CN108493325A - A kind of high-frequency high-performance SAW device and preparation method thereof - Google Patents
A kind of high-frequency high-performance SAW device and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of high-frequency high-performance SAW devices and preparation method thereof.The SAW device includes the single-crystal silicon carbide substrate being sequentially overlapped, piezoelectric membrane and interdigital electrode；Piezoelectric membrane is monocrystalline lithium tantalate film or lithium niobate monocrystal film；Single-crystal silicon carbide substrate is 4H SiC single crystals substrate, 6H SiC single crystals substrate, 3C SiC single crystals substrate or 3C SiC epitaxy single-crystal substrates.Single-crystal silicon carbide substrate has the higher velocity of sound, excellent thermal stability and chemical stability and high heat conductance；The crystal quality of lithium tantalate or lithium niobate piezoelectric monocrystal thin films is high, consistency is good, propagation loss is small, using interdigital electrode/lithium tantalate or the SAW device of lithium niobate monocrystal film/single-crystal silicon carbide substrate structure type, with higher centre frequency, high power tolerance, small temperature coefficient, there is huge application prospect in field of mobile communication.
Description
Technical field
The present invention relates to a kind of high-frequency high-performance SAW devices and preparation method thereof, belong to information electronic materials technology
Field.
Background technology
Surface acoustic wave (SAW) device is a kind of important solid electronic device, has small, light-weight, signal processing
The advantages that ability is excellent is widely used in mobile communication, in television broadcasting and all kinds of military radars, communication system.It is same with this
When, the huge advance of semiconductor planar technique, material science and microelectric technique makes other kinds of SAW device, such as
Various sensors, actuator and microfluidic device also obtain in remote-control romote-sensing, aerospace, medical treatment detection, smart home
It is widely applied.Mobile communication system is from 2G, 3G, 4G again to the 5G epoch, and applying frequency is higher and higher, to SAW device
It can require also higher and higher.
Traditional SAW device is completed on the monocrystal chips such as lithium tantalate, lithium niobate.These devices have
Have the advantages that consistency is good, process conditions are ripe, but lithium niobate is relatively low (3500m/s or so) with the lithium tantalate velocity of sound, is made with it
Make the SAW device of 2.5GHz, interdigital finger beam is necessarily less than 350nm, and the corresponding finger beams of 5GHz are less than 175nm, approaches at present partly
The limit of conductor industrial level causes severed finger serious, and yield rate is too low.And it is interdigital smaller, resistance is bigger, power bearing ability
It is smaller, further increasing for SAW device frequency is seriously constrained, and all there is larger temperature drift coefficient.With wireless
The extension to high-frequency, high power and low-temperature coefficient is communicated, they cannot fully meet these requirements.Then various height
Velocity of sound substrate and piezoelectric membrane are used for the making of SAW device, such as diamond self-supporting substrate, diamond thin, eka-gold
Hard rock film, zinc oxide, aluminium nitride etc..Although substrate or piezoelectric membrane all have the very high velocity of sound and thermal conductivity, it is expected to make
Make high frequency high power device, but these substrates or piezoelectric membrane cause with respect to significant deficiency existing for monocrystal chip it is larger
The problems such as propagation loss and poor consistency.It is exactly that Q values are small, and propagation loss is big in these reflections to device, device homogeneity is poor.Study carefully
The reason is that these diamonds are all polycrystalline materials, highdensity crystal defect causes higher propagation loss.In addition to this, raw
The piezoelectric membrane on these substrates is grown, quality can not show a candle to monocrystal chip, and the crystal defect in film is also further degrading
The performance of device.Therefore, there is an urgent need to develop go out a kind of high-frequency high-performance SAW device at present.
Invention content
The object of the present invention is to provide a kind of high-frequency high-performance SAW devices, specially a kind of to be led based on high velocity of sound height
The single-crystal silicon carbide substrate and lithium tantalate of hot low-temperature coefficient or the SAW device of lithium niobate monocrystal film, structure are interdigital
Electrode/lithium tantalate or lithium niobate monocrystal film/single-crystal silicon carbide substrate form.
