CN103375938A - Refrigeration chip with high heat conduction coefficient and manufacturing method and product thereof - Google Patents
Refrigeration chip with high heat conduction coefficient and manufacturing method and product thereof Download PDFInfo
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- CN103375938A CN103375938A CN2012101209725A CN201210120972A CN103375938A CN 103375938 A CN103375938 A CN 103375938A CN 2012101209725 A CN2012101209725 A CN 2012101209725A CN 201210120972 A CN201210120972 A CN 201210120972A CN 103375938 A CN103375938 A CN 103375938A
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Abstract
The invention provides a refrigeration chip with a high heat conduction coefficient and a manufacturing method and a product thereof. The refrigeration chip comprises a first aluminum nitride layer, a second aluminum nitride layer, a first metal thin film, a second metal thin film, a first copper foil layer, a second copper foil layer, a plurality of P-type semi-conductors and a plurality of N-type semi-conductors, wherein the first metal thin film and the second metal thin film wrap the first aluminum nitride layer and the second aluminum nitride layer respectively, the first copper foil layer and the second copper foil layer are formed on the first metal thin film and the second metal thin film respectively, the plurality of P-type semi-conductors and the plurality of N-type semi-conductors are fixed between the first copper foil layer and the second copper foil layer and arranged alternatively, and the refrigeration chip with the high heat conduction coefficient is provided. In addition, the manufacturing method and the product of the refrigeration chip with the high heat conduction coefficient are further provided.
Description
Technical field
The present invention is relevant with cooling chip, relevant especially a kind of temperature conduction device with high thermal conductivity coefficient cooling chip.
Background technology
The tradition aircondition need to use refrigerant, yet, refrigerant can bring serious problem of environmental pollution on making and reclaiming, therefore occurred utilizing thermoelectric cooling chip (Thermoelectric Cooling Chip) to replace the idea of the air conditioner that uses refrigerant.
Because it is little that thermoelectric cooling chip (hereinafter to be referred as cooling chip) has a volume, noiselessness, do not use refrigerant, the advantages such as nuisanceless environmental protection, so application example of existing many thermoelectric cooling chips, the positive research and development of many insiders utilize thermoelectric cooling chip and cold circulator principle to make can be in order to replace the air conditioner of refrigerant, it consists predominantly of thermoelectric cooling chip, cold circulator, the loose recycle unit of heat and temperature controller, produce cold by thermoelectric cooling chip, transfer to fin with cold storage by cold guide plate via cold circulator again, set required temperature with temperature controller again, by fan the cold blowing that fin stores is sent, the heat that cooling chip produces is then cooled off eliminating by the heat radiation recycle unit, so as to reaching the cold degree that sets.
More than described with thermoelectric cooling chip and replaced traditional air conditioner, and utilize compressor and condenser etc. to reach cooling effect, but, the refrigeration of its thermoelectric cooling chip and radiating effect are not good, main cause is that the surface of thermoelectric cooling chip is made of pottery mostly, because the thermal conductivity factor of pottery is excessively low, so that the heat that thermoelectric cooling chip produces can't conduct to rapidly by pottery other radiator, cause the temperature of this thermoelectric cooling chip can't be reduced to desired temperature, make the cold or heat extraction of the row of aircondition all can't reach desired temperature.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of cooling chip of high thermal conductivity coefficient, and this cooling chip can conduct to other heat carrier rapidly with heat.
For achieving the above object, the invention provides a kind of cooling chip of high thermal conductivity coefficient, this cooling chip comprises the first aln layer and the second aln layer, the first metallic film and the second metallic film, the first copper foil layer and the second copper foil layer, and mutual most P-type semiconductors and most N-type semiconductors of arranging, the first metallic film is coated on the first aln layer, the second metallic film is coated on the second aln layer, the first copper foil layer is formed on the first metallic film, the second copper foil layer is formed on the second metallic film, P-type semiconductor and N-type semiconductor are fixed between the first copper foil layer and the second copper foil layer, wherein, the first aln layer and the second aln layer correspondence are positioned at the opposite side of P-type semiconductor and N-type semiconductor.
