CN102543107A - Manufacture method of nano point array with perpendicular magnetic anisotropy - Google Patents
Manufacture method of nano point array with perpendicular magnetic anisotropy Download PDFInfo
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- CN102543107A CN102543107A CN2010105758671A CN201010575867A CN102543107A CN 102543107 A CN102543107 A CN 102543107A CN 2010105758671 A CN2010105758671 A CN 2010105758671A CN 201010575867 A CN201010575867 A CN 201010575867A CN 102543107 A CN102543107 A CN 102543107A
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Abstract
The invention relates to a manufacture method of a nano structure material capable of being applied to high-density magnetic storage, and in particular relates to a manufacture method of a nano point array with perpendicular magnetic anisotropy. The manufacture method comprises the following steps of: 1, manufacturing a substrate: manufacturing a single-layer hexagonal close-packed colloid array spherical substrate by adopting a self-assembly technology; and 2, depositing a two-layer film: depositing a Co/Pt multilayer film on the colloid array spherical substrate manufactured in the step 1 by adopting a sputtering technology to ensure that a thickness of a film of a sphere gap is only 2/3 of that of a film on the top of a sphere, so as to obtain a nano point with the perpendicular magnetic anisotropy. The nano point array manufactured by adopting the manufacture method has a complete edge structure, good storage property and strong perpendicular magnetic anisotropy.
Description
Technical field
The present invention relates to a kind of preparation method who can be applicable to the nano structural material of high density magnetic storage, a kind of specifically preparation method with perpendicular magnetic anisotropic nanometer lattice row.
Background technology
Along with the develop rapidly of information industry, high density, high capacity, high-speed and cheaply information stores receive people and pay close attention to greatly.Compare with the out of Memory storage mode, magnetic storage has advantages such as record performance excellence, applying flexible, low price, technical development potentiality be big, is a major technique of contemporary information stores.From the raising at full speed of magnetic recording density in recent years recording mode and recording medium are had higher requirement, make traditional longitudinal recording mode and recording medium be faced with serious challenge.
Perpendicular magnetic recording is considered to the high density magnetic storage now has most a kind of recording mode of prospect, and the storage density of theoretical prediction can be up to 1Tb/in
2Compare with traditional longitudinal recording, the characteristics of perpendicular recording are that DOM is vertical with face, and demagnetizing field reduces with the increase of recording density, so the negative effect of demagnetizing field reduces.And, attracting each other between the phase ortho position in the perpendicular recording medium, magnetization stability is very high.Therefore, under the situation of perpendicular recording, can adopt thicker medium, moderate medium coercive force H
CWith saturation magnetization M
s, high perpendicular magnetic anisotropy material, obtain higher recording density.
In recent years, along with the develop rapidly of information industry, magnetic recording density improves constantly, and nano dot structure arrays such as the figure line structure that the various cycles of multilayer film arrange such as point-like, column, ring-type and plate-like etc. begin to cause people's attention.In the nano dot structure array; Parameters such as size, structure, shape have appreciable impact to anisotropy; Especially when the size of figure line structure can be intended with domain wall size and critical single domain size compared; Can realize having the magnetic Nano point of one-domain structure, for realizing that the high density storage is significant.
Present most nanostructured all is that the method through the etching continuous film obtains, and said method unavoidably causes destruction in various degree to film, and its shortcoming and defect is in particular in: 1. the nano dot edge is impaired serious; 2. perpendicular magnetic anisotropic variation; 3. reduce the signal to noise ratio (S/N ratio) of medium.Prepare complete, to have the perpendicular magnetic anisotropy nanometer lattice row be one of present important subject.
Summary of the invention
The objective of the invention is to be intended to utilize the nano-colloid ball array of self assembly to come that preparation size is controlled, the nano-structure array of the Co/Pt multilayer film of structural integrity, the preparation method of the nanometer lattice row that a kind of marginal texture is complete, memory property good, perpendicular magnetic anisotropy is strong is provided.
The objective of the invention is to realize like this, this preparation method may further comprise the steps:
1., the preparation of substrate, adopt self-assembling technique to prepare at the bottom of the colloid array spherical bush that individual layer is hexagonal Mi Dui.
