CN107195771A - Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications - Google Patents
Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications Download PDFInfo
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- CN107195771A CN107195771A CN201710301626.XA CN201710301626A CN107195771A CN 107195771 A CN107195771 A CN 107195771A CN 201710301626 A CN201710301626 A CN 201710301626A CN 107195771 A CN107195771 A CN 107195771A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Abstract
The present invention relates to a kind of magnetic Nano lattice array device, substrate including insulating materials and the unit being attached on substrate, unit is rectangular dots array, rectangular dots array is made up of the multi-layered magnetic material with perpendicular magnetic anisotropy, rectangle is equilateral rectangle and its length of side is w, spacing between rectangle is s, and the thickness of rectangle is d, wherein：W ∈ (100nm, 1um), d ∈ (5nm, 50nm), s ∈ (50nm, 1950nm), s:D ∈ (10,5), each sharp corner of each rectangle carries out fillet processing.Spacing change (its excursion is from 100 nanometers to 1950 nanometers) between the nano dot of above-mentioned device has no effect on coercivity and reversion field distribution, and when nano-dot size excursion is less than in 100 nanometers, its coercivity maximum rate of change is about 60% and reversion field distribution maximum rate of change is about 12%.
Description
Technical field
The present invention relates to magnetic device production field, and in particular to a kind of perpendicular magnetic anisotropic magnetic Nano lattice array
Device, preparation method and applications.
Background technology
Magnetic Nano structure devices with perpendicular magnetic anisotropy are due to big coercivity, adverse field and superelevation
Storage density, its excellent performance is widely used in high density magnetic storage medium, magnetic random memory, self-spining device, magnetic transducing
Device and magnetic switch device etc..The patent document for also having correlation at present is reported, public in such as patent US6999279B2
The magnetic Nano pattern medium with perpendicular magnetic anisotropy opened, the utilization Ad hoc mode disclosed in patent US9257636B2
The perpendicular magnetic anisotropy magnetic random memory of preparation.
For the thin magnetic film with perpendicular magnetic anisotropy, perpendicular magnetic anisotropy nano dot magnetic texure has
Higher coercivity and bigger reversion field distribution.For heat endurance, high-coercive force can cause magnetic Nano knot
Structure overcomes superparamagnetic e ffect, but too high coercivity is but unfavorable for writing data, therefore, for magnetic recording, it is necessary to it is high and
Controllable coercivity.At the same time, reversion field distribution is smaller, is one byte of accurate write-in and release write-in synchronous window
Key.Therefore, for designing the nanometer dot pattern medium with perpendicular magnetic anisotropy, controllable high-coercive force is being obtained
Simultaneously, it is necessary to reduce reversion field distribution as far as possible.
Coercivity and reversion field distribution and magnetic material, nanostructured pattern, size, thickness, growth defect, edge
Magnetic interaction etc. has very big relation between roughness and pattern.For material, Co/Pd, Co/Ni and Co/Pt are more
Tunic etc. has the medium that the material of modulated vertical anisotropic is the preferably nanostructured with perpendicular magnetic anisotropy
Material.It is reported that Co/Pd nanometers of dot patterns from 500 nanometers increase to 600 nanometers with diameter, its coercivity is about from 3800
Oersted is reduced to 3700 oersteds, and reversion field distribution is reduced to 230 oersteds from about 240 oersteds, and its rate of change is respectively less than
5%.And with the raising of packing density, the spacing of magnetic Nano point can be greatly reduced, so that mutual between magnetic Nano point
Effect can be greatly enhanced, so as to have impact on coercivity and the reversion field distribution of magnetic Nano point.It is reported that for Co/Pd multilayers
Film nano-rings pattern, when nano dot while with while spacing from 150 nanometers increase to 1300 nanometers, its coercivity from 750 it is difficult to understand this
Spy increases to 1800 oersteds, and it inverts field distribution increases to 600 oersteds from 280 oersteds, and its rate of change is all higher than
200%.With the increase of packing density, magnetic interaction becomes most important to coercivity and adverse field distribution influence.For
The need for meeting increasingly increased magnetic recording density, it is desirable to the densely arranged nanostructured pattern of design to obtain it is big can
The coercivity of control and small reversion field distribution, but the research of this respect and few.
The content of the invention
The primary and foremost purpose of the present invention is just to provide a kind of perpendicular magnetic anisotropic magnetic Nano lattice array device.
