CN203191355U - Surface acoustic wave gas sensor - Google Patents
Surface acoustic wave gas sensor Download PDFInfo
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- CN203191355U CN203191355U CN 201320211867 CN201320211867U CN203191355U CN 203191355 U CN203191355 U CN 203191355U CN 201320211867 CN201320211867 CN 201320211867 CN 201320211867 U CN201320211867 U CN 201320211867U CN 203191355 U CN203191355 U CN 203191355U
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- wave gas
- surface wave
- interdigital
- piezoelectric substrate
- gas sensors
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Abstract
The utility model discloses a surface acoustic wave gas sensor which comprises a piezoelectric substrate, interdigital transducers and a sensitive thin film. The surface acoustic wave gas sensor is characterized in that the piezoelectric substrate uses an SNGS piezoelectric crystal and the sensitive thin film is coated between the interdigital transducers. The surface acoustic wave gas sensor has the characteristics of low insertion loss, high bandwidth, high temperature stability and high electromechanical coupling factor.
Description
Technical field
The utility model relates to sensor technical field, specifically a kind of sonic surface wave gas sensors.
Background technology
The principle of work of sonic surface wave gas sensors is the variation that the absorption of gas to be measured is caused surface acoustic wave sensor speed by the sensitive thin film on the passage between input interdigital transducer and the output interdigital transducer, thereby the variation of output and incoming frequency takes place, cause the drift of surface acoustic wave oscillation frequency, to realize the detection to gas to be measured.Sonic surface wave gas sensors was developed the seventies in last century, because sonic surface wave gas sensors has characteristics such as volume is little, in light weight, precision is high, resolution is high, antijamming capability is strong, and manufacture craft is simple, and cost is low, is the important supplement of gas sensor.In recent years, along with semiconductor process technology improves, the high-frequency sound surface wave device range of application constantly enlarges, and has almost covered whole communications fields.Along with the constantly development and enlarging of sonic surface wave gas sensors technical applications and scope, traditional piezoelectric as: quartz, lithium niobate, lithium tantalate etc. can not satisfy the demands far away.In recent years, LGS, niobic acid gallium lanthanum, tantalic acid gallium lanthanum, the isostructural crystal of phosphoric acid gallium are as a kind of New piezoelectric crystal material of function admirable, has higher electromechanical coupling factor, lower acoustic surface wave propagation speed, low Insertion Loss, fine qualities such as high bandwidth have caused both at home and abroad and have paid close attention to widely.2010 the 29th the 1st phases of volume of document silicate is circulated a notice of (structure of S12NGS piezoelectric crystal and acoustic surface wave propagation characteristic research) and is pointed out the little of (1) SNGS crystal acoustic surface wave speed ratio quartz, acoustic surface wave speed is easily realized device miniaturization when SAW (Surface Acoustic Wave) device between 2900 ~ 3100 m/s; (2) the SNGS crystal X maximal value of cutting with Y cutter electric coupling coefficient is respectively 0.72 and 0.62, far above the maximal value of quartz crystal electromechanical coupling factor.
Summary of the invention
The weak point that the utility model exists for fear of prior art, a kind of sonic surface wave gas sensors is provided, this sonic surface wave gas sensors is substrate with the SNGS piezoelectric crystal, can realize low Insertion Loss, high bandwidth, highly sensitive, electromechanical coupling factor is high demand.
For solving the problems of the technologies described above, technical scheme that the utility model adopts is as follows:
A kind of sonic surface wave gas sensors comprises piezoelectric substrate, interdigital transducer, sensitive thin film composition, it is characterized in that described piezoelectric substrate is the SNGS piezoelectric crystal, scribbles sensitive thin film between described interdigital transducer.
The utility model design feature also is:
Described piezoelectric crystal material SNGS, namely
Sr 3 NbGa 3 Si 2 O 14 , belonging to trigonal system, its space group is P321, its cell parameter is a=0. 8279nm, b=0. 8279 nm, c=0. 5039 nm, 6866 g/cm3 of density p=4..
