CN103094272B - 用于静电保护的沟槽型绝缘栅场效应管结构 - Google Patents
用于静电保护的沟槽型绝缘栅场效应管结构 Download PDFInfo
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- CN103094272B CN103094272B CN201110340523.7A CN201110340523A CN103094272B CN 103094272 B CN103094272 B CN 103094272B CN 201110340523 A CN201110340523 A CN 201110340523A CN 103094272 B CN103094272 B CN 103094272B
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CN201110340523.7A CN103094272B (zh) | 2011-11-01 | 2011-11-01 | 用于静电保护的沟槽型绝缘栅场效应管结构 |
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CN103094272B true CN103094272B (zh) | 2015-08-19 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109979932B (zh) * | 2017-12-28 | 2020-11-10 | 无锡华润上华科技有限公司 | 一种静电放电保护器件 |
CN112271136A (zh) * | 2020-10-14 | 2021-01-26 | 上海维安半导体有限公司 | 一种触发式可控硅器件的制备方法及整流装置 |
CN116779662A (zh) * | 2023-08-22 | 2023-09-19 | 深圳芯能半导体技术有限公司 | 一种抗静电的igbt芯片及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1794451A (zh) * | 2004-11-15 | 2006-06-28 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN102054865A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | 用作静电保护结构的mos晶体管及其制造方法 |
CN102097431A (zh) * | 2009-12-10 | 2011-06-15 | 新唐科技股份有限公司 | 芯片及其静电放电保护元件 |
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CN1794451A (zh) * | 2004-11-15 | 2006-06-28 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN102054865A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | 用作静电保护结构的mos晶体管及其制造方法 |
CN102097431A (zh) * | 2009-12-10 | 2011-06-15 | 新唐科技股份有限公司 | 芯片及其静电放电保护元件 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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