CN102386885A - Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof - Google Patents
Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof Download PDFInfo
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- CN102386885A CN102386885A CN2011101665121A CN201110166512A CN102386885A CN 102386885 A CN102386885 A CN 102386885A CN 2011101665121 A CN2011101665121 A CN 2011101665121A CN 201110166512 A CN201110166512 A CN 201110166512A CN 102386885 A CN102386885 A CN 102386885A
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Abstract
The invention discloses a surface acoustic wave filter with a high mechanical coupling factor and low insertion loss and a special piezoelectric film thereof. The piezoelectric film is a ZnO piezoelectric film doped with any one of V, Cr and Fe. The surface acoustic wave filter provided by the invention comprises a substrate, the piezoelectric film deposited on the substrate as well as an input interdigital transducer and an output interdigital transducer which are arranged on the ZnO piezoelectric film, wherein the piezoelectric film is the ZnO piezoelectric film doped with any one of V, Cr and Fe. By adopting a material with high surface acoustic wave speed as the substrate, a ZnO film is deposited on the substrate, an electron-beam direct writing process is adopted for preparing a submicron interdigital transducer, and a high frequency film surface acoustic wave filter with frequency greater than 4GHz can be prepared.
Description
Technical field
The present invention relates to a kind of SAW filter and special-purpose piezoelectric membrane thereof, belong to new material and areas of information technology with big electromechanical coupling factor and low insertion loss.
Background technology
SAW device is a kind of important solid electronic device; Advantages such as it is little, in light weight to have volume, and signal handling capacity is strong are widely used in mobile communication; In television broadcasting and all kinds of military radar, the communication system, have great demand and vast potential for future development.Along with the development of third generation mobile technology, the frequency of utilization of SAW device improves constantly, and this just requires the insertion loss of SAW device constantly to reduce.
Thin-film sound surface wave device have the applying frequency scope wide, make simple, with low cost, can be integrated with semiconductor technology, meet the microminiaturized and integrated development trend of piezoelectric device.ZnO film has safety non-toxic, stable in properties, and cost is low, and is good with the silicon matching, and its development technology is the most ripe, and the ZnO film SAW device can be realized suitability for industrialized production at present, is widely used in the every field of military and civilian.Yet the insertion loss of ZnO piezoelectric film SAW device is generally all bigger at present, and along with the frequency of utilization of SAW device improves constantly, its problem of inserting loss is more and more obvious.Tracing it to its cause is because the piezoelectric response of ZnO film is less, its piezoelectric constant d
33Generally have only about 12pC/N, and resistivity neither be very high, generally has only 10
7Ω cm.If can adopt the ZnO film material with big piezoelectric response and high resistivity to prepare SAW filter, its insertion loss just can significantly reduce so.
Summary of the invention
The purpose of this invention is to provide a kind of SAW filter and special-purpose piezoelectric membrane thereof with big electromechanical coupling factor and low insertion loss.
A kind of piezoelectric membrane provided by the invention is any ZnO piezoelectric film among doping V, Cr and the Fe.
In the above-mentioned piezoelectric membrane, the atomic percentage of V can be 0.5%-3.5%, as 2.1%.
In the above-mentioned piezoelectric membrane, the atomic percentage of Cr can be 1.9%-9%, as 1.9%.
In the above-mentioned piezoelectric membrane, the atomic percentage of Fe can be 0.5%-1.7%, as 1.7%.
In the above-mentioned piezoelectric membrane, the thickness of said piezoelectric membrane can be 100nm～500nm, specifically can be 150nm or 250nm; The piezoelectric constant of said piezoelectric membrane can be 110pC/N～200pC/N, specifically can be 110pC/N, 120pC/N or 200pC/N; Resistivity can be 10
7Ω cm～10
14Ω cm specifically can be 10
10Ω cm or 10
11Ω cm.
SAW filter with big electromechanical coupling factor and low insertion loss provided by the invention comprises substrate, is deposited on the said piezoelectric membrane on the said substrate and is located at input interdigital transducer and the output interdigital transducer on the said piezoelectric membrane.
In the above-mentioned SAW filter, the material of said substrate can be diamond, sapphire, DLC, carborundum and corresponding thin-film material.
In the above-mentioned SAW filter, said novel ZnO piezoelectric film can deposit through physical vapour deposition (PVD), chemical vapour deposition (CVD), sol-gel or electrochemical method; Said input interdigital transducer and output interdigital transducer can prepare through electron-beam direct writing technology.
The frequency of SAW filter provided by the invention can be up to more than the 4GHz, and has the characteristics of big electromechanical coupling factor and low insertion loss simultaneously.
The present invention has following beneficial effect: the thin-film sound surface wave filter frequencies of backing material and electron-beam direct writing prepared that adopts high acoustic surface wave speed is up to more than the 4GHz; The novel ZnO film of preparation has big piezoelectric response and high resistivity; Therefore interdigital transducer can carry out power conversion efficiently, so SAW filter has big electromechanical coupling factor and low insertion loss.
Description of drawings
The high-frequency sound surface wave Filter Structures sketch map that Fig. 1 makes for the embodiment of the invention.
Each mark is following among the figure: the ZnO piezoelectric film that 1 diamond, 2V mix, 3 input interdigital transducers, 4 output interdigital transducers.
Embodiment
Employed experimental technique is conventional method like no specified otherwise among the following embodiment.
Used material, reagent etc. like no specified otherwise, all can obtain from commercial sources among the following embodiment.
