CN104762610A - PECVD film coating method - Google Patents
PECVD film coating method Download PDFInfo
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- CN104762610A CN104762610A CN201510023807.1A CN201510023807A CN104762610A CN 104762610 A CN104762610 A CN 104762610A CN 201510023807 A CN201510023807 A CN 201510023807A CN 104762610 A CN104762610 A CN 104762610A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PECVD film coating method capable of reducing solar cell module packaging loss. The PECVD film coating method is characterized in that by a conventional crystalline silicon solar cell manufacturing technology, based on arrangement of a N2O gas passage on conventional PECVD equipment, an antireflection film containing SiO2 and SiNx is deposited on PECVD, and the film coating method comprises 1, SiO2 layer deposition: under the conditions of a certain pressure and power, feeding 4200-10800sccm of SiH4, NH3 and N2O into equipment and carrying out deposition for some time, and 2, SiNx layer deposition: carrying out two-step deposition to obtain a first SiNx layer and a second SiNx layer, under conditions of the same certain pressure and power, feeding different flows of SiH4 and NH3 into the equipment and carrying out deposition for some time. The PECVD film coating method has the advantages that based on arrangement of the N2O gas passage on the conventional PECVD equipment, the antireflection film containing SiO2 and SiNx is deposited on PECVD, through control of thickness and refractive indexes of the two films, light absorption is improved, and through use of SiO2 physical stability, electricity loss is reduced, module packaging loss is reduced, a production cost is not increased and feasibility is high.
Description
Technical field
The present invention relates to high performance solar batteries assembly correlative technology field, refer in particular to a kind of PECVD film coating method that can reduce solar module encapsulation loss.
Background technology
Up to the present, cost of electricity-generating has become the principal element of restriction photovoltaic generation development in crystal silicon solar batteries technical development.Reduce production cost, substitute efficiency battery with high-efficiency battery and obtain the hot topic that the more energy is scientific research always.Efficient single crystal battery technical study in recent years obtains great achievement, at the high-efficiency battery transformation efficiency of the U.S., Germany and Japanese goods more than 20%.Current achievement in research shows that the reason of the transformation efficiency affecting efficient crystal silicon solar batteries mainly comes from two aspects: 1, optical loss, comprise battery front surface reflection loss, the shadow loss of contact grid line, the loss of light wave subband non-absorbing, wherein reflection and shadow loss can be reduced by technique means, and the loss of optical band non-absorbing is relevant with the character of semi-conductor; 2, electricity loss, it comprises body resistance, the Metal-Semiconductor Contact Resistance loss of photo-generated carrier compound, semi-conductor and metal grid lines in semiconductor surface and body, ohmic resistance reduces than being easier to technically, wherein it is crucial that reduce the compound of photo-generated carrier.In sum: the key improving the transformation efficiency of battery is exactly: 1. the reflection and the shadow loss that reduce light; 2. reduce the compound of photo-generated carrier.
At present SiN:H film and SiO are mainly contained to the surface passivation of crystal silicon solar batteries
2film 2 kinds of passivating techniques.SiN:H film passivation Si-H key under annealing process and assembly uviolizing that conventional crystal silicon solar adopts is easy to fracture and causes H effusion that surface passivation effect is deteriorated.And at high temperature at silicon chip surface heat growth one deck SiO
2film, because silicon-dioxide mates with silicon interface place Si-O valence link, interfacial state can reduce a lot, but because heat growth silicon dioxide is a kind of pyroprocess, the temperature of usual passivation is more than 900 DEG C, and high temperature easily makes silicon inside produce defect, causes the decline of wafer bulk minority carrier life time.
Summary of the invention
There is above-mentioned deficiency to overcome in prior art in the present invention, provides a kind of PECVD film coating method that can reduce solar module encapsulation loss.
To achieve these goals, the present invention is by the following technical solutions:
A kind of PECVD film coating method, adopts conventional crystal silicon solar batteries manufacturing technology, sets up N to conventional PECVD device
2on the basis of O gas circuit, deposit " SiO at PECVD
2+ SiNx " antireflective coating, concrete film coating method is as follows:
(1) SiO is deposited
2layer: under certain pressure and power, pass into the SiH that total flux is 4200-10800sccm
4, NH
3and N
2o gas, deposition certain hour;
(2) deposit SiNx layer: deposit at twice, form the first layer SiNx and second layer SiNx respectively, respectively under identical pressure and power, pass into the SiH of different flow
4and NH
3gas, deposition certain hour.
Show according to the study SiO
2+ SiNx film and SiNx film test the minority carrier life time of two kinds of films at 600-900 DEG C after quick high-temp annealing, the maximum minority carrier life time of SiNx film only has 16us, and " SiO
2+ SiNx " the maximum minority carrier life time of film at more than 27us, " SiO
2+ SiNx " film Heat stability is good, passivation effect is stablized, and minority carrier life time is high.SiO
2the specific refractory power of film and SiNx film is respectively 1.6 and about 2.1, because two kinds of specific refractory poweres have larger difference, by controlling thickness and the specific refractory power of two kinds of films, form high level matches with low level, reach the low 0.5%-1% of reflectivity to spectrum medium wavelength 300-1200um, photoabsorption is significantly improved.