High-frequency high-performance SAW device provided by the present invention, including be sequentially overlapped single-crystal silicon carbide substrate, pressure
Conductive film and interdigital electrode；
The piezoelectric membrane is monocrystalline lithium tantalate film or lithium niobate monocrystal film.
High-frequency high-performance SAW device of the present invention uses single-crystal silicon carbide substrate as substrate, with preferable sound
Speed, and it is excellent to have that crystal quality is high, consistency is good etc. compared to diamond self-supporting substrate and diamond and DLC film
Point.Since silicon carbide itself does not have piezoelectric property, acoustic-electric conversion can not be carried out, thus the present invention using single-crystal silicon carbide with
The Multilayer system that lithium tantalate or lithium niobate piezoelectric material are combined.The crystal quality of lithium tantalate or lithium niobate piezoelectric monocrystal thin films
Height, consistency is good, is capable of providing excellent performance.
In addition, the present invention uses single-crystal silicon carbide substrate as substrate, also have excellent thermal stability and chemistry steady
Qualitative, high heat conductance and excellent radiation resistance, and production and processing technology is increasingly ripe, is suitble to prepare with high frequency, big work(
The high-performance SAW device of rate, Flouride-resistani acid phesphatase, high-temperature stability.
In above-mentioned SAW device, the single-crystal silicon carbide substrate can be 4H-SiC monocrystal chips, 6H-SiC monocrystalline
Substrate, 3C-SiC monocrystal chips or 3C-SiC epitaxy single-crystal substrates.
In above-mentioned SAW device, the thickness of the single-crystal silicon carbide substrate can be 250~1000 μm.
In above-mentioned SAW device, the thickness of the monocrystalline lithium tantalate film and the lithium niobate monocrystal film is
0.2~5 μm.
In above-mentioned SAW device, the interdigital electrode is made of hearth electrode and top electrode；The composed structure has
Following advantage：The hearth electrode can enhance the binding force between the interdigital electrode and the piezoelectric membrane, and be conducive to
Highly-textured top electrode is grown, the power tolerance of electrode is increased.
The material of the hearth electrode can be at least one of Ti, Ni, Zr and Cr；
The thickness of the hearth electrode can be 1~20nm；
The material of the top electrode can be the alloy of at least one of Al, Cu, Pt, Ta, W and Mo or any two compositions；
The thickness of the top electrode can be 100~200nm；
The interdigital width of the interdigital electrode can be 100nm~5 μm, and the period can be 400nm~20 μm.
The present invention still further provides the preparation method of the SAW device, includes the following steps：
It is legal using direct key, lithium tantanate substrate or lithium niobate substrate are bonded with the single-crystal silicon carbide substrate；By institute
The thickness for stating lithium tantanate substrate or the lithium niobate substrate is polishing to 0.2~5 μm and obtains the piezoelectric membrane；In the piezoelectricity
The interdigital electrode is deposited after photoetching obtain the SAW device on film.
In above-mentioned preparation method, before the bonding steps, the method further include to the single-crystal silicon carbide substrate,
The step of lithium tantanate substrate and the lithium niobate substrate are cleaned；
The step of cleaning, is as follows：Acetone, ethyl alcohol and deionized water respectively ultrasonic cleaning 4~8 minutes are used first, then
Nitrogen dries up.
It is by the technical face of the lithium tantanate substrate or lithium niobate substrate and the silicon carbide list in above-mentioned preparation method
The shiny surface contact bonding of brilliant substrate；
The legal condition of the direct key is as follows：
In vacuum degree<10-4Pa, pressure carry out under conditions of being 800~1000N, and under conditions of 200 DEG C~300 DEG C
Annealing is carried out 5~10 hours, to enhance bonding force.