The making of embodiment 1, SAW filter
Adopt physical vaporous deposition on diamond 1 backing material, to prepare the ZnO novel piezoelectric thin-film 2 that V mixes, the atomic percentage of V is 2.1%, the piezoelectric constant d of the ZnO piezoelectric film that the novel V that makes mixes
33Be 110pC/N, the electricalresistivity is 10
10Ω cm, thickness are 250nm; On the ZnO piezoelectric film that the above-mentioned novel V that makes mixes, adopt electron-beam direct writing technology to make the input interdigital transducer 3 and output interdigital transducer 4 that width is 600nm, obtain SAW filter, as shown in Figure 1.
The frequency of the SAW filter of above-mentioned preparation is 4.2GHz, and electromechanical coupling factor is 20dB up to 2.9% with inserting loss.
The making of embodiment 2, SAW filter
Adopt chemical vapour deposition technique on the DLC backing material, to prepare the novel ZnO piezoelectric film that Cr mixes, the atomic percentage of Cr is 1.9%, and the piezoelectric constant of the novel ZnO piezoelectric film that makes is d
33Be 120pC/N, resistivity is that ρ is 10
11Ω cm, thickness are 250nm; On the ZnO piezoelectric film that the above-mentioned Cr that makes mixes, adopting electron-beam direct writing technology to make width is input interdigital transducer and the output interdigital transducer of 500nm, obtains SAW filter.
The frequency of the SAW filter of above-mentioned preparation is 5GHz, and electromechanical coupling factor is 15dB up to 3% with inserting loss.
The making of embodiment 3, SAW filter
Adopt sol-gel process on saphire substrate material, to prepare the ZnO novel piezoelectric thin-film that Fe mixes, the atomic percentage of Fe is 1.7%, and the piezoelectric constant of the ZnO piezoelectric film that the novel Fe that makes mixes is d
33Be 130pC/N, resistivity is that ρ is 10
10Ω cm, thickness are 150nm; On the ZnO piezoelectric film that the above-mentioned Fe that makes mixes, adopting electron-beam direct writing technology to make width is input interdigital transducer and the output interdigital transducer of 300nm, obtains SAW filter.
The frequency of the SAW filter of above-mentioned preparation is 8GHz, and electromechanical coupling factor is 10dB up to 3% with inserting loss.
Claims (7)
1. piezoelectric membrane is characterized in that: said piezoelectric membrane is any ZnO piezoelectric film among doping V, Cr and the Fe.
2. piezoelectric membrane according to claim 1 is characterized in that: in the said piezoelectric membrane, the atomic percentage of V is 0.5%-3.5%.
3. piezoelectric membrane according to claim 1 is characterized in that: in the said piezoelectric membrane, the atomic percentage of Cr is 1.9%-9%.
4. piezoelectric membrane according to claim 1 is characterized in that: in the said piezoelectric membrane, the atomic percentage of Fe is 0.5%-1.7%.
5. according to arbitrary described piezoelectric membrane among the claim 1-4, it is characterized in that: the thickness of said piezoelectric membrane is 100nm-500nm; The piezoelectric constant of said piezoelectric membrane is 110pC/N-200pC/N; Resistivity is 10
7Ω cm-10
14Ω cm.
6. SAW filter is characterized in that: said SAW filter comprises substrate, be deposited among the claim 1-5 arbitrary described piezoelectric membrane and be located at input interdigital transducer and the output interdigital transducer on the said piezoelectric membrane.
7. filter according to claim 6 is characterized in that: the material of said substrate is diamond, sapphire, DLC or carborundum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101665121A CN102386885A (en) | 2011-06-20 | 2011-06-20 | Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof |
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| CN2011101665121A CN102386885A (en) | 2011-06-20 | 2011-06-20 | Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983833A (en) * | 2012-11-20 | 2013-03-20 | 溧阳市生产力促进中心 | Acoustic surface wave filter |
| CN103023457A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | ZnO piezoelectric film for surface acoustic wave filter |
| CN103023447A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | Piezoelectric film for low-loss surface acoustic wave filter |
| CN103023456A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | Low-loss surface acoustic wave filter |
| CN107017862A (en) * | 2016-06-20 | 2017-08-04 | 石以瑄 | Tunable surface acoustic wave resonators and filter |
| CN108111142A (en) * | 2018-01-24 | 2018-06-01 | 清华大学 | A kind of SAW device based on silicon carbide substrates/zinc oxide or doping zinc-oxide film and preparation method thereof |
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| CN101350608A (en) * | 2008-09-05 | 2009-01-21 | 清华大学 | SAW filter for regulating center frequency of magnetic field and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983833A (en) * | 2012-11-20 | 2013-03-20 | 溧阳市生产力促进中心 | Acoustic surface wave filter |
| CN103023457A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | ZnO piezoelectric film for surface acoustic wave filter |
| CN103023447A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | Piezoelectric film for low-loss surface acoustic wave filter |
| CN103023456A (en) * | 2012-11-20 | 2013-04-03 | 溧阳市生产力促进中心 | Low-loss surface acoustic wave filter |
| CN107017862A (en) * | 2016-06-20 | 2017-08-04 | 石以瑄 | Tunable surface acoustic wave resonators and filter |
| CN108111142A (en) * | 2018-01-24 | 2018-06-01 | 清华大学 | A kind of SAW device based on silicon carbide substrates/zinc oxide or doping zinc-oxide film and preparation method thereof |
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Application publication date: 20120321 |