CN102301465B - 贯穿衬底的通路 - Google Patents
贯穿衬底的通路 Download PDFInfo
- Publication number
- CN102301465B CN102301465B CN201080005862.3A CN201080005862A CN102301465B CN 102301465 B CN102301465 B CN 102301465B CN 201080005862 A CN201080005862 A CN 201080005862A CN 102301465 B CN102301465 B CN 102301465B
- Authority
- CN
- China
- Prior art keywords
- metal
- groove
- substrate
- hole
- coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/432,243 | 2009-04-29 | ||
US12/432,243 US8263492B2 (en) | 2009-04-29 | 2009-04-29 | Through substrate vias |
PCT/EP2010/055867 WO2010125164A1 (en) | 2009-04-29 | 2010-04-29 | Through substrate vias |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102301465A CN102301465A (zh) | 2011-12-28 |
CN102301465B true CN102301465B (zh) | 2014-12-24 |
Family
ID=42227740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080005862.3A Expired - Fee Related CN102301465B (zh) | 2009-04-29 | 2010-04-29 | 贯穿衬底的通路 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8263492B2 (zh) |
EP (1) | EP2436031B1 (zh) |
JP (1) | JP5682897B2 (zh) |
CN (1) | CN102301465B (zh) |
WO (1) | WO2010125164A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263492B2 (en) * | 2009-04-29 | 2012-09-11 | International Business Machines Corporation | Through substrate vias |
FR2953992B1 (fr) * | 2009-12-15 | 2012-05-18 | Commissariat Energie Atomique | Realisation de structures d'interconnexions tsv formees d'un contour isolant et d'une zone conductrice situee dans le contour et disjointe du contour |
JP5600427B2 (ja) * | 2009-12-25 | 2014-10-01 | 株式会社フジクラ | 貫通配線基板の材料基板 |
KR20120052734A (ko) * | 2010-11-16 | 2012-05-24 | 삼성전자주식회사 | 반도체 칩 및 반도체 칩의 형성 방법 |
US8654541B2 (en) | 2011-03-24 | 2014-02-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Three-dimensional power electronics packages |
US9257525B2 (en) | 2011-05-13 | 2016-02-09 | Intersil Americas LLC | Systems and methods for forming isolated devices in a handle wafer |
KR101934864B1 (ko) * | 2012-05-30 | 2019-03-18 | 삼성전자주식회사 | 관통 실리콘 비아 구조물 및 그 제조 방법, 이를 포함하는 이미지 센서 및 그 제조 방법 |
US8932956B2 (en) | 2012-12-04 | 2015-01-13 | International Business Machines Corporation | Far back end of the line stack encapsulation |
US9070741B2 (en) | 2012-12-17 | 2015-06-30 | Infineon Technologies Austria Ag | Method of manufacturing a semiconductor device and a semiconductor workpiece |
US8668835B1 (en) | 2013-01-23 | 2014-03-11 | Lam Research Corporation | Method of etching self-aligned vias and trenches in a multi-layer film stack |
US8906810B2 (en) | 2013-05-07 | 2014-12-09 | Lam Research Corporation | Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization |
TWI560758B (en) * | 2014-10-20 | 2016-12-01 | Niko Semiconductor Co Ltd | Manufacturing method of wafer level chip scale package structure |
WO2020024282A1 (zh) * | 2018-08-03 | 2020-02-06 | 长江存储科技有限责任公司 | 存储器结构及其形成方法 |
CN108062181B (zh) | 2018-01-02 | 2021-08-17 | 京东方科技集团股份有限公司 | 基板及其制作方法、电子设备 |
JP2019145737A (ja) * | 2018-02-23 | 2019-08-29 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
CN109860098B (zh) * | 2019-01-07 | 2021-04-13 | 中国科学院微电子研究所 | 一种soi器件结构及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7241641B2 (en) * | 2003-12-17 | 2007-07-10 | Tru-Si Technologies, Inc. | Attachment of integrated circuit structures and other substrates to substrates with vias |
CN101217118A (zh) * | 2007-01-05 | 2008-07-09 | 国际商业机器公司 | 用于制造具有导电通孔的硅载体的方法及其制造的半导体 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835898B2 (en) * | 1993-11-16 | 2004-12-28 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US6239485B1 (en) * | 1998-11-13 | 2001-05-29 | Fujitsu Limited | Reduced cross-talk noise high density signal interposer with power and ground wrap |
US6322903B1 (en) * | 1999-12-06 | 2001-11-27 | Tru-Si Technologies, Inc. | Package of integrated circuits and vertical integration |
