CN103153527A - 半导体装置接合材料 - Google Patents

半导体装置接合材料 Download PDF

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Publication number
CN103153527A
CN103153527A CN2011800483656A CN201180048365A CN103153527A CN 103153527 A CN103153527 A CN 103153527A CN 2011800483656 A CN2011800483656 A CN 2011800483656A CN 201180048365 A CN201180048365 A CN 201180048365A CN 103153527 A CN103153527 A CN 103153527A
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Prior art keywords
porous metal
metal bodies
solder
semiconductor device
solder bonds
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CN2011800483656A
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CN103153527B (zh
Inventor
坂本善次
山田博之
山中芳惠
大西司
吉川俊策
田所健三
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Senju Metal Industry Co Ltd
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Senju Metal Industry Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/08—Soldering by means of dipping in molten solder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
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    • B23K35/302—Cu as the principal constituent
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C22C1/08—Alloys with open or closed pores
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明提供一种半导体装置，其将接合材料用于半导体装置的内部接合用，从而在基板安装时内部接合部不熔融，所述接合材料是由Sn或Sn系焊料合金填充到具有网眼结构的多孔金属体的空孔部分且覆盖其表面而得到的。

Description

半导体装置接合材料
技术领域
本发明涉及用于半导体装置的焊料接合材料，特别涉及将功率半导体(例：功率二极管)、内部具有微小布线的半导体芯片等的需要散热的半导体元件接合于基板的接合材料、以及用这样的接合材料接合半导体元件而得到的基板。
背景技术
作为半导体装置的代表性例子，可以列举出在作为由Cu或42合金形成的基板的框架上载置半导体芯片(硅芯片)的半导体器件。在硅芯片和框架之间用Au线进行引线接合(wirebonding)。另一方面，框架和硅芯片的接合有时也使用环氧系的导电性粘接剂，但通常为由导热性高、散热效果高的焊料进行的接合。这样的接合也称为半导体装置的内部接合。
