CN108269728A - Capacitance coupling plasma processing unit and method of plasma processing - Google Patents
Capacitance coupling plasma processing unit and method of plasma processing Download PDFInfo
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- CN108269728A CN108269728A CN201611254798.8A CN201611254798A CN108269728A CN 108269728 A CN108269728 A CN 108269728A CN 201611254798 A CN201611254798 A CN 201611254798A CN 108269728 A CN108269728 A CN 108269728A
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- plasma processing
- processing unit
- annular element
- capacitance coupling
- coupling plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
Abstract
The present invention relates to a kind of capacitance coupling plasma processing unit and corresponding method of plasma processing, for improving the uniformity of substrate etching.Wherein, processing unit includes：The top electrode that is oppositely arranged and lower electrode are processing region between the upper and lower electrode；Radio frequency power source；Bias power source is applied to the lower electrode；Annular element, around the lower electrode setting, the annular element is along the circumferential direction divided at least two parts, and each section is grounded by an impedance regulating.
Description
Technical field
The present invention relates to for processing the capacitance coupling plasma of semiconductor devices (Capacitively Coupled
Plasma) processing unit such as capacitance coupling plasma etching device, further relates to utilize above device processing semiconductor devices
Method.
Background technology
In the manufacturing process of semiconductor devices, in order in the regulation of the semiconductor die on piece formation as pending substrate
Predetermined pattern is formed on layer, uses the plasma etching performed etching using resist as mask, using plasma mostly
Processing.As for carrying out the plasma etching apparatus of such plasma etching, using various devices, wherein, mainstream
For capacitive coupling plasma processing apparatus.
In capacitive coupling plasma etching device, be configured in chamber a pair of parallel plate electrode (top electrode and
Lower electrode), apply high frequency by processing gas introduction chamber room, and to an electrode, high-frequency electric field is formed between electrode, is utilized
The high-frequency electric field forms the plasma of processing gas, and plasma etching is carried out to the specified layer of semiconductor wafer.
Specifically, it is known to which upward electrode applies the high frequency of plasma formation to form plasma, downwards electricity
Pole applies the high frequency of ion introducing, and the plasma etching apparatus of appropriate plasmoid is consequently formed, thereby, it is possible to
The high etching processing (for example, United States Patent (USP) US6423242) of reproducibility is carried out with high selectivity.
But existing capacitance coupling plasma processing unit still has improvement space, particularly in process uniformity side
Face.By taking plasma etching apparatus as an example, due to the element (substrate transfer as being located at reaction chamber side wall in existing etching device
Door, positioned at exhaust outlet of reaction chamber bottom etc.) geometry is asymmetric, Temperature Distribution is or not element (such as electrostatic chuck, focusing ring)
Uniformity and element electrical performance inhomogeneities etc. can influence cause to etch it is uneven, and then to properties of product and good
Rate has a huge impact, and there is an urgent need for be resolved.In addition, the having differences property of reaction cavity configuration of different etching device, causes to carve
Etching technique degree of irregularity is also different.Therefore, there is an urgent need for one kind (not to be temporarily released from one's regular work, realize adjust in process) online
The device or means actively continuously adjusted, utmostly to weaken the inhomogeneities of processing technology.
Invention content
According to an aspect of the present invention, a kind of capacitance coupling plasma processing unit is provided, including：
Reaction chamber is provided with roof, side wall and bottom wall；
Top electrode in the reaction chamber, is arranged on the roof；
Lower electrode is oppositely arranged in the reaction chamber, and with the top electrode；
Radio frequency power source is applied to the lower electrode；
Bias power source is applied to the lower electrode；
Annular element around the lower electrode setting, and can move up and down；The annular element is along the circumferential direction divided at least
Two parts, each section are electrically connected to the top electrode.
Optionally, each section of the annular element is electrically connected with the top electrode by an impedance regulating.
Optionally, the impedance regulating includes a variometer or a variable resistance or a variable capacitance.
Optionally, the impedance regulating includes arbitrary two kinds in variometer, variable resistance and variable capacitance,
Or include variometer, variable resistance and variable capacitance simultaneously.
Optionally, the material of the annular element includes silicon.
