CN106160691A - A kind of High Frequency SAW Device based on Si base and preparation method thereof - Google Patents
A kind of High Frequency SAW Device based on Si base and preparation method thereof Download PDFInfo
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- CN106160691A CN106160691A CN201610528353.8A CN201610528353A CN106160691A CN 106160691 A CN106160691 A CN 106160691A CN 201610528353 A CN201610528353 A CN 201610528353A CN 106160691 A CN106160691 A CN 106160691A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 9
- 239000010432 diamond Substances 0.000 claims description 23
- 229910003460 diamond Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 241000057467 Quadraseta trapezoides Species 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 28
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention relates to SAW device and manufacture field, be specifically related to a kind of High Frequency SAW Device based on Si base and preparation method thereof.This High Frequency SAW Device is multi-layer film structure, includes Si base, high velocity of sound layer, piezoelectric layer and interdigital transducer from bottom to up successively.The back side of Si base is provided with groove, so that the propagation of surface acoustic wave is confined in high velocity of sound layer, to improve the centre frequency of this device.The SAW device of this structure is multi-layer film structure, can meet the application demand of high frequency, high electromechanical coupling factor and integrated circuit fields.Piezoelectric layer is easily integrated compared to monocrystalline piezoelectric material when selecting piezoelectric membrane, can be applicable in semi-conductor industry.
Description
Technical field
The present invention relates to SAW device and manufacture field, be specifically related to a kind of High Frequency SAW Device based on Si base and preparation side thereof
Method.
Background technology
With developing rapidly of mobile communication technology, the use frequency of surface acoustic wave (SAW) device improves constantly, from from the beginning of
MHz level GHz level till now.The frequency of SAW device is proportional to the acoustic wave propagation velocity of material, is inversely proportional to interdigital transducer
(IDT) in cycle, the frequency therefore improving SAW device mainly can set about in terms of two, and one is the finger making IDT to thinner
Direction is developed, and two is the material using and having higher SAW spread speed.The method of refinement IDT finger is simply direct, but finger
Refinement also can cause some drawbacks, for example, IDT finger refine to sub-micrometer scale, can bring challenges to photoetching process, cause
Product rate declines, cost up；Meanwhile, IDT finger refinement can cause impedance to increase, thus the power reducing SAW device bears
Ability, this just forces people to be converted to sight find on the material of higher SAW spread speed.
Diamond and DLC are the materials that in material, acoustic wave propagation velocity is the fastest, and they have very high springform
Amount, the beneficially fidelity of sonic transmissions, furthermore, they also have higher thermal conductivity, are conducive to the power improving device to bear
Ability, these advantages all show that they are the ideal candidates materials manufacturing High Frequency SAW Device.But, diamond and DLC
It itself is not piezoelectric, it is impossible to excite SAW, it is impossible to carry out the mutual conversion of electromagnetic wave and surface acoustic wave, it is therefore desirable to
Their upper deposition one lamination conductive films, constitute the SAW device of piezoelectric membrane/diamond or diamond-like.Meanwhile, pressure is used
Conductive film replaces piezo-electric crystal, it is also possible to cost-effective.It can be seen from the above discussion that by diamond film or diamond-film-like
The advantage of high frequency, high-power and low cost can be provided simultaneously with the SAW device of multi-layer film structure of piezoelectric membrane composition.
In order to mutually compatible with integrated circuit technology, diamond or DLC film mostly deposit on si substrates, but
Diamond or DLC film thickness are all in nanometer scale, so that making the surface acoustic wave inspiring, some passes in Si
Broadcast, and the phase velocity of Si is less, have impact on the centre frequency of this sandwich construction SAW device.
Content of the invention
For problem or the deficiency of above-mentioned existence, for solving to draw because of the high i.e. diamond of velocity of sound layer or DLC film thickness
Centre frequency and the theoretical value deviation of the SAW device of the multi-layer film structure rising is too big, the invention provides a kind of based on Si base
High Frequency SAW Device and preparation method thereof.
This High Frequency SAW Device is multi-layer film structure, includes Si base, high velocity of sound layer, piezoelectric layer and interdigital from bottom to up successively
Transducer.