In above-mentioned preparation method, the polishing includes the following steps：
The lithium tantanate substrate or the lithium niobate substrate are thinned to more than the pressure using wafer grinding mode first
The target thickness of conductive film；Then to the target thickness of the piezoelectric membrane by the way of chemically mechanical polishing；
The surface roughness of the piezoelectric membrane is less than 1nm.
In above-mentioned preparation method, the bottom electricity is sequentially depositing on the piezoelectric membrane by the way of electron beam evaporation plating
Pole and the top electrode；
It is stripped to obtain the interdigital electrode after the deposition step,
The stripping refers to that will plate the substrate after the hearth electrode and the top electrode is put into acetone, removes photoresist
Complete stripping.
Compared with prior art, the present invention has the advantages that：
Single-crystal silicon carbide substrate has the higher velocity of sound, excellent thermal stability and chemical stability and high heat conductance；Tantalum
The crystal quality of sour lithium or lithium niobate piezoelectric monocrystal thin films is high, consistency is good, propagation loss is small, using interdigital electrode/lithium tantalate
Or the SAW device of lithium niobate monocrystal film/single-crystal silicon carbide substrate structure type, there is higher centre frequency, high
Power tolerance, small temperature coefficient have huge application prospect in field of mobile communication.
Description of the drawings
Fig. 1 is high-frequency high-performance surface acoustic wave device structure schematic diagram of the present invention；
It is respectively marked in figure as follows：
1 single-crystal silicon carbide substrate, 2 lithium tantalates or lithium niobate monocrystal film, 3 bottom electrode layers, 4 top electrode layers.
Fig. 2 is the stereoscan photograph of the interdigital electrode of SAW device prepared by the embodiment of the present invention 1.
Fig. 3 is the atomic force microscope shape appearance figure of the interdigital electrode of SAW device prepared by the embodiment of the present invention 1.
Fig. 4 is the coverage diagram of SAW device prepared by the embodiment of the present invention 1.
Fig. 5 is the X ray diffracting spectrum of SAW device interdigital electrode prepared by the embodiment of the present invention 1.
Fig. 6 is the stereoscan photograph of the interdigital electrode of SAW device prepared by the embodiment of the present invention 2.
Fig. 7 is the atomic force microscope shape appearance figure of the interdigital electrode of SAW device prepared by the embodiment of the present invention 2.
Fig. 8 is the coverage diagram of SAW device prepared by the embodiment of the present invention 2.
Fig. 9 is the X ray diffracting spectrum of SAW device interdigital electrode prepared by the embodiment of the present invention 2.
Specific implementation mode
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
Embodiment 1, YZ LiNbO3SAW device is prepared in monocrystal thin films/6H-SiC monocrystal chip structures
(1) by 6H-SiC monocrystal chips (300 μm of thickness), YZ LiNbO3Substrate acetone, alcohol and deionized water are each super
Sound cleans 5 minutes, is then rinsed 2 minutes with deionized water, is finally dried up with nitrogen again.
(2) Direct Bonding is used, by YZ LiNbO3Substrate process face and 6H-SiC monocrystal chip substrate shiny surface contact-keys
It closes.The legal condition of direct key is as follows：It is 8.0 × 10 in vacuum degree-5Pa, pressure carry out under conditions of being 800N, and in 200 DEG C
Under conditions of carry out annealing 5 when, to enhance bonding force.
(3) wafer grinding technique is utilized, by YZ LiNbO330 μm are thinned to, then uses and is chemically mechanically polished to 0.8 μ
M obtains the YZ LiNbO on 6H-SiC monocrystal chips3Monocrystal thin films.
(4) figure photoetching is carried out on above-mentioned substrate, the interdigital width of device of design is 0.5 μm, and the period is 2 μm.By
It is lithographically formed after component graphics, bottoming glue is put into electron beam coater vacuum chamber.At 25 DEG C, electron beam coater is controlled
Total gas pressure is 5 × 10 in system in vacuum chamber-6Pa starts to be deposited, and the evaporation rate of Cr is5nm is deposited, as
Hearth electrode；The evaporation rate of Al is140nm is deposited, as top electrode.