Optionally, the top electrode ground connection.
According to another aspect of the present invention, a kind of capacitance coupling plasma processing unit is provided, including：
The top electrode that is oppositely arranged and lower electrode are processing region P between the upper and lower electrode；
Radio frequency power source；
Bias power source is applied to the lower electrode；
Annular element, around the lower electrode setting, the annular element is along the circumferential direction divided at least two parts, each
Part is grounded by an impedance regulating.
Optionally, the impedance regulating includes a variometer or a variable resistance or a variable capacitance.
Optionally, the impedance regulating includes arbitrary two kinds in variometer, variable resistance and variable capacitance,
Or include variometer, variable resistance and variable capacitance simultaneously.
Optionally, the material of the annular element includes silicon.
According to another aspect of the present invention, a kind of method of plasma processing is provided, including：
Pending substrate is put into foregoing capacitance coupling plasma processing unit, and adjusts each impedance and adjusts
Device；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is processed.
Description of the drawings
Fig. 1 is the structure diagram of the capacitance coupling plasma processing unit of one embodiment of the invention；
Fig. 2 is the structure diagram of another embodiment of annular element；
Fig. 3 is the change embodiment of annular element in Fig. 2.
Specific embodiment
Below in conjunction with specific embodiment and attached drawing, capacitance coupling plasma processing unit of the present invention and method are said
It is bright.It is emphasized that only it is the elaboration of exemplary type here, however not excluded that have other utilization embodiments of the present invention.
Inventor is the study found that (it is arranged on substrate using the annular element (especially removable annular element) of dead ground
Periphery, the fringe region of adjacent substrate) can effectively promote the processing speed (for example, etch rate) of substrate edge, utilize this
Process uniformity can be significantly improved.The mode of ground connection can be that annular element is directly electrically connected to ground or by by ring
Shape part is electrically connected to the top electrode that has been grounded to realize.Further, if the ground connection degree to annular element (hinders in other words
Anti-, i.e. impedance between annular element and ground) be adjusted (specifically can be arbitrary by resistance or inductively or capacitively or between them
Combination regulates and controls the ground connection degree of annular element), then substrate edge processing speed can be continuously adjusted and be controlled, and then
Realize the on-line control to process uniformity.This regulating system has differential responses chamber and different plasma treatment process
General applicability.
More preferably mode is that annular element is divided into multistage and forms multiple (for example, two, three or mores) independently
Module segmental arc (such as semicircular segmental arc, 1/3rd circular arc rings), and to the resistance of each module in other words
Anti- (impedance between i.e. each module and the earth) is independently regulated and controled, then can be to the etch rate of substrate edge different zones
It is continuously adjusted and is controlled, so as to fulfill the first adjusting to etching technics uniformity and symmetry.Impedance mentioned here
Regulation and control, can be the regulation and control to resistance, can be the regulation and control to capacitance, can be regulation and control to inductance or to them
In arbitrary two kinds combination regulation and control, can also be while to the regulation and control of resistance, capacitance and inductance.It need to only use corresponding variable
Resistance, variable capacitance, variometer.
Capacitance coupling plasma processing unit according to the present invention includes being enclosed by multiple walls (such as side wall, roof and bottom wall)
The reaction chamber formed is closed, which usually can be cylinder, and the side wall of reaction chamber can be perpendicular to roof and bottom wall.Reaction chamber
Space is internally provided with, for accommodating substrate.Reaction chamber can be evacuated.Except air inlet, exhaust outlet and substrate access way
Outside, the other parts of reaction chamber keep closed in processing procedure, are isolated from the outside.Air inlet is connected with external air source, uses
In lasting to reaction chamber supplying process gas in processing procedure.Exhaust outlet is connected with external pump, for will be in processing procedure
The exhaust gas discharge reaction chamber of generation, is also used for controlling the air pressure in reaction chamber.
The processing unit further includes the upper and lower electrode being arranged in parallel and the high frequency power source being connected with them (e.g., is penetrated
Frequency power source and bias power source), the energy for exciting plasma and plasma is controlled.In general, powering on
Region between pole and lower electrode is processing region, and the processing region is by high-frequency energy is formed to light and maintain plasma.