" SiO involved in the present invention
2+ SiNx " coating technique setting up N to conventional PECVD device
2on the basis of O gas circuit, adopt conventional crystal silicon solar batteries manufacturing technology, deposit " SiO at PECVD
2+ SiNx " antireflective coating, by controlling thickness and the specific refractory power of two kinds of films, making it to improve photoabsorption, utilizing SiO
2physical stability, reduces electricity loss, reduces component package loss.And the present invention does not increase production cost, be easy to realize.
As preferably, in step (1), SiH
4gas flow is 200-800sccm, NH
3gas flow is 2000-5000sccm, N
2o gas flow is 2000-5000sccm, and pressure is 1500-2000mtor, and power is 3000-5000W; Depositing time is 30-300s.SiO
2film thickness and specific refractory power be according to NH
3, SiH
4, N
2the throughput ratio of O, radio frequency power, wave packet on-off ratio and plated film time are determined, utilize SiO
2physical stability, reduces electricity loss, reduces component package loss.
As preferably, in step (2), during deposition the first layer SiNx, SiH
4gas flow is 500-1000sccm, NH
3gas flow is 4000-8000sccm, and total gas flow rate is 4500-9000sccm, and pressure is 1500-2000mtor, and power is 3000-6000W, and depositing time is 100-300s.The film thickness of the first layer SiNx and specific refractory power are according to NH
3, SiH
4throughput ratio, radio frequency power, wave packet on-off ratio and plated film time determine, by with SiO
2cooperation, make it improve to photoabsorption, reduce component package loss.
As preferably, in step (2), during deposition second layer SiNx, SiH
4gas flow is 400-800sccm, NH
3gas flow is 3000-8000sccm, and total gas flow rate is 3400-8800sccm, and pressure is 1500-2000mtor, and power is 3000-6000W, and depositing time is 500-700s.The film thickness of second layer SiNx and specific refractory power are according to NH
3, SiH
4throughput ratio, radio frequency power, wave packet on-off ratio and plated film time determine, by with SiO
2cooperation, make it improve to photoabsorption, reduce component package loss.
The invention has the beneficial effects as follows: N is being set up to conventional PECVD device
2on the basis of O gas circuit, deposition " SiO
2+ SiNx " antireflective coating, by controlling thickness and the specific refractory power of two kinds of films, making it to improve photoabsorption, utilizing SiO
2physical stability, reduces electricity loss, reduces component package loss, does not increase production cost, is easy to realize.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1:
125mm × 125mm monocrystalline silicon piece, adopt common process making herbs into wool, diffusion remove phosphorosilicate glass through over etching, antireflective coating adopts SiO
2+ SiNx coating process: first deposit SiO
2layer: depositing time 50s, SiH
4flow 300sccm, NH
3flow 2500sccm, N
2o flow 2500sccm, pressure 1500mtor, power 3000W; Deposit the first layer SiNx again: depositing time 170s, SiH
4flow 700sccm, NH
3flow 4300sccm, pressure 1700mtor, power 3000W; Deposit second layer SiNx again: depositing time 600s, SiH
4flow 450sccm, NH
3flow 4500sccm, pressure 1700mtor, power 4000W.After plated film completes, print electrode and test electrical property, selecting the battery sheet packaging of homochromy same shelves to become module testing electrical property.The encapsulation loss of cell piece assembly is as shown in table 1.
Embodiment 2:
125mm × 125mm monocrystalline silicon piece, adopt common process making herbs into wool, diffusion remove phosphorosilicate glass through over etching, antireflective coating adopts SiO
2+ SiNx coating process: first deposit SiO
2layer: depositing time 80s, SiH
4flow 300sccm, NH
3flow 2500sccm, N
2o flow 2500sccm, pressure 1500mtor, power 3000W; Deposit the first layer SiNx again: depositing time 170s, SiH
4flow 700sccm, NH
3flow 4300sccm, pressure 1700mtor, power 3000W; Deposit second layer SiNx again: depositing time 540s, SiH4 flow 450sccm, NH
3flow 4500sccm, pressure 1700mtor, power 4000W.After plated film completes, print electrode and test electrical property, selecting the battery sheet packaging of homochromy same shelves to become module testing electrical property.The encapsulation loss of cell piece assembly is as shown in table 1.
Embodiment 3:
125mm × 125mm monocrystalline silicon piece, adopt normal process making herbs into wool, diffusion remove phosphorosilicate glass through over etching, antireflective coating adopts SiO
2+ SiNx coating process: first deposit SiO
2layer: depositing time 110s, SiH
4flow 200sccm, NH
3flow 3500sccm, N
2o flow 2500sccm, pressure 1500mtor, power 3000W; Deposit the first layer SiNx again: depositing time 170s, SiH
4flow 700sccm, NH
3flow 4300sccm, pressure 1700mtor, power 3000W; Deposit second layer SiNx again: depositing time 600s, SiH
4flow 450sccm, NH
3flow 4500sccm, pressure 1700mtor, power 4000W.After plated film completes, print electrode and test electrical property, selecting the battery sheet packaging of homochromy same shelves to become module testing electrical property.The encapsulation loss of cell piece assembly is as shown in table 1.
