CN103258695B - A kind of carbon nano tube cold cathode structure - Google Patents
A kind of carbon nano tube cold cathode structure Download PDFInfo
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- CN103258695B CN103258695B CN201310160288.4A CN201310160288A CN103258695B CN 103258695 B CN103258695 B CN 103258695B CN 201310160288 A CN201310160288 A CN 201310160288A CN 103258695 B CN103258695 B CN 103258695B
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- carbon nano
- tube bundle
- cold cathode
- tube
- cathode structure
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Abstract
The present invention relates to electron display device, particularly a kind of carbon nano tube cold cathode structure.A kind of carbon nano tube cold cathode structure of the present invention, wherein, uses method for printing screen to adhere to carbon nano-tube bundle on negative electrode, and screen thickness used is uneven, and the carbon nano-tube bundle thus producing differing heights is arranged vertically at negative electrode upper surface.Described a kind of carbon nano tube cold cathode structure, wherein, in a single direction, there is difference in height in adjacent carbon nanotubes bundle, and carbon nano-tube bundle Array Model top forms sine bellows shape.Described model, wherein, insulating barrier is fixed on, with the structure of grid composition, the wave trough position that carbon nano-tube bundle is formed, and is perpendicularly fixed at negative electrode upper surface.The invention has the beneficial effects as follows: by carbon nano-tube bundle tip height changes in distribution, this simple effective method, reduce the loss produced due to electromagnetic shielding effect, improve carbon nano-tube bundle Flied emission efficiency.
Description
Technical field:
The present invention relates to electron display device, particularly a kind of carbon nano tube cold cathode structure.
Background technology:
Serigraphy originates from China, so far existing bimillennial history.Since 20 century 70s, along with section
The development learned a skill, the application of serigraphy is increasingly extensive, and gradually penetrates into analytical chemistry field, becomes system
A kind of important method of standby film microelectrode.The general principle of serigraphy is: the part mesh of screen printing forme
Ink can be passed through, bite on stock processed；And the mesh of remainder blocks, it is impossible to through ink, in printing
Blank is formed on thing.Owing to screen printing technique equipment needed thereby is simple, invest little, can prepare cheap disposable
The advantage of the microelectrode used.
CNT is the most excellent a kind of field emmision material.It has that cut-in voltage is low, draw ratio big,
The feature that stability is high, the most just can launch electronics, and stand bigger electricity for a long time
Stream is also not easy to be destroyed, and is well suited for for flat-panel monitor.
Field Emission of Carbon Nanotubes is mainly reflected in CNT delamination tip-field and launches, CNT tip density
Arise that electromagnetic-field-shielded phenomenon time excessive, cause affecting Flied emission current density.Chinese invention patent
CN102324351A discloses a kind of Novel carbon nano tube field emission cold cathode extremely manufacture method, and the method is created
The employing micro-processing technology that proposes of the property made produces stereo microstructure on the surface of carbon nano tube growth, makes carbon
Nanotube is grown on stereo microstructure surface substrate, and the CNT top so formed is not at same plane
On, reduce CNT tip density excessive time arise that electromagnetic-field-shielded phenomenon.
Summary of the invention:
The present invention be directed to the problem that CNT tip density is excessive, it is proposed that a kind of New Type of Carbon nanotube is cold
Cathode construction and manufacture method thereof, it is possible to increase carbon nano-tube bundle Flied emission efficiency, reduce due to electromagnetic shielding
The loss that effect produces.Owing in metal function aspect, carbon nanotube film is affected very by working condition
Difficulty accomplishes that area stable grows, and therefore, the method using CNT screen printing brush can not be by cathode plane
The impact of long-pending size, reduces production cost.
A kind of carbon nano tube cold cathode structure, wherein: use method for printing screen to adhere to carbon nanometer on negative electrode
Tube bank, screen thickness used is uneven, and the carbon nano-tube bundle thus producing differing heights is arranged vertically at negative electrode
Upper surface.