Further, this cooling chip also comprises the first soldering-tin layer and the second soldering-tin layer, this first soldering-tin layer is coated on described the first copper foil layer, this second soldering-tin layer is coated on described the second copper foil layer, and described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
Further, described the first metallic film and described the second metallic film are respectively the titanium film.
In view of this, another object of the present invention is to provide a kind of method for making of cooling chip of high thermal conductivity coefficient, this method for making can be made the cooling chip with high thermal conductivity coefficient.
For achieving the above object, the invention provides a kind of method for making of cooling chip of high thermal conductivity coefficient, this method for making may further comprise the steps: the first aln layer and the second aln layer a) are provided; B) coating the first metallic film on the first aln layer, coating the second metallic film on the second aln layer; C) form the first copper foil layer at the first metallic film, form the second copper foil layer at the second metallic film; And d) provides most P-type semiconductors and most N-type semiconductors of mutual arrangement, and P-type semiconductor and N-type semiconductor are fixed between the first copper foil layer and the second copper foil layer.
Further, described step also is included in coating the first soldering-tin layer on described the first copper foil layer, at described the second copper foil layer coating the second soldering-tin layer.
Further, described step also comprises described the first soldering-tin layer of melting and described the second soldering-tin layer, so that described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
Further, described the first metallic film and described the second metallic film described step b) are respectively the titanium film.
In view of this, a further object of the present invention is to provide a kind of cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient, this switch comprises the cooling chip with cold junction face and hot junction face, the first conduction module and the second conduction module, cooling chip comprises the first aln layer and the second aln layer, the first metallic film and the second metallic film, the first copper foil layer and the second copper foil layer, and mutual most P-type semiconductors and most N-type semiconductors of arranging, the first metallic film is coated on the first aln layer, the second metallic film is coated on the second aln layer, the first copper foil layer is formed on the first metallic film, the second copper foil layer is formed on the second metallic film, P-type semiconductor and N-type semiconductor are fixed between the first copper foil layer and the second copper foil layer, wherein, the first aln layer and the second aln layer correspondence are positioned at the opposite side of P-type semiconductor and N-type semiconductor; The first conduction module comprises the first pedestal of amplexiforming on the cold junction face of cooling chip, be fixed on the first fin more than two, and first fan of device on the first fin of the first pedestal; The second conduction module comprises the second pedestal, two the above superconducting pipes that are fixed on the second pedestal that amplexiform on the face of the hot junction of cooling chip, be socketed in the second fin more than two on the superconducting pipe, and second fan of device on the second fin.
Further, described cooling chip also comprises the first soldering-tin layer and the second soldering-tin layer, this first soldering-tin layer is coated on described the first copper foil layer, this second soldering-tin layer is coated on described the second copper foil layer, and described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
Further, described the first metallic film and described the second metallic film are respectively the titanium film.
Further, this switch also comprises Windshield and the rear wind scooper that mutual cover closes, this Windshield has the front air intake vent of corresponding described the first fan and the front air outlet of corresponding described the first fin, and wind scooper has the rear air intake vent of corresponding described the second fan and the rear air outlet of corresponding described the second fin after this.
Further, this switch also comprises upper support seat and lower support seat, described the first conduction module of this upper support seat mask is so that this first conduction module is fixed on this Windshield, and this lower support seat frame cover described second conducts module so that this second conduction module is fixed on this rear wind scooper.
Compared to prior art, cooling chip of the present invention replaces existing ceramic wafer with the aluminium nitride laminate, because the thermal conductivity factor of aluminium nitride is much larger than the thermal conductivity factor of pottery, therefore, cooling chip of the present invention can conduct to cold (heat) on other conduction object rapidly, to continue to reduce the temperature of cooling chip, and reach required refrigeration temperature, but, because the density of aluminium nitride is high, cause Copper Foil can't direct forming on aln layer, therefore, the present invention forms metallic film (such as the titanium film) on the surface of aluminium nitride first, Copper Foil is formed on the metallic film again, finishes accordingly the making of the cooling chip with high thermal conductivity coefficient; In addition, compared to the existing aircondition that needs the assemblies such as compressor of the large electric weight of use, cold-heat-exchanging exchange system of the present invention only need provide electric power in a small amount (for cooling chip and fan) to operate, and can save a large amount of energy and the electricity charge, more meets the feature of environmental protection and economy.
