CN102373440A - 化学气相沉积装置 - Google Patents

化学气相沉积装置 Download PDF

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CN102373440A
CN102373440A CN2011102342495A CN201110234249A CN102373440A CN 102373440 A CN102373440 A CN 102373440A CN 2011102342495 A CN2011102342495 A CN 2011102342495A CN 201110234249 A CN201110234249 A CN 201110234249A CN 102373440 A CN102373440 A CN 102373440A
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许闰成
朴胜一
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Abstract

本发明公开了一种化学气相沉积装置。该化学气相沉积装置包括：处理室，被配置为用来界定反应空间；背板，放置于所述反应空间上方，并且在该背板的中部具有气体入口；气体扩散构件，设置在该气体入口的下方并且与该气体入口分离，该气体扩散构件被配置为用来扩散通过该气体入口提供的工艺气体，并且该气体扩散元件通过第一耦合构件与该背板耦合；喷头，放置于所述背板和气体扩散构件的下方并且与所述背板和气体扩散构件分离，在该喷头中通过打孔形成有多个喷孔，该喷头的中部通过第二耦合构件与该气体扩散构件耦合；以及基座，设置在该喷头的下方并且与该喷头分离，该基座用于支撑衬底。

Description

化学气相沉积装置
技术领域
本发明涉及一种化学气相沉积装置。
背景技术
在物体上形成薄膜的方法通常可以被分成：物理气相沉积(PVD)方法，其中利用物理碰撞例如溅射来形成薄膜；和化学气相沉积(CVD)方法，其中利用化学反应来形成薄膜。然而，因为PVD方法具有的组成或厚度均匀性以及台阶覆盖率不如CVD方法的好，所以CVD方法更常用。CVD方法包括APCVD(大气压CVD)方法、LPCVD(低压CVD)方法、和PECVD(等离子体增强CVD)方法等。
在CVD方法中，PECVD方法由于其低温沉积和快速形成薄膜的能力近来被广泛采用。PECVD方法是指向注入到反应室中的反应气体施加RF功率以使反应气体成为等离子体状态，并使等离子体中的自由基沉积在晶片或玻璃衬底上的方法。
不管采用哪种方法，薄膜的均匀沉积是薄膜沉积工艺的最关键，从而为此提议了大量的改进思路。对于薄膜的均匀沉积来说，反应气体或等离子体的均匀分布起着很重要的作用。
PECVD装置是薄膜沉积工艺中不可缺少的装备，PECVD装置的规模由于需要的产量规模的增大而逐渐增大。例如，在近来用来制造平面屏幕显示装置的工艺中使用的PECVD装置超大，一边的尺寸很容易超过2米，因此为了获得期望质量的薄膜，需要将它的具体功能配置得更精确。为了使用于制造大表面薄膜的PECVD装置内薄膜的厚度均匀，本发明提出了用于改进喷射气体的功能并且使由气体喷射表面的热膨胀所引起的弯曲现象最小化的概念。
图1示出常见PECVD装置的简要结构，下面参照图1描述了使用PECVD装置的工艺。
首先，一旦通过机械手(未示出)将衬底3安全地接收在安装在反应室1内的基座2的上表面上之后，用于薄膜工艺的气体就通过气体入口管7进入位于喷头4上方的缓冲空间5中，并在所述缓冲空间5中扩散。扩散到缓冲空间5中的气体通过喷头4的喷嘴4a均匀地喷射到衬底3上，并且通过经等离子体电极6提供的RF(射频)功率将喷射的气体转换成等离子体8的状态。等离子体8的状态下的反应气体沉积到衬底3上，并且通过真空泵(未示出)经出口管9排放在完成薄膜沉积工艺之后剩余的任何反应气体。
