CN103456319B - Self-assembly magnetic memorizer and forming method thereof - Google Patents
Self-assembly magnetic memorizer and forming method thereof Download PDFInfo
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- CN103456319B CN103456319B CN201310301930.6A CN201310301930A CN103456319B CN 103456319 B CN103456319 B CN 103456319B CN 201310301930 A CN201310301930 A CN 201310301930A CN 103456319 B CN103456319 B CN 103456319B
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- 238000001338 self-assembly Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000003860 storage Methods 0.000 claims abstract description 42
- 239000002077 nanosphere Substances 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 36
- 230000005381 magnetic domain Effects 0.000 claims abstract description 22
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000001808 coupling effect Effects 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000005459 micromachining Methods 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 8
- 239000002096 quantum dot Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The invention provides a self-assembly magnetic memorizer which comprises a memorizer body. The memorizer body comprises a disc-shaped hard disk substrate, a plurality of annular rail grooves are formed in the hard disk substrate by taking the circle center of the hard disk substrate as the center, a silicon dioxide nanosphere array is arranged in the rail grooves, the surfaces, in contact with the air, of silicon dioxide nanospheres are provided with iron platinum thin films, and an iron platinum dot matrix is formed. A forming method of the self-assembly magnetic memorizer comprises the steps that the annular rail grooves are etched in the hard disk substrate with the photoetching technique; the silicon dioxide nanosphere array is prepared in the rail grooves in a nanometer self-assembly micromachining way; the iron platinum thin films are grown on the silicon dioxide nanospheres, and the regular iron platinum dot matrix is formed. The self-assembly magnetic memorizer lowers the coupling effect of magnetic domains to the maximum degree, meets the requirement for high magnetic recording density, and has environmental stability at the same time. The forming method of the self-assembly magnetic memorizer overcomes physical defects of traditional continuous magnetic storage media.
Description
Technical field
The present invention relates to super-high density magnetic technical field of memory, particularly relate to the vertical magnetic storage of a kind of high density, the self assembly magnetic storage memory body that high density discrete media stores, and the formation method of the self assembly magnetic storage memory body of ultrahigh vacuum magnetic material evaporation coating technique and nano-dot matrix self assembly processing.
Background technology
Information operating in computing machine is based upon on scale-of-two basis.This is reflected on fundamental aspect is two kinds of different magnetic domain direction of magnetization in computer disk, respectively corresponding " 0 " and " 1 ".Since computing machine comes out, magnetic recording is just faced with under the prerequisite ensureing storage stability always, constantly promotes the problem of storage density.In disk, the region of each block uniform magnetization is called a magnetic domain, a corresponding byte.Therefore, the size of domain size just directly determines the storage density of disk.The Magnetographic Technology density generally applied in the market is about 100Gb/inch2, and corresponding magnetic domain characteristic dimension is about 100nm.
From physical layer, the coupling effect between adjacent magnetic domains is the theoretical bottleneck that restriction magnetic storage density improves further.Also namely, when the magnetic domain representing two different scale-of-two bytes is close to each other, stronger electromagnetic interference (EMI) can be produced to each other, thus signal is upset.
Distinguish from return to zero, magnetic storage instantly can divide into perpendicular recording and parallel record two kinds.In perpendicular magnetic recording, the direction of magnetization of magnetic domain is vertically arranged in disk plane, and avoided the situation that between adjacent magnetic domains, magnetic pole is relative, coupling effect is low compared with Parallel magnetic recording.
Distinguish from magnetic recording media, magnetic storage can be divided into again continuous medium record and discrete media record two kinds.Discrete media record uses nanometer micro Process means that each magnetic domain of memory carrier is carried out physical segmentation, thus significantly reduces coupling effect, is the important development direction of following magnetic storage.
Except the necessary spacing between magnetic domain, the size of each magnetic domain self is also govern the another physics bottleneck that magnetic storage density promotes further.Also be, the stability of magnetic domain direction of magnetization also exists a quantum physics limit---superparamagnetic limit, when the magnetic anisotropy energy Ea that each magnetic domain is corresponding is reduced to compared with thermal excitation energy KBT (wherein, KB represents Boltzmann constant, T representation temperature), magnetic domain direction of magnetization will overturn because of thermal perturbation, causes the loss of storage information.Magnetic anisotropy can be determined by Ea=KuV (wherein, Ku represents magnetic anisotropic constant, and V represents magnetic domain volume), reduces, thus approach superparamagnetic limit with the reduction of domain size.Therefore, in the pursuit of high-density city, people need from material character, find and possess high magnetic anisotropy constant Ku storage medium.
Summary of the invention
The object of the present invention is to provide the vertical magnetic storage of a kind of high density, the self assembly magnetic storage memory body that high density discrete media stores, and the formation method of the self assembly magnetic storage memory body of ultrahigh vacuum magnetic material evaporation coating technique and nano-dot matrix self assembly processing.
