CN102832205A - In-line small bridge rectifier - Google Patents
In-line small bridge rectifier Download PDFInfo
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- CN102832205A CN102832205A CN2011101616816A CN201110161681A CN102832205A CN 102832205 A CN102832205 A CN 102832205A CN 2011101616816 A CN2011101616816 A CN 2011101616816A CN 201110161681 A CN201110161681 A CN 201110161681A CN 102832205 A CN102832205 A CN 102832205A
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention discloses an in-line small bridge rectifier. The in-line small bridge rectifier comprises a packaging body, two supporting sheets arranged in the packaging body, two connecting sheets, four diode chips, and four lead wires extended from the packaging body, wherein the whole packaging body is of a strip structure; the four diode chips are arranged in a row; the four lead wires are arranged in parallel in a row, extend from the packaging body and are parallel to the normal directions of the four diode chips; and the four lead wires are fixedly connected with the two supporting sheets and the two connecting sheets to form anode and cathode output ends and an alternating-current input end of the bridge rectifier. According to the in-line small bridge rectifier, the lead wires are configured to be parallel to the normal directions of the diode chips, so that smaller space is occupied on a welding mould during assembling, the number of bridge rectifiers welded on the same welding mould is increased, the production efficiency is improved, the cost is reduced, and meanwhile, an angular position is convenient to adjust.
Description
Technical field
The present invention relates to rectistack, relate in particular to a kind of small-sized bridge heap of in-line arrangement of AC-DC.
Background technology
The bridge architecture that bridge rectifier is made up of four rectifier diodes; It utilizes the unilateal conduction characteristic of diode that alternating current is carried out rectification; Because bridge rectifier must utilize efficient to double than halfwave rectifier to input sine wave; Be a kind of remarkable improvement, convert in the galvanic circuit so be widely used in alternating current to the diode halfwave rectifier.
Along with electronic product develops to miniaturization, what require that the profile of semi-conductor electronic device does is again little and thin.Present minimize bridge heap mainly is divided into two types, and one type is direct insertion bridge heap, and another kind is SMD bridge heap.
For direct insertion bridge heap, more typical at present structure has following several kinds:
1, Chinese patent ZL97247861.2 disclosed a kind of " the vertical full-wave bridge rectifier heap of single row " by name, it comprises by terminal pin A, B, C, D, unilateal conduction chip, plastic packaging shell and edge joint sheet E, F.At terminal pin and brace intersection clamping unilateal conduction chip or transition plate are arranged, packing weld tabs between unilateal conduction chip or transition plate and terminal pin, edge joint sheet, terminal pin and brace constitute unidirectional turning circuit through the unilateal conduction chip.Though it constitutes bridge rectifier, also has following shortcoming: 1) in this rectistack, directly extend in the plastic packaging shell, and the unilateal conduction chip is sandwiched between terminal pin and brace owing to terminal pin; Make chip concentrate on the middle part of plastic packaging shell; The skewness of its chip, thus the heat that produces when causing rectistack to use concentrates on the middle part of plastic packaging shell, makes heat be difficult to leave; Thereby cause chip to damage easily because of heat is excessive, shortened the useful life of rectistack greatly; 2) and brace includes three construction sections, it installs very trouble and time-consuming, and owing to can recognize in the above-mentioned rectistack structure; Its chip polarity is towards disunity, thereby its assembling difficulty, and it is unreliable to weld; Time-consuming taking a lot of work; Causing direct result is that assembling and soldering reliability descend, and qualification rate reduces, and cost rises.
