CN102971851A - 固态图像拾取设备 - Google Patents
固态图像拾取设备 Download PDFInfo
- Publication number
- CN102971851A CN102971851A CN2011800334153A CN201180033415A CN102971851A CN 102971851 A CN102971851 A CN 102971851A CN 2011800334153 A CN2011800334153 A CN 2011800334153A CN 201180033415 A CN201180033415 A CN 201180033415A CN 102971851 A CN102971851 A CN 102971851A
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- China
- Prior art keywords
- bonding part
- image pickup
- state image
- pickup apparatus
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011229 interlayer Substances 0.000 claims description 58
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- 239000002184 metal Substances 0.000 claims description 50
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- 240000001439 Opuntia Species 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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Abstract
提供能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。该固态图像拾取设备具有:第一基板,具有设置在第一基板的主面上的光电转换器;第一布线结构,具有包含导电材料的第一接合部分;第二基板,在第二基板的主面上具有***电路的一部分;以及第二布线结构,具有包含导电材料的第二接合部分。此外,第一接合部分和第二接合部分被接合为使得第一基板、第一布线结构、第二布线结构以及第二基板依次设置。此外,第一接合部分的导电材料和第二接合部分的导电材料被扩散防止膜包围。
Description
技术领域
本发明涉及一种固态图像拾取设备的接合部分。
背景技术
在用于数字静物照相机、便携式摄像机等的CCD型和放大型固态图像拾取设备中,为了获得高清晰度图像,需要减小像素的尺寸。然而,随着像素的尺寸越来越减小,光电转换器的在像素中的检测光的光接收面积减小,并且灵敏度降低。
在PTL 1中,已经公开了一种固态图像拾取设备,其中,在作为放大型固态图像拾取设备的CMOS型固态图像拾取设备中,为了确保光电转换器的光接收区域,具有光电转换器和转移晶体管的第一基板和具有其它电路的第二基板彼此接合。在PTL 1中,对于该接合,针对每个像素使用铜接合焊盘。
[引文列表]
[专利文献]
[PTL1]日本专利公开No.2006-191081
发明内容
[技术问题]
然而,根据PTL 1中公开的接合方法,在一些情况下,铜可能从铜接合焊盘扩散到第一基板和/或第二基板。当该金属杂质在半导体区域中混合时,由此可能生成暗电流和/或泄漏电流,结果,在待获得的图像数据上生成白斑等。此外,当该金属杂质在形成晶体管的半导体区域中混合时,易于发生泄漏电流的生成和/或阈值的变化,结果,在一些情况下可能出现操作故障。具体地说,在具有好几万或更多像素(即好几万或更多接合部分)的固体图像拾取设备中,可能从这些接合部分产生严重污染。当具有高扩散系数的导电材料(如铜)用于接合部分时,以上描述的现象易于发生。
相应地,本发明提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
[问题的解决方案]
本发明的固态图像拾取设备包括:第一基板,具有设置在第一基板的主面上的光电转换器;第一布线结构,设置在第一基板的主面上并且具有包含导电材料的第一接合部分;第二基板,在第二基板的主面上具有包括控制电路和基于光电转换器的电荷而读出信号的读出电路的***电路的一部分;以及第二布线结构,设置在第二基板的主面上并且具有包含导电材料的第二接合部分,其中,第一接合部分和第二接合部分被彼此接合为使得第一基板、第一布线结构、第二布线结构以及第二基板依次设置,以及第一接合部分的导电材料和第二接合部分的导电材料被扩散防止膜包围。
[本发明的有益效果]
相应地,本发明可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
附图说明
图1是根据实施例1的固态图像拾取设备的示意性截面图。
图2A是根据实施例1的固态图像拾取设备的示意性平面图。
图2B是根据实施例1的固态图像拾取设备的示意性平面图。
图3是根据实施例1的固态图像拾取设备的电路图。
图4A是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图4B是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图5A是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图5B是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图6A是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图6B是示出用于制造根据实施例1的固态图像拾取设备的方法的步骤的示意性截面图。