Described a kind of carbon nano tube cold cathode structure, wherein: in a single direction, adjacent carbon nanotubes bundle is deposited
In difference in height, carbon nano-tube bundle Array Model top forms sine bellows shape.
Described model, wherein: insulating barrier is fixed on, with the structure of grid composition, the trough that carbon nano-tube bundle is formed
Position, is perpendicularly fixed at negative electrode upper surface.
The invention has the beneficial effects as follows: by carbon nano-tube bundle tip height changes in distribution, this is the most effective
Method, reduce due to electromagnetic shielding effect produce loss, improve carbon nano-tube bundle Flied emission efficiency.
Accompanying drawing illustrates:
Fig. 1 is carbon nanotube cold cathode serigraphy structural representation.
Fig. 2 is carbon nanotube cold cathode array structure schematic diagram
Specific embodiments:
By being described with reference to the accompanying drawings embodiment of the present invention, the operation principle of the present invention and advantage will become more
Add clear, as shown in the FIG..
Carbon nanotube cold cathode serigraphy structural representation of the present invention is as shown in Figure 1.This device is secondary structure
Including anode 1, insulation column 2 and silicon chip substrate 4.First select silicon chip as substrate, pass through organic solvent
Cleaning substrate surface, removes surface moisture through low-temperature bake.Silicon chip substrate 4 makes conduction hearth electrode
Layer 5.Silicon chip substrate 4 and bottom electrode layer 5 form negative electrode.By wave silk screen 3, the carbon nanometer that will have configured
Pipe slurry is printed on bottom electrode layer 5.
As shown in Fig. 2 carbon nanotube cold cathode array structure schematic diagram, this device is that tertiary structure includes anode 1,
Insulation column 2 and silicon chip substrate 4 and bottom electrode layer 5.The carbon nano tube paste printed, through high temperature sintering,
Carbon nano-tube bundle 3 is made to be vertically fixed on bottom electrode layer 5.Insulating barrier 6 is fixed on and does not print carbon nanometer
The wave trough position of tube bank 3, installs grid 7 on insulating barrier 6.
Claims (1)
1. a carbon nano tube cold cathode structure, it is characterised in that: use method for printing screen to adhere on negative electrode
Carbon nano-tube bundle (3), screen thickness used is uneven, thus produces the carbon nano-tube bundle (3) of differing heights
Arranged vertically at negative electrode upper surface, in a single direction, there is difference in height, carbon in adjacent carbon nanotubes bundle (3)
Nanotube bundle (3) Array Model top forms sine bellows shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310160288.4A CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310160288.4A CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103258695A CN103258695A (en) | 2013-08-21 |
| CN103258695B true CN103258695B (en) | 2016-09-07 |
Family
ID=48962547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310160288.4A Expired - Fee Related CN103258695B (en) | 2013-04-19 | 2013-04-19 | A kind of carbon nano tube cold cathode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103258695B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108715098B (en) * | 2018-04-04 | 2020-10-23 | 上海敏孑图文设计事务所（有限合伙） | Color mark printing process for silk ribbon |
| CN112242280B (en) * | 2019-07-16 | 2022-03-22 | 清华大学 | Carbon nanotube field emitter and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000074609A (en) * | 1999-05-24 | 2000-12-15 | 김순택 | Carbon nano tube field emission array and fabricating method thereof |
| KR20070046602A (en) * | 2005-10-31 | 2007-05-03 | 삼성에스디아이 주식회사 | Electron emission device, electron emission display apparatus having the same, and method of manufacturing the same |
| CN101593649B (en) * | 2009-05-22 | 2012-03-21 | 彩虹集团公司 | Carbon nanotube electron emitter and preparation method thereof |
| CN102476922A (en) * | 2010-11-30 | 2012-05-30 | 上海广电电子股份有限公司 | Production method of printed carbon nanotube |
-
2013
- 2013-04-19 CN CN201310160288.4A patent/CN103258695B/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN103258695A (en) | 2013-08-21 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20170419 |
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| CF01 | Termination of patent right due to non-payment of annual fee |