CN102736400B - 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 - Google Patents

防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 Download PDF

Info

Publication number: CN102736400B
Authority: CN; China
Prior art keywords: dustproof film; dustproof; absorbing layer; film; layer
Prior art date: 2011-03-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CN201210091249.9A

Other languages

English (en)

Chinese (zh)

Other versions

CN102736400A (zh

Inventor

関原一敏

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Chemical Co Ltd

Original Assignee

Shin Etsu Chemical Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-03-31

Filing date

2012-03-30

Publication date

2014-02-05

2012-03-30 Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd

2012-10-17 Publication of CN102736400A publication Critical patent/CN102736400A/zh

2014-02-05 Application granted granted Critical

2014-02-05 Publication of CN102736400B publication Critical patent/CN102736400B/zh

Status Expired - Fee Related legal-status Critical Current

2032-03-30 Anticipated expiration legal-status Critical

Links

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Images

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Life Sciences & Earth Sciences (AREA)
Atmospheric Sciences (AREA)
Health & Medical Sciences (AREA)
Epidemiology (AREA)
Public Health (AREA)
Engineering & Computer Science (AREA)
Environmental & Geological Engineering (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)

CN201210091249.9A 2011-03-31 2012-03-30 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 Expired - Fee Related CN102736400B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2011077976A JP5279862B2 (ja)	2011-03-31	2011-03-31	ペリクル膜、その製造方法及び該膜を張ったペリクル
JP2011-077976		2011-03-31

Publications (2)

Publication Number	Publication Date
CN102736400A CN102736400A (zh)	2012-10-17
CN102736400B true CN102736400B (zh)	2014-02-05

Family

ID=46992129

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201210091249.9A Expired - Fee Related CN102736400B (zh)	2011-03-31	2012-03-30	防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件

Country Status (5)

Country	Link
JP (1)	JP5279862B2 (ja)
KR (1)	KR20120111997A (ja)
CN (1)	CN102736400B (ja)
HK (1)	HK1174397A1 (ja)
TW (1)	TWI446104B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4463473B2 (ja)	2000-12-15	2010-05-19	ジ・アリゾナ・ボード・オブ・リージェンツ	前駆体を含有するナノ粒子を用いた金属のパターニング方法
TWI578096B (zh) *	2013-03-22	2017-04-11	V科技股份有限公司	校正用光罩及校正方法
SG11201701805QA (en)	2014-09-19	2017-04-27	Mitsui Chemicals Inc	Pellicle, production method thereof, exposure method
CN106796391B (zh)	2014-09-19	2020-02-11	三井化学株式会社	防护膜组件、防护膜组件的制造方法及使用了防护膜组件的曝光方法
US10031411B2 (en)	2014-11-26	2018-07-24	Taiwan Semiconductor Manufacturing Company, Ltd.	Pellicle for EUV mask and fabrication thereof
JP2018049256A (ja)	2016-04-05	2018-03-29	旭化成株式会社	ペリクル
TWI641783B (zh)	2016-09-02	2018-11-21	蔡惟名	Gas burner and its safety switch
KR20190038369A (ko) *	2017-09-29	2019-04-08	아사히 가세이 가부시키가이샤	펠리클

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0588359A (ja) *	1991-09-26	1993-04-09	Shin Etsu Chem Co Ltd	リソグラフイ−用ペリクル
JPH10139932A (ja) *	1996-11-05	1998-05-26	Asahi Chem Ind Co Ltd	ペリクルの製造方法及びそれにより得られたペリクル
CN1591181A (zh) *	2003-08-27	2005-03-09	信越化学工业株式会社	光刻用掩模护层
WO2010058586A1 (ja) *	2008-11-21	2010-05-27	旭化成イーマテリアルズ株式会社	ペリクル膜、ｔｆｔ液晶パネル製造用マスクとともに用いるペリクル、及び該ペリクルを含むフォトマスク

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0594006A (ja) *	1991-10-01	1993-04-16	Asahi Chem Ind Co Ltd	耐光性ペリクル

2011
- 2011-03-31 JP JP2011077976A patent/JP5279862B2/ja not_active Expired - Fee Related
2012
- 2012-02-21 KR KR1020120017363A patent/KR20120111997A/ko not_active Application Discontinuation
- 2012-03-30 TW TW101111217A patent/TWI446104B/zh not_active IP Right Cessation
- 2012-03-30 CN CN201210091249.9A patent/CN102736400B/zh not_active Expired - Fee Related
2013
- 2013-01-28 HK HK13101203.6A patent/HK1174397A1/xx not_active IP Right Cessation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0588359A (ja) *	1991-09-26	1993-04-09	Shin Etsu Chem Co Ltd	リソグラフイ−用ペリクル
JPH10139932A (ja) *	1996-11-05	1998-05-26	Asahi Chem Ind Co Ltd	ペリクルの製造方法及びそれにより得られたペリクル
CN1591181A (zh) *	2003-08-27	2005-03-09	信越化学工业株式会社	光刻用掩模护层
WO2010058586A1 (ja) *	2008-11-21	2010-05-27	旭化成イーマテリアルズ株式会社	ペリクル膜、ｔｆｔ液晶パネル製造用マスクとともに用いるペリクル、及び該ペリクルを含むフォトマスク

Also Published As

Publication number	Publication date
TWI446104B (zh)	2014-07-21
CN102736400A (zh)	2012-10-17
JP5279862B2 (ja)	2013-09-04
KR20120111997A (ko)	2012-10-11
TW201305721A (zh)	2013-02-01
JP2012212043A (ja)	2012-11-01
HK1174397A1 (en)	2013-06-07

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2012-12-12	SE01	Entry into force of request for substantive examination
2013-06-07	REG	Reference to a national code	Ref country code: HK Ref legal event code: DE Ref document number: 1174397 Country of ref document: HK
2014-02-05	C14	Grant of patent or utility model
2014-02-05	GR01	Patent grant
2023-03-10	CF01	Termination of patent right due to non-payment of annual fee
2023-03-10	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20140205

Publication	Publication Date	Title
CN102736400B (zh)	2014-02-05	防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件
KR102089835B1 (ko)	2020-03-16	필름 마스크, 이의 제조방법 및 이를 이용한 패턴 형성 방법
TW200813618A (en)	2008-03-16	Pellicle for lithography
WO2009062665A3 (en)	2009-09-03	Optical element for the reflection of uv radiation, method for manufacturing the same and projection exposure apparatus comprising the same
TW201109839A (en)	2011-03-16	Pellicle frame and lithographic pellicle
JP2011076042A (ja)	2011-04-14	ペリクル
JP2013097308A (ja)	2013-05-20	ペリクル
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JP4903829B2 (ja)	2012-03-28	リソグラフィ用ペリクル
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