CN102251275B - Single-crystal furnace thermal field device capable of measuring distance between fused silicon liquid surface and guide cylinder - Google Patents
Single-crystal furnace thermal field device capable of measuring distance between fused silicon liquid surface and guide cylinder Download PDFInfo
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- CN102251275B CN102251275B CN 201110190583 CN201110190583A CN102251275B CN 102251275 B CN102251275 B CN 102251275B CN 201110190583 CN201110190583 CN 201110190583 CN 201110190583 A CN201110190583 A CN 201110190583A CN 102251275 B CN102251275 B CN 102251275B
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Abstract
The invention relates to thermal field structure technique in a straight-pull silicon single crystal furnace, and aims to provide a single-crystal furnace thermal field device capable of measuring distance between a fused silicon liquid surface and a guide cylinder. The lower edge of an inner guide cylinder or outer guide cylinder of the device is provided with a through hole; a quartz rod is movably installed in the through hole; and by the position change of the quartz rod relative to the through hole, the quartz rod has the following two states: (1) the tail end of the lower part of the quartz rod perpendicularly extends downwards out of the lower edge of the inner guide cylinder or outer guide cylinder so as to serve as a scale for measuring the distance; or (2) the tail end of the lower part of the quartz rod retracts to above the lowest edge of the inner guide cylinder and outer guide cylinder so that the single-crystal furnace thermal field device can move conveniently. By using the invention, the distance between the fused silicon liquid surface and the guide cylinder can be visually measured without the judgment of the operator by experience; the position of the fused liquid surface can be monitored in real time, thereby providing reference for the operator to control the position of the liquid surface; and by the aid of the retractable or rotary design, the quartz rod can not be easily damaged in the operation process.
Description
Technical field
The present invention relates to the thermal field structure technology in the vertical pulling silicon single crystal stove, particularly a kind of thermal field of single crystal furnace device that can measure distance between fusion silicon liquid level and the guide shell.
Background technology
In Straight pull monocrystalline silicon production process, the whole growth flow process is all finished in thermal field of single crystal furnace.Require thermal field to keep the heat exchange environment of a stable and controllable, scatter and disappear in order to heat of crystallization and the heat beyond system of emitting in the balance silicon monocrystal growth process, and provide and meet the required thermograde of silicon monocrystal growth, constantly regularly arranged on the solid-liquid interface of single crystal growing to guarantee Siliciumatom, and do not produce new nucleus.The thermograde of each point is all inequality in the thermal field, and when having only melted silicon and single crystal growing interface to be in to have in the thermal field in the zone of the thermograde that satisfies silicon monocrystal growth, silicon single crystal could normal growth.In addition, to constantly produce the impurity that is mainly silicon monoxide owing to melt the chemical reaction of silicon and gases such as quartz crucible, molten silicon and the interior minor amounts of oxygen of stove in the silicon monocrystal growth process, if these impurity enter the regularly arranged process that Siliciumatom can be destroyed in the single crystal growing interface, interrupt the growth of single crystal.Therefore, impurity must be rapidly outside fusion silicon liquid level evaporation and discharge thermal field.In the growth technique of vertical pulling silicon single crystal, usually constantly the guide shell from thermal field charges into argon gas, and allows argon gas stream cross gap between fusion silicon liquid level and the guide shell, last under the effect of vacuum pump the venting port from thermal field discharge.Therefore the spacing size between fusion silicon liquid level and the guide shell has very big influence for the factor that evaporation, silicon rod rotational stabilization and the silicon rod oxygen level etc. of the flowing of argon gas, impurity are related to single crystal growing and quality.And because the guide shell position is fixed, if determined the spacing of fusion silicon liquid level and guide shell, just determined melted silicon and the growth interface position in thermal field in thermal field, also namely determined the thermograde of melted silicon and growth interface present position.
Traditional thermal field structure can't directly be judged the spacing of fusion silicon liquid level and guide shell, can only be by the mode of range estimation, and its error is big, poor repeatability, human factor accounts for leading.For modern mass automatic production, adopt traditional range estimation mode, limited process consistency and the production efficiency of silicon monocrystal growth.