Description of drawings
Fig. 1 is the schematic perspective view of cold-heat-exchanging exchange system of the present invention;
Fig. 2 is the perspective exploded view of cold-heat-exchanging exchange system of the present invention;
Fig. 3 is the combination cross-sectional schematic of cooling chip of the present invention;
Fig. 4 is the preparation flow chart of cooling chip of the present invention;
Fig. 5 is the perspective exploded view of cold-heat-exchanging exchange system application implementation of the present invention;
Fig. 6 is the schematic perspective view of cold-heat-exchanging exchange system application implementation of the present invention;
Use schematic diagram when Fig. 7 is cold-heat-exchanging exchange system application implementation of the present invention.
Description of reference numerals
1 cold-heat-exchanging exchange system, 10 cooling chips
11 cold junction faces, 12 hot junction faces
11a the first aln layer 11b the second aln layer
12a the first metallic film 12b the second metallic film
13a the first copper foil layer 13b the second copper foil layer
14a the first soldering-tin layer 14b the second soldering-tin layer
15a P-type semiconductor 15b N-type semiconductor
20 first conduction modules, 21 first pedestals
22 first fins, 23 first fans
30 second conduction modules, 31 second pedestals
32 superconducting pipes, 33 second fins
34 second fans, 40 Windshields
41 front inlet air 42 front air outlets
50 rear wind scooper 51 rear air intake vents
52 rear air outlet 60 upper support seats
70 lower support seats are a～d step
131a the first Copper Foil conductor 131b the second Copper Foil conductor
The specific embodiment
Relevant detailed description of the present invention and technology contents will cooperate description of drawings as follows, yet appended accompanying drawing purposes as an illustration only is not for limitation the present invention.
Please refer to Fig. 1 and Fig. 2, be respectively schematic perspective view and the perspective exploded view of cold-heat-exchanging exchange system of the present invention; Cold-heat-exchanging exchange system 1 of the present invention comprises that the cooling chip 10, first with cold junction face 11 and hot junction face 12 conducts module 20, reaches the second conduction module 30.In the present embodiment, this cold-heat-exchanging exchange system 1 comprises two cooling chips 10 and corresponding two first conduction modules 20 and the second conduction module 30, during actual enforcement, the quantity of this cooling chip 10, the first conduction module 20 and the second conduction module 30 does not limit visual actual demand and adjusting.
This first conduction module 20 comprises amplexiforms at the first pedestal 21 on the cold junction face 11 of this cooling chip 10, the first fin 22 more than two that is fixed on this first pedestal 21, and first fan 23 of device on this first fin 22.
This second conduction module 30 comprise amplexiform the second pedestal 31 on the hot junction of this cooling chip 10 face 12, be fixed on this second pedestal 31 two above superconducting pipes 32, be socketed in the second fin 33 more than two on this superconducting pipe 32, and second fan 34 of device on this second fin 33.
The structure of this cooling chip 10 and method for making more detailed description thereof are as follows.
Please refer to Fig. 3 and Fig. 4, be respectively combination cross-sectional schematic and the preparation flow chart of cooling chip of the present invention; This cooling chip 10 comprises the first aln layer 11a and the second aln layer 11b, the first metallic film 12a and the second metallic film 12b, the first copper foil layer 13a and the second copper foil layer 13b, the first soldering-tin layer 14a and the second soldering-tin layer 14b, most P-type semiconductor 15a and most N-type semiconductor 15b.
When making this cooling chip 10, at first, the first aln layer 11a and the second aln layer 11b are provided, and (step a).This first aln layer 11a and the second aln layer 11b (Aluminium nitride, AlN) be a kind of ceramics insulator, its thermal conductivity factor is greatly about 180～240W/M.K, because the purity of aluminium nitride is high, particle diameter is little, be evenly distributed, and have good ejection formation performance, so has higher heat-transfer capability compared to general pottery.
