CN103168353B - 增强的晶圆载体 - Google Patents
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Abstract
用于如化学气相沉积等的晶圆处理过程中的晶圆载体(32),具有用于容纳晶圆的容纳部(40,240)及用于在容纳部的底表面上方支撑晶圆的支撑面。载体设置有锁合器(50,250),用于限制晶圆远离支撑面(56,254)向上运动。对晶圆向上运动的限制,限制了晶圆变形对晶圆与底表面之间间隔的影响,因此限制了晶圆变形对热传递的影响。载体可包括主要部分(38)和热导率比主要部分高的小部分(44),小部分设置在容纳部下方。
Description
相关申请的交叉引用
本申请是专利申请号为12/855739、申请日为2010年8月13日的美国专利申请的后续申请,其公开的内容以引用的方式并入本文。
背景技术
本发明涉及晶圆处理设备、用于这种处理设备的晶圆载体、以及处理晶圆的方法。
许多半导体器件通过半导体材料在基片上的外延生长而形成。基片通常为圆盘形式的晶体材料,一般称为“晶圆”。例如,由化合物半导体,如III-V族半导体等化合物半导体形成的器件,典型地应用金属有机化学气相沉积或“MOCVD”、通过生长化合物半导体的连续层而形成。在这个过程中,晶圆暴露至晶圆表面上方流动的气体组合物,同时晶圆保持在高温下,气体组合物通常包括金属有机化合物及V族元素的来源。III-V族半导体的一个示例为氮化镓,其可通过有机镓化合物和氨在如蓝宝石晶圆等的具有适当晶格间距的基片上反应而形成。在氮化镓及相关化合物的沉积过程中,晶圆的温度典型地保持在500℃至1200℃的数量级。
复合器件可通过在稍微不同的反应条件下、在晶圆的表面上连续沉积许多层而制造,例如,加入其他III族或Ⅴ族元素,以改变半导体的晶体结构和带隙。例如在氮化镓基半导体中,铟、铝或二者都可以不同比例应用,用于改变半导体的带隙。同时,可加入P型或N型的掺杂物,以控制每层的导电性。在所有的半导体层都形成后,典型地,在应用了适当的电触点后,晶圆可切割成单独的器件。如发光二极管(LED)、激光器、及其他电子和光学器件等的器件可采用这种方式制造。
在典型的化学气相沉积过程中,大量晶圆保持在通常称为晶圆载体的元件上,使得每个晶圆的顶面都在晶圆载体的顶面上暴露。然后把晶圆载体放入反应室内,并保持在所需的温度,同时气体混合物从晶圆载体的表面流过。在处理过程中,载体上各晶圆的顶面上所有点保持均一条件是重要的。反应气体成分及晶圆表面温度的微小变化,都可使所生成半导体器件的性能产生不期望的改变。例如,在沉积氮化镓和氮化铟层时,晶圆表面温度的改变,将致使沉积层的成分和带隙的改变。因为铟具有相对高的气相压力,在晶圆的表面温度较高的那些区域,沉积层将具有较低比例的铟和较大的带隙。如果沉积层是发光二极管(LED)结构的活性发光层,形成的发光二极管(LED)所发射光波的波长也将改变。因此,在本领域中,在保持均一条件方面,之前已进行了相当大的努力。
在工业中已广泛接受的一种类型的化学气相沉积(CVD)设备,如在公开号为2010-0055318的美国专利申请中所述,其公开的内容以引用的方式并入本文。根据此专利申请中某些实施例的设备,应用具有大量晶圆承载区域的大盘形式的晶片载体,每个晶圆承载区域适于承载一个晶圆。晶圆载体支撑在反应室内的主轴上,使得晶片载体的顶面上具有面向上朝着气体分配元件的晶圆暴露表面。当主轴旋转时,气体向下引导至晶圆载体的顶面上,并经顶面向晶圆载体外周流动。用过的气体通过位于晶圆载体下方的孔口从反应室排出。通过位于晶圆载体底面下方通常为电阻加热元件的加热元件,晶圆载体保持在所需的高温。这些加热元件保持在高于晶圆表面所需温度的温度,而气体分配元件通常保持在远低于所需反应温度的温度,从而防止气体过早发生反应。因此,热量从电阻加热元件传递至晶圆载体的底面,并穿过晶圆载体向上流动至各单独的晶圆。