图7A是根据实施例1的固态图像拾取设备的接合部分的示意性截面图。
图7B是根据实施例1的固态图像拾取设备的接合部分的示意性截面图。
图7C是根据实施例1的固态图像拾取设备的接合部分的示意性截面图。
图7D是根据实施例1的固态图像拾取设备的接合部分的示意性截面图。
图8A是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8B是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8C是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8D是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8E是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8F是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8G是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图8H是根据实施例2的固态图像拾取设备的接合部分的示意性截面图。
图9A是示出用于制造根据实施例2的接合部分的方法的步骤的示意性截面图。
图9B是示出用于制造根据实施例2的接合部分的方法的步骤的示意性截面图。
图9C是示出用于制造根据实施例2的接合部分的方法的步骤的示意性截面图。
图10A是根据实施例3的固态图像拾取设备的接合部分的示意性截面图。
图10B是根据实施例3的固态图像拾取设备的接合部分的示意性截面图。
图10C是根据实施例3的固态图像拾取设备的接合部分的示意性截面图。
图11A是示出根据实施例3的固态图像拾取设备的接合部分的示意性平面图。
图11B是示出根据实施例3的固态图像拾取设备的接合部分的示意性平面图。
图11C是示出根据实施例3的固态图像拾取设备的接合部分的示意性平面图。
具体实施方式
本发明的固态图像拾取设备具有:第一基板,在其主面上具有光电转换器;第一布线结构,具有第一接合部分,其中的每一个第一接合部分包含导电材料;第二基板,在其主面上具有***电路的一部分;以及第二布线结构,具有第二接合部分,其中的每一个第二接合部分包含导电材料。此外,第一接合部分和第二接合部分彼此接合,以使得第一基板、第一布线结构、第二布线结构以及第二基板被依次设置。在该固态图像拾取设备中,第一接合部分的导电材料和第二接合部分的导电材料被用于相应导电材料的扩散防止膜围绕。通过上述结构,导电材料甚至在接合之后被相应的扩散防止膜围绕,因此可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
下文中,将参照附图详细描述本发明。在该实施例中,第一基板的主面和第二基板的主面是在其上形成晶体管的基板表面。面对相应主面(主表面)的相反侧的面(相反侧的表面)是第一基板的背面(后表面)和第二基板的背面(后表面)。此外,向上方向表示从基板的背面朝向主面的方向,向下方向和深度方向均表示从基板的主面朝向背面的方向。在以下描述中,当第一基板和第二基板彼此接合时,第二基板的背面处于底面并且第一基板的背面处于顶面。
此外,通过单镶嵌方法(single damascene method)来形成具有单镶嵌结构(single damascene structure)的布线,在单镶嵌方法中,在层间绝缘膜中形成要被用于布线的槽,在槽中填充导电材料(如势垒金属或铜),以使得获得埋在层间绝缘膜中的布线。形成具有双镶嵌结构的布线以使得布线和通孔整体地形成以便被埋在层间绝缘膜中。也就是说,通过双镶嵌方法来形成具有双镶嵌结构的布线,在双镶嵌方法中,在层间绝缘膜中形成要用于布线和通孔的槽,在槽中填充导电材料(如势垒金属或铜)。
将参照图1至图6B描述本发明的实施例1。首先,将参照图3描述根据实施例1的固态图像拾取设备的电路。在该实施例中,举例描述其中信号电荷是电子的情况。图3所示的固态图像拾取设备具有:像素部分301,其中布置有多个光电转换器;以及***电路部分302,具有包括驱动从像素部分301读出信号的控制电路和处理读出信号的信号处理电路的***电路。
在像素部分301中,布置光电转换器303、转移晶体管304、放大晶体管306和重置晶体管307。包括至少一个光电转换器303的结构被定义为像素。该实施例的一个像素包括一个光电转换器303、一个转移晶体管304、一个放大晶体管306和一个重置晶体管307。转移晶体管304的源级连接到光电转换器303,转移晶体管304的漏极区域连接到放大晶体管306的栅极电极。与该放大晶体管306的栅极电极相同的节点被定义为节点305。重置晶体管307连接到节点305,并且将其电势设置为任意电势(例如重置电势)。在该结构中,放大晶体管306是源级跟随器电路的一部分,并且将与节点305的电势对应的信号输出到信号线RL。在一些情况下,节点305也可以被称为浮置扩散区。
***电路部分302表示除了像素部分301之外的区域。在***电路部分302中,设置有包括读出电路和控制电路的***电路。***电路具有垂直扫描电路VSR,其为将控制信号提供给像素部分301的晶体管的栅极电极的控制电路。此外,***电路具有读出电路RC,其保持从像素部分301输出的信号并且执行信号处理(如放大、相加和AD转换)。此外,***电路具有水平扫描电路HSR,其为控制用于从读出电路RC依次输出信号的时序的控制电路。
此外,通过将两个构件彼此接合来形成根据实施例1的固态图像拾取设备。这两个构件是具有第一基板101的第一构件308和具有第二基板121的第二构件309。像素部分301的光电转换器303和转移晶体管304布置在第一基板上,像素部分301的放大晶体管306和重置晶体管307以及***电路的至少一部分布置在第二基板上。经由接合部分310提供从第二构件309的***电路到第一构件308的转移晶体管304的栅极电极的控制信号。稍后将描述接合部分310的结构。在转移晶体管304的漏极区域处(即在节点305处)读出第一构件308的光电转换器303中生成的信号。节点305包括第一构件308中形成的结构和第二构件309中形成的结构。