2, the disclosed single-row direct insertion full-wave rectification bridge heap of Chinese patent Granted publication CN2901580Y; It comprises insulation crust, be fixed on the inner framework of insulation crust, terminal pin, conductive chip and brace thereof constitutes; Framework is made up of left and right interchange input frame and left and right rectification output box; The both upper ends thereof that a left side exchanges input frame is respectively equipped with conductive chip; The right top that exchanges input frame extends to the interstitial site between the conductive chip that a left side exchanges input frame, and left and right rectification output box places the below on left and right interchange input frame top respectively, and the right input frame top that exchanges is respectively equipped with first and second weld fixation part that supplies the brace solid welding; The left and right rectification output box of its below is fixed with conductive chip; Conductive chip is connected with first and second weld fixation part through brace, and left and right rectification output box is respectively equipped with third and fourth weld fixation part, and is connected with the conductive chip that a left side exchanges on the input frame through brace.Though this patent has good heat dissipation effect, long service life, assembles advantage simply and easily; But because its conductive chip becomes parastate with terminal pin; On weld mold, put during assembling and take more space; Cause the bridge heap negligible amounts of same weld mold welding, make production effect to improve.And, need prepare bigger mould again in order to enhance productivity, cause the weld mold manufacturing cost to rise.The disclosed bridge built-up welding point of this patent is more in addition, occurs quality accident easily.
3, like the disclosed a kind of single-row direct insertion full-wave rectification bridge heap of Fig. 1; It comprises that two roughly become L shaped 2,3 and two straight wires 1 of lead-in wire; Two straight wires 1 are located at two and are roughly become L shaped lead-in wire 2,3 belows; Two straight wires 1 roughly become L shaped lead-in wire 2 with two, are welded with four conductive chips between 3; Though single-row direct insertion full-wave rectification bridge heap shown in Figure 1 has solved the many problems of solder joint, owing to its conductive chip with straight wire 1, roughly become the terminal pin of L shaped lead-in wire 2,3 to become parastate, on weld mold, put during assembling and take more space; Cause the bridge heap negligible amounts of same weld mold welding, make production effect to improve.And, need prepare bigger mould again in order to enhance productivity, cause the weld mold manufacturing cost to rise.
For SMD bridge heap, more typical at present structure has following several kinds:
1, the disclosed a kind of miniature semiconductor rectifier bridge of Chinese invention patent publication number; It comprises two diode crystal grain that have the N type altogether and the two diode crystal grain that have the P type altogether; Wherein altogether a p type island region of N type crystal grain together a corresponding N type fauna of P type crystal grain be connected to a terminal electrode of first group of lead frame; Altogether another p type island region of N type crystal grain then together another N type district of P type crystal grain be connected to the another terminal electrode of first group of lead frame; And the N type district of the common N type crystal grain p type island region of P type crystal grain together then is connected to the two-terminal electrode of second group of lead frame respectively, thereby constitutes a bridge rectifier, although this miniature rectifier structurally helps microminiaturization; But need to adopt the double diode chip of two kinds in the manufacturing; Promptly have N type double diode chip altogether and have P type double diode chip altogether, cause following problem easily: 1) acp chip is wide in variety, and complex process shape increases; 2) the chip qualification rate is relatively low; 3) owing to there are two chip kinds, uniformity is relatively poor; 4) chip of P type substrate relatively difficulty do.
2, the disclosed plate mini-type bridge heap of Chinese invention patent Granted publication CN2545706Y, it forms bridge rectifier by four rectifier diodes in a packaging body; Four rectifier diodes are made up of identical PN junction chip, spatially two and be listed in of four PN junction chips, two and be listed in down in addition; The p type island region of each PN junction chip and N type district arrange up and down; Wherein the p type island region of diagonal position PN junction chip is identical with orientation, N type district, adopts a connecting piece to connect between two PN junction chips repeatedly putting up and down respectively, and be listed in and be listed under two PN junction chips adopt another brace to be connected respectively; Two braces on the intermediate layer are as one group of electrode terminal; Two braces on the upper and lower are organized electrode terminal as another, and in packaging body, draw respectively, constitute miniature five layers of rectifier bridge pile structure with this.Because this patent adopts five-layer structure; Its thickness of product is generally about 2.5～2.7mm; The inner many accommodation spaces of electronic product have not only been taken; And, proposed higher requirement for simultaneously each layer parts installing and locating because the processing step that is arranged so that the production and processing of bridge heap of sandwich construction increases.