尽管为优化这种***,本领域之前已投入了相当大的努力,但是这种***仍需要进一步的改进。特别地,在每个晶圆的表面及整个晶圆载体上提供更好的温度均匀性将是理想的。
发明内容
本发明的一个方面提供了处理晶圆的方法。根据本发明这个方面的方法最好包括使载体绕轴旋转的步骤。载体具有设置于其上的复数个晶圆,晶圆顶面朝向平行于轴的向上的方向。该方法最好包括,在旋转步骤中,在载体面向上的支撑面上支撑晶圆,且在旋转步骤中限制晶圆远离支撑面的向上运动,及在旋转步骤期间处理晶圆。处理步骤可包括从载体传递热量至晶圆。例如,在旋转步骤中可进行上述的化学气相沉积过程。该方法最好进一步包括,在旋转步骤中限制晶圆远离所述轴的径向运动。在根据本发明这个方面的优选方法中,对晶圆向上运动的限制,限制了晶圆变形对于在载体与晶圆之间热传递的影响,因此提高了晶圆表面温度的均匀性,如下文进一步所描述。
本发明的另一方面提供了晶圆载体。根据本发明这个方面的晶圆载体最好包括具有朝向相反的顶面和底面的主体,主体具有复数个在主体顶面开口的容纳部。载体优选地限定面向上的支撑面,支撑面设置在每个容纳部内且位于主体顶面的下方。最优选地,根据本发明这个方面的载体包括与容纳部关联的锁合器。每个锁合器最好具有面向下的锁定面。当锁合器处于工作位置时,锁定面延伸至关联容纳部内或关联容纳部的上方,使得锁定面至少部分地限制晶圆的向上运动,晶圆设置在容纳部内且搁置在支撑面上。
根据本发明另一方面的晶圆载体包括,具有沿水平方向延伸且朝向相反的顶面和底面的主体、在顶面开口的复数个容纳部,每个这种容纳部适于保持一个晶圆,使晶圆的顶面在主体的顶面暴露。主体最好包括,由具有第一热导率的第一材料制成的主要部分。优选地,主要部分具有与容纳部对齐的竖直延伸的孔,主体进一步包括设置在主要部分的孔内的小部分。小部分优选地由第二材料形成,其具有比第一热导率更高的第二热导率。主体可进一步包括在主要部分与每个小部分之间竖直延伸的热障,热障抑制在主要部分与小部分之间水平方向上的热传导。
根据本发明又一方面的晶圆载体可包括,具有主要部分和小部分的主体,此外在主要部分和每个小部分之间具有竖直延伸的边界部分。在竖直方向上,边界部分最好具有与主要部分的热导率不同的热导率。
本发明又一方面提供了包含上述晶圆载体的处理设备。
附图说明
图1是描述根据本发明一个实施例化学气相沉积设备的简化的剖视示意图。
图2是图1的设备中应用的晶圆载体的俯视示意图。
图3是沿图2中剖切线3-3剖切的局部截面示意图,描述了与晶圆关联的晶圆载体。
图4是描述图2和图3中晶圆载体的一部分的局部俯视图。
图5是描述图4所指示区域的局部放大视图。
图6是与图3类似的视图,但描述的是不同工作条件下的图1至图5中的晶圆载体和晶圆。
图7是与图6类似的视图,但描述的是与图6类似的工作条件下的常规晶圆载体和晶圆。
图8是描述根据本发明另一实施例晶圆载体的局部俯视图。
图9是沿图8中剖切线9-9剖切的局部放大截面图。
图10是沿图8中剖切线10-10剖切的局部放大截面图。
图11、图12和图13是根据本发明另一实施例晶圆载体的一部分的局部截面示意图。
具体实施方式
根据本发明一个实施例的化学气相沉积设备包括具有气体分配元件12的反应室10,气体分配元件12设置在反应室10的一个端部。反应室10的具有气体分配元件12的该端部在本文称为反应室10的“顶”端。在常规重力参照系中,反应室的该端部典型地(但不是必需地)位于反应室的顶部。因此,本文所应用的向下的方向指的是从气体分配元件12离开的方向;而向上的方向指的是反应室内朝着气体分配元件12的方向,并不考虑这些方向是否与重力的向上和向下方向对齐。类似地,本文所描述的元件的“顶”和“底”面是参照反应室10和元件12的参照系的。
气体分配元件12与用于供应在化学气相沉积(CVD)处理过程中应用的处理气体的来源14连接,处理气体如载体气体和反应气体,反应气体如典型地为有机金属化合物的Ⅲ族金属来源物质、及如氨或其他V族元素氢化物的V族元素来源物质。气体分配元件12设置为接收各种气体并引导处理气体大致沿向下的方向流动。气体分配元件12最好还与冷却***16连接,冷却***16设置为使液体循环通过气体分配元件,以使工作过程中元件的温度保持在所需的温度。反应室10还配备有排气***18,设置为通过反应室10底部或邻近底部的孔口(未示出),从反应室的内部区域排放用过的气体,从而允许气体从气体分配元件沿向下的方向连续地流动。
主轴20设置在反应室内,使得主轴的中心轴22沿向上和向下的方向延伸。主轴具有在其顶端的接头24,即接头24在主轴最靠近气体分配元件12的端部。在所描述的特定实施例中,接头24大致为截头圆锥形的元件。主轴20与如电机驱动器等的旋转驱动机构26连接,设置为使主轴绕中心轴22旋转。加热元件28安装在反应室内,在接头24下方围绕主轴20设置。反应室还设置有用于***和取出晶圆载体的可开启开口30。上述元件可为常规结构。例如,本申请的受让人,美国纽约州普莱恩维尤(Plainview)的威科仪器有限公司(VeecoInstruments,Inc),市售的注册商标为“涡轮盘”(TURBODISC)的适用反应室。
在图1描述的工作条件下,晶圆载体32安装在主轴的接头24上。晶圆载体包括通常为圆盘形式的主体,具有垂直于顶面和底面延伸的中心轴25。晶圆载体的主体具有本文称为“顶”面34的第一主表面,及本文称为“底”面36的第二主表面。晶圆载体的结构也具有接头39,接头39设置为与主轴的接头24接合,以在主轴上保持晶圆载体的主体,且顶面34面向上朝着气体分配元件12,底面36面向下朝着加热元件28并远离气体分配元件。仅以示例的方式,晶圆载体主体可为约465毫米的直径,且载体的顶面34与底面36之间的载体厚度可为15.9毫米的数量级。在所示的特定实施例中,接头39形成为从主体32底面凹陷的截头圆锥。但是,如在同时待审的、共同转让的公开号为2009-0155028A1的美国专利申请中所描述的,其公开的内容以引用的方式并入本文,该结构可包括与主体分别形成的轮毂,接头可包含在这样的轮毂内。同样,接头的设置将根据主轴的设置而定。
主体最好包括主要部分38,形成为第一非金属耐热材料的单片板,例如材料从由碳化硅、氮化硼、碳化硼、氮化铝、氧化铝、蓝宝石、石英、石墨及其组合物组成的群组中选择,具有或没有如碳化物、氮化物或氧化物等的耐热涂层。
载体主体限定了复数个在顶面开口的圆形容纳部40。从图1和图3可以最佳地看出,主体的主要部分38限定了基本平坦的顶面34。主要部分38具有从顶面34穿过主要部分延伸至底面36的孔42。小部分44设置在每个孔42内。位于每个孔内的小部分44限定了容纳部40的底表面46,底表面低于顶面34凹陷。小部分44由第二材料制成,优选地为非金属耐热材料,包含碳化硅、氮化硼、碳化硼、氮化铝、氧化铝、蓝宝石、石英、石墨及其组合物,具有或没有如碳化物、氮化物或氧化物等的耐热涂层。第二材料最好与构成主要部分的第一材料不同。最优选地,第二材料具有比第一材料的热导率更高的热导率。例如,在主要部分由石墨制成时,小部分可由碳化硅制成。小部分44和主要部分38共同限定主体的底面36。在图3所描述的特定实施例中,主要部分38的底面是平坦的,且小部分44的底面与主要部分的底面共面,从而底面36为平坦的。
小部分44与孔40的壁摩擦接合。例如,小部分可压配合至孔内、或通过升高主要部分的温度至一较高的温度并在孔内***冷的小部分而收缩配合。所有容纳部最好具有均一深度。对所有的小部分如通过研磨或抛光而形成均一的厚度,这种均一性可容易地获得。
在每个小部分44与主要部分38的包围材料之间具有热障48。沿平行于载体顶面和底面的水平方向,热障为其热导率小于主要部分基体材料的热导率的区域。在图3所描述的特定实施例中,热障包括宏观间隙48,例如,由限定孔42的主要部分38的壁内的凹槽而形成的、约为100微米或更厚的间隙。此间隙容纳如空气或工作过程中遇到的处理气体等的气体,因此具有比邻近的固体材料更低的热导率。
小部分44和主要部分38的邻接表面也限定部分的热障。尽管这些表面在宏观尺寸上彼此邻接,但没有一个表面是完全平滑的。因此,邻接表面的某些部分之间将有微观的充气的间隙。这些间隙还将阻碍小部分44与主要部分38之间的热传导。
从图3和图4可以最佳地看出,载体进一步包括与容纳部关联的锁合器50。锁合器50优选地由耐热材料形成,其具有的热导率低于小部分44的热导率,优选地低于主要部分38的热导率。例如,锁合器可由石英制成。每个锁合器包括以竖直圆柱形轴形式的中部52(图3)和以圆盘形式的底部54,底部与中部共轴,并从中部的轴向外突出。每个锁合器的底部限定面向上的支撑面56。每个锁合器进一步包括垂直于中部的轴而突出的顶部58。顶部关于中部52的轴是不对称的。每个锁合器的顶部58限定了面向下的锁定面60,覆盖锁合器的支撑面56但与支撑面间隔开。因此,每个锁合器限定了表面56与60之间的间隙62。
每个锁合器都固定于晶圆载体。从图3和图5可最佳地看出,每个锁合器的中部52紧靠主要部分内的孔42的壁。底部54延伸至孔壁内的切口64(图3)内,使得相对于晶圆载体主体,锁合器的竖直运动被限制,从而底部54搁置在容纳部的底表面46上。从图5中可以看出,主要部分38可具有从孔42的壁延伸至容纳部内的突起66,从而限制锁合器水平方向的运动。
当锁合器位于图3和图4所示的工作位置时,每个锁合器的顶部58向内朝着容纳部的中心68突出。每个锁合器可转至非工作位置,其中顶部旋转至如图5中虚线所示的58'的位置,使得顶部不向内朝着容纳部的中心突出。
每个容纳部40设置有三个锁合器50。本文称为“内”锁合器的锁合器50a,设置在与载体主体中心轴25的距离为D50A(图4)的位置,该距离小于从容纳部中心68至中心轴25的距离DC。锁合器50b和50c为“外”锁合器,设置在与载体中心轴25的距离大于从中心轴至容纳部中心68的距离DC的位置。在所描述的特定实施例中,锁合器围绕容纳部40的外周彼此间隔开,且相邻锁合器之间的距离相等。内锁合器50a位于通过载体中心轴25和容纳部中心68延伸的径线R上,而两个外锁合器50b和50c位于此径线的两相对侧。
在工作过程中,载体装载有圆形的盘状晶圆70。与每个容纳部关联的一个或多个锁合器在其非工作位置,晶圆放置在容纳部内,使得晶圆的底面72搁置在锁合器的支撑面56上。各锁合器的支撑面在容纳部的底表面46上方共同支撑晶圆的底面72,从而在晶圆的底面和容纳部的底表面之间具有间隙73(图3),并使得晶圆的顶面74与载体的顶面34共面或接近共面。包括锁合器在内的载体的尺寸,,选择为使得晶圆的边缘或外周面76与锁合器的中部52之间具有非常小的间距。因而各锁合器的中部以容纳部内的晶圆为中心,使得沿晶圆的外周,晶圆边缘与容纳部的壁之间的距离DW基本为均匀的。
锁合器转至工作位置,使得每个锁合器的顶部58和面向下的锁定面60(图3)在容纳部上方、因此也在晶圆的顶面74上方,向内突出。锁定面60设置在竖直高度高于支撑面56的高度上。因此,晶圆在支撑面56和锁定面之间接合,且相对于载体向上和向下的运动被限制。锁合器的顶部和底部元件最好尽可能地小,使得在每个晶圆外周邻近,这些元件只与晶圆表面非常小的一部分接触。例如,锁定面和支撑面可只接合几平方毫米的晶圆表面。
典型地,当载体在反应室外时,晶圆装载在载体上。利用常规机械设备(未示出),将其上装载有晶圆的载体安装到反应室内,使得载体的接头39与主轴的接头24接合,且载体的中心轴25与主轴的轴22共轴。主轴和载体绕此公共轴旋转。根据所应用的特定处理过程,这种旋转可在每分钟几百转或更多。
启动气体来源14,以向气体分配元件12供应处理气体和载体气体,使得这些气体向下朝着晶圆载体和晶圆流动,并在载体的顶面34及晶圆的暴露顶面74上方大致沿径向向外流动。气体分配元件12和反应室10的壁保持在相对低的温度,以阻止气体在这些表面发生反应。
启动加热器28,以将载体和晶圆加热至所需的处理温度,对于特定的化学气相沉积过程,可为500℃至1200℃的数量级。热量主要通过辐射的传热方式,从加热器传递至载体主体的底面36。通过传导,热量穿过载体主体的主要部分38向上流动至主体的顶面34。热量还穿过晶圆载体的小部分44、横过容纳部底表面与晶圆底面之间的间隙73、穿过晶圆,向上流动至晶圆的顶面74。热量通过辐射从主体和晶圆的顶面传递至反应室10的壁和气体分配元件12,并且传递至处理气体。
处理气体在晶圆的顶面发生反应以处理晶圆。例如,在化学气相沉积过程中,处理气体在晶圆顶面形成沉积。典型地,晶圆由晶体材料制成,沉积过程为具有与晶圆材料类似的晶格间距的晶体材料的外延沉积。
为了处理的均匀性,每个晶圆顶面的温度在晶圆的整个顶面上应为恒定的,且与载体上其他晶圆的温度相等。为实现这点,每个晶圆的顶面74的温度应与载体顶面34的温度相等。载体顶面的温度根据穿过主体的主要部分38的热传递速度而定,而晶圆顶面的温度根据穿过小部分44、间隙73和晶圆本身的热传递速度而定。小部分44的热导率高、产生的热阻低,用于补偿间隙73的高热阻,使得晶圆顶面保持在与载体顶面的温度基本相等的温度。这样使晶圆边缘与载体的环绕部分之间的热传递最小化,从而有助于在每个晶圆的整个顶面上保持均一的温度。为提供这种效果,容纳部的底表面46必须处于比主要部分38的邻接部分更高的温度。主体的小部分44和主要部分38之间的热障48使从小部分44至主要部分38的热损失最小化,因此有助于保持这种温度差异。
在工作过程中,由于载体旋转产生的离心力,使每个晶圆倾向于远离载体的中心轴25向外运动。通过锁合器的中部52,每个晶圆在容纳部内保持准确居中。离心力促使每个晶圆压向外锁合器50b和50c的中部52。这些部分用作限制晶圆向外运动的邻接元件。晶圆的准确居中使晶圆的边缘与容纳部的环绕壁之间保持均一的距离DW,并避免晶圆与容纳部壁之间直接接触。这样使晶圆与载体之间的热传递最小化,还有助于确保产生的任何热传递都是基本上关于晶圆中心径向对称的。
在工作过程中,晶圆可从平盘状变形为圆顶状。例如,对于具有的无变形晶格间距与晶圆的晶体材料的无变形晶格间距稍微不同的晶体材料,其外延沉积在晶圆的顶面施加了拉伸或压缩应力,晶圆产生变形以缓解这种应力。图6描述了与图3中所示相同的晶圆和容纳部,晶圆70变形为圆顶形状。这种变形致使晶圆的中心朝着或远离容纳部的底表面46弯曲,因此致使晶圆底面72与底表面46之间的间隙73的高度改变。通过锁合器50限制晶圆边缘向上运动,间隙的高度差异ΔH相对小,由下式给出:
ΔH=K*d2/8
其中:K为晶圆曲率;
d为晶圆直径。
在图7所示的常规晶圆载体中,容纳部具有底切的外周壁142和圆形支撑面156。晶圆靠在外周壁的离载体中心轴最远的外部142a。底切的外周壁对着支撑面156向下保持晶圆的外侧部分101。但是,最接近载体中心轴的晶圆内侧部分103,相对于载体的向上运动没有被限制,从而晶圆的弯曲致使内侧部分103向上抬起,远离支撑面156。这致使晶圆底面172与容纳部底表面146之间的间隙173的高度差ΔH'很大。应用常规晶圆载体时:
ΔH'=K*d2/2。
换言之,晶圆边缘被锁合器(图3)约束的高度差ΔH'仅为常规载体的高度差ΔH'的四分之一。因为穿过间隙的热传递速度直接随间隙高度而变化,间隙高度差异的显著缩减使向晶圆各部分之间的热传递差异相对应地缩减。此外,晶圆被锁合器约束(图3)时,间隙高度以及热传递,以关于晶圆中心径向对称的模式变化。因为当晶圆被约束时,晶圆边缘的内侧部分没有向上抬起,将不会在晶圆载体和晶圆顶面产生由于晶圆边缘高于载体顶面突出而导致的气体流动干扰。
锁合器自身可导致小的局部的气体流动干扰。这种现象通过使锁合器,特别是锁合器的顶部58,尽可能地小并尽可能薄而最小化。同时,锁合器的顶部优选地具有流线形状。将有一些少量的热传递通过锁合器来传导,但由于锁合器与晶圆之间的接触面积小,且锁合器的热导率低,这种影响是有限的。
上述的布置可改变。例如,上述的锁合器可与没有上述小部分的具有单块主体的晶圆载体一起使用。同样,锁合器、支撑面和邻接元件的布置可与上述有所改变。图8至图10描述的晶圆载体具有限定容纳部240的单块主体232。每个容纳部内面向上的支撑面由复数个小的支撑元件254限定,支撑元件以圆盘状按钮的方式搁置在容纳部的底表面246上。这些支撑元件环绕容纳部的周边分布。
每个容纳部还具有锁合器250。锁合器可滑动地安装至载体主体上,用于朝着或远离载体中心轴225运动。锁合器具有沿向下方向从容纳部中心268向外倾斜的晶圆接合表面260(图8和图10)。换言之,表面260的下部与该表面的上部相比,离容纳部的中心268更远且离载体的中心轴225更近。因此,表面260面向下朝着底表面246,同时向内朝着容纳部的中心。载体具有通道202,从图9中的截面可以看出,该通道具有燕尾槽形状或基本为梯形。锁合器250具有相对应的形状。锁合器在通道内接合,使得锁合器可在虚线250'所示的非工作位置与实线所示的工作位置之间移动。在工作位置时,具有接合面260的锁合器端部突出至容纳部内,并越过容纳部的竖直壁242,使得表面260支承在容纳部内容纳的晶圆270的上边缘上。载体旋转产生的离心力迫使锁合器远离中心轴225,因而朝向容纳部的中心268。因此,当载体旋转时,锁合器250向下保持晶圆的内侧部分253,迫使晶圆与支撑元件254接合。为清楚图示起见,锁合器的尺寸是放大的。实际上,与晶圆接触的锁合器的这些部分应当尽可能的小,以使通过锁合器的热传递最小化。
每个容纳部还具有邻接元件252。邻接元件设置为与容纳部的中心268相比,距载体中心轴225更远。邻接元件具有沿向下的方向从中心轴225向外倾斜的表面269。在工作过程中,晶圆上的离心力倾向于迫使晶圆压向表面269,使得邻接元件向下对着支撑元件254保持晶圆的外侧部分251。邻接元件可与载体主体分别形成,或可与载体主体为一体的。
在另一变例(图11)中,载体主体的小部分344可通过套管348而安装至主要部分338,套管348由石英或热导率低于主要部分和小部分的热导率的其他材料制成。此处同样,小部分最好具有比主要部分更高的热导率。套管用作小部分与主要部分之间热障的一部分。套管与小部分之间、套管与主要部分之间的固体与固体交界面提供了附加的热障。在这个变例中,套管限定了容纳部的竖直壁342。
图12的实施例与参照图1至图6在上文所述的实施例类似,只是每个小部分444包括的主体443的直径,小于主要部分438的相对应孔442的直径,从而设置了作为热障的间隙448。每个小部分还包括紧配合在主要部分438内的头部445,以保持小部分与孔442同心。
图13中的晶圆载体包括与参照图1至图6在上文所述类似的主要部分和小部分544。但是,图13中的载体主体包括围绕小部分且设置在每个小部分与主要部分之间的环状边界部502。边界部502具有与主要部分及小部分不同的热导率。如图所示,边界部在下方与每个容纳部的周边对齐。在另一变例中,边界部可在下方与围绕每个容纳部的顶面534的一部分对齐。边界部的热导率可独立地选择,以抵消传向或来自晶圆边缘的热传递。例如,在倾向于比晶圆更热的顶面534的那些部分,边界部的热导率可比主要部分的热导率更低。
上述的晶圆载体和设备可大幅减小晶圆表面上的温度差异。但是,即使具有上述的这些特征,一些温度不均一性还会发生。因为温度分布大致是关于每个晶圆的中心径向对称的,用于抑制温度差异的其他方式也可容易地应用。例如共同待审、共同转让的公开号为2010-0055318的美国专利申请中所公开的,其公开的内容以引用的方式并入本文,晶圆载体的热导率可随其厚度的变化而变化。例如,在容纳部的中心处晶圆倾向于如图6所示朝着容纳部的底表面弯曲时,容纳部中心处的间隙的热导率将比容纳部边缘附近的间隙的热导率高。这可通过增加载体主体的厚度来抵消,在容纳部中心下方的主体区域增加厚度,从而减小该区域的热导率。