(5) after the completion of being deposited, power supply is closed.It is filled in nitrogen to vacuum chamber into the vacuum chamber of electron beam evaporation plating coating machine
Pressure is atmospheric pressure, begins to speak to take out prepared device.It carries out stripping and prepares interdigital electrode, and then obtain SAW device.
The structural schematic diagram of SAW device manufactured in the present embodiment is as shown in Figure 1, have interdigital electrode (hearth electrode 3/
Top electrode 4) 2/ single-crystal silicon carbide substrate 1 of/lithium tantalate or lithium niobate monocrystal film multi-layer film structure form, specifically, this reality
It applies in example, hearth electrode 3 is the Cr electrodes of 5nm thickness, and top electrode 4 is the Al electrodes of 140nm thickness, and lithium niobate monocrystal film 2 is 0.8 μm
Thick YZ LiNbO3Monocrystal thin films, single-crystal silicon carbide substrate 1 are the 6H-SiC monocrystal chips after 300 μm.
SAW device manufactured in the present embodiment is placed on probe station, is tested, it is as a result as follows：
The stereoscan photograph and atomic force microscope pattern of the interdigital electrode of SAW device manufactured in the present embodiment
Photo difference is as shown in Figures 2 and 3, it can be seen that the item of the interdigital electrode is clear, and rectangular degree is good, and quality is high.
The coverage diagram of SAW device manufactured in the present embodiment is as shown in Figure 4, it can be seen that the surface acoustic wave
The centre frequency 3.1GHz of device has very high frequency；The corresponding velocity of sound is 6130m/s, electromechanical coupling factor 8.9%.
The X ray diffracting spectrum of the interdigital electrode of SAW device manufactured in the present embodiment is as figure 5 illustrates, it can be seen that fork
It is Al (111) strong-texture to refer to electrode, and 2.0 ° of halfwidth is conducive to the power tolerance for improving device.After tested, the power of device
Tolerance is in 3.1GHz up to 33dBm.Temperature drift coefficient is -30ppm/ DEG C.
In YZ LiNbO it can be seen from the above results3Sound surface is prepared in monocrystal thin films/6H-SiC monocrystal chip structures
Wave device, due to single-crystal silicon carbide substrate have the higher velocity of sound, excellent thermal stability and chemical stability, high heat conductance,
And YZ LiNbO3Electric monocrystal thin films crystal quality is high, and consistency is good, and propagation loss is small, therefore uses the sound table of the structure fabrication
Surface wave device has higher centre frequency, high power tolerance and small temperature coefficient, has in field of mobile communication huge
Big application prospect.
2,42 ° of Y-X LiTaO of embodiment3SAW device is prepared in monocrystal thin films/6H-SiC monocrystal chip structures
(1) by 6H-SiC monocrystal chips (500 μm of thickness), 42 ° of Y-X LiTaO3Substrate acetone, alcohol and deionized water
It is each to be cleaned by ultrasonic 5 minutes, it is then rinsed 2 minutes with deionized water, is finally dried up with nitrogen again.
(2) use direct key legal, by 42 ° of Y-X LiTaO3Substrate process face and 6H-SiC monocrystal chip substrate shiny surfaces connect
Touching is closed.The legal condition of direct key is as follows：It is 9.0 × 10 in vacuum degree-5Pa, pressure carry out under conditions of being 800N, and in
When carrying out annealing 8 under conditions of 250 DEG C, to enhance bonding force.
(3) wafer grinding technique is utilized, by 42 ° of Y-X LiTaO350 μm are thinned to, then uses and is chemically mechanically polished to
0.2 μm, obtain 42 ° of Y-X LiTaO on 6H-SiC monocrystal chips3Monocrystal thin films.