In sum, invent a kind of thermal field device of the spacing that can measure fusion silicon liquid level and guide shell easily for stable silicon single crystal growing environment, improve the crystal forming rate of vertical pulling silicon single crystal growing, the efficient that improves the production of mass-producing silicon single-crystal has very important significance.
Summary of the invention
The technical problem to be solved in the present invention is that a kind of thermal field device that can measure the spacing of fusion silicon liquid level and guide shell easily is provided.Thermal field device by this invention indication is for the measurement of the spacing of fusion silicon liquid level and guide shell, helps in the silicon monocrystal growth process this spacing of control in real time.Can guarantee unobstructed air-flow, stable thermograde, crystal forming rate and the production efficiency of raising silicon monocrystal growth.
Be the technical solution problem, solution provided by the invention is:
A kind of thermal field of single crystal furnace device that can measure fusion silicon liquid level and guide shell spacing is provided, be provided for guiding inner draft tube and the external flow guiding cylinder of shielding gas in the hole in the middle of the following insulation cover of silicon monocrystalline furnace thermal field, inner draft tube joins respectively with the lower edge of external flow guiding cylinder with upper edge, the inner draft tube of external flow guiding cylinder and forms the closed edge that contacts; Place, lower edge at inner draft tube or external flow guiding cylinder arranges through hole, quartz pushrod of movable installation in the through hole, this quartz pushrod can possess following two states with respect to the change in location of through hole: the lower end of (1) quartz pushrod is stretched out the lower edge of inner draft tube or external flow guiding cylinder vertically downward with the scale as measuring distance; Or the lower end of (2) quartz pushrod is retracted on the lower edge of inner draft tube or external flow guiding cylinder so that the movement of thermal field of single crystal furnace device.
As a kind of improvement, described quartz pushrod is linear pattern, and its termination, top is T-shaped; Described through hole is opened in the lower surface of external flow guiding cylinder lower edge, quartz pushrod with T shape termination as the stopper that moves down; Quartz pushrod has enough distances between inner draft tube and the external flow guiding cylinder so that can enter between the two cavity to top offset.
As a kind of improvement, described quartz pushrod is L-shaped, and forming L shaped one section is canned paragraph, and another section is measuring section; Described through hole is opened on the sidewall of inner draft tube lower edge; The canned paragraph of quartz pushrod is movably installed in this through hole, and measuring section can be that horizontal axis of rotation rotates at perpendicular with this canned paragraph.
As a kind of improvement, described through hole is " one " font long through-hole, and the termination that is movably installed in the quartz pushrod canned paragraph in the through hole has the salient that is oppositely arranged up and down; The existence of this salient makes the termination of canned paragraph can not skid off through hole when measuring section is vertical state, and can only could pass in and out from through hole when measuring section is the level of state.
As a kind of improvement, the measuring section of described quartz pushrod can be that horizontal axis of rotation is done 360 ° of rotations at perpendicular with the canned paragraph.
As a kind of improvement, the hole in the middle of the described down insulation cover is circular hole, the upper edge of described inner draft tube and external flow guiding cylinder, inner draft tube and the lower edge of external flow guiding cylinder join respectively form closure the edge that contacts be annular.
As a kind of improvement, closely be connected ringwise between described external flow guiding cylinder and the following insulation cover.
The present invention compares with background technology, and the useful effect that has is:
(1) can measure the spacing of melted silicon face and guide shell intuitively, not need the operator to judge by rule of thumb;
(2) by the vitreous silica rod, can monitor liquation face position in real time, for the operator provides control liquid level position foundation;
(3) design scalable or rotation makes quartz pushrod not fragile in operating process.
Description of drawings
Fig. 1 is the assembling synoptic diagram of L shaped quartz pushrod;
Fig. 2 is through-hole structure synoptic diagram among Fig. 1;
Fig. 3 is the structural representation of L shaped quartz pushrod;
Fig. 4 is installment state, use state and the rotating state synoptic diagram of L shaped quartz pushrod;
Fig. 5 is the assembling synoptic diagram of T shape quartz pushrod;
Fig. 6 is the structural representation of T shape quartz pushrod;
Fig. 7 is use state and the retracted state synoptic diagram of T shape quartz pushrod.
