CN109148613A - A kind of preparation method of the two-sided PERC solar cell of anti-PID - Google Patents
A kind of preparation method of the two-sided PERC solar cell of anti-PID Download PDFInfo
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- CN109148613A CN109148613A CN201810966040.XA CN201810966040A CN109148613A CN 109148613 A CN109148613 A CN 109148613A CN 201810966040 A CN201810966040 A CN 201810966040A CN 109148613 A CN109148613 A CN 109148613A
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- solar cell
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- sided perc
- perc solar
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 19
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 19
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 14
- 238000004062 sedimentation Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- -1 backboard Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006385 ozonation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to crystal silicon solar energy battery technology of preparing more particularly to a kind of preparation methods of the two-sided PERC solar cell of anti-PID, it includes back side process technique, and the back side process technique is the following steps are included: S1, backside deposition aluminum oxide film；S2, backside deposition silicon oxynitride film；S3, backside deposition silicon nitride film.Cost is relatively low and simple process for the preparation method of this two-sided PERC solar cell of anti-PID.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technology of preparing more particularly to a kind of two-sided PERC solar cells of anti-PID
Preparation method.
Background technique
PID(Potential Induced Degradation) effect is known as high pressure induced attenuation effect, and it is photovoltaic module
A kind of attenuation effect occurred under high pressure.With the gradually popularization and application of photovoltaic parallel in system, system voltage is increasingly
Height, component internal cell piece is higher and higher relative to the voltage of the earth, and some is even up to 600-1000V, the aluminium of usual component
Frame requires ground connection, is formed the high pressure of 600-1000V between cell piece and aluminium frame in this way.General photovoltaic module
Structure is 5 layers, and among two layers of EVA encapsulating film, glass and the backboard EVA in outermost layer, lamination process are formd cell piece
Bright, electrical isolation substance.However, any plastic material is impossible to 100% insulation, there is a degree of electric conductivity, it is special
It is not in an environment with high humidity, to have leakage current and flowed through by cell piece, in encapsulating material, glass, backboard, aluminium frame,
If forming high voltage between internal circuit and aluminium frame, leakage current will reach microampere or milliampere rank, and here it is the sun
The high pressure inductive effect (PID effect) of energy battery, PID effect the deterioration of battery surface passivation effect and are formed to leak electricity back
Road causes fill factor, open-circuit voltage, short circuit current to reduce, makes assembly property lower than design standard, while can lead to component function
30% or more rate decline.
Two-sided PERC(Passivated Emitter and Rear Cell) solar cell, high conversion efficiency, it is two-sided
It can generate electricity, component package power can be improved.Staple product as crystal-silicon solar cell.Two-sided PERC battery production process:
Making herbs into wool, diffusion, etching, positive silicon nitride film, backside deposition pellumina and silicon nitride film, the back side carry out laser slotting,
Print upper/lower electrode, co-sintering.
Two-sided PERC battery due to two sides will light power generation, two-sided all to there are problems that PID, theoretically, positive PID is asked
The solution by mature common single side battery is inscribed, such as battery front side is aoxidized with Ozonation, is cooperated simultaneously
Common EVA encapsulating film can solve.The back side because the prior art only include aluminum oxide film and silicon nitride film, be do not have it is anti-
PID function, so need to be packaged using POE material, but in actual production, since positive EVA encapsulating film seals
It is different from the POE packaging technology at the back side to fill technique, and encapsulating material is also different, so the two cannot be compatible with, it is two-sided in order to solve
The PID problem of PERC battery, at present can only two sides the PID of two-sided PERC battery is all solved using expensive POE material package film
Problem, such higher cost, and also POE packaging technology is also more complicated.
Summary of the invention
The technical problems to be solved by the present invention are: providing one kind, cost is relatively low and the two-sided PERC of anti-PID of simple process
The preparation method of solar cell.
The technical scheme adopted by the invention is that: a kind of preparation method of the anti-two-sided PERC solar cell of PID, it includes back
Surface treatment technique, the back side process technique include the following steps.
S1, backside deposition aluminum oxide film；
S2, backside deposition silicon oxynitride film；
S3, backside deposition silicon nitride film.
Preferably, the raw material of step S2 depositing silicon oxy-nitride is NH3、SiH4、N2O, wherein NH3With SiH4Gas stream
Amount ratio is 0.7-1.8；NH3With N2The gas flow ratio of O is 1-10.
Preferably, NH3Gas flow be 600sccm；SiH4Gas flow be 1000sccm；N2The gas flow of O
For 600sccm.
Preferably, the sedimentation time of step S2 is 160-220 seconds, the sedimentation time of step S3 is 480-660 seconds.
Preferably, the ratio between the thickness and the thickness of silicon oxynitride film of the silicon nitride film are 2.5-3.5.
Preferably, the silicon oxynitride film with a thickness of 20-30nm.
Using above method compared with prior art, the invention has the following advantages that since silicon oxynitride film compares cause
Close, good chemical stability and very strong anti-impurity diffusion and steam penetrating power can effectively solve the problems, such as PID, while nitrogen
The passivation effect of SiClx and silicon oxynitride duplicature is more preferable, can promote efficiency of solar cell, so there is no need to adopt in technique
Anti- PID is realized with POE technique, and can use EVA technique identical with battery front side, cost is relatively low in this way, and
Technics comparing is simple.
Set the flow proportional of three kinds of air-flows in depositing silicon oxynitride silicon thin film, so that the silicon oxynitride deposited
Film performance is preferable.
