CN102428557B - 其中通过使用连接到参考电势的额外接合线对接合线进行阻抗控制的微电子组件 - Google Patents
其中通过使用连接到参考电势的额外接合线对接合线进行阻抗控制的微电子组件 Download PDFInfo
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- CN102428557B CN102428557B CN201080020828.3A CN201080020828A CN102428557B CN 102428557 B CN102428557 B CN 102428557B CN 201080020828 A CN201080020828 A CN 201080020828A CN 102428557 B CN102428557 B CN 102428557B
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 79
- 239000004020 conductor Substances 0.000 claims abstract description 77
- 230000011664 signaling Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
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- 239000004952 Polyamide Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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Abstract
一种微电子组件可以包括例如半导体芯片(910)的微电子装置,其与互连元件(930),例如基板连接在一起,所述互连元件(930)具有信号触点(990)和参考触点(980)。所述参考触点可连接到参考电势源,例如地或不同于地的电压源,例如用于电源的电压源。例如信号接合线(965)的信号导体可连接到在微电子装置(910)的表面处露出的装置触点(912)。可提供参考导体,例如参考接合线(975),其中至少一个可与所述互连元件(930)的两个参考触点(980)连接。参考连接线(975)可在信号导体的长度的至少大部分上、与连接到微电子装置的例如信号接合线(965)的信号导体以至少大体上均匀的距离延伸的布线。以这种方式,对信号导体可以实现所需的阻抗。
Description
交叉引用申请
本申请要求2009年9月22日提交的韩国申请No.10-2009-0089471的优先权并且要求2009年3月13日提交的美国临时专利申请No.61/210,063的权益,其公开此处以引用的方式并入。
背景技术
微电子芯片通常为具有相对面对的、大体为平面的前表面和后表面的扁平体,所述前表面和后表面具有在这些表面之间延伸的边缘。芯片通常在前表面上具有触点,有时也称为焊盘或接合焊盘,在所述触点的前表面上电连接到该芯片之内的电路。通过将所述芯片使用合适的材料密封来典型地封装所述芯片,以形成具有电连接到芯片触点、具有端子的微电子封装。然后,该封装可连接到测试设备,以确定被封装的器件是否符合所需的性能标准。一旦测试时,该封装可通过将封装端子经过例如焊接的合适的连接方法连接到印刷电路板(PCB)上的匹配连接盘(land)而连接到更大的电路(例如电子产品中的电路,所述电子产品例如为计算机或移动电话)。
微电子封装可以晶圆级制造;即,在芯片或管芯仍处于晶圆形式时、制造构成封装的壳体、端点和其他特征。在已经形成管芯之后,使晶圆经受多个附加工艺步骤以在该晶圆上形成封装结构,然后将该晶圆切割以分开单独封装的管芯。晶圆级加工可能是有效的制造方法,因为每个管芯封装的器件封装可制成与管芯自身的尺寸相同或几乎相同,由此获得被封装管芯所连接的印刷电路板上的面积的非常有效的利用。
在微电子芯片和一个或多个其他电子部件之间形成导电连接的常用技术是通过线键合(wire bonding)。传统地,线键合工具将线的一端使用热和/或超声能量连接到微电子芯片的焊盘上,然后将该线回线到另一电子部件上的触点,并且使用热和/或超声力形成到其的第二接合点(bond)。