半导体器件是在组装成电子设备时安装于印刷电路板的，此时再次接受回流焊的加热。在这时，需要使前面进行的内部接合的焊接部在该回流焊时的回流温度下不熔。因此，用于半导体器件的内部接合的焊料使用的是熔融温度比用于印刷电路板的安装的焊料更高的焊料合金。这样的半导体器件自身也能构成半导体装置，但这样的半导体器件进一步与电路基板连接再构成大的半导体装置。以下，将这样的进行半导体装置的内部接合的焊接的焊料称为“高温焊料”。
以往的高温焊料是熔融温度为300℃前后的Pb基的焊料合金。
可用于半导体装置的内部接合的高温焊料，有Pb-10Sn(固相线温度268℃、液相线温度302℃)、Pb-5Sn(固相线温度307℃、液相线温度313℃)、Pb-2Ag-8Sn(固相线温度275℃、液相线温度346℃)、Pb-5Ag(固相线温度304℃、液相线温度365℃)等，主要以Pb为主要成分。这些高温焊料均是固相线温度为260℃以上。因此，在印刷电路板的安装用焊接时使用例如63Sn-37Pb共晶焊料的情况下，即使此时的焊接温度为略高的230℃，用Pb-10Sn等高温焊料焊接而成的半导体装置的内部接合的焊接部，不会在印刷电路板上的安装焊接时发生熔融。
不过，从环境保护的观点出发，最近在整个焊接技术中，谋求使用无Pb焊料合金来代替Pb系焊料合金。
当然，即使对于以往的半导体装置的内部接合所使用的前述那样的Pb-Sn系高温焊料，也谋求无Pb焊料合金的使用。
然而，对于无Pb焊料合金，迄今为止提出了各种方案，但没有以Sn为主要成分且固相线温度为260℃以上的高温焊料合金。例如，在固相线温度(共晶温度)为221℃的Sn-Ag系焊料合金中，即使增加Ag，液相线温度上升，固相线温度却不上升。在固相线温度为227℃的Sn-Sb系焊料合金中，在为了提高固相线温度而极度增加Sb时，液相线温度也会极度上升。并且，即使向其中添加其它元素，也不能改变这样的特性。
因此，一直以来认为无Pb焊料合金不能作为半导体装置的内部接合用的高温焊料来使用。
作为不使用该高温焊料合金的接合技术研究出的方法为用与以Sn为主要成分的无铅焊料相比熔融温度高的金属间化合物进行接合。
在专利文献1中公开了使用将Sn或以Sn为主要成分的无铅焊料粉末和Cu粉末混合而成的焊膏(solder paste)的方法。在熔融接合时形成Sn-Cu金属间化合物来进行接合。
在专利文献2中作为专利文献1记载的发明的一个形态公开了，将Sn或以Sn为主要成分的无铅焊料粉末和Cu粉末压延制成焊料箔的焊料材料。
现有技术文献
专利文献
专利文献1：日本特开2002-254194号公报
专利文献2：日本特开2002-301588号公报
发明内容
发明要解决的问题
如已述那样，用于半导体装置的内部接合的接合材料或由其得到的内部接合部，要求比用于印刷电路板的安装的焊料合金的熔融温度更高，然而，尚不知有可实现该要求的以Sn为主要成分且固相线温度为260℃以上的高温焊料合金。
虽然对比文献1中提出了将Sn或以Sn为主要成分的无铅焊料粉末和Cu粉末混合而成的焊膏，但是在焊膏的熔剂中必定含有溶剂，所以以焊膏的形态使用时，在加热时熔剂中的溶剂挥发，存在易发生气孔(voids)的倾向。尤其在微小布线的半导体装置中，该气孔成为可靠性降低的原因。
专利文献2中的粉末压延材料可解决由溶剂的挥发产生的气孔的问题。但是，由于粉末表面积大，易氧化，因而在Sn、Cu的粉末的制造时，粉末表面已经形成了氧化膜，即使如专利文献2那样在非活性气氛下进行焊料的压延作业也不能去除粉末表面的氧化物。另外，在仅将粉末压延时无论如何也不能用焊料完全填充间隙，易出现空隙。
专利文献2中，由于即使不使用熔剂而是在氢气等还原气氛下进行焊接，在焊料的压延前产生了的粉末表面的氧化物也进入到焊料箔内部，因此在氢气等还原气氛的情况下，无法连焊料箔内部的氧化物也去除，存在引起焊料的润湿不良，易发生气孔这样的问题点。
本发明要解决的课题在于，提供不使用熔剂且不发生气孔、润湿性优异的半导体装置的内部接合用接合材料。
进而，本发明的课题在于，提供在安装到基板时内部接合部也不熔融的半导体装置。
用于解决问题的方案
本发明人等关注到复合材料通常高温特性优异，得到使用复合材料进行内部接合这样的构想，进而反复研究发现采用具有网眼状结构的多孔金属薄板作为复合材料的基材，在其中使焊料合金、尤其使无Pb焊料合金浸渗复合化而得到的焊料接合材料用于半导体装置的内部接合特别有效，从而完成了本发明。
