pipe array obtained in step 3 and n type carbon nanotube array prepare electrode.
4. the preparation method of the flexible infrared sensor based on carbon nano pipe array according to claim 3, is characterized in that, described in step 3 by drip have the methyl phenyl ethers anisole solution of polymethylmethacrylate to dry time temperature be 150 DEG C, drying time is 20min; The electrode prepared on P type carbon nano pipe array and n type carbon nanotube array described in step 4 is silver electrode, is obtained by conductive silver paste solidification.
5., based on a preparation method for the flexible infrared sensor of carbon nano pipe array, comprise the following steps:
Step 1: preparation mass concentration is the methyl phenyl ethers anisole solution of the polymethylmethacrylate of 0.08g/mL;
Step 2: adopt floating catalytic chemical vapour deposition technique to prepare P type carbon nano pipe array and n type carbon nanotube array respectively;
Step 3: the methyl phenyl ethers anisole solution substrate of the band n type carbon nanotube array obtained in step 2 dripping the polymethylmethacrylate that step 1 is prepared to whole covering substrate only, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, obtain the polymethylmethacrylate being with n type carbon nanotube array, then seamless to ensure between n type carbon nanotube array and P type carbon nano pipe array on the substrate polymethylmethacrylate of band n type carbon nanotube array being fitted tightly the band P type carbon nano pipe array obtained in step 2, the methyl phenyl ethers anisole solution dripping the polymethylmethacrylate that step 1 is prepared stops to whole covering substrate, put into baking oven to dry, after polymethylmethacrylate solidifies, it is peeled off from substrate, namely on polymethylmethacrylate, obtain stacked n type carbon nanotube array and P type carbon nano pipe array,
Step 4: the n type carbon nanotube array obtained in step 3 and P type carbon nano pipe array prepare electrode.
6. the preparation method of the flexible infrared sensor based on carbon nano pipe array according to claim 5, is characterized in that, described in step 3 by drip have the methyl phenyl ethers anisole solution of polymethylmethacrylate to dry time temperature be 150 DEG C, drying time is 20min; The electrode prepared on n type carbon nanotube array and P type carbon nano pipe array described in step 4 is silver electrode, is obtained by conductive silver paste solidification.
7. the preparation method of the flexible infrared sensor based on carbon nano pipe array according to any one of claim 3 to 6, it is characterized in that, the preparation process of the type of P described in step 2 carbon nano pipe array is: take ferrocene as solute, toluene is solvent, and preparation massfraction is that the toluene solution of the ferrocene of 3% is as precursor liquid; Silicon dioxide substrates is placed in tubular furnace, under an argon atmosphere by heating temperatures in tubular furnace to 850 DEG C, then the precursor liquid of above-mentioned preparation is injected with the speed of 10mL/h, at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of argon gas and hydrogen, carbon nano-tube is grown in silicon dioxide substrates; After thermal treatment terminates, naturally cool to room temperature with stove under an argon atmosphere, in silicon dioxide substrates, namely obtain P type carbon nano pipe array.
8. the preparation method of the flexible infrared sensor based on carbon nano pipe array according to any one of claim 3 to 6, it is characterized in that, the preparation process of the array of n type carbon nanotube described in step 2 is: take ferrocene as solute, acetonitrile and alcohol mixed solution are solvent, preparation massfraction be the ferrocene solution of 2% as precursor liquid, wherein the mass ratio of acetonitrile and ethanol is 16:1; Silicon dioxide substrates is placed in tubular furnace, under an argon atmosphere by heating temperatures in tubular furnace to 850 DEG C, then the precursor liquid of above-mentioned preparation is injected with the speed of 8mL/h, at 850 DEG C, thermal treatment 30min under the mixed-gas atmosphere of argon gas and hydrogen, carbon nano-tube is grown in silicon dioxide substrates; After thermal treatment terminates, naturally cool to room temperature with stove under an argon atmosphere, namely in silicon dioxide substrates, obtain n type carbon nanotube array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674373.7A CN104359561B (en) | 2014-11-21 | 2014-11-21 | A kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674373.7A CN104359561B (en) | 2014-11-21 | 2014-11-21 | A kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104359561A true CN104359561A (en) | 2015-02-18 |
| CN104359561B CN104359561B (en) | 2017-10-17 |
Family
ID=52526844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410674373.7A Active CN104359561B (en) | 2014-11-21 | 2014-11-21 | A kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104359561B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106996829A (en) * | 2016-01-22 | 2017-08-01 | 清华大学 | Imaging sensor |
| CN110885059A (en) * | 2019-04-23 | 2020-03-17 | 厦门大学 | Power generation method of carbon nanotube array |
| CN111735379A (en) * | 2020-05-15 | 2020-10-02 | 吉林大学 | Coated bionic flexible sensor for multi-mode information measurement |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727855A (en) * | 2005-06-15 | 2006-02-01 | 中国科学院上海微***与信息技术研究所 | Micro mechanical Nano tube field emission type non-refrigerant thermal imaging device and method for making |
