CN113381725A - SAW resonator structure beneficial to miniaturization and bandwidth expansion and SAW filter - Google Patents
SAW resonator structure beneficial to miniaturization and bandwidth expansion and SAW filter Download PDFInfo
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- CN113381725A CN113381725A CN202110736815.6A CN202110736815A CN113381725A CN 113381725 A CN113381725 A CN 113381725A CN 202110736815 A CN202110736815 A CN 202110736815A CN 113381725 A CN113381725 A CN 113381725A
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- 230000009286 beneficial effect Effects 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910003327 LiNbO3 Inorganic materials 0.000 claims abstract description 7
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 16
- 238000010168 coupling process Methods 0.000 abstract description 16
- 238000005859 coupling reaction Methods 0.000 abstract description 16
- 238000010295 mobile communication Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 79
- 235000019687 Lamb Nutrition 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses an SAW resonator structure and an SAW filter which are beneficial to miniaturization and bandwidth expansion, the SAW resonator structure sequentially comprises a substrate, a temperature compensation layer, a piezoelectric film layer and a transducer interdigital electrode from bottom to top, wherein the substrate is made of Si, and the temperature compensation layer is made of SiO2The piezoelectric film layer is made of 15-degree LiNbO3And (4) preparing. The SAW resonator structure can obtain a larger electromechanical coupling coefficient and a lower sound velocity sound wave mode, so that the SAW resonator structure has the advantages of facilitating miniaturization design and expanding bandwidth, can reduce the volume and the manufacturing cost of the SAW resonator, and can better meet the requirements of mobile communication on SAW filters with large bandwidth and miniaturization design; in addition, the preparation process of the SAW resonator structure is easy to implementAt present, the SAW filter is easy to be popularized and applied to small SAW filter products with larger bandwidth requirements in a large scale.
Description
Technical Field
The invention relates to the technical field of information electronic materials, in particular to an SAW resonator (surface acoustic wave resonator) structure and an SAW filter (surface acoustic wave filter) which are beneficial to miniaturization and bandwidth expansion.
Background
The radio frequency front-end filter is used for filtering various interference signals such as various parasitic clutter, noise and the like, mainly comprises a filter/duplexer, a power amplifier, a tag and other device units, and is one of core components of a mobile terminal product. Because a Surface Acoustic Wave (SAW) filter has the characteristics of small size, good consistency, high reliability, low loss, good filtering performance and the like, the SAW filter has become the most mainstream radio frequency front-end filter for military radars, satellite communication electronics, mobile terminals and the like. With the advent of the 5G era, it is very important to develop a large-bandwidth rf acoustic filter for mobile communication to realize faster rate transmission and data traffic with a steeply increased geometric level.
SAW filters are usually constructed by cascading a plurality of SAW resonators. The existing SAW resonator usually utilizes a structure of a uniform interdigital single-ended resonator, as shown in fig. 1, an interdigital electrode of the interdigital transducer of the present resonator is an interdigital transducer composed of two uniform comb-shaped interdigital electrodes and two uniform short-circuit reflection gratings, the two short-circuit gratings are respectively located on two sides of the center comb-shaped interdigital electrode and have equal distances to the comb-shaped interdigital electrodes, and the short-circuit reflection gratings are used for reflecting a surface acoustic wave generated on the surface of a piezoelectric material, so as to bind the surface acoustic wave in the resonator and prevent the surface acoustic wave from leaking. While the bandwidth and miniaturized design of SAW resonators and SAW filters mainly depend on the electromechanical coupling coefficient and the acoustic velocity of their piezoelectric substrates. The traditional SAW resonator is mainly composed of lithium tantalate (LiTaO)3) Lithium niobate (LiNbO)3) Making transducers on piezoelectric substrates of isomorphic materialsThe electromechanical coupling coefficient of the interdigital electrode of the energy device is generally lower than 10%, the relative bandwidth of the SAW resonator of the piezoelectric substrate made of lithium tantalate crystal material is generally 1% -3%, and the relative bandwidth of the SAW resonator of the piezoelectric substrate made of lithium niobate crystal material can reach 3% -15% generally, but parasitic waves and clutter are easy to appear after the relative bandwidth exceeds 10%, so that the filtering performance of the interdigital electrode used for the filter is affected, and therefore, the SAW resonator technology in the prior art limits the application of the interdigital electrode in SAW filters requiring larger bandwidth. On the other hand, the traditional SAW resonator mainly adopts LiTaO3、LiNbO3The sound velocity of the materials used as a substrate is about 3800m/s, and the high sound velocity limits the design and application of the miniaturized structure.