因此，最广义而言，本发明为使Sn或Sn系的无铅焊料熔融填充到具有网眼状结构的多孔金属体中后使其凝固而得到的半导体装置的内部接合用的焊料接合材料、以及使用其而得到的半导体装置。
这里，作为上述复合材料的基材的“具有网眼状结构的多孔金属体”是指“具有多孔结构，构成多孔结构的孔连通成网眼状，这样的连通孔的至少一部分暴露在金属体表面的多孔金属体”。通常为呈薄板状的多孔金属体。本发明使用的多孔金属体显示导电性以及导热性。
现在，多孔金属是通过将以往的块状金属多孔化而以轻量化、过滤效果为目的而开始制作。也提出有应用到导电材料的方案。电越是高频，越是通过导体表面，因而与块状的金属相比，表面积大的多孔金属在相同电流量下每单位面积的电流量少，因此发挥电阻的降低、功率耗损的防止效果，以此为目的使用。本发明中也可以以这样的市售的多孔金属体作为起始材料使用。
发明的效果
根据本发明，使用新型的接合材料能够使半导体装置的内部接合成为可能，在半导体装置的内部接合中也可以实现无Pb化。
进而，根据本发明，与使用焊料粉末形成金属间化合物的接合材料相比，可以得到气孔少的可靠性高的内部接合部。
另外，根据本发明，通过预先使Sn或Sn系的无铅焊料边熔融边浸渗到表面积多的多孔金属体，从而构成多孔金属体的金属与Sn在其边界部密合性增高，可明显改善导电性、导热性。而且，即使在内部接合时降低加热温度、或缩短加热时间，也可生成和确保焊料合金中的Sn和被接合部金属(Ni、Cu等)的足够量的金属间化合物，因此接合部的熔点上升，可实现半导体装置的安装时内部接合部的熔融温度的高温化。
附图说明
图1的(a)和图1的(b)分别为使用本发明的接合材料的半导体装置的内部结构以及接合材料的示意性说明图。
图2为本发明的实施例1的在多孔金属中熔融填充Sn而成的接合材料的截面显微镜组织图。
图3为比较例1的用Sn将Cu片焊接而成的接合材料的截面显微镜组织图。
图4为比较例7的在孔隙率高的多孔金属中熔融填充Sn而成的接合材料的截面显微镜组织图。
具体实施方式
图1的(a)为本发明的半导体装置的示意性说明图，本发明的接合材料1夹设在硅芯片(IC芯片)2和设置于绝缘基板3上的Ni/Au镀覆层3a之间并使两者内部接合；进而该组装体夹着在其背面设置有绝缘基板3的Ni/Au镀覆层4a而内部接合于Cu基底基板4上，从而构成半导体装置。
IC芯片2与Ni/Au镀覆层3a的接合利用的是本发明的接合材料的良好的导热性。另一方面，绝缘基板3和Cu基底基板4的接合是为了取得电极或连接端子的导通而且实现散热。本发明的接合材料也可用于这样的散热、导通的任意目的。
需要说明的是，有时仅将IC芯片2内部接合到绝缘基板3而得到的上述组装体也称为半导体装置。
这样内部接合而得到的半导体装置，进一步安装到印刷电路板等，构成电源装置等电子设备。
图1的(b)为用接合材料1将IC芯片2和Ni/Au镀覆层3a、或将Ni/Au镀覆层4a和Cu基底基板4接合时的接合部的放大示意图。绝缘基板3中通常设置有Ni/Au镀覆层3a、和Ni/Au镀覆层4a。接合材料1由多孔金属体5和金属间化合物6构成，显示出加热接合后的高温化状态。在接合前的多孔金属体的内部填充有Sn或Sn系焊料，通过接合时的加热而生成Sn的金属间化合物，作为单质存在的Sn消失，因此进行熔点的高温化。
本发明的半导体装置具备使由硅芯片发生的热迅速散热到Cu基底基板的构造，可用于微小布线图案的半导体、功率半导体等的在电的导通的同时易发生热的部件的用途。在这种用途中IC芯片和绝缘基板、绝缘基板和Cu基底基板的接合部分，易变为高温，以往在接合中使用高温焊料。
本发明由于使用Sn的金属间化合物的接合来代替高温焊料的接合，因此这样的接合部位形成由具有网眼状结构的多孔金属体构成其主体的构造。
如已述那样，本发明的接合材料通过使Sn或Sn系的无铅焊料熔融填充到具备网眼结构的连通孔的多孔金属体而制造。
本发明的半导体装置只要是进行内部接合的装置就没有特别的限制，具体而言示例出功率半导体装置。
本发明的接合机理：