A kind of magnetic Nano lattice array device, it is characterised in that：Substrate including insulating materials and it is attached on substrate
Unit, unit is rectangular dots array, and rectangular dots array is made up of the multi-layered magnetic material with perpendicular magnetic anisotropy, rectangle
It is that spacing between w, rectangle is s for equilateral rectangle and its length of side, the thickness of rectangle is d, wherein：W ∈ (100nm, 1um), d
∈ (5nm, 50nm), s ∈ (50nm, 1950nm), s:D ∈ (10,5), each sharp corner of each rectangle carries out fillet processing.
Spacing between the nano dot of above-mentioned device changes (its excursion is from 100 nanometers to 1950 nanometers) not shadow
Coercivity and reversion field distribution are rung, and works as nano-dot size excursion and is less than in 100 nanometers, the maximum change of its coercivity
Rate is about 60% and reversion field distribution maximum rate of change is about 12%.
Specifically scheme is：s∈(50nm,w)、s:D ∈ (10,5), each corner of each rectangle carry out fillet processing.
Present invention also offers a kind of preparation method of magnetic Nano lattice array device, it is included on backing material and is formed
Required masterplate, then carries out the magnetic material with perpendicular magnetic anisotropy to form rectangular dots array on masterplate.
Further scheme is：
Using one in DUV lithography, electron beam lithography, extreme ultraviolet technology, nanometer embossing
Plant and required template is formed on backing material；Using magnetron sputtering technique, electron beam evaporation technique, molecular beam epitaxy technique,
One kind in pulsed laser deposition technique carries out deposition on masterplate and forms rectangular dots array.
Substrate is any one in silicon chip, glass substrate, quartz substrate, GaAs substrate.
The sputter material of magnetron sputtering is (Co (0.5)/Pd (3))8、Co/Ni、Co/Pt、FeCo/Pt、 Co/Pd、Co/
One of Au, Co/Pt/NiFe, Co/Pd/NiFe, FePt, be preferably (Co (0.5)/Pd (3))8
Specifically scheme is：Backing material is silicon chip, and silicon chip is positioned on sol evenning machine, is dripped with photoresist after full silicon chip
Spin coating, obtains uniform glue-line, then will be dried after the silicon chip progress for scribbling glue-line, is exposed with 248 nanometers of deep UV lithography machine
And developed and be fixed, the rectangle nano-dot matrix array structure of shape needed for obtaining, then with the method for magnetron sputtering in rectangle nanometer
The evaporation with perpendicular magnetic anisotropy magnetic material is carried out in dot matrix array structure, photoresist is then removed, the magnetic of shape needed for obtaining
Property nano-dot matrix array structure.
Present invention also offers the application of the magnetic Nano lattice array device, magnetic Nano lattice array device is specifically referred to
Application in magnetic read-write device, magnetic Nano switching device, Magnetic Sensor.
The present invention discloses magnetic phase interaction based on the magnetic Nano dot matrix array structure for selecting certain thickness, nano-dot size
With with nano-dot size to the adverse field of the magnetic Nano point device with perpendicular magnetic anisotropy and the influence of reversion field distribution,
Experiment is provided for development magnetic Nano device and theoretical and practice provides foundation.
Brief description of the drawings
Fig. 1 is the ESEM of the nanometer lattice row device of the wherein several typical different sizes and spacing of the present invention
Photo, wherein：Device I-IV is rectangle nano-dot matrix, and side carries the fillet of rounding.Device I：Rectangular dots width w
For 490 nanometers, the distance s of rectangle between points are 100 nanometers；Device II：W is 490 nanometers, and s is 1950 nanometers；Device
Ⅲ：W is 580 nanometers, and s is 100 nanometers；Device IV：W is 580 nanometers, and s is 1950 nanometers；
Fig. 2 a are Pd (15)/(Co (0.5)/Pd (3))8The hysteresis curve figure of/Au (5) (nanometer) thin magnetic film；Fig. 2 b are
The wherein four kinds s of the present invention are 100 nanometers of multilayer Pd (15)/(Co (0.5)/Pd (3))8/ Au (5) (nanometer) typical case receives
The hysteresis curve figure of rice point device, device I：W=490nm；Device A：W=530nm；Device B：W=550nm；Device III：W=
580nm；Fig. 2 c are variation diagram of the coercivity H with rectangle width；
Fig. 3 a are multilayer Pd (15)/(Co (0.5)/Pd (3)) of the invention8/ Au (5) (nanometer) four kinds of typical nanodots
The hysteresis curve figure of device；The rectangle width w of magnetic device be 490~580 nanometers, Fig. 3 b be coercivity rectangle width w and
The graph of a relation of nano dot side distance s change；Fig. 3 c are normalized reversion field distribution with rectangle width w and nano dot side distance s
The graph of a relation of change；
Fig. 4 is respectively the domain state figure of III and IV device of the present invention；
Fig. 5,6 schematic diagram for device of the invention for the writing station of magnetic recording media.