Reference numeral: external flow guiding cylinder 1, inner draft tube 2, quartz pushrod 3.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments:
The present invention arranges through hole at the place, lower edge of inner draft tube or external flow guiding cylinder, quartz pushrod 3 of movable installation in the through hole, this quartz pushrod 3 can possess following two states with respect to the change in location of through hole: the lower end of (1) quartz pushrod is stretched out the lower edge of inner draft tube 2 or external flow guiding cylinder 1 vertically downward with the scale as measuring distance; Or the lower end of (2) quartz pushrod 3 is retracted on the lower edge of inner draft tube 2 or external flow guiding cylinder 1 so that the movement of thermal field of single crystal furnace device.
As specific embodiment, the invention provides two kinds of exemplary construction.
The wiring layout of first kind of structure is as shown in Figure 1:
This structure shown in Figure 1 comprises external flow guiding cylinder 1, inner draft tube 2 and quartz pushrod 3;
1) opens " one " font long through-hole at the sidewall of inner draft tube 2 lower edges, as shown in Figure 2;
2) quartz pushrod 3 is " L " shape, and as shown in Figure 3, its short end (canned paragraph) termination has the salient that is oppositely arranged up and down;
When 3) installing, quartz pushrod 3 is rotated to be horizontal direction, quartz pushrod 3 short ends (canned paragraph) are inserted inner draft tube 2 (shown in the left figure of Fig. 4), let go the back under action of gravity, the long end (measuring section) of quartz pushrod 3 is with sagging naturally, the lower edge (shown in the middle figure of Fig. 4) of external flow guiding cylinder 1 is stretched out in the lower end, and quartz pushrod 3 can not skid off from the through hole of inner draft tube 2 under this state;
When 4) needing dismounting or cleaning guide shell, with angle of quartz pushrod 3 rotations, quartz pushrod 3 lower ends are flushed, as shown in Figure 4 (shown in the right figure of Fig. 4) with external flow guiding cylinder 1 lower edge.This moment, external flow guiding cylinder 1 lower edge can be placed on the plane of sweeper, and quartz pushrod 3 can not skid off from the through hole of inner draft tube 2 yet under this state;
Second kind of structure wiring layout be as shown in Figure 5:
This structure shown in Figure 5 comprises external flow guiding cylinder 1, inner draft tube 2 and quartz pushrod 3;
1) drives a manhole at the lower surface of external flow guiding cylinder 1 lower edge;
2) quartz pushrod 3 is for being linear pattern, and its termination, top is T-shaped, is made up of two right cylinders, and quartz pushrod 3 diameters are slightly less than through-hole diameter, and the termination slightly larger in diameter of T shape is in the stopper of through-hole diameter to move down as quartz pushrod;
When 3) installing, quartz pushrod 3 is inserted from top to bottom in the through hole of external flow guiding cylinder 1, let go the back under action of gravity, quartz pushrod 3 is with natural downslide, and the lower edge (shown in the left figure of Fig. 7) of external flow guiding cylinder 1 is stretched out in the lower end; Because the T shape termination slightly larger in diameter of quartz pushrod 3 is in through-hole diameter, quartz pushrod 3 can not skid off from through hole under action of gravity;
When 4) needing dismounting or cleaning guide shell, external flow guiding cylinder 1 lower edge directly is placed on the plane of sweeper, quartz pushrod 3 will be pushed in the cavity of external flow guiding cylinder 1 and inner draft tube 2 formation naturally, and the lower end of quartz pushrod 3 flushes (shown in the right figure of Fig. 7) with external flow guiding cylinder 1 lower edge.
The present invention realizes that the principle of measuring distance is as follows:
When single crystal growing, quartz pushrod 3 stretches out the regular length l in guide shell lower edge, can rise by the operation crucible, the melted silicon face is promoted to gradually just contacts quartz pushrod 3, can determine that the spacing of melted silicon and guide shell lower edge is the length l that quartz pushrod 3 stretches out this moment, then on this basis, and level altitude h of operation crucible decline, at this moment, the interval S of melted silicon face and guide shell lower edge is:
S＝l+h；
Because vitreous silica is and the crucible identical materials, so even quartz pushrod 3 has of short duration the contact with melted silicon, also can not pollute molten silicon; The softening temperature of vitreous silica is about 1700 ℃, and the fusing point of silicon is 1420 ℃, so also can not soften in fusion silicon liquid level.