In summary, how to improve the electromechanical coupling coefficient and reduce the acoustic velocity is further beneficial to the miniaturization and bandwidth improvement of the SAW resonator, so that the SAW resonator can be applied to a miniaturized SAW filter with a larger bandwidth, and the problem to be solved by the technical personnel in the field is urgently needed.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, an object of the present invention is to provide a SAW resonator structure which is beneficial to miniaturization and bandwidth expansion, and which improves the electromechanical coupling coefficient and reduces the acoustic velocity through the structural design, thereby solving the problem that the SAW resonator in the prior art is difficult to take into account both miniaturization and bandwidth improvement.
In order to solve the technical problems, the invention adopts the following technical scheme:
a SAW resonator structure beneficial to miniaturization and bandwidth expansion sequentially comprises a substrate, a temperature compensation layer, a piezoelectric film layer and a transducer interdigital electrode from bottom to top, wherein the substrate is made of Si, and the temperature compensation layer is made of SiO2The piezoelectric film layer is made of 15-degree LiNbO3And (4) preparing.
In the SAW resonator structure advantageous for miniaturization and bandwidth enlargement described above, the thickness of the piezoelectric thin film layer is preferably 0.1 to 0.5 λ, where λ denotes a wavelength.
In the SAW resonator structure which is beneficial to miniaturization and bandwidth expansion, the thickness of the temperature compensation layer is 50-500nm as a preferable scheme.
In the SAW resonator structure which is beneficial to miniaturization and bandwidth expansion, the interdigital electrode of the transducer is any one of an Al electrode, a Cu electrode, a Pt electrode, an Au electrode or a multilayer composite electrode as a preferable scheme.
In the above SAW resonator structure advantageous for miniaturization and bandwidth enlargement, as a preferred embodiment, the SAW resonator structure is prepared by the following method:
s1) polishing and cleaning the substrate made of Si material;
s2) growing SiO on the substrate by using chemical vapor deposition method or pulse laser deposition method2A temperature compensation layer of material;
s3) growing 15-degree LiNbO on the temperature compensation layer by using a chemical vapor deposition method or a pulse laser deposition method3A piezoelectric thin film layer of a material;
s4) growing an electrode layer on the piezoelectric thin film layer, arranging a photoresist mask on the surface of the electrode layer according to the gap position of the interdigital electrode of the transducer, and etching the electrode layer to form the interdigital electrode of the transducer, thereby obtaining the SAW resonator structure.
Correspondingly, the invention also provides a SAW filter which is beneficial to miniaturization and bandwidth expansion, and the specific technical scheme is as follows:
a SAW filter, on which a SAW resonator structure as described above is cascaded, is advantageous in miniaturization and enlargement of bandwidth.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the SAW resonator structure can obtain a larger electromechanical coupling coefficient and a lower sound velocity sound wave mode, the bandwidth of the SAW resonator can be improved by utilizing the performance of the larger electromechanical coupling coefficient, and the miniaturization design of the SAW resonator structure is facilitated by utilizing the performance of the lower sound velocity; therefore, the SAW resonator structure of the invention has the advantages of facilitating miniaturization design and expanding bandwidth.
2. The structural design of the SAW resonator can reduce the volume and the manufacturing cost of the SAW resonator, and can better meet the requirements of mobile communication on the SAW filter with large bandwidth and miniaturized design.