根据本发明，在构成半导体装置的半导体元件和基板的接合部形成Sn的金属间化合物。更详细而言，通过熔融填充到具有网眼状结构的多孔金属的Sn或Sn系的无铅焊料与构成多孔金属的金属反应，进一步上述无铅焊料与设置于接合面的Cu或Ni镀覆层反应，由此形成接合部。这些反应分别是在使熔融焊料合金浸渗于多孔金属体时以及进行内部接合时发生的。
在与半导体元件、基板接合时，它们的接合面与构成多孔金属体的骨架的、例如Cu-10Sn合金等金属面，介由填充多孔部分的无铅焊料合金层而相对向。在这样的接触状态下加热时，二者接合面被焊料润湿，并且通过与Sn的反应而生成金属间化合物。
在本发明的接合材料中，在多孔金属体和在其中熔融填充了的Sn或Sn系的无铅焊料合金之间的边界部，形成非常薄的金属间化合物层，由于实质上不存在表面氧化皮膜，可得到气孔少的可靠性高的内部接合部，并且通过接合时的加热，金属间化合物的生成反应变得容易，促进与Sn的金属间化合物的生成，其结果是实质上不残留作为单质的Sn。
此处，使用了Sn的金属间化合物的接合，需要化合物形成反应迅速地进行。以往，如专利文献1和2那样，通过以粉末形式使用Sn系焊料和Cu，增加Sn和Cu的表面积，从而促进了Sn和Cu的金属间化合物形成反应，但如果此时为了提高反应性而使用微细的粉末的话，则存在Sn和Cu的粉末容易氧化，气孔增加的问题点。
本发明改善了这样的问题。本发明中，使用由具有网眼状结构的多孔金属体和在其中熔融填充的Sn或Sn系的无铅焊料合金构成的接合体来代替微细的Sn和Cu粉末。
多孔金属体：
本发明中使用的多孔金属体可以将市售的产品作为原料来利用。根据需要，也可以将市售品压延至规定厚度，并且调整孔隙率。
多孔金属体可以由以下等方法制造：对发泡聚氨酯实施导电性处理，进行镀覆后，加热去除聚氨酯的“镀覆法”；使包含发泡聚氨酯的金属粉末浆料直接发泡，然后进行脱脂烧结的“浆料发泡法”；以及将金属粉末浆料涂布于发泡聚氨酯，烧结并去除聚氨酯的“浆料涂布法”。
本发明中使用的具有网眼状结构的多孔金属体的金属只要是通过与Sn的反应而生成金属间化合物的金属就可使用，作为例子可列举出Cu、Ag、Ni和青铜等Cu合金。将通过各种金属与Sn的反应而形成的金属间化合物示于表1中。特别优选容易与Sn发生反应的Cu和Cu合金。
作为这样的纯铜和Cu含量为90%以上的Cu合金，可以示例出脱氧铜(deoxidized copper)、韧铜(tough pitch copper)、磷脱氧铜等铜材料，CAC101、CAC102、CAC103等铸造用铜、在Cu中添加了Sn、Zn等的青铜等铜合金。用于具有网眼状结构的多孔金属的Cu合金的Cu含量小于90%时，阻碍与填充于多孔金属的Sn或Sn系的无铅焊料的金属间化合物生成反应，因而不优选。优选纯铜和Cu含量为90%以上的Cu合金。
[表1]
Figure BDA00003011375200091
浸渗方法：
在本发明的情况下，多孔金属体具有与多孔体表面连通的孔洞结构，具有网眼状结构，因而仅将该多孔金属体浸渍于熔融焊料浴中，就可以使焊料浸渗直至孔洞结构的内部。若在真空气氛下进行这样的浸渗处理，则可以更有效地使熔融焊料浸渗直至内部。
在卷材这样的长条材料的情况下，优选在非活性气体气氛或真空气氛下连续地使其浸渍于熔融焊料浴中，接着提起，由此可使熔融焊料浸渗到空孔内。该情况下，通过调整长条材料的移动速度，可调整多孔金属体表面的熔融焊料的附着量，即接合材料的厚度。多孔金属体的表面整体被焊料合金薄薄地覆盖。不言而喻此时在熔融焊料合金和多孔金属体表面的界面生成金属间化合物，两者的接合强度、即密合力提高。
作为浸渗的焊料合金只要是无Pb，就没有特别的限制，在这种用途中优选Sn单质金属、Sn-Ag焊料合金、Sn-Ag-Cu焊料合金。
本发明中，焊料合金的量至少为可填充多孔金属体的空孔部、并覆盖表面这样的量，例如在板状多孔金属体的情况下为覆盖一面或两面的表面这样的量。相对于多孔金属体，焊料合金所占的比例优选为20～30面积%。
多孔金属体的板厚以及孔隙率：