(4) figure photoetching is carried out on above-mentioned substrate, the interdigital width of device of design is 0.25 μm, 21 μm of period.By
It is lithographically formed after component graphics, bottoming glue is put into electron beam coater vacuum chamber.At 25 DEG C, electron beam coater is controlled
Total gas pressure is 5 × 10 in system in vacuum chamber-6Pa starts to be deposited, and the evaporation rate of Ti is2nm is deposited, as
Hearth electrode；The evaporation rate of Al is100nm is deposited, as top electrode.
(5) after the completion of being deposited, power supply is closed.It is filled in nitrogen to vacuum chamber into the vacuum chamber of electron beam evaporation plating coating machine
Pressure is atmospheric pressure, begins to speak to take out prepared device.It carries out stripping and prepares interdigital electrode, and then obtain SAW device.
The structural schematic diagram of SAW device manufactured in the present embodiment is as shown in Figure 1, have interdigital electrode (hearth electrode 3/
Top electrode 4) 2/ single-crystal silicon carbide substrate 1 of/lithium tantalate or lithium niobate monocrystal film multi-layer film structure form, specifically, this reality
It applies in example, hearth electrode 3 is the Ti electrodes of 2nm thickness, and top electrode 4 is the Al electrodes of 100nm thickness, and monocrystalline lithium tantalate film 2 is 0.2 μm
42 ° of thick Y-X LiTaO3Monocrystal thin films, single-crystal silicon carbide substrate 1 are the 6H-SiC monocrystal chips after 500 μm.
SAW device manufactured in the present embodiment is placed on probe station, is tested, it is as a result as follows：
The stereoscan photograph and atomic force microscope pattern of the interdigital electrode of SAW device manufactured in the present embodiment
Photo difference is as shown in Figures 6 and 7, it can be seen that the svelteness of the interdigital electrode, rectangular degree is good, and quality is high.
The coverage diagram of SAW resonator manufactured in the present embodiment was as shown in figure 8, it can be seen from this figure that should
The centre frequency of SAW device is 6.13GHz, and it is 6130m/s, electromechanical coupling to have very high frequency, the corresponding velocity of sound
Number is 4.5%.
The X ray diffracting spectrum of the interdigital electrode of SAW device manufactured in the present embodiment is as figure 9, it can be seen that fork
It is Al (111) strong-texture to refer to electrode, and 1.8 ° of halfwidth is conducive to the power tolerance for improving device.After tested, the power of device
Tolerance is in 6.13GHz up to 32dBm.Temperature drift coefficient is -15ppm/ DEG C.
In 42 ° of Y-X LiTaO it can be seen from the above results3Sound is prepared in monocrystal thin films/6H-SiC monocrystal chip structures
Surface wave device, it is highly thermally conductive since single-crystal silicon carbide substrate has the higher velocity of sound, excellent thermal stability and chemical stability
Rate；42°Y-X LiTaO3Piezoelectric monocrystal film crystal quality is high, and consistency is good, and propagation loss is small, therefore uses the structure fabrication
SAW device have higher centre frequency, high power tolerance and small temperature coefficient, mobile communication lead
There is huge application prospect in domain.
Claims (9)
1. a kind of SAW device, including the single-crystal silicon carbide substrate, piezoelectric membrane and the interdigital electrode that are sequentially overlapped；
The piezoelectric membrane is monocrystalline lithium tantalate film or lithium niobate monocrystal film.
2. SAW device according to claim 1, it is characterised in that：The single-crystal silicon carbide substrate is that 4H-SiC is mono-
Brilliant substrate, 6H-SiC monocrystal chips, 3C-SiC monocrystal chips or 3C-SiC epitaxy single-crystal substrates.
3. SAW device according to claim 1 or 2, it is characterised in that：The thickness of the single-crystal silicon carbide substrate
It is 250~1000 μm.
4. SAW device according to any one of claim 1-3, it is characterised in that：The monocrystalline lithium tantalate film
Thickness with the lithium niobate monocrystal film is 0.2~5 μm.