2., duplicature deposition, adopt sputtering technology deposition Co/Pt multilayer film at the bottom of the colloid array spherical bush that step makes in 1..Form the curved surface nano dot at the bead top; Form the nano dot of triangle at the globular spaces of Czermak place; The film thickness of the globular spaces of Czermak that obtains like this is merely 2/3 of bead top film thickness, thereby obtains to have the perpendicular magnetic anisotropic nanometer lattice row at the colloidal spheres top.
During deposit film, the thickness of film reduces along sphere gradually at the bottom of the said colloid array spherical bush, and its thickness relationship formula is t=t
0Sin θ.When θ less than particular value θ
cThe time, said Co/Pt multilayer film sublayer boundary disappears, and forms alloy.Co layer and Pt layer thickness make this alloy not have perpendicular magnetic anisotropic; Has only θ greater than θ
cThe part film have magnetic anisotropy.
It is said when Mi Dui arranges on the colloid monolayer ball array substrate deposit film; Shadow effect makes the film thickness of globular spaces of Czermak be merely 2/3 of bead top film thickness; Pass globular spaces of Czermak and deposit to the film on the substrate; Cut down 1/3 and formed alloy owing to thickness, do not had magnetic anisotropy.
The present invention has the following advantages and good effect:
1, film growth is the final step of preparation process, need not the subsequent etching process, can obtain the undamaged nano-structure array with perpendicular magnetic anisotropic in border;
2, change the size that colloidal spheres size or depositing of thin film thickness just can be controlled nano dot;
3, the magnetic Nano structure array magnetic between the colloidal spheres does not have influence;
4, the method can be applied to the various performance materials with thickness dependence.Change the colloidal spheres size, can control density with certain physical property nano dot.
Description of drawings
Fig. 1 is that the present invention utilizes self-assembling technique to prepare colloid monolayer ball process synoptic diagram.
Fig. 2 is a colloid array spherical bush bottom structure synoptic diagram of the present invention.
Fig. 3 is that Mi Dui of the present invention arranges the film that deposits on the colloid monolayer ball array substrate, on the substrate of colloidal spheres top and globular spaces of Czermak, forms the nanostructured synoptic diagram.
Fig. 4 is that the present invention adopts sputtering technology at the bottom of the colloid array spherical bush, to deposit the nanostructured synoptic diagram that the Co/Pt multilayer film has perpendicular magnetic anisotropic.
Embodiment
At first adopt self-assembling technique to prepare at the bottom of the colloid array spherical bush that individual layer is hexagonal Mi Dui, in accompanying drawing 1 a, the colloid bead is spread over the water surface; B, the bead individual layer is closely packed in form orderly monofilm together; C, orderly monofilm is transferred on the substrate.The colloid monolayer array that forms is the close pile structure of hexagonal (shown in an accompanying drawing 2).
Concrete steps are: silicon substrate was soaked 24 hours in 10% sodium dodecyl sulfate solution, obtain hydrophilic substrate surface.Get 5 milliliters and be the polystyrene colloid solution of 10wt.%, dilute with 5 milliliters ethanol, take out about 5 microlitres then and drop in the substrate surface that soaked, solvent is sprawled at substrate surface together with bead and is come.Substrate slice is immersed in the container that fills deionized water lentamente, and the cross-sectional area of container is 19.5 * 19.5 square centimeters.Because the water surface tension effect is at the monofilm of water surface formation one deck PS colloid bead.In container, splash into 4 microlitre concentration again and be 2% sodium dodecyl sulfate solution.Left standstill at ambient temperature about 10 minutes, and with the substrate slice that soaked the PS glomerular membrane was got again, in air, can form individual layer PS sequential 2 D array in surface of silicon behind the natural volatile dry.The specific operation process synoptic diagram is seen accompanying drawing 1.
Shown in accompanying drawing 3: adopt sputtering technology at the bottom of the colloid array spherical bush that makes, to deposit the Co/Pt multilayer film.Form the curved surface nano dot at the bead top, form the nano dot of triangle at the globular spaces of Czermak place, shown in arrow among Fig. 2.The film thickness of the globular spaces of Czermak that obtains like this is merely 2/3 of bead top film thickness, thereby obtains to have the perpendicular magnetic anisotropic nanometer lattice row at the colloidal spheres top.
It is said when Mi Dui arranges on the colloid monolayer ball array substrate deposit film; Shadow effect makes the film thickness of globular spaces of Czermak be merely 2/3 of bead top film thickness; Pass globular spaces of Czermak and deposit to the film on the substrate; Cut down 1/3 and formed alloy owing to thickness, do not had perpendicular magnetic anisotropic.