根据上述结构,与其中所有像素部分都设置在一个构件上(即在一个大基板上)的相关情况相比,可以增加光电转换器303的面积,因此可以改进灵敏度。此外,与其中所有像素部分都设置在一个构件上(即在一个大基板上)的相关情况相比,当不改变光电转换器的面积时,可以增加光电转换器303的数量,因此可以增加像素的数量。此外,与其中所有像素部分和所有***电路部分都设置在一个构件上(即在一个大基板上)的相关情况相比,变得容易分离地形成像素部分和***电路部分。
将使用图2A和图2B中所示的固态图像拾取设备的示意性平面图来描述如上述的固态图像拾取设备的具体平面布局。图2A示出第一构件308(即第一基板101)的平面布局,图2B示出第二构件309(即第二基板121)的平面布局。
在图2A中,在第一构件308中,设置其中布置有光电转换器的像素部分301A以及在其中的每一个中布置有焊盘313的焊盘部分312A。在像素部分301A中,设置图3所示的光电转换器303、转移晶体管304、接合部分310和接合部分311。此外,在当沿着与基板101的主面垂直的方向观看时与这些焊盘313相同的位置处设置用于连接到第二构件309的接合部分314A。外部端子连接到焊盘313。焊盘313设置在固态图像拾取设备中,并且包括:其中的每一个基于光电转换器中生成的电荷而输出信号(图像信号)的焊盘,以及其中的每一个被输入有从外部提供用于驱动***电路的电压等的焊盘。
接下来,在图2B中,在第二构件309中设置像素部分301B、***电路部分302和焊盘部分312B。像素电路的一部分设置在像素部分301B中,即图3中所示的放大晶体管306、重置晶体管307以及接合部分310和311设置在其中。***电路的一部分设置在***电路部分302中,即水平扫描电路HSR、垂直扫描电路VSR和读出电路RC设置在其中。用于连接到第一构件的接合部分314B和保护二极管电路315设置在焊盘部分312B中。
此外,分别具有图2A和图2B所示的平面布局的第一构件308和第二构件309彼此接合,以形成该实施例的固态图像拾取设备。特别地,像素部分301A和像素部分301B被设置为彼此交叠。此外,接合部分314A和接合部分314B彼此接合,第一构件的接合部分310和接合部分311分别接合到第二构件的接合部分310和接合部分311。此外,在图2A和图2B中,***电路部分302A表示与第二构件309的***电路部分302B对应的第一构件308的区域。扫描电路的一部分(即***电路的一部分)可以设置在***电路部分302A中。稍后将详细描述该接合部分的结构。
接下来,将参照图1所示的示意性截面图描述图2A、图2B和图3所示的固态图像拾取设备。在图1中,与图2A、图2B和图3相同的构成元件由与以上描述的相同附图标记指定,并且省略描述。
第一构件308具有第一布线结构149和第一基板101。第一基板101是例如硅半导体基板,并且具有主面102和背面103。晶体管布置在第一基板的主面102上。第一布线结构149具有层间绝缘膜104和105、包含栅极电极和布线的栅极电极层107、包含布线的布线层109和110以及包含触点和/或通孔的接触层108。此外,第一布线结构149具有第一扩散防止膜111。在该实施例中,可以任意确定第一布线结构149中包括的层间绝缘膜、布线层和接触层的数量。此外,第一布线结构149的布线层110包含接合部分311和314A,并且与接触层集成。下文中,接合部分表示联合地形成电连接的第一构件的导电材料和第二构件的导电材料彼此间接合的部分,并且还表示在接合之前的导电材料。
在第一构件308的像素部分301中,在第一基板101中设置有形成光电转换器的n型半导体区域112、用作转移晶体管的漏极的n型半导体区域114以及元件隔离结构119。转移晶体管由n型半导体区域112、n型半导体区域114以及栅极电极层107中包含的栅极电极113形成。栅极电极113将n型半导体区域112中存储的电荷转移到n型半导体区域114。基于转移到n型半导体区域114的电荷的电势经由接触层108的触点、布线层109的布线以及包含接触层的布线层110而发送到第二构件309。该布线层110中包含的布线形成接合部分311。此外,光电转换器可以是还具有p型半导体区域的掩埋光电二极管或光电门(photogate),并且可以适当地改变。
平面化层115、包含多个滤色器的滤色器层116、平面化层117以及包含多个微透镜的微透镜层118在第一基板101的背面103一侧被依次设置在像素部分301中。在图1中,虽然对于一个光电转换器提供(也就是说,在每个像素中提供)滤色器中的每一个和微透镜中的每一个,但可以对于多个像素提供一个滤色器和一个微透镜。该实施例的固态图像拾取设备是所谓的背照式(back-side illumination-type)固态图像拾取设备,其中,光从微透镜层118侧入射并且由光电转换器接收。
在第一构件308的焊盘部分312A中,提供焊盘313和使焊盘313暴露用于连接到外部端子的开孔100。此外,设置其中的每一个把从焊盘313输入的电压发送到第二构件309的接合部分314A。接合部分314A包含在布线层110中,如像素部分的接合部分那样。此外,在第一构件308中,如图1所示,在与第二构件309的***电路部分302B对应的区域中提供可选的电路元件120。
第二构件309具有第二布线结构150和第二基板121。第二基板121是例如硅半导体基板,并且具有主面122和背面123。晶体管布置在第二基板的主面102上。第二布线结构150具有:层间绝缘膜124至127,包含栅极电极和布线的栅极电极层128,包含布线的布线层130、131和132,以及包含触点和/或通孔的接触层129。此外,第二布线结构150具有第二扩散防止膜133。在该实施例中,可以任意确定第二布线结构150中包括的层间绝缘膜、布线层和接触层的数量。此外,第二布线结构150的布线层131和132分别与接触层集成。此外,布线层132包含接合部分311和314B。
