CN103258695A - Carbon nano tube cold cathode structure - Google Patents
Carbon nano tube cold cathode structure Download PDFInfo
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- CN103258695A CN103258695A CN2013101602884A CN201310160288A CN103258695A CN 103258695 A CN103258695 A CN 103258695A CN 2013101602884 A CN2013101602884 A CN 2013101602884A CN 201310160288 A CN201310160288 A CN 201310160288A CN 103258695 A CN103258695 A CN 103258695A
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- carbon nano
- nano tube
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- tube
- cathode structure
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Abstract
The invention relates to electronic display devices, in particular to a carbon nano tube cold cathode structure. According to the carbon nano tube cold cathode structure, carbon nano tube bundles are adhered to a cathode electrode through a screen printing method, the thicknesses of a silk screen are not even, and therefore the carbon nano tube bundles with different heights are produced and are vertically arranged on the upper surface of the cathode electrode. In one direction, a height difference exists between adjacent carbon nano tube bundles, and a sine ripple shape is formed at the top end of a carbon nano tube bundle array model. According to the carbon nano tube bundle model, a structure formed by an insulating layer and a grid electrode is fixed at a trough position formed by the carbon nano tube bundles, and is vertically fixed on the upper surface of the cathode electrode. The carbon nano tube cold cathode structure has the advantages that due to the fact that the simple and effective method of the changes of the height distribution at the tip end of the carbon nano tube bundles is adopted, loss caused by an electromagnetic shielding effect is reduced, and emitting efficiency of a carbon nano tube bundle field is improved.
Description
Technical field:
The present invention relates to electron display device, particularly a kind of carbon nano-tube cold cathode structure.
Background technology:
Silk screen printing originates from China, so far existing bimillennial history.Since the seventies in 20th century, along with science and technology development, the application of silk screen printing is increasingly extensive, and is penetrated into the analytical chemistry field gradually, becomes a kind of important method of preparation film microelectrode.The basic principle of silk screen printing is: the part mesh of screen printing forme can see through printing ink, on the stock processed of biting; And the mesh of remainder blocks, and can not see through printing ink, forms blank at stock.Because the screen printing technique equipment needed thereby is simple, invest for a short time, can prepare the advantage of cheap disposable microelectrode.
Carbon nano-tube is a kind of very good field emmision material.The characteristics that it has that cut-in voltage is low, draw ratio is big, stability is high just can be launched electronics under lower voltage, and stand bigger electric current for a long time and also be not easy destroyedly, are well suited for for flat-panel monitor.
The carbon nano-tube field emission performance is mainly reflected in most advanced and sophisticated emission of carbon nano-tube, and the most advanced and sophisticated density of carbon nano-tube electromagnetic-field-shielded phenomenon will occur when excessive, causes an influence emission.Chinese invention patent CN102324351A discloses extremely manufacture method of a kind of novel carbon nanotube field transmitting cold-cathode, this method is creationary to have proposed to adopt micro-processing technology to produce stereo microstructure on the surface of carbon nano tube growth, make carbon nano tube growth in stereo microstructure surface substrate, the carbon nano-tube top of Xing Chenging has reduced the most advanced and sophisticated density of carbon nano-tube and electromagnetic-field-shielded phenomenon will occur when excessive not at grade like this.
Summary of the invention:
The present invention be directed to the excessive problem of the most advanced and sophisticated density of carbon nano-tube, proposed a kind of novel carbon nano-tube cold cathode structure and manufacture method thereof, can improve carbon nano-tube bundle field emission effciency, reduce because the loss that the electromagnetic shielding effect produces.Because carbon nanotube film is subjected to the influence of working condition to be difficult to accomplish that area stable grows on the metal function aspect, therefore, adopt the method for carbon nano-tube silk screen printing can not be subjected to the influence of cathode area size, reduce production costs.
A kind of carbon nano-tube cold cathode structure, wherein: use method for printing screen to adhere to carbon nano-tube bundle at negative electrode, used screen thickness is inhomogeneous, produces the carbon nano-tube bundle vertical arrangement of differing heights thus at the negative electrode upper surface.
Described a kind of carbon nano-tube cold cathode structure, wherein: on single direction, there is difference in height in the adjacent carbons nanotube bundle, and carbon nano-tube bundle Array Model top forms the sine bellows shape.
Described model, wherein: the structure that insulating barrier and grid are formed is fixed on the wave trough position that carbon nano-tube bundle forms, and vertical fixing is in the negative electrode upper surface.
The invention has the beneficial effects as follows: by carbon nano-tube bundle tip height changes in distribution, this simple effective method reduces because the loss that the electromagnetic shielding effect produces improves carbon nano-tube bundle field emission effciency.