The back side of described Si base is provided with groove, its cross sectional shape be trapezoidal i.e. groove be dovetail groove spatial form be trapezoidal
Post, the corresponding Si base upper and lower surface in two bases of trapezoid cross section, cross section height is i.e. trapezoidal high in Si base thickness；Groove and the high velocity of sound
Layer contact surface is rectangle, contact surface and the i.e. trapezoid cross section of the common edge of trapezoid cross section upper base >=interdigital logarithm × (electrode refers to
Width+finger gap), the post height >=sound aperture of the i.e. trapezoidal column in another limit of rectangle；Fluting direction is sound aperture length direction, entirely
The i.e. interdigital transducer that adapts with interdigital transducer on rectangular contact space of planes is spatially completely covered by the contact surface of groove.
So that the propagation of surface acoustic wave is confined in diamond or DLC film, to improve the center frequency of this device
Rate.
The number of described groove is the number of interdigital transducer, and one_to_one corresponding is arranged；High velocity of sound layer is diamond or class
Diamond thin；Piezoelectric layer is piezoelectric membrane or piezoelectric monocrystal.
Its preparation method comprises the following steps:
Step 1, use CVD grow diamond or DLC film on silica-based, are then passed through CMP planarization, prepare gold
Hard rock or DLC film, thickness is 300-600nm, and roughness is 5-10nm.
Step 2, the piezoelectric layer preparing 100-500nm on the substrate of step 1 preparation.
Preparation method has film deposition techniques, bonding techniques, and film deposition techniques has PLD, rf magnetron sputtering or ECR-
PEMOCVD.Piezoelectric layer is piezoelectric membrane or piezoelectric monocrystal, and piezoelectric membrane has: ZnO, LiNbO3、LiTaO3, AlN, GaN or PMN-
PT, piezoelectric monocrystal has LiNbO3、LiTaO3, quartz or PMN-PT.
Step 3, step 2 preparation substrate two sides utilize photoresist spinner spin coating one layer photoetching glue, utilize light at the back side of Si
Carving technology makes figure, utilizes the wet corrosion technique of Si to make groove at the back side of silicon, then removes photoresist again.Wet corrosion technique
Wet etching liquid be KOH, TMAH or EPW.
Step 4, utilize photoetching technique, prepare making interdigital transducer figure on the piezoelectric layer of substrate in step 3.
Step 5, pass through sputtering method, step 4 prepare substrate on make thickness 1-10nm metallic film.It is then passed through
Glue, forms interdigital transducer.Metallic film material is Au or Al.
Owing to the phase velocity of piezoelectric is relatively low, so piezoelectric simply excites and receives surface acoustic wave, and sound surface
The propagation of ripple is in diamond or DLC, owing to diamond or DLC have very high phase velocity, identical interdigital
In the case of transducer finger beam, the operating frequency of device can be significantly improved.
The SAW device of this structure is multi-layer film structure, can meet high frequency, high electromechanical coupling factor and integrated circuit fields
Application demand.Piezoelectric membrane is easily integrated compared to monocrystalline piezoelectric material, can apply in semi-conductor industry.
In sum, the SAW device structure that the present invention provides can meet high frequency, high electromechanical coupling factor, the sound of small size
The demand of the device application of surface wave.
Brief description
Fig. 1 is interdigital transducer/AlN/ diamond or the SAW device schematic diagram of DLC/Si sandwich construction；
Fig. 2 is the SAW device structural representation of embodiment.
Detailed description of the invention
In order to enable the description that technical scheme is clear and complete, combine accompanying drawing with embodiment and carry out further
Explanation.
A preparation High Frequency SAW Device based on Si base as shown in Figure 2.
Step 1, utilizing CVD growing diamond membrane on the thick Si base of 2mm, film thickness is 500nm, utilizes CMP
Be processed by shot blasting so that it is roughness be 10nm, be then carried out obtain diamond/Si substrate.
Step 2, utilize rf magnetron sputtering at the AlN film that diamond/Si deposition on substrate a layer thickness is 200nm.
Step 3, utilize photoresist spinner at the two sides spin coating one layer photoetching glue of AlN/ diamond/Si, and utilize at the back side of Si
Photoetching process makes figure, and 10% KOH soak 5 minutes, make groove as shown in Figure 2, number of grooves at the back side of Si
Being 2, place, trapezoid cross section limit is 0.6mm, and another limit is equal to a length of 1.2mm of sound aperture, wherein single interdigital transducer
Logarithm be 100, electrode finger beam and finger gap are all 3 μm.