在第二构件309的像素部分301中,在第二基板121中设置有:形成放大晶体管(其形成像素电路)的阱135,形成放大晶体管的源级/漏极区域的n型半导体区域138,以及元件隔离结构136。放大晶体管设置在阱135中,并且由栅极电极层128中包含的栅极电极137以及形成源级/漏极区域的n型半导体区域138形成。在该实施例中,第一构件308通过接合部分311连接到放大晶体管的栅极电极137。放大晶体管的接合部分311和栅极电极137通过布线层132的布线和通孔、布线层131的布线和通孔、布线层130的布线以及接触层129的触点而彼此连接。在此情况下,图3所示的节点305由图1所示的以下部分形成:n型半导体区域114,布线层109、110、132、131和130的布线和通孔,接触层108和129的触点,以及栅极电极137。在图中未示出像素部分301的其它电路(如重置晶体管)。
接下来,在第二构件309的***电路部分302B中设置包括控制电路(如水平扫描电路和垂直扫描电路)和读出电路的***电路的至少一部分。图1示出***电路中包括的可选电路中的n型晶体管和p型晶体管。在p型阱139中设置有由栅极电极层128中包含的栅极电极140和n型源级/漏极区域141形成的n型晶体管。此外,在n型阱142中设置有具有在栅极电极层128中包含的栅极电极143和形成p型源级/漏极区域的p型半导体区域144的p型晶体管。
此外,在第二构件309的焊盘部分312B中,设置有输入来自第一构件308的焊盘313的信号的保护二极管电路315以及用于连接到第一构件308的接合部分314B。接合部分314B被包含在布线层132中,如像素部分的接合部分那样。在该实施例的保护二极管电路315中包含分别从半导体区域形成的两个二极管145和146以及从栅极电极层128形成的两个电阻器147和148。通用保护二极管电路可以用于该保护二极管电路315。
此外,在根据该实施例的固态图像拾取设备中,第一基板101的主面102和第二基板121的主面122被设置为彼此面对(面对布置),其间提供有第一布线结构和第二布线结构。也就是说,第一基板、第一布线结构、第二布线结构和第二基板依次被设置。此外,也可以说,第一布线结构149的上面和第二布线结构150的上面在接合平面X处彼此接合。也就是说,第一构件308和第二构件309在接合平面X处彼此接合。从第一布线结构149的上面和第二布线结构150的上面形成接合平面X。各个构件中设置的接合部分在接合平面X处彼此接合,并且确保构件之间的导通。此外,用于与外部交换信号的固态图像拾取设备的焊盘313设置在第二构件309的主面122之上,在第一构件308一侧提供开孔100。
在该实施例中,在第一布线结构149中,布线层109由主要包括铝的布线(铝线)形成,布线层110由主要包括铜的布线(铜线)形成,并且具有双镶嵌结构。此外,在第二布线结构150中,布线层130由铜线形成,并且具有单镶嵌结构。布线层131和132由铜线形成,并且分别具有双镶嵌结构。由布线层110中包含的布线形成的接合部分311和接合部分314A通过金属接合在接合平面X处分别接合到由布线层132中包含的布线形成的接合部分311和接合部分314B。此外,在焊盘部分中,用于连接到外部端子的焊盘313被设置在与布线层109相同(即与其高度相同)的层中,并且是主要包括铝的导电材料。该布线层109的高度和焊盘313的高度分别是距第一基板101的主面102的高度。
接下来,将参照图4A至图6B描述制造该实施例的固态图像拾取设备的方法。图4A和图4B分别是示出制造第一构件308的步骤的示意性截面图,图5A和图5B分别是示出制造第二构件309的步骤的示意性截面图,图6A和图6B分别是示出在第一构件308和第二构件309彼此接合之后执行的制造步骤的示意性截面图。
将参照图4A和图4B描述制造图1所示的第一构件308的步骤。在图4A和图4B中,待稍后形成为图1所示的第一构件308的结构由308’表示,待形成为图1所示的像素部分301、***电路部分302、焊盘部分312和作为***电路的一部分的电路元件120的部分分别由301’、302’、312’和120’表示。
首先,提供半导体基板,在半导体基板中形成元件。提供了具有主面402和背面403的厚度D3的半导体基板401。半导体基板401是例如硅半导体基板。在半导体基板401中形成元件隔离结构119。元件隔离结构119包含绝缘金属(如硅氧化物膜),并且具有例如LOCOS或STI结构。此外,在半导体基板401中形成具有任意导通类型的阱(未示出)。随后,形成n型半导体区域112和114以及p型半导体区域(未示出),这些半导体区域形成光电转换器和晶体管。此外,形成包含转移晶体管的栅极电极113的栅极电极层107。栅极电极层例如通过多晶硅层的沉积和图案化而形成,并且可以包含布线以及栅极电极。可以根据一般的半导体工艺来执行用于形成栅极电极、元件隔离和半导体区域的方法,并且将省略详细描述。通过上述步骤获得图4A所示的结构。
接下来,在半导体基板401的主面402上形成布线结构。特别地,首先,形成待形成为层间绝缘膜104’的膜,以便覆盖栅极电极层107。在待形成为层间绝缘膜104’的膜中形成接触孔之后,形成势垒金属和钨的膜,并且移除其膜的过剩部分,由此形成层间绝缘膜104’和接触层108。此外,在层间绝缘膜104’上形成势垒金属和铝的膜,随后图案化,以便形成布线层109。接下来,形成待形成为层间绝缘膜105的膜,以便覆盖布线层109,并且形成待形成为第一扩散防止膜111的膜。接下来,通过双镶嵌方法来形成布线层110。在待形成为层间绝缘膜105的膜和待形成为第一扩散防止膜111的膜的叠层中形成用于布线的槽和用于通孔的槽(孔)。形成具有扩散防止功能的势垒金属的膜和铜的膜,以便填充槽。通过移除过剩的势垒金属和铜来形成布线层110,并且形成层间绝缘膜105和第一扩散防止膜111。在此情况下,第一扩散防止膜111具有开孔,以使布线暴露。此外,可以通过在移除势垒金属和铜时执行的蚀刻或化学机械抛光(CMP)来同时使第一扩散防止膜111平面化。如此平面化的第一平面化扩散防止膜111的上面具有用于后续接合的足够平坦度。布线结构的上面由第一扩散防止膜111的上面和布线层110的上面形成。层间绝缘膜104’稍后形成为图1所示的层间绝缘膜104。