然而，如图2所示，PECVD装置中的喷头4由于其自身的重量和热变形而具有在中部下陷的问题。热变形是由于来自高温等离子体和安装在基座2中的加热器(未示出)的热传递引起的热膨胀而导致的，并且热膨胀在水平方向比在垂直(厚度)方向上大。
当喷头4的中部下陷从而弯曲时，喷头4与基座2之间的距离在中部比在***区域要近，使得喷射气体的分布密度不均匀并且使工艺均匀性变差。
发明内容
本发明旨在提供一种化学气相沉积装置，该化学气相沉积装置能够使工艺气体平稳地流动并且能够使喷头的热膨胀变形最小化。
根据本发明的一个方面，提供一种化学气相沉积装置，可包括：处理室，被配置为用来界定反应空间；背板，放置于所述反应空间上方，并且在该背板的中部具有气体入口；气体扩散构件，设置在该气体入口的下方并且与该气体入口分离，该气体扩散构件被配置为用来扩散通过该气体入口提供的工艺气体，并且该气体扩散元件通过第一耦合构件与该背板耦合；喷头，放置于所述背板和气体扩散构件的下方并且与所述背板和气体扩散构件分离，在该喷头中通过打孔形成有多个喷孔，该喷头的中部通过第二耦合构件与该气体扩散构件耦合；以及基座，设置在该喷头的下方并且与该喷头分离，该基座用于支撑衬底。
优选地，所述第一耦合构件和第二耦合构件的至少其中之一可以是螺钉。
优选地，该背板的下端部具有形成在其中的膨胀腔，该气体扩散构件的一部分或全部可放置在该膨胀腔内部，该膨胀腔具有比该气体入口大的横截面面积。
优选地，该处理室可具有六面体形状，该气体扩散构件可包括盘形的支撑板和形成在该支撑板的上表面上的四角锥，该四角锥的每一个侧面可面对该处理室的角。该第一耦合构件可放置于线性路径上，该线性路径从该四角锥的中心穿过该四角锥的角。
优选地，该气体扩散构件可包括矩形板形状的支撑板和形成在该支撑板的上表面上的锥体，该支撑板的每一个侧边可面对该处理室的角。该第一耦合构件可放置于线性路径上，该线性路径从该锥体的中心穿过该支撑板的角。可在该基座内部安装热丝，该喷头可由铝制成。
优选地，该装置还可包括夹紧构件，该夹紧构件通过第三耦合构件与该背板耦合以支撑该喷头的边缘，其中在该喷头的侧面与该夹紧构件之间可形成预定间隙。该夹紧构件可包括用于支撑该喷头的下表面的水平部分和用于支撑该喷头的侧面的垂直部分，并且该喷头的边缘的下部可形成有用于与该夹紧构件的水平部分啮合的沟槽。
优选地，该装置还可包括插在该夹紧构件和该背板之间的热阻构件，该热阻构件的一侧可与该背板的下表面接触，并且该热阻构件的另一侧可与该喷头的上表面接触。该热阻构件可以是薄金属板。
优选地，该喷头可具有在其边缘形成的椭圆形长孔，并且第四耦合构件可通过穿透该夹紧构件的水平部分而***到该长孔中。
优选地，在该喷头具有矩形板形状的情况下，所述夹紧构件、椭圆形长孔和第四耦合构件可设置在该喷头的每一个侧面上。此外，所述长孔和第四耦合构件可成对地设置在该喷头的每一个侧面上。
采用本发明的优选实施方式，可以最小化喷头的热膨胀变形，从而可以获得具有优良质量的均匀大面积薄膜。
附图说明
图1示出根据常规技术的PECVD装置。
图2示出根据常规技术的喷头的弯曲现象。
图3是示出根据本发明实施方式的化学气相沉积装置的剖视图。
图4是图3中用“A”标记的部分的放大图。
图5是图3中用“B”标记的部分的放大图。
图6是喷头的顶视图，在所述喷头中形成有多个长孔。
图7示出通过气体入口流进真空容器中的工艺气体如何在根据常规技术的PECVD装置中扩散。
图8是示出根据本发明实施方式的气体扩散构件的立体图。
图9示出通过气体入口流入真空容器中的工艺气体如何在应用了图8的气体扩散构件的PECVD装置中扩散。
图10是根据本发明另一个实施方式的气体扩散构件的立体图。
图11示出通过气体入口流入真空容器中的工艺气体如何在应用了图10的气体扩散构件的PECVD装置中扩散。