3. The preparation process of the SAW resonator structure is easy to realize, and is easy to popularize and apply in a large scale to miniaturized SAW filter products with larger bandwidth requirements.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present application as illustrated in the accompanying drawings, in which:
fig. 1 is a schematic diagram of an interdigital electrode arrangement of a SAW resonator.
Fig. 2 is a schematic structural diagram of a SAW resonator structure of the present invention, which is advantageous for miniaturization and bandwidth expansion.
FIG. 3 shows different SiO2Under the condition of thickness, 15-degree X-Z tangential LiNbO with different thicknesses3(normalized thickness) plot of the velocity of the main mode SH wave.
FIG. 4 shows different SiO2Under the condition of thickness, 15-degree X-Z tangential LiNbO with different thicknesses3Graph of electromechanical coupling coefficient of main mode SH wave (normalized thickness).
FIG. 5 is a graph of the admittance of an SH wave excited by a SAW resonator structure of the present invention over a frequency range of 1000MHz to 2200 MHz.
FIG. 6 is a graph of the frequency response of a filter designed using the SAW resonator structure of the present invention over the frequency range of 1000MHz to 2200 MHz.
Description of reference numerals: the device comprises a substrate 4, a temperature compensation layer 3, a piezoelectric film layer 2 and a transducer interdigital electrode 1.
Detailed Description
The present application will now be described in further detail with reference to the accompanying drawings.
As shown in FIG. 2, the invention discloses a SAW resonator structure beneficial to miniaturization and bandwidth expansion, which comprises a substrate, a temperature compensation layer, a piezoelectric film layer and a transducer interdigital electrode (an interdigital transducer is arranged on the piezoelectric film) from bottom to top in sequence, wherein the substrate is made of Si, and the temperature compensation layer is made of SiO2Made of piezoelectric filmUsing 15 degree LiNbO3And (4) preparing. Using 15 degree X-Z tangential LiNbO3Piezoelectric material with SH wave as main wave exciting mode and stress constant e34Is a very important parameter, so that the selected 15-degree X-Z tangential direction has a larger electromechanical coupling coefficient, and is beneficial to the design of a large-bandwidth filter; meanwhile, excited sound waves are generated in the piezoelectric thin layer LiNbO3Continuously reflecting and refracting to form Lamb waves; due to the frequency dispersion characteristic of Lamb waves, the thickness is controlled within a proper range, so that the SH wave mode with low sound velocity can be excited, and the requirements of mobile communication on SAW filters with large bandwidth and miniaturized design can be better met.
The SAW resonator structure is prepared by the following method:
s1) polishing and cleaning the substrate made of Si material;
s2) growing SiO on the substrate by using chemical vapor deposition method or pulse laser deposition method2A temperature compensation layer of material;
s3) growing 15-degree LiNbO on the temperature compensation layer by using a chemical vapor deposition method or a pulse laser deposition method3A piezoelectric thin film layer of a material;
s4) growing an electrode layer on the piezoelectric thin film layer, arranging a photoresist mask on the surface of the electrode layer according to the gap position of the interdigital electrode of the transducer, and etching the electrode layer to form the interdigital electrode of the transducer, thereby obtaining the SAW resonator structure.
In specific implementation, the thickness of the piezoelectric film layer is 0.1-0.5 lambda, and lambda represents the wavelength. The excited sound wave is reflected and refracted ceaselessly in the piezoelectric thin layer to form Lamb waves. Due to the frequency dispersion characteristic of Lamb waves, the thickness of the piezoelectric film layer is controlled within a proper range of 0.1-0.5 lambda, so that other sound wave modes can be reduced from being excited, and the excited double sound wave modes can achieve the optimal performance.
