CN103367467A - Solar cell - Google Patents
Solar cell Download PDFInfo
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- CN103367467A CN103367467A CN2013103355701A CN201310335570A CN103367467A CN 103367467 A CN103367467 A CN 103367467A CN 2013103355701 A CN2013103355701 A CN 2013103355701A CN 201310335570 A CN201310335570 A CN 201310335570A CN 103367467 A CN103367467 A CN 103367467A
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- solar cell
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- silicon oxynitride
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Abstract
The invention discloses a solar cell. The solar cell sequentially comprises a back electrode, an aluminum back field, a silicon chip, a diffusion layer, a passivation layer and a positive electrode from bottom to top, and the passivation layer is a silicon oxynitride single layer or a silicon oxynitride/silicon nitride laminated structure, wherein silicon oxynitride is formed by depositing N2O, SiH4 and NH3, and the volume ratio of the N2O to the SiH4 is larger than 1: 1. By adopting the solar cell disclosed by the invention, the problem of lower photoelectric conversion efficiency of the solar cell can be effectively solved, and a PID (potential induced degradation)-free photovoltaic component can be simultaneously realized.
Description
Technical field
The present invention relates to area of solar cell, relate in particular to a kind of solar cell with anti-PID performance passivating film.
Background technology
Photovoltaic module carries out long-term work under condition of high voltage, meeting is so that exist leakage current between the glass, encapsulating material.And when a large amount of accumulation in cell piece when surface, meeting is so that the passivation effect deterioration of battery surface, as cause fill factor, curve factor (Fill Factor, FF), short circuit current (Isc), open circuit voltage (Uoc) to reduce, and then so that assembly property is lower than design standard.
Using at present maximum is front (positive electrode one side) deposit Si at solar cell
xN
yThe time, increase Si
xN
yThe refractive index of film (as shown in Figure 1); Perhaps at the front of battery deposition SiO
2/ Si
xN
y(as shown in Figure 2) lamination composite membrane is realized anti-PID(Potential Induced Degradation, and electromotive force is induced decay) effect.
But, improve Si
xN
yThe refractive index of film can make the extinction effect of solar cell strengthen, and then causes the decline of cell photoelectric conversion efficiency.And using SiO
2/ Si
xN
yDuring the lamination composite membrane, owing to have not mating of refractive index between silicon dioxide and the silicon nitride, meeting is so that become greatly reflection of light, and catoptrical increasing, the light that will inevitably cause can be used for opto-electronic conversion tails off, and then affects battery efficiency.In addition, in actual production process, find, at SiO
2During deposition, because H(hydrogen) contain quantity not sufficient, can cause the H passivation effect not find full expression, so the electric current of solar cell, voltage and fill factor, curve factor all are significantly reduced, and then cause the photoelectric conversion efficiency of battery on the low side.
In sum, in the prior art, do not have a kind of PID-Free(that can realize photovoltaic module and avoid electrical potential difference and bring out decay), and can solve well again the passivation layer of cell photoelectric conversion efficiency problem on the low side.
Summary of the invention
The present invention is by using silicon oxynitride (Si
xO
yN
z) layer (as shown in Figure 3) or Si
xO
yN
z/ Si
xN
y(silicon nitride) lamination (as shown in Figure 4) when guaranteeing that the cell photoelectric conversion efficiency does not reduce, has been realized the PID-Free of photovoltaic module as the passivation layer of solar cell.
According to an aspect of the present invention, a kind of solar cell is provided, described solar cell comprises from the bottom to top successively: back electrode, aluminium back surface field, silicon chip, diffusion layer, passivation layer and positive electrode, described passivation layer are silicon oxynitride individual layer or silicon oxynitride/silicon nitride stack structure.
According to a specific embodiment of the present invention, described silicon oxynitride using plasma strengthens the chemical vapour deposition (CVD) mode and generates.
According to another embodiment of the present invention, described silicon oxynitride is by N
2O, SiH
4, NH
3Deposition forms.
According to another embodiment of the present invention, described N
2O and described SiH
4Volume ratio be at least 1:1.
According to another embodiment of the present invention, described silicon chip is N-shaped silicon chip or p-type silicon chip.
According to another embodiment of the present invention, described diffusion layer adopts Implantation or diffusion method to form.
The present invention adopts N
2O, SiH
4And NH
3Deposit obtains Si
xO
yN
z, utilize N
2O and SiH
4In enough Si-O keys, guarantee the PID-Free of solar cell.After enough Si-O keys are arranged, continue to pass into NH
3, so that a large amount of H is rich in the composition gas the inside, can makes like this battery that good H passivation is arranged, and then can improve the photoelectric conversion efficiency of battery.