Step 4, utilize photoetching process to make on AlN/ diamond/Si interdigital transducer figure that finger beam is 3 μm.
Step 5, employing DC sputtering prepare the Au film of one layer of 10nm, then remove photoresist, form interdigital transducer, last shape
Become the interdigital transducer/AlN/ diamond/Si sandwich construction of Si back of the body corrosion.
Claims (7)
1. the High Frequency SAW Device based on Si base, is multi-layer film structure, includes Si base, high velocity of sound layer, pressure from bottom to up successively
Electric layer and interdigital transducer, it is characterised in that:
The back side of described Si base is provided with groove, its cross sectional shape be trapezoidal i.e. groove be dovetail groove, spatial form is trapezoidal column,
The corresponding Si base upper and lower surface in two bases of trapezoid cross section, cross section height is i.e. trapezoidal high in Si base thickness；Groove and high velocity of sound layer
Contact surface is rectangle, the upper base >=interdigital logarithm of the i.e. trapezoid cross section of common edge of contact surface and trapezoid cross section × (electrode finger beam+
Finger gap), the post height >=sound aperture of the i.e. trapezoidal column in another limit of rectangle；Fluting direction is sound aperture length direction, whole square
The shape contact surface i.e. interdigital transducer that spatially adapts with interdigital transducer is spatially completely covered by the contact surface of groove.
2. the High Frequency SAW Device based on Si base as claimed in claim 1, it is characterised in that: the number of described groove is interdigital changing
The number of energy device, and one_to_one corresponding setting.
3. the High Frequency SAW Device based on Si base as claimed in claim 1, it is characterised in that: described high velocity of sound layer be diamond or
DLC film.
4. the High Frequency SAW Device based on Si base as claimed in claim 1, it is characterised in that: described piezoelectric layer be piezoelectric membrane or
Piezoelectric monocrystal.
5. the High Frequency SAW Device based on Si base as claimed in claim 1, its preparation method comprises the following steps:
Step 1, use CVD grow diamond or DLC film on silica-based, are then passed through CMP planarization, prepare diamond
Or DLC film, thickness is 300-600nm, and roughness is 5-10nm；
Step 2, the piezoelectric layer preparing 100-500nm on the substrate of step 1 preparation；
Step 3, step 2 preparation substrate two sides utilize photoresist spinner spin coating one layer photoetching glue, utilize photoetching work at the back side of Si
Skill makes figure, utilizes the wet corrosion technique of Si to make groove at the back side of silicon, then removes photoresist again；
Step 4, utilize photoetching technique, prepare making interdigital transducer figure on the piezoelectric layer of substrate in step 3；
Step 5, pass through sputtering method, step 4 prepare substrate on make thickness 1-10nm metallic film, be then passed through removing photoresist,
Form interdigital transducer.
6. the High Frequency SAW Device preparation method based on Si base as claimed in claim 5, it is characterised in that: wet method in described step 3
The wet etching liquid of etching process is KOH, TMAH or EPW.
7. the High Frequency SAW Device preparation method based on Si base as claimed in claim 5, it is characterised in that: metal in described step 5
Thin-film material is Au or Al.
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| CN201610528353.8A CN106160691A (en) | 2016-07-05 | 2016-07-05 | A kind of High Frequency SAW Device based on Si base and preparation method thereof |
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| CN201610528353.8A CN106160691A (en) | 2016-07-05 | 2016-07-05 | A kind of High Frequency SAW Device based on Si base and preparation method thereof |
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| CN201610528353.8A Pending CN106160691A (en) | 2016-07-05 | 2016-07-05 | A kind of High Frequency SAW Device based on Si base and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018095311A1 (en) * | 2016-11-24 | 2018-05-31 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| CN108270413A (en) * | 2017-03-24 | 2018-07-10 | 珠海晶讯聚震科技有限公司 | Filter package element |
| CN111865257A (en) * | 2020-07-02 | 2020-10-30 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN112838838A (en) * | 2020-12-30 | 2021-05-25 | 广东广纳芯科技有限公司 | Surface acoustic wave resonator with single crystal PMNT and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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Application publication date: 20161123 |