本发明的接合材料虽然构成为薄板状，但在使用时切割为规定形状，按照与所谓的焊料预成形坯同样的形态使用。即，本发明的接合材料例如夹设于半导体元件和基板的接合面之间而组装，通过将其用回流炉加热，进行焊料接合。因此，本发明的接合材料优选上述多孔金属体的板厚为0.1mm以上且0.2mm以下。优选本发明所使用的具有网眼状结构的多孔金属体的孔隙率、即焊料合金的填充率为20～30面积%。
在本发明中，在Cu或Cu合金的具有网眼状结构的多孔金属体中浸渗Sn或Sn系的无铅焊料时，孔隙率为20～30%(以面积比例表示)时，由于形成Cu3Sn和Cu6Sn5，Sn消失，可进行接合部的熔点的高温化。孔隙率超过30%时，低熔点相的Sn残留，未实现高温化。从高温化的观点考虑，为了使Sn单质相、即Sn固溶体相消失，也为了提高气孔等的接合性，孔隙率优选为20～30面积%。
如已述那样，本发明所使用的多孔金属体使用市售品即可，由于多数市售品的厚度为1～0.5mm左右，且孔隙率为60%左右，因此在使用这样的市售品的情况下，本发明中在使熔融焊料浸渗前，优选调整为所期望的厚度以及孔隙率。这样的调整通过压延进行即可。
本发明的焊料接合材料中多孔金属体和焊料层的总计厚度没有特别的限制，根据需要适宜设定厚度即可，通常为0.1～0.5mm左右，优选为0.15～0.3mm。可以仅在单面附着焊料层，通常为两面被焊料层覆盖。
使用本发明的焊料接合材料进行半导体装置的内部接合时，例如可以夹着焊料接合材料使半导体元件与绝缘基板、或使绝缘基板和基底基板重合，加热该层叠组装体，以无熔剂进行接合。对此时的加热条件没有特别的限制，若列举出一个例子，则在选自非活性气体气氛、还原性气体气氛和减压气氛的任一种气氛下，在300℃以上且350℃以下加热5分钟以上。
接着，通过实施例对本发明进一步具体说明。
实施例1
在880℃的还原气氛下烧结福田金属(Fukuda Metal Foil&Powder Co.,Ltd.)制造的磷青铜粉末(商品名P-201)，准备多孔金属体(板长度：1m、宽度15mm、厚度：0.1mm、孔隙率：25%)，在250～260℃下使其浸渍于各种焊料浴中，使无铅焊料浸渗到空孔中。熔融焊料的浸渗中不使用熔剂，通过在焊料浴中实施超声波处理，去除多孔金属体的氧化皮膜，防止气孔发生。使用的多孔体的孔洞结构是连续孔连通为网眼状，在板表面具备开口部。
接合材料的厚度、即金属体厚度+焊料附着量，是通过将多孔金属体从焊料浴中取出的速度进行控制的，调整为焊料合金层和多孔金属体的总计的厚度为0.15～0.2mm。焊料合金层的厚度为0.05～0.1mm。
用压力机将得到的接合材料冲切成3mm×3mm的大小，使用其夹着该接合材料将硅芯片载置于Cu板上进行组装。将所得到的组装体在模拟回流条件的条件下保持后，进行冷却，用显微镜观察接合部截面，并且测定接合强度。
接合在Cu板上的原因是由于框架由经过Ni镀覆的Cu合金板形成，因此用Cu板模拟框架。
图2为表2的实施例1中使用的接合材料的截面显微镜组织图(倍率：500倍)。
可知多孔金属体5被熔融填充的焊料合金7包围。确认到两者之间存在Cu6Sn5金属间化合物和Cu3Sn金属间化合物。但是，确认到以焊料合金、特别是表面部分以焊料合金形式存在。
图3为表2的比较例1中使用的不具有多孔结构(孔隙率0%)的接合材料的截面显微镜组织图(倍率：500倍)。可知块状金属(Cu)体8和焊料(Sn)层7整齐地层叠。
图4为表2的比较例4中使用的孔隙率35%以上的接合材料的截面显微镜组织图(倍率：500倍)。由于多孔体金属体9的孔隙率大，焊料(Sn)7的填充量相应地变多，最终在构成接合部时，作为焊料成分的Sn以单质形式存在，因而熔融温度的降低是不可避免的。
[表2]
Figure BDA00003011375200131
表2中记载的孔隙率是从多孔金属体的截面图像检测空孔部进行测定的。因此，“孔隙率”以面积率表示。用于检测的图像解析软件是使用Soft Imaging System制造的Scandium。在图像中，金属部和空孔部的对比度不同，因此可通过图像解析来识别，通过仅检测空孔部进行测定。
实施例2
从实施例1制造的接合材料冲切出5mm见方的接合材料，用高温炉将其接合于10mm见方的Cu板或Ni镀覆Cu板，从而使其形成Sn-Cu的金属间化合物，重现接合部。