Pending substrate may be disposed at the lower section of processing region, which can be to be etched or processing semiconductor chip or treat
It is processed into glass plate of flat-panel monitor etc..Top electrode usually may be configured as a part for gas spray, available for by gas
Body is guided to reaction chamber (especially processing region).Lower electrode usually may be disposed in electrostatic chuck, which can be used
In the substrate placed and fixation/clamping is to be processed.
One or more high frequency power sources can be individually applied to down (including radio frequency power source and bias power source)
Be applied on electrode or simultaneously top electrode on lower electrode, radio-frequency power is transported on lower electrode or top electrode is under
On electrode, so as to generate strong electric field inside reaction chamber.Most of electric field lines are limited between top electrode and lower electrode
In processing region, this electric field accelerates to being present in the electronics inside reaction chamber on a small quantity, is allowed to being inputted by gas spray
Reaction gas gas molecule collision.These collisions lead to the ionization of reaction gas and the excitation of plasma, thus
Plasma is generated in process chambers.The neutral gas molecule of reaction gas loses electronics when being subjected to these highfields, stays
Under positively charged ion.Positively charged ion accelerates towards lower electrode direction, is combined with the neutral substance in processed substrate,
Excite substrate processing, that is, etch, deposit etc..
Fig. 1 is that the capacitance coupling plasma processing unit of one embodiment of the invention (is specially capacitiveiy coupled plasma
Body etching device) structure diagram, be mainly used to show high frequency power (radio-frequency power in other words) transmission in reaction chamber
Path, thus, it does not show less relevant structure (such as roof, bottom wall, air inlet, exhaust outlet, substrate access way).
Such as Fig. 1, parallel top electrode (first electrode) 2 is oppositely arranged with lower electrode (second electrode) 4, upper and lower electrode 2,4
Between for processing region P (excitation generate plasma be mainly concentrated in the space).Top electrode may be generally disposed at instead
Can on the roof (not shown) of chamber or also top electrode be regarded as a part for roof by answering.In addition, top electrode 2 itself can also be seen
Work is a part for gas spray, and the channel of reaction chamber is entered as reaction gas.Lower electrode 4 is generally arranged at electrostatic chuck
On (electrostatic chuck) (part for being considered as electrostatic chuck), and pending substrate (not shown)
The upper surface of electrostatic chuck can be fixed on.
The outside of lower electrode 4 is provided with annular element 3.The material of annular element can be the semi-conducting materials such as silicon or silicon carbide
Can be the conductors material such as metal, for improve substrate edge region and above substrate center region plasma distribution it is equal
Even property.Annular element as better embodiment can be moved down vertically on (that is, direction of vertical top electrode or lower electrode)
It is dynamic.The annular element can be surrounded partially the processing region P from side.
Radio frequency power source (be usually a high frequency power generator) 6 can be applied to lower electrode 4, for will be between upper/lower electrode
Reaction gas excitation is plasma.To improve the efficiency of feed-in, can an impedance be set between radio frequency power source and lower electrode 4
Matching network (impedance matching network) (not shown).The frequency of radio frequency power source is typically larger than 10M,
For example can be 60M or 13.56M etc..
Plasma processing apparatus can also set bias power source (not shown).Bias power source is usually a high frequency power
Generator, frequency are lower than the frequency of radio frequency power source, thus can be described as the high frequency power generator compared with low frequency.Bias power source
The lower electrode 4 is commonly applied to, for controlling the distribution of energy of plasma.To improve the efficiency of its feed-in, can bias
An impedance matching network (impedance matching network) is set (not shown in figure between power source and lower electrode 4
Show).The frequency in bias power source is usually less than 5M, for example may be selected to be 2M or 500K etc..
Being not applied to the top electrode of high frequency power source (e.g., radio frequency power source and bias power source) can usually be grounded.Reaction
The side wall of chamber is generally also grounded.