3, the disclosed a kind of slim welded type rectifier bridge heap of Chinese patent Granted publication CN201181702; The epoxy packages body inside of this rectifier bridge heap is made up of two bump contacted chips, four diode chip for backlight unit and two block frame support chips; On thickness direction; Brace, diode chip for backlight unit, frame supported sheet lay respectively at upper, middle and lower-ranking, and on top plan view, first brace is fixedly connected with the positive terminal of first, second diode chip for backlight unit; The negative pole end of second brace and the 3rd, the 4th diode chip for backlight unit is fixedly connected; The first frame supported sheet is fixedly connected with the negative pole end of first diode chip for backlight unit and the positive terminal of the 4th diode chip for backlight unit; The second frame supported sheet is fixedly connected with the negative pole end of second diode chip for backlight unit and the positive terminal of the 3rd diode chip for backlight unit; Pin on first brace is as cathode output end; Pin on second brace is as cathode output end, and the pin on the two block frame support chips is as ac input end.The shortcoming that this patent exists is: 1) structure of two bump contacted chips is inequality; The structure of two block frame support chips is inequality; And the structure of lead-in wire is also inequality, therefore need the part more than at least 5 kinds to assemble with crystal grain, and the part of developing more than 5 kinds needs the mould more than 5 kinds; Cause manufacturing cost higher, production management is complicated; 2) the one positive one negative placement of two crystal grain on the block frame support chip causes the crystal grain put procedure complicated, has increased the difficulty of technology.
Summary of the invention
Technical problem to be solved by this invention is to pile existing problem and a kind of easy to assembly, good heat dissipation effect, the small-sized bridge heap of volume in-line arrangement little, that the position, angle is easy to adjust are provided to above-mentioned rectifier bridge.
Technical problem to be solved by this invention can realize through following technical scheme:
The small-sized bridge of in-line arrangement heap comprises a packaging body and is arranged on two support chips in the packaging body, two bump contacted chips, four diode chip for backlight unit and by four lead-in wires that extend out in the said envelope shape body; On bridge heap thickness direction, two bump contacted chips are positioned at the upper strata, and four diode chip for backlight unit are positioned at the intermediate layer, and two support chips are positioned at lower floor; On the top plan view of bridge heap; Be fixedly connected with two diode chip for backlight unit on each piece support chip; And each bump contacted chip respectively with two support chips on each diode chip for backlight unit be fixedly connected; It is characterized in that whole packaging body is structure into strips, said four diode chip for backlight unit become an arranged; Said four lead-in wires are parallel-laid into a row by extending out in the said envelope shape body and laterally arranging with the normal direction of four diode chip for backlight unit, and said four lead-in wires are fixedly connected with two bump contacted chips with two support chips respectively and constitute positive and negative electrode output and the ac input end that bridge is piled.
In a preferred embodiment of the invention; Said two support chips lay respectively at the two ends in the said packaging body; Two lead-in wires that are fixedly connected with two support chips lay respectively at the two ends of said packaging body simultaneously, and other two lead-in wires that are fixedly connected with said two bump contacted chips respectively are positioned at the centre of packaging body.
In a preferred embodiment of the invention; Said two support chips are disposed immediately in the centre in the said packaging body; Two lead-in wires that are fixedly connected with two support chips lay respectively at the centre of said packaging body simultaneously, and other two lead-in wires that are fixedly connected with said two bump contacted chips respectively lay respectively at the two ends of packaging body.
In a preferred embodiment of the invention; Two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the positive terminal of first, second diode chip for backlight unit is fixedly connected with first support chip, and the negative pole end of the 3rd, the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the negative pole end of first diode chip for backlight unit and the positive terminal of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the negative pole end of second diode chip for backlight unit and the positive terminal of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected with first brace; Second lead-in wire is fixedly connected with second brace; First and second lead-in wire is as ac input end, and the 3rd lead-in wire is fixedly connected with first support chip and constitutes cathode output end, and the 4th lead-in wire is fixedly connected as cathode output end with second support chip.
In a preferred embodiment of the invention; Two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the negative pole end of first, second diode chip for backlight unit is fixedly connected with first support chip, and the positive terminal of the 3rd, the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the positive terminal of first diode chip for backlight unit and the negative pole end of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the positive terminal of second diode chip for backlight unit and the negative pole end of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected with first brace; Second lead-in wire is fixedly connected with second brace; First and second lead-in wire is as ac input end, and the 3rd lead-in wire is fixedly connected with first support chip and constitutes cathode output end, and the 4th lead-in wire is fixedly connected as cathode output end with second support chip.