Description of drawings:
Fig. 1 is carbon nano-tube cold cathode silk screen printing structural representation.
Fig. 2 is carbon nano-tube cold cathode array structure schematic diagram
Specific embodiments:
Describe embodiment of the present invention in conjunction with the drawings in detail, it is clearer that operation principle of the present invention and advantage will become, shown in each figure.
Carbon nano-tube cold cathode silk screen printing structural representation of the present invention as shown in Figure 1.This device comprises anode 1 for secondary structure, insulation column 2 and silicon chip substrate 4.At first select for use silicon chip as substrate, by organic solvent cleaning substrate surface, remove surface moisture through low-temperature bake.Make conduction bottom electrode layer 5 in silicon chip substrate 4.Silicon chip substrate 4 and bottom electrode layer 5 are formed negative electrode.By wave silk screen 3, the carbon nano-tube slurry that configures is printed on the bottom electrode layer 5.
Shown in Fig. 2 carbon nano-tube cold cathode array structure schematic diagram, this device comprises anode 1 for tertiary structure, insulation column 2 and silicon chip substrate 4 and bottom electrode layer 5.The carbon nano-tube slurry that prints through high temperature sintering, is vertically fixed on the bottom electrode layer 5 carbon nano-tube bundle 3.Insulating barrier 6 is fixed on the wave trough position that does not have printed carbon nanotube bundle 3, at insulating barrier 6 grid 7 is installed.
Claims (3)
1. carbon nano-tube cold cathode structure is characterized in that: use method for printing screen to adhere to carbon nano-tube bundle (3) at negative electrode, used screen thickness is inhomogeneous, produces carbon nano-tube bundle (3) vertical arrangement of differing heights thus at the negative electrode upper surface.
2. according to the described a kind of carbon nano-tube cold cathode structure of claim 1, it is characterized in that: on single direction, there is difference in height in adjacent carbons nanotube bundle (3), and carbon nano-tube bundle (3) Array Model top forms the sine bellows shape.
3. according to claim 1 or the described model of claim 2, it is characterized in that: insulating barrier (6) is fixed on the wave trough position that carbon nano-tube bundle (3) forms with the structure that grid (7) is formed, and vertical fixing is in the negative electrode upper surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310160288.4A CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310160288.4A CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103258695A true CN103258695A (en) | 2013-08-21 |
| CN103258695B CN103258695B (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310160288.4A Expired - Fee Related CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
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| CN (1) | CN103258695B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108715098A (en) * | 2018-04-04 | 2018-10-30 | 上海敏孑图文设计事务所（有限合伙） | A kind of colored marking printing technology of silk ribbon |
| CN112242280A (en) * | 2019-07-16 | 2021-01-19 | 清华大学 | Carbon nanotube field emitter and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197752A1 (en) * | 1999-05-24 | 2002-12-26 | Choi Won-Bong | Carbon nanotube field emission array and method for fabricating the same |
| US20080018228A1 (en) * | 2005-10-31 | 2008-01-24 | Samsung Sdi Co., Ltd. | Electronic emission device, electron emission display device having the same, and method of manufacturing the electron emission device |
| CN101593649A (en) * | 2009-05-22 | 2009-12-02 | 彩虹集团公司 | A kind of carbon nanotube electron emitter and preparation method thereof |
| CN102476922A (en) * | 2010-11-30 | 2012-05-30 | 上海广电电子股份有限公司 | Production method of printed carbon nanotube |
-
2013
- 2013-04-19 CN CN201310160288.4A patent/CN103258695B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197752A1 (en) * | 1999-05-24 | 2002-12-26 | Choi Won-Bong | Carbon nanotube field emission array and method for fabricating the same |
| US20080018228A1 (en) * | 2005-10-31 | 2008-01-24 | Samsung Sdi Co., Ltd. | Electronic emission device, electron emission display device having the same, and method of manufacturing the electron emission device |
| CN101593649A (en) * | 2009-05-22 | 2009-12-02 | 彩虹集团公司 | A kind of carbon nanotube electron emitter and preparation method thereof |
| CN102476922A (en) * | 2010-11-30 | 2012-05-30 | 上海广电电子股份有限公司 | Production method of printed carbon nanotube |
Non-Patent Citations (1)
| Title |
|---|
| 史永胜 等: "《基于丝网印刷大面积碳纳米管阴极场发射的研究》", 《西安交通大学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108715098A (en) * | 2018-04-04 | 2018-10-30 | 上海敏孑图文设计事务所（有限合伙） | A kind of colored marking printing technology of silk ribbon |
| CN112242280A (en) * | 2019-07-16 | 2021-01-19 | 清华大学 | Carbon nanotube field emitter and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN103258695B (en) | 2016-09-07 |
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Granted publication date: 20160907 Termination date: 20170419 |
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