PID-Free refers to photovoltaic module 85 ℃ of temperature, and under the environment of humidity 85%, the aluminium frame loads 1000V voltage, and terminal box connect negative pole after 48 hours, and component power decays less than or equal to 5%.Adopt silicon oxynitride provided by the invention to be used for anti-PID passivation layer, can guarantee that under above-mentioned test condition test after 96 hours, the power attenuation of photovoltaic module is satisfied PID-Free less than or equal to 5%, can guarantee the useful life in 25 years of photovoltaic module.
Description of drawings
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Figure 1 shows that the structural representation of an embodiment of the solar cell that adopts traditional passivating film;
Figure 2 shows that the structural representation of another embodiment of the solar cell that adopts traditional passivating film;
Figure 3 shows that the structural representation of an embodiment that adopts a kind of solar cell provided by the invention;
Figure 4 shows that the structural representation of another embodiment that adopts a kind of solar cell provided by the invention.
Same or analogous Reference numeral represents same or analogous parts in the accompanying drawing.
Embodiment
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting of specific examples are described.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between the various embodiment that discuss of institute and/or the setting.Should be noted that illustrated parts are not necessarily drawn in proportion in the accompanying drawings.The present invention has omitted description to known assemblies and treatment technology and technique to avoid unnecessarily limiting the present invention.
With reference to figure 3, Figure 3 shows that the structural representation of a kind of embodiment of solar cell provided by the invention.
The matte (not shown) that preparation optionally, is arranged on silicon chip 100.The result of making herbs into wool can make incident light at surperficial Multi reflection, has increased Optical Absorption, but Effective Raise short circuit current and the photoelectric conversion efficiency of solar cell.The preparation of matte can be adopted chemical corrosion method, as realizing with chemicals such as all kinds of acid, alkali; Or by dry method making herbs into wool, such as reactive ion etching (RIE), laser ablation etc.Alkaline solution commonly used is for example: NaOH, potassium hydroxide, lithium hydroxide and ethylenediamine etc.In order to obtain uniform matte, optional, also can in solution, add as one feels fit alcohols such as ethanol and isopropyl alcohol etc. as complexing agent.
Need to form the diffusion layer (not shown) at silicon chip 100 after the making herbs into wool, described diffusion layer is the p-n junction part of solar cell, also is the key component of solar cell.The formation of diffusion layer can be adopted the mode of diffusion, also can adopt the mode of Implantation.When adopting ion implantation, when silicon chip 100 is the P type, adopt phosphonium ion to inject; And when silicon chip 100 is the N-shaped silicon chip, then adopt the boron ion to inject.Similar to Implantation, when adopting diffusion method to form diffusion layer, when silicon chip 100 is p-type, carry out the phosphorus diffusion; When silicon chip 100 is the N-shaped silicon chip, carry out the boron diffusion.
On diffusion layer, form passivation layer silicon oxynitride layer 230.Silicon oxynitride (Si
xO
yN
z) layer 230 adopts the mode of vapour depositions to form.Preferably, adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) formation of method deposition.This layer is by N
2O, SiH
4, NH
3Deposition forms.In addition, preferred, by theoretical and experiment showed, at N
2O, SiH
4, NH
3In the ternary system, N
2O and SiH
4Between volume ratio be greater than 1:1, Assurance component PID-Free better.
In addition, preferred, can also form the lamination passivation layer, as shown in Figure 4, on silicon oxynitride layer 230, form again silicon nitride (SiNx) layer 210.Deposited silicon nitride layer 210 can adopt various conventional method well known to those skilled in the art.Preferably, silicon chip 100 is placed the tubular type PECVD stove of hydrogen atmosphere, annealing; Then boiler tube is evacuated to 0Pa～50Pa, removes residual gas; Constant pressure is filled with silane and ammonia, deposited silicon nitride layer 210.
Aluminium back surface field 300 and back electrode 320 are arranged at the back side of silicon chip 100.Aluminium back surface field 300 has the function of passivation and transoid, and it is compound further to reduce charge carrier, improves minority carrier life time, improves the photoelectric conversion efficiency of solar cell.Method by silk screen printing is at back up one deck aluminium paste of silicon chip 100, and then sintering can form aluminium back surface field 300.
Be formed with positive electrode 310 in the front of silicon chip 100.Optionally, above-mentioned back electrode 310 and/or positive electrode 310 can adopt printing or the mode of electroplating prepares; Used material can be the suitable metal materials such as silver or copper.