附图标记说明：
100：处理室
110：室主体
120：上盖
150：反应空间
200：背板
210：气体入口
220：缓冲空间
230：膨胀腔
250：第一耦合构件
300A、300B：气体扩散构件
400：喷头
410：喷孔
450：第二耦合构件
460：长孔
500：基座
600：夹紧构件
610：水平部分
620：垂直部分
650：第三耦合构件
670：第四耦合构件
700：热阻构件
800：衬底
具体实施方式
由于本发明可以有多种改变和实施方式，所以将参照附图阐述和描述多个具体的实施方式。然而这决不是要将本发明限制于特定的实施方式，而是应该理解为本发明包括由本发明的概念和范围所涵盖的所有的改变、等效物和替代物。在对本发明的整个描述中，当确定对某种技术的描述会回避本发明的要点时，将省略相关的详细描述。
术语诸如“第一”和“第二”可以用来描述不同的元件，但是上述元件不应限于上述术语。上述术语仅用来将一个元件与其它元件区别开来。
说明书中使用的术语仅用来描述具体的实施方式，而决不是用来限制本发明。除非清楚地使用，单数形式的表述包括多数形式的意思。在本说明书中，诸如“包括”或“包含”的描述意在指定特性、数量、步骤、操作、元件、部件或其组合，而不应解释为排除一个或多个其它特性、数量、步骤、操作、元件、部件或其组合的任何存在或可能性。
下面将参照附图详细地描述根据本发明的化学气相沉积装置的具体优选实施方式。在整个附图中，相同或相应的元件将赋予相同的参考标号，对相同或相应元件的任何多余描述将会省略。
图3是示出根据本发明实施方式的PECVD装置的剖视图。图4是图3中用“A”标记的部分的放大图，图5是图3中用“B”标记的部分的放大图。图3到5中示出了处理室100、反应空间150、背板200、气体入口210、第一耦合构件250、气体扩散构件300、喷头400、喷孔410、第二耦合构件450、长孔460、基座500、夹紧构件600、第三耦合构件650、第四耦合构件670、热阻构件700和衬底800。
如图3所示，根据本发明实施方式的CVD装置包括：处理室100，界定反应空间150；背板200，放置于反应空间150上方，且在其中部具有气体入口210；气体扩散构件300，设置在气体入口210下方并与气体入口210分离，被配置为用于扩散通过气体入口流入的工艺气体；喷头400，放置于背板200和气体扩散构件300下方并与背板200和气体扩散构件300分离，且在其中通过打孔形成多个喷孔410；和基座500，设置在喷头400下方并与喷头400分离，且支撑衬底800。
气体扩散构件300通过第一耦合构件250与背板200耦合，喷头400的中部通过第二耦合构件450与气体扩散构件300耦合。换句话说，喷头400的中部经由气体扩散构件300与背板200耦合。根据具有这种结构的本实施方式，可以解决喷头400的中部由于热膨胀而下陷的问题。
更具体地说，如图4所示，在气体扩散构件300与背板200分离预定距离的同时，气体扩散构件300通过第一耦合构件250(诸如穿透气体扩散构件300的边缘的螺钉)与背板200耦合。而且，在气体扩散构件300与喷头400分离预定距离的同时，气体扩散构件300通过诸如螺钉的第二耦合构件450与喷头400耦合。这里，可以通过穿透喷头400将第二耦合构件的端部***到气体扩散构件的中部。
虽然本实施方式提出了将螺钉用于第一耦合构件和第二耦合构件，但是本发明不限于本实施方式中所提出的方案，只要气体扩散构件可以在与背板200和喷头400分离的同时被紧固，就可以使用任何构件(例如销)。
处理室100界定处于真空状态的反应空间150。处理室100主要划分为上盖120和室主体110，将密封构件(未示出)诸如O形圈插在其间以将处理室100内的反应空间150相对于外部密封。