In process, along substrate (lower electrode 4) -2 path of plasma-top electrode there are alternating electric field distribution,
The distribution of alternating electric field reflects distribution of the plasma in reaction chamber.Since certain elements are (as positioned at reaction chamber side wall
Substrate transfer door, positioned at exhaust outlet of reaction chamber bottom etc.) geometry is asymmetric, (such as electrostatic chuck focuses on certain elements
Ring) factors such as property that temperature distribution is non-uniform and element electrical performance inhomogeneities influence, alternating electric field be not uniformly point
Cloth.In general, the plasma above substrate center region is relatively strong (distribution comparatively dense), the plasma of substrate edge overlying regions
Body is weaker (distribution is sparse), this causes, and substrate center region etch rate is very fast, fringe region etch rate is slower, carves
Lose problem of non-uniform.
By being grounded annular element 3, for example annular element 3 can be electrically connected to the top electrode 2 being grounded, can significantly improve
The etch rate in substrate edge region improves the etching homogeneity of substrate center region and fringe region.The ground connection of annular element 3,
It is equivalent at annular element 3 and increases an electric field channel (current channel), that is, enhance the plasma in substrate edge region
Concentration and intensity can accelerate the etch rate in substrate edge region.To reach more preferably effect, annular element in height can be with
Substrate (or lower electrode) is concordant or higher than substrate (or lower electrode).
More preferably, it can connect in the Grounding of annular element 3 into an impedance regulating 8.(ratio is adjusted by impedance
Such as, regulation resistance or adjust inductance adjust capacitance or adjust simultaneously in them any two or adjust three simultaneously), can be to base
The enhancing degree of piece fringe region etch rate carries out different degrees of adjusting according to actual needs.
In general, impedance is smaller, the degree of substrate edge region etch rate enhancing is bigger；Impedance is bigger, substrate edge area
The degree that domain etch rate improves is smaller.Corresponding, impedance regulating 8 can be or can include a variable resistance or one
The combination of variometer or a variable capacitance or any two in them or the combination of three.The result of actual experiment also demonstrates
The effect.
Fig. 2 show the change embodiment of Fig. 1 annular elements.Annular element is along the circumferential direction divided into multiple independent portions
Divide 31,32,33, each section 31,32,33 is connected to earthed circuit (for example, can lead to by an impedance regulating 81,82,83
It crosses and is electrically connected to the top electrode 2 being grounded and is grounded).It can be mutual indepedent between each impedance regulating 81,82,83
Control is adjusted.Impedance between annular element each section and top electrode (or ground) is adjusted respectively, is equivalent to annular element
Various pieces at electric field channel (current channel) be adjusted, improve plasma distribution.
When etch rate such as a certain section in substrate edge region is significantly lower than other regions, it can adjust at the section
Impedance regulating (impedance regulating is also and the corresponding impedance regulating in the section), reduces its impedance, so as to
Accelerate the etch rate of the section.Conversely, the etch rate such as a certain section in substrate edge region is apparently higher than other regions
When, (impedance regulating is also that corresponding with section impedance adjusts dress to the impedance regulating that can adjust at the section
Put), increase its impedance, so as to slow down the etch rate of the section.
To achieve the purpose that intense adjustment as far as possible, it is contemplated that by annular element be divided into greater number (for example, 4,5,
6 or 8 etc.) independent sector.But it is unsuitable excessive, it tries not, more than 24, otherwise to greatly improve cost, and simultaneously improve
Degree is not also obviously improved.
In general, each section split by annular element, such as 81,82,83, should be generally uniform segmentation.But this is simultaneously
It is inessential.
Impedance regulation and control mentioned here, can be the regulation and control to resistance, can be the regulation and control to capacitance, can be to inductance
Regulation and control or to the regulation and control of arbitrary two kinds of combination in them, can also be while to the tune of resistance, capacitance and inductance
Control.Corresponding variable resistance, variable capacitance, variometer need to only be used；It is similar with embodiment in Fig. 1, here no longer
It repeats.
Fig. 3 is the another embodiment of annular element.Other structures in addition to annular element can be with Fig. 1 or Fig. 2 embodiments
Identical, I will not elaborate.In Fig. 3, annular element includes the multiple rings 31,32,33,34 being vertically arranged, and is stayed between adjacent ring
There is gap.The gap can hold gas and pass through, but plasma not allowed to pass through substantially, thus the annular element can be considered as plasma
Body confinement ring is act as plasma confinement, the processing region being limited between upper/lower electrode 2 and 4.The annular element can also wrap
Connecting rod 38 is included, each ring 31,32,33,34 is conspired to create into an entirety.The connecting rod is preferably conductive material (including leading
Body and semiconductor), each ring 31,32,33,34 is electrically connected.
