CN103135649B - 恒压电路 - Google Patents

恒压电路 Download PDF

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Publication number
CN103135649B
CN103135649B CN201210477602.7A CN201210477602A CN103135649B CN 103135649 B CN103135649 B CN 103135649B CN 201210477602 A CN201210477602 A CN 201210477602A CN 103135649 B CN103135649 B CN 103135649B
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CN
China
Prior art keywords
transistor
voltage
circuit
output
generation circuit
Prior art date
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Active
Application number
CN201210477602.7A
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English (en)
Chinese (zh)
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CN103135649A (zh
Inventor
矢野祐马
田岛章光
近藤英晃
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Socionext Inc
Original Assignee
Fujitsu Semiconductor Ltd
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Publication of CN103135649A publication Critical patent/CN103135649A/zh
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dc-Dc Converters (AREA)
CN201210477602.7A 2011-11-24 2012-11-21 恒压电路 Active CN103135649B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-256044 2011-11-24
JP2011256044A JP5867012B2 (ja) 2011-11-24 2011-11-24 定電圧回路

Publications (2)

Publication Number Publication Date
CN103135649A CN103135649A (zh) 2013-06-05
CN103135649B true CN103135649B (zh) 2015-03-18

Family

ID=48466238

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210477602.7A Active CN103135649B (zh) 2011-11-24 2012-11-21 恒压电路

Country Status (3)

Country Link
US (1) US9188998B2 (ja)
JP (1) JP5867012B2 (ja)
CN (1) CN103135649B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5714924B2 (ja) * 2011-01-28 2015-05-07 ラピスセミコンダクタ株式会社 電圧識別装置及び時計制御装置
US9081404B2 (en) * 2012-04-13 2015-07-14 Infineon Technologies Austria Ag Voltage regulator having input stage and current mirror
JP6083269B2 (ja) * 2013-03-18 2017-02-22 株式会社ソシオネクスト 電源回路及び半導体装置
KR102669176B1 (ko) 2017-01-03 2024-05-27 삼성전자주식회사 누설 전류 감지 장치 및 메모리 장치
CN112799456B (zh) * 2019-11-14 2022-05-17 厦门市必易微电子技术有限公司 电压变换电路及方法以及升降压变换电路
US20230273637A1 (en) * 2020-09-07 2023-08-31 Semiconductor Energy Laboratory Co., Ltd. Control Circuit Of Secondary Battery And Electronic Device
CN115202425B (zh) * 2022-09-15 2022-11-22 成都市易冲半导体有限公司 串行通信总线超低电源电压检测的io设计电路及方法
CN115657780B (zh) * 2022-12-26 2023-03-10 江苏长晶科技股份有限公司 一种纳安级别消耗的低功耗ldo电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1701292A (zh) * 2003-08-29 2005-11-23 株式会社理光 恒压电路
JP2006309569A (ja) * 2005-04-28 2006-11-09 Ricoh Co Ltd 定電圧電源回路
CN101019415A (zh) * 2005-06-29 2007-08-15 罗姆股份有限公司 视频信号处理电路以及安装了该电路的电子设备
CN101341453A (zh) * 2006-06-14 2009-01-07 株式会社理光 恒压电路与控制恒压电路的输出电压的方法
CN101567628A (zh) * 2008-02-15 2009-10-28 精工电子有限公司 稳压器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100667A (en) * 1999-01-21 2000-08-08 National Semiconductor Corporation Current-to-voltage transition control of a battery charger
JP2001034349A (ja) * 1999-07-19 2001-02-09 Matsushita Electric Ind Co Ltd 内部降圧電源回路
JP4559643B2 (ja) 2000-02-29 2010-10-13 セイコーインスツル株式会社 ボルテージ・レギュレータ、スイッチング・レギュレータ、及びチャージ・ポンプ回路
US6188212B1 (en) * 2000-04-28 2001-02-13 Burr-Brown Corporation Low dropout voltage regulator circuit including gate offset servo circuit powered by charge pump
JP2004094788A (ja) 2002-09-03 2004-03-25 Seiko Instruments Inc ボルテージ・レギュレータ
US6861832B2 (en) * 2003-06-02 2005-03-01 Texas Instruments Incorporated Threshold voltage adjustment for MOS devices
JP4263068B2 (ja) 2003-08-29 2009-05-13 株式会社リコー 定電圧回路
JP2006134268A (ja) * 2004-11-09 2006-05-25 Nec Electronics Corp レギュレータ回路
JP4804156B2 (ja) 2006-02-01 2011-11-02 株式会社リコー 定電圧回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1701292A (zh) * 2003-08-29 2005-11-23 株式会社理光 恒压电路
JP2006309569A (ja) * 2005-04-28 2006-11-09 Ricoh Co Ltd 定電圧電源回路
CN101019415A (zh) * 2005-06-29 2007-08-15 罗姆股份有限公司 视频信号处理电路以及安装了该电路的电子设备
CN101341453A (zh) * 2006-06-14 2009-01-07 株式会社理光 恒压电路与控制恒压电路的输出电压的方法
CN101567628A (zh) * 2008-02-15 2009-10-28 精工电子有限公司 稳压器

Also Published As

Publication number Publication date
CN103135649A (zh) 2013-06-05
JP2013109699A (ja) 2013-06-06
US9188998B2 (en) 2015-11-17
US20130134954A1 (en) 2013-05-30
JP5867012B2 (ja) 2016-02-24

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
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Owner name: SUOSI FUTURE CO., LTD.

Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD.

Effective date: 20150514

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150514

Address after: Kanagawa

Patentee after: Co., Ltd. Suo Si future

Address before: Yokohama City, Kanagawa Prefecture, Japan

Patentee before: Fujitsu Semiconductor Co., Ltd.