Shown in accompanying drawing 4: during deposit film, the thickness of film reduces along sphere gradually at the bottom of the said colloid array spherical bush, and its thickness relationship formula is t=t
0Sin θ.When θ less than a certain critical angle θ
cThe time, the multilayer film interface disappears, and forms alloy, and this part multilayer film is exhibit perpendicular magnetic anisotropy not; For angle greater than θ
cThe time, this part multilayer film has perpendicular magnetic anisotropic.
Said deposition Co/Pt multilayer film film sublayer thickness C o is 0.5-2.0nm, during Pt0.8-3nm, produces the corresponding angle θ of nanostructured of perpendicular magnetic anisotropic
cBe 30-15o.
Claims (6)
1. preparation method with perpendicular magnetic anisotropic nanometer lattice row, it is characterized in that: this preparation method may further comprise the steps:
1., the preparation of substrate, adopt self-assembling technique to prepare at the bottom of the colloid array spherical bush that individual layer is hexagonal Mi Dui;
2., duplicature deposition, adopt at the bottom of the colloid array spherical bush that sputtering technology makes in 1. on deposition Co/Pt multilayer film, make the film thickness of globular spaces of Czermak be merely 2/3 of bead top film thickness, thereby obtain to have the perpendicular magnetic anisotropic nano dot.
2. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1 is characterized in that: the step that said preparation individual layer is at the bottom of the colloid array spherical bush of hexagonal Mi Dui comprises: a, the colloid bead is spread over the water surface; B, the bead individual layer is closely packed in form orderly monofilm together; C, orderly monofilm is transferred on the substrate.
3. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1 is characterized in that: during deposit film, the thickness of film reduces along sphere gradually at the bottom of the said colloid array spherical bush, and its thickness relationship formula is t=t
0Sin θ.
4. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1 is characterized in that: there is the critical angle θ that produces perpendicular magnetic anisotropic in said Co/Pt multilayer film
c, for angle less than θ
cThe time, this multilayer film is exhibit perpendicular magnetic anisotropy not; For angle greater than θ
cThe time, this multilayer film has perpendicular magnetic anisotropic.
5. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1; It is characterized in that: said when Mi Dui arranges on the colloid monolayer ball array substrate deposit film; Shadow effect makes the film thickness of globular spaces of Czermak be merely 2/3 of bead top film thickness; Pass globular spaces of Czermak and deposit to the film on the substrate, cut down 1/3 and form alloy, do not have a perpendicular magnetic anisotropic owing to thickness.
6. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1; It is characterized in that: said deposition Co/Pt multilayer film film sublayer thickness C o is 0.5-2.0nm; When Pt is 0.8-3nm, produce the corresponding angle θ of nanostructured of perpendicular magnetic anisotropic
cBe 30-15o.
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| CN201010575867.1A CN102543107B (en) | 2010-12-07 | 2010-12-07 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456319A (en) * | 2013-07-18 | 2013-12-18 | 江苏海纳磁性纳米新材料科技有限公司 | Self-assembly magnetic memorizer and forming method thereof |
| CN107195771A (en) * | 2017-05-02 | 2017-09-22 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725438A (en) * | 2005-05-27 | 2006-01-25 | 清华大学 | Preparation method of silicon and silicon germanium quantum point array |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725438A (en) * | 2005-05-27 | 2006-01-25 | 清华大学 | Preparation method of silicon and silicon germanium quantum point array |
Non-Patent Citations (2)
| Title |
|---|
| 刘慧莲等: "纳米胶体球表面生长的Co/Pt多层膜的磁性研究", 《四川师范大学学报》 * |
| 郑晓光等: "利用自组装技术制备二维胶体球整列", 《吉林师范大学学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456319A (en) * | 2013-07-18 | 2013-12-18 | 江苏海纳磁性纳米新材料科技有限公司 | Self-assembly magnetic memorizer and forming method thereof |
| CN103456319B (en) * | 2013-07-18 | 2014-12-31 | 江苏海纳精密装备有限公司 | Self-assembly magnetic memorizer and forming method thereof |
| CN107195771A (en) * | 2017-05-02 | 2017-09-22 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
| CN107195771B (en) * | 2017-05-02 | 2019-10-25 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
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