发明内容
本发明人已经意识到,使用线键合技术的问题之一是,沿线的电磁传输可能延伸到围绕该线的空间中,在附近的导体中感应电流,并且造成不期望的辐射和线的失谐。线键合通常还受到自感和外部噪声(例如来自附近的电子部件)的影响。最终,这产生电阻抗问题。这些问题可能由于微电子芯片和其他电子部件上的接点之间的节距变得更小、由于芯片在更高的频率下操作以及由于大量焊盘的使用变得更平常而变得更严重。
本文描述了用于微电子组件的多种结构和制造技术。根据一个实施例的微电子组件包括线键合到一个或多个微电子子组件的微电子装置。
相应地,提供一种微电子子组件,包括微电子装置,例如半导体芯片或具有连接到其的附加结构的半导体芯片,所述微电子装置与例如诸如基板、载体等的互连元件的微电子子组件导电连接。微电子组件可包括参考导体或参考导电元件,例如接合线(wirebond)。例如接合线的参考导体之一可与微电子子组件上的两个参考触点连接。参考触点可连接到参考电势源,例如地或不同于地的电压源,例如用于电源的电压源。可选地,参考触点可以连接到关联于对这样的信号感兴趣的频率而表现得稳定的电势源:所述信号可输入或输出到至少特定信号导体上的微电子装置,所述至少特定信号导体连接到所述微电子装置。参考接合线可具有对连接到微电子装置的例如信号接合线的信号导体的布线(run)、在所述信号导体长度的至少大部分上以基本上均匀的间距延伸的布线。参考导体可与信号导体适当间隔开,以对信号导体获得所需的阻抗。
根据本文的一个实施例,提供一种微电子组件,所述微电子组件包括微电子装置,所述微电子装置具有在所述微电子装置的表面处露出的装置触点。互连元件可具有多个信号触点和多个参考触点,参考触点可连接到参考电势源,以连接到参考电势。信号导体可将特定装置触点与信号触点连接。信号导体大部分可以在微电子装置上方的布线中延伸。多个参考导体可连接到参考触点。参考导体可以具有距离信号导体的布线至少基本上均匀的间距分开的布线中延伸的大部分。参考导体中的至少一个可连接到互连元件的两个参考触点。根据该实施例,对信号导体可获得所需的阻抗。
根据本文的一个实施例,参考导体可至少基本上平行于信号导体的布线的相当的部分延伸。在特定的实施例中,参考导体可设置在信号导体上方、信号导体下方或可设置在信号导体的上方和下方。
根据特定的实施例,信号导体中的至少一些的布线可在第一平面中延伸。 一个或多个参考导体可具有在基本上平行于第一平面的第二平面中延伸的相当的部分。
根据特定的实施例,参考导体的相当的部分可至少基本上平行于信号导体的布线延伸。参考导体的这样的部分可在信号导体的布线长度的至少约50%上这样延伸。
根据特定的实施例,信号导体可包括信号接合线,参考导体可包括参考接合线。在特定的实施例中,信号导体可以是信号接合线,参考导体可以是参考接合线。在这样的情况下,参考接合线中的至少一个可接合到互连元件的两个参考触点。
根据特定的实施例,参考接合线可包括设置距离微电子装置比信号接合线处于更大高度处的第一参考接合线。还提供第二参考接合线,该第二参考接合线设置在距离微电子装置比信号接合线更低的高度处。参考接合线还可包括第三参考接合线,所述第三参考接合线介于信号接合线的单独的信号接合线之间。
根据特定的实施例,参考接合线具有第一端和远离所述第一端的第二端。至少一个参考接合线可具有连接到参考触点的第一端和连接到装置触点的第二端。
根据特定的实施例,微电子装置的装置触点从其露出的表面可以是前表面,微电子装置可具有远离所述前表面的后表面,且边缘可以在前表面和后表面之间延伸。后表面可安装到互连元件,并且在这种情况下,信号接合线和参考接合线可延伸超出微电子装置的边缘。
根据特定的实施例,参考接合线可具有关于微电子装置的表面成角度倾斜的布线。
根据特定的实施例,信号导体的多个布线可包括接合线的至少部分。
根据特定的实施例,一个或多个信号接合线可采用台阶式作为多个连接的台阶延伸。参考接合线中的至少一个可采用台阶式以与这样的信号接合线的至少一些台阶以至少基本上均匀的间距延伸。
附图说明
图1A是示出根据本发明一个实施例的微电子组件的剖视图。