在该实施例中,层间绝缘膜104’和105每个都是硅氧化物膜。然而,层间绝缘膜104’和105也可以例如由硅氮化物膜或有机树脂来形成。触点108例如从钨形成。布线层110包含接合部分314A和接合部分311A,布线层109包含焊盘313。势垒金属具有用于防止作为导电材料的铜的扩散的功能并且由例如钽或钽氮化物形成。第一扩散防止膜111由具有针对包含接合部分的布线层110的导电材料的扩散防止功能的膜形成,并且是高密度无机绝缘膜。例如,扩散防止膜是硅氮化物膜或硅碳化物膜。可以根据一般半导体工艺来执行用于制造这些布线层、接触层和层间绝缘膜的方法,并且将省略详细描述。通过上述步骤获得图4B所示的结构。在图4B中,附图标记104’、105、106、108、109和110表示的部分随后用于形成图1所示的第一布线结构149。此外,接合部分311A随后形成接合部分311。在该图4B中,随后形成图1所示的接合平面X的第一布线结构149的上面由第一扩散防止膜111的上面和布线层110的每个布线的上面形成。稍后将详细描述该上面的结构。
接下来,将参照图5A和图5B描述制造图1所示的第二构件309的步骤。在图5A和图5B中,待稍后形成为图1所示的第二构件309的结构由标号309’表示,待形成为图1所示的像素部分301、***电路部分302、焊盘部分312和保护二极管电路315的部分分别由标号301’、302’、312’和315’表示。
接下来,在半导体基板404的主面405上形成布线结构。特别地,首先,形成待形成为层间绝缘膜124的膜,以便覆盖栅极电极128。在待形成为层间绝缘膜124的膜中形成接触孔之后,形成势垒金属的膜和钨的膜,并且通过移除势垒金属和钨的膜的过剩部分来形成层间绝缘膜124和接触层129。此外,在层间绝缘膜124上形成待形成为层间绝缘膜125的膜。接下来,通过单镶嵌方法来形成布线层130。在待形成为层间绝缘膜125的膜中形成用于布线的槽,并且形成具有扩散防止功能的势垒金属的膜和铜的膜以便填充槽。通过移除过剩势垒金属和铜来形成布线层130,并且形成层间绝缘膜125。接下来,形成待形成为层间绝缘膜126的膜以便覆盖层间绝缘膜125和布线层130。此外,通过双镶嵌方法来形成布线层131。特别地,在待形成为层间绝缘膜126的膜中形成用于布线和通孔的槽。形成具有扩散防止功能的势垒金属的膜和铜的膜,以便填充槽。通过移除过剩势垒金属和铜来形成布线层131,并且形成层间绝缘膜126。此外,形成待形成为层间绝缘膜127的膜和待形成为第二扩散防止膜133的膜,以便覆盖层间绝缘膜126和布线层131。接下来,通过双镶嵌方法来形成布线层132。也就是说,在待形成为层间绝缘膜127和第二扩散防止膜133的膜中形成用于布线和通孔的槽,并且形成具有扩散防止功能的势垒金属的膜和铜的膜以便填充槽。通过移除铜的膜和具有扩散防止功能的势垒金属的膜的过剩部分来形成布线层132。在此情况下,势垒金属具有针对作为导电材料的铜的扩散防止功能并由例如钽或钽氮化物形成。此外,形成层间绝缘膜127和第二扩散防止膜133。在该实施例中,第二扩散防止膜133具有开孔以便使布线暴露。此外,可以通过在移除势垒金属和铜时执行的蚀刻或CMP来同时使第二扩散防止膜133平面化。布线结构的上面由第二扩散防止膜133的上面和布线层132的上面形成。
在此情况下,虽然由硅氧化物形成,但层间绝缘膜124至127中的每个也可以例如由硅氮化物膜或有机树脂形成。触点129例如以钨形成。布线层130以主要包括铜的布线形成,并且具有单镶嵌结构。布线层131和132分别由主要包括铜的布线形成,并且分别具有双镶嵌结构。布线层132包含接合部分314B和接合部分311B。可以根据一般的半导体工艺来执行用于制造这些布线层、接触层和层间绝缘膜的方法,并且省略更详细的描述。通过上述步骤获得图5B所示的结构。在图5B中,例如由附图标记124至127和129至133表示的部分随后用于形成图1所示的第二布线结构150。此外,接合部分311B随后形成接合部分311。
在该图5B中,随后形成图1所示的接合平面X的第二布线结构150的上面由层间绝缘膜127的上面和布线层132的每个布线的上面形成。布线层132还是用作接合部分的导电材料。也就是说,第二布线结构150的上面包含导电材料的上面。稍后将详细描述该上面的结构。
图4B和图5B分别所示的第一构件308’和第二构件309’接合在一起,以使得相应半导体基板的主面402和主面405彼此面对。也就是说,第一构件308’的布线结构的最上面和第二构件309’的布线结构的最上面彼此接合。在该实施例中,由于接合部分311A和311B以及接合部分314A和314B由主要包括铜的布线形成,所以当在其之间执行接合时,可以执行铜的金属接合。此外,优选地在真空或惰性气体气氛中执行接合。此外,在执行接合之前,优选地对每个布线结构的上面执行等离子体照射。通过执行这种等离子体照射,与其中不执行等离子体照射的情况相比,可以更好地加强层间绝缘膜(如硅氧化物膜和/或硅氮化物膜)之间的接合。此外,替代使用等离子体照射,也可以使用通过化学处理的活化方法。通过这种接合,两个布线结构联合为一个布线结构,其包括被扩散防止膜包围的铜接合部分。
此外,在第一构件308’和第二构件309’接合在一起之后,第一构件308’的半导体基板401的厚度在背面403一侧减小。可以通过CMP或蚀刻来执行厚度的减小。相应地,半导体基板401形成为半导体基板407,厚度从D3改变为D1(D1<D3)(图6A)。如上所述,由于半导体基板401的厚度减小以形成半导体基板407,因此随后入射光能够高效地进入光电转换器。此外,在该阶段,半导体基板407的厚度D1小于半导体基板404的厚度D4。