Then, coating the first metallic film 12a on this first aluminium nitride 11a layer, coating the second metallic film 12b (step b) on this second aln layer 11b, namely, this first metallic film 12a is coated on this first aln layer 11a, and this second metallic film 12b is coated on this second aln layer 11b.
Preferably, this the first metallic film 12a and this second metallic film 12b can be respectively the titanium film, by the setting of this first metallic film 12a and this second metallic film 12b, can be beneficial to this first copper foil layer 13a and the second copper foil layer 13b are respectively formed on density high the first metallic film 12a and the second metallic film 12b.
Then, form the first copper foil layer 13a at this first metallic film 12a, form the second copper foil layer 13b (step c) at this second metallic film 12b; That is, this first copper foil layer 13a is formed on this first metallic film 12a, and this second copper foil layer 13b is formed on this second metallic film 12b.During actual enforcement, this first copper foil layer 13a comprises spaced the first Copper Foil conductor 131a more than two, this second copper foil layer 13b comprises spaced the second Copper Foil conductor 131b more than two, and this first Copper Foil conductor 131a and the second Copper Foil conductor 131b are staggered and arrange.
In addition, at this first copper foil layer 13a coating the first soldering-tin layer 14a, at this second copper foil layer 13b coating the second soldering-tin layer 14b.Again, most P-type semiconductor 15a and most N-type semiconductor 15b of mutual arrangement are provided, and this P-type semiconductor and this N-type semiconductor are fixed between this first copper foil layer 13a and this second copper foil layer 13b (the first soldering-tin layer 14a and the second soldering-tin layer 14b) (steps d).
By this first soldering-tin layer 14a is coated on this first copper foil layer 13a, this second soldering-tin layer 14b is coated on this second copper foil layer 13b, behind this first soldering-tin layer 14a of melting and this second soldering-tin layer 14b, this P-type semiconductor 15a and N-type semiconductor 15b namely are combined on this first soldering-tin layer 14a and this second soldering-tin layer 14b, accordingly, this the first aln layer 11a and this second aln layer 11b correspondence are positioned at the opposite side of this P-type semiconductor 15a and this N-type semiconductor 15b, to amplexiform other thermal conductor as connecting face.
Please in addition with reference to Fig. 5 and Fig. 6, be respectively perspective exploded view and the schematic perspective view of cold-heat-exchanging exchange system application implementation of the present invention; The mutually Windshield 40 that closes of cover and rear wind scooper 50, and up and down mutually upper support seat 60 and the lower support seat 70 of butt before and after also can comprising during cold-heat-exchanging exchange system 1 practical application of the present invention.
This Windshield 40 has to front air intake vent 41 that should the first fan 23 and to front air outlet 42 that should the first fin 22.Should after wind scooper 50 have to rear air intake vent 51 that should the second fan 34 and to rear air outlet 52 that should the second fin 33.In addition, this upper support seat 60 masks, first conduction module 20 is so that the first conduction module 20 is fixed on this Windshield 40, and these lower support seat 70 masks second conduct module 30 so that the second conduction module 30 is fixed on this rear wind scooper 50.
Then, please refer to Fig. 7, the use schematic diagram during for cold-heat-exchanging exchange system application implementation of the present invention; Cold-heat-exchanging exchange system of the present invention can be applicable on the equipment such as air conditioner, ice cream maker, reach in freezer or automobile air, during actual enforcement not as limit.
The cold-heat-exchanging exchange system of present embodiment is used on the refrigerator.During use, the first pedestal 21 of this first conduction module 20 amplexiforms the cold junction face 11 of this cooling chip 10 and takes away the cold of this cooling chip 10, and conducts to this first fin 22; Simultaneously, cool exterior air from should before air intake vent 41 flow in this first conduction module 20, flow into this first fin 22 via the guiding of this first fan 23, again the cold belt of this first fin 22 is walked and is flowed into this front air outlet 42; Accordingly, take away constantly cold (cooling effect) of this first conduction module 20, and utilize the first fan 23 to be blown into front air outlet 42 to flow into the inside of refrigerator, can make the inside of this refrigerator reach desired cold degree.