图1B是示出沿横向于图1A中示出的截面的剖切线的剖视图,且进一步示出根据本发明一个实施例的微电子组件。
图1C是进一步示出根据本发明一个实施例的微电子组件的平面视图。
图1D是示出信号导体和地之间的分开距离H与特征阻抗关系的曲线。
图2A是示出根据本发明一个实施例的微电子组件的剖视图。
图2B是示出沿横向于图2A中示出的截面的剖切线的剖视图,进一步示出根据本发明一个实施例的微电子组件。
图3是示出根据本发明一个实施例的微电子组件的剖视图。
图4是示出根据本发明一个实施例的微电子组件的剖视图。
图5是示出根据本发明一个实施例的微电子组件的剖视图。
图6是示出根据本发明一个实施例的微电子组件的剖视图。
图7是示出根据本发明一个实施例的微电子组件的剖视图。
具体实施方式
图1A是根据一个实施例的微电子组件900的正视图。图1B是穿过横向于图1A中示出截面的方向的剖切线的微电子组件900的相应剖视图,图1C是从微电子组件930上方看的自顶而下的平面视图。
在该示例中,微电子组件900包括微电子装置910,所述微电子装置910具有例如通过接合线连接到微电子组件930的导电互连,例如具有互连功能的元件,此处也称为互连元件。接合线可使用传统的线键合技术形成。为了说明的目的,微电子装置910可以是单个“裸芯片(bare)”,即未封装管芯,例如其上具有微电子电路的半导体芯片。在可选的实施例中,微电子装置910可包括封装的半导体管芯。
为了易于参考,在本公开中阐述了方向参考“顶部”,即半导体芯片910的触点承载面928。通常,称为“向上”或“从…升高”的方向应指正交和远离芯片顶面928的方向。称为“向下”的方向应指正交于芯片顶面128并且与向上方向相反的方向。术语在参考点“上方”应指参考点向上的点,术语在参考点“下方”应指参考点以下的点。任何单独的元件的“顶部”应指元件的沿向上方向延伸最远的一个或多个点,术语任何元件的“底部”应指元件的沿向下方向延伸最远的一个或多个点。
如图1A中所示的微电子子组件930具有互连功能。例如,微电子子组件可以是封装元件,所述封装元件具有多个导电引线或迹线935;多个信号触点990,所述多个信号触点990连接到所述引线或迹线,通常安置在第一位置处, 用于与所述微电子装置互连;多个端子920,所述端子920通常布置在第二位置处,例如用于互连到另一个元件,如用于外部互连到印刷电路板;和多个参考触点980,所述参考触点980可与电源或地连接(例如通过端子920)。在图1A-C中示出的示例中,触点990可传送信号,即随时间变化并且通常传递信息的电压或电流。例如,但不限制地,信号的示例为随时间变化并且代表状态、变化、测量值、时钟或时间输入或控制或反馈输入的电压或电流。另一方面,参考触点990可提供到地或电源电压的连接。到地或电源电压的连接在电路中通常关于电压提供参考,所述电压至少在对电路运行重要的频率范围随时间相当稳定。
如本公开中所用,导电结构露出在介电结构表面处的陈述表示导电结构可用于与沿垂直于该介电结构表面方向从介电结构外部朝向介电结构表面移动的假设点接触。这样,露出在介电结构表面处的端子或其他导电结构可从这样的表面突出;可与这样的表面平齐;或可相对于这样的表面凹入,并且通过电介质中的孔或凹入部露出。
在一个特定的实施例中,微电子子组件可包括“基板”,例如,承载多个迹线和接合焊盘的介电元件。无限制地,基板的一个具体的示例可以是片状可变性介电元件,典型地由聚合物制成,例如聚酰胺等,其上具有图案化的金属迹线和接合焊盘,接合焊盘在介电元件的至少一个面处露出。
在形成微电子装置和微电子子组件之间的导电互连之前,焊盘980、990在微电子子组件130的朝向外的面932处露出。如图1A-C中特别地示出,传输线可由信号接合线965形成,信号接合线965以与参考接合线975在至少信号接合线的大部分长度上平行或基本上平行的布线并置。信号接合线导电连接在微电子装置910的表面处(通常为前表面)处的装置触点912和在微电子子组件930的表面处露出的元件接点975。在一个实施例中,信号接合线和参考接合线的布线在超过信号接合线长度的50%上可以是平行或基本上平行的。