As shown in FIG. 3, SiO is deposited in different temperature compensation layers2Under the condition of thickness, 15-degree X-Z tangential LiNbO of piezoelectric thin film layers with different thicknesses is respectively researched3The sound velocity of the main mode SH wave (normalized thickness); in FIG. 3, the ordinate represents the phase velocity V of the SH wave of the main modepThe abscissa is 15 degrees X-Z tangential LiNbO of the piezoelectric film layer3The normalized thickness h/lambda of (a) represents the wavelength, h represents the 15 DEG X-Z tangential LiNbO of the piezoelectric film layer3Absolute thickness value of (a); as can be seen from FIG. 3, the phase velocities of the main mode SH waves of the piezoelectric thin film layer with the thickness of 0.1-0.5 lambda interval are all lower than 3000m/s, and all have lower sound velocity, and meanwhile, when the temperature compensation layer SiO is formed2When the thickness is 100nm, the sound velocity is minimum, and the design of a small SAW resonator and a small SAW filter is facilitated.
In specific implementation, the thickness of the temperature compensation layer is 50-500 nm. The excited sound wave is reflected and refracted ceaselessly in the temperature compensation layer to form Lamb wave. Due to the frequency dispersion characteristic of Lamb waves, the thickness of the temperature compensation layer is controlled within a proper range of 50-500nm, and other sound wave modes can be reduced from being excited, so that the excited double sound wave modes achieve the optimal performance. Meanwhile, due to the existence of the temperature compensation layer, the temperature stability of the resonator and the filter can be better improved.
As shown in FIG. 4, SiO is deposited in different temperature compensation layers2Under the condition of thickness, 15-degree X-ZLNbO piezoelectric thin film layers with different thicknesses are respectively researched3The electromechanical coupling coefficient of the main mode SH wave (normalized thickness); in FIG. 4, the ordinate represents the electromechanical coupling coefficient K of the phase velocity of the main mode SH2The abscissa is 15 degrees X-Z tangential LiNbO of the piezoelectric film layer3The normalized thickness h/lambda of (a) represents the wavelength, h represents the 15 DEG X-Z tangential LiNbO of the piezoelectric film layer3Absolute thickness value of (a); as can be seen from FIG. 4, the electromechanical coupling coefficients of the temperature compensation layer with the thickness in the range of 50-500nm can reach a higher level, the electromechanical coupling coefficients are all larger than 22%, and meanwhile, when the SiO of the temperature compensation layer2When the thickness is 100nm, the electromechanical coupling coefficient is the largest, the highest value is close to 32%, the SAW resonator can have larger bandwidth, and the design of the SAW filter with large bandwidth is facilitated.
In specific implementation, the interdigital electrode of the transducer is any one of an interdigital electrode of an Al transducer, an interdigital electrode of a Cu transducer, an interdigital electrode of a Pt transducer, an interdigital electrode of an Au transducer or an interdigital electrode of a multilayer composite transducer.
In order to better embody the performance characteristics of the SAW resonator structure, the admittance curve of the SH wave excited by the SAW resonator structure in the frequency range of 1000MHz-2200MHz and the frequency response curve of a filter designed by the SAW resonator structure in the frequency range of 1000MHz-2200MHz are also simulated.
Fig. 5 shows an admittance curve graph of SH wave excited by the SAW resonator structure of the present invention in a frequency range of 1000MHz-2200MHz, and it can be seen from fig. 5 that the relative bandwidth of the resonator designed by the structure of the present invention (frequency width occupied before the peak and the trough in the admittance curve divided by the median frequency of the peak and the trough) can reach more than 15%, so, considering that if at least two SAW resonator structures of the present invention are cascaded on a SAW filter, the relative bandwidth of the SAW filter adopting the SAW resonator structure of the present invention can reach more than 30%, compared with the prior art, the relative bandwidth is significantly improved.
Fig. 6 shows a frequency response curve of a filter designed by using the SAW resonator structure of the present invention in a frequency range of 1000MHz to 2200MHz, and it can be seen from fig. 6 that the filter has good acoustic performance and electrical performance, and the pass band and the stop band have no other spurious wave modes in a frequency range of 1000MHz to 2200MHz, which indicates that the SAW resonator structure of the present invention is very suitable for designing a large-bandwidth and miniaturized SAW filter.
