CN102543107B - Manufacture method of nano point array with perpendicular magnetic anisotropy - Google Patents
Manufacture method of nano point array with perpendicular magnetic anisotropy Download PDFInfo
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- CN102543107B CN102543107B CN201010575867.1A CN201010575867A CN102543107B CN 102543107 B CN102543107 B CN 102543107B CN 201010575867 A CN201010575867 A CN 201010575867A CN 102543107 B CN102543107 B CN 102543107B
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Abstract
The invention relates to a manufacture method of a nano structure material capable of being applied to high-density magnetic storage, and in particular relates to a manufacture method of a nano point array with perpendicular magnetic anisotropy. The manufacture method comprises the following steps of: 1, manufacturing a substrate: manufacturing a single-layer hexagonal close-packed colloid array spherical substrate by adopting a self-assembly technology; and 2, depositing a two-layer film: depositing a Co/Pt multilayer film on the colloid array spherical substrate manufactured in the step 1 by adopting a sputtering technology to ensure that a thickness of a film of a sphere gap is only 2/3 of that of a film on the top of a sphere, so as to obtain a nano point with the perpendicular magnetic anisotropy. The nano point array manufactured by adopting the manufacture method has a complete edge structure, good storage property and strong perpendicular magnetic anisotropy.
Description
Technical field
The present invention relates to a kind of preparation method of the nano structural material that can be applicable to high density magnetic storage, specifically a kind of preparation method with perpendicular magnetic anisotropic nanometer lattice row.
Background technology
Along with the develop rapidly of information industry, high density, large capacity, at a high speed and information storage be cheaply subject to people and pay close attention to greatly.Compared with out of Memory storage mode, magnetic storage has the advantages such as record performance excellence, applying flexible, low price, technical development potentiality be large, is a major technique of Contemporary Information storage.From the raising at full speed of magnetic recording density in recent years, recording mode and recording medium are had higher requirement, make traditional longitudinal recording mode and recording medium be faced with serious challenge.
Perpendicular magnetic recording is considered to high density magnetic storage now most a kind of recording mode of prospect, and the storage density of theoretical prediction can be up to 1Tb/in
2.Compared with traditional longitudinal recording, the feature of perpendicular recording is that direction of magnetization is vertical with face, and demagnetizing field reduces with the increase of recording density, and therefore the negative effect of demagnetizing field reduces.And, in perpendicular recording medium, between phase ortho position, attracting each other, magnetization stability is very high.Therefore,, the in the situation that of perpendicular recording, can adopt thicker medium, moderate medium coercive force HC and saturation magnetization M
s, high perpendicular magnetic anisotropy material, obtain higher recording density.
In recent years, along with the develop rapidly of information industry, magnetic recording density improves constantly, and the figure line structure of arranging of various cycles of multilayer film starts to cause people's attention as the nano dot structure arrays such as point-like, column, ring-type and plate-like etc.In nano dot structure array, the parameters such as size, structure, shape have appreciable impact to anisotropy, especially when the size of figure line structure can be with domain wall size and critical single domain size when comparable, can realize the magnetic Nano point with one-domain structure, for realizing, high density storage is significant.
Current most nanostructured is all to obtain by the method for etching continuous film, and said method unavoidably causes destruction in various degree to film, and its shortcoming and defect is in particular in: 1. nano dot edge is impaired serious; 2. perpendicular magnetic anisotropic variation; 3. reduce the signal to noise ratio (S/N ratio) of medium.Prepare complete, to have perpendicular magnetic anisotropy nanometer lattice row be one of current important subject.
Summary of the invention
The object of the invention is to be intended to utilize the nano-colloid ball array of self assembly to prepare
Size is controlled, the nano-structure array of the Co/Pt multilayer film of structural integrity, and the preparation method of the nanometer lattice row that a kind of marginal texture is complete, memory property good, perpendicular magnetic anisotropy is strong is provided.