In a preferred embodiment of the invention; Two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace; Four lead-in wires are divided into first, second, third, fourth lead-in wire; Four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit, and wherein the negative pole end of the positive terminal of first diode chip for backlight unit and second diode chip for backlight unit is fixedly connected with first support chip, and the negative pole end of the positive terminal of the 3rd diode chip for backlight unit and the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the negative pole end of first diode chip for backlight unit and the negative pole end of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the positive terminal of second diode chip for backlight unit and the positive terminal of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected as cathode output end with first brace; Second lead-in wire is fixedly connected as cathode output end with second brace, and third and fourth goes between as ac input end.
In a preferred embodiment of the invention; Two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace; Four lead-in wires are divided into first, second, third, fourth lead-in wire; Four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit, and wherein the positive terminal of the negative pole end of first diode chip for backlight unit and second diode chip for backlight unit is fixedly connected with first support chip, and the positive terminal of the negative pole end of the 3rd diode chip for backlight unit and the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the positive terminal of first diode chip for backlight unit and the positive terminal of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the negative pole end of second diode chip for backlight unit and the negative pole end of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected as cathode output end with first brace; Second lead-in wire is fixedly connected as cathode output end with second brace, and third and fourth goes between as ac input end.
In a preferred embodiment of the invention, the structure of said two bump contacted chips is identical, and the structure of two support chips is identical, and the structure of four lead-in wires is identical.
The present invention puts on weld mold during assembling and takies less space because lead-in wire is arranged to the normal direction parallel direction with diode chip for backlight unit, makes that the bridge heap quantity of same weld mold welding is more, has improved production efficiency, has reduced cost; Spacing between while four lead-in wires can be adjusted as required, makes that the position, angle is easy to adjust, need not increase accessory in addition.Moreover, can realize automated production because two support chips, two bump contacted chips, four diode chip for backlight unit adopt the layering tiling, and reduced the thickness of bridge heap simultaneously, saved sizing material, make that the volume of bridge heap is littler, weight is lighter.The present invention directly is welded on diode chip for backlight unit on support chip and the brace, need not wire jumper, good heat dissipation effect simultaneously.The present invention also has an important characteristic, is exactly that the structure of two support chips is identical because the structure of said two bump contacted chips is identical; The structure of four lead-in wires is identical; Therefore only need to produce three kinds of parts, just can be assembled into a bridge heap, saved die cost with crystal grain; Reduce cost, also simplified production management simultaneously.
Description of drawings
Fig. 1 is the internal structure sketch map of existing single-row direct insertion full-wave rectification bridge heap.
Fig. 2 is the structural representation of the embodiment of the invention 1.
Fig. 3 is the structural representation of the embodiment of the invention 2.
Fig. 4 is the structural representation of the embodiment of the invention 3.
Fig. 5 is the structural representation of the embodiment of the invention 4.
Fig. 6 is the structural representation of the embodiment of the invention 5.
Fig. 7 is the structural representation of the embodiment of the invention 6.
Fig. 8 is the structural representation of the embodiment of the invention 7.
Fig. 9 is the structural representation of the embodiment of the invention 8.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, below in conjunction with concrete accompanying drawing and embodiment, further set forth the present invention.
Referring to Fig. 2; The small-sized bridge heap of in-line arrangement shown in the figure; Comprise a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100; Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical; Become rectangular configuration, the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the two ends of packaging body 100, between leave one section room; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the negative pole end of diode chip for backlight unit 510, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the negative pole end of diode chip for backlight unit 520, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected with brace 320; Lead-in wire 610,620 constitutes the ac input end of bridge heap; The ailhead of 630 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with support chip 210, the ailhead of 640 stiff ends that go between is fixedly connected the cathode output end of piling as bridge with support chip 220.Lead-in wire 610,620 as ac input end lays respectively at packaging body 100 centre positions, is positioned at the two ends of packaging body 100 as the lead-in wire 630,640 of positive and negative electrode output.