Embodiment
In order that objects and advantages of the present invention are more clearly understood, the present invention is carried out with reference to embodiments specific
Explanation.It should be appreciated that following word is only to describe one or more of specific embodiments of the invention, not to this
The protection domain that invention is specifically asked carries out considered critical.
The present invention is explained in detail with reference to embodiments.
First, device prepares embodiment
Silicon chip is cut into 25.4 × 25.4mm2Size (silicon chip major parameter：P-type, resistivity：<0.0015>, crystal orientation：
<100>, thickness：500um), silicon chip is cleaned, is put into baking box, toasts 30 minutes, after taking-up, is positioned over even at 150 DEG C
On glue machine, appropriate deep ultraviolet light-sensitive lacquer is extracted with suction pipe, the full silicon chip (XAR-P5800/7) of drop, with 4000 turns of speed, is got rid of
Glue 1 minute, removes silicon chip, is put into baking box, and 85 DEG C of bakings are taken out after 45 seconds.It is 248 that silicon chip after spin coating is put into wavelength
Nanometer without mask far ultraviolet exposure machine, exposure dose 20mJ/cm2, by the designed positive adhesive process of coupled nanosecond ring pattern
It is exposed on silicon chip.After silicon chip extracting, developer solution is put into, develops 45 seconds, places into fixing solution 1 minute, it is clear in deionized water
After washing, silicon chip surface is dried up with nitrogen, and uses microscope, by multiplication factor regulation to 100 times of observation nanometer lattice row patterns.
Silicon chip with nano-dot matrix pattern is put into magnetic control sputtering device, it is 3mTorr by force to set Ar air pressure, high vacuum is 5 × 10- 8Torr, sputters Pd (15)/(Co (0.5)/Pd (3)) respectively8/ Au (5) (nanometer) multilayer film is on silicon chip, last covered 5nm
Au be used as protective layer.Silicon chip is taken out from magnetic control sputtering device, soaks half an hour, is then placed on several in ultrasound in OK73 solution
Second observation is completely fallen off to photoresist, is washed with deionized water net, and is dried up with nitrogen, it is possible to obtain corresponding device.
The present invention prepares the device that embodiment prepares diversified forms, wherein the scanning electron microscope (SEM) photograph of representational typical structure is referring to attached
Fig. 1：Device I is rectangle nanometer lattice row, and rectangle width w is 490 nanometers, and the distance s of rectangle between points are 100 nanometers
Device, side carry rounding fillet；II is rectangle nanometer lattice row, and w is 490 nanometers, and s is 1950 nanometers of device
Part, side carries the fillet of rounding；III is rectangle nanometer lattice row, and w is 580 nanometers, and s is 100 nanometers of device, side
Carry the fillet of rounding；IV is rectangle nanometer lattice row, and w is 580 nanometers, and s is 1950 nanometers of device, and side is carried
The fillet of rounding.
Using pole to it is micro- focusing Kerr magnetooptical effect instrument to the present invention wherein several typical nanodots array devices and
Its corresponding membrane structure is detected, can obtain the corresponding hysteresis curve of each device, its result is referring to accompanying drawing 2.Its is corresponding
The coercivity H of film is about 520Oe, and its normalized reversion field distribution (reversion field distribution SFD/Hc) is 0.58.And it is identical
The coercivity of four nano dot devices of material and normalized reversion field distribution have obvious change.The wide w of rectangular dots
580 nanometers are changed to from 490 nanometers, its coercivity H becomes from 1527Oe turns to 2427 Oe.Nano dot device coercivity maximum
It is 4.7 times of film.Its nano dot width maximum rate of change is 18.3%, and its coercivity maximum rate of change is 58.9%, it is seen that
Its coercivity can be adjusted in very wide range by the size for changing this nano dot device.Simultaneously, it can be seen that
As w changes to 580 nanometers from 490 nanometers, the normalized reversion field distribution of nano dot device is reduced to from 0.294
0.204.According to report, although the nano dot magnetic texure with perpendicular magnetic anisotropy can obtain bigger coercivity, but
Increase reversion field distribution simultaneously.And the rectangle nano dot device with perpendicular magnetic anisotropy that we design is obtaining big
It is coercitive to also reduce reversion field distribution simultaneously, improve the Stability and veracity of magnetic recording write-in.