接下来,由树脂形成的平面化层409、滤色器层410、由树脂形成的平面化层411以及微透镜层412依次在半导体基板407的背面408上形成。可以根据一般半导体工艺来执行用于制造这些平面化层、滤色器层和微透镜层的方法,并且将省略详细描述。在此情况下,微透镜层可以形成到待形成为焊盘部分的区域312’。通过上述步骤获得图6B所示的结构。
此外,形成开孔100以暴露焊盘313。在该步骤中,使用光刻技术在微透镜层412上形成具有任意开孔的光致抗蚀掩模。此外,使用干法蚀刻技术,部分地移除微透镜层412、平面化层411、滤色器层410、平面化层409、半导体基板407和层间绝缘膜104’,由此形成开孔100以暴露焊盘313。
相应地,形成微透镜层118、平面化层117和115、滤色器层116、第一基板101以及层间绝缘膜104。结果,获得图1所示的结构。图6B所示的半导体基板404、主面405、背面406和厚度D4分别与图1所示的第二基板121、主面122、背面123和厚度D2对应。虽然在此情况下厚度D4不相对于厚度D2改变,但半导体基板404的厚度可以减小,以使得厚度D2小于厚度D4。虽然步骤的数量因厚度的减小而增加,但可以使固态图像拾取设备小型化。
下文中,将参照图7A至图7D描述接合部分的细节。图7A至图7D分别是图1所示的接合部分311的放大示意性截面图。在图7A至图7D中,相同附图标记指定与图1至图6B所示的相同构成元件,并且将省略描述。
首先,图7A示出在第一构件和第二构件彼此接合之前的状态,图7B示出这两个构件彼此接合(图6A)的状态。第一构件308’具有布线层109、布线层110和第一扩散防止膜111。布线层109包含铝109a和势垒金属109b,布线层110包含铜110a和势垒金属110b。此外,第二构件309’具有布线层131、布线层132和第二扩散防止膜133。布线层131包含铜131a和势垒金属131b,布线层132包含铜132a和势垒金属132b。也就是说,接合部分包含具有比铝更高的扩散系数的铜作为导电材料。在此情况下,导电材料不限于铜,并且可以选自主要由铜组成的合金、其它金属(如Au)及其合金。此外,用于铜的势垒金属充当具有防止铜扩散的能力的扩散防止膜。作为该势垒金属,例如,可以提及金属(如钽、锰、铌和铬)及其合金,钽氮化物膜也具有势垒功能。此外,作为第一扩散防止膜和第二扩散防止膜,例如,可以提及硅氮化物膜、硅碳化物膜、硅碳氮化物膜或硅氧氮化物膜。此外,除了暴露于平面X1的部分之外,铜110a被势垒金属110b包围。此外,除了暴露于平面X2的部分之外,铜132a被势垒金属132b包围。在该实施例中,平面X1是第一布线结构149的上面,平面X2是第二布线结构150的上面。
如图7B所示,平面X1和平面X2形成接合平面X,第一构件308’和第二构件309’彼此接合。铜110a和铜132a金属接合在一起。在此情况下,铜110a和铜132a分别被势垒金属110b和势垒金属132b(其中的每一个是具有针对铜的扩散防止功能的扩散防止膜)包围。根据上述结构,由于导电材料在接合部分处被扩散防止膜包围,因此可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
图7C是示出在图7A所示的结构中,形成接合部分的布线层110和布线层132的位置偏移的情况的示意性截面图。在图7C所示的情况下,由于提供第一扩散防止膜111和第二扩散防止膜133,因此导电材料也可以在接合部分处被扩散防止膜包围。特别地,如图7D所示,铜110a和铜132a被势垒金属110b和势垒金属132b(其中的每一个是扩散防止膜)和第一扩散防止膜111以及第二扩散防止膜133共同包围。通过上述结构,即使位置例如因工艺条件的变化而偏移,导电材料也在接合部分处被扩散防止膜包围;因此,可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
本发明不限于在根据该实施例的制造方法中描述的步骤,并且步骤的顺序也可以改变。此外,可以适当地确定制造第一构件308和第二构件309的顺序。SOI基板也可以应用于半导体基板401和404中的每一个。此外,第一构件308和第二构件309也可以分别购买作为用于固态图像拾取设备的基板,然后接合在一起。
接下来,将参照图8A至图9C描述本发明的实施例2。在该实施例中,将描述接合部分的结构的若干修改。图8A至图8H分别是针对与图7A至图7D所示的接合部分对应的接合部分的示意性截面图。在图8A至图8H中,与上述相同的标号指定与图1至图7D所示的相似的构成元件,并且将省略描述。
首先,将描述图8A和图8B所示的接合部分的修改。图8A是与图7A所示的对应的示意性截面图,图8B是与图7B所示的对应的示意性截面图。在图8A中,与图7A的差异是,布线层110具有比布线层132更小的暴露面积,第二构件309’没有第二扩散防止膜133。虽然图8A所示的结构仅是其部分截面,但在平面X1处的布线层110的面积小于在平面X2处的布线层132的面积。在上述结构中,如示出在接合之后的状态的图8B所示,铜110a和铜132a还被势垒金属110b和132b(其中的每一个是扩散防止膜)以及第一扩散防止膜111包围。
接下来,将描述图8C和图8D所示的接合部分的修改。图8C是与图8A所示的对应的示意性截面图,图8D是与图8B所示的对应的示意性截面图。在图8C中,与图8A的差异是,布线层110具有在平面X1处的凹部分801。特别地,第一扩散防止膜111设置在层间绝缘膜105和布线层110上,并且具有与布线层110对应的开孔。在上述结构中,如示出在接合之后的状态的图8D所示,铜110a和铜132a也被势垒金属110b和132b(其中的每一个是扩散防止膜)以及第一扩散防止膜111包围。在该修改中,虽然凹部分801具有与第一扩散防止膜111的厚度对应的台阶,但该台阶可以例如通过部分移除铜110a而增大。此外,即使布线层110具有凹部分801,但由于导电材料(如铜)的热膨胀系数大于形成扩散防止膜和层间绝缘膜的介电材料的热膨胀系数,因此接合的接合平面X可以具有如图8D所示的平坦面。