Referring to Fig. 3; The small-sized bridge heap of in-line arrangement shown in the figure; Comprise a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100; Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical; Become rectangular configuration, the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the two ends of packaging body 100, between leave one section room; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the positive terminal of diode chip for backlight unit 510, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the positive terminal of diode chip for backlight unit 520, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected with brace 320; Lead-in wire 610,620 constitutes the ac input end of bridge heap; The ailhead of 630 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with support chip 210, the ailhead of 640 stiff ends that go between is fixedly connected the cathode output end of piling as bridge with support chip 220.Lead-in wire 610,620 as ac input end lays respectively at packaging body 100 centre positions, is positioned at the two ends of packaging body 100 as the lead-in wire 630,640 of positive and negative electrode output.
Embodiment 3
Referring to Fig. 4; The small-sized bridge heap of in-line arrangement shown in the figure; Comprise a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100; Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical; Become rectangular configuration, the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the two ends of packaging body 100, between leave one section room; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the positive terminal of diode chip for backlight unit 510, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the negative pole end of diode chip for backlight unit 520, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 320; The ailhead of 630 stiff ends of going between is fixedly connected with support chip 210; The ailhead of 640 stiff ends of going between is fixedly connected with support chip 220, and lead-in wire 630,640 constitutes the ac input end of bridges heap.Lay respectively at the two ends of packaging body 100 as the lead-in wire 630,640 of ac input end, be positioned at the centre position of packaging body 100 as the lead-in wire 610,620 of positive and negative electrode output.
Embodiment 4
Referring to Fig. 5; The small-sized bridge heap of in-line arrangement shown in the figure; Comprise a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100; Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical; Become rectangular configuration, the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the two ends of packaging body 100, between leave one section room; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the negative pole end of diode chip for backlight unit 510, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the positive terminal of diode chip for backlight unit 520, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 320; The ailhead of 630 stiff ends of going between is fixedly connected with support chip 210; The ailhead of 640 stiff ends of going between is fixedly connected with support chip 220, and lead-in wire 630,640 constitutes the ac input end of bridges heap.Lay respectively at the two ends of packaging body 100 as the lead-in wire 630,640 of ac input end, be positioned at the centre position of packaging body 100 as the lead-in wire 620,610 of positive and negative electrode output.
Embodiment 5
Referring to Fig. 6; The small-sized bridge heap of in-line arrangement shown in the figure comprises a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100.Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical, become rectangular configuration, and the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the centre position of packaging body 100; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the negative pole end of diode chip for backlight unit 510, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the negative pole end of diode chip for backlight unit 520, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected with brace 320; Lead-in wire 610,620 constitutes the ac input end of bridge heap; The ailhead of 630 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with support chip 210, the ailhead of 640 stiff ends that go between is fixedly connected the cathode output end of piling as bridge with support chip 220.Lay respectively at the two ends of packaging body 100 as the lead-in wire 610,620 of ac input end, be positioned at the centre position of packaging body 100 as the lead-in wire 630,640 of positive and negative electrode output.
Embodiment 6
Referring to Fig. 7; The small-sized bridge heap of in-line arrangement shown in the figure comprises a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100.Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical, become rectangular configuration, and the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the centre position of packaging body 100; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the positive terminal of diode chip for backlight unit 510, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the positive terminal of diode chip for backlight unit 520, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected with brace 320; Lead-in wire 610,620 constitutes the ac input end of bridge heap; The ailhead of 630 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with support chip 210, the ailhead of 640 stiff ends that go between is fixedly connected the cathode output end of piling as bridge with support chip 220.Lay respectively at the two ends of packaging body 100 as the lead-in wire 610,620 of ac input end, be positioned at the centre position of packaging body 100 as the lead-in wire 640,630 of positive and negative electrode output.