And by the sedimentation time of silicon oxynitride and silicon nitride set, so first needed for time and original time phase
Seemingly, i.e., production efficiency will not be reduced, but because packaging technology becomes simple, whole production efficiency is improved,
And because set sedimentation time, so that obtained silicon oxynitride film with a thickness of 20-30nm, silicon nitride film
With a thickness of 60-90nm, so that obtained cell backside thickness is also similar to original battery.
Specific embodiment
The present invention is described further below by way of specific embodiment, but the present invention is not limited only in detail below in fact
Apply mode.
A kind of preparation method of the two-sided PERC solar cell of anti-PID, it includes the following steps.
(1), silicon wafer is cut, and material prepares；
(2), damaging layer is removed；
(3), making herbs into wool；
(4), diffusion；
(5), etching edge and cleaning；
(6), front cvd nitride silicon thin film；
(7), backside deposition aluminum oxide film；
(8), backside deposition silicon oxynitride film；
(9), backside deposition silicon nitride film；
(10), the back side carries out laser slotting；
(11), silk-screen printing upper/lower electrode；
(12), cofiring forms metal contact.
Wherein when step (8) backside deposition silicon oxynitride film, NH is set3With SiH4Gas flow ratio be 0.7-
1.8；NH3With N2The gas flow ratio of O is 1-10, and NH3Gas flow be 600sccm；SiH4Gas flow be
1000sccm；N2The gas flow of O is 600sccm, and sedimentation time is 160-220 seconds.
And the technique of other steps is same as the prior art, only, the sedimentation time of step (9) needs to adjust, and is adjusted to
480-660 seconds, sedimentation time whole in this way with it is original similar, and because provided with sedimentation time, obtained entirety
Thickness is also similar with original battery, i.e., silicon oxynitride film is with a thickness of 20-30nm, and silicon nitride film is with a thickness of 60-90nm.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of skill in the art that it still can be right
Technical solution documented by previous embodiment is modified, or is replaced on an equal basis to part of technical characteristic；And these
It modifies or replaces, the essence of corresponding technical solution is not made to be detached from the spirit and model of technical solution of various embodiments of the present invention
It encloses.
Claims (6)
1. a kind of preparation method of the two-sided PERC solar cell of anti-PID, which is characterized in that it includes back side process technique, described
Back side process technique the following steps are included:
S1, backside deposition aluminum oxide film；
S2, backside deposition silicon oxynitride film；
S3, backside deposition silicon nitride film.
2. a kind of preparation method of anti-two-sided PERC solar cell of PID according to claim 1, it is characterised in that: step
The raw material of S2 depositing silicon oxy-nitride is NH3、SiH4、N2O, wherein NH3With SiH4Gas flow ratio be 0.7-1.8；NH3With
N2The gas flow ratio of O is 1-10.
3. a kind of preparation method of anti-two-sided PERC solar cell of PID according to claim 1, it is characterised in that: NH3's
Gas flow is 600sccm；SiH4Gas flow be 1000sccm；N2The gas flow of O is 600sccm.
4. a kind of preparation method of anti-two-sided PERC solar cell of PID according to claim 1, it is characterised in that: step
The sedimentation time of S2 is 160-220 seconds, and the sedimentation time of step S3 is 480-660 seconds.
5. a kind of preparation method of anti-two-sided PERC solar cell of PID according to claim 1, it is characterised in that: described
The ratio between thickness and the thickness of silicon oxynitride film of silicon nitride film are 2.5-3.5.
6. a kind of preparation method of anti-two-sided PERC solar cell of PID according to claim 1, it is characterised in that: described
Silicon oxynitride film with a thickness of 20-30nm.
Priority Applications (1)
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| CN201810966040.XA CN109148613A (en) | 2018-08-23 | 2018-08-23 | A kind of preparation method of the two-sided PERC solar cell of anti-PID |
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| CN201810966040.XA CN109148613A (en) | 2018-08-23 | 2018-08-23 | A kind of preparation method of the two-sided PERC solar cell of anti-PID |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491954A (en) * | 2019-09-20 | 2019-11-22 | 浙江晶科能源有限公司 | A kind of solar battery and its manufacturing method, a kind of photovoltaic module |
| CN110965044A (en) * | 2019-09-09 | 2020-04-07 | 浙江爱旭太阳能科技有限公司 | Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof |
| CN112481600A (en) * | 2019-08-23 | 2021-03-12 | 中国电子科技集团公司第四十八研究所 | Method for depositing double-sided PERC battery back film by using flat-plate type PECVD equipment |
| CN113078222A (en) * | 2021-03-29 | 2021-07-06 | 横店集团东磁股份有限公司 | Double-sided solar cell and preparation method thereof |
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Cited By (5)
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| CN112481600A (en) * | 2019-08-23 | 2021-03-12 | 中国电子科技集团公司第四十八研究所 | Method for depositing double-sided PERC battery back film by using flat-plate type PECVD equipment |
| CN110965044A (en) * | 2019-09-09 | 2020-04-07 | 浙江爱旭太阳能科技有限公司 | Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof |
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| CN113078222A (en) * | 2021-03-29 | 2021-07-06 | 横店集团东磁股份有限公司 | Double-sided solar cell and preparation method thereof |
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| CB02 | Change of applicant information |
Address after: No. 181-197, Shanshan Road, Wangchun Industrial Park, Haishu District, Ningbo City, Zhejiang Province, 315177 Applicant after: Ningbo Eureka solar energy Co., Ltd Address before: Haishu District Zhejiang city Ningbo province 315177 Wang Shanshan Lu Chun Industrial Park No. 181 Applicant before: NINGBO ULICA SOLAR TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Application publication date: 20190104 |
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