Table 1
As shown in table 1, compared by conventional scheme and embodiment 1-3, can learn and set up N in PECVD operation
2o gas circuit, by adjustment NH
3, SiH
4, N
2the throughput ratio of O, radio frequency power, wave packet on-off ratio and plated film time, control " the SiO of deposition
2+ SiNx " film thickness of antireflective coating and specific refractory power, make it the light reflectance reached spectrum medium wavelength 300-1200um and reduce 0.5%-1%, make it to improve photoabsorption, utilize SiO
2physical stability, reduces electricity loss, effectively reduces the encapsulation loss of assembly.
Claims (4)
1. a PECVD film coating method, is characterized in that, adopts conventional crystal silicon solar batteries manufacturing technology, sets up N to conventional PECVD device
2on the basis of O gas circuit, deposit " SiO at PECVD
2+ SiNx " antireflective coating, concrete film coating method is as follows:
(1) SiO is deposited
2layer: under certain pressure and power, pass into the SiH that total flux is 4200-10800sccm
4, NH
3and N
2o gas, deposition certain hour;
(2) deposit SiNx layer: deposit at twice, form the first layer SiNx and second layer SiNx respectively, respectively under identical pressure and power, pass into the SiH of different flow
4and NH
3gas, deposition certain hour.
2. a kind of PECVD film coating method according to claim 1, is characterized in that, in step (1), and SiH
4gas flow is 200-800sccm, NH
3gas flow is 2000-5000sccm, N
2o gas flow is 2000-5000sccm, and pressure is 1500-2000 mtor, and power is 3000-5000 W; Depositing time is 30-300s.
3. a kind of PECVD film coating method according to claim 1, is characterized in that, in step (2), during deposition the first layer SiNx, and SiH
4gas flow is 500-1000sccm, NH
3gas flow is 4000-8000sccm, and total gas flow rate is 4500-9000sccm, and pressure is 1500-2000 mtor, and power is 3000-6000 W, and depositing time is 100-300s.
4. a kind of PECVD film coating method according to claim 1 or 3, is characterized in that, in step (2), during deposition second layer SiNx, and SiH
4gas flow is 400-800sccm, NH
3gas flow is 3000-8000sccm, and total gas flow rate is 3400-8800sccm, and pressure is 1500-2000 mtor, and power is 3000-6000 W, and depositing time is 500-700s.
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|---|---|---|---|
| CN201510023807.1A CN104762610A (en) | 2015-01-16 | 2015-01-16 | PECVD film coating method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510023807.1A CN104762610A (en) | 2015-01-16 | 2015-01-16 | PECVD film coating method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338424A (en) * | 2017-08-07 | 2017-11-10 | 苏州阿特斯阳光电力科技有限公司 | A kind of gas control method and equipment of PECVD plated films |
| CN108588676A (en) * | 2018-04-26 | 2018-09-28 | 维科诚（苏州）光伏科技有限公司 | A kind of solar battery antireflective film and preparation method thereof |
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| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN103413840A (en) * | 2013-08-14 | 2013-11-27 | 中节能太阳能科技（镇江）有限公司 | Crystalline silicon solar cell resisting to PID effect and manufacturing method thereof |
| CN103700714A (en) * | 2013-12-24 | 2014-04-02 | 江苏顺风光电科技有限公司 | High-efficiency PID (Potential Included Degradation) Free solar single crystal silicon cell passivation antireflection film |
| CN103928535A (en) * | 2014-04-25 | 2014-07-16 | 中利腾晖光伏科技有限公司 | PID resistance crystalline silicon battery and preparation method thereof |
| CN104064622A (en) * | 2013-03-21 | 2014-09-24 | 晶科能源有限公司 | Solar energy battery resisting potential-induced attenuation and manufacture method thereof |
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Patent Citations (5)
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| CN104064622A (en) * | 2013-03-21 | 2014-09-24 | 晶科能源有限公司 | Solar energy battery resisting potential-induced attenuation and manufacture method thereof |
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN103413840A (en) * | 2013-08-14 | 2013-11-27 | 中节能太阳能科技（镇江）有限公司 | Crystalline silicon solar cell resisting to PID effect and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338424A (en) * | 2017-08-07 | 2017-11-10 | 苏州阿特斯阳光电力科技有限公司 | A kind of gas control method and equipment of PECVD plated films |
| CN107338424B (en) * | 2017-08-07 | 2020-03-03 | 苏州阿特斯阳光电力科技有限公司 | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating |
| CN108588676A (en) * | 2018-04-26 | 2018-09-28 | 维科诚（苏州）光伏科技有限公司 | A kind of solar battery antireflective film and preparation method thereof |
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Application publication date: 20150708 |
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