参考接合线在两端处连接到微电子子组件930上的地触点980,或在两端处连接到微电子子组件930上的电源触点。如图所示,参考接合线975覆盖在信号接合线上方,并且通过介电材料,例如可通过在接合线965、975上分配一团介电材料、之后使材料固化形成的密封材料(encapsulant)而与该信号接合线绝缘。接合线可以相对精确的放置和在期望公差范围内形成,从而实现平行的近距离分开的布线。例如,可使用来自Kulicke和Soffa的线键合设备获 得精确接合线。
为了在这样形成的传输线中实现所选的特性阻抗,可选择参数,例如用于接合线965、975中的金属的导电性能,以及其中的线的形状和厚度、接合线之间的绝缘材料950的厚度和绝缘材料950的介电常数。在特定的实施例中,参考接合线的布线与信号接合线的布线相距一定间隔距离布置。在一个实施例中,这样的距离可选择成约50微米(百万分之一米)。在另一个实施例中,这样的距离可选择得更大,例如75微米、100微米或更大。
图1D用图表曲线标示了以欧姆为单位的特性阻抗Z0和以英寸为单位的信号导体(例如圆柱形横截面的电线)和参考导体(例如地平面)之间的分开距离之间的关系。参考导体假设为平面结构,所述平面结构与信号导体的直径相比很大。图1D绘出两根不同直径的电线的特性阻抗。图1D中的曲线可从决定现有几何形状的布置中的特性阻抗的公式获得。在这样的公式中,特性阻抗Z0由以下方程给出:
其中H为电线和导电平面之间的分开距离,d为电线的直径,εR为将电线与导电平面分开的介电材料的磁导率。在图1B中,下部曲线140绘出电线厚度为1密耳,即0.001英寸时的特性阻抗。上部曲线142绘出了当电线厚度为0.7密耳、即0.0007英寸时的特性阻抗。如图1D中所示,当电线和导电平面之间的分开距离H小于或等于约0.002英寸(2密耳)时,提供低于约70欧姆的特性阻抗。
图2A和2B是根据另一个实施例的微电子组件的正视图和相应的剖视图。这里,如特别地所示,信号接合线1065可覆盖在参考接合线(例如地接合线1075)上。
如图3中提供的正视图中具体所示,传输线的信号接合线1165和参考接合线1175中的每一个可在微电子装置1110的触点和微电子子组件1130的触点之间延伸。
如图4的剖视图中所示,可使用任何形式的信号接合线布置方式来形成传输线。例如,参考接合线可设置在信号接合线上方、下方或之间,或与信号接合线侧向相邻。而且,多个参考线可用作、用于特定信号接合线的参考导体。
图5是示出微电子子组件1300的正视图。这里,传输线的参考导体由具 有导电连接到微电子子组件上的成对的地触点或成对的电源触点的端部的参考接合线1375提供。参考接合线1375可用作用于一个或多个信号接合线1365的参考导体。如图5中所示,存在两个这样的信号接合线,所述信号接合线靠近参考接合线1375延伸。
在特定的实施例中,多个类似于图5中所示的那些的微电子子组件可一个叠置在另一个顶上,并且可导电地并且机械地连接在一起,以形成可操作单元。形成这样的单元的方法可以形成包括通过信号导电元件和参考导电元件连接到其的微电子装置的微电子组件开始。为了形成这样的组件,可形成信号导电元件(例如接合线)1365,所述信号导电元件1365将微电子装置1310与相应的微电子子组件1330,例如位于微电子装置后表面1302下方的基板、载体或带连接在一起。可形成参考导电元件(例如接合线)1375,所述参考导电元件1375连接互连元件1330上的各接点1380。然后,介电层(例如密封材料层)1350可以形成为、密封信号导电元件和参考导电元件的覆盖在微电子装置的前表面1304上的那些部分,保留微电子子组件上的至少一些的参考触点和信号触点露出在微电子装置1310的边缘1306之外。可将以这样的方式制造的多个微电子子组件一个叠置在另一个顶部上,然后可形成将每个微电子子组件上的参考触点和信号触点中的至少一些连接在一起的导体。
图6示出上述实施例(图1A-C)的变体,其中,信号线665以沿微电子装置610的表面628的布线延伸,其中,布线667不平行于表面628的平面。相反,接合线的布线667相对于表面628成角度倾斜。在该情况下,参考接合线675可以间距661平行于布线667延伸,间距661沿信号接合线的长度的50%或更多均匀或至少基本上均匀。以该方式,获得具有有益的特性阻抗的传输线结构。该制造方法可以与关于上面图1A-B所述的方法相同,不同之处在于,线键合设备例如以不同编程方式构造,以制备具有图6中所示的形状的接合线。