On the other hand, second pedestal 31 of this second conduction module 30 amplexiforms the hot junction face 12 of this cooling chip 10 and takes away the heat of this cooling chip 10, and conduct to this superconducting pipe 32, via the conduction of this superconducting pipe 32 heat is conducted to this second fin 33 rapidly, simultaneously, cool exterior air is from flowing in these second guided modeses 30 by rear air intake vent 51, flow into this second fin 33 via the guiding of this second fan 34, the forced draft that this second fan 34 produces can promptly be taken away the heat of this second fin 33, and certainly should flow out by rear air outlet 52; Accordingly, take away constantly the heat (radiating effect) of this second conduction module 30, so that this cooling chip 10 produces cooling effect sustainably, the inside that then reaches refrigerator reaches desired cold degree.
It is worth mentioning that, this cold-heat-exchanging exchange system 1 can contact according to user demand two above cooling chips 10, first the conduction module 20 and second the conduction module 30, to reach better refrigeration (or pyrogenicity) effect.
The above is specifying of preferred embodiment of the present invention only, is not to limit to protection scope of the present invention, and other any equivalent transformation all should belong to the application's claim scope.
Claims (12)
1. the cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient is characterized in that, this switch comprises:
Have the cooling chip of cold junction face and hot junction face, comprising:
The first aln layer and the second aln layer;
The first metallic film and the second metallic film, this first metallic film are coated on this first aln layer, and this second metallic film is coated on this second aln layer;
The first copper foil layer and the second copper foil layer, this first copper foil layer are formed on this first metallic film, and this second copper foil layer is formed on this second metallic film; And
A most P-type semiconductor and most N-type semiconductors are arranged alternately and are fixed between this first copper foil layer and this second copper foil layer, and wherein, this first aln layer and this second aln layer correspondence are positioned at the opposite side of this P-type semiconductor and this N-type semiconductor;
The first conduction module comprises and amplexiforms at the first pedestal on the cold junction face of this cooling chip, the first fin more than two that is fixed on this first pedestal, and first fan of device on this first fin; And
The second conduction module, comprise amplexiform one second pedestal on the face of the hot junction of this cooling chip, be fixed on this second pedestal two above superconducting pipes, be socketed in the second fin more than two on this superconducting pipe, and second fan of device on this second fin.
2. the cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient as claimed in claim 1, it is characterized in that, described cooling chip also comprises the first soldering-tin layer and the second soldering-tin layer, this first soldering-tin layer is coated on described the first copper foil layer, this second soldering-tin layer is coated on described the second copper foil layer, and described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
3. the cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient as claimed in claim 1 is characterized in that, described the first metallic film and described the second metallic film are respectively the titanium film.
4. the cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient as claimed in claim 1, it is characterized in that, this switch also comprises Windshield and the rear wind scooper that mutual cover closes, this Windshield has the front air intake vent of corresponding described the first fan and the front air outlet of corresponding described the first fin, and wind scooper has the rear air intake vent of corresponding described the second fan and the rear air outlet of corresponding described the second fin after this.
5. the cold-heat-exchanging exchange system with cooling chip of high thermal conductivity coefficient as claimed in claim 4, it is characterized in that, this switch also comprises upper support seat and lower support seat, described the first conduction module of this upper support seat mask is so that this first conduction module is fixed on this Windshield, and this lower support seat frame cover described second conducts module so that this second conduction module is fixed on this rear wind scooper.
6. the cooling chip of a high thermal conductivity coefficient is characterized in that, this cooling chip comprises:
The first aln layer and the second aln layer;
The first metallic film and the second metallic film, this first metallic film are coated on this first aln layer, and this second metallic film is coated on this second aln layer;
The first copper foil layer and the second copper foil layer, this first copper foil layer are formed on this first metallic film, and this second copper foil layer is formed on this second metallic film; And
Mutual most P-type semiconductors and most N-type semiconductors of arranging are fixed between this first copper foil layer and this second copper foil layer;
Wherein, this first aln layer and this second aln layer correspondence are positioned at the opposite side of this P-type semiconductor and this N-type semiconductor.