1., the preparation of substrate the object of the present invention is achieved like this, and this preparation method comprises the following steps:, adopt self-assembling technique to prepare the colloid array spherical lining that individual layer is hexagonal Mi Dui; 2., duplicature deposition, adopt sputtering technology to deposit Co/Pt multilayer film on the colloid array spherical lining making in 1.; It is characterized in that: described deposition Co/Pt multilayer film is to form curved surface nano dot at bead top, form the nano dot of triangle at globular spaces of Czermak place, making the film thickness of the globular spaces of Czermak obtaining is only 2/3 of bead top film thickness, thereby obtains and have perpendicular magnetic anisotropic nanometer lattice row at colloidal spheres top; Described deposition Co/Pt multilayer film film sublayer thickness C o is 0.5-2.0nm, when Pt is 0.8-3nm, produces the angle θ corresponding to nanostructured of perpendicular magnetic anisotropic
cfor 30-15 °, θ
cfor producing the critical angle of perpendicular magnetic anisotropic, be less than θ for angle
ctime, not exhibit perpendicular magnetic anisotropy of this multilayer film; Be greater than θ for angle
ctime, this multilayer film has perpendicular magnetic anisotropic.
Describedly prepare the step that individual layer is the colloid array spherical lining of hexagonal Mi Dui and comprise: a, colloid bead is spread over to the water surface; B, bead individual layer is closely packed in form together orderly monofilm; C, orderly monofilm is transferred on substrate.
On described colloid array spherical lining, when deposit film, the thickness of film reduces gradually along sphere, and its thickness relationship formula is t=t
0sin θ.
When θ is less than particular value θ
ctime, described Co/Pt multilayer film sublayer boundary disappears, and forms alloy.Co layer and Pt layer thickness, make this alloy not have perpendicular magnetic anisotropic; Only have θ to be greater than θ
cpart film there is magnetic anisotropy.
Described while arranging on colloid monolayer ball array substrate deposit film to Mi Dui, it is only 2/3 of bead top film thickness that shadow effect makes the film thickness of globular spaces of Czermak, deposit to the film on substrate through globular spaces of Czermak, cut down 1/3 and formed alloy due to thickness, do not had a perpendicular magnetic anisotropic.
The present invention has the following advantages and good effect:
1, film growth is preparation process final step, without subsequent etching process, can obtain the undamaged nano-structure array with perpendicular magnetic anisotropic in border;
2, the deposit thickness of change colloidal spheres size or film just can be controlled the size of nano dot;
3, the magnetic Nano structure pair array magnetic between colloidal spheres is without impact;
4, the method can be applied to the various performance materials with thickness dependence.Change colloidal spheres size, can control the density with certain physical property nano dot.
Brief description of the drawings
Fig. 1 is that the present invention utilizes self-assembling technique to prepare colloid monolayer ball process schematic diagram.
Fig. 2 is colloid array spherical lining structural representation of the present invention.
Fig. 3 is that Mi Dui of the present invention arranges the film depositing on colloid monolayer ball array substrate, forms nanostructured schematic diagram on the substrate of colloidal spheres top and globular spaces of Czermak.
Fig. 4 is that the present invention adopts sputtering technology to the nanostructured schematic diagram that deposits Co/Pt multilayer film on colloid array spherical lining and have perpendicular magnetic anisotropic.
Embodiment
First adopt self-assembling technique to prepare the colloid array spherical lining that individual layer is hexagonal Mi Dui, in accompanying drawing 1 a, colloid bead is spread over to the water surface; B, bead individual layer is closely packed in form together orderly monofilm; C, orderly monofilm is transferred on substrate.The colloid monolayer array forming is the close pile structure of hexagonal (as shown in Figure 2).
Concrete steps are: silicon substrate is soaked 24 hours in 10% sodium dodecyl sulfate solution, obtain hydrophilic substrate surface.Get 5 milliliters of polystyrene colloidal liquid solutions for 10wt.%, dilute with the ethanol of 5 milliliters, then take out approximately 5 microlitres and drop in the substrate surface soaking, solvent is sprawled and is come at substrate surface together with bead.Substrate slice is immersed lentamente in the container that fills deionized water, the cross-sectional area of container is 19.5 × 19.5 square centimeters.Due to water surface tension effect, form the monofilm of one deck PS colloid bead at water surface.In container, splash into the sodium dodecyl sulfate solution that 4 microlitre concentration are 2% again.Leave standstill approximately 10 minutes at ambient temperature, then PS glomerular membrane is got with the substrate slice soaking, in air, after natural volatile dry, can form individual layer PS two-dimensional ordered array in surface of silicon.Accompanying drawing 1 is shown in by specific operation process schematic diagram.