US6498381B2 (en) * | 2001-02-22 | 2002-12-24 | Tru-Si Technologies, Inc. | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
DE10205026C1 (de) | 2002-02-07 | 2003-05-28 | Bosch Gmbh Robert | Halbleitersubstrat mit einem elektrisch isolierten Bereich, insbesondere zur Vertikalintegration |
WO2005031861A1 (en) * | 2003-09-26 | 2005-04-07 | Tessera, Inc. | Structure and method of making capped chips including a flowable conductive medium |
US7060601B2 (en) * | 2003-12-17 | 2006-06-13 | Tru-Si Technologies, Inc. | Packaging substrates for integrated circuits and soldering methods |
JP4439976B2 (ja) * | 2004-03-31 | 2010-03-24 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP1883956A4 (en) * | 2005-05-18 | 2011-03-23 | Kolo Technologies Inc | BY-THE-WAFER CONNECTION |
US7317256B2 (en) * | 2005-06-01 | 2008-01-08 | Intel Corporation | Electronic packaging including die with through silicon via |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7488680B2 (en) * | 2005-08-30 | 2009-02-10 | International Business Machines Corporation | Conductive through via process for electronic device carriers |
US7633167B2 (en) * | 2005-09-29 | 2009-12-15 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
US7989915B2 (en) * | 2006-07-11 | 2011-08-02 | Teledyne Licensing, Llc | Vertical electrical device |
US20080079150A1 (en) * | 2006-09-28 | 2008-04-03 | Juergen Simon | Die arrangement and method for producing a die arrangement |
JP5563186B2 (ja) * | 2007-03-30 | 2014-07-30 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
KR101341586B1 (ko) * | 2007-08-30 | 2013-12-16 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 이의 제조 방법 |
JP5593228B2 (ja) | 2007-10-15 | 2014-09-17 | アイメック | 電気的相互接続の製作方法、及び該方法で製作されたデバイス |
JP2009124087A (ja) * | 2007-11-19 | 2009-06-04 | Oki Semiconductor Co Ltd | 半導体装置の製造方法 |
JP2009181981A (ja) * | 2008-01-29 | 2009-08-13 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US8263492B2 (en) | 2009-04-29 | 2012-09-11 | International Business Machines Corporation | Through substrate vias |
-
2009
- 2009-04-29 US US12/432,243 patent/US8263492B2/en active Active
-
2010
- 2010-04-29 WO PCT/EP2010/055867 patent/WO2010125164A1/en active Application Filing
- 2010-04-29 JP JP2012507773A patent/JP5682897B2/ja not_active Expired - Fee Related
- 2010-04-29 EP EP10716541.7A patent/EP2436031B1/en not_active Not-in-force
- 2010-04-29 CN CN201080005862.3A patent/CN102301465B/zh not_active Expired - Fee Related
-
2012
- 2012-05-10 US US13/468,609 patent/US8796138B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7241641B2 (en) * | 2003-12-17 | 2007-07-10 | Tru-Si Technologies, Inc. | Attachment of integrated circuit structures and other substrates to substrates with vias |
CN101217118A (zh) * | 2007-01-05 | 2008-07-09 | 国际商业机器公司 | 用于制造具有导电通孔的硅载体的方法及其制造的半导体 |
Also Published As
Publication number | Publication date |
---|---|
US8796138B2 (en) | 2014-08-05 |
EP2436031B1 (en) | 2013-09-25 |
CN102301465A (zh) | 2011-12-28 |
JP2012525696A (ja) | 2012-10-22 |
JP5682897B2 (ja) | 2015-03-11 |
EP2436031A1 (en) | 2012-04-04 |
US20120217651A1 (en) | 2012-08-30 |
WO2010125164A1 (en) | 2010-11-04 |
US20100276786A1 (en) | 2010-11-04 |
US8263492B2 (en) | 2012-09-11 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170119 Address after: Cayman Islands Grand Cayman Patentee after: INTERNATIONAL BUSINESS MACHINES Corp. Address before: American New York Patentee before: Globalfoundries second American LLC Effective date of registration: 20170119 Address after: American New York Patentee after: Globalfoundries second American LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180328 Address after: Ontario, Canada Patentee after: International Business Machines Corp. Address before: Cayman Islands Grand Cayman Patentee before: INTERNATIONAL BUSINESS MACHINES Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141224 Termination date: 20210429 |