| US8455828B1 (en) * | 2011-05-09 | 2013-06-04 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using bundled carbon nanotubes and methods of constructing the same |
| CN103557944A (en) * | 2013-10-24 | 2014-02-05 | 北京航空航天大学 | CNT infrared sensor with low power consumption and high sensitivity |
| CN104075811A (en) * | 2014-05-14 | 2014-10-01 | 电子科技大学 | THz detection structure and manufacturing method of high-TCR absorption sensitive composite film |
| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Single-walled carbon nanotube based double-cantilever-beam infrared detector and forming method thereof |
-
2014
- 2014-11-21 CN CN201410674373.7A patent/CN104359561B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727855A (en) * | 2005-06-15 | 2006-02-01 | 中国科学院上海微***与信息技术研究所 | Micro mechanical Nano tube field emission type non-refrigerant thermal imaging device and method for making |
| US8455828B1 (en) * | 2011-05-09 | 2013-06-04 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using bundled carbon nanotubes and methods of constructing the same |
| CN103557944A (en) * | 2013-10-24 | 2014-02-05 | 北京航空航天大学 | CNT infrared sensor with low power consumption and high sensitivity |
| CN104075811A (en) * | 2014-05-14 | 2014-10-01 | 电子科技大学 | THz detection structure and manufacturing method of high-TCR absorption sensitive composite film |
| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Single-walled carbon nanotube based double-cantilever-beam infrared detector and forming method thereof |
Non-Patent Citations (1)
| Title |
|---|
| XIAOWEI HE ET AL.: "Carbon Nanotube Terahertz Detector", 《NANO LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106996829A (en) * | 2016-01-22 | 2017-08-01 | 清华大学 | Imaging sensor |
| CN106996829B (en) * | 2016-01-22 | 2018-11-30 | 清华大学 | Imaging sensor |
| CN110885059A (en) * | 2019-04-23 | 2020-03-17 | 厦门大学 | Power generation method of carbon nanotube array |
| CN110885059B (en) * | 2019-04-23 | 2023-05-09 | 厦门大学 | Power generation method of carbon nano tube array |
| CN111735379A (en) * | 2020-05-15 | 2020-10-02 | 吉林大学 | Coated bionic flexible sensor for multi-mode information measurement |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104359561B (en) | 2017-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xiao et al. | Freestanding functionalized carbon nanotube-based electrode for solid-state asymmetric supercapacitors | |
| Liu et al. | Vertically aligned 1D ZnO nanostructures on bulk alloy substrates: direct solution synthesis, photoluminescence, and field emission | |
| Liu et al. | Measuring the work function of carbon nanotubes with thermionic method | |
| Choi et al. | Synthesis and gas sensing performance of ZnO–SnO2 nanofiber–nanowire stem-branch heterostructure | |
| Huang et al. | Large-scale synthesis of flowerlike ZnO nanostructure by a simple chemical solution route and its gas-sensing property | |
| Peng et al. | Design of ultrathin nanosheet subunits ZnIn2S4 hollow nanocages with enhanced photoelectric conversion for ultrasensitive photoelectrochemical sensing | |
| Pataniya et al. | Highly sensitive and flexible pressure sensor based on two-dimensional MoSe2 nanosheets for online wrist pulse monitoring | |
| Zhang et al. | Growth mechanism, photoluminescence, and field-emission properties of ZnO nanoneedle arrays | |
| Zhang et al. | Straight and thin ZnO nanorods: hectogram-scale synthesis at low temperature and cathodoluminescence | |
| Li et al. | Large area, highly transparent carbon nanotube spiderwebs for energy harvesting | |
| Hung et al. | Comparative effects of synthesis parameters on the NO2 gas-sensing performance of on-chip grown ZnO and Zn2SnO4 nanowire sensors | |
| Wang et al. | Photoelectrochemical self-powered photodetector based on 2D liquid-exfoliated bismuth nanosheets: with novel structures for portability and flexibility | |
| Deng et al. | Flexible three-dimensional SnO2 nanowire arrays: atomic layer deposition-assisted synthesis, excellent photodetectors, and field emitters | |
| Ahmad et al. | Non-aqueous synthesis of hexagonal ZnO nanopyramids: gas sensing properties | |
| CN103474243B (en) | Based on the DSSC of nanometer nickel sulfide sheet to electrode preparation method | |
| CN103862032B (en) | The nucleocapsid noble metal nano rod of four directions superlattices and self-assembling method thereof | |
| CN104359561A (en) | Carbon-nano-tube-array-based flexible infrared sensor and manufacturing method thereof | |
| Liang et al. | Room temperature NO2 sensing performance of free-standing mesh-structure vanadium dioxide nanorods by a chemical vapour deposition method | |
| Ichikawa et al. | Fabrication and evaluation of ZnO nanorods by liquid-phase deposition | |
| CN102709399B (en) | Manufacturing method of high-efficiency nano antenna solar battery | |
| CN101974781A (en) | Method for preparing ZnO nano-rod array at normal temperature and normal pressure | |
| CN103183376B (en) | Synthesis and application of SnO2 nanorod ordered array nanomaterial | |
| Wang et al. | Scalable in situ growth of SnO2 nanoparticle chains on SiC ultrathin fibers via a facile sol–gel-flame method | |
| CN105489384A (en) | Preparation method of C/Sb<2>S<3> composite thin-film counter electrode material | |
| CN104944467A (en) | Stripping technology of conductive titanium dioxide nanorod ordered array film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |