JP5169097B2 - 半導体装置の製造装置および製造方法 - Google Patents
半導体装置の製造装置および製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 237
- 125000006850 spacer group Chemical group 0.000 claims description 56
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 238000009826 distribution Methods 0.000 description 45
- 238000010586 diagram Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- -1 nitride compound Chemical class 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- CNIOLGKULFPBMJ-UHFFFAOYSA-N CCCCCCC(C)CCCCCCCCCCN Chemical compound CCCCCCC(C)CCCCCCCCCCN CNIOLGKULFPBMJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Description
少するので、基板1に温度分布が生じることを抑制することができる。すなわち、基板1の外周部の温度が特に高くなって、基板1に大きな温度分布が発生することを抑制することができる。したがって、基板1の温度分布を均一化することができる。隙間15の幅を調整することにより(つまり、ポケット4の径方向におけるスペーサ14の寸法を調整することにより)、基板1の表面の温度分布を最適化することができる。
、熱伝導率が低くなるような構成とすればよい。たとえば、スペーサ14を、支持部材11の支持部12が形成されている位置の反対面側にスペーサ14が接触する面積を減少させた形状や、支持部材11の支持部12が形成されている位置に相当する部分の空隙率を向上させた形状とすることができる。
外周部はデバイスとして使用しないので、支持部12が基板1の外周部の有限の幅を有する部分と接触する構成にすることにより、基板1の支持部12と接触している部分における温度勾配がデバイスの性能に影響を与えることを、抑制することができる。
ポケットの底部が通常のフラットな形状に成形されているサセプタに、GaN基板をセットし、GaN基板の表面にエピタキシャル成長させて青色LEDを作製した。サセプタはSiCコートしたカーボン製で、カーボン製の抵抗加熱ヒータにより加熱される。サセプタは公転を行なう。石英からなる反応管(チャンバ)の中に原料ガスを流し、加熱された基板上に青色LEDを構成する半導体層をエピタキシャル成長する。GaN基板は直径2インチで厚みは約0.35mmのものを用いた。
従来例1でみられた基板1中心部での基板1とサセプタ202との接触を避けるために、ポケット204内の外周部に石英製のリングを挿入した。図14は、従来例2のサセプタに基板を充填し加熱した場合を示す模式図である。図12に示す従来例1の構成に対し、サセプタ202のポケット204の内部に、基板1を支持する石英リング211が加えられている点で異なるが、その他の構成は従来例1と同じである。石英リング211は幅(基板1の径方向であって、図14に示す左右方向の寸法)を1.0mmとし、厚み(ポケット204の深さ方向であって、図14に示す上下方向の寸法)を0.2mmとした。このサセプタ202を用いて、従来例1と同様の基板1表面へのエピタキシャル成長を行なった。
従来例2の石英リング211を挿入した場合の基板1の表面の温度分布を、輻射熱伝達
計算で導出した。図16は、従来例3の計算モデルを示す図である。計算は図16に示すような中心軸対象モデルとし、基板1に関し、その半径に相当する長さ(25mm)について、二次元での計算を行なった。サセプタ202の、基板1の半径方向に相当する方向の寸法は30mmとし、基板1の厚み方向に相当する方向の寸法は7.6mmとした。基板1の厚みは0.35mmとし、石英リング211は幅(基板1の径方向の寸法)1.0mm、厚み(基板1の厚み方向の寸法)0.2mmとした。また、サセプタ202の裏面側にあたる辺の温度は1000℃で一定とし、サセプタ202の外周側にあたる辺は断熱されているとした。基板1とサセプタ202との隙間には、原料ガスのアンモニアが満たされていると仮定した。
図18は、実施例1の計算モデルを示す図である。図3に示す支持部材11およびスペーサ14の構成を用いた場合の、基板1の表面の温度分布を、輻射熱伝達計算で導出した。図16に示す従来例3の計算モデルと同様に、基板1の半径に相当する長さ(25mm)についての二次元計算を行なった。サセプタ2に関するサイズおよび境界条件は従来例3と同じとした。計算は、スペーサ14の半径方向の寸法(X)を変化させることによって、サセプタ2と支持部材11との間の隙間15の幅、すなわち基板1の半径方向における隙間15の寸法を調整し、基板1の温度分布の最適化を試みた。
図20は、実施例2の基板がサセプタに保持されている状態を示す模式図である。図21は、実施例2のスペーサの側面図である。図20に示す支持部材11は、実施例1と同じく材質は石英とし、サイズも実施例1と同じものを用いた。サセプタ2、スペーサ14は、SiCコートしたカーボン製とした。図20および図21に示すように、平面形状円形のスペーサ14の外径は50.2mmであり、サセプタ2のポケット4の内部にちょうどはまり込むサイズとし、ポケット4の内部でスペーサ14の位置ずれが発生しない構造とした。スペーサ14の表面の外周部を除く部分には、表面がテーブル状に突起した平面形状円形の段差部14aが形成されており、支持部材11は段差部14a上に設置された。これにより、支持部材11が基板1と対向する面と反対側の面である支持部材11の反対面側において、支持部材11とサセプタ2との間に、基板1の厚み方向の寸法0.2mmである隙間15が形成される構造とした。図21に示すスペーサ14の段差部14aの半径方向の寸法(φA)を変えることによって、隙間15の幅を変えることが出来る構成とした。
原料ガス供給口、8 排気口、11 支持部材、12 支持部、13,15 隙間、14 スペーサ、14a 段差部、25 充填材、100 半導体発光素子、101 n型窒化物半導体層、103 p型窒化物半導体層、104 透明電極、105 p側電極パッド、106 n型電極パッド、107 保護膜、110 半導体発光素子、113 n型窒化物半導体層、115 p型窒化物半導体層、117 発光層、127 基板、131 バッファ層、133 コンタクト領域、135 アノード電極、137 カソード電極、202 サセプタ、204 ポケット、211 石英リング。
Claims (5)
- 基板を保持するサセプタと、
前記サセプタの前記基板を保持する面と反対側の裏面側に設置されている、前記基板を加熱する加熱部材と、
前記基板と前記サセプタとの間に位置し、前記基板を支持する支持部を有する支持部材と、
前記サセプタと前記支持部材との間に位置し、前記支持部材の前記支持部が形成されている位置の反対面側において開口部が形成されている、スペーサとを備え、
前記開口部には、前記スペーサに対し熱伝導率の低い材料が充填されており、
前記支持部は、前記基板の外周部を支持する、半導体装置の製造装置。 - 前記支持部は、少なくとも3箇所の突起によって形成されている、請求項1に記載の半導体装置の製造装置。
- 請求項1または請求項2に記載の製造装置を用いた、半導体装置の製造方法であって、
前記サセプタに前記基板を搭載する工程と、
前記加熱部材により、前記基板を加熱する工程とを備える、半導体装置の製造方法。 - 半導体は、窒化物系化合物半導体である、請求項3に記載の半導体装置の製造方法。
- 前記半導体装置は、半導体発光素子である、請求項4に記載の半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2007239262A JP5169097B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体装置の製造装置および製造方法 |
TW097132592A TW200931586A (en) | 2007-09-14 | 2008-08-26 | Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate |
EP08015949A EP2037485B1 (en) | 2007-09-14 | 2008-09-10 | Fabrication apparatus and fabrication method of semiconductor device produced by heating a substrate |
KR1020080089888A KR101048459B1 (ko) | 2007-09-14 | 2008-09-11 | 기판을 가열하여 제조하는 반도체 장치의 제조 장치 및 제조 방법 |
US12/209,397 US8153454B2 (en) | 2007-09-14 | 2008-09-12 | Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate |
CN2008101608080A CN101388330B (zh) | 2007-09-14 | 2008-09-16 | 通过加热衬底生产的半导体器件的制造设备和制造方法 |
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JP2007239262A JP5169097B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体装置の製造装置および製造方法 |
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US (1) | US8153454B2 (ja) |
EP (1) | EP2037485B1 (ja) |
JP (1) | JP5169097B2 (ja) |
KR (1) | KR101048459B1 (ja) |
CN (1) | CN101388330B (ja) |
TW (1) | TW200931586A (ja) |
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JP5359698B2 (ja) * | 2009-08-31 | 2013-12-04 | 豊田合成株式会社 | 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体 |
US8535445B2 (en) * | 2010-08-13 | 2013-09-17 | Veeco Instruments Inc. | Enhanced wafer carrier |
JP5644256B2 (ja) | 2010-08-20 | 2014-12-24 | 豊田合成株式会社 | 化合物半導体の製造装置及び化合物半導体の製造方法 |
JP5527106B2 (ja) * | 2010-08-25 | 2014-06-18 | 東京エレクトロン株式会社 | 真空処理装置 |
JP4980461B1 (ja) * | 2010-12-24 | 2012-07-18 | 三井造船株式会社 | 誘導加熱装置 |
KR101855217B1 (ko) * | 2010-12-30 | 2018-05-08 | 비코 인스트루먼츠 인코포레이티드 | 캐리어 연장부를 이용한 웨이퍼 처리 |
WO2013033315A2 (en) * | 2011-09-01 | 2013-03-07 | Veeco Instruments Inc. | Wafer carrier with thermal features |
KR101928356B1 (ko) * | 2012-02-16 | 2018-12-12 | 엘지이노텍 주식회사 | 반도체 제조 장치 |
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2007
- 2007-09-14 JP JP2007239262A patent/JP5169097B2/ja not_active Expired - Fee Related
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2008
- 2008-08-26 TW TW097132592A patent/TW200931586A/zh unknown
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Also Published As
Publication number | Publication date |
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CN101388330A (zh) | 2009-03-18 |
US8153454B2 (en) | 2012-04-10 |
EP2037485B1 (en) | 2011-05-11 |
EP2037485A1 (en) | 2009-03-18 |
JP2009071122A (ja) | 2009-04-02 |
TW200931586A (en) | 2009-07-16 |
CN101388330B (zh) | 2011-02-09 |
KR101048459B1 (ko) | 2011-07-12 |
KR20090028448A (ko) | 2009-03-18 |
US20090075409A1 (en) | 2009-03-19 |
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