The hysteresis curve figure of four kinds of nanometer lattice row device architectures in scanning electron microscope (SEM) photograph is given in accompanying drawing 3a.Device I
Hysteresis curve with II is almost completely superposed, while it can be seen that, the hysteresis curve of device III and IV is also almost completely superposed.
For device I and II (device III and IV), its nano dot distance s changes to 1950 nanometers from 100.We provide in fig 3b
The coercivity of various nano dot devices of the invention prepared is with s change curve.It can be found that for fixed w, s
1950 nanometers are changed to from 100, coercivity is almost unchanged.At the same time, it can be seen that in figure 3 c, for fixed w, s from
100 change to 1950 nanometers, and normalized reversion field distribution is also almost unchanged.Its remanent magnetism shape is measured respectively to device III and IV
Domain structure under state, can see from the magnetic domain variation diagram of accompanying drawing 4, the magnetic domain of device III it is general the top of nano dot into
Core, then domain wall is pushed ahead, so as to realize magnetization inversion.The stray magnetic field of adjacent nano dot in device III is not to it
Nucleation process is produced a very large impact, and device IV is separates far nanometer lattice row device, and its nucleation process is phase with device III
As.From magnetic domain variation diagram, it can be seen that influence of the magnetostatic coupling to adjacent nano point in nucleation process is very micro-
It is weak.Show according to the study, for magnetic Nano point, with the increase of packing density, the magnetostatic phase interaction between magnetic Nano point
With that can influence strongly, so as to increase reversion field distribution.And this magnetic Nano point device of the present invention is realized with nanometer
The increase magnetostatic coupling of dot density has no effect on coercivity and reversion field distribution.It is quiet for increasingly increased packing density
The processing of magnetic interaction is very stubborn problem, and magnetic Nano lattice array device of the invention solves this problem.
Application example：
Fig. 5, Fig. 6 are respectively that application device I is write-in schematic diagram of the example as exemplary magnetic recording media unit.Fig. 5
It is the cross-sectional structure schematic diagram that the magnetic recording media constituted with device I is written and read record with read/write head.This magnetic recording media
1 is multilayer Pd (15)/(Co (0.5)/Pd (3))8/ Au (5) (nanometer) rectangle nano dots device I, magnetic recording media 2 can be with
Using the high coercive permanent-magnetic material with perpendicular magnetic anisotropy, this application example uses L10The Fe of phase0.53Pt0.47(50) (nanometer)
Alloy firm.In instances, writing head for the first time by magnetic recording media as shown in Figure 5 when, plus very big field (this
Write-in field be 1.2 teslas), at this time, recording medium 1 and recording medium 2 are all saturated magnetization, its direction of magnetization perpendicular to
Film surface is outside, next when writing head passes through magnetic recording media for the second time, plus a less reverse write-in field, this write-in
Size be about 2000 oersteds, because the upset of recording medium 2 is 1.1 teslas, therefore only recording medium 1
The nano dot recording unit direction of magnetization changes, i.e., the direction of magnetization is inside perpendicular to film surface.Method more than, so that it may
To carry out magnetic recording ablation process, compiled code 1 is outwards recorded as perpendicular to film surface for the direction of magnetization, the direction of magnetization is vertical
Compiled code 0 is inwardly recorded as in film surface.Due to the present invention magnetic Nano lattice array device as recording medium 1 have compared with
High and regulatable adverse field and less reversion field distribution, can cause magnetic recording have higher heat endurance and
A byte and release write-in synchronous window can accurately be write.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, after content described in the present invention is known, under the premise without departing from the principles of the invention, if can also be made to it
Dry equal conversion and replacement, these, which convert and substituted on an equal basis, also should be regarded as belonging to protection scope of the present invention.
Claims (10)
1. a kind of magnetic Nano lattice array device, it is characterised in that：Substrate including insulating materials and it is attached on substrate
Unit, unit is rectangular dots array, and rectangular dots array is made up of the multi-layered magnetic material with perpendicular magnetic anisotropy, and rectangle is etc.
Side rectangle and its length of side are that the spacing between w, rectangle is s, and the thickness of rectangle is d, wherein：W ∈ (100nm, 1um), d ∈
(5nm, 50nm), s ∈ (50nm, 1950nm), s:D ∈ (10,5), each sharp corner of each rectangle carries out fillet processing.