背板200位于反应空间150的上侧，更具体地说，位于上盖120所界定的空间中。背板200可以由金属诸如铝制成，并且用于注入工艺气体的气体入口210设置在背板200的中部。气体入口210可以是穿透背板200的孔或***在该孔中的管。由外部气体源(未示出)提供的工艺气体可以通过气体入口210注入到背板200下方。
用于扩散所提供的工艺气体的气体扩散构件300位于背板200下方，更具体地，位于设置在背板200中的气体入口210下方，如图4所示。如上所述，在气体扩散构件300通过第一耦合构件250与背板200分离的同时，气体扩散构件300被固定。
气体扩散构件300用于在处理室100内部，更具体地说，在背板200和喷头400之间的空间200(下文称为“缓冲空间”)中，有效地扩散注入的工艺气体。为此，注入的工艺气体具有层流(laminar flow)很重要。下文将描述气体扩散空间300的具体形状和功能。
如图4所述，具有比气体入口210大的横截面面积的膨胀腔230可以形成在背板200的下端部，一部分或全部的气体扩散构件300可以放置于膨胀腔230内部。这里，膨胀腔230和气体扩散构件300可以具有类似的形状。
喷头400以与背板200和气体扩散构件300分离的方式设置在背板200和气体扩散构件300的下方。喷头400是用于扩散注入的工艺气体并且均匀地将工艺气体喷射到衬底的整个表面上(其中所述衬底放置在基座500上)的装置，并可以具有与处理室100的横截面形状相似的形状。例如，如果处理室100具有六面体形状并且从而具有矩形的横截面形状，喷头400就可以具有矩形板的形状。喷头400还可以具有在由金属诸如铝制成的板形主体中均匀打孔形成的喷孔410。这里，喷孔410可以具有锥体的形状，其横截面面积朝着其下侧逐渐变大。
由于上述结构，注入的工艺气体首先通过形成在背板200下方的气体扩散构件300扩散，然后通过喷头400二次扩散，从而可被均匀喷射到衬底800(其中衬底800容置在基座500的上表面上)的上表面上。
这里，RF源900与背板200和喷头400连接，并提供用以激励喷射的工艺气体所需要的能量，以将通过喷头400喷射的工艺气体转换成等离子体。换句话说，背板200和喷头400可以用作上电极。
由于处理室100，更具体地，上盖120起到接地的作用，如图5所示，绝缘体160、170、180插在用作上电极的背板和喷头与上盖120之间，保持它们之间的电绝缘。这里，O形圈190设置于绝缘体160的预定位置处，以便于维持反应空间150的真空状态。
在晶体硅太阳能电池的制造工艺中，主要使用硅氮化物(SiNx)膜作为抗反射膜；为了形成这种抗反射膜，可以通过注入SiH4和NH3作为工艺气体来执行上述工艺。
如图5所示，可以通过夹紧构件600支撑喷头400的边缘，其中夹紧构件600包括用于支撑喷头400的下表面的水平部分610和用于支撑喷头400的侧表面的垂直部分620。这里，喷头400的下部可以形成有用于与所述夹紧构件的下部(即水平部分610)啮合的沟槽430。
夹紧构件600，例如夹紧构件600的垂直部分620可以通过第三耦合构件650与背板200耦合，并且夹紧构件600的水平部分610可以通过与喷头400的下表面啮合而支撑喷头400的下表面。
可以在喷头400的侧面和夹紧构件600之间形成预定间隙420。这个间隙420是考虑到喷头400的热膨胀而形成的。
在喷头400的边缘中形成椭圆形的长孔460，并且第四耦合构件670可以通过穿透夹紧构件600的水平部分而***到长孔460中。第四耦合构件670是用于通过将夹紧构件600与喷头400耦合来支撑喷头400的边缘的装置。应该理解的是，各种耦合装置，诸如螺钉、销等都可以用于第四耦合构件670。
如图6所示，喷头400具有形成在其中的多个长孔460。通过形成这些长孔460，尽管喷头400有热膨胀，也可以避免由于第四耦合构件670的存在而使过大的应力施加在喷头400上。这是因为长孔460中的额外空间可以用作考虑到喷头400的热膨胀而预留的空间。