The present invention is by using silicon oxynitride individual layer or Si
xO
yN
z/ Si
xN
yLamination when guaranteeing that the solar cell photoelectric conversion efficiency does not reduce, has been realized the PID-Free of photovoltaic module as the passivation layer of solar cell.
Although describe in detail about example embodiment and advantage thereof, be to be understood that in the situation of the protection range that does not break away from the restriction of spirit of the present invention and claims, can carry out various variations, substitutions and modifications to these embodiment.For other examples, when those of ordinary skill in the art should understand easily within keeping protection range of the present invention, the order of processing step can change.
Claims (6)
1. solar cell, described solar cell comprises from the bottom to top successively: back electrode, aluminium back surface field, silicon chip, diffusion layer, passivation layer and positive electrode, it is characterized in that,
Described passivation layer is silicon oxynitride individual layer or silicon oxynitride/silicon nitride stack structure.
2. solar cell according to claim 1 is characterized in that, described silicon oxynitride using plasma strengthens the chemical vapour deposition (CVD) mode and generates.
3. solar cell according to claim 2 is characterized in that, described silicon oxynitride is by N
2O, SiH
4, NH
3Deposition forms.
4. solar cell according to claim 3 is characterized in that, described N
2O and described SiH
4Volume ratio greater than 1:1.
5. solar cell according to claim 1 is characterized in that, described silicon chip is N-shaped silicon chip or p-type silicon chip.
6. solar cell according to claim 1 is characterized in that, described diffusion layer adopts Implantation or diffusion method to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103355701A CN103367467A (en) | 2013-08-02 | 2013-08-02 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103355701A CN103367467A (en) | 2013-08-02 | 2013-08-02 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103367467A true CN103367467A (en) | 2013-10-23 |
Family
ID=49368421
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|---|---|---|---|
| CN2013103355701A Pending CN103367467A (en) | 2013-08-02 | 2013-08-02 | Solar cell |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538486A (en) * | 2014-11-19 | 2015-04-22 | 横店集团东磁股份有限公司 | A manufacturing process for directly growing silicon oxide film of crystal silicon cell via laughing gas |
| CN104762610A (en) * | 2015-01-16 | 2015-07-08 | 横店集团东磁股份有限公司 | PECVD film coating method |
| CN104900722A (en) * | 2014-12-09 | 2015-09-09 | 杭州大和热磁电子有限公司 | Crystalline silicon solar cell with three-layer antireflection film and preparation method thereof |
| CN106972067A (en) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell |
| CN107452830A (en) * | 2016-05-31 | 2017-12-08 | 比亚迪股份有限公司 | One kind back of the body passivation solar cell and preparation method thereof |
| CN109148613A (en) * | 2018-08-23 | 2019-01-04 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of the two-sided PERC solar cell of anti-PID |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
| CN114420768A (en) * | 2020-10-13 | 2022-04-29 | 意诚新能(苏州)科技有限公司 | Back passivation film, preparation method and crystalline silicon solar cell |
| US11605748B2 (en) | 2021-02-23 | 2023-03-14 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, method for producing same and solar module |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538486A (en) * | 2014-11-19 | 2015-04-22 | 横店集团东磁股份有限公司 | A manufacturing process for directly growing silicon oxide film of crystal silicon cell via laughing gas |
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| CN104900722A (en) * | 2014-12-09 | 2015-09-09 | 杭州大和热磁电子有限公司 | Crystalline silicon solar cell with three-layer antireflection film and preparation method thereof |
| CN104762610A (en) * | 2015-01-16 | 2015-07-08 | 横店集团东磁股份有限公司 | PECVD film coating method |
| CN107452830A (en) * | 2016-05-31 | 2017-12-08 | 比亚迪股份有限公司 | One kind back of the body passivation solar cell and preparation method thereof |
| CN106972067A (en) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell |
| CN109148613A (en) * | 2018-08-23 | 2019-01-04 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of the two-sided PERC solar cell of anti-PID |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
| CN114420768A (en) * | 2020-10-13 | 2022-04-29 | 意诚新能(苏州)科技有限公司 | Back passivation film, preparation method and crystalline silicon solar cell |
| US11605748B2 (en) | 2021-02-23 | 2023-03-14 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, method for producing same and solar module |
| US11749768B2 (en) | 2021-02-23 | 2023-09-05 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, method for producing same and solar module |
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Application publication date: 20131023 |
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