接下来,将描述图8E和图8F所示的接合部分的修改。图8E是与图8C所示的对应的示意性截面图,图8F是与图8D所示的对应的示意性截面图。在图8E中,与图8C的差异是,布线层110具有在平面X1处的凸部分802。特别地,铜110a具有从由第一扩散防止膜111等形成的平面X1突出厚度D的凸部分。在上述结构中,如示出在接合之后的状态的图8F所示,铜110a和铜132a也被势垒金属110b和132b(其中的每一个是扩散防止膜)以及第一扩散防止膜111包围。在上述情况下,虽然具有平滑形状,但凸部分802可以具有矩形形状。此外,由于针对接合施加压力,所以即使布线层110具有凸部分802,在接合之后的接合平面X也可以具有如图8F所示的平坦面。
接下来,将描述图8G和图8H所示的接合部分的修改。图8G是与图8E所示的对应的示意性截面图,图8H是与图8F所示的对应的示意性截面图。在图8G中,与图8E的差异是以下三点。也就是说,这三点是:布线层132在平面X2处也具有凸部分803,在平面X1处的布线层110的面积和在平面X2处的布线层132的面积彼此相等,第二构件309’具有第二扩散防止膜133。铜110a具有从平面X1突出厚度D1的凸部分,铜132a具有从平面X2突出厚度D2的凸部分。在上述结构中,如示出在接合之后的状态的图8H所示,铜110a和铜132a还被势垒金属110b和132b(其中的每一个是扩散防止膜)、第一扩散防止膜111和第二扩散防止膜133包围。在此情况下,在第一构件308’与第二构件309’之间形成带隙804。由于铜110a和铜132a与带隙804接触,因此在一些情况下,铜可以在与该带隙804的接口处扩散。然而,由于提供第一扩散防止膜111和第二扩散防止膜133,所以可以抑制铜到第一构件308’和第二构件309’的基板侧的扩散。当然,在图8G所示的第一构件308’和第二构件309’接合在一起之后,在一些情况下可以不形成带隙804。
如上所述,还在图8A至图8H所示的结构中,铜可以在接合部分处被扩散防止膜包围。因此,可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
下文中,将针对图8G所示的接合部分311B描述具有图8E和图8G中的每一个所示的凸部分的接合部分的形成方法。首先,形成层间绝缘膜126、布线层131和层间绝缘膜127。随后,通过双镶嵌方法在层间绝缘膜127中形成布线层132。在此情况下,当移除铜和势垒金属的过剩膜时,可以通过在使用CMP方法的情况下调整抛光速度和浆料或在使用蚀刻的情况下通过调整蚀刻气体等来形成具有凸部分(突出部分)的铜132a(图9A)。接下来,覆盖凸部分并且待形成为第二扩散防止膜的膜133’形成(图9B),然后被通过蚀刻方法或CMP方法部分地移除,以使得可以形成第二扩散防止膜133和凸部分803(图9C)。
此外,在图9A至图9C中,层间绝缘膜126和层间绝缘膜127分别由多个绝缘膜形成,并且覆盖布线层131的上面的扩散防止膜701被形成了。如上所述,可以适当地确定层间绝缘膜的结构。
前文中,在该实施例中,描述了接合部分的结构的修改。上述修改可以适当地组合使用,并且可以适当地应用于第一构件和第二构件中的至少一个。
接下来,将参照图10A至图11C描述本发明的实施例3。在该实施例中,将描述接合部分的结构的若干修改。图10A至图10C是参照图8A至图8H描述的接合部分的示意性截面图。在图10A至图10C中,由与上述相同的附图标记指示与图1至图7D所示的相似构成元件,并且将省略描述。
图10A和图10B彼此对应,并且分别是其中布置多个在图8B或图8D中所示的接合部分的示意性截面图。图10C示出图10B所示的结构的修改。
首先,在图10A中,对于多个接合部分311共同形成第一扩散防止膜111。在图10B中,通过图案化形成第一扩散防止膜111P,以便包围对应接合部分的周边部分,并且移除接合部分311之间的第一扩散防止膜111。此外,与图10B所示的结构相比,在图10C中,还提供第二扩散防止膜133P,并且通过图案化形成第二扩散防止膜133P以便包围对应接合部分的周边部分,如第一扩散防止膜111P的情况那样。
在此情况下,由于第一扩散防止膜由硅氮化物膜形成并且层间绝缘膜由硅氧化物形成,所以第一扩散防止膜具有比层间绝缘膜更高的介电常数。当沿着布线的周边部分设置具有如上所述的高介电常数的膜时,其寄生电容增大。因此,与图10A所示的结构相比,可以通过图10B所示的结构来减少布线之间的寄生电容。此外,还在如图10C所示那样提供第二扩散防止膜133P的情况下,可以减小寄生电容。扩散防止膜701也可以如图10B和图10C所示那样图案化。
图11A至图11C分别是用于示出在接合部分311处的布线层110、布线层132、第一扩散防止膜和第二扩散防止膜的位置关系的每个结构的外边缘的示意性平面图。换句话说,这些图示出在接合平面X处的每个结构的布置。在图11A至图11C中,与上述相同的附图标记指示与图1至图10C中所示的相似构成元件,并且将省略描述。
图11A是与图10B对应的示意性平面图。图11A所示的线XB-XB与沿着图10B的接合平面X取得的截面对应。如图11A所示,第一扩散防止膜111P具有最大面积,并且覆盖布线层132。也就是说,布线层132的铜被暴露出的面与第一扩散防止膜111P和布线层110对应。通过如上所述的图案之间的大小关系,可以容易地用扩散防止膜覆盖铜。
图11B和图11C是与图10C对应的示意性平面图。图11B和图11C所示的直线XC-XC与沿着图10C所示的接合平面X取得的截面对应。在图11B中,图案的大小从布线层110、布线层132、第一扩散防止膜111P和第二扩散防止膜133P依次增大。通过如上所述的图案之间的大小关系,布线层132的铜被暴露出的面与第一扩散防止膜111P和布线层110对应,并且可以容易地用扩散防止膜覆盖铜。
图11C具有与图11B所示的布线层110和布线层132的不同图案。布线层110和布线层132的图案在第一方向和与其不同的第二方向上分别具有长边。通过如上所述的图案,可以增加在接合处的位置偏移的可接受范围。