Described interdigital transducer is at piezoelectric substrate preparation AL film, again the AL film is made interdigital transducers electrodes; Wherein interdigital logarithm is 28 pairs, interdigital electrode width 0.4 μ m, interdigital spacing 0.4 μ m, thickness 40nm.
Scribble sensitive thin film between described interdigital transducer.
Compared with the prior art, the utility model beneficial effect is embodied in:
The SNGS crystal is compared with quartz crystal, and the crystal electromechanical coupling factor is bigger.
The SNGS crystal can be realized the low Insertion Loss of sonic surface wave gas sensors, high bandwidth.
Sensitive thin film has suction-operated to detecting gas, and surface acoustic wave is exerted an influence.
Description of drawings
The sonic surface wave gas sensors structural representation that Fig. 1 the utility model relates to.
Number in the figure: 1 piezoelectric substrate, 2 interdigital transducers, 3 sensitive thin films.
Embodiment
The utility model is described further by embodiment below in conjunction with accompanying drawing.
As shown in the figure, what piezoelectric substrate 1 of the present utility model adopted is the SNGS piezoelectric crystal, namely
Sr 3 NbGa 3 Si 2 O 14 , belonging to trigonal system, its space group is P321, its cell parameter is a=0. 8279nm, b=0. 8279 nm, c=0. 5039 nm, 6866 g/cm3 of density p=4..Adopting electron-beam vapor deposition method is the AL film of 100nm at piezoelectric substrate 1 deposition one layer thickness, and roughness is made the electrode of interdigital transducer 2 less than 4nm through etching technics; Interdigital electrode width 0.4 μ m, interdigital spacing 0.4 μ m, thickness 40nm; Adopt preparation sensitive thin film 3 at piezoelectric substrate 1,3 pairs of sensitive thin films detect gas and have suction-operated, and surface acoustic wave is exerted an influence.
Claims (4)
1. a sonic surface wave gas sensors comprises piezoelectric substrate, interdigital transducer, sensitive thin film composition, it is characterized in that described piezoelectric substrate is the SNGS piezoelectric crystal, scribbles sensitive thin film between described interdigital transducer.
2. a kind of sonic surface wave gas sensors according to claim 1 is characterized in that, described piezoelectric substrate is the SNGS piezoelectric crystal, namely
Sr 3 NbGa 3 Si 2 O 14 , belonging to trigonal system, its space group is P321, its cell parameter is a=0. 8279nm, b=0. 8279 nm, c=0. 5039 nm, 6866 g/cm3 of density p=4..
3. a kind of sonic surface wave gas sensors according to claim 1 is characterized in that, described interdigital transducer is at piezoelectric substrate preparation AL film, the AL film is made interdigital transducer IDT electrode again; Wherein interdigital logarithm is 28 pairs, interdigital electrode width 0.4 μ m, interdigital spacing 0.4 μ m, thickness 40nm.
4. a kind of sonic surface wave gas sensors according to claim 1 is characterized in that scribbling sensitive thin film between described interdigital transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320211867 CN203191355U (en) | 2013-04-24 | 2013-04-24 | Surface acoustic wave gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320211867 CN203191355U (en) | 2013-04-24 | 2013-04-24 | Surface acoustic wave gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203191355U true CN203191355U (en) | 2013-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320211867 Expired - Fee Related CN203191355U (en) | 2013-04-24 | 2013-04-24 | Surface acoustic wave gas sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN203191355U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105334348A (en) * | 2014-08-15 | 2016-02-17 | 中国科学院上海硅酸盐研究所 | High temperature acceleration sensor |
| CN110196277A (en) * | 2019-06-17 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of new type of SAW moisture sensor |
-
2013
- 2013-04-24 CN CN 201320211867 patent/CN203191355U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105334348A (en) * | 2014-08-15 | 2016-02-17 | 中国科学院上海硅酸盐研究所 | High temperature acceleration sensor |
| CN110196277A (en) * | 2019-06-17 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of new type of SAW moisture sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130911 Termination date: 20140424 |