Shown in accompanying drawing 3: adopt sputtering technology to deposit Co/Pt multilayer film on the colloid array spherical lining making.Form curved surface nano dot at bead top, form the nano dot of triangle at globular spaces of Czermak place, as shown by the arrows in Figure 2.The film thickness of the globular spaces of Czermak obtaining is like this only 2/3 of bead top film thickness, thereby obtains and have perpendicular magnetic anisotropic nanometer lattice row at colloidal spheres top.
Described while arranging on colloid monolayer ball array substrate deposit film to Mi Dui, it is only 2/3 of bead top film thickness that shadow effect makes the film thickness of globular spaces of Czermak, deposit to the film on substrate through globular spaces of Czermak, cut down 1/3 and formed alloy due to thickness, do not there is perpendicular magnetic anisotropic.
Shown in accompanying drawing 4: on described colloid array spherical lining, when deposit film, the thickness of film reduces gradually along sphere, and its thickness relationship formula is t=t
0sin θ.When θ is less than a certain critical angle θ
ctime, multilayer film interface disappears, and forms alloy, not exhibit perpendicular magnetic anisotropy of this part multilayer film; Be greater than θ for angle
ctime, this part multilayer film has perpendicular magnetic anisotropic.
Described deposition Co/Pt multilayer film film sublayer thickness C o is 0.5-2.0nm, when Pt0.8-3nm, produces the angle θ corresponding to nanostructured of perpendicular magnetic anisotropic
cfor 30-15 °.
Claims (4)
1., the preparation of substrate 1. have a preparation method for perpendicular magnetic anisotropic nanometer lattice row, this preparation method comprises the following steps:, adopt self-assembling technique to prepare the colloid array spherical lining that individual layer is hexagonal Mi Dui; 2., duplicature deposition, adopt sputtering technology to deposit Co/Pt multilayer film on the colloid array spherical lining making in 1.; It is characterized in that: described deposition Co/Pt multilayer film is to form curved surface nano dot at bead top, form the nano dot of triangle at globular spaces of Czermak place, making the film thickness of the globular spaces of Czermak obtaining is only 2/3 of bead top film thickness, thereby obtains and have perpendicular magnetic anisotropic nanometer lattice row at colloidal spheres top; Described deposition Co/Pt multilayer film film sublayer thickness C o is 0.5-2.0nm, when Pt is 0.8-3nm, produces the angle θ corresponding to nanostructured of perpendicular magnetic anisotropic
cfor 30-15 °, described θ
cfor producing the critical angle of perpendicular magnetic anisotropic, be less than θ for angle
ctime, not exhibit perpendicular magnetic anisotropy of this multilayer film; Be greater than θ for angle
ctime, this multilayer film has perpendicular magnetic anisotropic.
2. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1, is characterized in that: describedly prepare the step that individual layer is the colloid array spherical lining of hexagonal Mi Dui and comprise: a, colloid bead is spread over to the water surface; B, bead individual layer is closely packed in form together orderly monofilm; C, orderly monofilm is transferred on substrate.
3. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1, is characterized in that: on described colloid array spherical lining, when deposit film, the thickness of film reduces gradually along sphere, and its thickness relationship formula is t=t
0sin θ.
4. the preparation method of a kind of perpendicular magnetic anisotropic nano dot according to claim 1, it is characterized in that: described while arranging on colloid monolayer ball array substrate deposit film to Mi Dui, it is only 2/3 of bead top film thickness that shadow effect makes the film thickness of globular spaces of Czermak, deposit to the film on substrate through globular spaces of Czermak, cut ` and 1/3 formed alloy due to thickness, do not had a perpendicular magnetic anisotropic.
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| CN201010575867.1A CN102543107B (en) | 2010-12-07 | 2010-12-07 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
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|---|---|---|---|
| CN201010575867.1A CN102543107B (en) | 2010-12-07 | 2010-12-07 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
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| CN102543107B true CN102543107B (en) | 2014-07-23 |
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| CN103456319B (en) * | 2013-07-18 | 2014-12-31 | 江苏海纳精密装备有限公司 | Self-assembly magnetic memorizer and forming method thereof |
| CN107195771B (en) * | 2017-05-02 | 2019-10-25 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
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