如在该实施例中描述的那样,第一扩散防止膜、第二扩散防止膜和接合部分分别可以具有任意形状,并且可以适当地选择其形状。
下文中,作为以上实施例中的每一个的固态图像拾取设备的应用示例,将举例描述包括固态图像拾取设备的图像拾取***。在图像拾取***中,除了主要用于拾取图像的设备(如相机)之外,还包括具有图像拾取功能的辅助设备(如个人计算机和个人数字助理)。例如,相机包括本发明的固态图像拾取设备和处理从固态图像拾取设备输出的信号的处理部分。该处理部分可以包括例如A-D转换器和处理从其输出的数字信号的处理器。
如所描述的那样,根据本发明的固态图像拾取设备,可以提供一种能够抑制暗电流和/或泄漏电流的生成的固态图像拾取设备。
此外,本发明不限于说明书中描述的结构,并且也可以应用于其中像素电路改变并且对于第一构件仅布置光电转换器的情况。此外,本发明可以适当地应用于例如:其中导电和/或电路类型改变为相反类型的结构,其中还提供布线层和层间绝缘膜的结构,以及其中单镶嵌结构改变为双镶嵌结构的情况。此外,也可组合使用实施例的结构。
此外,本发明不限于固态图像拾取设备,并且也可以应用于普通半导体设备(如DRAM)。
虽然已经参照示例性实施例描述了本发明,但应理解,本发明不限于公开的示例性实施例。所附权利要求的范围将要被赋予最宽泛的解释,从而包括所有这些修改以及等效结构和功能。
本发明要求于2010年7月9日提交的日本专利申请No.2010-156926的权益,由此其全部内容通过引用而结合于此。
[附图标记列表]
301像素部分
302***电路部分
308第一构件
309第二构件
149第一布线结构
150第二布线结构
311接合部分
314接合部分
101第一基板
121第二基板
X接合平面
111第一扩散防止膜
133第二扩散防止膜
Claims (14)
1.一种固态图像拾取设备,包括:
第一基板,具有设置在第一基板的主面上的光电转换器;
第一布线结构,设置在第一基板的主面上并且具有包含导电材料的第一接合部分;
第二基板,在第二基板的主面上具有包括控制电路和基于光电转换器的电荷而读出信号的读出电路的***电路的一部分;以及
第二布线结构,设置在第二基板的主面上并且具有包含导电材料的第二接合部分,
其中,第一接合部分和第二接合部分被接合为使得第一基板、第一布线结构、第二布线结构以及第二基板依次设置,以及
第一接合部分的导电材料和第二接合部分的导电材料被扩散防止膜包围。
2.如权利要求1所述的固态图像拾取设备,其中,第一接合部分包含导电材料和势垒金属,
第二接合部分包含导电材料和势垒金属,以及
扩散防止膜包括相应的势垒金属。
3.如权利要求2所述的固态图像拾取设备,其中,第一布线结构具有层间绝缘膜,在层间绝缘膜中设置有第一接合部分,以及
第一接合部分的势垒金属被设置在第一接合部分的导电材料与层间绝缘膜之间。
4.如权利要求2或3所述的固态图像拾取设备,其中,第二布线结构具有层间绝缘膜,在层间绝缘膜中设置有第二接合部分,以及
第二接合部分的势垒金属设置在第二接合部分的导电材料与层间绝缘膜之间。
5.如权利要求1至4之一所述的固态图像拾取设备,
其中,所述导电材料中的每种导电材料都包括具有比铝更高的扩散系数的金属或包括包含该金属的合金。
6.如权利要求5所述的固态图像拾取设备,其中,所述导电材料中的每种导电材料都包括铜或包括主要由铜组成的合金。
7.如权利要求1至6之一所述的固态图像拾取设备,
其中,扩散防止膜包括第一扩散防止膜,以及
第一布线结构的上面包括第一接合部分和第一扩散防止膜。
8.如权利要求7所述的固态图像拾取设备,其中,第一扩散防止膜被图案化为包围第一接合部分的周边部分。
9.如权利要求7或8所述的固态图像拾取设备,其中,第一扩散防止膜是硅氮化物膜或硅碳化物膜。
10.如权利要求1至6之一所述的固态图像拾取设备,
其中,扩散防止膜包括第二扩散防止膜,以及
第二布线结构的上面包括第二接合部分和第二扩散防止膜。
11.如权利要求10所述的固态图像拾取设备,其中,第二扩散防止膜被图案化为包围第二接合部分的周边部分。
12.如权利要求10或11所述的固态图像拾取设备,其中,第二扩散防止膜是硅氮化物膜或硅碳化物膜。
13.如权利要求1至12之一所述的固态图像拾取设备,其中,第二基板还具有基于光电转换器的电荷而输出信号的放大晶体管以及重置光电转换器的电荷的重置晶体管。
14.一种成像***,包括:如权利要求1至13之一所述的固态图像拾取设备;以及信号处理电路,处理来自所述固态图像拾取设备的信号。
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CN105720067A (zh) | 2016-06-29 |
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CN102971851B (zh) | 2016-04-06 |
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US20220037390A1 (en) | 2022-02-03 |
RU2521224C1 (ru) | 2014-06-27 |
EP2591505A1 (en) | 2013-05-15 |
US20230299112A1 (en) | 2023-09-21 |
EP2591505A4 (en) | 2014-04-16 |
US9929202B2 (en) | 2018-03-27 |
US20160005776A1 (en) | 2016-01-07 |
JP2012019147A (ja) | 2012-01-26 |
US20190148446A1 (en) | 2019-05-16 |
US20200168654A1 (en) | 2020-05-28 |
US20160322415A1 (en) | 2016-11-03 |
US11177310B2 (en) | 2021-11-16 |
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