接合时使用米仓制作所制造的高温观察装置IrF-TP，在加热温度350℃、15分钟的条件下加热。
测定这样得到的接合部的金属间化合物(IMC)的生成量。测定方法为：使用日本电子株式会社制造的扫描电子显微镜JSM-7000F，从接合部截面检测化合物存在区域，测量检测出的面积，作为生成的化合物量(μm2)。将结果示于表2中。
同样地测定上述接合部的气孔率。测定方法为：使用东芝制造的X射线透射装置TOSMICRON，检测气孔部，作为气孔相对于接合部整体的面积的比率表示。
将结果示于表2中。
测定实施例1中制造的本发明的接合部材料的接合强度以及熔融温度。
接合强度的测定法依照JIS Z3198-5。其中，将本发明的接合材料(3mm见方的大小)载置于30mm见方的Cu板上，进一步在其上载置作为测定片的3mm见方、厚度1mm的Cu芯片，将其加热接合。
测量是使用RHESCA Corporation Limited制造的接头强度试验机STR-1000，在剪切速度为6mm/分钟、试验温度为室温至250℃下进行。
熔融温度的测定法依照JIS Z3198-1。热分析的条件是使用Seiko Instruments Inc.制造的差热分析装置DSC6200确认了在升温速度5℃/分钟、180～280℃之间的接合加热后的熔点。接合部试样使用与用于强度试验的试样相同的试样。
将结果示于表2中。
实施例3
使用实施例1制造的接合材料(参照表2的实施例1)，如图1所示那样将硅芯片接合于绝缘板，进一步将其接合于Cu基板，构成半导体装置。接着，在回流温度240℃下将该半导体装置安装于印刷电路板上。
安装时，半导体装置的内部接合部没有熔融。
附图标记说明
1.接合材料
2.IC芯片
3.绝缘基板
4.基底基板
5.多孔金属体
6.金属间化合物
7.无Pb焊料
8.块状金属体(孔隙率0%)
9.多孔金属体(孔隙率35%以上)

Claims (10)

1.一种焊料接合材料，其由具有网眼结构的多孔金属体、和填充于该多孔金属体的空孔部分并且覆盖了该多孔金属体表面的Sn或Sn系焊料合金构成，所述多孔金属体显示导电性。
2.根据权利要求1所述的焊料接合材料，其中，所述多孔金属体由选自通过与Sn反应生成金属间化合物的Cu、Ni、Ag和Cu含量在90质量%以上的Cu合金组成的组中的至少一种构成。
3.根据权利要求1或2所述的焊料接合材料，其特征在于，相对于所述多孔金属体，Sn或Sn系焊料合金所占的比例以面积%计为20%以上且30%以下。
4.根据权利要求1～3中任一项所述的焊料接合材料，其中，所述多孔金属体的厚度为0.1mm以上且0.2mm以下，包含Sn或Sn系焊料合金层在内的整体的厚度为0.15～0.3mm，该焊料接合材料用于半导体装置的内部接合。
5.根据权利要求1～4中任一项所述的焊料接合材料，其使用孔隙率以面积率计为20%以上且30%以下的多孔金属体作为多孔金属体。
6.根据权利要求1所述的焊料接合材料的制造方法，其包括：
将多孔金属体浸渍于Sn或Sn系焊料合金熔融浴中，在构成该多孔金属体的从内部连通到表面的孔洞构造内填充熔融Sn或Sn系焊料，且使其覆盖该多孔金属体表面；
将所述多孔金属体从Sn或Sn系焊料合金熔融浴中取出；以及
使填充到所述多孔金属体并覆盖该多孔金属体的熔融Sn或Sn系焊料合金凝固。
7.一种半导体装置，其特征在于，其为至少具备接合半导体元件和绝缘基板的焊料接合部的半导体装置，该焊料接合部使用权利要求1～5中任一项所述的焊料接合材料进行接合。
8.根据权利要求7所述的半导体装置，其中，所述接合部中Sn单质相消失。
9.根据权利要求7或8所述的半导体装置，其中，所述接合部在260℃下不熔融。
10.一种半导体装置的内部接合方法，其为使用根据权利要求1～5中任一项所述的焊料接合材料至少接合半导体元件和绝缘基板的半导体装置的接合方法，在选自非活性气体气氛、还原性气体气氛和减压气氛的任一种气氛下，在300℃以上且350℃以下加热5分钟以上，以无熔剂进行接合。
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