图7示出另一个变体,其中,接合线765不以均匀的线性布线延伸。相反,接合线具有台阶形状,所述接合线包括:第一凸出部782,所述第一凸出部782可以相对较短,并且大部分相对于表面728沿垂直方向延伸;和第二凸出部784,所述第二凸出部784比第一突出部782较长一些,并且可以沿横跨微电子装置710的表面728的方向延伸。参考接合线775也可布置成具有台阶状的布线770,以顺应信号接合线的轮廓。结果,参考接合线775可以间距781平 行于接合线的凸出部784延伸,间距781均匀或至少沿接合线长度的50%或更多均匀。再次地,可使用上面与关于图1A-B描述的相同的制造方法来形成图7中所示的组件,不同之处在于,线键合设备例如以不同的编程方式构造,以制备具有如图7中所示的形状的接合线。
已经关于单独的微电子装置(例如半导体芯片)的互连描述了前面的实施例。但是,应可理解,本文所述的方法可用于晶圆级制造方法中,所述晶圆级制造方法同时应用到在芯片边缘处连接在一起的多个芯片,例如以单元、面板、晶圆或晶圆的一部分的形式在边缘处连接在一起的多个芯片。
虽然上面的描述参考了用于特定应用的示例性实施例中,但是应可理解,要求保护的本发明不限于此。本领域的和获知本文提供技术的普通技术人员将意识到在所附权利要求范围内的另外的修改形式、应用和实施例。
Claims (13)
1.一种微电子组件,包括:
微电子装置,所述微电子装置具有在所述微电子装置的表面处露出的装置触点;
互连元件,所述互连元件具有多个信号触点和多个参考触点,所述参考触点适于连接到参考电势源;
信号导体,所述信号导体将所述装置触点与所述信号触点连接,所述信号导体的一部分以在所述微电子装置表面上方的布线延伸;以及
参考导体,所述参考导体连接到所述参考触点,并且部分以距离所述信号导体的布线均匀的间距分开的布线延伸,所述参考导体中的至少一个连接到所述互连元件的两个参考触点,从而对所述信号导体获得所需的阻抗。
2.一种微电子组件,包括:
微电子装置,所述微电子装置具有在所述微电子装置的表面上的装置触点;
互连元件,所述互连元件具有多个信号触点和多个参考触点,所述参考触点适于连接到参考电势源;
信号导体,所述信号导体将所述装置触点与所述信号触点连接,所述信号导体的一部分以在所述微电子装置的表面上方的布线延伸;以及
参考导体,所述参考导体连接到所述参考触点,并且平行于所述信号导体的布线的一部分延伸,所述参考导体中的至少一个被设置在所述信号导体的上方或所述信号导体的下方,所述参考导体中的至少一个连接到所述互连元件的两个参考触点,从而对所述信号导体获得所需的阻抗。
3.根据权利要求1或2所述的微电子组件,其中,所述信号导体中的至少一些的布线在第一平面中延伸,并且所述参考导体中的至少一些的一部分在平行于所述第一平面的第二平面中延伸。
4.根据权利要求1或2所述的微电子组件,其中,所述参考导体的一部分在所述信号导体的布线长度的至少50%上且平行于所述信号导体布线延伸。
5.根据权利要求1或2所述的微电子组件,其中,所述信号导体包括信号接合线,并且所述参考导体包括参考接合线。
6.根据权利要求1或2所述的微电子组件,其中,所述信号导体为信号接合线,并且所述参考导体为参考接合线。
7.根据权利要求6所述的微电子组件,其中,所述参考接合线中的至少一个接合到所述互连元件的各参考触点。
8.根据权利要求5所述的微电子组件,其中,所述参考接合线包括:第一参考接合线,所述第一参考接合线设置为距离所述微电子装置的高度比所述信号接合线距离所述微电子装置的高度更大;第二参考接合线,所述第二参考接合线设置为距离所述微电子装置的高度比所述信号接合线距离所述微电子装置的高度更低;和第三参考接合线,所述第三参考接合线设置在所述信号接合线中的各个信号接合线之间。
9.根据权利要求5所述的微电子组件,其中,所述参考接合线具有第一端和远离所述第一端的第二端,所述参考接合线中的至少一个具有连接到参考触点的第一端和连接到装置触点的第二端。