Embodiment 7
Referring to Fig. 8; The small-sized bridge heap of in-line arrangement shown in the figure comprises a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100.Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical, become rectangular configuration, and the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the centre position of packaging body 100; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the positive terminal of diode chip for backlight unit 510, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the negative pole end of diode chip for backlight unit 520, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 320; The ailhead of 630 stiff ends of going between is fixedly connected with support chip 210; The ailhead of 640 stiff ends of going between is fixedly connected with support chip 220, and lead-in wire 630,640 constitutes the ac input end of bridges heap.Lay respectively at the centre position of packaging body 100 as the lead-in wire 630,640 of ac input end, be positioned at the end positions of packaging body 100 as the lead-in wire 610,620 of positive and negative electrode output.
Embodiment 8
Referring to Fig. 9; The small-sized bridge heap of in-line arrangement shown in the figure comprises a packaging body 100 and 510,520,530,540 and four lead-in wires 610,620,630,640 of two support chips 210,220,310,320, four diode chip for backlight unit of two bump contacted chips that are arranged in the packaging body 100.Two bump contacted chips, 310,320 structures are identical, become meander-like, and the structure of two support chips 210,220 is also identical, become rectangular configuration, and the structure of four lead-in wires 610,620,630,640 is also identical.
On bridge heap thickness direction, two bump contacted chips 310,320 are positioned at the upper strata, and four diode chip for backlight unit 510,520,530,540 are positioned at the intermediate layer, and two support chips 210,220 are positioned at lower floor.Four lead-in wires 610,620,630,640 are parallel by extending out in the envelope shape body 100 and parallel with the normal direction of four diode chip for backlight unit 510,520,530,540.Four the lead-in wire 610,620,630,640 be positioned at packaging body 100 stiff end be provided with ailhead.
On the top plan view of bridge heap, whole packaging body 100 is structure into strips, and two support chips 210,220 are positioned at the centre position of packaging body 100; Four lead-in wires 610,620,630,640 one-tenth one arranged.
One end of brace 310 is fixedly connected with the negative pole end of diode chip for backlight unit 510, and the other end is fixedly connected with the negative pole end of diode chip for backlight unit 530; One end of brace 320 is fixedly connected with the positive terminal of diode chip for backlight unit 520, and the other end is fixedly connected with the positive terminal of diode chip for backlight unit 540.
The ailhead of 610 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 310; The ailhead of 620 stiff ends of going between is fixedly connected the cathode output end as the bridge heap with brace 320; The ailhead of 630 stiff ends of going between is fixedly connected with support chip 210; The ailhead of 640 stiff ends of going between is fixedly connected with support chip 220, and lead-in wire 630,640 constitutes the ac input end of bridges heap.Lay respectively at the centre position of packaging body 100 as the lead-in wire 630,640 of ac input end, be positioned at the end positions of packaging body 100 as the lead-in wire 620,610 of positive and negative electrode output.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection range to be defined by appending claims and equivalent thereof.
Claims (8)
1. the small-sized bridge of in-line arrangement heap comprises a packaging body and is arranged on two support chips in the packaging body, two bump contacted chips, four diode chip for backlight unit and by four lead-in wires that extend out in the said envelope shape body; On bridge heap thickness direction, two bump contacted chips are positioned at the upper strata, and four diode chip for backlight unit are positioned at the intermediate layer, and two support chips are positioned at lower floor; On the top plan view of bridge heap; Be fixedly connected with two diode chip for backlight unit on each piece support chip; And each bump contacted chip respectively with two support chips on each diode chip for backlight unit be fixedly connected; It is characterized in that whole packaging body is structure into strips, said four diode chip for backlight unit become an arranged; Said four lead-in wires are parallel-laid into a row by extending out in the said envelope shape body and laterally arranging with the normal direction of four diode chip for backlight unit, and said four lead-in wires are fixedly connected with two bump contacted chips with two support chips respectively and constitute positive and negative electrode output and the ac input end that bridge is piled.
2. the small-sized bridge heap of in-line arrangement as claimed in claim 1; It is characterized in that; Said two support chips lay respectively at the two ends in the said packaging body; Two lead-in wires that are fixedly connected with two support chips lay respectively at the two ends of said packaging body simultaneously, and other two lead-in wires that are fixedly connected with said two bump contacted chips respectively are positioned at the centre of packaging body.