如果喷头400为矩形板的形状，夹紧构件600、椭圆形长孔460和第四耦合构件670可以设置在喷头400的每一个侧面上。换句话说，通过在喷头400的每一个侧面上形成夹紧构件600和第四耦合构件670，可以更牢固地支撑喷头400的边缘。
如图6所示，长孔460和第四耦合构件670成对地设置在喷头400的每一个侧面上，从而能够更牢固地支撑喷头。
而且，可以在夹紧构件600和背板200之间***热阻构件700。如图5所示，热阻构件700的一侧与背板200的下表面接触，热阻构件700的另一侧与喷头400的上表面接触，从而使热阻构件700可以在喷头400和背板200之间的热传递中起到阻力的作用。由于热阻构件700所起的作用，可以减少从喷头400传递到背板200上的热。由诸如铝的材料制成的薄金属板可以用于热阻构件700。热阻构件700的厚度可以在约1.5mm到3.0mm之间。
基座500(在基座500上容置衬底800)以与喷头400分离的方式放置于喷头400下方。可以在基座500内部放置加热器510(例如热丝)，在这种情况下，在基座500上容置的衬底800可以被加热到适于在薄膜沉积工艺期间沉积的温度(例如400℃)。而且，基座500电接地，从而可以用作下电极，并且可以通过用于装载和卸载衬底800的单独的升降装置520来提升或降低基座500。
可以在处理室100的下方，更具体地说，在基座500下方，设置排气出口130，使得剩余在处理室100内部的工艺气体可以在沉积反应完成之后排放到外部。
下面将更详细地描述前面描述的气体扩散构件300的形状和功能。图7示出通过气体入口210流进处理室(更具体地说是缓冲空间220)中的工艺气体如何在常规的PECVD装置中扩散。其中，箭头表示扩散的工艺气体。
为了在衬底800上形成均匀的薄膜，在整个衬底800上均匀地提供工艺气体很重要。为此，需要使通过气体入口210提供到喷头400的上侧的工艺气体在整个喷头400中均匀分布。然而，如图7所示，根据常规的技术，具有六面体形状的处理室100的角区域102位于距处于处理室100中部的气体入口210较远的距离处，这限制了工艺气体在整个处理室100中均匀分布。
考虑到上述事实，本发明实施方式采用气体扩散构件300A，气体扩散构件300A包括矩形板形状的支撑板310A和形成在支撑板310A的上表面上(优选为上表面的中部)的锥体320A。这里，将支撑板310A的每一个侧边312A设置为面对处理室100的每一个角102。
如图9所示，通过使用这种气体扩散构件300A，经气体入口210提供的工艺气体沿锥体320A的侧表面在所有方向上下降，然后沿支撑板310A的上表面移动。由于支撑板310A的上表面起到抵抗工艺气体移动的阻力的作用，工艺气体可以在离中心相对较近(即，具有较小的阻力)的支撑板310A的侧边312A的方向上平滑地流动，并且工艺气体不会在离中心相对较远(即，具有较大的阻力)的支撑板310A的角314A的方向上平滑地流动。
这里，如图9所示，通过在从锥体320A的中心穿过支撑板310A的角314A的线性路径上设置第一耦合构件250，第一耦合构件250起到抵抗工艺气体移动的阻力的作用，这能够使工艺气体在支撑板310A的侧边312A的方向上更加平滑地流动。这样，通过改变气体扩散构件的形状，使工艺气体在相对较远的处理室100的角102的方向上更平滑地流动，可以补偿用于处理室100的角102的工艺气体，由此提高了处理室100中工艺气体的整体均匀性。
在另一个实施方式中，如图10所示，可以使用包括盘形的支撑板310B和在支撑板310B的上表面上形成的四角锥320B的气体扩散构件300B。这里，四角锥320B的每一个侧面322B面对处理室100的每一个角102。