In conclusion, the SAW resonator structure can obtain a larger electromechanical coupling coefficient and a lower sound velocity sound wave mode, the bandwidth of the SAW resonator can be improved by utilizing the larger electromechanical coupling coefficient, and the miniaturization design of the SAW resonator structure is facilitated by utilizing the lower sound velocity performance of the SAW resonator; therefore, the SAW resonator structure has the advantages of facilitating miniaturization design and expanding bandwidth, can reduce the volume and the manufacturing cost of the SAW resonator, and can better meet the requirements of mobile communication on the SAW filter with large bandwidth and miniaturization design; in addition, the preparation process of the SAW resonator structure is easy to realize, and the preparation process is easy to popularize and apply in a large scale to miniaturized SAW filter products with larger bandwidth requirements.
Finally, it is noted that the above-mentioned embodiments illustrate rather than limit the invention, and that, while the application has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the application as defined by the appended claims.
Claims (6)
1. The SAW resonator structure is characterized by sequentially comprising a substrate, a temperature compensation layer, a piezoelectric film layer and a transducer interdigital electrode from bottom to top, wherein the substrate is made of Si, and the temperature compensation layer is made of SiO2The piezoelectric film layer is made of 15-degree LiNbO3And (4) preparing.
2. A SAW resonator structure facilitating miniaturization and bandwidth expansion according to claim 1, wherein the thickness of the piezoelectric thin film layer is 0.1-0.5 λ, λ representing a wavelength.
3. A SAW resonator structure facilitating miniaturization and widening of a bandwidth according to claim 1, wherein a thickness of the temperature compensation layer is 50-500 nm.
4. A SAW resonator structure facilitating miniaturization and bandwidth expansion according to any one of claims 1-3, wherein the transducer interdigital electrode employs any one of Al electrode, Cu electrode, Pt electrode, Au electrode or multilayer composite electrode.
5. A SAW resonator structure facilitating miniaturization and bandwidth expansion, according to claim 1, wherein said SAW resonator structure is prepared by:
s1) polishing and cleaning the substrate made of Si material;
s2) growing SiO on the substrate by using chemical vapor deposition method or pulse laser deposition method2A temperature compensation layer of material;
s3) growing 15-degree LiNbO on the temperature compensation layer by using a chemical vapor deposition method or a pulse laser deposition method3A piezoelectric thin film layer of a material;
s4) growing an electrode layer on the piezoelectric thin film layer, arranging a photoresist mask on the surface of the electrode layer according to the gap position of the interdigital electrode of the transducer, and etching the electrode layer to form the interdigital electrode of the transducer, thereby obtaining the SAW resonator structure.
6. A SAW filter facilitating miniaturization and bandwidth expansion, wherein said SAW filter has associated therewith an upper stage SAW resonator structure as claimed in any one of claims 1 to 5.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114726334A (en) * | 2022-04-28 | 2022-07-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
| CN114793103A (en) * | 2022-04-28 | 2022-07-26 | 重庆大学 | Acoustic wave resonator suitable for multi-parameter sensing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112217490A (en) * | 2020-10-22 | 2021-01-12 | 展讯通信（上海）有限公司 | Laminated temperature compensation type surface acoustic wave resonator and packaging method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112217490A (en) * | 2020-10-22 | 2021-01-12 | 展讯通信（上海）有限公司 | Laminated temperature compensation type surface acoustic wave resonator and packaging method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114726334A (en) * | 2022-04-28 | 2022-07-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
| CN114793103A (en) * | 2022-04-28 | 2022-07-26 | 重庆大学 | Acoustic wave resonator suitable for multi-parameter sensing |
| CN114726334B (en) * | 2022-04-28 | 2023-08-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
| CN114793103B (en) * | 2022-04-28 | 2024-03-26 | 重庆大学 | Acoustic wave resonator suitable for multi-parameter sensing |
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