To achieve these goals, self assembly magnetic storage memory body provided by the invention, comprise memory body body, memory body body comprises disc hard disk substrate, hard disk substrate, centered by its center of circle, is provided with some circular orbit grooves, is provided with silica nanosphere array in described orbital groove, the surface of silica nanosphere ingress of air is provided with iron platinum film, forms nanometer Fe-Pt dot matrix; Iron platinum film forms continuous print variation in thickness on silica nanosphere surface with latitudinal gradient, in silica nanosphere edge, thickness is reduced to zero, naturally the magnetic coupling association between adjacent silicon dioxide nanosphere has been isolated, the thickness of iron platinum film peak is 10nm, and the diameter of silica nanosphere is 20nm.
In some embodiments, the width of orbital groove is the integral multiple of silica nanosphere diameter.
In some embodiments, each nanometer Fe-Pt dot matrix forms a single magnetic domain, a corresponding independent binary byte.
The formation method of self assembly magnetic storage memory body, comprises the following steps:
S1: adopt photoetching technique, hard disk substrate etches circular orbit groove;
S2: adopt nanoassemble micro Process means, by the hydrolysis of tetraethoxysilane and the amorphous silica nanosphere array of natural subsidence create-rule on hard disk substrate, wherein the diameter of each silica nanosphere is 20nm;
S3: under UHV condition, iron platinum film is grown on silica nanosphere by the electron beam evaporation plating of normal upright angle, and form continuous print variation in thickness on described silica nanosphere surface with latitudinal gradient, iron platinum film is 10nm at the thickness of peak, in described silica nanosphere edge, thickness is reduced to zero, thus the nanometer Fe-Pt dot matrix of formation rule.
Self assembly magnetic storage memory body of the present invention has the following advantages:
1. self assembly magnetic storage memory body of the present invention, incorporates the double dominant of perpendicular recording and discrete media storage, reduces the coupling effect between magnetic domain to greatest extent; Meanwhile, or few in number ideal materials possessing high magnetic anisotropy constant Ku.Iron platinum magnetic storage memory body is manufactured the nano-dot matrix with periodic structure, and in array, each nano dot forms discrete single magnetic domain, stores the information of a scale-of-two byte.Related science research shows, and such nanometer Fe-Pt dot matrix has the characteristic of perpendicular magnetization, can be used as perpendicular recording carrier.In addition, iron alloy platinum material has high magnetic anisotropy constant 7 × 107ergs/cm3, and not containing rare earth element, has the superiority of environmental stability while meeting high magnetic recording density condition concurrently.
2. the formation method of self assembly magnetic storage memory body of the present invention, based on the high magnetic anisotropy constant of iron alloy platinum material and perpendicular magnetization character, proposes the design and manufacture scheme of discrete nano-dot matrix, breaks through the physics bottleneck of the continuous magnetic storage medium of tradition.
Accompanying drawing explanation
Fig. 1 is the structural representation of the self assembly magnetic storage memory body of one embodiment of the present invention;
Fig. 2 is the structural representation of nanometer Fe-Pt dot matrix in the self assembly magnetic storage memory body shown in Fig. 1.
Embodiment
Explanation that the present invention is described in further detail below in conjunction with drawings and the specific embodiments.
Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 to Fig. 2 show schematically show according to self assembly magnetic storage memory body of one embodiment of the present invention and forming method thereof.
As shown in Figure 1, self assembly magnetic storage memory body of the present invention, comprise memory body body 1, memory body body 1 comprises disc hard disk substrate 101, hard disk substrate 101 is centered by its center of circle, be provided with some circular orbit grooves 1011, in orbital groove 1011, be provided with silica nanosphere 1012 array.
The width of orbital groove 1011 is the integral multiple of silica nanosphere 1012 diameter, restricts the self assembly arrangement of silica nanosphere 1012 thus, makes it regularly be distributed in imperfectly in orbital groove 1011.
The surface of silica nanosphere 1012 ingress of air is provided with iron platinum film 1201, forms nanometer Fe-Pt dot matrix.On silica nanosphere 1012 surface, it forms continuous print variation in thickness with latitudinal gradient to iron platinum film 1201, and in silica nanosphere 1012 edge, thickness is reduced to zero, has naturally isolated the magnetic coupling association between adjacent silicon dioxide nanosphere 1012.In this embodiment of the present invention, the thickness of iron platinum film 1201 peak is 10nm.
To sum up, self assembly magnetic storage memory body of the present invention.Each nanometer Fe-Pt dot matrix forms a single magnetic domain, a corresponding independent binary byte.