在本实施方式中，四角锥320B的角区域324B起到阻碍工艺气体流动的阻力的作用，从而如图11所示，通过使四角锥320B的侧面322B(在所述侧面322B上工艺气体相对更加平滑地流动)面对处理室100的角102，可以补偿用于处理室100的角102的工艺气体。
这里，如图11所示，通过在从四角锥320B的中心穿过四角锥320B的角324B的线性路径上放置第一耦合构件250，第一耦合构件250起到抵抗工艺气体移动的阻力的作用，由此能够使工艺气体在处理室100的角102的方向上更加平滑地流动。
虽然描述了本发明的具体优选实施方式，但是应该理解，在不偏离本发明的技术概念和范围的情况下，本发明所属领域的技术人员可以对本发明进行各种修改和变形。
还应该理解的是，在本发明的权利要求中可以存在除了上述实施方式之外的其它实施方式。

Claims (17)

1.一种化学气相沉积装置，包括：
处理室，被配置为用来界定反应空间；
背板，放置于所述反应空间上方，并且在该背板的中部具有气体入口；
气体扩散构件，设置在该气体入口的下方并且与该气体入口分离，该气体扩散构件被配置为用来扩散通过该气体入口提供的工艺气体，并且该气体扩散元件通过第一耦合构件与该背板耦合；
喷头，放置于所述背板和气体扩散构件的下方并且与所述背板和气体扩散构件分离，在该喷头中通过打孔形成有多个喷孔，该喷头的中部通过第二耦合构件与该气体扩散构件耦合；以及
基座，设置在该喷头的下方并且与该喷头分离，该基座用于支撑衬底。
2.如权利要求1所述的装置，其中所述第一耦合构件和第二耦合构件的至少其中之一是螺钉。
3.如权利要求1所述的装置，其中该背板的下端部具有形成在其中的膨胀腔，该气体扩散构件的一部分或全部放置在该膨胀腔内部，该膨胀腔具有比该气体入口大的横截面面积。
4.如权利要求1所述的装置，其中该处理室具有六面体形状，
其中该气体扩散构件包括盘形的支撑板和形成在该支撑板的上表面上的四角锥，以及
其中该四角锥的每一个侧面面对该处理室的角。
5.如权利要求4所述的装置，其中该第一耦合构件放置于线性路径上，该线性路径从该四角锥的中心穿过该四角锥的角。
6.如权利要求1所述的装置，其中该处理室具有六面体形状，
其中该气体扩散构件包括矩形板形状的支撑板和形成在该支撑板的上表面上的锥体，以及
其中该支撑板的每一个侧边面对该处理室的角。
7.如权利要求6所述的装置，其中该第一耦合构件放置于线性路径上，该线性路径从该锥体的中心穿过该支撑板的角。
8.如权利要求1所述的装置，其中在该基座内部安装有热丝。
9.如权利要求1所述的装置，其中该喷头由铝制成。
10.如权利要求1所述的装置，还包括夹紧构件，该夹紧构件通过第三耦合构件与该背板耦合以支撑该喷头的边缘，其中在该喷头的侧面与该夹紧构件之间形成预定间隙。
11.如权利要求10所述的装置，还包括插在该夹紧构件和该背板之间的热阻构件，该热阻构件的一侧与该背板的下表面接触，并且该热阻构件的另一侧与该喷头的上表面接触。
12.如权利要求10所述的装置，其中该夹紧构件包括用于支撑该喷头的下表面的水平部分和用于支撑该喷头的侧面的垂直部分，
其中该喷头的边缘的下部形成有用于与该夹紧构件的水平部分啮合的沟槽。
13.如权利要求12所述的装置，其中该热阻构件是薄金属板。
14.如权利要求13所述的装置，其中该热阻构件由铝制成。
15.如权利要求12所述的装置，其中该喷头具有在其边缘形成的椭圆形长孔，并且
该装置还包括通过穿透该夹紧构件的水平部分而***到该长孔中的第四耦合构件。
16.如权利要求15所述的装置，其中该喷头具有矩形板形状，以及
其中所述夹紧构件、椭圆形长孔和第四耦合构件设置在该喷头的每一个侧面上。
17.如权利要求16所述的装置，其中所述长孔和第四耦合构件成对地设置在该喷头的每一个侧面上。
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