7. the cooling chip of high thermal conductivity coefficient as claimed in claim 6, it is characterized in that, this cooling chip also comprises the first soldering-tin layer and the second soldering-tin layer, this first soldering-tin layer is coated on described the first copper foil layer, this second soldering-tin layer is coated on described the second copper foil layer, and described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
8. the cooling chip of high thermal conductivity coefficient as claimed in claim 6 is characterized in that, described the first metallic film and described the second metallic film are respectively the titanium film.
9. the method for making of the cooling chip of a high thermal conductivity coefficient is characterized in that, this method for making may further comprise the steps:
A) provide the first aln layer and the second aln layer;
B) coating the first metallic film on this first aln layer, coating the second metallic film on this second aln layer;
C) form the first copper foil layer at this first metallic film, form the second copper foil layer at this second metallic film; And
D) provide most P-type semiconductors and most N-type semiconductors of mutual arrangement, and this P-type semiconductor and this N-type semiconductor are fixed between this first copper foil layer and this second copper foil layer.
10. the method for making of the cooling chip of high thermal conductivity coefficient as claimed in claim 9 is characterized in that, described step also is included in coating the first soldering-tin layer on described the first copper foil layer, at described the second copper foil layer coating the second soldering-tin layer.
11. the method for making of the cooling chip of high thermal conductivity coefficient as claimed in claim 10, it is characterized in that, described step also comprises described the first soldering-tin layer of melting and described the second soldering-tin layer, so that described P-type semiconductor and described N-type semiconductor are combined on this first soldering-tin layer and this second soldering-tin layer.
12. the method for making of the cooling chip of high thermal conductivity coefficient as claimed in claim 9 is characterized in that, described step b) in described the first metallic film and described the second metallic film be respectively the titanium film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101209725A CN103375938A (en) | 2012-04-23 | 2012-04-23 | Refrigeration chip with high heat conduction coefficient and manufacturing method and product thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101209725A CN103375938A (en) | 2012-04-23 | 2012-04-23 | Refrigeration chip with high heat conduction coefficient and manufacturing method and product thereof |
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| CN103375938A true CN103375938A (en) | 2013-10-30 |
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| CN2012101209725A Pending CN103375938A (en) | 2012-04-23 | 2012-04-23 | Refrigeration chip with high heat conduction coefficient and manufacturing method and product thereof |
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Citations (5)
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|---|---|---|---|---|
| JPH10125960A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electric Works Ltd | Thermoelectric conversion device |
| CN101587934A (en) * | 2008-05-21 | 2009-11-25 | 财团法人工业技术研究院 | Diaphragm type thermoelectric converting component and manufacturing method thereof |
| CN101847686A (en) * | 2009-03-26 | 2010-09-29 | 中国科学院上海硅酸盐研究所 | Thermoelectric device, electrode material and manufacturing method thereof |
| CN102128517A (en) * | 2010-01-13 | 2011-07-20 | 林义民 | Cold and hot exchange device |
| CN202562127U (en) * | 2012-04-23 | 2012-11-28 | 林义民 | Cold-heat exchange device with refrigeration chip with high thermal conductivity |
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2012
- 2012-04-23 CN CN2012101209725A patent/CN103375938A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10125960A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electric Works Ltd | Thermoelectric conversion device |
| CN101587934A (en) * | 2008-05-21 | 2009-11-25 | 财团法人工业技术研究院 | Diaphragm type thermoelectric converting component and manufacturing method thereof |
| CN101847686A (en) * | 2009-03-26 | 2010-09-29 | 中国科学院上海硅酸盐研究所 | Thermoelectric device, electrode material and manufacturing method thereof |
| CN102128517A (en) * | 2010-01-13 | 2011-07-20 | 林义民 | Cold and hot exchange device |
| CN202562127U (en) * | 2012-04-23 | 2012-11-28 | 林义民 | Cold-heat exchange device with refrigeration chip with high thermal conductivity |
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Application publication date: 20131030 |