2. magnetic Nano lattice array device according to claim 1, it is characterised in that：s∈(50nm,w).
3. magnetic Nano lattice array device according to claim 1, it is characterised in that：s:d∈(10,5).
4. magnetic Nano lattice array device according to claim 1, it is characterised in that：Justified in each corner of each rectangle
Angle is handled.
5. a kind of preparation method of magnetic Nano lattice array device, it is characterised in that be included in needed for being formed on backing material
Masterplate, then carries out the magnetic material with perpendicular magnetic anisotropy to form rectangular dots array on masterplate.
6. the preparation method of magnetic Nano lattice array device according to claim 5, it is characterised in that use DUV
Needed for one kind in lithography, electron beam lithography, extreme ultraviolet technology, nanometer embossing is formed on backing material
Template；Using one in magnetron sputtering technique, electron beam evaporation technique, molecular beam epitaxy technique, pulsed laser deposition technique
Plant and rectangular dots array is formed on masterplate.
7. the preparation method of magnetic Nano lattice array device according to claim 5, it is characterised in that substrate be silicon chip,
Any one in glass substrate, quartz substrate, GaAs substrate.
8. the preparation method of the magnetic Nano lattice array device according to claim 6 or 7, it is characterised in that backing material
For silicon chip, silicon chip is positioned on sol evenning machine, spin coating after full silicon chip is dripped with photoresist, uniform glue-line is obtained, then glue-line will be scribbled
Silicon chip carry out after dry, be exposed with 248 nanometers of deep UV lithography machine and developed and be fixed, obtain needed for shape square
Shape nano-dot matrix array structure, then carried out with the method for magnetron sputtering in rectangle nano-dot matrix array structure with perpendicular magnetic anisotropy
The evaporation of magnetic material, then removes photoresist, the magnetic Nano dot matrix array structure of shape needed for obtaining.
9. the preparation method of the magnetic Nano lattice array device according to claim 6 or 7, it is characterised in that magnetron sputtering
Sputter material be (Co (0.5)/Pd (3))8、Co/Ni、Co/Pt、FeCo/Pt、Co/Pd、Co/Au、Co/Pt/NiFe、Co/
One of Pd/NiFe, FePt.
10. a kind of application of magnetic Nano lattice array device, it is characterised in that：Refer to that magnetic Nano lattice array device is read and write in magnetic
Application in device, magnetic Nano switching device, Magnetic Sensor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109363769A (en) * | 2018-11-13 | 2019-02-22 | 李成利 | A kind of magnetic resonance positioning device and localization method |
| CN110581214A (en) * | 2019-09-17 | 2019-12-17 | 云南大学 | Composite multilayer magnetic nanoring array memory device and preparation method and application thereof |
| CN115219420A (en) * | 2022-06-09 | 2022-10-21 | 云南大学 | Novel femtosecond time domain micro-nano space resolution multifunctional magnetooptic instrument |
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| CN1817786A (en) * | 2006-01-18 | 2006-08-16 | 南京大学 | Two-dimensional fractional standing point array with ordered Fe/SiO2 composite nanometer particle and production thereof |
| WO2006099482A2 (en) * | 2005-03-14 | 2006-09-21 | The Johns Hopkins University | Ferromagnetic nanorings, mediums embodying same including devices and methods related thereto |
| CN102383102A (en) * | 2011-09-29 | 2012-03-21 | 中国航空工业集团公司北京航空材料研究院 | Magnetic nano anti-dot array film and preparation method thereof |
| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
| CN105845823A (en) * | 2016-04-04 | 2016-08-10 | 兰州大学 | Magnetic device and preparation method |
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| WO2006099482A2 (en) * | 2005-03-14 | 2006-09-21 | The Johns Hopkins University | Ferromagnetic nanorings, mediums embodying same including devices and methods related thereto |
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| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
| CN102383102A (en) * | 2011-09-29 | 2012-03-21 | 中国航空工业集团公司北京航空材料研究院 | Magnetic nano anti-dot array film and preparation method thereof |
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| CN109363769B (en) * | 2018-11-13 | 2024-02-23 | 李成利 | Magnetic resonance positioning device and positioning method |
| CN110581214A (en) * | 2019-09-17 | 2019-12-17 | 云南大学 | Composite multilayer magnetic nanoring array memory device and preparation method and application thereof |
| CN115219420A (en) * | 2022-06-09 | 2022-10-21 | 云南大学 | Novel femtosecond time domain micro-nano space resolution multifunctional magnetooptic instrument |
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