10.根据权利要求6所述的微电子组件,其中,所述表面为前表面,所述微电子装置具有远离所述前表面的后表面和在所述前表面和后表面之间延伸的边缘,所述后表面安装到所述互连元件,从而所述信号接合线和参考接合线延伸超出所述微电子装置的边缘。
11.根据权利要求6所述的微电子组件,其中,所述布线的至少一些相对于所述微电子装置的表面成角度倾斜。
12.根据权利要求5所述的微电子组件,其中,所述信号导体的多个布线包括所述信号接合线的至少一部分。
13.根据权利要求12所述的微电子组件,其中,所述信号接合线中的至少一个以多个连接的台阶的台阶式延伸,并且所述参考接合线中的至少一个以距离这样的信号接合线的至少一些台阶均匀的间距而以台阶式延伸。
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2010
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- 2010-03-12 JP JP2011554232A patent/JP2012520572A/ja active Pending
- 2010-03-12 CN CN201080020828.3A patent/CN102428557B/zh not_active Expired - Fee Related
- 2010-03-12 TW TW099107375A patent/TWI441297B/zh not_active IP Right Cessation
- 2010-03-12 WO PCT/US2010/027135 patent/WO2010105152A2/en active Application Filing
- 2010-03-12 EP EP10714121A patent/EP2406822A2/en not_active Withdrawn
- 2010-03-12 US US12/722,799 patent/US8253259B2/en active Active
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2012
- 2012-08-20 US US13/589,558 patent/US8624407B2/en not_active Expired - Fee Related
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2014
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Also Published As
Publication number | Publication date |
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KR100935854B1 (ko) | 2010-01-08 |
WO2010105152A3 (en) | 2011-10-27 |
JP2012520572A (ja) | 2012-09-06 |
JP2015135971A (ja) | 2015-07-27 |
EP2406822A2 (en) | 2012-01-18 |
US20140117567A1 (en) | 2014-05-01 |
CN102428557A (zh) | 2012-04-25 |
US9030031B2 (en) | 2015-05-12 |
TW201431030A (zh) | 2014-08-01 |
US20100232128A1 (en) | 2010-09-16 |
WO2010105152A2 (en) | 2010-09-16 |
US8253259B2 (en) | 2012-08-28 |
TWI441297B (zh) | 2014-06-11 |
US20130140716A1 (en) | 2013-06-06 |
US8624407B2 (en) | 2014-01-07 |
TW201114001A (en) | 2011-04-16 |
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