5. according to the SAW device described in any one of claim 1-4, it is characterised in that：The interdigital electrode is by bottom electricity
Pole and top electrode composition；
The material of the hearth electrode is at least one of Ti, Ni, Zr and Cr；
The thickness of the hearth electrode is 1~20nm；
The material of the top electrode is the alloy of at least one of Al, Cu, Pt, Ta, W and Mo or any two compositions；
The thickness of the top electrode is 100~200nm；
The interdigital width of the interdigital electrode is 100nm~5 μm, and the period is 400nm~20 μm.
6. the preparation method of any one of the claim 1-5 SAW devices, includes the following steps：
It is legal using direct key, lithium tantanate substrate or lithium niobate substrate are bonded with the single-crystal silicon carbide substrate；By the tantalum
The thickness of sour lithium substrate or the lithium niobate substrate is polishing to 0.2~5 μm and obtains the piezoelectric membrane；In the piezoelectric membrane
On deposit the interdigital electrode after photoetching and obtain the SAW device.
7. preparation method according to claim 6, it is characterised in that：Before the bonding steps, the method further includes
The step of single-crystal silicon carbide substrate, the lithium tantanate substrate and the lithium niobate substrate are cleaned；
The step of cleaning, is as follows：Acetone, ethyl alcohol and deionized water respectively ultrasonic cleaning 4~8 minutes are used first, then nitrogen
Drying.
8. the preparation method described according to claim 6 or 7, it is characterised in that：The polishing includes the following steps：
The lithium tantanate substrate or the lithium niobate substrate are thinned to using wafer grinding mode first thin more than the piezoelectricity
The target thickness of film；Then to the target thickness of the piezoelectric membrane by the way of chemically mechanical polishing；
The surface roughness of the piezoelectric membrane is less than 1nm.
9. according to the preparation method described in any one of claim 6-8, it is characterised in that：By the way of electron beam evaporation plating
The hearth electrode and the top electrode are sequentially depositing on the piezoelectric membrane.
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| CN110138356A (en) * | 2019-06-28 | 2019-08-16 | 中国科学院上海微***与信息技术研究所 | A kind of high-frequency sound surface wave resonator and preparation method thereof |
| CN110318098A (en) * | 2019-07-30 | 2019-10-11 | 江西匀晶光电技术有限公司 | A kind of substrate of SAW device and preparation method thereof with artificial farmland construction |
| CN112259676B (en) * | 2020-10-19 | 2022-11-01 | 济南晶正电子科技有限公司 | Film bonding body with pattern, preparation method and electronic device |
| CN112259676A (en) * | 2020-10-19 | 2021-01-22 | 济南晶正电子科技有限公司 | Film bonding body with pattern, preparation method and electronic device |
| CN112737541A (en) * | 2020-12-24 | 2021-04-30 | 北京航天微电科技有限公司 | TC-SAW resonator, manufacturing method and filter |
| CN112737541B (en) * | 2020-12-24 | 2023-09-29 | 北京航天微电科技有限公司 | TC-SAW resonator, manufacturing method and filter |
| CN113300683A (en) * | 2021-05-25 | 2021-08-24 | 中国科学院上海微***与信息技术研究所 | Surface acoustic wave resonator and preparation method thereof |
| CN113300683B (en) * | 2021-05-25 | 2023-03-10 | 中国科学院上海微***与信息技术研究所 | Surface acoustic wave resonator and preparation method thereof |
| CN113242030A (en) * | 2021-05-31 | 2021-08-10 | 天津大学 | Dynamic array nano material strain platform based on surface acoustic wave device |
| CN113640915A (en) * | 2021-08-20 | 2021-11-12 | 南京南智先进光电集成技术研究院有限公司 | Small-period Z-cut piezoelectric wafer, thin film, waveguide and preparation method thereof |
| CN113640915B (en) * | 2021-08-20 | 2023-11-14 | 南京南智先进光电集成技术研究院有限公司 | Small-period Z-cut piezoelectric wafer, thin film, waveguide and preparation method thereof |
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