3. the small-sized bridge heap of in-line arrangement as claimed in claim 1; It is characterized in that; Said two support chips are disposed immediately in the centre in the said packaging body; Two lead-in wires that are fixedly connected with two support chips lay respectively at the centre of said packaging body simultaneously, and other two lead-in wires that are fixedly connected with said two bump contacted chips respectively lay respectively at the two ends of packaging body.
4. like claim 1 or the small-sized bridge heap of 2 or 3 described in-line arrangement; It is characterized in that; Said two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the positive terminal of first, second diode chip for backlight unit is fixedly connected with first support chip, and the negative pole end of the 3rd, the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the negative pole end of first diode chip for backlight unit and the positive terminal of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the negative pole end of second diode chip for backlight unit and the positive terminal of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected with first brace; Second lead-in wire is fixedly connected with second brace; First and second lead-in wire is as ac input end, and the 3rd lead-in wire is fixedly connected with first support chip and constitutes cathode output end, and the 4th lead-in wire is fixedly connected as cathode output end with second support chip.
5. like claim 1 or the small-sized bridge heap of 2 or 3 described in-line arrangement; It is characterized in that; Said two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the negative pole end of first, second diode chip for backlight unit is fixedly connected with first support chip, and the positive terminal of the 3rd, the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the positive terminal of first diode chip for backlight unit and the negative pole end of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the positive terminal of second diode chip for backlight unit and the negative pole end of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected with first brace; Second lead-in wire is fixedly connected with second brace; First and second lead-in wire is as ac input end, and the 3rd lead-in wire is fixedly connected with first support chip and constitutes cathode output end, and the 4th lead-in wire is fixedly connected as cathode output end with second support chip.
6. like claim 1 or the small-sized bridge heap of 2 or 3 described in-line arrangement; It is characterized in that; Said two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the negative pole end of the positive terminal of first diode chip for backlight unit and second diode chip for backlight unit is fixedly connected with first support chip, and the negative pole end of the positive terminal of the 3rd diode chip for backlight unit and the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the negative pole end of first diode chip for backlight unit and the negative pole end of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the positive terminal of second diode chip for backlight unit and the positive terminal of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected as cathode output end with first brace; Second lead-in wire is fixedly connected as cathode output end with second brace, and third and fourth goes between as ac input end.
7. like claim 1 or the small-sized bridge heap of 2 or 3 described in-line arrangement; It is characterized in that; Said two support chips are divided into first, second support chip; Two bump contacted chips are divided into first, second brace, and four lead-in wires are divided into first, second, third, fourth lead-in wire, and four diode chip for backlight unit are divided into first, second, third, fourth diode chip for backlight unit; Wherein the positive terminal of the negative pole end of first diode chip for backlight unit and second diode chip for backlight unit is fixedly connected with first support chip, and the positive terminal of the negative pole end of the 3rd diode chip for backlight unit and the 4th diode chip for backlight unit is fixedly connected with second support chip; First brace is fixedly connected with the positive terminal of first diode chip for backlight unit and the positive terminal of the 3rd diode chip for backlight unit; Second brace is fixedly connected with the negative pole end of second diode chip for backlight unit and the negative pole end of the 4th diode chip for backlight unit; Wherein first lead-in wire is fixedly connected as cathode output end with first brace; Second lead-in wire is fixedly connected as cathode output end with second brace, and third and fourth goes between as ac input end.
8. like claim 1 or the small-sized bridge heap of 2 or 3 described in-line arrangement, it is characterized in that the structure of said two bump contacted chips is identical, the structure of two support chips is identical, and the structure of four lead-in wires is identical.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110161681.6A CN102832205B (en) | 2011-06-15 | 2011-06-15 | In-line small bridge rectifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110161681.6A CN102832205B (en) | 2011-06-15 | 2011-06-15 | In-line small bridge rectifier |
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| CN102832205A true CN102832205A (en) | 2012-12-19 |
| CN102832205B CN102832205B (en) | 2015-07-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473386A (en) * | 2018-12-28 | 2019-03-15 | 乐山希尔电子股份有限公司 | A kind of semiconductor devices assemble method and its production line |
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| CN102832205B (en) | 2015-07-08 |
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