The formation method of self assembly magnetic storage memory body, from technological layer, can be realized by nanoassemble micro Process means, comprise the following steps:
S1: adopt photoetching technique, hard disk substrate 101 is etching circular orbit groove 1011;
S2: by nanoassemble micro Process means, prepares silica nanosphere 1012 array in orbital groove 1011;
Its concrete grammar is: by the hydrolysis of tetraethoxysilane and amorphous silica nanosphere 1012 array of natural subsidence create-rule on hard disk substrate 101, chemical reaction is as follows:
Its proportioning is the ethanol of the tetraethoxysilane of 12ml, the distilled water of 30ml, 28% ammoniacal liquor of 7.8ml and 150ml.By this reaction solution with the dilution proportion of 1:50 in straight alcohol, natural subsidence can obtain regularly arranged silica nanosphere 1012 array on glass hard disk substrate 101, and the diameter error of silica nanosphere 1012 is within 5%.
S3: iron platinum film 1201 is grown on silica nanosphere 1012, the nanometer Fe-Pt dot matrix of formation rule.
Its concrete grammar is: under UHV condition, is grown on silica nanosphere 1012 by one deck iron platinum film 1201 by the electron beam evaporation plating of normal upright angle.Using nanometer Fe-Pt dot matrix as storage medium, when single nanosphere diameter is wherein reduced to 20nm, magnetic storage density can reach 1Tb/inch
2.
The self assembly magnetic storage memory body utilizing the formation method of self assembly magnetic storage memory body of the present invention to generate, not only incorporates the double dominant of perpendicular recording and discrete media storage, reduces the coupling effect between magnetic domain to greatest extent; Meanwhile, or few in number ideal materials possessing high magnetic anisotropy constant Ku.Iron platinum magnetic storage memory body is manufactured the nano-dot matrix with periodic structure, and in array, each nano-dot matrix forms discrete single magnetic domain, stores the information of a scale-of-two byte.Related science research show, such nanometer Fe-Pt dot matrix have perpendicular magnetization characteristic, can be used as perpendicular recording carrier.In addition, iron alloy platinum material has high magnetic anisotropy constant 7 × 107ergs/cm
3, and not containing rare earth element, while meeting high magnetic recording density condition, have the superiority of environmental stability concurrently.
Claims (4)
1. self assembly magnetic storage memory body, comprise memory body body (1), described memory body body (1) comprises disc hard disk substrate (101), described hard disk substrate (101) is centered by its center of circle, be provided with some circular orbit grooves (1011), it is characterized in that: in described orbital groove (1011), be provided with silica nanosphere (1012) array, the surface of described silica nanosphere (1012) ingress of air is provided with iron platinum film (1201), forms nanometer Fe-Pt dot matrix; Described iron platinum film (1201) forms continuous print variation in thickness on described silica nanosphere (1012) surface with latitudinal gradient, in described silica nanosphere (1012) edge, thickness is reduced to zero, naturally the magnetic coupling association between adjacent silicon dioxide nanosphere (1012) has been isolated, the thickness of described iron platinum film (1201) peak is 10nm, and the diameter of described silica nanosphere (1012) is 20nm.
2. self assembly magnetic storage memory body according to claim 1, is characterized in that, the width of described orbital groove (1011) is the integral multiple of described silica nanosphere (1012) diameter.
3. self assembly magnetic storage memory body according to claim 2, is characterized in that, nanometer Fe-Pt dot matrix described in each forms a single magnetic domain, a corresponding independent binary byte.
4. the formation method of self assembly magnetic storage memory body, is characterized in that, comprise the following steps:
S1: adopt photoetching technique, hard disk substrate (101) etches circular orbit groove (1011);
S2: adopt nanoassemble micro Process means, by the hydrolysis of tetraethoxysilane and amorphous silica nanosphere (1012) array of natural subsidence create-rule on hard disk substrate (101), wherein the diameter of each silica nanosphere (1012) is 20nm;
S3: under UHV condition, iron platinum film (1201) is grown on silica nanosphere (1012) by the electron beam evaporation plating of normal upright angle, and form continuous print variation in thickness on described silica nanosphere (1012) surface with latitudinal gradient, iron platinum film (1201) is 10nm at the thickness of peak, in described silica nanosphere (1012) edge, thickness is reduced to zero, thus the nanometer Fe-Pt dot matrix of formation rule.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7041394B2 (en) * | 2001-03-15 | 2006-05-09 | Seagate Technology Llc | Magnetic recording media having self organized magnetic arrays |
| CN101100000A (en) * | 2007-06-05 | 2008-01-09 | 暨南大学 | Core-shell structure composite nanometer material and preparation method thereof |
| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
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| JP3861197B2 (en) * | 2001-03-22 | 2006-12-20 | 株式会社東芝 | Manufacturing method of recording medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7041394B2 (en) * | 2001-03-15 | 2006-05-09 | Seagate Technology Llc | Magnetic recording media having self organized magnetic arrays |
| CN101100000A (en) * | 2007-06-05 | 2008-01-09 | 暨南大学 | Core-shell structure composite nanometer material and preparation method thereof |
| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
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