因为上述的这些实施例和其他变例及技术特征的组合都可利用,优选实施例的上述描述应当认为是本发明范围的说明而不是限制。
工业实用性
本发明可应用于例如半导体器件的制造中。
Claims (8)
1.晶圆载体,包括具有沿水平方向延伸且朝向相反的顶面和底面的主体,所述主体具有复数个延伸入所述顶面且在所述顶面开口的容纳部,每个这种容纳部都适于保持晶圆,使所述晶圆的顶面在所述主体的所述顶面暴露,所述主体包括由具有第一热导率的第一材料制成的主要部分,所述主要部分具有与所述容纳部对齐的竖直延伸的孔,所述主体进一步包括由具有第二热导率的第二材料制成的小部分,所述第二热导率高于所述第一热导率,所述小部分设置在所述主要部分的所述孔内并限定所述容纳部的底表面,在所述主要部分与每个小部分之间,所述主体具有竖直延伸的热障,所述热障抑制所述主要部分与所述小部分之间水平方向上的热传导,其中所述主要部分和所述小部分设置为,当通过传递热量至所述载体的所述主体的所述底面而加热所述载体时,在所述载体的所述主体的所述顶面与所述晶圆的所述顶面上提供相对均一的温度分布。
2.根据权利要求1所述的晶圆载体,其中所述小部分还限定所述底面的一部分。
3.根据权利要求1所述的晶圆载体,其中所述热障包括所述小部分和所述主要部分的邻接表面之间的交界面。
4.根据权利要求1所述的晶圆载体,其中所述热障包括由具有第三热导率的第三材料制成的至少一个***件。
5.晶圆载体,包括具有沿水平方向延伸且朝向相反的顶面和底面的主体,所述主体具有复数个延伸入所述顶面且在所述顶面开口的容纳部,每个这种容纳部都适于保持晶圆,使所述晶圆的顶面在所述主体的所述顶面暴露,所述主体包括主要部分,所述主要部分具有与所述容纳部对齐的竖直延伸的孔,所述主体进一步包括位于所述主要部分的所述孔内并限定所述容纳部的底表面的小部分,在所述主要部分与每个小部分之间,所述主体具有竖直延伸的边界部分,沿所述竖直方向,所述边界部分具有的热导率与所述主要部分的热导率不同,其中所述主要部分和所述小部分设置为,当通过传递热量至所述载体的所述主体的所述底面而加热所述载体时,在所述载体的所述主体的所述顶面与所述晶圆的所述顶面上提供相对均一的温度分布。
6.根据权利要求5所述的晶圆载体,其中所述小部分具有的热导率与所述主要部分不同,且与所述边界部分不同。
7.根据权利要求5所述的晶圆载体,其中所述容纳部为圆形的。
8.根据权利要求5所述的晶圆载体,其中所述边界部分包括至少一个***件,在所述竖直方向,所述***件具有的热导率与所述主要部分的热导率不同。
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EP2603927A1 (en) | 2013-06-19 |
US20120040097A1 (en) | 2012-02-16 |
CN103168353A (zh) | 2013-06-19 |
US8535445B2 (en) | 2013-09-17 |
KR101885747B1 (ko) | 2018-08-06 |
JP2013541183A (ja) | 2013-11-07 |
JP5926730B2 (ja) | 2016-05-25 |
TWI488258B (zh) | 2015-06-11 |
TW201214619A (en) | 2012-04-01 |
SG187838A1 (en) | 2013-03-28 |
SG10201406101PA (en) | 2014-10-30 |
WO2012021370A4 (en) | 2012-04-05 |
KR20130097184A (ko) | 2013-09-02 |
WO2012021370A1 (en) | 2012-02-16 |
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