Position in figure, the annular element can surround processing region P completely from side；Treat that it is moved up or down
Afterwards, then it may be merely able to part and surround processing region P.But this does not interfere it to generate improved effect.
Similar to Fig. 2 embodiments, the annular element in Fig. 3 also may include several independent parts.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (15)
1. a kind of capacitance coupling plasma processing unit, including：
Reaction chamber is provided with roof, side wall and bottom wall；
Top electrode in the reaction chamber, is arranged on the roof；
Lower electrode is oppositely arranged in the reaction chamber, and with the top electrode；
Radio frequency power source is applied to the lower electrode；
Bias power source is applied to the lower electrode；
Annular element around the lower electrode setting, and can move up and down；The annular element is along the circumferential direction divided at least two
Part, each section are electrically connected to the top electrode.
2. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that each section of the annular element
It is electrically connected with the top electrode by an impedance regulating.
3. capacitance coupling plasma processing unit as claimed in claim 2, which is characterized in that the impedance regulating packet
Include a variometer or a variable resistance or a variable capacitance.
4. capacitance coupling plasma processing unit as claimed in claim 2, which is characterized in that the impedance regulating packet
Include arbitrary two kinds in variometer, variable resistance and variable capacitance or include simultaneously variometer, variable resistance with can
Become capacitance.
5. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the material packet of the annular element
Include semiconductor or conductor.
6. capacitance coupling plasma processing unit as claimed in claim 5, which is characterized in that the material packet of the annular element
Include silicon or silicon carbide or metal.
7. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the top electrode ground connection.
8. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the annular element includes vertical
Multiple rings of arrangement, there are gaps between adjacent ring.
9. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that between top electrode and lower electrode
Region be processing region；When being moved to suitable position, the annular element can completely be surrounded from side or part surrounds institute
State processing region.
10. a kind of capacitance coupling plasma processing unit, including：
The top electrode that is oppositely arranged and lower electrode are processing region between the upper and lower electrode；
Radio frequency power source；
Bias power source is applied to the lower electrode；
Annular element, around the lower electrode setting, the annular element is along the circumferential direction divided at least two parts, each section
It is grounded by an impedance regulating.
11. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the impedance regulating
Including a variometer or a variable resistance or a variable capacitance.
12. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the impedance regulating
Include including arbitrary two kinds in variometer, variable resistance and variable capacitance or simultaneously variometer, variable resistance with
Variable capacitance.
13. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the material of the annular element
Including semiconductor or conductor.
14. capacitance coupling plasma processing unit as claimed in claim 13, which is characterized in that the material of the annular element
Including silicon or silicon carbide or metal.
15. a kind of method of plasma processing, including：
Pending substrate is put into such as claim 2 to 4 and the processing of 10 to 14 any one of them capacitance coupling plasmas to fill
In putting, and each impedance regulating is adjusted, to adjust the processing speed in substrate edge region；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is processed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611254798.8A CN108269728A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
| TW106136931A TWI679675B (en) | 2016-12-30 | 2017-10-26 | Capacitive coupling plasma processing device and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611254798.8A CN108269728A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
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| CN108269728A true CN108269728A (en) | 2018-07-10 |
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| CN201611254798.8A Pending CN108269728A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
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| TW (1) | TWI679675B (en) |
Cited By (4)
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| CN111799144A (en) * | 2019-04-03 | 2020-10-20 | Tes股份有限公司 | Substrate processing apparatus |
| CN112151343A (en) * | 2019-06-28 | 2020-12-29 | 中微半导体设备(上海)股份有限公司 | Capacitive coupling plasma processing device and method thereof |
| CN112530775A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN113994452A (en) * | 2019-07-24 | 2022-01-28 | 拓荆科技股份有限公司 | Semiconductor processing apparatus and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201841200A (en) | 2018-11-16 |
| TWI679675B (en) | 2019-12-11 |
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