The linear expansivity of vitreous silica is minimum, be about 5.42E-7 at 1420 ℃ linear expansivitys, the length that quartz pushrod 3 stretches out guide shell is between the 15-20mm, and this length has produced 0.012-0.016mm owing to thermal expansion in the time of 1420 ℃ elongation can be ignored.So think identical when length that when high temperature vitreous silica rod 3 stretches out guide shell is with normal temperature.
Claims (1)
1. can measure the thermal field of single crystal furnace device of distance between fusion silicon liquid level and the guide shell, be provided for guiding inner draft tube and the external flow guiding cylinder of shielding gas in the hole in the middle of the following insulation cover of silicon monocrystalline furnace thermal field, inner draft tube joins respectively with the lower edge of external flow guiding cylinder with upper edge, the inner draft tube of external flow guiding cylinder and forms the closed edge that contacts; It is characterized in that the hole in the middle of the described down insulation cover is circular hole, the upper edge of described inner draft tube and external flow guiding cylinder, inner draft tube and the lower edge of external flow guiding cylinder join respectively form closure the edge that contacts be annular; Closely be connected ringwise between external flow guiding cylinder and the following insulation cover;
Place, lower edge at inner draft tube arranges through hole, L shaped quartz pushrod of movable installation in the through hole; Forming L shaped one section is canned paragraph, and another section is measuring section; Described through hole is opened on the sidewall of inner draft tube lower edge; The canned paragraph of quartz pushrod is movably installed in this through hole, and measuring section can be that horizontal axis of rotation is done 360 ° of rotations at perpendicular with this canned paragraph; Described through hole is " one " font long through-hole, and the termination that is movably installed in the quartz pushrod canned paragraph in the through hole has the salient that is oppositely arranged up and down; The existence of this salient makes the termination of canned paragraph can not skid off through hole when measuring section is vertical state, and can only could pass in and out from through hole when measuring section is the level of state;
This quartz pushrod can possess following two states with respect to the change in location of through hole: the lower end of (1) quartz pushrod is stretched out the lower edge of inner draft tube vertically downward with the scale as measuring distance; Or the lower end of (2) quartz pushrod is retracted on the lower edge of inner draft tube so that the movement of thermal field of single crystal furnace device.
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| CN103194792B (en) * | 2013-04-16 | 2016-02-03 | 江西豪安能源科技有限公司 | A kind of for the manufacture of the growth method of accurate single crystal seed with 9 inches of pulling of silicon single crystal |
| CN106435714A (en) * | 2015-08-07 | 2017-02-22 | 特变电工新疆新能源股份有限公司 | Polycrystalline silicon solution liquid level distance positioning method |
| CN113684532A (en) * | 2020-05-08 | 2021-11-23 | 西安奕斯伟材料科技有限公司 | Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace |
| CN112725884A (en) * | 2020-12-21 | 2021-04-30 | 江苏集芯半导体硅材料研究院有限公司 | Device and method for detecting liquid level distance of molten silicon in Czochralski single crystal growth process |
| CN112813492A (en) * | 2020-12-23 | 2021-05-18 | 上海新昇半导体科技有限公司 | Liquid level detection device for crystal growth and crystal growth device |
| CN114808115B (en) * | 2022-04-28 | 2023-08-15 | 晶科能源股份有限公司 | Liquid mouth distance measuring method and liquid mouth distance testing device |
| CN115434005B (en) * | 2022-08-23 | 2023-05-26 | 曲靖阳光新能源股份有限公司 | Straight-pull monocrystalline silicon crucible seam measuring tool and application method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN202202016U (en) * | 2011-07-07 | 2012-04-25 | 杭州慧翔电液技术开发有限公司 | Single crystal furnace thermal field device capable of measuring distance between liquid level of molten silicon and flow guide barrel |
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| JP5167651B2 (en) * | 2007-02-08 | 2013-03-21 | 信越半導体株式会社 | Method for measuring distance between heat shield member lower end surface and raw material melt surface, and method for controlling the distance |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN202202016U (en) * | 2011-07-07 | 2012-04-25 | 杭州慧翔电液技术开发有限公司 | Single crystal furnace thermal field device capable of measuring distance between liquid level of molten silicon and flow guide barrel |
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